TWI815055B - Exposure apparatus, manufacturing method of flat panel display, device manufacturing method and projection optical modules - Google Patents

Exposure apparatus, manufacturing method of flat panel display, device manufacturing method and projection optical modules Download PDF

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TWI815055B
TWI815055B TW109138062A TW109138062A TWI815055B TW I815055 B TWI815055 B TW I815055B TW 109138062 A TW109138062 A TW 109138062A TW 109138062 A TW109138062 A TW 109138062A TW I815055 B TWI815055 B TW I815055B
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light
light shielding
exposure
substrate
area
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TW109138062A
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Chinese (zh)
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TW202115508A (en
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青木淳行
水橋謙介
中村貴
西川仁
金子宏和
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日商尼康股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Abstract

本發明之課題在於提高利用接合曝光製造製品時之設計之自由度。 An object of the present invention is to improve the degree of design freedom when manufacturing products using bonding exposure.

具備將遮罩M之圖案投影至基板P之複數個投影光學單元,且使遮罩M與基板P沿X方向相對移動而將遮罩M之圖案曝光至基板P之曝光方法包括:第1曝光步驟,其於以第1傾斜角度對藉由投影光學單元投影至基板P上之投影區域之-Y側之端部進行遮光之狀態下,將圖案A投影至基板P上之A區域;步進移動步驟,其使基板P移動;及第2曝光步驟,其於以第2傾斜角度對投影區域之+Y側之端部進行遮光之狀態下,將圖案B投影至至少一部分與A區域重合之B區域。 The exposure method includes a plurality of projection optical units that project the pattern of the mask M onto the substrate P, and moves the mask M and the substrate P relatively along the X direction to expose the pattern of the mask M to the substrate P, including: first exposure A step of projecting the pattern A onto the A area on the substrate P in a state where the end of the -Y side of the projection area projected onto the substrate P by the projection optical unit is shielded at a first tilt angle; step a moving step, which moves the substrate P; and a second exposure step, which projects the pattern B to at least partially overlap the area A while shielding the end of the +Y side of the projection area at a second tilt angle. Area B.

Description

曝光裝置、平板顯示器之製造方法、元件製造方法以及投影光學模組 Exposure device, flat panel display manufacturing method, component manufacturing method and projection optical module

本發明係關於一種曝光方法、平板顯示器之製造方法、元件製造方法、遮光裝置、及曝光裝置,進而詳細而言,係關於一種將經由複數個投影光學系統形成於物體上之圖案彼此接合之曝光方法、使用上述曝光方法之平板顯示器或元件之製造方法。 The present invention relates to an exposure method, a flat panel display manufacturing method, an element manufacturing method, a light shielding device, and an exposure device. More specifically, the present invention relates to an exposure method that joins patterns formed on an object through a plurality of projection optical systems. Method, manufacturing method of flat panel display or device using the above exposure method.

習知,於製造液晶顯示元件(液晶面板)、半導體元件等電子元件(微型元件)之微影步驟中,使用使遮罩或光罩(以下統稱為「遮罩」)與玻璃板或晶圓等(以下統稱為「基板」)沿既定之掃描方向同步移動,並且使用能量束將形成於遮罩之圖案轉印至基板上之步進掃描方式之曝光裝置(所謂之掃描步進式曝光機(亦稱為掃描儀))等。 It is known that in the lithography step of manufacturing electronic components (micro components) such as liquid crystal display components (LCD panels) and semiconductor components, a mask or photomask (hereinafter collectively referred to as "mask") and a glass plate or wafer are used. (hereinafter collectively referred to as "substrate") is a step-scan exposure device that moves synchronously along a predetermined scanning direction and uses an energy beam to transfer the pattern formed on the mask to the substrate (so-called scanning stepper exposure machine (also known as scanner)) etc.

作為使用此種曝光裝置於基板上形成圖案之方法,已知有利用形成於遮罩之圖案(遮罩圖案)之週期性,將遮罩圖案於基板上接合之所謂之接合曝光(參照專利文獻1)。 As a method of forming a pattern on a substrate using such an exposure device, so-called bonding exposure is known, in which the mask pattern is bonded to the substrate by utilizing the periodicity of the pattern (mask pattern) formed on the mask (see patent document 1).

於利用習知之曝光裝置進行上述接合曝光之情形時,上述接合之自由度並不充分。 When the above-mentioned joint exposure is performed using a conventional exposure device, the degree of freedom of the above-mentioned joint is not sufficient.

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Document]

[專利文獻1]日本專利特開2004-335864號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-335864

於第1實施形態中,提供一種曝光裝置,其係相對於將既定圖案投影至物體之投影光學系統,使上述物體沿第1方向相對移動並進行曝光之曝光裝置,並且具備:遮光部,其對經由上述投影光學系統投影至上述物體上之投影區域中,根據上述第1方向之位置而上述物體上之照明量沿與上述第1方向交叉之上述第2方向變化之既定區域進行遮光;及驅動部,其以使上述照明量變化之方式驅動上述遮光部。 In a first embodiment, there is provided an exposure device that exposes an object by relatively moving the object in a first direction with respect to a projection optical system that projects a predetermined pattern to an object, and is provided with a light shielding portion, In the projection area projected onto the object via the projection optical system, a predetermined area in which the amount of illumination on the object changes along the second direction intersecting the first direction according to the position in the first direction is shielded from light; and A driving unit drives the light shielding unit to change the amount of illumination.

於第2實施形態中,提供一種平板顯示器之製造方法,其包括:使用第1實施形態中之曝光裝置對上述基板進行曝光;及使經曝光之上述基板顯影。 In a second embodiment, a method for manufacturing a flat panel display is provided, which includes: exposing the above-mentioned substrate using the exposure device in the first embodiment; and developing the exposed above-mentioned substrate.

於第3實施形態中,提供一種元件製造方法,其包括:使用第1實施形態中之曝光裝置對上述基板進行曝光;及使經曝光之上述基板顯影。 In a third embodiment, a device manufacturing method is provided, which includes: exposing the above-mentioned substrate using the exposure device in the first embodiment; and developing the exposed above-mentioned substrate.

於第4態樣之實施形態中,提供一種遮光裝置,其係用於相對於將既定圖案投影至物體之投影光學系統,使上述物體沿第1方向相對移動並進行掃描曝光之曝光裝置之遮光裝置,並且具備:遮光部,其對經由上述投影光學系統投影至上述物體上之投影區域中,根據上述第1方向之位置而上述物體上之照明量沿與上述第1方向交叉之上述第2方向變化之既定區域進行遮光;及驅動部,其以使上述照明量變化之方式驅動上述遮光部。 In an embodiment of the fourth aspect, there is provided a light shielding device for an exposure device that performs scanning exposure by relatively moving the object in a first direction with respect to a projection optical system that projects a predetermined pattern onto an object. The device further includes: a light shielding portion that controls the amount of illumination on the object in the projection area projected onto the object via the projection optical system along the second direction that intersects with the first direction based on the position in the first direction. The light is shielded in a predetermined area where the direction changes; and a driving part drives the light shielding part in a manner to change the illumination amount.

於第5態樣之實施形態中,提供一種曝光方法,其係相對於將既定圖案投影至物體之投影光學系統,使上述物體沿第1方向相對移動並進行掃描 曝光之曝光方法,並且包括:藉由遮光部對經由上述投影光學系統投影至上述物體上之投影區域中,根據上述第1方向之位置而上述物體上之照明量沿與上述第1方向交叉之上述第2方向變化之既定區域進行遮光;及以使上述照明量變化之方式驅動上述遮光部。 In an embodiment of the fifth aspect, there is provided an exposure method in which the object is scanned by relatively moving it in a first direction with respect to a projection optical system that projects a predetermined pattern onto the object. The exposure method of exposure further includes: using a light-shielding portion to project onto the object through the projection optical system in a projection area, according to the position in the first direction, the illumination amount on the object is along a direction that intersects with the first direction. The predetermined area where the second direction changes is light-shielded; and the light-shielding portion is driven to change the illumination amount.

於第6態樣之實施形態中,提供一種平板顯示器之製造方法,其包括:使用第5態樣之實施形態中之曝光方法對上述基板進行曝光;及使經曝光之上述基板顯影。 In an embodiment of the sixth aspect, a method for manufacturing a flat panel display is provided, which includes: exposing the substrate using the exposure method of the embodiment of the fifth aspect; and developing the exposed substrate.

於第7態樣之實施形態中,提供一種元件製造方法,其包括:使用第5態樣之實施形態中之曝光方法對上述基板進行曝光;及使經曝光之上述基板顯影。 In an embodiment of the seventh aspect, a device manufacturing method is provided, which includes: exposing the substrate using the exposure method of the embodiment of the fifth aspect; and developing the exposed substrate.

20:視場光闌 20:Field diaphragm

30:遮光板 30: Shade

50:投影區域 50: Projection area

60:擋板裝置 60:Baffle device

80:驅動機構 80:Driving mechanism

CONT:控制裝置 CONT: control device

EX:曝光裝置 EX: Exposure device

A:區域 A:Region

B:區域 B:Area

M:遮罩 M: mask

MST:遮罩載置台 MST: Mask stage

K:開口 K:Open your mouth

P:基板 P:Substrate

PLa~PLg:投影光學模組 PLa~PLg: Projection optical module

PN1:面板 PN1:Panel

PN2:面板 PN2:Panel

PST:基板載置台 PST: Substrate mounting table

[圖1]係概略性地表示一實施形態之曝光裝置之構成之圖。 [Fig. 1] is a diagram schematically showing the structure of an exposure device according to an embodiment.

[圖2]係用以說明圖1之曝光裝置所具有之照明光學系統、及投影光學系統之構造之圖。 [Fig. 2] A diagram for explaining the structure of the illumination optical system and the projection optical system included in the exposure device of Fig. 1. [Fig.

[圖3(a)]係表示投影光學系統所具有之視場光闌與遮光板之配置之俯視圖,[圖3(b)]係表示視場光闌與遮光板之光軸方向之位置關係之圖。 [Fig. 3(a)] is a top view showing the arrangement of the field diaphragm and the light shielding plate of the projection optical system. [Fig. 3(b)] shows the positional relationship between the field diaphragm and the light shielding plate in the optical axis direction. picture.

[圖4(a)]係表示遮光板之第1傾斜配置之圖,[圖4(b)]係表示遮光板之第2傾斜配置之圖。 [Fig. 4(a)] is a diagram showing the first oblique arrangement of the light shielding plate, and [Fig. 4(b)] is a diagram showing the second oblique arrangement of the light shielding plate.

[圖5(a)]係表示使用遮光板於投影區域之中央形成連接部之情形時之圖,[圖5(b)]係表示使用遮光板於投影區域之端部附近形成連接部之情形時之圖。 [Fig. 5(a)] is a diagram showing a case where a light shielding plate is used to form a connection part in the center of the projection area, and [Fig. 5(b)] is a diagram showing a case where a light shielding plate is used to form a connection part near the end of the projection area. Picture of time.

[圖6(a)]係表示使用2片遮光板形成連接部之情形時之圖,[圖6(b)]係表示利用1片遮光板形成與圖6(a)相同之連接部之情形時之圖。 [Fig. 6(a)] shows a case where two light shielding plates are used to form a connection part, and [Fig. 6(b)] shows a case where one light shielding plate is used to form the same connection part as in Fig. 6(a) Picture of time.

[圖7(a)]係表示習知之遮光板之圖,[圖7(b)]係表示實施形態之遮光板 之圖,[圖7(c)]係表示具備多片實施形態之遮光板之情形時之圖。 [Fig. 7(a)] is a diagram showing a conventional light shielding plate, and [Fig. 7(b)] is a diagram showing a light shielding plate according to an embodiment. The diagram [Fig. 7(c)] is a diagram showing a case where a plurality of light shielding plates according to the embodiment are provided.

[圖8(a)~圖8(d)]係用以說明藉由視場光闌與遮光板而形成之開口之態樣(第1模式~第4模式)之圖。 [Fig. 8(a)~Fig. 8(d)] are diagrams for explaining the appearance of the opening formed by the field diaphragm and the light shielding plate (first mode to fourth mode).

[圖9]係表示產生於基板上之投影區域之俯視圖。 [Fig. 9] is a top view showing the projection area produced on the substrate.

[圖10]係表示接合曝光之概念圖。 [Fig. 10] is a conceptual diagram showing joint exposure.

[圖11(a)]係表示第1曝光方法之基板與遮罩之關係之圖,[圖11(b)]係表示利用第1曝光方法對A區域進行掃描曝光時之圖,[圖11(c)]係表示利用第1曝光方法對B區域進行掃描曝光時之圖。 [Fig. 11(a)] is a diagram showing the relationship between the substrate and the mask in the first exposure method. [Fig. 11(b)] is a diagram showing the scanning exposure of area A using the first exposure method. [Fig. 11 (c)] is a diagram showing the scanning exposure of area B using the first exposure method.

[圖12(a)]係表示第2曝光方法之基板與遮罩之關係之圖,[圖12(b)]係表示利用第2曝光方法對A區域進行掃描曝光時之圖,[圖12(c)]係表示利用第2曝光方法對B區域進行掃描曝光時之圖。 [Fig. 12(a)] is a diagram showing the relationship between the substrate and the mask in the second exposure method. [Fig. 12(b)] is a diagram showing the scanning exposure of area A using the second exposure method. [Fig. 12 (c)] is a diagram showing the scanning exposure of area B using the second exposure method.

[圖13(a)]係表示第3曝光方法之基板與遮罩之關係之圖,[圖13(b)]係表示利用第3曝光方法對A區域進行掃描曝光時之圖。 [Fig. 13(a)] is a diagram showing the relationship between the substrate and the mask in the third exposure method, and [Fig. 13(b)] is a diagram showing the scanning exposure of area A using the third exposure method.

[圖14(a)]係表示利用第3曝光方法對B區域進行掃描曝光時之圖,[圖14(b)]係表示利用第3曝光方法對C區域進行掃描曝光時之圖。 [Fig. 14(a)] is a diagram showing the scanning exposure of area B using the third exposure method, and [Fig. 14(b)] is a diagram showing the scanning exposure of area C using the third exposure method.

[圖15(a)]係表示第4曝光方法之基板與遮罩之關係之圖,[圖15(b)]係表示利用第4曝光方法對A區域進行掃描曝光時之圖。 [Fig. 15(a)] is a diagram showing the relationship between the substrate and the mask in the fourth exposure method, and [Fig. 15(b)] is a diagram showing the scanning exposure of area A using the fourth exposure method.

[圖16]係表示利用第4曝光方法對B區域進行掃描曝光時之圖。 [Fig. 16] is a diagram showing the scanning exposure of area B using the fourth exposure method.

[圖17(a)]係表示第5曝光方法之基板與遮罩之關係之圖,[圖17(b)]係表示利用第5曝光方法對A1區域進行掃描曝光時之圖。 [Fig. 17(a)] is a diagram showing the relationship between the substrate and the mask in the fifth exposure method, and [Fig. 17(b)] is a diagram showing the scanning exposure of the A1 area using the fifth exposure method.

[圖18(a)]係表示利用第5曝光方法對B1區域進行掃描曝光時之圖,[圖18(b)]係表示利用第5曝光方法對A2區域進行掃描曝光時之圖。 [Fig. 18(a)] is a diagram showing the scanning exposure of the B1 area using the fifth exposure method, and [Fig. 18(b)] is a diagram showing the scanning exposure of the A2 area using the fifth exposure method.

[圖19]係表示利用第5曝光方法對B2區域進行掃描曝光時之圖。 [Fig. 19] is a diagram showing the scanning exposure of the B2 area using the fifth exposure method.

[圖20]係表示進行接合曝光時之流程圖。 [Fig. 20] is a flowchart showing the execution of joint exposure.

[圖21]係表示遮光板之驅動機構之變形例(其1)之圖。 [Fig. 21] A diagram showing a modified example (Part 1) of the driving mechanism of the light shielding plate.

[圖22]係表示遮光板之驅動機構之變形例(其2)之圖。 [Fig. 22] A diagram showing a modification (Part 2) of the driving mechanism of the light shielding plate.

[圖23(a)及圖23(b)]係表示遮光板之驅動機構之變形例(其3)之圖(其1及其2)。 [Fig. 23 (a) and Fig. 23 (b)] are diagrams (Parts 1 and 2) showing modifications (Part 3) of the driving mechanism of the light shielding plate.

[圖24(a)]係表示遮光板之變形例之圖,[圖24(b)~圖24(e)]係表示圖24(a)之遮光板之動作之圖(其1~其4)。 [Fig. 24(a)] is a diagram showing a modified example of the light shielding plate. [Fig. 24(b)~Fig. 24(e)] is a diagram showing the operation of the light shielding plate in Fig. 24(a) (parts 1 to 4). ).

[圖25]係表示遮光板之驅動機構之詳細內容之圖。 [Fig. 25] is a diagram showing the details of the driving mechanism of the light shielding plate.

[圖26]係用以說明使用光學濾波器之接合曝光之圖。 [Fig. 26] is a diagram illustrating joint exposure using an optical filter.

