TWI813961B - Processing liquid temperature control method, substrate processing method, processing liquid temperature control apparatus, and substrate processing system - Google Patents
Processing liquid temperature control method, substrate processing method, processing liquid temperature control apparatus, and substrate processing system Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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Abstract
Description
本發明係關於一種處理液溫度調整方法、基板處理方法、處理液溫度調整裝置、及基板處理系統。The invention relates to a processing liquid temperature adjustment method, a substrate processing method, a processing liquid temperature adjustment device, and a substrate processing system.
專利文獻1中記載之基板處理裝置具備處理槽、獲取部、記憶部、特定部及控制部。The substrate processing apparatus described in Patent Document 1 includes a processing tank, an acquisition unit, a storage unit, a specific unit, and a control unit.
處理槽利用處理液對基板進行處理。獲取部預先獲取基板之處理資訊。記憶部記憶對應資訊，上述對應資訊係描述處理資訊可採取之複數種情況、及預先與複數種情況之每一種對應準備之複數個濃度變化圖案之資訊。特定部藉由參照對應資訊，而特定出與所獲取之基板之處理資訊對應之預測濃度變化圖案。於處理槽中對基板進行處理期間，控制部基於預測濃度變化圖案來控制處理液之濃度。The processing tank processes the substrate using the processing liquid. The acquisition unit acquires processing information of the substrate in advance. The memory unit stores corresponding information, which describes a plurality of situations in which the information can be processed, and a plurality of density change patterns prepared in advance corresponding to each of the plurality of situations. The specifying unit specifies the predicted density change pattern corresponding to the acquired processing information of the substrate by referring to the corresponding information. During processing of the substrate in the processing tank, the control unit controls the concentration of the processing liquid based on the predicted concentration change pattern.
其結果為，即便於伴隨基板處理出現之處理液中成分濃度之變化較大之情形時，亦能控制處理基板期間處理液之濃度。As a result, it is possible to control the concentration of the processing liquid while the substrate is being processed, even when the concentration of components in the processing liquid changes greatly due to substrate processing.
尤其是於專利文獻1中記載之積層基板中，於基板本體之上表面積層有複數層氧化膜及複數層多晶矽膜，進而形成有於其等之積層方向上貫通該等複數個層之孔。當將積層基板浸漬於蝕刻液(磷酸)時，蝕刻液進入孔中，自孔之內周面(側壁)選擇性蝕刻各多晶矽層，各多晶矽層自孔之內周面退後。積層於基板本體之膜之數量越多且孔越深，則孔之內周面與蝕刻液之接觸面積便會越大，故而每單位時間之蝕刻量越大。由於自基板溶出至蝕刻液中之矽之量與蝕刻量相關聯，故而當對積層數較多之積層基板進行蝕刻時，伴隨蝕刻出現之處理液中之變化成分(矽)之濃度變化大於對積層數較少之積層基板進行蝕刻時之變化。In particular, in the laminated substrate described in Patent Document 1, a plurality of oxide films and a plurality of polycrystalline silicon films are laminated on the upper surface of the substrate body, and holes penetrating the plurality of layers in the lamination direction are formed. When the laminated substrate is immersed in the etching liquid (phosphoric acid), the etching liquid enters the hole and selectively etches each polycrystalline silicon layer from the inner peripheral surface (side wall) of the hole, and each polycrystalline silicon layer retreats from the inner peripheral surface of the hole. The greater the number of films laminated on the substrate body and the deeper the holes, the larger the contact area between the inner peripheral surface of the holes and the etching liquid, and therefore the greater the etching amount per unit time. Since the amount of silicon eluted from the substrate into the etching solution is related to the amount of etching, when etching a multilayer substrate with a large number of layers, the concentration change of the component (silicon) in the processing solution that occurs with etching is greater than that of the etching amount. Changes when etching a multilayer substrate with a small number of layers.
於專利文獻1所記載之基板處理裝置中，控制部基於預測濃度變化圖案，對用於將貯存在備用槽之補充液補充至處理槽中之泵之驅動進行控制，自備用槽向處理槽補充處理液。其結果為，即便於處理液之濃度變化伴隨蝕刻量較大之積層基板之處理而較大的情形時，亦能維持對基板進行處理期間之處理液之濃度。 [先前技術文獻] [專利文獻]In the substrate processing apparatus described in Patent Document 1, the control unit controls the drive of the pump for replenishing the replenishing liquid stored in the backup tank to the processing tank based on the predicted concentration change pattern, from the backup tank to the processing tank. Replenish treatment fluid. As a result, even when the concentration of the processing liquid changes greatly as the laminated substrate with a large amount of etching is processed, the concentration of the processing liquid can be maintained while the substrate is being processed. [Prior technical documents] [Patent documents]
[專利文獻1]日本專利特開2018-164000號公報[Patent Document 1] Japanese Patent Application Publication No. 2018-164000
[發明所欲解決之問題][Problem to be solved by the invention]
然而，於專利文獻1所記載之基板處理裝置中，若基板進一步高積層化，則伴隨蝕刻出現之處理液中之變化成分(矽)之濃度變化便會更大。因此，必須自備用槽向處理槽補充大量濃度經調整之處理液。然而，於備用槽中，可能因來不及調整濃度，而無法將大量濃度經調整之處理液供給至處理槽中。However, in the substrate processing apparatus described in Patent Document 1, if the substrate is further laminated, the concentration change of the changing component (silicon) in the processing liquid caused by etching will become larger. Therefore, a large amount of treatment liquid with an adjusted concentration must be replenished from the standby tank to the treatment tank. However, in the standby tank, there may be no time to adjust the concentration, so a large amount of the treatment liquid with adjusted concentration cannot be supplied to the treatment tank.
本發明係鑒於上述課題而完成者，其目的在於提供一種能使用以處理基板之處理液之濃度快速達到目標值之處理液溫度調整方法、基板處理方法、處理液溫度調整裝置、及基板處理系統。 [解決問題之技術手段]The present invention was completed in view of the above problems, and its object is to provide a processing liquid temperature adjustment method, a substrate processing method, a processing liquid temperature adjustment device, and a substrate processing system that can quickly reach a target value using a concentration of a processing liquid used to process a substrate. . [Technical means to solve problems]
根據本發明之一態樣，處理液溫度調整方法包括以下步驟：將用以處理基板之處理液加熱至上述處理液之標準沸點以上；對貯存於第1貯存槽之上述處理液供給促進水分自上述加熱後之處理液中蒸發之氣體；及自上述第1貯存槽中排出水蒸氣及上述氣體。上述處理液係含有磷酸之液體。According to an aspect of the present invention, the method for adjusting the temperature of the processing liquid includes the following steps: heating the processing liquid used to process the substrate to above the standard boiling point of the processing liquid; supplying the processing liquid stored in the first storage tank to promote the naturalization of moisture. The gas evaporated from the above-mentioned heated treatment liquid; and the water vapor and the above-mentioned gas are discharged from the above-mentioned first storage tank. The above treatment liquid is a liquid containing phosphoric acid.
本發明之處理液溫度調整方法較佳為進而包括如下步驟：自上述第1貯存槽直接或間接地向處理上述基板之基板處理部供給上述處理液。The processing liquid temperature adjustment method of the present invention preferably further includes the step of directly or indirectly supplying the processing liquid from the first storage tank to the substrate processing unit that processes the substrate.
本發明之處理液溫度調整方法較佳為進而包括以下步驟：在貯存於上述第1貯存槽之上述處理液之濃度達到目標值之後，自上述第1貯存槽向第2貯存槽供給上述處理液；及對貯存於上述第2貯存槽之上述處理液之溫度進行調節，使上述處理液之濃度維持於上述目標值。較佳為於供給上述處理液之上述步驟中，自上述第2貯存槽向上述基板處理部供給上述處理液。The processing liquid temperature adjustment method of the present invention preferably further includes the following step: after the concentration of the processing liquid stored in the first storage tank reaches a target value, supplying the processing liquid from the first storage tank to the second storage tank. ; and adjust the temperature of the treatment liquid stored in the second storage tank to maintain the concentration of the treatment liquid at the target value. Preferably, in the step of supplying the processing liquid, the processing liquid is supplied from the second storage tank to the substrate processing unit.
於本發明之處理液溫度調整方法中，較佳為上述第1貯存槽係將上述基板浸漬於上述處理液中對上述基板進行處理之處理槽。較佳為將上述處理液加熱之上述步驟、及供給上述氣體之上述步驟係在未將上述基板浸漬於上述處理液之期間執行。In the processing liquid temperature adjustment method of the present invention, it is preferable that the first storage tank is a processing tank in which the substrate is immersed in the processing liquid and the substrate is processed. It is preferable that the steps of heating the processing liquid and supplying the gas are performed while the substrate is not immersed in the processing liquid.
於本發明之處理液溫度調整方法中，較佳為將上述處理液加熱之上述步驟、及供給上述氣體之上述步驟係在貯存於上述第1貯存槽之上述處理液之一部分或全部被排出，將上述處理液之一部分或全部替換成新的上述處理液之後執行。In the processing liquid temperature adjustment method of the present invention, it is preferable that the step of heating the processing liquid and the step of supplying the gas are performed after part or all of the processing liquid stored in the first storage tank is discharged. This is performed after replacing part or all of the above-mentioned treatment liquid with a new above-mentioned treatment liquid.
根據本發明之另一態樣，處理液溫度調整方法包括以下步驟：將用以處理基板之處理液加熱至上述處理液之標準沸點以上；對貯存於第1貯存槽之上述處理液供給促進水分自上述加熱後之處理液中蒸發之氣體；自上述第1貯存槽中排出水蒸氣及上述氣體；在貯存於上述第1貯存槽之上述處理液之濃度達到目標值之後，自上述第1貯存槽向第2貯存槽供給上述處理液；對貯存於上述第2貯存槽之上述處理液之溫度進行調節，使上述處理液之濃度維持於上述目標值；及自上述第2貯存槽向處理上述基板之基板處理部供給上述處理液。According to another aspect of the present invention, the processing liquid temperature adjustment method includes the following steps: heating the processing liquid used to process the substrate to above the standard boiling point of the above-mentioned processing liquid; and supplying promoting moisture to the above-mentioned processing liquid stored in the first storage tank. The gas evaporated from the above-mentioned heated treatment liquid; the water vapor and the above-mentioned gas are discharged from the above-mentioned first storage tank; after the concentration of the above-mentioned treatment liquid stored in the above-mentioned first storage tank reaches the target value, the gas is evaporated from the above-mentioned first storage tank The tank supplies the above-mentioned treatment liquid to the second storage tank; adjusts the temperature of the above-mentioned treatment liquid stored in the above-mentioned second storage tank to maintain the concentration of the above-mentioned treatment liquid at the above-mentioned target value; and processes the above-mentioned treatment liquid from the above-mentioned second storage tank. The above-mentioned processing liquid is supplied to the substrate processing section of the substrate.
根據本發明之又一態樣，基板處理方法包括上述處理液溫度調整方法、及利用處理液對基板進行處理之步驟。According to another aspect of the present invention, a substrate processing method includes the above-mentioned method for adjusting the temperature of a processing liquid, and a step of using the processing liquid to process the substrate.
根據本發明之又一態樣，處理液溫度調整裝置具備第1溫度調整部、第1貯存槽、氣體供給構件及排氣配管部。第1溫度調整部將用以處理基板之處理液加熱至上述處理液之標準沸點以上。第1貯存槽貯存利用上述第1溫度調整部加熱後之上述處理液。氣體供給構件對貯存於上述第1貯存槽之上述處理液供給促進水分自上述處理液中蒸發之氣體。排氣配管部自上述第1貯存槽中排出水蒸氣及上述氣體。上述處理液係含有磷酸之液體。According to another aspect of the present invention, a processing liquid temperature adjustment device includes a first temperature adjustment unit, a first storage tank, a gas supply member, and an exhaust piping unit. The first temperature adjustment unit heats the processing liquid used to process the substrate to a temperature higher than the standard boiling point of the processing liquid. The first storage tank stores the processing liquid heated by the first temperature adjustment unit. The gas supply member supplies a gas that promotes evaporation of water from the processing liquid stored in the first storage tank. The exhaust piping section discharges water vapor and the above-mentioned gas from the above-mentioned first storage tank. The above treatment liquid is a liquid containing phosphoric acid.
於本發明之處理液溫度調整裝置中，較佳為上述第1貯存槽向處理上述基板之基板處理部直接或間接地供給上述處理液。In the processing liquid temperature adjustment device of the present invention, it is preferable that the first storage tank directly or indirectly supplies the processing liquid to the substrate processing unit that processes the substrate.
本發明之處理液溫度調整裝置較佳為進而具備第2貯存槽及第2溫度調整部。較佳為第2貯存槽在貯存於上述第1貯存槽之上述處理液之濃度達到目標值之後，自上述第1貯存槽被供給上述處理液。較佳為第2溫度調整部對貯存於上述第2貯存槽之上述處理液之溫度進行調節，使上述處理液之濃度維持於上述目標值。較佳為上述第2貯存槽向上述基板處理部供給上述處理液。The processing liquid temperature adjustment device of the present invention preferably further includes a second storage tank and a second temperature adjustment unit. Preferably, the second storage tank is supplied with the processing liquid from the first storage tank after the concentration of the processing liquid stored in the first storage tank reaches a target value. Preferably, the second temperature adjustment unit adjusts the temperature of the processing liquid stored in the second storage tank so that the concentration of the processing liquid is maintained at the target value. Preferably, the second storage tank supplies the processing liquid to the substrate processing unit.
於本發明之處理液溫度調整裝置中，較佳為上述第1貯存槽係將上述基板浸漬於上述處理液中對上述基板進行處理之處理槽。較佳為上述第1溫度調整部在未將上述基板浸漬於上述處理液之期間，將上述處理液加熱至上述標準沸點以上。較佳為上述氣體供給構件在未將上述基板浸漬於上述處理液之上述期間，對貯存於上述第1貯存槽之上述處理液供給上述氣體。In the processing liquid temperature adjustment device of the present invention, it is preferable that the first storage tank is a processing tank in which the substrate is immersed in the processing liquid to process the substrate. Preferably, the first temperature adjustment unit heats the processing liquid to a temperature higher than the standard boiling point while the substrate is not immersed in the processing liquid. Preferably, the gas supply member supplies the gas to the processing liquid stored in the first storage tank during the period when the substrate is not immersed in the processing liquid.
於本發明之處理液溫度調整裝置中，較佳為在貯存於上述第1貯存槽之上述處理液之一部分或全部被排出，將上述處理液之一部分或全部替換成新的上述處理液之後，上述第1溫度調整部將上述處理液加熱至上述標準沸點以上。較佳為在貯存於上述第1貯存槽之上述處理液之一部分或全部被排出，將上述處理液之一部分或全部替換成新的上述處理液之後，上述氣體供給構件對貯存於上述第1貯存槽之上述處理液供給上述氣體。In the processing liquid temperature adjusting device of the present invention, it is preferable that after part or all of the processing liquid stored in the first storage tank is discharged and part or all of the processing liquid is replaced with a new processing liquid, The first temperature adjustment unit heats the treatment liquid to a temperature higher than the standard boiling point. Preferably, after a part or all of the processing liquid stored in the first storage tank is discharged and a part or all of the processing liquid is replaced with a new processing liquid, the gas supply member stores the gas in the first storage tank. The above treatment liquid in the tank supplies the above gas.
根據本發明之又一態樣，處理液溫度調整裝置具備第1溫度調整部、第1貯存槽、氣體供給構件、排氣配管部、第2貯存槽及第2溫度調整部。第1溫度調整部將用以處理基板之處理液加熱至上述處理液之標準沸點以上。第1貯存槽貯存利用上述第1溫度調整部加熱後之上述處理液。氣體供給構件對貯存於上述第1貯存槽之上述處理液供給促進水分自上述處理液中蒸發之氣體。排氣配管部自上述第1貯存槽中排出水蒸氣及上述氣體。第2貯存槽在貯存於上述第1貯存槽之上述處理液之濃度達到目標值之後，自上述第1貯存槽被供給上述處理液。第2溫度調整部對貯存於上述第2貯存槽之上述處理液之溫度進行調節，使上述處理液之濃度維持於上述目標值。上述第2貯存槽向處理上述基板之基板處理部供給上述處理液。According to another aspect of the present invention, a processing liquid temperature adjustment device includes a first temperature adjustment unit, a first storage tank, a gas supply member, an exhaust piping unit, a second storage tank, and a second temperature adjustment unit. The first temperature adjustment unit heats the processing liquid used to process the substrate to a temperature higher than the standard boiling point of the processing liquid. The first storage tank stores the processing liquid heated by the first temperature adjustment unit. The gas supply member supplies a gas that promotes evaporation of water from the processing liquid stored in the first storage tank. The exhaust piping section discharges water vapor and the above-mentioned gas from the above-mentioned first storage tank. After the concentration of the processing liquid stored in the first storage tank reaches a target value, the second storage tank is supplied with the processing liquid from the first storage tank. The second temperature adjustment unit adjusts the temperature of the processing liquid stored in the second storage tank to maintain the concentration of the processing liquid at the target value. The said second storage tank supplies the said processing liquid to the substrate processing part which processes the said substrate.
於本發明之處理液溫度調整裝置中，較佳為上述排氣配管部包含自上述第1貯存槽中排出上述水蒸氣及上述氣體之排氣配管。較佳為上述排氣配管之流路之截面面積滿足下式。 A×V≧Q A：上述排氣配管之上述流路之上述截面面積 V：當不執行將上述處理液加熱至上述標準沸點以上之處理及對上述處理液供給上述氣體之處理時，流經上述排氣配管之上述流路之排出氣體之流速 Q：上述水蒸氣及上述氣體之每單位時間之排氣量In the processing liquid temperature adjusting device of the present invention, it is preferable that the exhaust piping section includes an exhaust piping for exhausting the water vapor and the gas from the first storage tank. It is preferable that the cross-sectional area of the flow path of the exhaust pipe satisfies the following formula. A×V≧Q A: The cross-sectional area of the flow path of the exhaust pipe V: When the process of heating the above-mentioned treatment liquid to above the above-mentioned standard boiling point and the treatment of supplying the above-mentioned gas to the above-mentioned treatment liquid are not performed, the flow through The flow rate of the exhaust gas in the above-mentioned flow path of the above-mentioned exhaust piping Q: The exhaust volume per unit time of the above-mentioned water vapor and the above-mentioned gas
於本發明之處理液溫度調整裝置中，較佳為上述氣體供給構件之原材料為樹脂。In the processing liquid temperature adjusting device of the present invention, it is preferable that the raw material of the gas supply member is resin.
根據本發明之又一態樣，基板處理系統具備：上述處理液溫度調整裝置；及基板處理部，其利用處理液對基板進行處理。 [發明之效果]According to another aspect of the present invention, a substrate processing system includes: the above-mentioned processing liquid temperature adjustment device; and a substrate processing unit that processes the substrate using the processing liquid. [The effect of the invention]
根據本發明，能使用以處理基板之處理液之濃度快速達到目標值。According to the present invention, the concentration of the processing liquid used to process the substrate can quickly reach the target value.
以下，參照圖式對本發明之實施方式進行說明。再者，圖中對相同或相應之部分標註相同參照符號，不再重複說明。又，於本發明之實施方式中，X軸、Y軸及Z軸相互正交，X軸及Y軸與水平方向平行，Z軸與鉛直方向平行。Hereinafter, embodiments of the present invention will be described with reference to the drawings. Furthermore, the same or corresponding parts in the figures are marked with the same reference symbols, and repeated descriptions will not be repeated. Furthermore, in the embodiment of the present invention, the X-axis, the Y-axis and the Z-axis are orthogonal to each other, the X-axis and the Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.
(實施方式1) 參照圖1～圖4，對本發明之實施方式1之基板處理系統100及基板處理方法進行說明。首先，參照圖1對基板處理系統100進行說明。(Embodiment 1) Referring to FIGS. 1 to 4 , a substrate processing system 100 and a substrate processing method according to Embodiment 1 of the present invention will be described. First, the substrate processing system 100 will be described with reference to FIG. 1 .
