TWI816155B - 基板處理方法以及基板處理裝置 - Google Patents

基板處理方法以及基板處理裝置 Download PDF

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Publication number
TWI816155B
TWI816155B TW110126339A TW110126339A TWI816155B TW I816155 B TWI816155 B TW I816155B TW 110126339 A TW110126339 A TW 110126339A TW 110126339 A TW110126339 A TW 110126339A TW I816155 B TWI816155 B TW I816155B
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TW
Taiwan
Prior art keywords
substrate
polymer
liquid
etching
film
Prior art date
Application number
TW110126339A
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English (en)
Chinese (zh)
Other versions
TW202209472A (zh
Inventor
田原香奈
Original Assignee
日商斯庫林集團股份有限公司
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Publication of TW202209472A publication Critical patent/TW202209472A/zh
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Publication of TWI816155B publication Critical patent/TWI816155B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
TW110126339A 2020-07-27 2021-07-19 基板處理方法以及基板處理裝置 TWI816155B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020126869A JP2022023730A (ja) 2020-07-27 2020-07-27 基板処理方法および基板処理装置
JP2020-126869 2020-07-27

Publications (2)

Publication Number Publication Date
TW202209472A TW202209472A (zh) 2022-03-01
TWI816155B true TWI816155B (zh) 2023-09-21

Family

ID=80036210

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110126339A TWI816155B (zh) 2020-07-27 2021-07-19 基板處理方法以及基板處理裝置

Country Status (5)

Country Link
JP (1) JP2022023730A (ja)
KR (1) KR20230022233A (ja)
CN (1) CN116134587A (ja)
TW (1) TWI816155B (ja)
WO (1) WO2022024735A1 (ja)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI246521B (en) * 1999-03-19 2006-01-01 Nippon Kayaku Kk Urethane oligomer, a resin composition and a cured product thereof
CN1721986A (zh) * 2004-04-08 2006-01-18 三星电子株式会社 掩膜图案及其形成方法、涂料组合物的制备方法、和制造半导体器件的方法
CN1845795A (zh) * 2003-08-19 2006-10-11 纳诺普托公司 亚微米级构图方法和体系
TW200947555A (en) * 2008-02-01 2009-11-16 Newsouth Innovations Pty Ltd Method for patterned etching of selected material
TW200948827A (en) * 2008-04-15 2009-12-01 Samsung Electronics Co Ltd Photoresist resin, and method for forming pattern and method for manufacturing display panel using the same
US20130337649A1 (en) * 2012-06-18 2013-12-19 Shin-Etsu Chemical Co., Ltd. Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process
TW201715576A (zh) * 2015-07-31 2017-05-01 三星電子股份有限公司 半導體元件用內連線的形成方法
US20180181001A1 (en) * 2015-07-02 2018-06-28 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition comprising epoxy adduct having long-chain alkyl group

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100255626A1 (en) * 2007-12-20 2010-10-07 Teoss Co., Ltd. high viscosity etchant and a selective etching method for photovoltaic element substrates of solar cells using the same
US20100258142A1 (en) * 2009-04-14 2010-10-14 Mark Naoshi Kawaguchi Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate
JP5813495B2 (ja) 2011-04-15 2015-11-17 東京エレクトロン株式会社 液処理方法、液処理装置および記憶媒体
KR101682533B1 (ko) * 2015-05-11 2016-12-05 신한대학교 산학협력단 표시장치용 유리기판 표면 처리방법
WO2019058642A1 (ja) * 2017-09-22 2019-03-28 株式会社カネカ パターニングシートおよびエッチング構造物の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI246521B (en) * 1999-03-19 2006-01-01 Nippon Kayaku Kk Urethane oligomer, a resin composition and a cured product thereof
CN1845795A (zh) * 2003-08-19 2006-10-11 纳诺普托公司 亚微米级构图方法和体系
CN1721986A (zh) * 2004-04-08 2006-01-18 三星电子株式会社 掩膜图案及其形成方法、涂料组合物的制备方法、和制造半导体器件的方法
TW200947555A (en) * 2008-02-01 2009-11-16 Newsouth Innovations Pty Ltd Method for patterned etching of selected material
TW200948827A (en) * 2008-04-15 2009-12-01 Samsung Electronics Co Ltd Photoresist resin, and method for forming pattern and method for manufacturing display panel using the same
US20130337649A1 (en) * 2012-06-18 2013-12-19 Shin-Etsu Chemical Co., Ltd. Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process
US20160027653A1 (en) * 2012-06-18 2016-01-28 Shin-Etsu Chemical Co., Ltd. Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process
US20180181001A1 (en) * 2015-07-02 2018-06-28 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition comprising epoxy adduct having long-chain alkyl group
TW201715576A (zh) * 2015-07-31 2017-05-01 三星電子股份有限公司 半導體元件用內連線的形成方法

Also Published As

Publication number Publication date
TW202209472A (zh) 2022-03-01
CN116134587A (zh) 2023-05-16
WO2022024735A1 (ja) 2022-02-03
JP2022023730A (ja) 2022-02-08
KR20230022233A (ko) 2023-02-14

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