以下,關於一實施形態,使用圖1~圖20進行說明。圖1係表示一實施形態之曝光裝置EX之構成之立體圖。於圖1中,曝光裝置EX具備:遮罩載置台MST,其支持遮罩M;基板載置台PST,其支持感光基板P(以下,簡稱為「基板P」);照明光學系統IL,其利用曝光光EL對遮罩M進行照明;投影光學系統PL,其將形成於遮罩M之圖案之投影像(以下,稱為圖案影像)轉印至基板P,並將作為與該圖案影像對應之潛像之轉印圖案形成於基板P上;及控制裝置CONT(於圖1中未圖示,參照圖2),其總括地控制曝光裝置EX之動作。基板P係將感光劑(光阻)塗佈於玻璃基板而成者,轉印圖案形成於該感光劑中。投影光學系統PL係由並列設置之複數個(於圖1中為7個)投影光學模組PLa~PLg構成,本實施形態中之曝光裝置EX相對於該投影光學系統PL,使遮罩M與基板P同步移動(同步掃描),並且利用曝光光EL對遮罩M進行照明,而將遮罩M之圖案影像轉印至基板P。 Hereinafter, an embodiment will be described using FIGS. 1 to 20 . FIG. 1 is a perspective view showing the structure of an exposure device EX according to an embodiment. In FIG. 1 , the exposure device EX includes: a mask mounting table MST that supports the mask M; a substrate mounting table PST that supports a photosensitive substrate P (hereinafter referred to as "substrate P"); and an illumination optical system IL that utilizes The exposure light EL illuminates the mask M; the projection optical system PL transfers the projected image of the pattern formed on the mask M (hereinafter referred to as the pattern image) to the substrate P, and uses it as a projection image corresponding to the pattern image. The transfer pattern of the latent image is formed on the substrate P; and the control device CONT (not shown in Figure 1, refer to Figure 2), which collectively controls the operation of the exposure device EX. The substrate P is a glass substrate coated with a photosensitive agent (photoresist), and the transfer pattern is formed in the photosensitive agent. The projection optical system PL is composed of a plurality of (seven in Figure 1) projection optical modules PLa~PLg arranged in parallel. The exposure device EX in this embodiment causes the mask M and The substrate P moves synchronously (synchronous scanning), and the mask M is illuminated by the exposure light EL, and the pattern image of the mask M is transferred to the substrate P.

此處,於以下之說明中,將遮罩M與基板P之同步移動方向(掃描方向)設為X軸方向,將於水平面內與掃描方向正交之方向設為Y軸方向(非 掃描方向),將與X軸方向及Y軸方向正交之方向設為Z軸方向。又,將繞X軸、Y軸、及Z軸之軸線之方向分別設為θX、θY、及θZ方向。 Here, in the following description, the synchronous movement direction (scanning direction) of the mask M and the substrate P is set as the X-axis direction, and the direction orthogonal to the scanning direction in the horizontal plane is set as the Y-axis direction (not the scanning direction). Scanning direction), set the direction orthogonal to the X-axis direction and the Y-axis direction as the Z-axis direction. In addition, let the directions of the axes around the X-axis, Y-axis, and Z-axis be θX, θY, and θZ directions respectively.

本實施形態之遮罩載置台裝置具備:遮罩載置台MST,其支持遮罩M;線性導軌(未圖示),其具有於X軸方向上較長之行程;及由線性馬達、音圈馬達(VCM)等構成之遮罩載置台驅動部MSTD。遮罩載置台驅動部MSTD於在控制裝置CONT(參照圖2)之控制下使遮罩M與基板P同步移動時,能以於X軸方向上較長之行程驅動具有遮罩M之遮罩載置台MST,並且為了對包含X軸方向及Y軸方向之水平面內之遮罩M之位置進行微調整,能夠將遮罩載置台MST沿X軸方向、Y軸方向、Z軸方向及θZ方向驅動。又,遮罩載置台MST之水平面內之位置係使用雷射干擾計進行測定,例如平時係利用0.5~1nm左右之分解能力被檢測出。該雷射干擾計之測量值被傳輸至控制裝置CONT,以控制遮罩載置台MST之X軸方向、Y軸方向、Z軸方向及θZ方向之位置。 The mask stage device of this embodiment includes: a mask stage MST that supports the mask M; a linear guide (not shown) that has a long stroke in the X-axis direction; and a linear motor and a voice coil. The mask mounting table drive unit MSTD is composed of a motor (VCM), etc. The mask stage driving unit MSTD can drive the mask having the mask M with a long stroke in the X-axis direction when the mask M and the substrate P are moved synchronously under the control of the control device CONT (see Figure 2). Mounting table MST, and in order to finely adjust the position of the mask M in the horizontal plane including the X-axis direction and the Y-axis direction, the mask mounting table MST can be moved in the X-axis direction, the Y-axis direction, the Z-axis direction and the θZ direction. drive. In addition, the position of the mask mounting table MST in the horizontal plane is measured using a laser interference meter. For example, it is usually detected using a resolution capability of about 0.5 to 1 nm. The measurement value of the laser interference meter is transmitted to the control device CONT to control the positions of the mask mounting table MST in the X-axis direction, the Y-axis direction, the Z-axis direction and the θZ direction.

透過遮罩M之曝光光EL分別入射至投影光學模組PLa~PLg。投影光學模組PLa~PLg支持於定盤150,並使與藉由曝光光EL而形成之遮罩M上之照射區域對應之圖案影像於基板P成像。投影光學模組PLa、PLc、PLe、PLg與投影光學模組PLb、PLd、PLf分別於Y軸方向上以既定間隔配置。又,投影光學模組PLa、PLc、PLe、PLg之行與投影光學模組PLb、PLd、PLf之行於X軸方向上隔開配置,整體上沿Y軸方向配置成錯位狀。投影光學模組PLa~PLg分別具有複數個光學元件(透鏡等)。透過各投影光學模組PLa~PLg之曝光光EL使與遮罩M上之照射區域對應之圖案影像成像於基板P上之不同之各個投影區域50a~50g。 The exposure light EL passing through the mask M is incident on the projection optical modules PLa~PLg respectively. The projection optical modules PLa~PLg are supported on the fixed plate 150, and image the pattern image corresponding to the illumination area on the mask M formed by the exposure light EL on the substrate P. The projection optical modules PLa, PLc, PLe, and PLg and the projection optical modules PLb, PLd, and PLf are respectively arranged at predetermined intervals in the Y-axis direction. In addition, the rows of projection optical modules PLa, PLc, PLe, and PLg are spaced apart from the rows of projection optical modules PLb, PLd, and PLf in the X-axis direction, and are arranged in a staggered manner in the Y-axis direction as a whole. The projection optical modules PLa~PLg each have a plurality of optical elements (lenses, etc.). The exposure light EL passing through each projection optical module PLa~PLg causes the pattern image corresponding to the illumination area on the mask M to be imaged on the different projection areas 50a~50g on the substrate P.

基板載置台PST具有基板保持器PH,經由該基板保持器PH保持基板P。基板載置台PST與遮罩載置台MST同樣地,可沿X軸方向、Y軸方向及Z軸方向移動,進而,亦可沿θX、θY、及θZ方向移動。基板載置台PST係於控制 裝置CONT(參照圖2)之控制下,由藉由線性馬達等構成之基板載置台驅動部PSTD驅動。 The substrate mounting table PST has a substrate holder PH, and the substrate P is held via the substrate holder PH. The substrate mounting table PST, like the mask mounting table MST, is movable in the X-axis direction, the Y-axis direction, and the Z-axis direction, and is also movable in the θX, θY, and θZ directions. The substrate mounting table PST is controlled by Under the control of the device CONT (see FIG. 2 ), it is driven by the substrate mounting table driving unit PSTD composed of a linear motor or the like.

又,於-X側之投影光學模組PLa、PLc、PLe、PLg之行與+X側之投影光學模組PLb、PLd、PLf之行之間配置有檢測遮罩M之圖案面及基板P之曝光面之Z軸方向上之位置之焦點檢測系統110。焦點檢測系統110構成為配置有複數個斜入射方式之焦點檢測系統。焦點檢測系統110之檢測結果被輸出至控制裝置CONT(參照圖2),控制裝置CONT基於焦點檢測系統110之檢測結果,以遮罩M之圖案面與基板P之曝光面形成既定之間隔及平行度之方式進行控制。 Furthermore, the pattern surface of the detection mask M and the substrate P are arranged between the rows of the projection optical modules PLa, PLc, PLe, and PLg on the -X side and the rows of the projection optical modules PLb, PLd, and PLf on the +X side. The focus detection system 110 determines the position of the exposure surface in the Z-axis direction. The focus detection system 110 is configured as a focus detection system equipped with a plurality of oblique incidence modes. The detection results of the focus detection system 110 are output to the control device CONT (refer to FIG. 2). The control device CONT forms a predetermined distance and parallelism between the pattern surface of the mask M and the exposure surface of the substrate P based on the detection results of the focus detection system 110. degree of control.

控制裝置CONT與記憶部120(分別參照圖2)連接,並基於記憶於記憶部120之配方資訊等,一面監測遮罩載置台MST及基板載置台PST之位置,一面控制基板載置台驅動部PSTD及遮罩載置台驅動部MSTD,藉此使遮罩M與基板P沿X軸方向同步移動。 The control device CONT is connected to the memory unit 120 (refer to FIG. 2 respectively), and based on the recipe information stored in the memory unit 120, it monitors the positions of the mask stage MST and the substrate stage PST while controlling the substrate stage driving unit PSTD. and the mask stage driving unit MSTD, thereby causing the mask M and the substrate P to move synchronously in the X-axis direction.

圖2係表示照明光學系統IL及投影光學系統PL之構成之圖。如圖2所示,照明光學系統IL具備:光源1,其係由超高壓水銀燈等構成;橢圓鏡1a,其使自光源1射出之光聚光;分色鏡2,其使藉由該橢圓鏡1a而聚光之光中之曝光所需之波長之光反射,並使其他波長之光透過;波長選擇濾波器3,其使由分色鏡2反射之光中之僅包含進一步曝光所需之波長(通常為g、h、i射線中之至少1個頻帶)之光作為曝光光通過;及導光件4,其將來自波長選擇濾波器3之曝光光分支成多條(於本實施形態中為7條),並使之經由反射鏡5入射至各照明系統模組IMa~IMg。此處,作為構成照明光學系統IL之照明系統模組IM,於本實施形態中,與7個投影光學模組PLa~PLg對應地設置有7個照明系統模組IMa~IMg。但是,於圖2中,為便於說明,僅示出與投影光學模組PLf對應之照明系統模組IMf。各個照明系統模組IMa~IMg於X軸方向與Y軸方向上具有既定之間隔,且係與各個投影光學模組PLa~PLg對應地配置。並且,自各個照明系統模 組IMa~IMg射出之曝光光EL與投影光學模組PLa~PLg對應地分別對遮罩M上之不同照射區域進行照明。 FIG. 2 is a diagram showing the configuration of the illumination optical system IL and the projection optical system PL. As shown in FIG. 2, the illumination optical system IL includes: a light source 1, which is composed of an ultrahigh-pressure mercury lamp, etc.; an elliptical mirror 1a, which condenses the light emitted from the light source 1; and a dichroic mirror 2, which condenses the light emitted from the light source 1 through the ellipse. The mirror 1a reflects the light of the wavelength required for exposure in the condensed light and transmits the light of other wavelengths; the wavelength selective filter 3 makes the light reflected by the dichroic mirror 2 only contain the light required for further exposure. Light of a wavelength (usually at least one frequency band among g, h, and i rays) passes as exposure light; and a light guide 4 branches the exposure light from the wavelength selective filter 3 into multiple strips (in this embodiment 7 in the form), and make them incident to each lighting system module IMa~IMg through the reflector 5. Here, as the lighting system module IM constituting the lighting optical system IL, in this embodiment, seven lighting system modules IMa to IMg are provided corresponding to the seven projection optical modules PLa to PLg. However, in FIG. 2 , for convenience of explanation, only the lighting system module IMf corresponding to the projection optical module PLf is shown. Each lighting system module IMa~IMg has a predetermined interval in the X-axis direction and the Y-axis direction, and is arranged corresponding to each projection optical module PLa~PLg. Moreover, from each lighting system model The exposure light EL emitted by the groups IMa~IMg and the projection optical modules PLa~PLg illuminate different illumination areas on the mask M correspondingly.

各個照明系統模組IMa~IMg具備照明快門6、中繼透鏡7、作為光學積分器之複眼透鏡8、及聚光透鏡9。照明快門6相對於光路插脫自如地配置於導光件4之光路下游側。照明快門6於配置於光路內時對曝光光進行遮光,於自光路退避時將該遮光解除。於照明快門6連接有快門驅動部6a。快門驅動部6a係由控制裝置CONT控制。 Each illumination system module IMa~IMg is equipped with an illumination shutter 6, a relay lens 7, a fly-eye lens 8 as an optical integrator, and a condenser lens 9. The illumination shutter 6 is disposed on the downstream side of the optical path of the light guide 4 so as to be detachably inserted into the optical path. The illumination shutter 6 blocks the exposure light when it is arranged in the light path, and releases the light blocking when it retreats from the light path. The lighting shutter 6 is connected to a shutter driving unit 6a. The shutter driving section 6a is controlled by the control device CONT.

又,各個照明系統模組IMa~IMg具有光量調整機構10。光量調整機構10係藉由針對各光路設定曝光光之照度而調整曝光量者,並且具備半反射鏡11、檢測器12、濾波器13、及濾波器驅動部14。半反射鏡11配置於濾波器13與中繼透鏡7之間之光路中,並使透過濾波器13之曝光光之一部分入射至檢測器12。檢測器12獨立地檢測所入射之曝光光之照度,並將檢測出之照度信號輸出至控制裝置CONT。濾波器13係以透過率沿X軸方向於既定範圍內線形地逐漸變化之方式形成,且配置於各光路中之照明快門6與半反射鏡11之間。濾波器驅動部14基於控制裝置CONT之指示使濾波器13沿X軸方向移動,藉此針對各光路調整曝光量。 In addition, each of the lighting system modules IMa to IMg has a light amount adjustment mechanism 10 . The light amount adjustment mechanism 10 adjusts the exposure amount by setting the illuminance of the exposure light for each optical path, and includes a half mirror 11 , a detector 12 , a filter 13 , and a filter drive unit 14 . The half mirror 11 is disposed in the optical path between the filter 13 and the relay lens 7 , and allows a part of the exposure light that passes through the filter 13 to enter the detector 12 . The detector 12 independently detects the illumination of the incident exposure light, and outputs the detected illumination signal to the control device CONT. The filter 13 is formed in such a manner that the transmittance linearly and gradually changes within a predetermined range along the X-axis direction, and is arranged between the illumination shutter 6 and the half mirror 11 in each optical path. The filter driving unit 14 moves the filter 13 in the X-axis direction based on instructions from the control device CONT, thereby adjusting the exposure amount for each optical path.

透過光量調整機構10之光束經由中繼透鏡7到達至複眼透鏡8。複眼透鏡8於射出面側形成二次光源,來自該二次光源之曝光光EL於通過聚光透鏡9,並通過具備直角稜鏡16、透鏡系統17、及凹面鏡18之反射折射型光學系統15後,均勻地對遮罩M上之照射區域進行照明。再者,亦可省略反射折射型光學系統15。即,亦可將通過聚光透鏡9之光束直接照射至遮罩M。藉此,可使照明光學系統IL、進而曝光裝置EX小型化。 The light beam passing through the light amount adjustment mechanism 10 reaches the fly-eye lens 8 via the relay lens 7 . The fly-eye lens 8 forms a secondary light source on the exit surface side, and the exposure light EL from the secondary light source passes through the condenser lens 9 and passes through the catadioptric optical system 15 including the right-angle lens 16, the lens system 17, and the concave mirror 18. Then, the illumination area on the mask M is evenly illuminated. Furthermore, the catadioptric optical system 15 may be omitted. That is, the light beam passing through the condenser lens 9 may be directly irradiated to the mask M. Thereby, the illumination optical system IL and further the exposure device EX can be miniaturized.

各個投影光學模組PLa~PLg具備像位移機構19、焦點位置調整機構31、2組反射折射型光學系統21、22、視場光闌20、及倍率調整機構23。像 位移機構19藉由使2片平行平面板玻璃分別沿θY方向或者θX方向旋轉,而使遮罩M之圖案影像沿X軸方向或者Y軸方向位移。又,焦點位置調整機構31具備1對楔狀稜鏡,藉由使光路中之楔狀稜鏡之厚度之總和變化而使圖案影像之像面位置變化,藉由使至少一個楔狀稜鏡繞光軸旋轉而使圖案影像之像面之傾斜角度變化。透過遮罩M之曝光光EL於透過像位移機構19、焦點位置調整機構31後,入射至第1組反射折射型光學系統21。反射折射型光學系統21形成遮罩M之圖案之中間像,並且具備直角稜鏡24、透鏡系統25及凹面鏡26。直角稜鏡24於θZ方向上旋轉自如,且可使遮罩M之圖案影像旋轉。 Each of the projection optical modules PLa to PLg includes an image displacement mechanism 19 , a focus position adjustment mechanism 31 , two sets of catadioptric optical systems 21 and 22 , a field diaphragm 20 , and a magnification adjustment mechanism 23 . picture The displacement mechanism 19 displaces the pattern image of the mask M along the X-axis direction or the Y-axis direction by rotating two parallel plane glass plates in the θY direction or the θX direction respectively. In addition, the focus position adjustment mechanism 31 is provided with a pair of wedge-shaped mirrors, and changes the image plane position of the pattern image by changing the sum of the thicknesses of the wedge-shaped mirrors in the optical path. By winding at least one wedge-shaped mirror, The rotation of the optical axis causes the tilt angle of the image plane of the pattern image to change. The exposure light EL that has passed through the mask M passes through the image displacement mechanism 19 and the focus position adjustment mechanism 31, and then enters the first group of catadioptric optical system 21. The catadioptric optical system 21 forms an intermediate image of the pattern of the mask M, and is provided with a rectangular lens 24, a lens system 25 and a concave mirror 26. The right-angle lens 24 can rotate freely in the θZ direction, and can rotate the pattern image of the mask M.