圖1係表示本發明之實施方式1之基板處理系統100之模式圖。圖1所示之基板處理系統100為批次式。因此，基板處理系統100利用處理液LQ對複數個基板W一起進行處理。利用處理液LQ對複數個基板W進行蝕刻處理、表面處理、特性賦予、處理膜形成、膜之至少一部分之去除及洗淨中之至少1種。FIG. 1 is a schematic diagram showing a substrate processing system 100 according to Embodiment 1 of the present invention. The substrate processing system 100 shown in Figure 1 is of a batch type. Therefore, the substrate processing system 100 uses the processing liquid LQ to process a plurality of substrates W together. The plurality of substrates W are subjected to at least one of etching treatment, surface treatment, characteristic provision, treatment film formation, removal of at least a part of the film, and cleaning on the plurality of substrates W using the treatment liquid LQ.
處理液LQ例如為藉由沸騰使特定成分之濃度高於常溫時或室溫時之濃度而使用之液體(例如藥液)。藉由沸騰使特定成分之濃度高於常溫時或室溫時之濃度而使用之液體例如為含有磷酸的液體。於此情形時，「特定成分」為「磷酸」。The treatment liquid LQ is, for example, a liquid (such as a chemical liquid) used by boiling so that the concentration of a specific component is higher than that at normal temperature or room temperature. A liquid used to make the concentration of a specific component higher than that at normal or room temperature by boiling is, for example, a liquid containing phosphoric acid. In this case, the "specific ingredient" is "phosphoric acid".
含有磷酸之液體例如為磷酸之水溶液(以下，記為「磷酸水溶液」)、磷酸水溶液中含有添加劑之液體、含有磷酸之混酸、或含有磷酸及添加劑之混酸。The liquid containing phosphoric acid is, for example, an aqueous solution of phosphoric acid (hereinafter referred to as "aqueous phosphoric acid solution"), a liquid containing an additive in the aqueous phosphoric acid solution, a mixed acid containing phosphoric acid, or a mixed acid containing phosphoric acid and an additive.
基板W例如為半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、場發射顯示器(Field Emission Display：FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、或太陽電池用基板。The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (Field Emission Display: FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, or a photomask Substrate, ceramic substrate, or substrate for solar cells.
作為基板W之半導體晶圓例如具有用於形成三維快閃記憶體(例如三維NAND(Not AND，反及)快閃記憶體)之表面圖案。例如表面圖案具有包含1個以上凹部(例如溝槽或孔)之構造，且該構造係氧化矽膜與氮化矽膜交替積層而成，或氧化矽膜與多晶矽膜交替積層而成。於此情形時，利用處理液LQ選擇性蝕刻於表面圖案之凹部之側面露出之氮化矽膜或多晶矽膜。於此情形時，例如使用含有磷酸之液體作為處理液LQ。The semiconductor wafer serving as the substrate W has, for example, a surface pattern for forming a three-dimensional flash memory (eg, a three-dimensional NAND (Not AND) flash memory). For example, the surface pattern has a structure including one or more recessed portions (such as trenches or holes), and the structure is formed by alternately stacking silicon oxide films and silicon nitride films, or alternately stacking silicon oxide films and polycrystalline silicon films. In this case, the processing liquid LQ is used to selectively etch the silicon nitride film or polycrystalline silicon film exposed on the side of the concave portion of the surface pattern. In this case, for example, a liquid containing phosphoric acid is used as the treatment liquid LQ.
如圖1所示，基板處理系統100包含處理裝置U1、處理液溫度調整裝置U2、冷卻槽群U3、控制裝置U4及配管P1。控制裝置U4控制處理裝置U1及處理液溫度調整裝置U2。控制裝置U4例如為電腦。詳細而言，控制裝置U4包含處理器及記憶裝置。處理器例如包括CPU(Central Processing Unit，中央處理單元)。記憶裝置記憶資料及電腦程式。記憶裝置例如包含主記憶裝置及輔助記憶裝置。主記憶裝置例如包括半導體記憶器。輔助記憶裝置例如包括半導體記憶器、固態硬碟及/或硬碟。輔助記憶裝置例如亦可包括可移媒體。As shown in FIG. 1 , the substrate processing system 100 includes a processing device U1, a processing liquid temperature adjustment device U2, a cooling tank group U3, a control device U4, and a pipe P1. The control device U4 controls the processing device U1 and the processing liquid temperature adjustment device U2. The control device U4 is, for example, a computer. In detail, the control device U4 includes a processor and a memory device. The processor includes, for example, a CPU (Central Processing Unit). Memory devices store data and computer programs. The memory device includes, for example, a main memory device and an auxiliary memory device. The main memory device includes, for example, a semiconductor memory. Auxiliary memory devices include, for example, semiconductor memories, solid state drives, and/or hard drives. The auxiliary memory device may also include removable media, for example.
處理裝置U1包含複數個基板處理部1、複數個冷卻槽5、複數個閥9、複數個閥11及複數個配管P2。複數個冷卻槽5分別與複數個基板處理部1對應配置。The processing device U1 includes a plurality of substrate processing units 1, a plurality of cooling tanks 5, a plurality of valves 9, a plurality of valves 11, and a plurality of pipes P2. The plurality of cooling tanks 5 are respectively arranged corresponding to the plurality of substrate processing units 1 .
複數個基板處理部1各自利用處理液LQ對基板W進行處理。具體而言，複數個基板處理部1分別為批次式，利用處理液LQ對複數個基板W一起進行處理。複數個基板處理部1各自包含處理槽3。各處理槽3貯存處理液LQ。又，各處理槽3收容複數個基板W。於各處理槽3之處理液LQ中浸漬複數個基板W。其結果為，於各處理槽3中，利用處理液LQ對複數個基板W進行處理。Each of the plurality of substrate processing units 1 processes the substrate W using the processing liquid LQ. Specifically, each of the plurality of substrate processing units 1 is of a batch type, and processes a plurality of substrates W together with the processing liquid LQ. Each of the plurality of substrate processing units 1 includes a processing tank 3 . Each treatment tank 3 stores the treatment liquid LQ. In addition, each processing tank 3 accommodates a plurality of substrates W. A plurality of substrates W are immersed in the processing liquid LQ of each processing tank 3 . As a result, in each processing tank 3, a plurality of substrates W are processed with the processing liquid LQ.
具體而言，處理槽3具有包含內槽31及外槽33之雙槽構造。內槽31及外槽33分別具有向上開口之上部開口。內槽31構成為貯存處理液LQ，並能收容複數個基板W。外槽33設置於內槽31之上部開口之外側面。Specifically, the treatment tank 3 has a double tank structure including an inner tank 31 and an outer tank 33 . The inner groove 31 and the outer groove 33 each have an upper opening that opens upward. The inner tank 31 is configured to store the processing liquid LQ and can accommodate a plurality of substrates W. The outer groove 33 is provided on the outer side of the upper opening of the inner groove 31 .
配管P2自配管P1分支。配管P2延伸至冷卻槽5。而且，閥9配置於配管P2。閥9使配管P2封閉或開放。藉由閥9使配管P2開放，配管P2將自外槽33溢出之處理液LQ導引至冷卻槽5。而且，冷卻槽5將處理液LQ冷卻之後排出處理液LQ。The piping P2 is branched from the piping P1. The pipe P2 extends to the cooling tank 5 . Furthermore, the valve 9 is arranged in the pipe P2. The valve 9 closes or opens the pipe P2. The pipe P2 is opened by the valve 9 , and the pipe P2 guides the treatment liquid LQ overflowing from the outer tank 33 to the cooling tank 5 . Furthermore, the cooling tank 5 cools the processing liquid LQ and then discharges the processing liquid LQ.
配管P1延伸至冷卻槽群U3。冷卻槽群U3與複數個基板處理部1分別對應地包含複數個冷卻槽350。配管P1自處理槽3延伸至冷卻槽350。而且，閥11配置於配管P1。閥11使配管P1封閉或開放。藉由閥11使配管P1開放，配管P1將自外槽33溢出之處理液LQ導引至冷卻槽350。而且，冷卻槽350將處理液LQ冷卻之後排出處理液LQ。The pipe P1 extends to the cooling tank group U3. The cooling tank group U3 includes a plurality of cooling tanks 350 corresponding to each of the plurality of substrate processing units 1 . Pipe P1 extends from the treatment tank 3 to the cooling tank 350 . Furthermore, the valve 11 is arranged in the pipe P1. The valve 11 closes or opens the pipe P1. The pipe P1 is opened by the valve 11 , and the pipe P1 guides the treatment liquid LQ overflowing from the outer tank 33 to the cooling tank 350 . Furthermore, the cooling tank 350 cools the processing liquid LQ and then discharges the processing liquid LQ.
處理液溫度調整裝置U2向各基板處理部1(具體為各處理槽3)供給處理液LQ。即，處理液溫度調整裝置U2向各基板處理部1(具體為各處理槽3)補充處理液LQ。The processing liquid temperature adjustment device U2 supplies the processing liquid LQ to each substrate processing unit 1 (specifically, each processing tank 3). That is, the processing liquid temperature adjustment device U2 replenishes the processing liquid LQ to each substrate processing unit 1 (specifically, each processing tank 3).
具體而言，處理液溫度調整裝置U2包含第1溫度調整單元200及第2溫度調整單元300。第1溫度調整單元200藉由加熱處理液LQ，使水分從自處理液供給源TKA供給之處理液LQ中蒸發，而使處理液LQ之濃度達到目標值。濃度之目標值亦可具有固定範圍。處理液LQ之濃度表示處理液LQ中特定成分之濃度。當處理液LQ係含有磷酸之液體時，處理液LQ之濃度表示處理液LQ中磷酸之濃度(以下，記為「磷酸濃度」)。Specifically, the processing liquid temperature adjustment device U2 includes a first temperature adjustment unit 200 and a second temperature adjustment unit 300 . The first temperature adjustment unit 200 heats the processing liquid LQ to evaporate water from the processing liquid LQ supplied from the processing liquid supply source TKA, so that the concentration of the processing liquid LQ reaches the target value. The target concentration value can also have a fixed range. The concentration of the treatment liquid LQ represents the concentration of a specific component in the treatment liquid LQ. When the treatment liquid LQ is a liquid containing phosphoric acid, the concentration of the treatment liquid LQ represents the concentration of phosphoric acid in the treatment liquid LQ (hereinafter, referred to as "phosphoric acid concentration").
而且，第1溫度調整單元200將濃度達到目標值之處理液LQ供給至第2溫度調整單元300。第2溫度調整單元300維持自第1溫度調整單元200供給之處理液LQ之溫度及濃度，並將處理液LQ供給至各基板處理部1(具體為各處理槽3)。即，第2溫度調整單元300將處理液LQ補充至各基板處理部1(具體為各處理槽3)。Furthermore, the first temperature adjustment unit 200 supplies the processing liquid LQ whose concentration reaches the target value to the second temperature adjustment unit 300 . The second temperature adjustment unit 300 maintains the temperature and concentration of the processing liquid LQ supplied from the first temperature adjustment unit 200 and supplies the processing liquid LQ to each substrate processing unit 1 (specifically, each processing tank 3). That is, the second temperature adjustment unit 300 replenishes each substrate processing unit 1 (specifically, each processing tank 3) with the processing liquid LQ.
具體而言，第1溫度調整單元200包含第1貯存槽210、第1測量部212、閥214、第1過濾器215、第1加熱器216、第1泵218、閥220、流量調整閥221、閥222、閥223、配管P4、配管P5、第1循環配管P6、配管P7及配管P10。圖1之例中，第1溫度調整單元200包含串聯連接之複數個第1加熱器216(具體為2個第1加熱器216)。第1加熱器216相當於「第1溫度調整部」之一例。再者，例如亦可於第1溫度調整單元200中省略第1過濾器215。Specifically, the first temperature adjustment unit 200 includes a first storage tank 210, a first measurement unit 212, a valve 214, a first filter 215, a first heater 216, a first pump 218, a valve 220, and a flow rate adjustment valve 221. , valve 222, valve 223, pipe P4, pipe P5, first circulation pipe P6, pipe P7 and pipe P10. In the example of FIG. 1 , the first temperature adjustment unit 200 includes a plurality of first heaters 216 (specifically, two first heaters 216 ) connected in series. The first heater 216 corresponds to an example of the "first temperature adjustment unit". Furthermore, for example, the first filter 215 may be omitted in the first temperature adjustment unit 200 .
又，第2溫度調整單元300包含第2貯存槽310、第2測量部312、複數個閥314、第2過濾器315、第2加熱器316、第2泵318、複數個配管P3、配管P8、閥320及第2循環配管P9。第2加熱器316相當於「第2溫度調整部」之一例。In addition, the second temperature adjustment unit 300 includes a second storage tank 310, a second measurement unit 312, a plurality of valves 314, a second filter 315, a second heater 316, a second pump 318, and a plurality of pipes P3 and P8. , valve 320 and second circulation piping P9. The second heater 316 corresponds to an example of the "second temperature adjustment unit".
於第1溫度調整單元200中，配管P4自處理液供給源TKA延伸至第1貯存槽210。閥222配置於配管P4。閥222使配管P4封閉或開放。配管P5自稀釋液供給源TKB延伸至第1貯存槽210。閥224配置於配管P5。閥224使配管P5封閉或開放。In the first temperature adjustment unit 200, the pipe P4 extends from the processing liquid supply source TKA to the first storage tank 210. The valve 222 is arranged in the pipe P4. The valve 222 closes or opens the pipe P4. The pipe P5 extends from the diluent supply source TKB to the first storage tank 210 . The valve 224 is arranged in the pipe P5. The valve 224 closes or opens the pipe P5.
第1循環配管P6自第1貯存槽210之底部延伸至上部。閥214配置於第1循環配管P6。閥214使第1循環配管P6封閉或開放。第1泵218、第1加熱器216及第1過濾器215依序自第1循環配管P6之上游向下游配置於第1循環配管P6。The first circulation pipe P6 extends from the bottom of the first storage tank 210 to the upper part. The valve 214 is arranged in the first circulation pipe P6. The valve 214 closes or opens the first circulation pipe P6. The first pump 218, the first heater 216, and the first filter 215 are arranged in the first circulation pipe P6 in this order from upstream to downstream.
配管P7自第1循環配管P6分支，延伸至第2溫度調整單元300。具體而言，配管P7自第1循環配管P6分支，延伸至第2貯存槽310。閥220配置於配管P7。閥220使配管P7封閉或開放。又，配管P10將配管P7上之閥220之上游側與下游側銜接。流量調整閥221配置於配管P10。流量調整閥221調整流經配管P10之處理液LQ之流量。閥223在流量調整閥221之下游配置於配管P10。閥223使配管P10封閉或開放。The piping P7 branches from the first circulation piping P6 and extends to the second temperature adjustment unit 300 . Specifically, the pipe P7 branches from the first circulation pipe P6 and extends to the second storage tank 310 . The valve 220 is arranged in the pipe P7. The valve 220 closes or opens the pipe P7. Furthermore, the pipe P10 connects the upstream side and the downstream side of the valve 220 on the pipe P7. The flow rate regulating valve 221 is arranged in the pipe P10. The flow rate adjustment valve 221 adjusts the flow rate of the treatment liquid LQ flowing through the pipe P10. The valve 223 is arranged in the pipe P10 downstream of the flow rate regulating valve 221 . The valve 223 closes or opens the pipe P10.
又，於第2溫度調整單元300中，配管P8自稀釋液供給源TKB延伸至第2貯存槽310。閥320配置於配管P8。閥320使配管P8封閉或開放。第2循環配管P9自第2貯存槽310之底部延伸至上部。第2泵318、第2加熱器316及第2過濾器315依序自第2循環配管P9之上游向下游配置於第2循環配管P9。Moreover, in the second temperature adjustment unit 300, the pipe P8 extends from the diluent supply source TKB to the second storage tank 310. The valve 320 is arranged in the pipe P8. The valve 320 closes or opens the pipe P8. The second circulation pipe P9 extends from the bottom of the second storage tank 310 to the upper part. The second pump 318, the second heater 316, and the second filter 315 are arranged in the second circulation pipe P9 in this order from upstream to downstream.
複數個配管P3分別與複數個基板處理部1對應配置。複數個配管P3各自從第2循環配管P9分支，延伸至對應之基板處理部1。具體而言，複數個配管P3各自從第2循環配管P9分支，延伸至對應之處理槽3。複數個閥314各自配置於對應之配管P3。閥314使配管P3封閉或開放。The plurality of pipes P3 are respectively arranged corresponding to the plurality of substrate processing units 1 . Each of the plurality of pipes P3 branches from the second circulation pipe P9 and extends to the corresponding substrate processing unit 1 . Specifically, each of the plurality of pipes P3 branches from the second circulation pipe P9 and extends to the corresponding treatment tank 3 . The plurality of valves 314 are respectively arranged in corresponding pipes P3. The valve 314 closes or opens the pipe P3.
接著，參照圖1對第1溫度調整單元200之動作進行說明。當閥222使配管P4開放時，配管P4將自處理液供給源TKA供給之處理液LQ供給至第1貯存槽210。Next, the operation of the first temperature adjustment unit 200 will be described with reference to FIG. 1 . When the valve 222 opens the pipe P4, the pipe P4 supplies the processing liquid LQ supplied from the processing liquid supply source TKA to the first storage tank 210 .
第1貯存槽210貯存自處理液供給源TKA供給之處理液LQ。第1貯存槽210具有向上開口之上部開口及蓋(以下，記為「蓋240」)。The first storage tank 210 stores the processing liquid LQ supplied from the processing liquid supply source TKA. The first storage tank 210 has an upper opening that opens upward and a cover (hereinafter, referred to as "cover 240").
第1循環配管P6將自第1貯存槽210送出之處理液LQ再次導入至第1貯存槽210，使處理液LQ循環。具體而言，第1循環配管P6藉由將自第1貯存槽210之底部送出之處理液LQ導入至第1貯存槽210之上部開口，而使處理液LQ返回至第1貯存槽210。The first circulation pipe P6 introduces the processing liquid LQ sent from the first storage tank 210 into the first storage tank 210 again, and circulates the processing liquid LQ. Specifically, the first circulation pipe P6 introduces the processing liquid LQ sent from the bottom of the first storage tank 210 to the upper opening of the first storage tank 210 to return the processing liquid LQ to the first storage tank 210 .
更具體而言，當閥214使第1循環配管P6開放，閥220使配管P7封閉時，第1泵218將自第1貯存槽210送出之處理液LQ經過第1循環配管P6朝向第1貯存槽210之上部開口送出。第1過濾器215將流經第1循環配管P6之處理液LQ過濾。More specifically, when the valve 214 opens the first circulation pipe P6 and the valve 220 closes the pipe P7, the first pump 218 sends the processing liquid LQ sent from the first storage tank 210 toward the first storage through the first circulation pipe P6. The upper part of the groove 210 is open and sent out. The first filter 215 filters the treatment liquid LQ flowing through the first circulation pipe P6.
第1加熱器216調節處理液LQ之溫度。具體而言，第1加熱器216將供給至第1貯存槽210且用以處理基板W之處理液LQ加熱至處理液LQ之標準沸點以上。即，第1加熱器216將於第1循環配管P6中流動之處理液LQ加熱至處理液LQ之標準沸點以上。進而，第1溫度調整單元200根據處理槽3中之控制條件，基於第1測量部212之測量結果自稀釋液供給源TKB向第1貯存槽210供給稀釋液，同時使處理液LQ之濃度達到目標值。The first heater 216 adjusts the temperature of the processing liquid LQ. Specifically, the first heater 216 heats the processing liquid LQ supplied to the first storage tank 210 and used to process the substrate W to a temperature higher than the standard boiling point of the processing liquid LQ. That is, the first heater 216 heats the processing liquid LQ flowing in the first circulation pipe P6 to a temperature higher than the standard boiling point of the processing liquid LQ. Furthermore, the first temperature adjustment unit 200 supplies the diluent from the diluent supply source TKB to the first storage tank 210 based on the measurement result of the first measurement unit 212 according to the control conditions in the processing tank 3, and at the same time, the concentration of the processing liquid LQ reaches target value.
