TWI819137B - 用以減少粒子產生的氣體擴散器組件 - Google Patents
用以減少粒子產生的氣體擴散器組件 Download PDFInfo
- Publication number
- TWI819137B TWI819137B TW108140034A TW108140034A TWI819137B TW I819137 B TWI819137 B TW I819137B TW 108140034 A TW108140034 A TW 108140034A TW 108140034 A TW108140034 A TW 108140034A TW I819137 B TWI819137 B TW I819137B
- Authority
- TW
- Taiwan
- Prior art keywords
- diffuser assembly
- gas diffuser
- gas
- spokes
- fixed plate
- Prior art date
Links
- 239000002245 particle Substances 0.000 title description 12
- 230000001154 acute effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 description 33
- 210000002381 plasma Anatomy 0.000 description 30
- 238000009826 distribution Methods 0.000 description 25
- 238000004140 cleaning Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Jet Pumps And Other Pumps (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/201,755 | 2018-11-27 | ||
| US16/201,755 US10883174B2 (en) | 2018-11-27 | 2018-11-27 | Gas diffuser mounting plate for reduced particle generation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202037748A TW202037748A (zh) | 2020-10-16 |
| TWI819137B true TWI819137B (zh) | 2023-10-21 |
Family
ID=70770559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108140034A TWI819137B (zh) | 2018-11-27 | 2019-11-05 | 用以減少粒子產生的氣體擴散器組件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10883174B2 (ja) |
| JP (2) | JP7210730B2 (ja) |
| KR (2) | KR20210081449A (ja) |
| CN (2) | CN117431529A (ja) |
| TW (1) | TWI819137B (ja) |
| WO (1) | WO2020112282A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10927461B2 (en) * | 2018-08-31 | 2021-02-23 | Applied Materials, Inc. | Gas diffuser support structure for reduced particle generation |
| CN211972444U (zh) * | 2020-04-23 | 2020-11-20 | 京东方科技集团股份有限公司 | 一种导流器及等离子化学气相沉积设备 |
| WO2021237240A1 (en) * | 2020-05-20 | 2021-11-25 | Lam Research Corporation | Remote-plasma clean (rpc) directional-flow device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5643394A (en) * | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
| US20030010451A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US20050199184A1 (en) * | 2004-03-09 | 2005-09-15 | Applied Materials, Inc. | Gas distributor having directed gas flow and cleaning method |
| KR20120021679A (ko) * | 2010-08-12 | 2012-03-09 | (유)에스엔티 | 화학기상증착 장치 |
| US20120174866A1 (en) * | 2011-01-11 | 2012-07-12 | Snt. Co., Ltd. | Apparatus for chemical vapor deposition |
| US20130004691A1 (en) * | 2011-05-20 | 2013-01-03 | William Maxwell Allen | Molded articles of polymer-wax compositions |
| TWI523079B (zh) * | 2010-07-28 | 2016-02-21 | 應用材料股份有限公司 | 改善氣體流的噴頭支撐結構 |
| US9580804B2 (en) * | 2007-06-22 | 2017-02-28 | Applied Materials, Inc. | Diffuser support |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4893941A (en) * | 1987-07-06 | 1990-01-16 | Wayte Joseph M | Apparatus for mixing viscous liquid in a container |
| US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
| US5685281A (en) * | 1996-04-22 | 1997-11-11 | Li; Yuan | Gas vortex device for internal combustion engine |
| US5962822A (en) * | 1998-06-23 | 1999-10-05 | May; Daniel A. | Muffler/exhaust extractor and method |
| US6450117B1 (en) * | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
| US6797108B2 (en) * | 2001-10-05 | 2004-09-28 | Applied Materials, Inc. | Apparatus and method for evenly flowing processing gas onto a semiconductor wafer |
| US6461436B1 (en) | 2001-10-15 | 2002-10-08 | Micron Technology, Inc. | Apparatus and process of improving atomic layer deposition chamber performance |
| US6986814B2 (en) * | 2001-12-20 | 2006-01-17 | General Electric Company | Gas distributor for vapor coating method and container |