視場光闌20配置於反射折射型光學系統21所形成之中間像之像面或者其附近。視場光闌20設定基板P上之投影區域。透過視場光闌20之曝光光EL入射至第2組反射折射型光學系統22。反射折射型光學系統22與反射折射型光學系統21同樣地,具備直角稜鏡27、透鏡系統28及凹面鏡29。直角稜鏡27亦於θZ方向上旋轉自如,且可使遮罩M之圖案影像旋轉。 The field diaphragm 20 is arranged on or near the image plane of the intermediate image formed by the catadioptric optical system 21 . The field diaphragm 20 sets the projection area on the substrate P. The exposure light EL passing through the field diaphragm 20 is incident on the second group of catadioptric optical systems 22 . Like the catadioptric optical system 21, the catadioptric optical system 22 includes a rectangular lens 27, a lens system 28, and a concave mirror 29. The right-angle lens 27 can also rotate freely in the θZ direction, and can rotate the pattern image of the mask M.

自反射折射型光學系統22射出之曝光光EL通過倍率調整機構23,並使遮罩M之圖案影像以直立等倍於基板P上成像。倍率調整機構23沿Z軸依序具有第1平凸透鏡、兩凸透鏡及第2平凸透鏡,藉由使兩凸透鏡沿Z軸方向移動而使遮罩M之圖案影像之倍率變化。 The exposure light EL emitted from the catadioptric optical system 22 passes through the magnification adjustment mechanism 23, and the pattern image of the mask M is imaged on the substrate P at an upright and equal magnification. The magnification adjustment mechanism 23 has a first plano-convex lens, two convex lenses and a second plano-convex lens in sequence along the Z-axis, and changes the magnification of the pattern image of the mask M by moving the two convex lenses along the Z-axis direction.

圖3(a)係表示各投影光學模組PLa~PLg所具備之視場光闌20之圖。視場光闌20配置於相對於遮罩M及基板P大致共軛之位置。各投影光學模組PLa~PLg分別具有視場光闌20,各投影光學模組PLa~PLg之基板P上之投影區域50a~50g係由形成於分別對應之視場光闌20之開口K設定。於本實施形態中,各開口K形成為具有沿Y軸方向平行之2邊之等腰梯形狀或者具有沿Y軸方向平行之2邊及沿X軸方向平行之1邊之梯形狀,投影區域50a~50g設定為與分別對應之開口K成為共軛關係之梯形形狀。 FIG. 3(a) is a diagram showing the field diaphragm 20 provided in each of the projection optical modules PLa to PLg. The field diaphragm 20 is arranged at a substantially conjugate position with respect to the mask M and the substrate P. Each projection optical module PLa~PLg has a field diaphragm 20 respectively, and the projection areas 50a~50g on the substrate P of each projection optical module PLa~PLg are set by the opening K formed in the corresponding field diaphragm 20. . In this embodiment, each opening K is formed into an isosceles trapezoid shape having two parallel sides along the Y-axis direction or a trapezoidal shape having two parallel sides along the Y-axis direction and one parallel side along the X-axis direction, and the projection area is 50a ~ 50g are set to a trapezoidal shape that is in a conjugate relationship with the corresponding opening K.

再者,於圖3(a)中,視場光闌20係作為形成有梯形狀之開口之俯視下為矩形之板狀構件而圖示,實際上如圖3(b)所示,包含設定開口K之Y軸方向之寬度之邊緣(端部)之光闌構件20y與包含設定開口K之X軸方向之寬度之邊緣(端部)之光闌構件20x被設為獨立之構件。並且,上述光闌構件20y、20x中,光闌構件20y配置於相對於遮罩M及基板P之共軛面CP上,光闌構件20x配置於較共軛面CP略微更靠曝光光EL之入射側(+Z側)。 Furthermore, in FIG. 3(a) , the field diaphragm 20 is illustrated as a plate-like member that is rectangular in plan view and has a trapezoid-shaped opening. In fact, as shown in FIG. 3(b) , the field diaphragm 20 includes settings. The diaphragm member 20y at the edge (end portion) of the width of the opening K in the Y-axis direction and the diaphragm member 20x including the edge (end portion) that sets the width of the opening K in the X-axis direction are set as independent members. Moreover, among the above-described aperture members 20y and 20x, the aperture member 20y is disposed on the conjugate surface CP with respect to the mask M and the substrate P, and the aperture member 20x is disposed slightly closer to the exposure light EL than the conjugate surface CP. Incident side (+Z side).

返回至圖3(a),投影光學模組PLa~PLg中,投影光學模組PLf具有遮光板30。遮光板30係於俯視下(自Z軸方向觀察時)為大致長方形之板構件,並且如圖3(b)所示,相對於投影光學模組PLf所具備之視場光闌20配置於曝光光EL之出射側(-Z側)。 Returning to FIG. 3(a) , among the projection optical modules PLa to PLg, the projection optical module PLf has a light shielding plate 30 . The light shielding plate 30 is a substantially rectangular plate member in plan view (viewed from the Z-axis direction), and as shown in FIG. 3(b) , it is arranged in the exposure position with respect to the field diaphragm 20 of the projection optical module PLf. The emission side (-Z side) of light EL.

返回至圖3(a),遮光板30可藉由下述驅動機構80(參照圖8(a)等)於+Y側之長邊與形成視場光闌20之開口K之+Y側之端部(斜邊)成為大致平行之第1傾斜配置(參照圖4(a))和-Y側之長邊與形成視場光闌20之開口K之-Y側之端部(斜邊)成為大致平行之第2傾斜配置(參照圖4(b))之間進行驅動。如此一來,遮光構件30可藉由於第1傾斜配置(第1傾斜角度)與第2傾斜配置(第2傾斜角度)之間移動,而變更藉由投影光學模組PLf而產生之投影區域50f之形狀。再者,第1傾斜角度及第2傾斜角度取決於梯形狀之投影區域之傾斜角度。例如,圖4(a)所示之第1傾斜角度係遮光板30之相對於Y軸方向之傾斜角度與梯形狀之投影區域50f之+Y軸方向之端邊之傾斜角度平行。又,圖4(b)所示之第2傾斜角度係遮光板30之相對於Y軸方向之傾斜角度與梯形狀之投影區域50f之-Y軸方向之端邊之傾斜角度平行。即,可鑒於投影區域之形狀,任意地決定遮光板30之傾斜角度(第1傾斜角度及第2傾斜角度)。 Returning to FIG. 3(a) , the light shielding plate 30 can be moved between the long side of the +Y side and the +Y side of the opening K forming the field diaphragm 20 by the following driving mechanism 80 (refer to FIG. 8(a) etc.). The end (hypotenuse) is substantially parallel to the first oblique arrangement (see FIG. 4(a) ) and the long side on the -Y side and the end (hypotenuse) on the -Y side forming the opening K of the field diaphragm 20 The drive is performed between the second inclined arrangements (see FIG. 4(b) ) that are substantially parallel. In this way, the light shielding member 30 can change the projection area 50f generated by the projection optical module PLf by moving between the first tilted configuration (first tilt angle) and the second tilted configuration (second tilt angle). the shape. Furthermore, the first tilt angle and the second tilt angle depend on the tilt angle of the trapezoid-shaped projection area. For example, the first inclination angle shown in FIG. 4(a) is that the inclination angle of the light shielding plate 30 with respect to the Y-axis direction is parallel to the inclination angle of the +Y-axis direction end edge of the trapezoid-shaped projection area 50f. In addition, the second inclination angle shown in FIG. 4(b) is that the inclination angle of the light shielding plate 30 with respect to the Y-axis direction is parallel to the inclination angle of the end edge in the −Y-axis direction of the trapezoid-shaped projection area 50f. That is, the inclination angle (the first inclination angle and the second inclination angle) of the light shielding plate 30 can be determined arbitrarily in consideration of the shape of the projection area.

又,遮光板30可藉由驅動機構80(參照圖8(a)等)沿Y軸方向直進移動,且可設定變更藉由投影光學模組PLf而產生之投影區域50f之Y軸方向 之寬度。又,遮光板30亦可藉由沿Y軸方向直進移動,而移動至不與開口K重合之位置、即開口K僅由視場光闌20設定之位置。 In addition, the light shielding plate 30 can move linearly in the Y-axis direction by the driving mechanism 80 (see FIG. 8(a) and the like), and can set and change the Y-axis direction of the projection area 50f generated by the projection optical module PLf. The width. In addition, the light shielding plate 30 can also be moved linearly in the Y-axis direction to a position that does not coincide with the opening K, that is, a position where the opening K is set only by the field diaphragm 20 .

此處,對使用習知之遮光板之實施例與使用遮光板30之本實施形態之差異進行說明。 Here, the difference between the embodiment using a conventional light shielding plate and the present embodiment using the light shielding plate 30 will be described.

於圖5(a)~圖6(b)中記載有表示進行接合曝光時之投影區域與遮光部之位置關係之圖。於圖5(a)~圖6(b)中之紙面右側示出藉由上述實施形態中所使用之複數個投影光學模組投影至基板上之投影區域之一部分(投影區域50e~50g)與藉由對曝光光進行遮光而規定投影區域之遮光板30。又,於圖5(a)~圖6(b)中之紙面左側示出將投影區域配置成一行之形態。 Figures 5(a) to 6(b) illustrate the positional relationship between the projection area and the light-shielding portion when joint exposure is performed. The right side of the paper in Figures 5(a) to 6(b) shows a part of the projection area (projection area 50e~50g) projected onto the substrate by the plurality of projection optical modules used in the above embodiment. The light-shielding plate 30 defines a projection area by blocking exposure light. In addition, the left side of the paper in FIGS. 5(a) to 6(b) shows a form in which the projection areas are arranged in a line.

如圖5(a)所示,於在投影區域50e之X軸方向之投影寬度於Y軸方向上大致固定之區域、即梯形狀之投影區域50e之中心部進行圖案接合之情形時,藉由將遮光板30配置於投影區域50e之中心部,可形成投影寬度沿Y軸方向變化之曝光量之傾斜部G(連接部)。 As shown in FIG. 5(a) , when pattern bonding is performed in a region where the projection width in the X-axis direction of the projection area 50e is substantially constant in the Y-axis direction, that is, in the center of the trapezoid-shaped projection area 50e, by Arranging the light shielding plate 30 at the center of the projection area 50e can form a sloped portion G (connection portion) with an exposure amount whose projection width changes along the Y-axis direction.

然而,如圖5(b)所示,於在投影區域50e之X軸方向之投影寬度沿Y軸方向變化之區域、即梯形狀之投影區域中之端部區域進行圖案接合之情形時,若僅由規定投影區域50e之遮光部30形成曝光量之傾斜部G,則於傾斜部G曝光量變得過多而無法進行圖案接合。 However, as shown in FIG. 5(b) , when pattern bonding is performed in an area where the projection width in the X-axis direction of the projection area 50e changes along the Y-axis direction, that is, in the end area of the trapezoid-shaped projection area, if If the inclined portion G of the exposure amount is formed only by the light shielding portion 30 of the predetermined projection area 50e, the exposure amount in the inclined portion G will become too much and pattern bonding will not be possible.

因此,如圖6(a)所示,若除投影區域50e之遮光板30以外,亦於投影區域50f配置相同之遮光板30A,則可形成曝光量之傾斜部G,從而可進行圖案接合。遮光板30A係以傾斜角度與遮光板30成為相等之方式配置。再者,遮光板30與遮光板30A可為獨立之構件,亦可藉由共用之構件形成。 Therefore, as shown in FIG. 6(a) , if the same light shielding plate 30A is arranged in the projection area 50f in addition to the light shielding plate 30 in the projection area 50e, the inclined portion G of the exposure amount can be formed, and pattern bonding can be performed. The light shielding plate 30A is arranged so that the inclination angle becomes equal to that of the light shielding plate 30 . Furthermore, the light-shielding plate 30 and the light-shielding plate 30A may be independent components, or may be formed from a common component.

進而,即便不如圖6(a)所示般配置遮光板30A,亦可藉由如圖6(b)所示般變更遮光板30之傾斜角度,而僅由規定投影區域50e之1個遮光板30形成傾斜部G。將遮光板30之傾斜角度以與投影區域50e之端部區域之角度成 為平行之方式進行變更。即,將遮光板30之傾斜角度以與投影區域50f之端部區域之角度成為平行之方式進行變更。藉此,可進行投影區域50e之端部區域與投影區域50f之端部區域之圖案接合。以投影區域50f之端部區域正好沿+Y方向移動之方式進行圖案接合。藉此,無須增加遮光板,並且與圖6(a)之情形時相比,無須使投影區域50e之遮光板與投影區域50f之遮光板同步,因此可使曝光裝置簡單化。 Furthermore, even if the light shielding plate 30A is not arranged as shown in FIG. 6(a) , only one light shielding plate can be used to define the projection area 50e by changing the inclination angle of the light shielding plate 30 as shown in FIG. 6(b) . 30 forms the inclined portion G. The inclination angle of the light shielding plate 30 is at an angle with the end area of the projection area 50e. Make changes in a parallel manner. That is, the inclination angle of the light shielding plate 30 is changed so that it becomes parallel to the angle of the end region of the projection area 50f. Thereby, the end area of the projection area 50e and the end area of the projection area 50f can be pattern-joined. Pattern bonding is performed so that the end area of the projection area 50f moves exactly in the +Y direction. Thereby, there is no need to add a light shielding plate, and compared with the case of FIG. 6(a) , there is no need to synchronize the light shielding plate of the projection area 50e with the light shielding plate of the projection area 50f, so the exposure device can be simplified.

又,亦可如下所述般對使用習知之遮光板之實施例與使用遮光板30之本實施形態之差異進行說明。 In addition, the difference between the embodiment using a conventional light shielding plate and the present embodiment using the light shielding plate 30 can also be explained as follows.

如圖7(a)所示,於習知之實施例中,由於使用相對於投影區域50f之傾斜配置僅向一方向傾斜之遮光板,故而可設定僅於在Y軸方向之T區域及α區域、β區域可利用1次掃描移動進行曝光之Y軸方向之掃描寬度。例如,於在T區域及β區域內進行接合曝光時,可藉由使遮光板沿Y軸方向移動而設定掃描寬度,於在α區域或γ區域進行接合曝光時,可藉由利用照明系統模組IMf或照明系統模組IMg之照明快門6(參照圖2)對曝光光進行遮光而設定掃描寬度。然而,於在區域U內配置有遮光板之情形時,曝光量變得不均勻,而可進行接合曝光之區域受到限制。 As shown in FIG. 7(a) , in the conventional embodiment, since a light shielding plate that is inclined in only one direction relative to the projection area 50f is used, it is possible to set only the T area and the α area in the Y-axis direction. , The scanning width in the Y-axis direction that can be exposed by one scan movement in the β area. For example, when joint exposure is performed in the T area and β area, the scan width can be set by moving the light shield along the Y-axis direction. When joint exposure is performed in the α area or γ area, the scan width can be set by using the illumination system model. The illumination shutter 6 (refer to FIG. 2 ) of the group IMf or the illumination system module IMg blocks the exposure light and sets the scan width. However, when a light shielding plate is arranged in the area U, the exposure amount becomes uneven and the area where joint exposure can be performed is limited.

相對於此,於使用遮光板30之本實施形態中,由於可如圖7(b)所示般使遮光板30於第1傾斜配置及第2傾斜配置之間移動,故而即便於在U區域內配置有遮光板30之情形時,亦可使曝光量均勻而進行接合曝光。例如,於在T區域內進行接合曝光時,可以第1傾斜配置使用遮光板30,於在U區域內進行接合曝光時,可使遮光板30移動至第2傾斜配置後使用。 On the other hand, in this embodiment using the light shielding plate 30, the light shielding plate 30 can be moved between the first tilted arrangement and the second tilted arrangement as shown in FIG. 7(b), so that it is suitable even in the U region. When the light shielding plate 30 is disposed inside, joint exposure can be performed to make the exposure amount uniform. For example, when the joint exposure is performed in the T region, the light shielding plate 30 can be used in the first tilted position. When the joint exposure is performed in the U region, the light shielding plate 30 can be moved to the second tilted position.

又,如圖7(c)所示,若將遮光板30以除投影區域50f以外,亦可對投影區域50e及投影區域50g進行遮光之方式配置,則亦可於S區域進行接合曝光。即,若使用本實施形態之遮光板30,則可於Y軸方向之任何區域進行接合 曝光。 Moreover, as shown in FIG. 7(c) , if the light shielding plate 30 is arranged to shield the projection area 50e and the projection area 50g in addition to the projection area 50f, joint exposure can also be performed in the S area. That is, if the light shielding plate 30 of this embodiment is used, bonding can be performed in any area in the Y-axis direction. exposure.

繼而,對藉由使用驅動機構80使本實施形態之遮光板30移動至第1傾斜配置或第2傾斜配置而對開口K進行設定變更之方法進行說明。 Next, a method of changing the setting of the opening K by using the drive mechanism 80 to move the light shielding plate 30 of this embodiment to the first tilted configuration or the second tilted configuration will be described.