處理液LQ之標準沸點係於自處理液供給源TKA而非第1循環配管P6向第1貯存槽210重新供給之處理液LQ之濃度下的沸點。一般而言，若處理液LQ之濃度變高，則處理液LQ之沸點會上升。稀釋液例如為水。水可採用DIW(去離子水)、碳酸水、電解離子水、氫水、臭氧水及稀釋濃度(例如10 ppm～100 ppm左右)之鹽酸水中之任一種。The standard boiling point of the treatment liquid LQ is the boiling point at the concentration of the treatment liquid LQ resupplied to the first storage tank 210 from the treatment liquid supply source TKA instead of the first circulation pipe P6. Generally speaking, when the concentration of the treatment liquid LQ becomes higher, the boiling point of the treatment liquid LQ increases. The diluent is, for example, water. The water can be any one of DIW (deionized water), carbonated water, electrolyzed ionized water, hydrogen water, ozone water and hydrochloric acid water with a dilute concentration (for example, about 10 ppm to 100 ppm).
於處理液LQ為磷酸水溶液之情形時，例如自處理液供給源TKA向第1貯存槽210重新供給之磷酸水溶液之磷酸濃度於室溫下為85%。磷酸濃度為85%時之磷酸水溶液之沸點為157℃。因此，於此情形時，磷酸水溶液之標準沸點為157℃。於此情形時，第1加熱器216將於第1循環配管P6中流動之磷酸水溶液加熱至標準沸點即157℃以上之160℃。進而，第1溫度調整單元200根據處理槽3中之控制條件，基於第1測量部212之測量結果自稀釋液供給源TKB向第1貯存槽210供給稀釋液，同時使磷酸水溶液之磷酸濃度達到89%。於此情形時，「89%」係濃度之目標值。When the treatment liquid LQ is a phosphoric acid aqueous solution, for example, the phosphoric acid concentration of the phosphoric acid aqueous solution resupplied from the treatment liquid supply source TKA to the first storage tank 210 is 85% at room temperature. When the phosphoric acid concentration is 85%, the boiling point of the phosphoric acid aqueous solution is 157°C. Therefore, in this case, the standard boiling point of the phosphoric acid aqueous solution is 157°C. In this case, the first heater 216 heats the phosphoric acid aqueous solution flowing in the first circulation pipe P6 to a standard boiling point of 160°C which is higher than 157°C. Furthermore, the first temperature adjustment unit 200 supplies the diluent from the diluent supply source TKB to the first storage tank 210 based on the measurement result of the first measuring unit 212 according to the control conditions in the treatment tank 3, and at the same time, the phosphoric acid concentration of the phosphoric acid aqueous solution reaches 89%. In this case, "89%" is the target concentration value.
第1測量部212對表示貯存於第1貯存槽210之處理液LQ之濃度之物理量進行測量。於本說明書中，表示處理液LQ之濃度之物理量係與處理液LQ之濃度大致成比例的值。例如，表示處理液LQ之濃度之物理量係處理液LQ中特定成分之濃度或比重。因此，第1測量部212例如為濃度計或比重計。再者，第1測量部212亦可對表示流經第1循環配管P6之處理液LQ之濃度之物理量進行測量。流經第1循環配管P6之處理液LQ之濃度及溫度分別與貯存於第1貯存槽210之處理液LQ之濃度及溫度大致相同。The first measuring unit 212 measures a physical quantity indicating the concentration of the processing liquid LQ stored in the first storage tank 210 . In this specification, the physical quantity indicating the concentration of the treatment liquid LQ is a value substantially proportional to the concentration of the treatment liquid LQ. For example, the physical quantity indicating the concentration of the treatment liquid LQ is the concentration or specific gravity of a specific component in the treatment liquid LQ. Therefore, the first measurement unit 212 is, for example, a concentration meter or a hydrometer. Furthermore, the first measurement unit 212 may also measure a physical quantity indicating the concentration of the processing liquid LQ flowing through the first circulation pipe P6. The concentration and temperature of the processing liquid LQ flowing through the first circulation pipe P6 are substantially the same as the concentration and temperature of the processing liquid LQ stored in the first storage tank 210 .
例如，控制裝置U4有時為了使處理液LQ之濃度成為目標值，而基於第1測量部212之測量結果將閥224打開，自稀釋液供給源TKB向第1貯存槽210供給稀釋液。For example, the control device U4 may open the valve 224 based on the measurement result of the first measuring unit 212 to supply the diluent from the diluent supply source TKB to the first storage tank 210 in order to achieve the target value of the concentration of the treatment liquid LQ.
在貯存於第1貯存槽210之處理液LQ之濃度達到目標值之後，第1貯存槽210將處理液LQ供給至第2貯存槽310。After the concentration of the processing liquid LQ stored in the first storage tank 210 reaches the target value, the first storage tank 210 supplies the processing liquid LQ to the second storage tank 310 .
具體而言，於第1貯存槽210之處理液LQ之濃度達到目標值之後，閥223使配管P10開放，進而，流量調整閥221調節處理液LQ之流量，將處理液LQ經過配管P10及配管P7中較閥220更靠下游側之部分，自第1貯存槽210供給至第2貯存槽310。於此情形時，閥214使第1循環配管P6開放，閥220使配管P7封閉。具體而言，於第1貯存槽210之處理液LQ之濃度達到目標值之後，第1泵218將處理液LQ經過第1循環配管P6、配管P10及配管P7中較閥220更靠下游側之部分供給至第2貯存槽310。Specifically, after the concentration of the treatment liquid LQ in the first storage tank 210 reaches the target value, the valve 223 opens the pipe P10, and then the flow rate adjustment valve 221 adjusts the flow rate of the treatment liquid LQ to pass the treatment liquid LQ through the pipe P10 and the pipe. The portion of P7 on the downstream side of the valve 220 is supplied from the first storage tank 210 to the second storage tank 310 . In this case, the valve 214 opens the first circulation pipe P6, and the valve 220 closes the pipe P7. Specifically, after the concentration of the treatment liquid LQ in the first storage tank 210 reaches the target value, the first pump 218 passes the treatment liquid LQ through the first circulation pipe P6, the pipe P10, and the pipe P7 on the downstream side of the valve 220. Part of it is supplied to the second storage tank 310 .
於本說明書中，所謂「處理液LQ之濃度達到目標值之後」，表示「表示處理液LQ之濃度之物理量達到目標值之後」，不僅是「表示處理液LQ之濃度之濃度值達到目標值之後」，例如亦是「處理液LQ之比重值達到目標值之後」。In this specification, "after the concentration of the treatment liquid LQ reaches the target value" means "after the physical quantity indicating the concentration of the treatment liquid LQ reaches the target value", not only "after the concentration value indicating the concentration of the treatment liquid LQ reaches the target value" ”, for example, it is also “after the specific gravity value of the treatment liquid LQ reaches the target value.”
接著，參照圖1對第2溫度調整單元300之動作進行說明。第2貯存槽310貯存自第1貯存槽210供給之處理液LQ。自第1貯存槽210供給之處理液LQ係濃度達到目標值之處理液LQ。第2貯存槽310具有向上開口之上部開口及蓋。Next, the operation of the second temperature adjustment unit 300 will be described with reference to FIG. 1 . The second storage tank 310 stores the processing liquid LQ supplied from the first storage tank 210 . The processing liquid LQ supplied from the first storage tank 210 is the processing liquid LQ whose concentration reaches the target value. The second storage tank 310 has an upper opening that opens upward and a lid.
第2循環配管P9將自第2貯存槽310送出之處理液LQ再次導入至第2貯存槽310，使處理液LQ循環。具體而言，第2循環配管P9藉由將自第2貯存槽310之底部送出之處理液LQ導入至第2貯存槽310之上部開口，而使處理液LQ返回至第2貯存槽310。The second circulation pipe P9 reintroduces the processing liquid LQ sent from the second storage tank 310 into the second storage tank 310 to circulate the processing liquid LQ. Specifically, the second circulation pipe P9 introduces the processing liquid LQ sent from the bottom of the second storage tank 310 to the upper opening of the second storage tank 310 to return the processing liquid LQ to the second storage tank 310 .
更具體而言，當複數個閥314各自使對應之配管P3封閉時，第2泵318將自第2貯存槽310送出之處理液LQ經過第2循環配管P9朝向第2貯存槽310之上部開口送出。第2過濾器315將流經第2循環配管P9之處理液LQ過濾。More specifically, when each of the plurality of valves 314 closes the corresponding pipe P3, the second pump 318 sends the processing liquid LQ sent from the second storage tank 310 toward the upper opening of the second storage tank 310 through the second circulation pipe P9. Send. The second filter 315 filters the treatment liquid LQ flowing through the second circulation pipe P9.
第2加熱器316調節處理液LQ之溫度。具體而言，第2加熱器316調節貯存於第2貯存槽310之處理液LQ之溫度，間接使處理液LQ之濃度維持於目標值。即，第2加熱器316調節於第2循環配管P9中流動之處理液LQ之溫度，間接使處理液LQ之濃度維持於目標值。具體而言，第2加熱器316使處理液LQ之溫度維持於標準沸點以上之規定溫度。而且，在處理液LQ之溫度維持於標準沸點以上之規定溫度之狀態下，基於第2測量部312之測量結果，經過閥320及配管P8自稀釋液供給源TKB向第2貯存槽310供給稀釋液，藉此處理液LQ之濃度維持於目標值。The second heater 316 adjusts the temperature of the processing liquid LQ. Specifically, the second heater 316 adjusts the temperature of the processing liquid LQ stored in the second storage tank 310 and indirectly maintains the concentration of the processing liquid LQ at a target value. That is, the second heater 316 adjusts the temperature of the processing liquid LQ flowing in the second circulation pipe P9 and indirectly maintains the concentration of the processing liquid LQ at the target value. Specifically, the second heater 316 maintains the temperature of the treatment liquid LQ at a predetermined temperature higher than the standard boiling point. Furthermore, while the temperature of the treatment liquid LQ is maintained at a predetermined temperature above the standard boiling point, based on the measurement result of the second measuring unit 312, dilution is supplied from the diluent supply source TKB to the second storage tank 310 through the valve 320 and the pipe P8. liquid, whereby the concentration of the treatment liquid LQ is maintained at the target value.
由於第2加熱器316係用於使處理液LQ之溫度維持於標準沸點以上之規定溫度之機器，故而第2加熱器316之電容(電力)可小於第1溫度調整單元200之2個第1加熱器216的合計電容(合計電力)。例如，2個第1加熱器216之合計電容係第2加熱器316之電容之2倍。即，2個第1加熱器216各自之電容與第2加熱器316之電容大致相同。Since the second heater 316 is a device used to maintain the temperature of the processing liquid LQ at a predetermined temperature above the standard boiling point, the capacitance (power) of the second heater 316 can be smaller than the first temperature adjustment unit 200. The total capacitance (total electric power) of the heater 216. For example, the total capacitance of the two first heaters 216 is twice the capacitance of the second heater 316. That is, the capacitance of each of the two first heaters 216 is substantially the same as the capacitance of the second heater 316 .
第2測量部312對表示貯存於第2貯存槽310之處理液LQ之濃度之物理量進行測量。例如，第2測量部312為濃度計或比重計。再者，第2測量部312亦可對表示流經第2循環配管P9之處理液LQ之濃度之物理量進行測量。流經第2循環配管P9之處理液LQ之濃度及溫度分別與貯存於第2貯存槽310之處理液LQ之濃度及溫度大致相同。The second measuring unit 312 measures a physical quantity indicating the concentration of the processing liquid LQ stored in the second storage tank 310 . For example, the second measurement unit 312 is a concentration meter or a hydrometer. Furthermore, the second measurement unit 312 may also measure a physical quantity indicating the concentration of the processing liquid LQ flowing through the second circulation pipe P9. The concentration and temperature of the processing liquid LQ flowing through the second circulation pipe P9 are substantially the same as the concentration and temperature of the processing liquid LQ stored in the second storage tank 310 .
例如，控制裝置U4有時為了使處理液LQ之濃度維持於目標值，而基於第2測量部312之測量結果將閥320打開，自稀釋液供給源TKB向第2貯存槽310供給稀釋液。For example, in order to maintain the concentration of the processing liquid LQ at the target value, the control device U4 may open the valve 320 based on the measurement result of the second measurement unit 312 and supply the diluent from the diluent supply source TKB to the second storage tank 310 .
第2貯存槽310向基板處理部1(具體為處理槽3)供給處理液LQ。即，第2貯存槽310向基板處理部1(具體為處理槽3)補充處理液LQ。The second storage tank 310 supplies the processing liquid LQ to the substrate processing unit 1 (specifically, the processing tank 3). That is, the second storage tank 310 replenishes the substrate processing unit 1 (specifically, the processing tank 3) with the processing liquid LQ.
具體而言，當閥314使配管P3開放時，自第2循環配管P9經過配管P3向處理槽3供給處理液LQ。例如處理液LQ可自第2貯存槽310被供給至處理槽3之外槽33，自外槽33經過循環配管(未圖示)被供給至內槽31。例如，處理液LQ亦可自第2貯存槽310直接被供給至內槽31。Specifically, when the valve 314 opens the pipe P3, the processing liquid LQ is supplied to the treatment tank 3 from the second circulation pipe P9 through the pipe P3. For example, the processing liquid LQ can be supplied from the second storage tank 310 to the outer tank 33 of the processing tank 3, and can be supplied from the outer tank 33 to the inner tank 31 through a circulation pipe (not shown). For example, the processing liquid LQ may be directly supplied from the second storage tank 310 to the inner tank 31 .
控制裝置U4可個別地控制複數個閥314之各者。因此，可自第2貯存槽310向各基板處理部1(具體為各處理槽3)個別地供給處理液LQ。The control device U4 can control each of the plurality of valves 314 individually. Therefore, the processing liquid LQ can be individually supplied from the second storage tank 310 to each substrate processing unit 1 (specifically, each processing tank 3).
接下來，參照圖2對第1溫度調整單元200進行說明。圖2係表示第1溫度調整單元200之第1貯存槽210之模式性剖視圖。圖2中，為了簡化圖式，而省略了配管P4、P5、第1過濾器215、第1泵218、閥214及第1測量部212。Next, the first temperature adjustment unit 200 will be described with reference to FIG. 2 . FIG. 2 is a schematic cross-sectional view showing the first storage tank 210 of the first temperature adjustment unit 200. In FIG. 2 , in order to simplify the drawing, pipes P4 and P5, the first filter 215, the first pump 218, the valve 214, and the first measurement unit 212 are omitted.
如圖2所示，第1貯存槽210包含槽本體230及蓋240。蓋240覆蓋槽本體230之上部開口。蓋240亦可使槽本體230之上部開口開放。As shown in FIG. 2 , the first storage tank 210 includes a tank body 230 and a cover 240 . The cover 240 covers the upper opening of the tank body 230 . The cover 240 can also open the upper opening of the tank body 230 .
第1溫度調整單元200進而包含氣體供給機構250、氣體供給單元280及配管261。The first temperature adjustment unit 200 further includes a gas supply mechanism 250, a gas supply unit 280, and a pipe 261.
氣體供給機構250經過配管261向氣體供給單元280供給氣體GA。The gas supply mechanism 250 supplies the gas GA to the gas supply unit 280 through the pipe 261.
氣體供給單元280對貯存於第1貯存槽210之處理液LQ供給由氣體供給機構250供給之氣體GA。具體而言，氣體供給單元280包含至少1個氣體供給構件281、第1配管283、第2配管285、第1保持構件287、第2保持構件289、第1固定構件291及第2固定構件293。於實施方式1中，氣體供給單元280包含複數個氣體供給構件281。再者，圖2中示出1個氣體供給構件281。The gas supply unit 280 supplies the gas GA supplied from the gas supply mechanism 250 to the processing liquid LQ stored in the first storage tank 210 . Specifically, the gas supply unit 280 includes at least one gas supply member 281, a first pipe 283, a second pipe 285, a first holding member 287, a second holding member 289, a first fixing member 291, and a second fixing member 293. . In Embodiment 1, the gas supply unit 280 includes a plurality of gas supply members 281 . In addition, one gas supply member 281 is shown in FIG. 2 .
氣體GA係促進水分自利用第1加熱器216加熱至標準沸點以上之處理液LQ中蒸發之氣體。氣體GA例如為惰性氣體。惰性氣體例如為氮氣或氬氣。The gas GA is a gas that promotes the evaporation of moisture from the treatment liquid LQ heated to a temperature higher than the standard boiling point by the first heater 216. Gas GA is, for example, an inert gas. The inert gas is, for example, nitrogen or argon.
氣體供給構件281配置於第1貯存槽210之內部。詳細而言，氣體供給構件281在第1貯存槽210之內部配置於第1貯存槽210之底部230a。氣體供給構件281固定於第1貯存槽210之底部230a。氣體供給構件281可與第1貯存槽210之底部230a接觸，亦可與第1貯存槽210之底部230a分開。The gas supply member 281 is arranged inside the first storage tank 210 . Specifically, the gas supply member 281 is arranged at the bottom 230a of the first storage tank 210 inside the first storage tank 210 . The gas supply member 281 is fixed to the bottom 230a of the first storage tank 210. The gas supply member 281 may be in contact with the bottom 230a of the first storage tank 210, or may be separated from the bottom 230a of the first storage tank 210.
氣體供給構件281對貯存於第1貯存槽210且加熱至標準沸點以上之處理液LQ供給氣體GA。氣體供給構件281例如為起泡器。具體而言，氣體供給構件281朝向上方，即，朝向處理液LQ之液面對處理液LQ供給氣體GA。於此情形時，氣體供給構件281將氣體GA以氣泡BB之形式供給至處理液LQ。The gas supply member 281 supplies the gas GA to the processing liquid LQ stored in the first storage tank 210 and heated to a temperature higher than the standard boiling point. The gas supply member 281 is a bubbler, for example. Specifically, the gas supply member 281 supplies the gas GA to the processing liquid LQ upward, that is, toward the liquid surface of the processing liquid LQ. In this case, the gas supply member 281 supplies the gas GA in the form of bubbles BB to the processing liquid LQ.
具體而言，氣體供給構件281與第1方向D1大致平行。第1方向D1例如與水平方向大致平行。氣體供給構件281沿著第1貯存槽210之底部230a配置。Specifically, the gas supply member 281 is substantially parallel to the first direction D1. The first direction D1 is, for example, substantially parallel to the horizontal direction. The gas supply member 281 is arranged along the bottom 230a of the first storage tank 210.
氣體供給構件281具有大致筒形狀。氣體供給構件281例如為管。氣體供給構件281之材質例如為石英或樹脂。樹脂例如為PFA(四氟乙烯-全氟烷基乙烯基醚共聚物)、PTFE(聚四氟乙烯)、或PEEK(聚醚醚酮)。The gas supply member 281 has a substantially cylindrical shape. The gas supply member 281 is a pipe, for example. The material of the gas supply member 281 is, for example, quartz or resin. The resin is, for example, PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer), PTFE (polytetrafluoroethylene), or PEEK (polyetheretherketone).
尤其是若氣體供給構件281之材質為樹脂，則容易進行氣體供給構件281之加工。進而，若氣體供給構件281之材質為PFA，則容易進行彎曲加工。例如亦能將氣體供給構件281加工成L字狀。因此，能夠減少氣體供給構件281與其他配管之接口。其結果為，能夠提高氣體供給構件281之耐久性。In particular, if the material of the gas supply member 281 is resin, the gas supply member 281 can be easily processed. Furthermore, if the material of the gas supply member 281 is PFA, bending processing can be easily performed. For example, the gas supply member 281 may be processed into an L shape. Therefore, the number of interfaces between the gas supply member 281 and other pipes can be reduced. As a result, the durability of the gas supply member 281 can be improved.
此處，圖2中為了便於理解，圖中示出氣體供給構件281之右端部之截面。氣體供給構件281具有流路FW0。Here, in FIG. 2 , a cross-section of the right end portion of the gas supply member 281 is shown for ease of understanding. The gas supply member 281 has a flow path FW0.