| KR100941959B1 (ko) | 2003-05-31 | 2010-02-11 | 주성엔지니어링(주) | 액정표시장치용 박막증착장치 |
| US20070241023A1 (en) * | 2004-08-30 | 2007-10-18 | Ryouichi Ootsubo | Deaeration Valve for Compression Bag and Compression Bag with Deaeration Valve |
| JP2006083408A (ja) * | 2004-09-14 | 2006-03-30 | Shin Meiwa Ind Co Ltd | 真空成膜装置 |
| KR100634451B1 (ko) * | 2005-01-10 | 2006-10-16 | 삼성전자주식회사 | 반도체 소자 제조 장치 |
| FI120847B (fi) * | 2005-06-23 | 2010-03-31 | Flaekt Woods Ab | Ilmanvaihtoventtiilin runko-osan ansas |
| US8535443B2 (en) | 2005-07-27 | 2013-09-17 | Applied Materials, Inc. | Gas line weldment design and process for CVD aluminum |
| CN101448977B (zh) * | 2005-11-04 | 2010-12-15 | 应用材料股份有限公司 | 用于等离子体增强的原子层沉积的设备和工艺 |
| JP4965875B2 (ja) * | 2006-03-14 | 2012-07-04 | 創光科学株式会社 | 化学的気相成長装置及びガス流路装置 |
| JP4885000B2 (ja) * | 2007-02-13 | 2012-02-29 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
| KR101029695B1 (ko) | 2008-12-01 | 2011-04-18 | 주식회사 테스 | 기판처리장치 |
| US8910644B2 (en) * | 2010-06-18 | 2014-12-16 | Applied Materials, Inc. | Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas |
| US20130004681A1 (en) | 2011-06-30 | 2013-01-03 | Applied Materials, Inc. | Mini blocker plate with standoff spacers |
| JP2013048227A (ja) * | 2011-07-25 | 2013-03-07 | Tokyo Electron Ltd | シャワーヘッド装置及び成膜装置 |
| US20140224176A1 (en) * | 2011-08-09 | 2014-08-14 | Samsung Electronics Co., Ltd. | Mocvd apparatus |
| DE102012003336A1 (de) * | 2012-02-17 | 2013-08-22 | Ziehl-Abegg Ag | Diffusor, Ventilator mit einem solchen Diffusor sowie Gerät mit solchen Ventilatoren |
| US9865437B2 (en) | 2014-12-30 | 2018-01-09 | Applied Materials, Inc. | High conductance process kit |
-
2018
- 2018-11-27 US US16/201,755 patent/US10883174B2/en active Active
-
2019
- 2019-10-24 CN CN202311209247.XA patent/CN117431529A/zh active Pending
- 2019-10-24 KR KR1020217019706A patent/KR20210081449A/ko not_active Application Discontinuation
- 2019-10-24 CN CN201980078392.4A patent/CN113166939B/zh active Active
- 2019-10-24 KR KR1020237035305A patent/KR20230155010A/ko not_active Application Discontinuation
- 2019-10-24 JP JP2021529289A patent/JP7210730B2/ja active Active
- 2019-10-24 WO PCT/US2019/057947 patent/WO2020112282A1/en active Application Filing
- 2019-11-05 TW TW108140034A patent/TWI819137B/zh active
-
2023
- 2023-01-11 JP JP2023002179A patent/JP2023055713A/ja active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5643394A (en) * | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
| US20030010451A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US20050199184A1 (en) * | 2004-03-09 | 2005-09-15 | Applied Materials, Inc. | Gas distributor having directed gas flow and cleaning method |
| US9580804B2 (en) * | 2007-06-22 | 2017-02-28 | Applied Materials, Inc. | Diffuser support |
| TWI523079B (zh) * | 2010-07-28 | 2016-02-21 | 應用材料股份有限公司 | 改善氣體流的噴頭支撐結構 |
| KR20120021679A (ko) * | 2010-08-12 | 2012-03-09 | (유)에스엔티 | 화학기상증착 장치 |
| US20120174866A1 (en) * | 2011-01-11 | 2012-07-12 | Snt. Co., Ltd. | Apparatus for chemical vapor deposition |
| US20130004691A1 (en) * | 2011-05-20 | 2013-01-03 | William Maxwell Allen | Molded articles of polymer-wax compositions |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022508209A (ja) | 2022-01-19 |
| CN113166939B (zh) | 2023-09-22 |
| JP7210730B2 (ja) | 2023-01-23 |
| KR20230155010A (ko) | 2023-11-09 |
| WO2020112282A1 (en) | 2020-06-04 |
| TW202037748A (zh) | 2020-10-16 |
| US20200165726A1 (en) | 2020-05-28 |
| JP2023055713A (ja) | 2023-04-18 |
| US10883174B2 (en) | 2021-01-05 |
| CN113166939A (zh) | 2021-07-23 |
| CN117431529A (zh) | 2024-01-23 |
| KR20210081449A (ko) | 2021-07-01 |
| TW202417678A (zh) | 2024-05-01 |
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