如圖8(a)所示,驅動機構80隔著開口K(於開口K之-X側、+X側)具備一對致動器82、84。致動器82係所謂之進給螺桿裝置,具備馬達(伺服馬達)82a、由該馬達82a驅動之螺桿82b、及螺合於該螺桿82b之圓筒狀之螺母82c,且可將螺母82c於Y軸方向以較開口K長之行程往返驅動。於遮光板30之-X側之端部附近形成有俯視U字狀之缺口30a,螺母82c插入於該缺口30a內。致動器84亦為與致動器82相同之構成(馬達84a、螺桿84b、螺母84c)之進給螺桿裝置,但螺母84c相對於遮光板30於θZ方向上旋轉自如地安裝於遮光板30之+X側之端部附近之方面不同。驅動機構80所具有之一對致動器82、84分別獨立地由控制裝置CONT(參照圖2)控制。 As shown in FIG. 8( a ), the driving mechanism 80 includes a pair of actuators 82 and 84 across the opening K (on the −X side and the +X side of the opening K). The actuator 82 is a so-called feed screw device and includes a motor (servo motor) 82a, a screw rod 82b driven by the motor 82a, and a cylindrical nut 82c screwed to the screw rod 82b, and can move the nut 82c to the screw rod 82b. The Y-axis direction is driven back and forth with a stroke longer than the opening K. A U-shaped notch 30a in plan view is formed near the -X side end of the light shielding plate 30, and the nut 82c is inserted into the notch 30a. The actuator 84 is also a feed screw device having the same configuration as the actuator 82 (motor 84a, screw 84b, nut 84c), but the nut 84c is mounted on the light shielding plate 30 so as to be rotatable in the θZ direction relative to the light shielding plate 30 The aspect near the end on the +X side is different. The pair of actuators 82 and 84 provided in the drive mechanism 80 are independently controlled by the control device CONT (see FIG. 2 ).

如圖8(a)所示,驅動機構80將遮光板30定位於遮光板30之+Y側之邊緣(端部)與形成視場光闌20(於圖8(a)中未圖示,參照圖3(a))之開口K之邊緣(端部)中+Y側之邊緣平行之位置,於遮光板30之-Y側形成曝光光之光路,藉此可使產生於基板P(參照圖1)上之投影區域50f為俯視梯形(等腰梯形)。遮光板30之位置及角度係基於未圖示之測量裝置(位置測量裝置、光量測量裝置等)之輸出或者對致動器82、84之輸入信號而測量。此時,開口K中較遮光板30更靠+Y側之區域係藉由可動式之擋板裝置60以不使曝光光通過之方式遮光。以下,將如圖8(a)所示般於遮光板30之-Y側形成有曝光光之光路,且藉由通過該光路之曝光光而於基板P上產生俯視梯形之投影區域50f之狀態稱為遮光板30之第1模式進行說明。 As shown in FIG. 8(a) , the driving mechanism 80 positions the light shielding plate 30 at the edge (end) of the +Y side of the light shielding plate 30 and forms the field diaphragm 20 (not shown in FIG. 8(a) ). Referring to the position of the edge (end) of the opening K in Figure 3(a) that is parallel to the edge on the +Y side, an optical path of the exposure light is formed on the -Y side of the light shielding plate 30, whereby the light path generated on the substrate P (refer to The projected area 50f in Figure 1) is a trapezoid (isosceles trapezoid) in plan view. The position and angle of the light shielding plate 30 are measured based on the output of a measuring device (not shown) (position measuring device, light quantity measuring device, etc.) or the input signal to the actuators 82 and 84 . At this time, the area of the opening K that is closer to the +Y side than the light shielding plate 30 is shielded from light by the movable baffle device 60 in a manner that prevents the exposure light from passing through. Next, as shown in FIG. 8(a) , an optical path of the exposure light is formed on the -Y side of the light shielding plate 30 , and a trapezoidal projection area 50f in plan view is generated on the substrate P by the exposure light passing through the optical path. A first mode called the light shielding plate 30 will be described.

又,驅動機構80可藉由自圖8(a)所示之狀態將一對致動器82、84各自之螺母82c、84c以相同之行程(移動量)沿Y軸方向驅動,而對開口K之 面積、即產生於基板P(參照圖1)上之投影區域50f(俯視下為梯形)之寬度(面積)進行設定變更。此時,擋板裝置60亦對應於遮光板30之位置而沿Y軸方向被驅動。 In addition, the driving mechanism 80 can drive the nuts 82c and 84c of the pair of actuators 82 and 84 in the Y-axis direction with the same stroke (movement amount) from the state shown in FIG. 8(a) to open the opening. K's The area, that is, the width (area) of the projection area 50f (trapezoid in plan view) generated on the substrate P (see FIG. 1 ) is set and changed. At this time, the baffle device 60 is also driven in the Y-axis direction corresponding to the position of the light shielding plate 30 .

再者,亦與不具備遮光板30之投影光學模組PLa~PLe、PLg(參照圖1)分別對應地具備上述擋板裝置60,且可任意地選擇將形成於該投影光學模組PLa~PLe、PLg各自具備之視場光闌20之開口K(參照圖3(a))開放及遮蔽。再者,於本實施形態中,照明光學系統IL(參照圖1)具有擋板裝置60,但並不限定於此,只要位於曝光光EL之光路上,則亦可配置於其他位置。 Furthermore, the above-mentioned baffle device 60 is also provided correspondingly to the projection optical modules PLa to PLe and PLg (refer to FIG. 1 ) that do not have the light shielding plate 30 , and the projection optical modules PLa to PLe and PLg formed on the projection optical modules PLa to PLg can be arbitrarily selected. The opening K (refer to FIG. 3(a) ) of the field diaphragm 20 provided by PLe and PLg is open and blocked. Furthermore, in this embodiment, the illumination optical system IL (see FIG. 1 ) has the baffle device 60 , but it is not limited to this and may be disposed at other positions as long as it is located on the optical path of the exposure light EL.

又,驅動機構80可自上述第1模式(作為一例,參照圖8(a))如圖8(b)所示般以使致動器82之螺母82c位於較致動器84之螺母84c更靠+Y側之方式控制螺母82c、84c各自之Y位置,藉此將遮光板30定位於遮光板30之-Y側之邊緣(端部)與形成視場光闌20(於圖8(b)中未圖示,參照圖3(a))之開口K之邊緣(端部)中-Y側之邊緣平行之位置。藉此,可使產生於基板P(參照圖1)上之投影區域50f為俯視平行四邊形。以下,將如圖8(b)所示般於遮光板30之-Y側形成有曝光光之光路,且藉由通過該光路之曝光光而於基板P上產生有俯視平行四邊形之投影區域50f之狀態稱為遮光板30之第2模式並進行說明。於本第2模式中,亦可藉由將一對螺母82c、84c沿Y軸方向同步驅動,而對開口K之面積、即產生於基板P(參照圖1)上之投影區域50f(俯視下為平行四邊形)之寬度(面積)進行設定變更。又,開口K中之較遮光板30更靠+Y側之區域亦對應於遮光板30之位置並藉由擋板裝置60適當被遮光。 In addition, the driving mechanism 80 can be configured to position the nut 82c of the actuator 82 farther than the nut 84c of the actuator 84 as shown in FIG. 8(b) from the above-described first mode (see FIG. 8(a) as an example). The respective Y positions of the nuts 82c and 84c are controlled on the +Y side, thereby positioning the light shielding plate 30 at the edge (end) of the -Y side of the light shielding plate 30 and forming the field diaphragm 20 (see Figure 8(b) ), refer to the position where the edge (end) of the opening K in Figure 3(a) is parallel to the edge on the Y side. Thereby, the projection area 50f generated on the substrate P (see FIG. 1 ) can be made into a parallelogram in plan view. Next, as shown in FIG. 8(b), an optical path of exposure light is formed on the -Y side of the light shielding plate 30, and a projection area 50f of a parallelogram in plan view is generated on the substrate P by the exposure light passing through the optical path. This state is called the second mode of the light shielding plate 30 and will be described below. In this second mode, the area of the opening K, that is, the projected area 50f (top view) generated on the substrate P (refer to FIG. 1) can also be controlled by synchronously driving the pair of nuts 82c and 84c in the Y-axis direction. Change the setting for the width (area) of a parallelogram. In addition, the area of the opening K that is closer to the +Y side than the light shielding plate 30 also corresponds to the position of the light shielding plate 30 and is appropriately shielded from light by the baffle device 60 .

又,驅動機構80可自上述第2模式(作為一例,參照圖8(b))如圖8(c)所示般使擋板裝置60之位置沿遮光板30之-Y側移動,藉此於遮光板30之+Y側形成曝光光之光路。由於遮光板30之+Y側之邊緣(端部)與形成視場光闌20(於圖8(c)中未圖示,參照圖3(a))之開口K之邊緣(端部)中-Y側之 邊緣平行,故而藉由通過上述光路之曝光光而產生於基板P上之投影區域50f於俯視下成為梯形(等腰梯形)。以下,將如圖8(c)所示般於遮光板30之+Y側形成有曝光光之光路,且藉由通過該光路之曝光光而於基板P上產生有俯視下為梯形之投影區域50f之狀態稱為遮光板30之第3模式並進行說明。於本第3模式中,亦可藉由將一對螺母82c、84c沿Y軸方向同步驅動,而對開口K之面積、即產生於基板P(參照圖1)上之投影區域50f(俯視下為梯形)之寬度(面積)進行設定變更。又,開口K中之較遮光板30更靠-Y側之區域對應於遮光板30之位置並藉由擋板裝置60而適當被遮光。 In addition, the driving mechanism 80 can move the position of the baffle device 60 along the −Y side of the light shielding plate 30 as shown in FIG. 8(c) from the second mode (as an example, see FIG. 8(b) ). An optical path of the exposure light is formed on the +Y side of the light shielding plate 30 . Since the edge (end) of the +Y side of the light shielding plate 30 is between the edge (end) of the opening K forming the field diaphragm 20 (not shown in FIG. 8(c), refer to FIG. 3(a)), -Y side The edges are parallel, so the projection area 50f generated on the substrate P by the exposure light passing through the above-mentioned optical path becomes a trapezoid (isosceles trapezoid) in plan view. Next, as shown in FIG. 8(c) , an optical path of the exposure light will be formed on the +Y side of the light shielding plate 30 , and a trapezoidal projection area in plan view will be generated on the substrate P by the exposure light passing through the optical path. The state of 50f is called the third mode of the light shielding plate 30 and will be described below. In this third mode, the area of the opening K, that is, the projected area 50f (top view) generated on the substrate P (refer to FIG. 1) can also be controlled by synchronously driving the pair of nuts 82c and 84c in the Y-axis direction. Change the setting for the width (area) of the trapezoid. In addition, the area of the opening K closer to the -Y side than the light shielding plate 30 corresponds to the position of the light shielding plate 30 and is appropriately shielded from light by the baffle device 60 .

又,驅動機構80可自上述第3模式(作為一例,參照圖8(c))如圖8(d)所示般以使螺母84c位於較螺母82c更靠+Y側之方式控制螺母82c、84c之Y位置,藉此將遮光板30定位於遮光板30之+Y側之邊緣(端部)與形成視場光闌20(於圖8(b)中未圖示,參照圖3(a))之開口K之邊緣(端部)中+Y側之邊緣成為平行之位置。藉此,可將產生於基板P(參照圖1)上之投影區域50f設為俯視下平行四邊形。以下,將如圖8(d)所示般於遮光板30之+Y側形成有曝光光之光路,且藉由通過該光路之曝光光而於基板P上產生有俯視下為平行四邊形之投影區域50f之狀態稱為遮光板30之第4模式並進行說明。於本第4模式中,亦可藉由將一對螺母82c、84c沿Y軸方向同步驅動,而對開口K之面積、即產生於基板P(參照圖1)上之投影區域50f(俯視下為平行四邊形)之寬度(面積)進行設定變更。又,開口K中之較遮光板30更靠-Y側之區域對應於遮光板30之位置並藉由擋板裝置60而適當被遮光。 In addition, the drive mechanism 80 can control the nut 82c and the nut 82c so that the nut 84c is located on the +Y side relative to the nut 82c as shown in FIG. 8(d) from the above-mentioned third mode (see FIG. 8(c) as an example). The Y position of 84c is used to position the light shielding plate 30 at the edge (end) of the +Y side of the light shielding plate 30 and form the field diaphragm 20 (not shown in Figure 8(b), refer to Figure 3(a) )) of the edge (end) of the opening K, the edge on the +Y side becomes a parallel position. Thereby, the projection area 50f generated on the substrate P (see FIG. 1 ) can be made into a parallelogram in plan view. Next, as shown in FIG. 8(d), an optical path of the exposure light is formed on the +Y side of the light shielding plate 30, and a projection of a parallelogram in plan view is generated on the substrate P by the exposure light passing through the optical path. The state of the region 50f is called the fourth mode of the light shielding plate 30 and will be described below. In this fourth mode, the area of the opening K, that is, the projected area 50f (top view) generated on the substrate P (refer to FIG. 1) can also be controlled by synchronously driving the pair of nuts 82c and 84c in the Y-axis direction. Change the setting for the width (area) of a parallelogram. In addition, the area of the opening K closer to the -Y side than the light shielding plate 30 corresponds to the position of the light shielding plate 30 and is appropriately shielded from light by the baffle device 60 .

如上所述,於本實施形態中,可相對於遮光板30於開口K之-Y方向(第1及第2模式)及+Y方向(第3及第4模式)之兩方向形成曝光光之光路,且可分別於第1~第4模式中任意地調節開口K之寬度。即,視場光闌20、遮光板30、驅動機構80、及擋板裝置60構成使投影光學模組PLf於基板P上產生之投影 區域50f之形狀及位置任意地變化之可變視場光闌裝置。 As described above, in this embodiment, the exposure light can be formed in both the −Y direction (first and second modes) and the +Y direction (third and fourth modes) of the opening K with respect to the light shielding plate 30 . optical path, and the width of the opening K can be adjusted arbitrarily in the 1st to 4th modes respectively. That is, the field diaphragm 20, the light shielding plate 30, the driving mechanism 80, and the baffle device 60 constitute the projection that the projection optical module PLf produces on the substrate P. A variable field diaphragm device in which the shape and position of the area 50f can be changed arbitrarily.

圖9係表示產生於基板P上之投影區域50a~50g之俯視圖。投影區域50a~50g係以於Y軸方向上相鄰之投影區域之端部彼此、即端部51a與51b、端部51c與51d、端部51e與51f、端部51g與51h、端部51i與51j、端部51k與51l於Y軸方向上重合之方式(以Y軸方向之位置重複之方式)設定。因此,相對於投影區域50a~50g,一面將基板P沿X軸方向掃描,一面曝光(掃描曝光),藉此形成經重複曝光(雙重曝光)之重複區域52a~52f(於圖9中由短劃線夾持之區域)。 FIG. 9 is a top view showing the projection areas 50a to 50g generated on the substrate P. The projection areas 50a to 50g are the ends of the projection areas adjacent to each other in the Y-axis direction, that is, the ends 51a and 51b, the ends 51c and 51d, the ends 51e and 51f, the ends 51g and 51h, and the end 51i It is set so that it overlaps with 51j, and the end part 51k and 51l in the Y-axis direction (the position in the Y-axis direction repeats). Therefore, with respect to the projection areas 50a to 50g, the substrate P is exposed while scanning in the scribed clamping area).

又,於圖9中如虛線所示,遮光板30係藉由向上述第1及第2位置、以及Y軸方向之移動而適當設定投影區域50f之實效之大小。藉此,遮光板30於將基板P向X軸方向掃描並進行掃描曝光之情形時,可適當設定經由投影區域50f轉印之遮罩M之圖案影像之Y軸方向之寬度及形狀,且可適當設定作為與該圖案影像對應之潛像形成於基板P上之轉印圖案之Y軸方向之圖案寬度及圖案形狀。 In addition, as shown by the dotted line in FIG. 9 , the light shielding plate 30 appropriately sets the effective size of the projection area 50f by moving to the first and second positions and the Y-axis direction. Thereby, when the light shielding plate 30 scans the substrate P in the X-axis direction and performs scanning exposure, the width and shape of the pattern image of the mask M transferred through the projection area 50f can be appropriately set in the Y-axis direction, and can The pattern width and pattern shape in the Y-axis direction of the transfer pattern formed on the substrate P as a latent image corresponding to the pattern image are appropriately set.

繼而,對使用曝光裝置EX(參照圖1)進行多次掃描曝光,並將與遮罩M之圖案影像對應之複數個轉印圖案於基板P上接合之接合曝光方法進行說明。於以下之說明中,如圖10所示,分2次掃描曝光(第1及第2掃描曝光)將形成於遮罩M上之圖案PPA中Y軸方向上具有長度LA之部分圖案PA與Y軸方向上具有長度LB之部分圖案PB之2個區域之圖案影像依序轉印至基板P上,並將與該等圖案影像對應之轉印圖案MA、MB於基板P上接合而進行圖案合成。此時,對與部分圖案PA、PB各自之交界部45、46對應之轉印圖案MA、MB之交界部重複地進行曝光,藉此形成連接部MC。藉此,基板P上之整體之轉印圖案MPA成為部分圖案PA之轉印圖案MA與部分圖案PB之轉印圖案MB接合而成者。 Next, a bonding exposure method in which multiple transfer patterns corresponding to the pattern image of the mask M are bonded to the substrate P by performing multiple scanning exposures using the exposure device EX (see FIG. 1 ) will be described. In the following description, as shown in Figure 10, the partial patterns PA and Y having the length LA in the Y-axis direction of the pattern PPA formed on the mask M are divided into two scanning exposures (the first and second scanning exposures). The pattern images of the two areas of the partial pattern PB with length LB in the axial direction are sequentially transferred to the substrate P, and the transfer patterns MA and MB corresponding to the pattern images are joined on the substrate P to perform pattern synthesis. . At this time, the boundary portions of the transfer patterns MA and MB corresponding to the boundary portions 45 and 46 of the partial patterns PA and PB are repeatedly exposed, thereby forming the connection portion MC. Thereby, the entire transfer pattern MPA on the substrate P becomes a combination of the transfer pattern MA of the partial pattern PA and the transfer pattern MB of the partial pattern PB.