又，氣體供給構件281具有複數個氣體供給口G。氣體供給口G例如為孔。氣體供給口G之直徑例如為數十μm～數百μm之程度。例如，氣體供給口G之直徑為0.2 mm。例如，於1個氣體供給構件281設置之氣體供給口G之數量例如為40個。In addition, the gas supply member 281 has a plurality of gas supply ports G. The gas supply port G is a hole, for example. The diameter of the gas supply port G is, for example, on the order of tens to hundreds of μm. For example, the diameter of the gas supply port G is 0.2 mm. For example, the number of gas supply ports G provided in one gas supply member 281 is, for example, 40.
氣體供給構件281朝向貯存於第1貯存槽210且加熱至標準沸點以上之處理液LQ，自複數個氣體供給口G供給氣體GA。具體而言，氣體供給構件281朝向貯存於第1貯存槽210且加熱至標準沸點以上之處理液LQ，自複數個氣體供給口G以複數個氣泡BB之形式供給氣體GA。即，氣體供給構件281藉由自複數個氣體供給口G向貯存於第1貯存槽210之溫度為標準沸點以上之處理液LQ吹出氣體GA，而於溫度為標準沸點以上之處理液LQ中自複數個氣體供給口G產生複數個氣泡BB(大量氣泡BB)。The gas supply member 281 supplies the gas GA from the plurality of gas supply ports G toward the processing liquid LQ stored in the first storage tank 210 and heated to a temperature higher than the standard boiling point. Specifically, the gas supply member 281 supplies the gas GA in the form of a plurality of bubbles BB from a plurality of gas supply ports G toward the treatment liquid LQ stored in the first storage tank 210 and heated to a temperature higher than the standard boiling point. That is, the gas supply member 281 blows the gas GA from the plurality of gas supply ports G to the processing liquid LQ whose temperature is higher than the standard boiling point stored in the first storage tank 210, and thereby blows the gas GA into the processing liquid LQ whose temperature is higher than the standard boiling point. A plurality of gas supply ports G generate a plurality of bubbles BB (a large number of bubbles BB).
再者，只要氣體供給構件281能對處理液LQ供給氣體GA(具體為氣泡BB)，則氣體供給構件281之構成及原材料無特別限定。例如，氣體供給構件281可包含具有大致筒形狀之多孔質構件。又，例如氣體供給構件281亦可將多孔質構件固定於具有大致筒形狀之構件而構成。In addition, as long as the gas supply member 281 can supply gas GA (specifically, bubbles BB) to the processing liquid LQ, the structure and raw materials of the gas supply member 281 are not particularly limited. For example, the gas supply member 281 may include a porous member having a substantially cylindrical shape. Moreover, for example, the gas supply member 281 may be formed by fixing a porous member to a member having a substantially cylindrical shape.
第1溫度調整單元200進而包含排氣配管部270。排氣配管部270連接於第1貯存槽210之上部。圖2之例中，排氣配管部270連接於蓋240。排氣配管部270自第1貯存槽210中排出水蒸氣及氣體。由排氣配管部270排出之氣體係自氣體供給構件281供給至加熱至標準沸點以上之處理液LQ中，並自處理液LQ之液面出來之氣體GA。又，由排氣配管部270排出之水蒸氣係加熱至標準沸點以上之處理液LQ中所含之水分蒸發而產生，並自處理液LQ之液面出來之水蒸氣。The first temperature adjustment unit 200 further includes an exhaust piping portion 270 . The exhaust piping part 270 is connected to the upper part of the first storage tank 210 . In the example of FIG. 2 , the exhaust piping portion 270 is connected to the cover 240 . The exhaust piping part 270 discharges water vapor and gas from the first storage tank 210 . The gas system discharged from the exhaust piping section 270 is supplied from the gas supply member 281 to the treatment liquid LQ heated to a temperature higher than the standard boiling point, and the gas GA emerges from the liquid surface of the treatment liquid LQ. In addition, the water vapor discharged from the exhaust piping part 270 is generated by the evaporation of water contained in the treatment liquid LQ heated to a temperature higher than the standard boiling point, and comes out from the liquid surface of the treatment liquid LQ.
具體而言，排氣配管部270包含連結構件271及排氣配管273。連結構件271將第1貯存槽210與排氣配管273連結。具體而言，連結構件271之一端連接於第1貯存槽210之上部(圖2之例中為蓋240)，連結構件271之另一端連接於排氣配管273。排氣配管273例如具有大致圓筒形狀。排氣配管273自第1貯存槽210中排出水蒸氣及氣體。即，排氣配管273將經過連結構件271自第1貯存槽210流入之水蒸氣及氣體排出至第1貯存槽210之外部。Specifically, the exhaust piping section 270 includes a connecting member 271 and an exhaust piping 273 . The connecting member 271 connects the first storage tank 210 and the exhaust pipe 273 . Specifically, one end of the connecting member 271 is connected to the upper part of the first storage tank 210 (the cover 240 in the example of FIG. 2 ), and the other end of the connecting member 271 is connected to the exhaust pipe 273 . The exhaust pipe 273 has a substantially cylindrical shape, for example. The exhaust pipe 273 discharges water vapor and gas from the first storage tank 210 . That is, the exhaust pipe 273 discharges the water vapor and gas flowing in from the first storage tank 210 through the connecting member 271 to the outside of the first storage tank 210 .
以上，如參照圖1及圖2所說明，根據實施方式1，第1溫度調整單元200之氣體供給構件281對利用第1加熱器216加熱至標準沸點以上之處理液LQ供給促進水分蒸發之氣體GA。藉此，促進了處理液LQ中之水分蒸發。其結果為，與不供給氣體GA之情況相比，能使處理液LQ之濃度快速達到目標值。As described above with reference to FIGS. 1 and 2 , according to Embodiment 1, the gas supply member 281 of the first temperature adjustment unit 200 supplies the gas that promotes evaporation of water to the processing liquid LQ heated to a temperature higher than the standard boiling point by the first heater 216 G.A. Thereby, the evaporation of water in the treatment liquid LQ is accelerated. As a result, the concentration of the treatment liquid LQ can reach the target value more quickly than when the gas GA is not supplied.
又，若能於第1貯存槽210中使處理液LQ之濃度快速達到目標值，則對於自第1貯存槽210至第2貯存槽310，能夠增加濃度達到目標值之處理液LQ之「每固定時間之供給量」。因此，即便在貯存於處理槽3之處理液LQ之濃度變化較大之情形時，亦能自第2貯存槽310向處理槽3供給大量濃度達到目標值之處理液LQ。其結果為，能於處理槽3中維持處理液LQ之濃度。由此，能使複數個基板W之處理均勻化。Furthermore, if the concentration of the treatment liquid LQ can be quickly reached to the target value in the first storage tank 210, then from the first storage tank 210 to the second storage tank 310, it is possible to increase the concentration of the treatment liquid LQ to reach the target value every time. Supply for a fixed period of time." Therefore, even when the concentration of the treatment liquid LQ stored in the treatment tank 3 greatly changes, a large amount of the treatment liquid LQ whose concentration reaches the target value can be supplied to the treatment tank 3 from the second storage tank 310 . As a result, the concentration of the treatment liquid LQ can be maintained in the treatment tank 3 . Thereby, the processing of a plurality of substrates W can be made uniform.
例如，於作為基板W之半導體晶圓具有用於形成三維快閃記憶體之表面圖案之情形時，表面圖案之凹部較深，故而被作為處理液LQ之磷酸水溶液蝕刻之矽之蝕刻量增多。因此，為了將處理槽3中處理液LQ之濃度維持固定，必須向處理槽3供給大量濃度達到目標值之處理液LQ。因此，於實施方式1中，藉由對加熱至標準沸點以上之處理液LQ供給氣體GA以促進水分蒸發，而使處理液LQ之濃度快速達到目標值。因此，即便在貯存於處理槽3之處理液LQ中矽之濃度變化較大之情形時，亦能自第1貯存槽210向第2貯存槽310，進而自第2貯存槽310向處理槽3供給大量濃度達到目標值之處理液LQ。其結果為，能於處理槽3中維持處理液LQ之濃度，從而能使複數個基板W之處理均勻化。For example, when the semiconductor wafer as the substrate W has a surface pattern for forming a three-dimensional flash memory, the recessed portion of the surface pattern is deep, so the etching amount of silicon etched by the phosphoric acid aqueous solution as the processing liquid LQ increases. Therefore, in order to maintain the concentration of the treatment liquid LQ in the treatment tank 3 constant, a large amount of the treatment liquid LQ whose concentration reaches the target value must be supplied to the treatment tank 3 . Therefore, in Embodiment 1, gas GA is supplied to the treatment liquid LQ heated above the standard boiling point to promote water evaporation, so that the concentration of the treatment liquid LQ quickly reaches the target value. Therefore, even when the concentration of silicon in the treatment liquid LQ stored in the treatment tank 3 changes greatly, it is possible to move from the first storage tank 210 to the second storage tank 310, and further from the second storage tank 310 to the treatment tank 3. Supply a large amount of treatment liquid LQ whose concentration reaches the target value. As a result, the concentration of the processing liquid LQ can be maintained in the processing tank 3, and the processing of the plurality of substrates W can be made uniform.
又，於實施方式1中，由於基板處理系統100具有複數個基板處理部1，故而處理液LQ之使用量較多。然而，於實施方式1中，由於能使處理液LQ之濃度快速達到目標值，故而即便於基板處理系統100具有複數個基板處理部1之情形時，亦能自第2貯存槽310向各基板處理部1之處理槽3以所期望之流量穩定地供給濃度達到目標值之處理液LQ。Furthermore, in Embodiment 1, since the substrate processing system 100 has a plurality of substrate processing units 1, the usage amount of the processing liquid LQ is large. However, in Embodiment 1, since the concentration of the processing liquid LQ can be quickly reached to the target value, even when the substrate processing system 100 has a plurality of substrate processing units 1, it is possible to supply each substrate from the second storage tank 310. The treatment tank 3 of the treatment part 1 stably supplies the treatment liquid LQ whose concentration reaches the target value at a desired flow rate.
又，於實施方式1中，氣體供給構件281對第1貯存槽210之處理液LQ供給氣體GA之氣泡BB。因此，處理液LQ中之水分藉由朝處理液LQ之液面上升之氣泡BB而朝向液面往上方輸送。其結果為，能夠進一步促進處理液LQ中之水分蒸發。尤其是當處理液LQ接近沸騰狀態時，氣泡BB之水分包含量增加，使更多之水分自液面釋放，水分之蒸發效率提高。由此，能使處理液LQ之濃度更快地達到目標值。Furthermore, in Embodiment 1, the gas supply member 281 supplies the bubbles BB of the gas GA to the processing liquid LQ in the first storage tank 210 . Therefore, the water in the processing liquid LQ is transported upward toward the liquid surface by the bubbles BB rising toward the liquid surface of the processing liquid LQ. As a result, the evaporation of water in the treatment liquid LQ can be further accelerated. Especially when the treatment liquid LQ is close to the boiling state, the moisture content of the bubbles BB increases, causing more moisture to be released from the liquid surface, and the evaporation efficiency of the moisture increases. This allows the concentration of the treatment liquid LQ to reach the target value more quickly.
尤其是，氣體供給構件281於第1貯存槽210之底部230a與第1方向D1(水平方向)大致平行地配置為佳。於該較佳之例中，與氣體供給構件281與鉛直方向大致平行地配置之情況相比，自複數個氣體供給口G供給之氣泡BB之移動距離較長。其結果為，能夠進一步促進處理液LQ中之水分蒸發，從而能使處理液LQ之濃度更快地達到目標值。In particular, it is preferable that the gas supply member 281 is disposed substantially parallel to the first direction D1 (horizontal direction) on the bottom 230 a of the first storage tank 210 . In this preferred example, compared with the case where the gas supply member 281 is arranged substantially parallel to the vertical direction, the moving distance of the bubbles BB supplied from the plurality of gas supply ports G is longer. As a result, the evaporation of water in the treatment liquid LQ can be further accelerated, so that the concentration of the treatment liquid LQ can reach the target value more quickly.
又，於實施方式1中，為了使貯存於第1貯存槽210之處理液LQ之濃度達到目標值，而對處理液LQ供給氣體GA，並且將處理液LQ加熱至標準沸點以上。因此，於第1貯存槽210中，氣體GA自處理液LQ中出來，並且水分自處理液LQ中蒸發。Moreover, in Embodiment 1, in order to make the concentration of the processing liquid LQ stored in the first storage tank 210 reach a target value, the gas GA is supplied to the processing liquid LQ, and the processing liquid LQ is heated to a temperature higher than the standard boiling point. Therefore, in the first storage tank 210, the gas GA comes out of the processing liquid LQ, and the water evaporates from the processing liquid LQ.
而且，在貯存於第1貯存槽210之處理液LQ之濃度達到目標值之後，自第1貯存槽210向第2貯存槽310供給處理液LQ。進而，第2加熱器316調節貯存於第2貯存槽310之處理液LQ之溫度，使處理液LQ之濃度維持於目標值。因此，於第2貯存槽310中，水分基本上不自處理液LQ中蒸發。其原因在於：處理液LQ中之水分基本上在第1貯存槽210中蒸發。再者，於第2貯存槽310中，不對處理液LQ供給氣體GA。其結果為，自第2貯存槽310供給至第2循環配管P9之處理液LQ幾乎不包含水蒸氣等氣體。由此，能夠恰當地控制於第2循環配管P9中流動之處理液LQ之流量。進而，能夠恰當地控制自第2循環配管P9及配管P3供給至基板處理部1(具體為處理槽3)之處理液LQ之流量。Then, after the concentration of the processing liquid LQ stored in the first storage tank 210 reaches the target value, the processing liquid LQ is supplied from the first storage tank 210 to the second storage tank 310 . Furthermore, the second heater 316 adjusts the temperature of the processing liquid LQ stored in the second storage tank 310 to maintain the concentration of the processing liquid LQ at a target value. Therefore, in the second storage tank 310, water substantially does not evaporate from the treatment liquid LQ. This is because the moisture in the treatment liquid LQ is basically evaporated in the first storage tank 210 . In addition, in the second storage tank 310, the gas GA is not supplied to the processing liquid LQ. As a result, the processing liquid LQ supplied from the second storage tank 310 to the second circulation pipe P9 contains almost no gas such as water vapor. Thereby, the flow rate of the processing liquid LQ flowing in the second circulation pipe P9 can be appropriately controlled. Furthermore, the flow rate of the processing liquid LQ supplied from the second circulation pipe P9 and the pipe P3 to the substrate processing unit 1 (specifically, the processing tank 3 ) can be appropriately controlled.
又，於實施方式1中，處理液LQ較佳為「含有磷酸之液體」。於此情形時，處理液LQ係藉由沸騰使特定成分(磷酸)之濃度高於常溫時或室溫時之濃度而使用之液體。因此，於處理液LQ係「含有磷酸之液體」之情形時，特別有效的是藉由將處理液LQ加熱至標準沸點以上，同時對處理液LQ供給氣體GA，而使處理液LQ之濃度快速達到目標值。Moreover, in Embodiment 1, it is preferable that the processing liquid LQ is "liquid containing phosphoric acid." In this case, the treatment liquid LQ is a liquid used by boiling so that the concentration of a specific component (phosphoric acid) is higher than that at normal temperature or room temperature. Therefore, when the treatment liquid LQ is a "liquid containing phosphoric acid", it is particularly effective to increase the concentration of the treatment liquid LQ by heating the treatment liquid LQ above the standard boiling point and simultaneously supplying the gas GA to the treatment liquid LQ. reach the target value.
進而，於實施方式1中，自第1貯存槽210間接地，即經由第2貯存槽310向基板處理部1(具體為處理槽3)供給處理液LQ。即，第1貯存槽210對基板處理部1(具體為處理槽3)間接供給處理液LQ。Furthermore, in Embodiment 1, the processing liquid LQ is supplied to the substrate processing unit 1 (specifically, the processing tank 3 ) from the first storage tank 210 indirectly, that is, via the second storage tank 310 . That is, the first storage tank 210 indirectly supplies the processing liquid LQ to the substrate processing unit 1 (specifically, the processing tank 3 ).
但是，基板處理系統100亦可不具備第2溫度調整單元300。具體而言，亦可自第1貯存槽210直接向基板處理部1(具體為處理槽3)供給處理液LQ。即，第1貯存槽210亦可直接向基板處理部1(具體為處理槽3)供給處理液LQ。於此情形時，亦能於第1貯存槽210中使處理液LQ之濃度快速達到目標值。於自第1貯存槽210直接向基板處理部1供給處理液LQ之情形時，例如將複數個配管P3連接於第1溫度調整單元200之第1循環配管P6，於複數個配管P3上分別配置複數個閥314。於此情形時，不設置閥214、220。However, the substrate processing system 100 does not need to include the second temperature adjustment unit 300 . Specifically, the processing liquid LQ may be directly supplied from the first storage tank 210 to the substrate processing unit 1 (specifically, the processing tank 3 ). That is, the first storage tank 210 may directly supply the processing liquid LQ to the substrate processing unit 1 (specifically, the processing tank 3 ). In this case, the concentration of the treatment liquid LQ in the first storage tank 210 can quickly reach the target value. When the processing liquid LQ is directly supplied from the first storage tank 210 to the substrate processing unit 1, for example, a plurality of pipes P3 are connected to the first circulation pipe P6 of the first temperature adjustment unit 200, and are respectively arranged on the plurality of pipes P3. A plurality of valves 314. In this case, valves 214 and 220 are not provided.
又，於實施方式1中，較佳為如圖2所示，排氣配管273之流路275之截面面積A滿足式(1)。式(1)中，「V」表示當不執行將處理液LQ加熱至標準沸點以上之處理及對處理液LQ供給氣體GA之處理時，流經排氣配管273之流路275之排出氣體之流速。「Q」表示水蒸氣及氣體GA每單位時間自處理液LQ之液面之排氣量。Moreover, in Embodiment 1, as shown in FIG. 2, it is preferable that the cross-sectional area A of the flow path 275 of the exhaust pipe 273 satisfies the formula (1). In the formula (1), "V" represents the exhaust gas flowing through the flow path 275 of the exhaust piping 273 when the process of heating the treatment liquid LQ to above the standard boiling point and the process of supplying the gas GA to the treatment liquid LQ are not performed. flow rate. "Q" represents the exhaust volume of water vapor and gas GA from the liquid surface of the treatment liquid LQ per unit time.
A×V≧Q (1)A×V≧Q (1)
當排氣配管273之流路275之截面面積A滿足式(1)時，能有效地將自處理液LQ之液面排出之水蒸氣及氣體排出。因此，進一步促進了處理液LQ中之水分蒸發。其結果為，能使處理液LQ之濃度更快地達到目標值。When the cross-sectional area A of the flow path 275 of the exhaust pipe 273 satisfies the formula (1), the water vapor and gas discharged from the liquid surface of the treatment liquid LQ can be effectively discharged. Therefore, evaporation of water in the treatment liquid LQ is further accelerated. As a result, the concentration of the treatment liquid LQ can reach the target value more quickly.
再者，式(1)中，「V」亦可表示當執行將處理液LQ加熱至標準沸點以上之處理及對處理液LQ供給氣體GA之處理時，流經排氣配管273之流路275之排出氣體之流速。Furthermore, in the formula (1), "V" may also represent the flow path 275 flowing through the exhaust pipe 273 when performing the process of heating the treatment liquid LQ to a temperature higher than the standard boiling point and the process of supplying the gas GA to the treatment liquid LQ. The flow rate of the exhaust gas.
接下來，參照圖2及圖3對氣體供給單元280進行說明。圖3係表示氣體供給單元280之模式性俯視圖。再者，於圖2之氣體供給單元280中，示出沿著圖3之II-II線之截面。Next, the gas supply unit 280 will be described with reference to FIGS. 2 and 3 . FIG. 3 is a schematic plan view of the gas supply unit 280. In addition, in the gas supply unit 280 of FIG. 2, the cross section along the line II-II of FIG. 3 is shown.
如圖3所示，氣體供給單元280之複數個氣體供給構件281於第1貯存槽210之內部大致相互平行，且於第2方向D2上隔開間隔配置。第2方向D2與第1方向D1大致正交，與水平方向大致平行。氣體供給構件281沿第1方向D1延伸。於複數個氣體供給構件281之各者中，複數個氣體供給口G在第1方向D1上隔開間隔地配置於大致一直線上。於複數個氣體供給構件281之各者中，各氣體供給口G設置於氣體供給構件281之上表面部。而且，各氣體供給口G朝向上方，即，朝向處理液LQ之液面對處理液LQ供給氣體GA。於此情形時，各氣體供給口G將氣體GA以氣泡BB之形式供給至處理液LQ。As shown in FIG. 3 , the plurality of gas supply members 281 of the gas supply unit 280 are substantially parallel to each other inside the first storage tank 210 and are arranged at intervals in the second direction D2. The second direction D2 is substantially orthogonal to the first direction D1 and substantially parallel to the horizontal direction. The gas supply member 281 extends in the first direction D1. In each of the plurality of gas supply members 281, the plurality of gas supply ports G are arranged on a substantially straight line at intervals in the first direction D1. In each of the plurality of gas supply members 281 , each gas supply port G is provided on an upper surface portion of the gas supply member 281 . Furthermore, each gas supply port G is directed upward, that is, toward the liquid surface of the processing liquid LQ, and supplies the gas GA to the processing liquid LQ. In this case, each gas supply port G supplies gas GA in the form of bubbles BB to the processing liquid LQ.
再者，只要能自氣體供給口G向處理液LQ供給氣體GA(具體為氣泡BB)，則氣體供給口G之位置無特別限定。又，於各氣體供給構件281中，複數個氣體供給口G可等間隔配置，亦可非等間隔配置。進而，氣體供給構件281之姿勢無特別限定。In addition, the position of the gas supply port G is not particularly limited as long as gas GA (specifically bubbles BB) can be supplied from the gas supply port G to the processing liquid LQ. In addition, in each gas supply member 281, the plurality of gas supply ports G may be arranged at equal intervals or may be arranged at non-equal intervals. Furthermore, the posture of the gas supply member 281 is not particularly limited.
複數個氣體供給構件281各自具有第1端部281a及第2端部281b。第1端部281a係第1方向D1上之氣體供給構件281之兩端部中之一端部。第2端部281b係第1方向D1上之氣體供給構件281之兩端部中之另一端部。Each of the plurality of gas supply members 281 has a first end 281a and a second end 281b. The first end 281a is one of both ends of the gas supply member 281 in the first direction D1. The second end 281b is the other end of the two ends of the gas supply member 281 in the first direction D1.
於複數個氣體供給構件281之第1端部281a連接第1配管283。第1配管283沿第2方向D2延伸。第1配管283之流路FW1(圖2)與各氣體供給構件281之流路FW0(圖2)連通。各氣體供給構件281之第1端部281a及第1配管283由第1保持構件287保持。第1保持構件287例如具有大致長方體形狀。第1保持構件287沿第2方向D2延伸。The first pipe 283 is connected to the first end portions 281a of the plurality of gas supply members 281. The first pipe 283 extends in the second direction D2. The flow path FW1 (Fig. 2) of the first pipe 283 communicates with the flow path FW0 (Fig. 2) of each gas supply member 281. The first end portion 281 a of each gas supply member 281 and the first pipe 283 are held by the first holding member 287 . The first holding member 287 has a substantially rectangular parallelepiped shape, for example. The first holding member 287 extends in the second direction D2.
複數個氣體供給構件281之第2端部281b被封閉。各氣體供給構件281之第2端部281b由第2保持構件289保持。第2保持構件289例如具有大致長方體形狀。第2保持構件289沿第2方向D2延伸。第2保持構件289相對於第1保持構件287大致平行。The second end portions 281b of the plurality of gas supply members 281 are closed. The second end portion 281b of each gas supply member 281 is held by the second holding member 289. The second holding member 289 has a substantially rectangular parallelepiped shape, for example. The second holding member 289 extends in the second direction D2. The second holding member 289 is substantially parallel to the first holding member 287 .
藉由分別利用第1保持構件287及第2保持構件289保持氣體供給構件281之第1端部281a及第2端部281b，能夠抑制氣體供給構件281之變形。又，如圖2及圖3所示，第1保持構件287藉由複數個第1固定構件291固定於第1貯存槽210之底部230a。又，第2保持構件289藉由複數個第2固定構件293固定於第1貯存槽210之底部230a。By holding the first end 281 a and the second end 281 b of the gas supply member 281 with the first holding member 287 and the second holding member 289 respectively, deformation of the gas supply member 281 can be suppressed. Moreover, as shown in FIGS. 2 and 3 , the first holding member 287 is fixed to the bottom 230 a of the first storage tank 210 by a plurality of first fixing members 291 . In addition, the second holding member 289 is fixed to the bottom 230a of the first storage tank 210 by a plurality of second fixing members 293.
又，第2配管285之下端部連接於第1配管283。第2配管285沿第3方向D3延伸。第3方向D3與第1方向D1及第2方向D2大致正交。第3方向D3與鉛直方向大致平行。第2配管285之流路FW2與第1配管283之流路FW2連通。Furthermore, the lower end of the second pipe 285 is connected to the first pipe 283 . The second pipe 285 extends in the third direction D3. The third direction D3 is substantially orthogonal to the first direction D1 and the second direction D2. The third direction D3 is substantially parallel to the vertical direction. The flow path FW2 of the second pipe 285 is connected to the flow path FW2 of the first pipe 283.
接著，參照圖2對氣體供給機構250進行說明。氣體供給機構250將自氣體供給源263供給之氣體GA從配管261經過第2配管285及第1配管283供給至各氣體供給構件281。Next, the gas supply mechanism 250 will be described with reference to FIG. 2 . The gas supply mechanism 250 supplies the gas GA supplied from the gas supply source 263 from the pipe 261 to each gas supply member 281 through the second pipe 285 and the first pipe 283.
具體而言，氣體供給機構250包含閥251、過濾器253、流量計257及調整閥259。閥251、過濾器253、流量計257及調整閥259依序自配管261之下游向上游配置於配管261。Specifically, the gas supply mechanism 250 includes a valve 251, a filter 253, a flow meter 257, and a regulating valve 259. The valve 251, the filter 253, the flow meter 257, and the adjustment valve 259 are arranged in the pipe 261 in this order from the downstream to the upstream of the pipe 261.
調整閥259調節配管261之開度，以調整向各氣體供給構件281供給之氣體GA之流量。流量計257測量流經配管261之氣體GA之流量。調整閥259基於流量計257之測量結果調整氣體之流量。再者，例如亦可設置質量流量控制器來代替調整閥259及流量計257。The adjustment valve 259 adjusts the opening of the pipe 261 to adjust the flow rate of the gas GA supplied to each gas supply member 281. The flow meter 257 measures the flow rate of the gas GA flowing through the pipe 261. The adjustment valve 259 adjusts the flow rate of the gas based on the measurement result of the flow meter 257 . Furthermore, for example, a mass flow controller may be provided instead of the regulating valve 259 and the flow meter 257 .
過濾器253自流經配管261之氣體GA中去除異物。閥251使配管261開閉。即，閥251切換氣體GA自配管261向氣體供給構件281之供給與供給停止。The filter 253 removes foreign matter from the gas GA flowing through the pipe 261. The valve 251 opens and closes the pipe 261. That is, the valve 251 switches between the supply of the gas GA from the pipe 261 to the gas supply member 281 and the stop of the supply.
接下來，參照圖1、圖2及圖4對本發明之實施方式1之基板處理方法進行說明。圖4係表示實施方式1之基板處理方法之流程圖。如圖4所示，基板處理方法包括步驟S1～步驟S10。基板處理方法係藉由基板處理系統100來執行。而且，基板處理方法係將隔開間隔排列之複數個基板W浸漬於貯存在基板處理部1之處理槽3之處理液LQ中，利用處理液LQ對複數個基板W進行處理。又，步驟S1～步驟S8相當於「處理液溫度調整方法」之一例。Next, the substrate processing method according to Embodiment 1 of the present invention will be described with reference to FIGS. 1 , 2 and 4 . FIG. 4 is a flowchart showing the substrate processing method according to Embodiment 1. As shown in FIG. 4 , the substrate processing method includes steps S1 to S10. The substrate processing method is performed by the substrate processing system 100 . In the substrate processing method, a plurality of substrates W arranged at intervals are immersed in the processing liquid LQ stored in the processing tank 3 of the substrate processing unit 1, and the plurality of substrates W are processed using the processing liquid LQ. In addition, steps S1 to S8 correspond to an example of the "processing liquid temperature adjustment method."
如圖1、圖2及圖4所示，於步驟S1中，藉由控制裝置U4之控制，第1溫度調整單元200之第1加熱器216開始處理液LQ之加熱。具體而言，第1加熱器216將用以處理基板W之處理液LQ加熱至處理液LQ之標準沸點以上。As shown in FIGS. 1, 2 and 4, in step S1, under the control of the control device U4, the first heater 216 of the first temperature adjustment unit 200 starts heating the treatment liquid LQ. Specifically, the first heater 216 heats the processing liquid LQ used to process the substrate W to a temperature higher than the standard boiling point of the processing liquid LQ.
接下來，於步驟S2中，藉由利用控制裝置U4對氣體供給機構250進行控制，各氣體供給構件281開始對貯存於第1貯存槽210之處理液LQ供給氣體GA(具體為氣泡BB)。即，各氣體供給構件281將促進水分自利用第1加熱器216加熱至標準沸點以上之處理液LQ中蒸發之氣體GA(具體為氣泡BB)供給至貯存於第1貯存槽210之處理液LQ。Next, in step S2, by controlling the gas supply mechanism 250 using the control device U4, each gas supply member 281 starts supplying the gas GA (specifically, the bubbles BB) to the processing liquid LQ stored in the first storage tank 210. That is, each gas supply member 281 supplies the gas GA (specifically, bubbles BB) that promotes the evaporation of moisture from the treatment liquid LQ heated to a temperature higher than the standard boiling point by the first heater 216 to the treatment liquid LQ stored in the first storage tank 210 .
接下來，於步驟S3中，排氣配管部270將自第1貯存槽210之處理液LQ之液面出來之水蒸氣及氣體GA排出。即，排氣配管部270自第1貯存槽210中排出水蒸氣及氣體GA。再者，始終持續利用排氣配管部270自第1貯存槽210中排氣，不限於水蒸氣及氣體GA之排出。Next, in step S3 , the exhaust piping unit 270 discharges the water vapor and gas GA emerging from the liquid surface of the treatment liquid LQ in the first storage tank 210 . That is, the exhaust piping section 270 discharges water vapor and gas GA from the first storage tank 210 . In addition, the exhaust piping part 270 is continuously used to exhaust gas from the first storage tank 210, and is not limited to the exhaust of water vapor and gas GA.
接下來，於步驟S4中，控制裝置U4基於第1測量部212之測量結果判定處理液LQ之濃度是否達到目標值。Next, in step S4, the control device U4 determines whether the concentration of the processing liquid LQ reaches the target value based on the measurement result of the first measurement unit 212.
當於步驟S4中判定為處理液LQ之濃度未達到目標值時，處理反覆進行步驟S4直至判定為處理液LQ之濃度達到目標值。When it is determined in step S4 that the concentration of the treatment liquid LQ has not reached the target value, the process repeats step S4 until it is determined that the concentration of the treatment liquid LQ has reached the target value.
另一方面，當於步驟S4中判定為處理液LQ之濃度已達到目標值時，處理進入步驟S5。On the other hand, when it is determined in step S4 that the concentration of the treatment liquid LQ has reached the target value, the process proceeds to step S5.
於步驟S5中，控制裝置U4判定處理液LQ自第1貯存槽210向第2貯存槽310之供給時點是否到來。處理液LQ之供給時點例如為第2貯存槽310之處理液LQ之量成為規定值以下之時。In step S5, the control device U4 determines whether the supply timing of the processing liquid LQ from the first storage tank 210 to the second storage tank 310 has arrived. The supply timing of the processing liquid LQ is, for example, when the amount of the processing liquid LQ in the second storage tank 310 becomes a predetermined value or less.
當於步驟S5中判定為供給時點未到來時，處理反覆進行步驟S5直至判定為供給時點到來。When it is determined in step S5 that the supply time has not arrived, the process repeats step S5 until it is determined that the supply time has arrived.
另一方面，當於步驟S5中判定為供給時點已到來時，處理進入步驟S6。On the other hand, when it is determined in step S5 that the supply timing has arrived, the process proceeds to step S6.
於步驟S6中，藉由利用控制裝置U4對閥214、220進行控制，第1貯存槽210向第2貯存槽310供給處理液LQ。即，自第1貯存槽210向第2貯存槽310供給處理液LQ。In step S6, by controlling the valves 214 and 220 using the control device U4, the first storage tank 210 supplies the processing liquid LQ to the second storage tank 310. That is, the processing liquid LQ is supplied from the first storage tank 210 to the second storage tank 310 .
接下來，於步驟S7中，藉由控制裝置U4之控制，第2加熱器316調節貯存於第2貯存槽310之處理液LQ之溫度，間接使處理液LQ之濃度維持於目標值。Next, in step S7, under the control of the control device U4, the second heater 316 adjusts the temperature of the processing liquid LQ stored in the second storage tank 310, thereby indirectly maintaining the concentration of the processing liquid LQ at the target value.
於步驟S8中，藉由利用控制裝置U4對閥314進行控制，第2貯存槽310向基板處理部1(具體為處理槽3)供給處理液LQ。即，自第2貯存槽310向基板處理部1(具體為處理槽3)供給處理液LQ。In step S8, by controlling the valve 314 using the control device U4, the second storage tank 310 supplies the processing liquid LQ to the substrate processing unit 1 (specifically, the processing tank 3). That is, the processing liquid LQ is supplied from the second storage tank 310 to the substrate processing unit 1 (specifically, the processing tank 3 ).
此處，自第2貯存槽310向處理槽3供給處理液LQ之目的在於：抑制因基板W之處理而導致貯存於處理槽3之處理液LQ中矽濃度上升，於處理槽3中使矽濃度維持於目標值。因此，例如在不依存於處理槽3之處理液LQ之液量之情形時，基於過去實際成果使矽濃度維持於目標值所需之量之處理液LQ持續自第2貯存槽310供給至處理槽3，以稀釋矽濃度。再者，貯存於第1貯存槽210及第2貯存槽310之處理液LQ不含矽。Here, the purpose of supplying the processing liquid LQ from the second storage tank 310 to the processing tank 3 is to suppress an increase in the silicon concentration in the processing liquid LQ stored in the processing tank 3 due to the processing of the substrate W, and to increase the silicon concentration in the processing tank 3 . The concentration is maintained at the target value. Therefore, for example, when it does not depend on the liquid volume of the processing liquid LQ in the processing tank 3, the processing liquid LQ in the amount required to maintain the silicon concentration at the target value based on past actual results is continuously supplied from the second storage tank 310 to the processing. Tank 3, to dilute the silicon concentration. Furthermore, the processing liquid LQ stored in the first storage tank 210 and the second storage tank 310 does not contain silicon.
再者，例如當存在能夠於生產線上持續測定處理液LQ中矽濃度之測定機器時，亦可基於測定機器之測定結果，於矽濃度超過目標值而上升時，自第2貯存槽310向處理槽3供給處理液LQ，於矽濃度下降至目標值時，停止處理液LQ之供給。Furthermore, for example, if there is a measuring device capable of continuously measuring the silicon concentration in the treatment liquid LQ on the production line, based on the measurement results of the measuring device, when the silicon concentration exceeds the target value and rises, the second storage tank 310 may be transferred to the processing unit. The tank 3 supplies the processing liquid LQ, and when the silicon concentration drops to the target value, the supply of the processing liquid LQ is stopped.
接下來，於步驟S9中，藉由控制裝置U4之控制，搬送機械手(未圖示)將基板W搬送至基板處理部1之基板保持部(未圖示)，進而，基板保持部將複數個基板W浸漬於處理槽3之處理液LQ中，利用處理液LQ對複數個基板W進行處理。Next, in step S9, under the control of the control device U4, the transport robot (not shown) transports the substrate W to the substrate holding part (not shown) of the substrate processing part 1, and further, the substrate holding part will A plurality of substrates W are immersed in the processing liquid LQ in the processing tank 3, and a plurality of substrates W are processed using the processing liquid LQ.
接下來，於步驟S10中，藉由控制裝置U4之控制，基板處理部1之基板保持部(未圖示)自處理槽3之處理液LQ中提拉出複數個基板W，進而，搬送機械手(未圖示)自基板保持部接受基板W將其搬送。然後，基板處理方法結束。Next, in step S10, under the control of the control device U4, the substrate holding part (not shown) of the substrate processing part 1 pulls out a plurality of substrates W from the processing liquid LQ of the processing tank 3, and then the conveying machine The hand (not shown) receives the substrate W from the substrate holding portion and transports it. Then, the substrate processing method ends.
以上，如參照圖4所說明，於實施方式1之基板處理方法中，將貯存於第1貯存槽210之處理液LQ加熱至標準沸點以上，與此並行地執行對貯存於第1貯存槽210之處理液LQ供給促進水分蒸發之氣體GA之處理、及自第1貯存槽210中排出水蒸氣及氣體GA之處理。因此，能夠促進水分自處理液LQ中蒸發，從而使處理液LQ之濃度快速達到目標值。As described above with reference to FIG. 4 , in the substrate processing method of Embodiment 1, the processing liquid LQ stored in the first storage tank 210 is heated to a temperature higher than the standard boiling point, and in parallel with this, the processing liquid LQ stored in the first storage tank 210 is heated. The treatment liquid LQ supplies the gas GA that promotes the evaporation of water, and the water vapor and the gas GA are discharged from the first storage tank 210 . Therefore, the evaporation of water from the treatment liquid LQ can be promoted, so that the concentration of the treatment liquid LQ can quickly reach the target value.
(實施方式2) 參照圖5及圖6，對本發明之實施方式2之基板處理系統100A進行說明。實施方式2與實施方式1之主要不同點在於：實施方式2之基板處理系統100A之基板處理部1A係一片一片地對基板W進行處理之逐片型。以下，主要對實施方式2與實施方式1之不同點進行說明。(Embodiment 2) Referring to FIGS. 5 and 6 , a substrate processing system 100A according to Embodiment 2 of the present invention will be described. The main difference between Embodiment 2 and Embodiment 1 is that the substrate processing unit 1A of the substrate processing system 100A of Embodiment 2 is a piece-by-piece type that processes the substrates W one by one. Hereinafter, the differences between Embodiment 2 and Embodiment 1 will be mainly described.
圖5係表示實施方式2之基板處理系統100A之模式圖。如圖5所示，基板處理系統100A具備處理裝置U1A，代替圖1所示之處理裝置U1。處理裝置U1A包含複數個基板處理部1A。複數個基板處理部1A各自包含腔室400、噴嘴401、旋轉夾頭402、旋轉馬達403及承杯404。FIG. 5 is a schematic diagram showing a substrate processing system 100A according to Embodiment 2. As shown in FIG. 5 , the substrate processing system 100A includes a processing device U1A instead of the processing device U1 shown in FIG. 1 . The processing device U1A includes a plurality of substrate processing units 1A. Each of the plurality of substrate processing units 1A includes a chamber 400, a nozzle 401, a spin chuck 402, a spin motor 403, and a holder 404.