此處,於本實施形態中,可使用上述第1~第4之4個模式對藉由投影光學模組PLf產生於基板P上之投影區域50f之在Y軸方向之位置及寬度適當進行設定變更。藉此,於在第1掃描曝光中使用投影光學模組PLf形成轉印圖案 MA中之連接部之情形時,可任意地設定部分圖案PA之Y軸方向之長度LA及其端部形狀,或於在第2掃描曝光中使用投影光學模組PLf形成轉印圖案MB中之連接部之情形時,可任意地設定部分圖案PB之Y軸方向之長度LB及其端部形狀。 Here, in this embodiment, the above-mentioned first to fourth modes can be used to appropriately set the position and width of the projection area 50f generated on the substrate P by the projection optical module PLf in the Y-axis direction. change. Thereby, the transfer pattern is formed using the projection optical module PLf in the first scanning exposure. In the case of the connection portion in MA, the length LA in the Y-axis direction of the partial pattern PA and its end shape can be set arbitrarily, or the projection optical module PLf is used to form the transfer pattern MB in the second scanning exposure. In the case of the connecting portion, the length LB in the Y-axis direction of the partial pattern PB and the shape of its end portion can be set arbitrarily.

此處,實際上,於使用曝光裝置EX自1片素玻璃基板製造多片作為製品之液晶面板之情形時,要求液晶面板之尺寸、片數等各種各樣。例如要求於一片玻璃基板上製作尺寸互不相同之製品(液晶面板等之電路圖案)。因此,實際上,根據設計而要求接合曝光之次數(連接部MC之數量)、轉印圖案MA、MB之長度等為各種態樣。以下,對使用本實施形態之遮光板30進行接合曝光時之曝光方法具體地進行說明。再者,對於以下之第1曝光方法及第2曝光方法中投影光學系統模組為7個之情形進行說明,對於第3~第5曝光方法中投影光學系統模組為11個之情形進行說明,投影光學系統模組之個數可適當變更,關於接合曝光之概念、方法等,無關投影光學系統模組之個數而與圖6所說明之例相同。 Here, when actually using the exposure apparatus EX to manufacture a plurality of liquid crystal panels as products from one plain glass substrate, various sizes, number of pieces, etc. of the liquid crystal panels are required. For example, it is required to produce products of different sizes (circuit patterns for liquid crystal panels, etc.) on a single glass substrate. Therefore, in reality, the number of joint exposures (the number of connecting portions MC), the lengths of the transfer patterns MA and MB, and the like are required in various ways depending on the design. Hereinafter, the exposure method when performing joint exposure using the light shielding plate 30 of this embodiment will be specifically described. Furthermore, the case where the number of projection optical system modules is 7 in the following first and second exposure methods will be explained, and the case where the number of projection optical system modules in the third to fifth exposure methods will be 11 will be explained. , the number of projection optical system modules can be appropriately changed, and the concept, method, etc. of joint exposure are the same as the example illustrated in FIG. 6 regardless of the number of projection optical system modules.

於圖11(a)中圖示出第1曝光方法之基板P與遮罩M。於第1曝光方法中,自1片基板P製造2片面板PN1、PN2。面板PN1、PN2之尺寸相同,所使用之遮罩圖案亦相同。於第1曝光方法中,與圖10中說明之情形同樣,可利用2次曝光動作(1次接合曝光動作)完成對各面板PN1、PN2之曝光動作。 FIG. 11(a) illustrates the substrate P and the mask M of the first exposure method. In the first exposure method, two panels PN1 and PN2 are manufactured from one substrate P. The dimensions of panels PN1 and PN2 are the same, and the mask patterns used are also the same. In the first exposure method, as in the case explained in FIG. 10 , the exposure operation for each panel PN1 and PN2 can be completed using two exposure operations (one joint exposure operation).

於第1曝光方法中,如圖11(b)所示,以使遮光板30移動至第2傾斜配置,並且於+Y軸側形成曝光光之光路之方式使遮光板30移動。於該狀態下進行藉由使遮罩M與基板P沿X軸方向(第1方向)相對移動,而將遮罩圖案中之A區域之圖案形成於基板P之第1掃描曝光。繼而,進行藉由基板載置台驅動部PSTD使基板P沿Y軸方向(第2方向)移動之步進移動。接下來,如圖11(c)所示,以使遮光板30移動至第1傾斜配置,並且於-Y軸方向側形成曝光光之光路之方式使遮光板30沿Y軸方向移動。此時,於基板P上之各面板區域,於與A區域 對應之轉印圖案和與B區域對應之轉印圖案之間形成有連接部。以於該連接部曝光量變得均勻之方式進行遮光板30及擋板裝置60之定位。其後,進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之B區域之圖案形成於基板P之第2掃描曝光。藉此,可於基板P形成尺寸大於遮罩M之圖案區域PPA(參照圖10)之面板。 In the first exposure method, as shown in FIG. 11(b) , the light shielding plate 30 is moved to the second tilted position and the light path of the exposure light is formed on the +Y-axis side. In this state, the first scanning exposure is performed by relatively moving the mask M and the substrate P in the X-axis direction (first direction) to form the pattern of the A region in the mask pattern on the substrate P. Then, the substrate P is moved stepwise in the Y-axis direction (second direction) by the substrate mounting table driving unit PSTD. Next, as shown in FIG. 11(c) , the light shielding plate 30 is moved in the Y-axis direction so that the light-shielding plate 30 is moved to the first tilted position and an optical path of the exposure light is formed on the -Y-axis direction side. At this time, in each panel area on the substrate P, and in the area A A connection portion is formed between the corresponding transfer pattern and the transfer pattern corresponding to the B region. The light shielding plate 30 and the baffle device 60 are positioned so that the exposure amount becomes uniform at the connection portion. Thereafter, a second scanning exposure is performed by relatively moving the mask M and the substrate P along the X-axis direction to form the pattern of the B region in the mask pattern on the substrate P. Thereby, a panel with a size larger than the pattern area PPA (see FIG. 10 ) of the mask M can be formed on the substrate P.

於圖12(a)中圖示出第2曝光方法之基板P與遮罩M。於第2曝光方法中,自1片基板P製造2片面板PN1、PN2。面板PN1、PN2之尺寸相同,所使用之遮罩圖案亦相同。於第2曝光方法中,可製造大於第1曝光方法之面板。又,與第1曝光方法同樣地,可利用2次曝光動作(1次接合曝光動作)完成對各面板PN1、PN2之曝光動作。 FIG. 12(a) illustrates the substrate P and the mask M of the second exposure method. In the second exposure method, two panels PN1 and PN2 are manufactured from one substrate P. The dimensions of panels PN1 and PN2 are the same, and the mask patterns used are also the same. In the second exposure method, a panel larger than that in the first exposure method can be produced. In addition, similarly to the first exposure method, the exposure operation for each panel PN1 and PN2 can be completed using two exposure operations (one joint exposure operation).

於第2曝光方法中,如圖12(b)所示,以使規定藉由投影光學模組PLf(參照圖1)而產生之投影區域50f之遮光板30移動至第2傾斜配置,並且於+Y軸側形成曝光光之光路之方式使遮光板30移動。於該狀態下進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之A區域之圖案形成於基板P之第1掃描曝光。繼而,進行藉由基板載置台驅動部PSTD使基板P沿Y軸方向移動之步進移動。接下來,如圖12(c)所示,以使規定藉由投影光學模組PLb(參照圖1)而產生之投影區域50b之遮光板30移動至第1傾斜配置,並且於-Y軸側形成曝光光之光路之方式使遮光板30移動。此時,於基板P上之各面板區域,於與A區域對應之轉印圖案和與B區域對應之轉印圖案之間形成有連接部。以於該連接部曝光量變得均勻之方式進行遮光板30及擋板裝置60之定位。其後,進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之B區域之圖案形成於基板P之第2掃描曝光。藉此,可於基板P形成尺寸大於遮罩M之圖案區域PPA之面板。 In the second exposure method, as shown in FIG. 12(b) , the light shielding plate 30 defining the projection area 50f generated by the projection optical module PLf (see FIG. 1 ) is moved to the second tilted position, and The +Y-axis side forms the light path of the exposure light so that the light shielding plate 30 moves. In this state, the first scanning exposure is performed by relatively moving the mask M and the substrate P in the X-axis direction to form the pattern of the A region in the mask pattern on the substrate P. Then, the substrate P is moved stepwise in the Y-axis direction by the substrate mounting table driving unit PSTD. Next, as shown in FIG. 12(c) , the light shielding plate 30 defining the projection area 50b generated by the projection optical module PLb (see FIG. 1 ) is moved to the first tilted position, and is positioned on the -Y axis side. The light shielding plate 30 is moved in such a way that the light path of the exposure light is formed. At this time, in each panel area on the substrate P, a connection portion is formed between the transfer pattern corresponding to the A area and the transfer pattern corresponding to the B area. The light shielding plate 30 and the baffle device 60 are positioned so that the exposure amount becomes uniform at the connection portion. Thereafter, a second scanning exposure is performed by relatively moving the mask M and the substrate P along the X-axis direction to form the pattern of the B region in the mask pattern on the substrate P. Thereby, a panel with a size larger than the pattern area PPA of the mask M can be formed on the substrate P.

於圖13(a)中圖示出第3曝光方法之基板P與遮罩M。於第3曝光 方法中,自1片基板P製造2片面板PN1、PN2。面板PN1、PN2之尺寸相同,所使用之遮罩圖案亦相同。於第3曝光方法中,面板PN1、PN2之Y軸方向之長度為遮罩M之Y軸方向之長度之大致2倍,且與圖10中說明之情形不同,利用2次曝光動作(1次接合曝光動作)並未完成對各面板PN1、PN2之曝光動作。因此,於遮罩M上設定A區域、B區域、及C區域,並針對1片面板(製品)進行合計3次曝光動作(2次接合曝光動作)。 FIG. 13(a) illustrates the substrate P and the mask M of the third exposure method. Exposed on 3rd In the method, two panels PN1 and PN2 are manufactured from one substrate P. The dimensions of panels PN1 and PN2 are the same, and the mask patterns used are also the same. In the third exposure method, the length of the panels PN1 and PN2 in the Y-axis direction is approximately twice the length of the mask M in the Y-axis direction, and unlike the situation illustrated in Figure 10, two exposure operations (one The joint exposure action) has not completed the exposure action for each panel PN1 and PN2. Therefore, the A area, the B area, and the C area are set on the mask M, and a total of three exposure operations (two joint exposure operations) are performed on one panel (product).

於第3曝光方法中,如圖13(b)所示,以使規定藉由投影光學模組PL10而產生之投影區域5010之遮光板30移動至第1傾斜配置,並且於+Y軸側形成曝光光之光路之方式使遮光板30移動。於該狀態下進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之A區域之圖案形成於基板P之第1掃描曝光。繼而,進行藉由基板載置台驅動部PSTD使基板P沿Y軸方向移動之第1步進移動。接下來,如圖14(a)所示,以使規定藉由投影光學模組PL10而產生之投影區域5010之遮光板30移動至第2傾斜配置,並且於+Y軸側形成曝光光之光路之方式使遮光板30移動。此時,於基板P上之各面板區域,於與A區域對應之轉印圖案和與B區域對應之轉印圖案之間形成有連接部。以於該連接部曝光量變得均勻之方式進行遮光板30及擋板裝置60之定位。其後,進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之B區域之圖案形成於基板P之第2掃描曝光。進而,進行藉由基板載置台驅動部PSTD使基板P沿Y軸方向移動之第2步進移動。接下來,如圖14(b)所示,以使規定藉由投影光學模組PL4而產生之投影區域504之遮光板30移動至第1傾斜配置,並且於-Y軸側形成曝光光之光路之方式使遮光板30移動。此時,於基板P上之各面板區域,於與B區域對應之轉印圖案和與C區域對應之轉印圖案之間形成有連接部。以於該連接部曝光量變得均勻之方式進行遮光板30及擋板裝置60之定位。其後,進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之C區域之圖案形成於基板P之第3掃描曝 光。藉此,可於基板P形成尺寸大於遮罩M之圖案區域PPA之面板。 In the third exposure method, as shown in FIG. 13(b) , the light shielding plate 30 defining the projection area 50 10 generated by the projection optical module PL 10 is moved to the first tilted configuration, and positioned along the +Y axis. The light shielding plate 30 is moved to form a light path of the exposure light. In this state, the first scanning exposure is performed by relatively moving the mask M and the substrate P in the X-axis direction to form the pattern of the A region in the mask pattern on the substrate P. Next, the first step movement is performed in which the substrate P is moved in the Y-axis direction by the substrate mounting table driving unit PSTD. Next, as shown in FIG. 14(a) , the light shielding plate 30 defining the projection area 50 10 generated by the projection optical module PL 10 is moved to the second tilted position, and the exposure light is formed on the +Y-axis side. The light shield 30 is moved in a light path. At this time, in each panel area on the substrate P, a connection portion is formed between the transfer pattern corresponding to the A area and the transfer pattern corresponding to the B area. The light shielding plate 30 and the baffle device 60 are positioned so that the exposure amount becomes uniform at the connection portion. Thereafter, a second scanning exposure is performed by relatively moving the mask M and the substrate P along the X-axis direction to form the pattern of the B region in the mask pattern on the substrate P. Furthermore, a second step movement is performed in which the substrate P is moved in the Y-axis direction by the substrate mounting table driving unit PSTD. Next, as shown in FIG. 14(b) , the light shielding plate 30 defining the projection area 50 4 generated by the projection optical module PL 4 is moved to the first tilted configuration, and the exposure light is formed on the -Y axis side. The light shield 30 is moved in a light path. At this time, in each panel area on the substrate P, a connection portion is formed between the transfer pattern corresponding to the B area and the transfer pattern corresponding to the C area. The light shielding plate 30 and the baffle device 60 are positioned so that the exposure amount becomes uniform at the connection portion. Thereafter, a third scanning exposure is performed by relatively moving the mask M and the substrate P along the X-axis direction to form the pattern of the C region in the mask pattern on the substrate P. Thereby, a panel with a size larger than the pattern area PPA of the mask M can be formed on the substrate P.

又,於圖15(a)中圖示出第4曝光方法之基板P與遮罩M。於第4曝光方法中,自1片基板P製造3片面板PN1~PN3。面板PN1~PN3之尺寸相同,所使用之遮罩圖案亦相同。於第4曝光方法中,面板PN1~PN3之Y軸方向之長度為遮罩M之Y軸方向之長度之1.3倍左右,且與上述第3曝光方法不同,利用2次曝光動作(1次接合曝光動作)完成對各面板PN1~3之曝光動作。於第4曝光方法中,於遮罩M上設定A區域及B區域之2個區域,且針對1片面板(製品)進行合計2次曝光動作(1次接合曝光動作)。 Moreover, the substrate P and the mask M of the 4th exposure method are shown in FIG. 15(a). In the fourth exposure method, three panels PN1 to PN3 are manufactured from one substrate P. The dimensions of panels PN1~PN3 are the same, and the mask patterns used are also the same. In the fourth exposure method, the length of the panels PN1 to PN3 in the Y-axis direction is about 1.3 times the length of the mask M in the Y-axis direction. Different from the above-mentioned third exposure method, two exposure operations (one bonding operation) are used. Exposure action) Complete the exposure action for each panel PN1~3. In the fourth exposure method, two areas, area A and area B, are set on the mask M, and a total of two exposure operations (one joint exposure operation) are performed on one panel (product).

於第4曝光方法中,如圖15(b)所示,以使規定藉由投影光學模組PL10而產生之投影區域5010之遮光板30移動至第1傾斜配置,並且於+Y軸側形成曝光光之光路之方式使遮光板30移動。於該狀態下進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之A區域之圖案形成於基板P之第1掃描曝光。繼而,進行藉由基板載置台驅動部PSTD使基板P沿Y軸方向移動之步進移動。接下來,如圖16所示,以使規定藉由投影光學模組PL7而產生之投影區域507之遮光板30移動至第2傾斜配置,並且於-Y軸側形成曝光光之光路之方式使遮光板30移動。此時,於基板P上之各面板區域,於與A區域對應之轉印圖案和與B區域對應之轉印圖案之間形成有連接部。以於該連接部曝光量變得均勻之方式進行遮光板30及擋板裝置60之定位。其後,進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之B區域之圖案形成於基板P之第2掃描曝光。藉此,可於基板P形成尺寸大於遮罩M之圖案區域PPA(參照圖10)之面板。 In the fourth exposure method, as shown in FIG. 15(b) , the light shielding plate 30 defining the projection area 50 10 generated by the projection optical module PL 10 is moved to the first tilted configuration, and is positioned along the +Y axis. The light shielding plate 30 is moved to form a light path of the exposure light. In this state, the first scanning exposure is performed by relatively moving the mask M and the substrate P in the X-axis direction to form the pattern of the A region in the mask pattern on the substrate P. Then, the substrate P is moved stepwise in the Y-axis direction by the substrate mounting table driving unit PSTD. Next, as shown in FIG. 16 , the light shielding plate 30 defining the projection area 50 7 generated by the projection optical module PL 7 is moved to the second tilted position, and an optical path of the exposure light is formed on the -Y axis side. The light-shielding plate 30 is moved in this way. At this time, in each panel area on the substrate P, a connection portion is formed between the transfer pattern corresponding to the A area and the transfer pattern corresponding to the B area. The light shielding plate 30 and the baffle device 60 are positioned so that the exposure amount becomes uniform at the connection portion. Thereafter, a second scanning exposure is performed by relatively moving the mask M and the substrate P along the X-axis direction to form the pattern of the B region in the mask pattern on the substrate P. Thereby, a panel with a size larger than the pattern area PPA (see FIG. 10 ) of the mask M can be formed on the substrate P.

又,於圖17(a)中圖示出第5曝光方法之基板P與遮罩M。於第5曝光方法中,自1片基板P製造3片面板PN1~PN3。面板PN1與面板PN2、PN3相比,尺寸較小,Y軸方向之長度亦較短。又,面板PN1之曝光使用形成於遮罩M上之遮罩圖案MP1,面板PN2、PN3之曝光使用與上述遮罩圖案MP1不同之遮罩 圖案MP2。 In addition, the substrate P and the mask M of the fifth exposure method are illustrated in FIG. 17(a) . In the fifth exposure method, three panels PN1 to PN3 are manufactured from one substrate P. Compared with panels PN2 and PN3, panel PN1 is smaller in size and has a shorter length in the Y-axis direction. In addition, the mask pattern MP1 formed on the mask M is used for the exposure of the panel PN1, and the masks different from the above-mentioned mask pattern MP1 are used for the exposure of the panels PN2 and PN3. Pattern MP2.

於第5曝光方法中,如圖17(b)所示,以使規定藉由投影光學模組PL10而產生之投影區域5010之遮光板30移動至第2傾斜配置,並且於+Y軸側形成曝光光之光路之方式使遮光板30移動。於該狀態下進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之A1區域之圖案形成於基板P之第1掃描曝光。繼而,進行藉由基板載置台驅動部PSTD使基板P沿Y軸方向移動之第1步進移動。接下來,如圖18(a)所示,以使規定藉由投影光學模組PL7而產生之投影區域507之遮光板30移動至第2傾斜配置,並且於-Y軸側形成曝光光之光路之方式使遮光板30移動。此時,於基板P上之各面板區域,於與A1區域對應之轉印圖案和與B1區域對應之轉印圖案之間形成有連接部。以於該連接部曝光量變得均勻之方式進行遮光板30及擋板裝置60之定位。其後,進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之B1區域之圖案形成於基板P之第2掃描曝光。藉此,可將遮罩圖案MP1轉印至基板P,從而可於基板P形成面板PN1。 In the fifth exposure method, as shown in FIG. 17(b) , the light shielding plate 30 defining the projection area 50 10 generated by the projection optical module PL 10 is moved to the second tilted configuration, and is positioned along the +Y axis. The light shielding plate 30 is moved to form a light path of the exposure light. In this state, the first scanning exposure is performed by relatively moving the mask M and the substrate P in the X-axis direction to form the pattern of the A1 region in the mask pattern on the substrate P. Next, the first step movement is performed in which the substrate P is moved in the Y-axis direction by the substrate mounting table driving unit PSTD. Next, as shown in FIG. 18(a) , the light shielding plate 30 defining the projection area 50 7 generated by the projection optical module PL 7 is moved to the second tilted configuration, and the exposure light is formed on the -Y axis side. The light shield 30 is moved in a light path. At this time, in each panel area on the substrate P, a connection portion is formed between the transfer pattern corresponding to the A1 area and the transfer pattern corresponding to the B1 area. The light shielding plate 30 and the baffle device 60 are positioned so that the exposure amount becomes uniform at the connection portion. Thereafter, a second scanning exposure is performed by relatively moving the mask M and the substrate P along the X-axis direction to form the pattern of the B1 region in the mask pattern on the substrate P. Thereby, the mask pattern MP1 can be transferred to the substrate P, so that the panel PN1 can be formed on the substrate P.

進而,為了於基板P上形成面板PN2,進行藉由基板載置台驅動部PSTD使基板P沿X軸方向及Y軸方向移動之第2步進移動。又,於第2步進移動中,為了將遮罩圖案MP2轉印至基板P,藉由遮罩載置台驅動部MSTD使遮罩M移動。接下來,如圖18(b)所示,以使規定藉由投影光學模組PL10而產生之投影區域5010之遮光板30移動至第1傾斜配置,並且於+Y軸側形成曝光光之光路之方式使遮光板30移動。於該狀態下進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之A2區域之圖案形成於基板P之第3掃描曝光。繼而,進行藉由基板載置台驅動部PSTD使基板P沿Y軸方向移動之第3步進移動。接下來,如圖19所示,以使規定藉由投影光學模組PL7而產生之投影區域507之遮光板30移動至第2傾斜配置,並且於-Y軸側形成曝光光之光路之方式使遮光板30移動。此時,於基板P上之各面板區域,於與A2區域對應之轉印圖案和與B2區域對應 之轉印圖案之間形成有連接部。以於該連接部曝光量變得均勻之方式進行遮光板30及擋板裝置60之定位。其後,進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之B2區域之圖案形成於基板P之第4掃描曝光。藉此,可將遮罩圖案MP2轉印至基板P,從而可於基板P形成面板PN2。 Furthermore, in order to form the panel PN2 on the substrate P, a second step movement is performed in which the substrate P is moved in the X-axis direction and the Y-axis direction by the substrate mounting table driving unit PSTD. Moreover, in the second step movement, in order to transfer the mask pattern MP2 to the substrate P, the mask M is moved by the mask mounting table driving unit MSTD. Next, as shown in FIG. 18(b) , the light shielding plate 30 defining the projection area 50 10 generated by the projection optical module PL 10 is moved to the first tilted position, and the exposure light is formed on the +Y-axis side. The light shield 30 is moved in a light path. In this state, the third scanning exposure is performed by relatively moving the mask M and the substrate P in the X-axis direction to form the pattern of the A2 area in the mask pattern on the substrate P. Then, the third step movement is performed in which the substrate P is moved in the Y-axis direction by the substrate mounting table driving unit PSTD. Next, as shown in FIG. 19 , the light shielding plate 30 defining the projection area 50 7 generated by the projection optical module PL 7 is moved to the second tilted position, and an optical path of the exposure light is formed on the -Y axis side. The light-shielding plate 30 is moved in this way. At this time, in each panel area on the substrate P, a connection portion is formed between the transfer pattern corresponding to the A2 area and the transfer pattern corresponding to the B2 area. The light shielding plate 30 and the baffle device 60 are positioned so that the exposure amount becomes uniform at the connection portion. Thereafter, the fourth scanning exposure is performed by relatively moving the mask M and the substrate P along the X-axis direction to form the pattern of the B2 area in the mask pattern on the substrate P. Thereby, the mask pattern MP2 can be transferred to the substrate P, so that the panel PN2 can be formed on the substrate P.

以下,雖未圖示,但同樣地,為了於基板P上形成面板PN3,進行藉由基板載置台驅動部PSTD使基板P沿X軸方向及Y軸方向移動之第4步進移動。接下來,以使規定藉由投影光學模組PL10而產生之投影區域5010之遮光板30移動至第1傾斜配置,並且於+Y軸側形成曝光光之光路之方式使遮光板30移動。於該狀態下進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之A2區域之圖案形成於基板P之第5掃描曝光。繼而,進行藉由基板載置台驅動部PSTD使基板P沿Y軸方向移動之第5步進移動。接下來,以使規定藉由投影光學模組PL7而產生之投影區域507之遮光板30移動至第2傾斜配置,並且於-Y軸側形成曝光光之光路之方式使遮光板30移動。此時,於基板P上之各面板區域,於與A2區域對應之轉印圖案和與B2區域對應之轉印圖案之間形成有連接部。以於該連接部曝光量變得均勻之方式進行遮光板30及擋板裝置60之定位。其後,進行藉由使遮罩M與基板P沿X軸方向相對移動,而將遮罩圖案中之B2區域之圖案形成於基板P之第6掃描曝光。藉此,可將遮罩圖案MP3轉印至基板P,從而可於基板P形成面板PN3。藉由以上,可於基板P上形成面板PN1、面板PN2、面板PN3。 Although not shown in the figure, similarly, in order to form the panel PN3 on the substrate P, the substrate P is moved in the X-axis direction and the Y-axis direction by the substrate mounting table driving unit PSTD in the fourth step movement. Next, the light-shielding plate 30 defining the projection area 50 10 generated by the projection optical module PL 10 is moved to the first tilted position, and the light-shielding plate 30 is moved so as to form an optical path of the exposure light on the +Y-axis side. . In this state, the fifth scanning exposure is performed by relatively moving the mask M and the substrate P along the X-axis direction to form the pattern of the A2 area in the mask pattern on the substrate P. Next, the fifth step movement is performed in which the substrate P is moved in the Y-axis direction by the substrate mounting table driving unit PSTD. Next, the light-shielding plate 30 defining the projection area 50 7 generated by the projection optical module PL 7 is moved to the second tilted position, and the light-shielding plate 30 is moved so as to form an optical path of the exposure light on the -Y-axis side. . At this time, in each panel area on the substrate P, a connection portion is formed between the transfer pattern corresponding to the A2 area and the transfer pattern corresponding to the B2 area. The light shielding plate 30 and the baffle device 60 are positioned so that the exposure amount becomes uniform at the connection portion. Thereafter, the sixth scanning exposure is performed by relatively moving the mask M and the substrate P along the X-axis direction to form the pattern of the B2 area in the mask pattern on the substrate P. Thereby, the mask pattern MP3 can be transferred to the substrate P, so that the panel PN3 can be formed on the substrate P. Through the above, the panel PN1, the panel PN2, and the panel PN3 can be formed on the substrate P.

再者,上述第1~第5曝光方法為一例,並且除該等以外,於曝光裝置EX中進行之接合曝光亦想到各種態樣。因此,必須對應於所要求之面板之尺寸,每次設計如何將遮罩圖案分割成複數個區域並進行接合曝光。 In addition, the above-mentioned first to fifth exposure methods are examples, and in addition to these, various aspects of joint exposure performed in the exposure device EX are also conceivable. Therefore, it is necessary to design how to divide the mask pattern into multiple areas and conduct joint exposure each time according to the required panel size.

但是,遮罩圖案之分割部位之設計存在各種制約。即,於曝光裝置EX中,遮罩載置台MST(遮罩M)與各投影光學系統模組之步進(Y軸)方向之相對位置不變,因此關於各轉印圖案之Y軸方向之長度,藉由各投影光學系 統模組而形成之投影區域之長度之整數倍成為基礎,且利用遮光板30調整其合計長度。相對於此,具有遮光板30之投影光學模組僅為一部分(於本實施形態中為投影光學系統模組PLf),於設計投影區域之Y軸方向之合計長度之方面成為制約。又,於面板之製造步驟中,於各面板,與形成有重複圖案之液晶顯示面分開地形成有用以於周邊部將各面板與驅動電路連接之引出線(被稱為引板區域)。形成於該引板區域之引出線並非重複之圖案,因此成為進行接合曝光時之制約。又,就產能之觀點而言,接合曝光之次數較佳為較少,該點亦成為將遮罩圖案分割成複數個區域時之制約。又,遮罩尺寸亦因遮罩載置台MST之大小而存在物理性之限制,因此該點亦成為將遮罩圖案分割成複數個區域時之制約。 However, there are various restrictions on the design of the divided parts of the mask pattern. That is, in the exposure device EX, the relative position of the mask mounting table MST (mask M) and the step (Y-axis) direction of each projection optical system module does not change, so with respect to the Y-axis direction of each transfer pattern length, through each projection optical system The integral multiple of the length of the projection area formed by the system module is used as the basis, and the total length is adjusted by using the light shielding plate 30 . On the other hand, the projection optical module including the light shielding plate 30 is only a part (in this embodiment, the projection optical system module PLf), which is a restriction in designing the total length of the projection area in the Y-axis direction. In addition, in the panel manufacturing step, lead lines (referred to as lead plate areas) for connecting each panel to the drive circuit are formed in the peripheral portion of each panel separately from the liquid crystal display surface on which the repeating pattern is formed. The lead lines formed in the lead plate area are not repeating patterns, so this becomes a constraint during bonding exposure. In addition, from the viewpoint of throughput, the number of splicing exposures is preferably small, which also becomes a restriction when dividing the mask pattern into a plurality of areas. In addition, the mask size is also physically limited by the size of the mask stage MST. Therefore, this point also becomes a restriction when dividing the mask pattern into a plurality of areas.

相對於此,於本實施形態之曝光裝置EX中,於藉由由上述視場光闌20、遮光板30、驅動機構80、及擋板裝置60構成之可變光闌裝置進行接合曝光時,可藉由使用遮光板30之上述第1~第4模式之任一模式任意地調整形成連接部之一對投影區域中之一投影區域(於本實施形態中為投影區域50f)之長度及端部形狀。因此,利用接合曝光製造製品時之設計(使用接合曝光將形成於遮罩上之電路圖案之哪個部分形成於玻璃基板上,或實施有該接合曝光處理之電路圖案上之位置或進而將大小互不相同之多種電路圖案曝光至玻璃基板上時所使用之遮罩上之該多種電路圖案之配置等)之自由度提高,從而可緩和上述各種制約。若列舉一例,假設於將遮光板30之傾斜方向設為固定之情形時,若以可形成如圖4(a)或者圖4(c)所示之梯形狀之開口K之方式配置遮光板30,則無法如圖4(b)或者圖4(d)所示般形成平行四邊形狀及狹縫狀之開口K(遮光板30之斜邊與形成開口K之端部(斜邊)交叉),因此成為設計上之制約,於本實施形態中,上述設計之自由度提高。 On the other hand, in the exposure apparatus EX of this embodiment, when joint exposure is performed using the variable diaphragm device composed of the above-mentioned field diaphragm 20, light shielding plate 30, drive mechanism 80, and shutter device 60, The length and end of one of the pair of projection areas forming the connection portion (in this embodiment, the projection area 50f) can be arbitrarily adjusted by using any of the first to fourth modes of the light shielding plate 30. part shape. Therefore, the design when manufacturing products using bonding exposure (which part of the circuit pattern formed on the mask is formed on the glass substrate using bonding exposure, or the position on the circuit pattern where the bonding exposure process is performed, or the size of The degree of freedom in the arrangement of the various circuit patterns on the mask used when exposing the different circuit patterns to the glass substrate is increased, thereby alleviating the above various constraints. As an example, assuming that the inclination direction of the light shielding plate 30 is fixed, if the light shielding plate 30 is arranged in such a manner that a trapezoidal opening K can be formed as shown in Figure 4(a) or Figure 4(c) , then it is impossible to form the parallelogram-shaped and slit-shaped opening K as shown in Figure 4(b) or Figure 4(d) (the hypotenuse of the light shielding plate 30 intersects with the end (hypotenuse) forming the opening K), Therefore, it becomes a design restriction, and in this embodiment, the degree of freedom of the above-mentioned design is improved.

於使用本實施形態之曝光裝置EX進行接合曝光時,根據所要求之製品之設計(參照上述第1曝光方法~第5曝光方法)決定遮光板30之位置及 傾斜度(上述第1~第4模式之任一者)。例如,如圖20所示,於步驟S10中,根據面板(製品)尺寸、遮罩尺寸、引板區域之寬度(位置)、遮光板30之位置(於本實施形態中為與投影區域50f對應之位置)、最佳之掃描曝光之次數等各條件,於遮罩M上設定複數個區域(上述第1曝光方法之A及B區域、第3曝光方法之A~C區域等)。又,於步驟S12中,決定與於上述步驟S10中決定之遮罩M上之區域之Y軸方向之長度對應之遮光板30之Y軸方向之位置。 When the exposure device EX of this embodiment is used for joint exposure, the position and position of the light shielding plate 30 are determined according to the design of the required product (refer to the first to fifth exposure methods mentioned above). Inclination (any one of the 1st to 4th modes above). For example, as shown in FIG. 20 , in step S10 , based on the size of the panel (product), the mask size, the width (position) of the lead plate area, and the position of the light shielding plate 30 (corresponding to the projection area 50f in this embodiment) position), the optimal number of scanning exposures, and other conditions, set multiple areas on the mask M (areas A and B for the first exposure method mentioned above, areas A~C for the third exposure method, etc.). Furthermore, in step S12, the position of the light shielding plate 30 in the Y-axis direction corresponding to the Y-axis direction length of the area on the mask M determined in the above-mentioned step S10 is determined.