腔室400收容噴嘴401、旋轉夾頭402、旋轉馬達403及承杯404。旋轉馬達403使旋轉夾頭402繞旋轉軸線旋轉。其結果為，旋轉夾頭402使基板W保持水平地繞旋轉軸線旋轉。旋轉軸線與鉛直方向大致平行。噴嘴401向旋轉中之基板W噴出自處理液溫度調整裝置U2供給之處理液LQ。承杯404沿著相對於旋轉軸線之圓周方向包圍旋轉夾頭402。承杯404接住自基板W飛散之處理液LQ，將處理液LQ回收或排出。The chamber 400 accommodates the nozzle 401, the rotating chuck 402, the rotating motor 403 and the cup holder 404. The rotation motor 403 rotates the rotation chuck 402 about the rotation axis. As a result, the rotation chuck 402 rotates the substrate W around the rotation axis while keeping the substrate W horizontal. The axis of rotation is approximately parallel to the vertical direction. The nozzle 401 sprays the processing liquid LQ supplied from the processing liquid temperature adjustment device U2 toward the rotating substrate W. The cup 404 surrounds the rotating chuck 402 along the circumferential direction relative to the axis of rotation. The cup 404 catches the treatment liquid LQ scattered from the substrate W, and recovers or discharges the treatment liquid LQ.
處理液溫度調整裝置U2具備與複數個閥314分別對應之複數個流量計391、及與複數個閥314分別對應之複數個流量調整閥392。流量計391及流量調整閥392配置於較閥314更靠配管P3之下游。The processing liquid temperature adjusting device U2 includes a plurality of flow meters 391 respectively corresponding to the plurality of valves 314, and a plurality of flow adjustment valves 392 respectively corresponding to the plurality of valves 314. The flow meter 391 and the flow adjustment valve 392 are arranged downstream of the valve 314 in the pipe P3.
流量計391檢測流經配管P3之處理液LQ之流量，並輸出表示流量之檢測信號。流量調整閥392調整流經配管P3之處理液LQ之流量。閥314使配管P3開放或封閉，切換處理液LQ對噴嘴401之供給開始與供給停止。The flow meter 391 detects the flow rate of the treatment liquid LQ flowing through the pipe P3, and outputs a detection signal indicating the flow rate. The flow rate adjustment valve 392 adjusts the flow rate of the treatment liquid LQ flowing through the pipe P3. The valve 314 opens or closes the pipe P3, and switches the supply start and stop of the processing liquid LQ to the nozzle 401.
實施方式2之基板處理系統100A與實施方式1之基板處理系統100同樣地具備第1溫度調整單元200。因此，於實施方式2中，與實施方式1同樣地，能使第1貯存槽210之處理液LQ之濃度快速達到目標值。又，實施方式2之基板處理系統100A與實施方式1之基板處理系統100同樣地具備第2溫度調整單元300。因此，於實施方式2中，與實施方式1同樣地，能夠恰當地控制於第2循環配管P9中流動之處理液LQ之流量。進而，於實施方式2中，由於基板處理系統100A具有複數個基板處理部1A(例如12個～24個)，故而處理液LQ之使用量較多。然而，於實施方式2中，與實施方式1同樣地，由於能使處理液LQ之濃度快速達到目標值，故而即便於基板處理系統100A具有複數個基板處理部1A之情形時，亦能自第2貯存槽310向各基板處理部1A以所期望之流量穩定地供給濃度達到目標值之處理液LQ。除此以外，實施方式2之基板處理系統100A具有與實施方式1之基板處理系統100相同之效果。The substrate processing system 100A of Embodiment 2 is equipped with the 1st temperature adjustment unit 200 similarly to the substrate processing system 100 of Embodiment 1. Therefore, in Embodiment 2, similarly to Embodiment 1, the concentration of the treatment liquid LQ in the first storage tank 210 can be quickly reached the target value. Moreover, the substrate processing system 100A of Embodiment 2 is equipped with the 2nd temperature adjustment unit 300 similarly to the substrate processing system 100 of Embodiment 1. Therefore, in Embodiment 2, similarly to Embodiment 1, the flow rate of the processing liquid LQ flowing in the second circulation pipe P9 can be appropriately controlled. Furthermore, in Embodiment 2, since the substrate processing system 100A has a plurality of substrate processing units 1A (eg, 12 to 24), the usage amount of the processing liquid LQ is large. However, in Embodiment 2, as in Embodiment 1, since the concentration of the processing liquid LQ can be quickly reached to the target value, even when the substrate processing system 100A has a plurality of substrate processing units 1A, it is possible to start the processing from the second substrate processing unit 1A. The storage tank 310 stably supplies the processing liquid LQ whose concentration reaches the target value at a desired flow rate to each substrate processing unit 1A. Otherwise, the substrate processing system 100A of the second embodiment has the same effects as the substrate processing system 100 of the first embodiment.
再者，於圖5中，為了簡化圖式，省略了圖1所示之配管P4、P5、P8、P10、閥221、222、223、224、320、第1測量部212及第2測量部312。In addition, in FIG. 5 , in order to simplify the drawing, the pipes P4, P5, P8, P10, valves 221, 222, 223, 224, 320, the first measurement part 212 and the second measurement part shown in FIG. 1 are omitted. 312.
接下來，參照圖6對本發明之實施方式2之基板處理方法進行說明。圖6係表示實施方式2之基板處理方法之流程圖。如圖6所示，基板處理方法包括步驟S21～步驟S31。基板處理方法係藉由基板處理系統100A來執行。而且，基板處理方法對旋轉中之基板W噴出處理液LQ，對基板W進行處理。又，步驟S21～步驟S29相當於「處理液溫度調整方法」之一例。Next, a substrate processing method according to Embodiment 2 of the present invention will be described with reference to FIG. 6 . FIG. 6 is a flowchart showing the substrate processing method according to Embodiment 2. As shown in FIG. 6 , the substrate processing method includes steps S21 to S31. The substrate processing method is performed by the substrate processing system 100A. Furthermore, the substrate processing method ejects the processing liquid LQ onto the rotating substrate W to process the substrate W. In addition, steps S21 to S29 correspond to an example of the "processing liquid temperature adjustment method."
如圖6所示，步驟S21～步驟S27之處理與圖4所示之步驟S1～步驟S7之處理相同，省略說明。As shown in FIG. 6 , the processing of steps S21 to S27 is the same as the processing of steps S1 to S7 shown in FIG. 4 , and the description is omitted.
接下來，於步驟S28中，控制裝置U4判定處理液LQ向複數個基板處理部1A中之任一基板處理部1A(具體為噴嘴401)之供給時點是否到來。處理液LQ之供給時點例如為處理液LQ自噴嘴401向基板W之噴出時點。Next, in step S28, the control device U4 determines whether the supply timing of the processing liquid LQ to any one of the plurality of substrate processing units 1A (specifically, the nozzle 401) has come. The supply time of the processing liquid LQ is, for example, the time when the processing liquid LQ is ejected from the nozzle 401 to the substrate W.
當於步驟S28中判定為供給時點未到來時，處理反覆進行步驟S28直至判定為供給時點到來。When it is determined in step S28 that the supply time has not arrived, the process repeats step S28 until it is determined that the supply time has arrived.
另一方面，當於步驟S28中判定為供給時點已到來時，處理進入步驟S29。On the other hand, when it is determined in step S28 that the supply timing has arrived, the process proceeds to step S29.
於步驟S29中，藉由利用控制裝置U4對閥314進行控制，第2貯存槽310向基板處理部1A(具體為噴嘴401)供給處理液LQ。即，自第2貯存槽310向基板處理部1(具體為噴嘴401)供給處理液LQ。In step S29, by controlling the valve 314 using the control device U4, the second storage tank 310 supplies the processing liquid LQ to the substrate processing unit 1A (specifically, the nozzle 401). That is, the processing liquid LQ is supplied from the second storage tank 310 to the substrate processing unit 1 (specifically, the nozzle 401 ).
接下來，於步驟S30中，基板處理部1之噴嘴401向旋轉中之基板W噴出處理液LQ，利用處理液LQ對基板W進行處理。Next, in step S30 , the nozzle 401 of the substrate processing unit 1 sprays the processing liquid LQ toward the rotating substrate W, and the substrate W is processed by the processing liquid LQ.
具體而言，於噴嘴401向基板W噴出處理液LQ之前，由旋轉夾頭402保持經搬送機械手(未圖示)搬送之基板W。而且，噴嘴40向由旋轉夾頭402保持並旋轉之基板W噴出處理液LQ。Specifically, before the nozzle 401 ejects the processing liquid LQ onto the substrate W, the substrate W transported by the transport robot (not shown) is held by the rotating chuck 402 . Furthermore, the nozzle 40 ejects the processing liquid LQ toward the substrate W held and rotated by the spin chuck 402 .
接下來，於步驟S31中，藉由控制裝置U4之控制，搬送機械手(未圖示)將基板W自基板處理部1A之腔室400中搬出。然後，基板處理方法結束。Next, in step S31, under the control of the control device U4, a transport robot (not shown) carries the substrate W out of the chamber 400 of the substrate processing unit 1A. Then, the substrate processing method ends.
以上，如參照圖6所說明，於實施方式2之基板處理方法中，將貯存於第1貯存槽210之處理液LQ加熱至標準沸點以上，與此並行地執行對貯存於第1貯存槽210之處理液LQ供給促進水分蒸發之氣體GA之處理、及自第1貯存槽210中排出水蒸氣及氣體GA之處理。因此，能夠促進水分自處理液LQ中蒸發，從而使處理液LQ之濃度快速達到目標值。As described above with reference to FIG. 6 , in the substrate processing method of Embodiment 2, the processing liquid LQ stored in the first storage tank 210 is heated to above the standard boiling point, and in parallel with this, the processing liquid LQ stored in the first storage tank 210 is heated. The treatment liquid LQ supplies the gas GA that promotes the evaporation of water, and the water vapor and the gas GA are discharged from the first storage tank 210 . Therefore, the evaporation of water from the treatment liquid LQ can be promoted, so that the concentration of the treatment liquid LQ can quickly reach the target value.
(實施方式3) 參照圖7～圖10對本發明之實施方式3之基板處理系統100B進行說明。實施方式3與實施方式1之主要不同點在於：實施方式3之基板處理系統100B於處理槽110中將處理液LQ加熱至標準沸點以上。以下，主要對實施方式3與實施方式1之不同點進行說明。(Embodiment 3) A substrate processing system 100B according to Embodiment 3 of the present invention will be described with reference to FIGS. 7 to 10 . The main difference between Embodiment 3 and Embodiment 1 is that the substrate processing system 100B of Embodiment 3 heats the processing liquid LQ in the processing tank 110 to above the standard boiling point. Hereinafter, the differences between Embodiment 3 and Embodiment 1 will be mainly described.
首先，參照圖7對基板處理系統100B進行說明。圖7係表示實施方式3之基板處理系統100B之模式性剖視圖。基板處理系統100B為批次式，利用處理液LQ對複數個基板W一起進行處理。基板處理系統100B相當於「處理液溫度調整裝置」之一例。First, the substrate processing system 100B will be described with reference to FIG. 7 . FIG. 7 is a schematic cross-sectional view showing a substrate processing system 100B according to Embodiment 3. The substrate processing system 100B is a batch type, and processes a plurality of substrates W together using the processing liquid LQ. The substrate processing system 100B is equivalent to an example of a "processing liquid temperature adjustment device."
如圖7所示，基板處理系統100B具備處理槽110、基板保持部120、複數個循環處理液供給構件130、循環部140、處理液供給部150、稀釋液供給部160、排液部170、氣體供給機構250、排氣配管部270、氣體供給單元280A及控制裝置U4。於實施方式3中，處理槽110相當於「基板處理部」。As shown in FIG. 7 , the substrate processing system 100B includes a processing tank 110 , a substrate holding unit 120 , a plurality of circulating processing liquid supply members 130 , a circulation unit 140 , a processing liquid supply unit 150 , a diluent supply unit 160 , and a drain unit 170 . Gas supply mechanism 250, exhaust piping section 270, gas supply unit 280A, and control device U4. In Embodiment 3, the processing tank 110 corresponds to the "substrate processing unit".
處理槽110貯存處理液LQ。而且，處理槽110將複數個基板W浸漬於處理液LQ中，對複數個基板W進行處理。處理槽110相當於「第1貯存槽」之一例。The treatment tank 110 stores the treatment liquid LQ. Furthermore, the processing tank 110 immerses the plurality of substrates W in the processing liquid LQ and processes the plurality of substrates W. The processing tank 110 corresponds to an example of the "first storage tank".
基板保持部120保持複數個基板W。基板保持部120包含升降器。基板保持部120將隔開間隔排列之複數個基板W浸漬於貯存在處理槽110之處理液LQ中。複數個循環處理液供給構件130向處理槽110供給處理液LQ。循環部140使貯存於處理槽110之處理液LQ循環，將處理液LQ供給至各個循環處理液供給構件130。處理液供給部150將處理液LQ供給至處理槽110。稀釋液供給部160將稀釋液供給至處理槽110。排液部170排出處理槽110之處理液LQ。稀釋液例如為水。除此以外，稀釋液與實施方式1之稀釋液相同。The substrate holding unit 120 holds a plurality of substrates W. The substrate holding part 120 includes a lifter. The substrate holding part 120 immerses a plurality of substrates W arranged at intervals into the processing liquid LQ stored in the processing tank 110 . The plurality of circulating processing liquid supply members 130 supply the processing liquid LQ to the processing tank 110 . The circulation unit 140 circulates the processing liquid LQ stored in the processing tank 110 and supplies the processing liquid LQ to each circulating processing liquid supply member 130 . The processing liquid supply unit 150 supplies the processing liquid LQ to the processing tank 110 . The diluent supply unit 160 supplies the dilution liquid to the treatment tank 110 . The liquid drain part 170 drains the processing liquid LQ of the processing tank 110 . The diluent is, for example, water. Otherwise, the diluent is the same as that of Embodiment 1.
氣體供給單元280A將自氣體供給機構250供給之氣體GA供給至處理槽110之處理液LQ中。具體而言，氣體供給單元280A向處理槽110之處理液LQ中供給氣體GA之氣泡BB。氣體GA例如為惰性氣體。氣體GA例如為促進水分自加熱至標準沸點以上之處理液LQ中蒸發之氣體。除此以外，氣體GA與實施方式1之氣體GA相同。The gas supply unit 280A supplies the gas GA supplied from the gas supply mechanism 250 to the processing liquid LQ in the processing tank 110 . Specifically, the gas supply unit 280A supplies the bubbles BB of the gas GA into the processing liquid LQ of the processing tank 110 . Gas GA is, for example, an inert gas. The gas GA is, for example, a gas that promotes the evaporation of water from the treatment liquid LQ heated to a temperature higher than the standard boiling point. Other than that, the gas GA is the same as the gas GA in Embodiment 1.
氣體供給機構250將氣體GA供給至氣體供給單元280A。排氣配管部270自處理槽110中排出水蒸氣及氣體GA。控制裝置U4控制基板處理系統100B之各構成。例如，控制裝置U4控制基板保持部120、循環部140、處理液供給部150、稀釋液供給部160、排液部170及氣體供給機構250。The gas supply mechanism 250 supplies gas GA to the gas supply unit 280A. The exhaust piping section 270 discharges water vapor and gas GA from the treatment tank 110 . The control device U4 controls each component of the substrate processing system 100B. For example, the control device U4 controls the substrate holding part 120, the circulation part 140, the processing liquid supply part 150, the diluent supply part 160, the liquid discharge part 170, and the gas supply mechanism 250.
具體而言，處理槽110具有包含內槽112及外槽114之雙槽構造。內槽112及外槽114分別具有向上開口之上部開口。內槽112構成為貯存處理液LQ，並能收容複數個基板W。外槽114設置於內槽112之上部開口之外側面。外槽114上緣之高度高於內槽112上緣之高度。Specifically, the processing tank 110 has a double tank structure including an inner tank 112 and an outer tank 114 . The inner groove 112 and the outer groove 114 each have an upper opening that opens upward. The inner tank 112 is configured to store the processing liquid LQ and can accommodate a plurality of substrates W. The outer groove 114 is disposed on the outer side of the upper opening of the inner groove 112 . The height of the upper edge of the outer groove 114 is higher than the height of the upper edge of the inner groove 112 .
處理槽110進而具有蓋116。蓋116可相對於內槽112之上部開口開閉。藉由關閉蓋116，蓋116能夠蓋住內槽112之上部開口。The processing tank 110 further has a cover 116 . The cover 116 can be opened and closed relative to the upper opening of the inner groove 112 . By closing the cover 116, the cover 116 can cover the upper opening of the inner tank 112.
蓋116具有開門部116a及開門部116b。開門部116a位於內槽112之上部開口中之一側。開門部116a配置於內槽112之上緣附近，可相對於內槽112之上部開口開閉。開門部116b位於內槽112之上部開口中之另一側。開門部116b配置於內槽112之上緣附近，可相對於內槽112之上部開口開閉。藉由關閉開門部116a及開門部116b而覆蓋內槽112之上部開口，能夠蓋住處理槽110之內槽112。The cover 116 has a door opening 116a and a door opening 116b. The door opening 116a is located on one side of the upper opening of the inner groove 112 . The door opening 116a is disposed near the upper edge of the inner groove 112 and can be opened and closed relative to the upper opening of the inner groove 112 . The door opening 116b is located on the other side of the upper opening of the inner groove 112. The door opening 116b is disposed near the upper edge of the inner groove 112 and can be opened and closed relative to the upper opening of the inner groove 112 . By closing the door portion 116a and the door portion 116b to cover the upper opening of the inner tank 112, the inner tank 112 of the processing tank 110 can be covered.
基板保持部120以保持複數個基板W之狀態向鉛直上方或鉛直下方移動。藉由基板保持部120向鉛直下方移動，由基板保持部120保持之複數個基板W被浸漬於貯存在內槽112之處理液LQ中。The substrate holding portion 120 moves vertically upward or vertically downward while holding a plurality of substrates W. As the substrate holding portion 120 moves vertically downward, the plurality of substrates W held by the substrate holding portion 120 are immersed in the processing liquid LQ stored in the inner tank 112 .
基板保持部120包含本體板122及保持棒124。本體板122係沿鉛直方向(Z方向)延伸之板。保持棒124自本體板122之一主面沿水平方向(Y方向)延伸。圖7之例中，3個保持棒124自本體板122之一主面沿水平方向延伸。複數個基板W以隔開間隔排列之狀態，由複數個保持棒124抵接各基板W之下緣而以豎起姿勢(鉛直姿勢)保持。The substrate holding part 120 includes a body plate 122 and a holding rod 124 . The body plate 122 is a plate extending along the vertical direction (Z direction). The holding rod 124 extends in the horizontal direction (Y direction) from one main surface of the body plate 122 . In the example of FIG. 7 , three holding rods 124 extend in the horizontal direction from one main surface of the body plate 122 . The plurality of substrates W are arranged at intervals and are held in an upright position (vertical position) by a plurality of holding rods 124 contacting the lower edge of each substrate W.
基板保持部120亦可進而包含升降單元126。升降單元126使本體板122於處理位置(圖8(b)所示之位置)與退避位置(圖8(a)所示之位置)之間升降，上述處理位置係由基板保持部120保持之複數個基板W位於內槽112內之位置，上述退避位置係由基板保持部120保持之複數個基板W位於內槽112上方之位置。因此，藉由利用升降單元126使本體板122被移動到處理位置，而將由保持棒124保持之複數個基板W浸漬於處理液LQ中。藉此，對複數個基板W實施處理。The substrate holding part 120 may further include a lifting unit 126 . The lifting unit 126 raises and lowers the body plate 122 between the processing position (the position shown in FIG. 8(b) ) and the retreat position (the position shown in FIG. 8(a) ). The processing position is held by the substrate holding part 120 The plurality of substrates W are located in the inner groove 112 , and the retracted position is the position where the plurality of substrates W held by the substrate holding part 120 are located above the inner groove 112 . Therefore, by moving the body plate 122 to the processing position using the lifting unit 126, the plurality of substrates W held by the holding rods 124 are immersed in the processing liquid LQ. Thereby, a plurality of substrates W are processed.