接下來,於步驟S14中判定步驟S12中所決定之遮光板30之位置是否滿足所需之接合曝光之條件。例如,判定於以現狀之遮光板30之傾斜方向進行接合曝光之情形時,形成於基板P上之連接部MC(參照圖10)之總曝光量是否滿足所需之曝光條件。於在步驟S14之判定中判定為Yes之情形時,進入步驟S16,並進行接合曝光。又,於在步驟S14中判定為No之情形時,進入步驟S18,並於將遮光板30之模式切換(第1模式與第2模式之切換或第3模式與第4模式之切換)追加至接合曝光之步驟後(實際上係於基板P之Y步進動作中進行遮光板30之模式切換),進入步驟S16,並進行接合曝光。 Next, in step S14, it is determined whether the position of the light shielding plate 30 determined in step S12 meets the required joint exposure conditions. For example, it is determined whether the total exposure amount of the connection portion MC (see FIG. 10 ) formed on the substrate P satisfies the required exposure conditions when joint exposure is performed in the tilt direction of the existing light shielding plate 30 . When the determination in step S14 is Yes, the process proceeds to step S16 and joint exposure is performed. Moreover, when it is determined as No in step S14, the process proceeds to step S18, and the mode switching of the light shielding plate 30 (switching between the first mode and the second mode or the switching between the third mode and the fourth mode) is added to After the joint exposure step (actually, the mode switching of the light shielding plate 30 is performed during the Y step movement of the substrate P), step S16 is entered, and the joint exposure is performed.

再者,若預先鑒於面板(製品)尺寸、遮罩尺寸、引板區域之寬度(位置)、掃描曝光之次數等得知進行接合曝光時之曝光條件,則亦可於第1掃描曝光與第2掃描曝光中切換遮光板30之位置。藉此,可省略上述步驟(步驟S14、S18),因此可使曝光處理簡單化。 Furthermore, if the exposure conditions for joint exposure are known in advance based on the panel (product) size, mask size, width (position) of the lead plate area, number of scan exposures, etc., then the first scan exposure and the second scan exposure can also be performed. 2. Switch the position of the light shield 30 during scanning exposure. Thereby, the above steps (steps S14 and S18) can be omitted, so the exposure process can be simplified.

如以上說明所述,於本實施形態中,藉由形成開口K之於Y軸方向上隔開之一對邊緣中之一者(+y側或-Y側)與遮光板30之在Y軸方向之一對邊緣中之一者(+Y側或-Y側)於遮光板30之一側或另一側(+Y側或-Y側)形成曝光光之光路,且藉由通過該光路之曝光光於基板P上產生俯視下為梯形或平行四邊形之投影區域50f。並且,上述俯視下為梯形或平行四邊形之投影區域50f之在Y軸方向之寬度可根據遮光板30之Y位置適當設定變更。 As described above, in this embodiment, the opening K is formed by forming one of a pair of edges (+y side or -Y side) spaced apart in the Y-axis direction and the light shielding plate 30 in the Y-axis direction. One of a pair of edges in the direction (+Y side or -Y side) forms an optical path of the exposure light on one side or the other side (+Y side or -Y side) of the light shielding plate 30, and by passing through the optical path The exposure light generates a projection area 50f that is a trapezoid or a parallelogram in plan view on the substrate P. Furthermore, the width in the Y-axis direction of the projection area 50f, which is a trapezoid or a parallelogram in plan view, can be appropriately set and changed according to the Y position of the light shielding plate 30.

如此一來,藉由切換遮光板30之模式,可使投影區域50f之位置及形狀變化,因此可任意地設定包含投影區域50f之藉由複數個投影光學模組形成於基板P上之投影區域之Y軸方向之長度及其端部形狀(傾斜方向)。因此,藉由接合曝光形成於基板P上之轉印圖案MPA或MPB(參照圖10)之寬度之設計之自由度提高,從而可於1片素玻璃基板上形成任意寬度之液晶面板。 In this way, by switching the mode of the light shielding plate 30, the position and shape of the projection area 50f can be changed. Therefore, the projection area formed on the substrate P by a plurality of projection optical modules including the projection area 50f can be arbitrarily set. The length in the Y-axis direction and its end shape (inclined direction). Therefore, the degree of freedom in designing the width of the transfer pattern MPA or MPB (see FIG. 10 ) formed on the substrate P by joint exposure is increased, so that a liquid crystal panel of any width can be formed on a single plain glass substrate.

再者,以上所說明之一實施形態之構成為一例,可適當變更。即,於上述實施形態中,遮光板30(可變視場光闌裝置)僅設置有1個,但並不限定於此,亦可設置複數個。又,設置有遮光板30(可變視場光闌裝置)之投影光學模組之數量及位置並無特別限定。於此情形時,藉由接合曝光形成於基板P上之轉印圖案MPA或MPB(參照圖10)之寬度之設計之自由度進一步提高。 In addition, the structure of one embodiment described above is an example and can be changed suitably. That is, in the above embodiment, only one light shielding plate 30 (variable field diaphragm device) is provided, but the invention is not limited to this, and a plurality of light shielding plates 30 (variable field diaphragm devices) may be provided. In addition, the number and position of the projection optical modules provided with the light shielding plate 30 (variable field diaphragm device) are not particularly limited. In this case, the degree of freedom in designing the width of the transfer pattern MPA or MPB (see FIG. 10 ) formed on the substrate P by joint exposure is further improved.

又,用以驅動遮光板30之機構亦可適當變更。即,亦可如圖21所示之變形例般,相對於1個開口K(視場光闌20(參照圖3))設置2片遮光板30。用以獨立地驅動2片遮光板30之驅動機構80A與上述實施形態同樣地,具有一對致動器82A、84A,且於該一對致動器82A、84A各自之螺母82c、84c固定有遮光板30。於上述實施形態中,藉由旋轉驅動1片遮光板30而變更其角度,但於本變形例中,以2片遮光板30各自之端部與形成開口K之於Y軸方向上隔開之一對邊緣平行之方式預先設定安裝角度,並將視場光闌20之一對端部之任一者與2片遮光板30之合計4個端部之任一者進行組合,藉此可與上述實施形態同樣地實現第1~第4模式。再者,圖21係模式圖,於圖25中示出本變形例之詳細內容。於圖25所示之驅動機構中,各遮光板30係沿著沿Y軸方向延伸之一對支臂88於既定之可動範圍(參照圖25之虛線箭頭)內獨立地往返驅動。此種往返驅動支臂88之類型之驅動機構亦可用作上述實施形態之遮光板30之驅動機構。 In addition, the mechanism for driving the light shielding plate 30 can also be appropriately changed. That is, as in the modification shown in FIG. 21 , two light shielding plates 30 may be provided for one opening K (field diaphragm 20 (see FIG. 3 )). The driving mechanism 80A for independently driving the two light shielding plates 30 has a pair of actuators 82A and 84A, and is fixed to the respective nuts 82c and 84c of the pair of actuators 82A and 84A. Shade 30. In the above embodiment, the angle of one light shielding plate 30 is changed by rotationally driving it. However, in this modification, the ends of the two light shielding plates 30 are spaced apart from each other in the Y-axis direction to form the opening K. The installation angle is preset so that a pair of edges are parallel, and any one of the pair of ends of the field diaphragm 20 is combined with any one of the total four ends of the two light shielding plates 30, so that it can be combined with The above embodiment implements the first to fourth modes in the same manner. In addition, FIG. 21 is a schematic diagram, and FIG. 25 shows the details of this modification. In the driving mechanism shown in FIG. 25 , each light shielding plate 30 is independently driven back and forth within a predetermined movable range (refer to the dotted arrow in FIG. 25 ) along a pair of arms 88 extending along the Y-axis direction. This type of driving mechanism that reciprocates the arm 88 can also be used as the driving mechanism of the light shielding plate 30 in the above embodiment.

又,亦可如圖22所示之變形例之驅動機構80B般,使致動器84B之螺母84c具有用以旋轉驅動遮光板30之旋轉馬達84d。旋轉馬達84d旋轉驅動遮 光板30,並使之抵接於固定於螺母84c之一對擋塊84e,藉此進行遮光板30之定位。上述實施形態之驅動機構80(參照圖4(a)等)具有一對線性致動器,相對於此,於本變形例中,可僅具有1個線性致動器,從而構成簡單。 Moreover, like the driving mechanism 80B of the modified example shown in FIG. 22, the nut 84c of the actuator 84B may be provided with a rotation motor 84d for rotationally driving the light shielding plate 30. Rotary motor 84d rotary drive shield The light plate 30 is abutted against a pair of stoppers 84e fixed to the nuts 84c, thereby positioning the light shielding plate 30. The drive mechanism 80 (see FIG. 4(a) and the like) of the above-mentioned embodiment has a pair of linear actuators. However, in this modification, only one linear actuator can be provided, thereby simplifying the structure.

又,亦可如圖23(a)所示之變形例之驅動機構80C般,經由軸84f將遮光板30支持為相對於致動器84C之螺母84c旋轉自如。驅動機構80C具有相對於開口K之位置固定之一對接腳84h,藉由於使遮光板30抵接於該一對接腳84h之一者之狀態下使螺母84c沿Y軸方向移動,藉此使遮光板30旋轉(參照圖23(b))。又,螺母84c具有將遮光板30擠壓於一對擋塊84e之任一者之板簧84g,遮光板30始終保持抵接於一對擋塊84e之任一者之狀態。於本變形例中,無需旋轉驅動遮光板30之致動器,而驅動機構80C之構成簡單。 Moreover, like the driving mechanism 80C of the modified example shown in FIG. 23(a), the light shielding plate 30 may be rotatably supported with respect to the nut 84c of the actuator 84C via the shaft 84f. The driving mechanism 80C has a pair of butt legs 84h fixed in position relative to the opening K. The nut 84c is moved in the Y-axis direction while the light shielding plate 30 is in contact with one of the pair of legs 84h, thereby shielding the light. The plate 30 rotates (refer to Fig. 23(b)). Furthermore, the nut 84c has a leaf spring 84g that presses the light shielding plate 30 against one of the pair of stoppers 84e, so that the light shielding plate 30 is always kept in contact with any one of the pair of stoppers 84e. In this modification, there is no need for an actuator to rotate the light shielding plate 30 , and the structure of the driving mechanism 80C is simple.

又,上述實施形態之遮光板30形成為俯視下為矩形(長方形),且藉由旋轉變更角度,但遮光板之形狀並不限定於此。即,亦可如圖24(a)所示之變形例之遮光板130般形成為朝+X側開口之俯視下U字狀(倒C字狀)。遮光板130係由沿Y軸方向延伸之板狀構件構成,且+Y側之端部與形成視場光闌20(參照圖3)之開口K之端部中之+Y側之端部平行地形成。又,遮光板130之-Y側之端部與形成視場光闌20之開口K之端部中之-Y側之端部平行地形成。又,遮光板130之形成朝+X側開口之缺口132之於Y軸方向上隔開之一對端部中之+Y側之端部與形成視場光闌20之開口K之端部中之+Y側之端部平行(即與遮光板130之+Y側之端部平行)地形成。又,形成缺口132之於Y軸方向上隔開之一對端部中之-Y側之端部與形成視場光闌20之開口K之端部中之-Y側之端部平行(即與遮光板130之-Y側之端部平行)地形成。 Furthermore, the light shielding plate 30 in the above embodiment is formed into a rectangular shape (rectangle) in plan view, and the angle is changed by rotation, but the shape of the light shielding plate is not limited to this. That is, the light shielding plate 130 of the modified example shown in FIG. 24(a) may be formed into a U-shape (inverted C-shape) in plan view, opening toward the +X side. The light shielding plate 130 is composed of a plate-shaped member extending in the Y-axis direction, and the end on the +Y side is parallel to the end on the +Y side of the ends of the opening K forming the field diaphragm 20 (see FIG. 3 ). ground formation. In addition, the -Y side end of the light shielding plate 130 is formed in parallel with the -Y side end of the ends forming the opening K of the field diaphragm 20 . In addition, the notch 132 forming the opening toward the +X side of the light shielding plate 130 is spaced in the Y-axis direction between the end on the +Y side and the end forming the opening K of the field diaphragm 20. The +Y side end of the light shielding plate 130 is formed parallel to the +Y side end of the light shielding plate 130 . In addition, the -Y side end of a pair of ends spaced apart in the Y-axis direction forming the notch 132 is parallel to the -Y side end of the ends forming the opening K of the field diaphragm 20 (i.e. is formed parallel to the -Y side end of the light shielding plate 130).

圖24(a)所示之變形例之遮光板130係藉由致動器86而沿Y軸方向被驅動。藉此,如圖24(b)~圖24(e)所示,可與上述實施形態同樣地實現第1~第4模式。再者,與上述實施形態同樣地,開口K中之未形成曝光光之光 路之部分係藉由可動之擋板裝置60而被遮光。根據本變形例,可僅藉由利用1個致動器86直進驅動遮光板130而實現第1~第4模式,因此構成簡單。 The light shielding plate 130 of the modified example shown in FIG. 24(a) is driven in the Y-axis direction by the actuator 86. Thereby, as shown in FIGS. 24(b) to 24(e) , the first to fourth modes can be realized in the same manner as the above-described embodiment. Furthermore, similarly to the above-mentioned embodiment, the light in the opening K that does not form the exposure light Part of the road is shielded from light by a movable baffle device 60 . According to this modification, the first to fourth modes can be realized by linearly driving the light shielding plate 130 using only one actuator 86, so the structure is simple.

又,於上述實施形態中,藉由視場光闌20與由板狀構件構成之遮光板30之協動而形成曝光光之光路(開口K),但與視場光闌20協動地形成曝光光之光路之構件並不限定於此。即,如圖26所示,亦可使用光學濾波器230a、230b對開口K之一部分進行遮光。光學濾波器230a係以光之透過率自+Y側之端部朝向-Y側降低之方式設定。光學濾波器230b構成為相對於光學濾波器230a紙面左右對稱。光學濾波器230a、230b可分別獨立地進行Y軸方向之驅動,且可任意地設定曝光光之遮光範圍及曝光光之光路之位置。根據本變形例,亦可進行與上述實施形態相同之接合曝光。再者,可以光學濾波器230a、230b中之形成遮光部(濾波器部)之微小之點不會轉印至基板P上之方式將光學濾波器230a、230b配置於自相對於遮罩M及基板P之共軛面沿光軸方向略微偏移後之位置。 Furthermore, in the above embodiment, the optical path (opening K) of the exposure light is formed by the cooperation of the field diaphragm 20 and the light shielding plate 30 composed of a plate-shaped member. However, the optical path (opening K) of the exposure light is formed in cooperation with the field diaphragm 20 . The components of the light path of the exposure light are not limited to this. That is, as shown in FIG. 26 , optical filters 230a and 230b may be used to shield part of the opening K from light. The optical filter 230a is set so that the light transmittance decreases from the end on the +Y side toward the -Y side. The optical filter 230b is configured to be bilaterally symmetrical with respect to the optical filter 230a. The optical filters 230a and 230b can be driven in the Y-axis direction independently, and the shielding range of the exposure light and the position of the optical path of the exposure light can be set arbitrarily. According to this modification, the same joint exposure as the above-mentioned embodiment can also be performed. Furthermore, the optical filters 230a and 230b can be arranged so that the minute dots forming the light shielding portions (filter portions) of the optical filters 230a and 230b are not transferred to the substrate P, so as to be arranged relative to the mask M and The position of the conjugate surface of the substrate P slightly shifted along the optical axis direction.

又,於上述實施形態(及其變形例)中,對將進給螺桿裝置用作驅動遮光板30之驅動機構之情形進行了說明,但驅動機構之構成並不限定於此。即,作為用以驅動遮光板30之致動器,亦可使用公知之軸馬達等。軸馬達可相對於一個定子獨立地驅動複數個可動子,因此適合如圖21所示之變形例般獨立地對一對遮光板30進行位置控制之類型。又,作為致動器,亦可使用如線性馬達之電磁馬達或者超音波馬達、如氣缸之機械致動器。 Furthermore, in the above-mentioned embodiment (and its modification), the case where the feed screw device is used as the driving mechanism for driving the light shielding plate 30 has been described, but the structure of the driving mechanism is not limited to this. That is, as the actuator for driving the light shielding plate 30, a known shaft motor or the like can also be used. The shaft motor can independently drive a plurality of movable elements with respect to one stator, and is therefore suitable for a type that independently controls the position of a pair of light shielding plates 30 as in the modification shown in FIG. 21 . Furthermore, as the actuator, an electromagnetic motor such as a linear motor or an ultrasonic motor, or a mechanical actuator such as a cylinder can also be used.

又,於圖21所示之變形例中,一對遮光板30分別係由獨立之致動器驅動,但致動器之一部分亦可共用。即,亦可為如將一對遮光板30載置於共用之第1載置台(粗動載置台)上,且於該第1載置台上載置有可獨立地控制一對遮光板30各自之位置之第2載置台(微動載置台)之構成。 Furthermore, in the modification shown in FIG. 21 , the pair of light shielding plates 30 are each driven by an independent actuator, but part of the actuator may be shared. That is, a pair of light shielding plates 30 may be placed on a common first mounting table (coarse motion mounting table), and a controller capable of independently controlling each of the pair of light shielding plates 30 may be placed on the first mounting table. The structure of the second mounting platform (micro-motion mounting platform).

又,用以驅動遮光板30之致動器於上述實施形態中係沿Y軸方向配置,但並不限定於此,亦可沿其他方向(X軸方向、Z軸方向等)配置。 In addition, the actuator for driving the light shielding plate 30 is arranged along the Y-axis direction in the above embodiment, but it is not limited to this and may also be arranged along other directions (X-axis direction, Z-axis direction, etc.).