複數個循環處理液供給構件130向處理槽110之內槽112供給處理液LQ。複數個循環處理液供給構件130在處理槽110之內槽112之內部配置於內槽112之底部110a。複數個循環處理液供給構件130各自具有大致筒形狀。複數個循環處理液供給構件130各自例如為管。The plurality of circulating processing liquid supply members 130 supply the processing liquid LQ to the tank 112 in the processing tank 110 . A plurality of circulating processing liquid supply members 130 are arranged inside the inner tank 112 of the processing tank 110 at the bottom 110 a of the inner tank 112 . Each of the plurality of circulating processing liquid supply members 130 has a substantially cylindrical shape. Each of the plurality of circulating processing liquid supply members 130 is, for example, a pipe.
具體而言，複數個循環處理液供給構件130各自具有複數個處理液噴出口P。圖7中，對1個循環處理液供給構件130僅示出1個處理液噴出口P。複數個循環處理液供給構件130各自從複數個處理液噴出口P向內槽112供給處理液LQ。再者，圖7中，處理液噴出口P朝向斜上方，但不限於此，處理液噴出口P亦可朝向下方或側方。Specifically, each of the plurality of circulating processing liquid supply members 130 has a plurality of processing liquid discharge ports P. In FIG. 7 , only one processing liquid discharge port P is shown for each circulating processing liquid supply member 130 . Each of the plurality of circulating processing liquid supply members 130 supplies the processing liquid LQ from the plurality of processing liquid discharge ports P to the inner tank 112 . Furthermore, in FIG. 7 , the processing liquid discharge port P faces obliquely upward, but it is not limited thereto. The processing liquid discharge port P may also face downward or sideways.
循環部140包含配管141、泵142、加熱器143、過濾器144、調整閥145、閥146及測量部147。泵142、加熱器143、過濾器144、調整閥145及閥146依序自配管141之上游向下游配置。加熱器143相當於「第1溫度調整部」之一例。The circulation unit 140 includes a pipe 141, a pump 142, a heater 143, a filter 144, a regulating valve 145, a valve 146, and a measurement unit 147. The pump 142, the heater 143, the filter 144, the regulating valve 145, and the valve 146 are arranged in this order from upstream to downstream of the pipe 141. The heater 143 corresponds to an example of the "first temperature adjustment unit".
配管141將自處理槽110送出之處理液LQ再次導入至處理槽110。具體而言，配管141之上游端連接於外槽114。因此，配管141自外槽114向循環處理液供給構件130導入處理液LQ。於配管141之下游端連接複數個循環處理液供給構件130。The pipe 141 introduces the processing liquid LQ sent from the processing tank 110 into the processing tank 110 again. Specifically, the upstream end of the pipe 141 is connected to the outer tank 114 . Therefore, the pipe 141 introduces the processing liquid LQ from the outer tank 114 to the circulating processing liquid supply member 130 . A plurality of circulating processing liquid supply members 130 are connected to the downstream end of the pipe 141 .
泵142自配管141向複數個循環處理液供給構件130輸送處理液LQ。因此，循環處理液供給構件130將自配管141供給之處理液LQ供給至處理槽110。過濾器144將流經配管141之處理液LQ過濾。The pump 142 transports the processing liquid LQ from the pipe 141 to the plurality of circulating processing liquid supply members 130 . Therefore, the circulating processing liquid supply member 130 supplies the processing liquid LQ supplied from the pipe 141 to the processing tank 110 . The filter 144 filters the treatment liquid LQ flowing through the pipe 141.
加熱器143將流經配管141之處理液LQ之溫度升高。即，加熱器143調節處理液LQ之溫度。The heater 143 increases the temperature of the treatment liquid LQ flowing through the pipe 141. That is, the heater 143 adjusts the temperature of the processing liquid LQ.
具體而言，在將基板W浸漬於處理液LQ中對基板W進行處理之期間，加熱器143使處理液LQ之溫度維持在低於處理液LQ之標準沸點之規定溫度(以下，「規定溫度TM」)。規定溫度TM亦可具有固定範圍。Specifically, while the substrate W is immersed in the processing liquid LQ and the substrate W is processed, the heater 143 maintains the temperature of the processing liquid LQ at a predetermined temperature lower than the standard boiling point of the processing liquid LQ (hereinafter, "prescribed temperature"). TM"). The prescribed temperature TM may also have a fixed range.
又，在未將基板W浸漬於處理液LQ之期間，要使處理液LQ之濃度達到目標值時，加熱器143將處理液LQ之溫度升高至處理液LQ之標準沸點以上。In addition, when the concentration of the processing liquid LQ reaches the target value while the substrate W is not immersed in the processing liquid LQ, the heater 143 raises the temperature of the processing liquid LQ to above the standard boiling point of the processing liquid LQ.
詳細而言，在未將基板W浸漬於處理液LQ之期間，加熱器143將供給至處理槽110且用以處理基板W之處理液LQ加熱至處理液LQ之標準沸點以上。即，在未將基板W浸漬於處理液LQ之期間，加熱器143將於配管141中流動之處理液LQ加熱至處理液LQ之標準沸點以上。進而，基板處理系統100B根據處理槽110中之控制條件，自稀釋液供給源TKB向處理槽110補充稀釋液，同時使處理液LQ之濃度達到目標值。Specifically, while the substrate W is not immersed in the processing liquid LQ, the heater 143 heats the processing liquid LQ supplied to the processing tank 110 and used to process the substrate W to a temperature higher than the standard boiling point of the processing liquid LQ. That is, while the substrate W is not immersed in the processing liquid LQ, the heater 143 heats the processing liquid LQ flowing in the pipe 141 to a temperature higher than the standard boiling point of the processing liquid LQ. Furthermore, the substrate processing system 100B replenishes the diluent from the diluent supply source TKB to the processing tank 110 according to the control conditions in the processing tank 110, and simultaneously makes the concentration of the processing liquid LQ reach the target value.
處理液LQ之標準沸點係於自處理液供給源TKA而非配管141向處理槽110重新供給之處理液LQ之濃度下的沸點。The standard boiling point of the treatment liquid LQ is the boiling point at the concentration of the treatment liquid LQ resupplied to the treatment tank 110 from the treatment liquid supply source TKA instead of the pipe 141 .
除此以外，在未將基板W浸漬於處理液LQ之期間，加熱器143與實施方式1之第1加熱器216同樣地進行動作。Except for this, while the substrate W is not immersed in the processing liquid LQ, the heater 143 operates in the same manner as the first heater 216 of the first embodiment.
調整閥145調節配管141之開度，以調整向複數個循環處理液供給構件130供給之處理液LQ之流量。閥146將配管141開閉。The adjustment valve 145 adjusts the opening of the pipe 141 to adjust the flow rate of the processing liquid LQ supplied to the plurality of circulating processing liquid supply members 130 . The valve 146 opens and closes the pipe 141.
測量部147對表示流經配管141之處理液LQ之濃度之物理量進行測量。表示處理液LQ之濃度之物理量之定義與實施方式1的情況相同。因此，測量部147為濃度計或比重計。再者，測量部147亦可對表示貯存於處理槽110(內槽112或外槽114)之處理液LQ之濃度之物理量進行測量。流經配管141之處理液LQ之濃度及溫度分別與貯存於處理槽110之處理液LQ之濃度及溫度大致相同。The measuring unit 147 measures a physical quantity indicating the concentration of the processing liquid LQ flowing through the pipe 141 . The definition of the physical quantity indicating the concentration of the treatment liquid LQ is the same as in the first embodiment. Therefore, the measuring part 147 is a concentration meter or a hydrometer. Furthermore, the measuring unit 147 may also measure a physical quantity indicating the concentration of the treatment liquid LQ stored in the treatment tank 110 (inner tank 112 or outer tank 114). The concentration and temperature of the processing liquid LQ flowing through the pipe 141 are substantially the same as the concentration and temperature of the processing liquid LQ stored in the processing tank 110 .
處理液供給部150包含噴嘴152、配管154及閥156。噴嘴152將處理液LQ噴出到外槽114。噴嘴152連接於配管154。向配管154供給來自處理液供給源TKA之處理液LQ。於配管154配置閥156。The processing liquid supply unit 150 includes a nozzle 152, a pipe 154, and a valve 156. The nozzle 152 sprays the processing liquid LQ into the outer tank 114 . The nozzle 152 is connected to the pipe 154 . The processing liquid LQ from the processing liquid supply source TKA is supplied to the pipe 154 . A valve 156 is provided in the pipe 154 .
當打開閥156時，自噴嘴152噴出之處理液LQ被供給至外槽114內。然後，處理液LQ自外槽114經過配管141由循環處理液供給構件130供給至內槽112。When the valve 156 is opened, the treatment liquid LQ sprayed from the nozzle 152 is supplied into the outer tank 114 . Then, the processing liquid LQ is supplied from the outer tank 114 to the inner tank 112 via the pipe 141 from the circulating processing liquid supply member 130 .
稀釋液供給部160包含噴嘴162、配管164及閥166。噴嘴162將稀釋液噴出至外槽114。噴嘴162連接於配管164。向配管164供給來自稀釋液供給源TKB之稀釋液。於配管164配置閥166。當打開閥166時，自噴嘴162噴出之稀釋液被供給至外槽114內。The diluent supply unit 160 includes a nozzle 162, a pipe 164, and a valve 166. The nozzle 162 sprays the diluent to the outer tank 114 . The nozzle 162 is connected to the pipe 164 . The diluent from the diluent supply source TKB is supplied to the pipe 164 . A valve 166 is provided in the pipe 164 . When the valve 166 is opened, the diluent sprayed from the nozzle 162 is supplied into the outer tank 114 .
例如，控制裝置U4有時為了使處理液LQ之濃度成為目標值，而基於測量部147之測量結果將閥166打開，自稀釋液供給源TKB向處理槽110供給稀釋液。For example, the control device U4 may open the valve 166 based on the measurement result of the measuring unit 147 to supply the diluent from the diluent supply source TKB to the treatment tank 110 so that the concentration of the processing liquid LQ reaches the target value.
排液部170包含排液配管170a及閥170b。而且，於處理槽110之內槽112之底壁連接排液配管170a。於排液配管170a配置閥170b。藉由打開閥170b，貯存於內槽112內之處理液LQ經過排液配管170a排出至外部。排出之處理液LQ被輸送至排液處理裝置(未圖示)，施以處理。The drain part 170 includes a drain pipe 170a and a valve 170b. Furthermore, a drain pipe 170a is connected to the bottom wall of the inner tank 112 of the treatment tank 110 . A valve 170b is provided in the drain pipe 170a. By opening the valve 170b, the treatment liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. The discharged treatment liquid LQ is sent to a discharge treatment device (not shown) and processed.
氣體供給單元280A配置於處理槽110之內部。具體而言，氣體供給單元280A包含至少1個氣體供給構件180及至少1個支持構件185。於實施方式3中，氣體供給單元280A包含複數個氣體供給構件180及複數個支持構件185。The gas supply unit 280A is arranged inside the treatment tank 110 . Specifically, the gas supply unit 280A includes at least one gas supply member 180 and at least one support member 185 . In Embodiment 3, the gas supply unit 280A includes a plurality of gas supply members 180 and a plurality of support members 185 .
複數個氣體供給構件180及複數個支持構件185配置於處理槽110之內部。詳細而言，複數個氣體供給構件180在處理槽110之內部配置於處理槽110之底部110a。具體而言，複數個氣體供給構件180配置於處理槽110之內槽112。詳細而言，複數個氣體供給構件180在內槽112之內部配置於內槽112之底部110a。A plurality of gas supply members 180 and a plurality of support members 185 are arranged inside the processing tank 110 . Specifically, the plurality of gas supply members 180 are arranged at the bottom 110 a of the processing tank 110 inside the processing tank 110 . Specifically, a plurality of gas supply members 180 are arranged in the inner tank 112 of the processing tank 110 . Specifically, the plurality of gas supply members 180 are arranged inside the inner tank 112 at the bottom 110 a of the inner tank 112 .
複數個氣體供給構件180各自由對應之支持構件185支持。具體而言，複數個氣體供給構件180各自被對應之支持構件185固定。因此，能夠抑制氣體供給構件180之變形。複數個支持構件185固定於處理槽110之底部110a。具體而言，複數個支持構件185固定於內槽112之底部110a。Each of the plurality of gas supply members 180 is supported by a corresponding support member 185 . Specifically, each of the plurality of gas supply members 180 is fixed by a corresponding support member 185 . Therefore, deformation of the gas supply member 180 can be suppressed. A plurality of support members 185 are fixed to the bottom 110a of the processing tank 110. Specifically, a plurality of supporting members 185 are fixed on the bottom 110a of the inner groove 112.
複數個氣體供給構件180各自具有大致筒形狀。各個氣體供給構件180例如為管。氣體供給構件180之材質例如為石英或樹脂。複數個氣體供給構件180各自具有流路FW0。Each of the plurality of gas supply members 180 has a substantially cylindrical shape. Each gas supply member 180 is a pipe, for example. The material of the gas supply member 180 is, for example, quartz or resin. Each of the plurality of gas supply members 180 has a flow path FW0.
氣體供給機構250將自氣體供給源263供給之氣體GA從配管261供給至各氣體供給構件180。除此以外，氣體供給機構250之構成與實施方式1之氣體供給機構250之構成相同。The gas supply mechanism 250 supplies the gas GA supplied from the gas supply source 263 from the pipe 261 to each gas supply member 180 . Otherwise, the structure of the gas supply mechanism 250 is the same as that of the gas supply mechanism 250 of Embodiment 1.
而且，氣體供給構件180對貯存於處理槽110(具體為內槽112)之處理液LQ供給氣體GA。具體而言，氣體供給構件180朝向上方，即，朝向處理液LQ之液面對處理液LQ供給氣體GA。於此情形時，氣體供給構件180將氣體GA以氣泡BB之形式供給至處理液LQ。氣體供給構件180例如為起泡器。Furthermore, the gas supply member 180 supplies the gas GA to the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112). Specifically, the gas supply member 180 supplies the gas GA to the processing liquid LQ upward, that is, toward the liquid surface of the processing liquid LQ. In this case, the gas supply member 180 supplies the gas GA in the form of bubbles BB to the processing liquid LQ. The gas supply member 180 is a bubbler, for example.
具體而言，在將基板W浸漬於處理液LQ中對基板W進行處理之期間，氣體供給構件180對貯存於處理槽110且較標準沸點低之規定溫度TM之處理液LQ供給氣體。Specifically, while the substrate W is immersed in the processing liquid LQ and the substrate W is processed, the gas supply member 180 supplies gas to the processing liquid LQ stored in the processing tank 110 and having a predetermined temperature TM lower than the standard boiling point.
又，在未將基板W浸漬於處理液LQ之期間，要使處理液LQ之濃度達到目標值時，氣體供給構件180對貯存於處理槽110且加熱至標準沸點以上之處理液LQ供給氣體GA。In addition, when the concentration of the processing liquid LQ reaches the target value while the substrate W is not immersed in the processing liquid LQ, the gas supply member 180 supplies the gas GA to the processing liquid LQ stored in the processing tank 110 and heated to a temperature higher than the standard boiling point. .
又，複數個氣體供給構件180各自進而具有複數個氣體供給口G。圖7中，對1個氣體供給構件180僅示出1個氣體供給口G。具體而言，複數個氣體供給構件180各自具有大致筒狀之突起182。而且，於突起182設置氣體供給口G。In addition, each of the plurality of gas supply members 180 further has a plurality of gas supply ports G. In FIG. 7 , only one gas supply port G is shown for each gas supply member 180 . Specifically, each of the plurality of gas supply members 180 has a substantially cylindrical protrusion 182 . Furthermore, the protrusion 182 is provided with a gas supply port G.
在將基板W浸漬於處理液LQ中對基板W進行處理之期間，氣體供給構件180朝向貯存於處理槽110(具體為內槽112)且維持於較標準沸點低之規定溫度TM之處理液LQ，自複數個氣體供給口G供給氣體GA。While the substrate W is immersed in the processing liquid LQ and the substrate W is processed, the gas supply member 180 is directed toward the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112 ) and maintained at a predetermined temperature TM lower than the standard boiling point. , the gas GA is supplied from the plurality of gas supply ports G.
又，在未將基板W浸漬於處理液LQ之期間，要使處理液LQ之濃度達到目標值時，氣體供給構件180朝向貯存於處理槽110(具體為內槽112)且加熱至標準沸點以上之處理液LQ，自複數個氣體供給口G供給氣體GA。具體而言，於此情形時，氣體供給構件180朝向貯存於處理槽110(具體為內槽112)且加熱至標準沸點以上之處理液LQ，自複數個氣體供給口G以複數個氣泡BB之形式供給氣體GA。In addition, when the concentration of the processing liquid LQ reaches the target value while the substrate W is not immersed in the processing liquid LQ, the gas supply member 180 is stored in the processing tank 110 (specifically, the inner tank 112) and heated to a temperature higher than the standard boiling point. The processing liquid LQ is supplied with gas GA from a plurality of gas supply ports G. Specifically, in this case, the gas supply member 180 faces the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112) and heated to above the standard boiling point, and supplies the gas supply member 180 with the plurality of bubbles BB from the plurality of gas supply ports G. The form supplies gas GA.
除此以外，氣體供給構件180及氣體供給口G之構成及動作與實施方式1之氣體供給構件281及氣體供給口G之構成及動作相同。Otherwise, the structure and operation of the gas supply member 180 and the gas supply port G are the same as those of the gas supply member 281 and the gas supply port G of the first embodiment.
排氣配管部270連接於處理槽110之上部。圖7之例中，排氣配管部270連接於蓋116。在將基板W浸漬於處理液LQ中對基板W進行處理之期間，排氣配管部270自處理槽110中排出氣體。The exhaust piping part 270 is connected to the upper part of the treatment tank 110 . In the example of FIG. 7 , the exhaust piping section 270 is connected to the cover 116 . While the substrate W is immersed in the processing liquid LQ and the substrate W is processed, the exhaust piping unit 270 exhausts gas from the processing tank 110 .
又，在未將基板W浸漬於處理液LQ之期間，要使處理液LQ之濃度達到目標值時，排氣配管部270自處理槽110(具體為內槽112)中排出水蒸氣及氣體。排出之氣體係自氣體供給構件180供給至處理液LQ中，並自處理液LQ之液面出來之氣體GA。又，排氣之水蒸氣係加熱至標準沸點以上之處理液LQ中所含之水分蒸發而產生，並自處理液LQ之液面出來之水蒸氣。排氣配管部270包含連結構件271及排氣配管273。除此以外，排氣配管部270之構成與實施方式1之排氣配管部270之構成相同。In addition, when the concentration of the processing liquid LQ reaches the target value while the substrate W is not immersed in the processing liquid LQ, the exhaust piping unit 270 discharges water vapor and gas from the processing tank 110 (specifically, the inner tank 112 ). The discharged gas system is supplied from the gas supply member 180 to the processing liquid LQ, and the gas GA comes out from the liquid surface of the processing liquid LQ. In addition, the water vapor in the exhaust gas is generated by the evaporation of water contained in the treatment liquid LQ heated above the standard boiling point, and is the water vapor that comes out from the liquid surface of the treatment liquid LQ. The exhaust piping section 270 includes a connecting member 271 and an exhaust piping 273 . Otherwise, the structure of the exhaust piping part 270 is the same as that of the exhaust piping part 270 of Embodiment 1.
控制裝置U4控制升降單元126、閥146、調整閥145、加熱器143、泵142、閥156、閥166、閥170b及氣體供給機構250。The control device U4 controls the lifting unit 126, the valve 146, the regulating valve 145, the heater 143, the pump 142, the valve 156, the valve 166, the valve 170b and the gas supply mechanism 250.
以上，如參照圖7所說明，根據實施方式3，在未將基板W浸漬於處理液LQ之期間，氣體供給構件180對利用加熱器143加熱至標準沸點以上之處理液LQ供給促進水分蒸發之氣體GA。藉此，促進了處理液LQ中之水分蒸發。其結果為，與不供給氣體GA之情況相比，能於處理槽110中使處理液LQ之濃度快速達到目標值。As described above, as described with reference to FIG. 7 , according to Embodiment 3, while the substrate W is not immersed in the processing liquid LQ, the gas supply member 180 supplies the processing liquid LQ heated to a standard boiling point or higher by the heater 143 to promote the evaporation of water. GasGA. Thereby, the evaporation of water in the treatment liquid LQ is accelerated. As a result, compared with the case where gas GA is not supplied, the concentration of the treatment liquid LQ in the treatment tank 110 can be quickly reached the target value.