又,遮光板30及其驅動機構80係用以規定產生於基板P上之投影區域(曝光區域)而設置,但並不限定於此,亦可於照明光學系統IL之擋板裝置設置與上述實施形態相同之構成之遮光板及其驅動機構。 In addition, the light shielding plate 30 and its driving mechanism 80 are provided to define the projection area (exposure area) generated on the substrate P, but are not limited to this, and may also be provided in the baffle device of the illumination optical system IL as described above. A light shielding plate and its driving mechanism having the same structure are implemented.

又,遮光板30設置於構成投影光學系統PL之投影光學模組,但只要於曝光光EL之光路上,則配置位置並無特別限定,亦可設置於照明光學系統IL等。 In addition, the light shielding plate 30 is provided in the projection optical module constituting the projection optical system PL. However, as long as it is on the optical path of the exposure light EL, the placement position is not particularly limited, and it may also be provided in the illumination optical system IL or the like.

又,於上述實施形態中,遮光板30及其驅動機構80係構成曝光裝置EX之一部分之裝置,但並不限定於此,亦可將遮光板30及驅動機構80(包含驅動器等軟體)作為遮光裝置(可變視場光闌裝置)追加地設置於已有之曝光裝置。 Furthermore, in the above embodiment, the light shielding plate 30 and the driving mechanism 80 constitute a part of the exposure apparatus EX, but the invention is not limited to this. The light shielding plate 30 and the driving mechanism 80 (including software such as a driver) may also be used as a device. A light shielding device (variable field diaphragm device) is additionally provided to the existing exposure device.

又,於上述實施形態中,係藉由包含遮光板30之可変視場光闌裝置變更形成於基板P上之投影區域之位置及形狀,但並不限定於此,亦可將遮罩M與投影光學系統PL構成為可沿Y軸方向相對移動,並藉由該遮罩M與投影光學系統PL之向Y軸方向之相對移動而變更投影區域之位置及形狀。 Furthermore, in the above embodiment, the position and shape of the projection area formed on the substrate P are changed by the variable field diaphragm device including the light shielding plate 30, but the invention is not limited to this, and the mask M and The projection optical system PL is configured to be relatively movable in the Y-axis direction, and the position and shape of the projection area are changed by the relative movement of the mask M and the projection optical system PL in the Y-axis direction.

又,照明光亦可為ArF準分子雷射光(波長193nm)、KrF準分子雷射光(波長248nm)等紫外線光或F2雷射光(波長157nm)等真空紫外線光。又,作為照明光,例如亦可使用利用摻雜有例如鉺(或鉺與鐿之兩者)之光纖放大器將自DFB半導體雷射或光纖雷射振盪出之紅外區域或可見光區域之單一波長雷射光增幅,並使用非線性光學結晶波長轉換為紫外線光之諧波。又,亦可使用固體雷射(波長:355nm、266nm)等。 In addition, the illumination light may be ultraviolet light such as ArF excimer laser light (wavelength 193 nm), KrF excimer laser light (wavelength 248 nm), or vacuum ultraviolet light such as F 2 laser light (wavelength 157 nm). Furthermore, as the illumination light, for example, a single wavelength laser in the infrared region or visible light region oscillated from a DFB semiconductor laser or fiber laser can be used using a fiber amplifier doped with erbium (or both erbium and ytterbium). The incident light is amplified and the wavelength is converted into harmonics of ultraviolet light using nonlinear optical crystals. In addition, solid laser (wavelength: 355nm, 266nm), etc. can also be used.

又,對投影光學系統PL係具備複數個投影光學模組之多透鏡方式之投影光學系統之情形進行了說明,但投影光學模組之個數並不限定於此,只要為1個以上即可。又,作為投影光學系統PL,亦可為擴大系統或縮小系統。 Furthermore, the case where the projection optical system PL is a multi-lens type projection optical system including a plurality of projection optical modules has been described. However, the number of projection optical modules is not limited to this, as long as it is one or more. . In addition, the projection optical system PL may be an expansion system or a reduction system.

又,作為曝光裝置之用途,並不限定於將液晶顯示元件圖案轉印 至方型之玻璃板之液晶用之曝光裝置,例如亦可廣泛地應用於有機EL(Electro--Luminescence,電致發光)面板製造用之曝光裝置、半導體製造用之曝光裝置、用以製造薄膜磁頭、微機械及DNA晶片等之曝光裝置。又,亦可應用於為了製造不僅是半導體元件等微型元件,此外光曝光裝置、EUV曝光裝置、X射線曝光裝置、及電子束曝光裝置等所使用之遮罩或光罩而將電路圖案轉印至玻璃基板或矽晶圓等之曝光裝置。 In addition, the use of the exposure device is not limited to transferring the liquid crystal display element pattern. Exposure equipment for liquid crystals with square glass plates, for example, can also be widely used in exposure equipment for organic EL (Electro-Luminescence, electroluminescence) panel manufacturing, exposure equipment for semiconductor manufacturing, and for manufacturing thin films. Exposure devices for magnetic heads, micromachines and DNA chips. In addition, it can also be applied to transfer circuit patterns to masks or photomasks used in manufacturing not only micro-components such as semiconductor components but also light exposure devices, EUV exposure devices, X-ray exposure devices, and electron beam exposure devices. Exposure equipment to glass substrates or silicon wafers.

又,成為曝光對象之物體並不限定於玻璃板,例如亦可為晶圓、陶瓷基板、膜構件或者空白光罩等其他物體。又,於曝光對象物為平板顯示器用之基板之情形時,該基板之厚度並無特別限定,例如包含膜狀(具有可撓性之片狀之構件)者。再者,本實施形態之曝光裝置於曝光對象物為一邊之長度或對角線長為500mm以上之基板之情形時尤其有效。 In addition, the object to be exposed is not limited to the glass plate, but may also be other objects such as a wafer, a ceramic substrate, a film member, or a blank mask. In addition, when the object to be exposed is a substrate for a flat panel display, the thickness of the substrate is not particularly limited, and may include, for example, film-like (flexible sheet-like members). Furthermore, the exposure device of this embodiment is particularly effective when the object to be exposed is a substrate with a length of one side or a diagonal length of 500 mm or more.

液晶顯示元件(或者半導體元件)等電子元件係經過進行元件之功能、性能設計之步驟、製作基於該設計步驟之遮罩(或者光罩)之步驟、製作玻璃基板(或者晶圓)之步驟、藉由上述各實施形態之曝光裝置及其曝光方法將遮罩(光罩)之圖案轉印至玻璃基板之微影步驟、使經曝光之玻璃基板顯影之顯影步驟、藉由蝕刻將殘存有抗蝕劑之部分以外之部分之露出構件去除之蝕刻步驟、將蝕刻結束後無用之抗蝕劑去除之抗蝕劑去除步驟、元件組裝步驟、檢查步驟等而製造。於此情形時,於微影步驟中,使用上述實施形態之曝光裝置執行上述曝光方法,而於玻璃基板上形成元件圖案,因此可生產性良好地製造高積體度之元件。 Electronic components such as liquid crystal display components (or semiconductor components) are processed through the steps of designing the function and performance of the component, the steps of manufacturing a mask (or photomask) based on the design steps, and the steps of manufacturing a glass substrate (or wafer). The exposure apparatus and the exposure method of each of the above embodiments are used to transfer the pattern of the mask (photomask) to the photolithography step of the glass substrate, the development step of developing the exposed glass substrate, and the etching to remove the remaining resist. It is manufactured by an etching step to remove exposed parts other than the etchant, a resist removal step to remove useless resist after etching, a component assembly step, and an inspection step. In this case, in the photolithography step, the exposure apparatus of the above embodiment is used to perform the above exposure method, and the device pattern is formed on the glass substrate. Therefore, high-density devices can be manufactured with good productivity.

[產業上之可利用性] [Industrial availability]

如以上說明所述,本發明之曝光方法適合將遮罩之圖案曝光至基板。又,本發明之平板顯示器之製造方法及元件製造方法分別適合製造平板顯示器及微型元件。又,本發明之遮光裝置及曝光裝置適合將遮罩之圖案曝光至 基板。 As described above, the exposure method of the present invention is suitable for exposing the pattern of the mask to the substrate. In addition, the manufacturing method of the flat panel display and the component manufacturing method of the present invention are suitable for manufacturing flat panel displays and micro components respectively. In addition, the light shielding device and the exposure device of the present invention are suitable for exposing the pattern of the mask to substrate.

30:遮光板 30: Shade

60:擋板裝置 60:Baffle device

A:區域 A:Region

B:區域 B:Area

M:遮罩 M: mask

MST:遮罩載置台 MST: Mask stage

P:基板 P:Substrate

PN1:面板 PN1:Panel

PN2:面板 PN2:Panel

PST:基板載置台 PST: Substrate mounting table

Claims (21)

一種曝光裝置,其係使物體相對於照明光沿掃描方向相對移動並曝光之曝光裝置,具備:視場光闌,其設置於投影光學系統,並形成用來設定上述照明光投影於上述物體上之投影區域的開口;遮光部,其與上述視場光闌獨立地設置於上述投影光學系統,並藉由對上述照明光的一部分進行遮光來變更上述投影區域的形狀;及驅動部,其驅動上述遮光部;上述驅動部根據上述視場光闌與上述遮光部的位置關係,以上述遮光部的角度平行於上述開口之與上述掃描方向正交的非掃描方向之一側或另一側的端邊的形狀之方式使上述遮光部旋轉,藉此以變更上述遮光部及上述開口的邊界的朝向之方式以使上述照明量變化之方式驅動上述遮光部。 An exposure device that moves an object relative to illumination light in a scanning direction and exposes it. It is provided with a field diaphragm, which is provided in a projection optical system and formed to set the illumination light to be projected onto the object. an opening of the projection area; a light-shielding portion that is provided in the projection optical system independently of the field diaphragm and changes the shape of the projection area by blocking a portion of the illumination light; and a driving portion that drives The above-mentioned light shielding part; the above-mentioned driving part, based on the positional relationship between the above-mentioned field diaphragm and the above-mentioned light shielding part, is parallel to one side or the other side of the non-scanning direction orthogonal to the above-mentioned scanning direction of the above-mentioned opening at an angle of the above-mentioned light-shielding part. The shape of the end edge causes the light-shielding portion to rotate, thereby changing the orientation of the boundary between the light-shielding portion and the opening to drive the light-shielding portion so as to change the amount of illumination. 如請求項1所述之曝光裝置,其中,上述驅動部係將與上述掃描方向正交之垂直方向作為軸,使上述遮光部旋轉。 The exposure apparatus according to claim 1, wherein the driving unit rotates the light shielding unit about a vertical direction orthogonal to the scanning direction as an axis. 如請求項2所述之曝光裝置,其中,上述驅動部係將上述垂直方向作為軸,而以切換上述遮光部相對於上述投影區域之角度之方式驅動上述遮光部。 The exposure device according to claim 2, wherein the driving unit uses the vertical direction as an axis to drive the light shielding part to switch an angle of the light shielding part with respect to the projection area. 如請求項1所述之曝光裝置,其中,上述驅動部將上述遮光部向上述非掃描方向驅動。 The exposure device according to claim 1, wherein the driving section drives the light shielding section in the non-scanning direction. 如請求項1所述之曝光裝置,其中,上述遮光部於上述非掃描方向對上述投影區域之端部進行遮光。 The exposure device according to claim 1, wherein the light shielding portion shields an end of the projection area in the non-scanning direction. 如請求項1所述之曝光裝置,其進一步具備:移動體,其保持上述物體且可移動;及控制部,其根據在上述非掃描方向之上述遮光部之位置,控制上述移動體 向上述非掃描方向之移動。 The exposure device according to claim 1, further comprising: a movable body that holds the object and is movable; and a control unit that controls the movable body based on the position of the light shielding portion in the non-scanning direction. Movement in the above non-scanning direction. 如請求項6所述之曝光裝置,其中,上述驅動部係當藉由上述控制部使上述移動體向上述非掃描方向移動時,將對上述投影區域之一端部進行遮光之上述遮光部以對另一端部進行遮光之方式驅動。 The exposure device according to claim 6, wherein the driving unit is the light shielding unit that shields one end of the projection area from light when the moving body is moved in the non-scanning direction by the control unit. The other end is driven in a light-shielding manner. 如請求項6所述之曝光裝置,其中,上述控制部係以於藉由上述投影光學系統投影有既定圖案中之第1圖案之上述物體上,投影一部分區域與上述第1圖案重合之第2圖案之方式,使上述移動體向上述非掃描方向移動。 The exposure device according to claim 6, wherein the control unit is configured to project a second pattern in which a part of the area overlaps with the first pattern on the object on which the first pattern among the predetermined patterns is projected by the projection optical system. In a pattern, the moving body is moved in the non-scanning direction. 如請求項8所述之曝光裝置,其中,上述遮光部對上述一部分區域進行遮光。 The exposure device according to claim 8, wherein the light shielding portion shields the partial area. 如請求項1所述之曝光裝置,其中,於上述掃描方向設置有複數個上述投影光學系統,上述遮光部設置於設置在上述掃描方向之不同位置的上述投影光學系統之各者。 The exposure device according to claim 1, wherein a plurality of the projection optical systems are provided in the scanning direction, and the light shielding portion is provided in each of the projection optical systems provided at different positions in the scanning direction. 如請求項10所述之曝光裝置,其中,設置於上述掃描方向之不同位置之上述投影光學系統,於上述非掃描方向,上述投影區域局部不同。 The exposure device according to claim 10, wherein the projection optical system is installed at different positions in the scanning direction, and the projection area is partially different in the non-scanning direction. 如請求項10所述之曝光裝置,其中,設置於上述掃描方向之複數個上述投影光學系統,對上述投影區域重合之既定區域進行照射。 The exposure device according to claim 10, wherein a plurality of the projection optical systems provided in the scanning direction illuminate a predetermined area where the projection areas overlap. 如請求項1至12中任一項所述之曝光裝置,其中,上述物體係用於製造平板顯示器之基板。 The exposure device according to any one of claims 1 to 12, wherein the object system is used to manufacture a substrate for a flat panel display. 如請求項13所述之曝光裝置,其中,上述基板之至少一邊之長度或對角線長為500mm以上。 The exposure device according to claim 13, wherein the length or diagonal length of at least one side of the substrate is 500 mm or more. 一種平板顯示器之製造方法,其包括:使用如請求項13所述之曝光裝置對上述基板進行曝光;及使經曝光之上述基板顯影。 A method of manufacturing a flat panel display, which includes: exposing the above-mentioned substrate using the exposure device according to claim 13; and developing the exposed above-mentioned substrate. 一種元件製造方法,其包括:使用如請求項13所述之曝光裝置對上述基板進行曝光;及使經曝光之上述基板顯影。 A device manufacturing method, which includes: exposing the above-mentioned substrate using the exposure device according to claim 13; and developing the exposed above-mentioned substrate. 一種投影光學模組,其係使物體相對於照明光沿掃描方向相對移動並曝光之曝光裝置的投影光學模組,具備:視場光闌,其設置於投影光學系統,並形成用來設定上述照明光投影於上述物體上之投影區域的開口;遮光部,其與上述視場光闌獨立地設置於上述投影光學系統,並藉由對上述照明光的一部分進行遮光來變更上述投影區域的形狀;及驅動部,其驅動上述遮光部;上述驅動部根據上述視場光闌與上述遮光部的位置關係,以上述遮光部的角度平行於上述開口的與上述掃描方向正交之非掃描方向之一側或另一側的端邊的形狀之方式使上述遮光部旋轉,藉此以變更上述遮光部及上述開口的邊界的朝向之方式驅動上述遮光部。 A projection optical module, which is a projection optical module of an exposure device that moves an object relative to illumination light in a scanning direction and exposes it. It is provided with: a field diaphragm, which is provided in the projection optical system and is formed to set the above-mentioned an opening of a projection area where illumination light is projected on the above-mentioned object; a light-shielding portion that is provided in the above-mentioned projection optical system independently of the above-mentioned field diaphragm and changes the shape of the above-mentioned projection area by blocking a part of the above-mentioned illumination light ; and a driving part that drives the light-shielding part; the driving part, based on the positional relationship between the field diaphragm and the light-shielding part, drives the non-scanning direction orthogonal to the scanning direction of the opening at an angle of the light-shielding part parallel to the opening. The light shielding part is rotated according to the shape of one or the other end edge, thereby driving the light shielding part in a manner to change the orientation of the boundary between the light shielding part and the opening. 如請求項17所述之投影光學模組,其中,上述驅動部係將與上述掃描方向正交之垂直方向作為軸,使上述遮光部旋轉。 The projection optical module according to claim 17, wherein the driving unit rotates the light shielding unit with a vertical direction orthogonal to the scanning direction as an axis. 如請求項18所述之投影光學模組,其中,上述驅動部係將上述垂直方向作為軸,而以切換上述遮光部相對於上述投影區域之角度之方式驅動上述遮光部。 The projection optical module according to claim 18, wherein the driving unit uses the vertical direction as an axis to drive the light shielding part in a manner to switch an angle of the light shielding part relative to the projection area. 如請求項17所述之投影光學模組,其中,上述驅動部將上述遮光部向上述非掃描方向驅動。 The projection optical module according to claim 17, wherein the driving part drives the light shielding part in the non-scanning direction. 如請求項17所述之投影光學模組,其中,上述遮光部於上述非掃描方向對上述投影區域之端部進行遮光。 The projection optical module according to claim 17, wherein the light shielding portion shields the end of the projection area in the non-scanning direction.
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