又，於實施方式3中，在未將基板W浸漬於處理液LQ之期間，氣體供給構件180對處理槽110之處理液LQ供給氣體GA之氣泡BB。因此，與實施方式1同樣，藉由朝處理液LQ之液面上升之氣泡BB，能夠進一步促進處理液LQ中之水分蒸發。除此以外，於實施方式3中，具有與實施方式1相同之效果。Furthermore, in Embodiment 3, while the substrate W is not immersed in the processing liquid LQ, the gas supply member 180 supplies the bubbles BB of the gas GA to the processing liquid LQ in the processing tank 110 . Therefore, like Embodiment 1, the evaporation of water in the processing liquid LQ can be further accelerated by the bubbles BB rising toward the liquid surface of the processing liquid LQ. Otherwise, Embodiment 3 has the same effects as Embodiment 1.
又，於實施方式3中，較佳為處理液LQ係「含有磷酸之液體」。此方面與實施方式1相同。Moreover, in Embodiment 3, it is preferable that the processing liquid LQ is a "liquid containing phosphoric acid". This aspect is the same as Embodiment 1.
尤其是於實施方式3中，較佳為在未將基板W浸漬於處理液LQ之期間，加熱器143在貯存於處理槽110之處理液LQ之一部分或全部被排出，將處理液LQ之一部分或全部替換成新的處理液LQ之後，將處理液LQ加熱至標準沸點以上。新的處理液LQ與由處理液供給源TKA供給且自配管141供給之處理液不同。再者，較佳為在未將基板W浸漬於處理液LQ之期間，各氣體供給構件180在貯存於處理槽110之處理液LQ之一部分或全部被排出，將處理液LQ之一部分或全部替換成新的處理液LQ之後，向貯存於處理槽110之處理液LQ供給氣體。Particularly in Embodiment 3, it is preferable that the heater 143 discharges part or all of the processing liquid LQ stored in the processing tank 110 while the substrate W is not immersed in the processing liquid LQ. Or after completely replacing it with a new treatment liquid LQ, heat the treatment liquid LQ above the standard boiling point. The new processing liquid LQ is different from the processing liquid supplied from the processing liquid supply source TKA and supplied from the pipe 141 . Furthermore, when the substrate W is not immersed in the processing liquid LQ, it is preferable that each gas supply member 180 discharges part or all of the processing liquid LQ stored in the processing tank 110 to replace part or all of the processing liquid LQ. After the new processing liquid LQ is generated, the gas is supplied to the processing liquid LQ stored in the processing tank 110 .
於該等較佳之例中，能夠在貯存於處理槽110之處理液LQ之一部分或全部被排出，將處理液LQ之一部分或全部替換成新的處理液LQ之後，使處理液LQ之濃度快速達到目標值。其結果為，能夠提高基板處理系統100B之運轉率。In these preferred examples, after part or all of the treatment liquid LQ stored in the treatment tank 110 is discharged and part or all of the treatment liquid LQ is replaced with a new treatment liquid LQ, the concentration of the treatment liquid LQ can be quickly increased. reach the target value. As a result, the operation rate of the substrate processing system 100B can be improved.
例如，於降低處理槽110之處理液LQ中特定成分(例如矽)之濃度之情形時，貯存於處理槽110之處理液LQ之一部分被排出，將處理液LQ之一部分替換成新的處理液LQ。For example, when the concentration of a specific component (such as silicon) in the treatment liquid LQ of the treatment tank 110 is reduced, a part of the treatment liquid LQ stored in the treatment tank 110 is discharged, and a part of the treatment liquid LQ is replaced with a new treatment liquid. LQ.
例如，於對處理槽110進行洗淨之情形時，貯存於處理槽110之處理液LQ之全部被排出，將處理液LQ之全部替換成新的處理液LQ。For example, when the treatment tank 110 is cleaned, all the treatment liquid LQ stored in the treatment tank 110 is discharged, and all the treatment liquid LQ is replaced with a new treatment liquid LQ.
又，於實施方式3中，在將基板W浸漬於處理液LQ中對基板W進行處理之期間，各氣體供給構件180藉由自複數個氣體供給口G向處理液LQ吹出氣體GA，而自複數個氣體供給口G朝向浸漬於處理液LQ之複數個基板W供給複數個氣泡BB。因此，藉由大量氣泡BB，能有效地將與各基板W表面接觸之處理液LQ替換成新鮮之處理液LQ。其結果為，於基板W之表面形成有包含凹部之表面圖案時，能藉由擴散現象有效地將凹部內之處理液LQ替換成新鮮之處理液LQ。由此，能有效利用處理液LQ針對表面圖案之凹部內之壁面自較淺位置至較深位置進行處理。Furthermore, in Embodiment 3, while the substrate W is immersed in the processing liquid LQ and the substrate W is processed, each gas supply member 180 blows the gas GA from the plurality of gas supply ports G to the processing liquid LQ, thereby self-containing the gas GA. The plurality of gas supply ports G supply the plurality of bubbles BB toward the plurality of substrates W immersed in the processing liquid LQ. Therefore, a large number of bubbles BB can effectively replace the processing liquid LQ in contact with the surface of each substrate W with a fresh processing liquid LQ. As a result, when a surface pattern including recessed portions is formed on the surface of the substrate W, the processing liquid LQ in the recessed portions can be effectively replaced with a fresh processing liquid LQ through the diffusion phenomenon. Thereby, the treatment liquid LQ can be effectively used to process the wall surface in the concave portion of the surface pattern from a shallower position to a deeper position.
接下來，參照圖8對將基板W浸漬於處理槽110之前及之後的基板處理系統100B進行說明。圖8(a)及圖8(b)係將基板W放入至處理槽110之前及之後的基板處理系統100B之模式性立體圖。再者，圖8中，為了避免圖式過於複雜，而將圖7所示之蓋116及處理槽110內之處理液LQ省略而示出。Next, the substrate processing system 100B before and after the substrate W is immersed in the processing tank 110 will be described with reference to FIG. 8 . 8(a) and 8(b) are schematic perspective views of the substrate processing system 100B before and after the substrate W is put into the processing tank 110. Furthermore, in FIG. 8 , in order to avoid overly complicating the diagram, the cover 116 and the processing liquid LQ in the processing tank 110 shown in FIG. 7 are omitted and shown.
如圖8(a)所示，基板保持部120保持複數個基板W。複數個基板W沿著第1方向D10(Y方向)排成一排。換言之，第1方向D10表示複數個基板W之排列方向。第1方向D10與水平方向大致平行。又，複數個基板W各自與第2方向D20大致平行。第2方向D20與第1方向D10大致正交，與水平方向大致平行。As shown in FIG. 8(a) , the substrate holding unit 120 holds a plurality of substrates W. A plurality of substrates W are arranged in a row along the first direction D10 (Y direction). In other words, the first direction D10 represents the arrangement direction of the plurality of substrates W. The first direction D10 is substantially parallel to the horizontal direction. In addition, each of the plurality of substrates W is substantially parallel to the second direction D20. The second direction D20 is substantially orthogonal to the first direction D10 and substantially parallel to the horizontal direction.
圖8(a)中，基板保持部120位於處理槽110之內槽112之上方。基板保持部120保持著複數個基板W向鉛直下方(Z方向)下降。藉此，將複數個基板W放入至處理槽110。In FIG. 8( a ), the substrate holding portion 120 is located above the inner tank 112 of the processing tank 110 . The substrate holding part 120 holds the plurality of substrates W and moves downward vertically (Z direction). Thereby, a plurality of substrates W are put into the processing tank 110 .
如圖8(b)所示，當基板保持部120下降至處理槽110時，複數個基板W浸漬於處理槽110內之處理液LQ。再者，圖8(b)中雖未圖示，但如圖7所示，內槽112之上部開口被蓋116蓋住。As shown in FIG. 8( b ), when the substrate holding part 120 descends to the processing tank 110 , a plurality of substrates W are immersed in the processing liquid LQ in the processing tank 110 . Furthermore, although not shown in FIG. 8( b ), as shown in FIG. 7 , the upper opening of the inner groove 112 is covered by the cover 116 .
接下來，參照圖9對氣體供給單元280A進行說明。圖9係表示氣體供給單元280A之模式性俯視圖。如圖9所示，氣體供給單元280A之氣體供給構件180及循環處理液供給構件130於俯視下大致相互平行，且隔開間隔配置。俯視下，2個循環處理液供給構件130中之一個配置於2個氣體供給構件180之間。又，俯視下，2個循環處理液供給構件130中之另一個配置於另外2個氣體供給構件180之間。進而，俯視下，4個氣體供給構件180中之中間2個氣體供給構件180於第2方向D20上對向。Next, the gas supply unit 280A will be described with reference to FIG. 9 . FIG. 9 is a schematic plan view of the gas supply unit 280A. As shown in FIG. 9 , the gas supply member 180 and the circulating processing liquid supply member 130 of the gas supply unit 280A are substantially parallel to each other in plan view and are arranged at intervals. When viewed from above, one of the two circulating processing liquid supply members 130 is disposed between the two gas supply members 180 . In addition, in plan view, the other of the two circulating processing liquid supply members 130 is disposed between the other two gas supply members 180 . Furthermore, in a plan view, the middle two gas supply members 180 among the four gas supply members 180 face each other in the second direction D20.
具體而言，複數個循環處理液供給構件130於處理槽110(具體為內槽112)中大致相互平行，且於第2方向D20上隔開間隔配置。循環處理液供給構件130沿第1方向D10延伸。於複數個循環處理液供給構件130之各者中，複數個處理液噴出口P在第1方向D10上隔開間隔配置於大致一直線上。Specifically, the plurality of circulating processing liquid supply members 130 are substantially parallel to each other in the processing tank 110 (specifically, the inner tank 112), and are arranged at intervals in the second direction D20. The circulating processing liquid supply member 130 extends in the first direction D10. In each of the plurality of circulating processing liquid supply members 130, the plurality of processing liquid ejection ports P are arranged on a substantially straight line at intervals in the first direction D10.
複數個氣體供給構件180於處理槽110(具體為內槽112)中大致相互平行，且於第2方向D20上隔開間隔配置。氣體供給構件180沿第1方向D10延伸。於複數個氣體供給構件180之各者中，複數個氣體供給口G於第1方向D10上隔開間隔配置於大致一直線上。於複數個氣體供給構件180之各者中，各氣體供給口G設置於氣體供給構件180之上表面部。而且，各氣體供給口G於處理槽110(具體為內槽112)之底部110a朝上方供給氣泡BB。再者，只要能自氣體供給口G供給氣泡BB，則氣體供給口G之位置無特別限定。又，於複數個氣體供給構件180中，複數個氣體供給口G可等間隔配置，亦可非等間隔配置。The plurality of gas supply members 180 are substantially parallel to each other in the processing tank 110 (specifically, the inner tank 112) and are arranged at intervals in the second direction D20. The gas supply member 180 extends in the first direction D10. In each of the plurality of gas supply members 180, the plurality of gas supply ports G are arranged on a substantially straight line at intervals in the first direction D10. In each of the plurality of gas supply members 180 , each gas supply port G is provided on an upper surface portion of the gas supply member 180 . Furthermore, each gas supply port G supplies bubbles BB upward from the bottom 110a of the treatment tank 110 (specifically, the inner tank 112). In addition, as long as bubbles BB can be supplied from the gas supply port G, the position of the gas supply port G is not particularly limited. In addition, in the plurality of gas supply members 180, the plurality of gas supply ports G may be arranged at equal intervals or may be arranged at non-equal intervals.
複數個氣體供給構件180各自具有第1端部180a及第2端部180b。第1端部180a係第1方向D10上之氣體供給構件180之兩端部中之一端部。第2端部180b係第1方向D10上之氣體供給構件180之兩端部中之另一端部。Each of the plurality of gas supply members 180 has a first end 180a and a second end 180b. The first end 180a is one of both ends of the gas supply member 180 in the first direction D10. The second end 180b is the other end of the two ends of the gas supply member 180 in the first direction D10.
於第1端部180a連接配管261。因此，氣體供給機構250將由氣體供給源263供給之氣體GA自配管261供給至各氣體供給構件180。第2端部180b被封閉。除此以外，氣體供給構件180之構成與實施方式1之氣體供給構件281之構成相同。The pipe 261 is connected to the first end 180a. Therefore, the gas supply mechanism 250 supplies the gas GA supplied from the gas supply source 263 from the pipe 261 to each gas supply member 180 . The second end 180b is closed. Otherwise, the structure of the gas supply member 180 is the same as the structure of the gas supply member 281 of Embodiment 1.
複數個支持構件185於處理槽110(具體為內槽112)中大致相互平行，且於第2方向D20上隔開間隔配置。支持構件185沿第1方向D10延伸。支持構件185於圖9之例中具有大致平板形狀。位於氣體供給單元280A之第2方向D20一端之支持構件185支持1個氣體供給構件180，位於另一端之支持構件185支持1個氣體供給構件180。中間之支持構件185支持2個氣體供給構件180。The plurality of support members 185 are substantially parallel to each other in the processing tank 110 (specifically, the inner tank 112) and are arranged at intervals in the second direction D20. The support member 185 extends in the first direction D10. The support member 185 has a substantially flat plate shape in the example of FIG. 9 . The support member 185 located at one end of the gas supply unit 280A in the second direction D20 supports one gas supply member 180 , and the support member 185 located at the other end supports one gas supply member 180 . The middle support member 185 supports the two gas supply members 180 .
接下來，參照圖8及圖10對本發明之實施方式3之基板處理方法進行說明。圖10係表示實施方式31之基板處理方法之流程圖。如圖10所示，基板處理方法包括步驟S41～步驟S51。基板處理方法係藉由基板處理系統100B來執行。而且，基板處理方法係將隔開間隔排列之複數個基板W浸漬於貯存在處理槽110之處理液LQ中，利用處理液LQ對複數個基板W進行處理。又，步驟S41～步驟S47相當於「處理液溫度調整方法」之一例。Next, a substrate processing method according to Embodiment 3 of the present invention will be described with reference to FIGS. 8 and 10 . FIG. 10 is a flowchart showing the substrate processing method according to Embodiment 31. As shown in FIG. 10 , the substrate processing method includes steps S41 to S51. The substrate processing method is performed by the substrate processing system 100B. Furthermore, in the substrate processing method, a plurality of substrates W arranged at intervals are immersed in a processing liquid LQ stored in the processing tank 110, and the plurality of substrates W are processed using the processing liquid LQ. In addition, steps S41 to S47 correspond to an example of the "processing liquid temperature adjustment method."
如圖8及圖10所示，於步驟S41中，控制裝置U4判定溫度調整時點是否到來。溫度調整時點係在未將基板W浸漬於處理液LQ之期間，將貯存於處理槽110之處理液LQ之一部分或全部排出，並將處理液LQ之一部分或全部替換成新的處理液LQ之後的時點。As shown in Figures 8 and 10, in step S41, the control device U4 determines whether the temperature adjustment time has arrived. The temperature adjustment timing is after the substrate W is not immersed in the processing liquid LQ, part or all of the processing liquid LQ stored in the processing tank 110 is discharged, and part or all of the processing liquid LQ is replaced with a new processing liquid LQ. time point.
當於步驟S41中判定為溫度調整時點未到來時，處理反覆進行步驟S41直至判定為溫度調整時點到來。When it is determined in step S41 that the temperature adjustment time has not arrived, the process repeats step S41 until it is determined that the temperature adjustment time has arrived.
另一方面，當於步驟S41中判定為溫度調整時點已到來時，處理進入步驟S42。On the other hand, when it is determined in step S41 that the temperature adjustment time has arrived, the process proceeds to step S42.
於步驟S42中，藉由控制裝置U4之控制，加熱器143開始處理液LQ之加熱。具體而言，加熱器143將用以處理基板W之處理液LQ加熱至處理液LQ之標準沸點以上。In step S42, under the control of the control device U4, the heater 143 starts heating the treatment liquid LQ. Specifically, the heater 143 heats the processing liquid LQ used to process the substrate W to a temperature higher than the standard boiling point of the processing liquid LQ.
接下來，於步驟S43中，藉由利用控制裝置U4對氣體供給機構250進行控制，各氣體供給構件180開始對貯存於處理槽110之處理液LQ供給氣體GA(具體為氣泡BB)。即，各氣體供給構件180將促進水分自加熱至標準沸點以上之處理液LQ中蒸發之氣體GA(具體為氣泡BB)供給至貯存於處理槽110之處理液LQ。Next, in step S43, by controlling the gas supply mechanism 250 using the control device U4, each gas supply member 180 starts supplying the gas GA (specifically, bubbles BB) to the processing liquid LQ stored in the processing tank 110. That is, each gas supply member 180 supplies gas GA (specifically, bubbles BB) that promotes evaporation of moisture from the treatment liquid LQ heated to a temperature higher than the standard boiling point to the treatment liquid LQ stored in the treatment tank 110 .
接下來，於步驟S44中，排氣配管部270將自處理槽110之處理液LQ之液面出來之水蒸氣及氣體GA排出。即，排氣配管部270自處理槽110中排出水蒸氣及氣體GA。再者，始終持續利用排氣配管部270自處理槽110中排氣，不限於水蒸氣及氣體GA之排出。Next, in step S44, the exhaust piping unit 270 discharges the water vapor and gas GA emerging from the liquid surface of the processing liquid LQ in the processing tank 110. That is, the exhaust piping section 270 discharges water vapor and gas GA from the treatment tank 110 . Furthermore, the exhaust piping section 270 is continuously used to exhaust gas from the treatment tank 110, and is not limited to the exhaust of water vapor and gas GA.
接下來，於步驟S45中，控制裝置U4基於測量部147之測量結果判定處理液LQ之濃度是否達到目標值。Next, in step S45, the control device U4 determines whether the concentration of the processing liquid LQ reaches the target value based on the measurement result of the measuring unit 147.
當於步驟S45中判定為處理液LQ之濃度未達到目標值時，處理反覆進行步驟S45直至判定為處理液LQ之濃度達到目標值。When it is determined in step S45 that the concentration of the treatment liquid LQ has not reached the target value, the process repeats step S45 until it is determined that the concentration of the treatment liquid LQ has reached the target value.
另一方面，當於步驟S45中判定為處理液LQ之濃度已達到目標值時，處理進入步驟S46。On the other hand, when it is determined in step S45 that the concentration of the treatment liquid LQ has reached the target value, the process proceeds to step S46.
於步驟S46中，藉由控制裝置U4之控制，加熱器143調節貯存於處理槽110之處理液LQ之溫度，間接使處理液LQ之濃度維持於目標值。即，加熱器143調節於配管141中流動之處理液LQ之溫度，間接使處理液LQ之濃度維持於目標值。具體而言，加熱器143使處理液LQ之溫度維持於標準沸點以上之規定溫度。而且，在處理液LQ之溫度維持於標準沸點以上之規定溫度之狀態下，基於測量部147之測量結果，經過閥166、配管164及噴嘴162自稀釋液供給源TKB向處理槽110供給稀釋液，藉此處理液LQ之濃度維持於目標值。In step S46, under the control of the control device U4, the heater 143 adjusts the temperature of the treatment liquid LQ stored in the treatment tank 110, thereby indirectly maintaining the concentration of the treatment liquid LQ at the target value. That is, the heater 143 adjusts the temperature of the processing liquid LQ flowing in the pipe 141 and indirectly maintains the concentration of the processing liquid LQ at the target value. Specifically, the heater 143 maintains the temperature of the treatment liquid LQ at a predetermined temperature higher than the standard boiling point. Furthermore, while the temperature of the processing liquid LQ is maintained at a predetermined temperature higher than the standard boiling point, based on the measurement result of the measuring unit 147, the diluent is supplied from the diluent supply source TKB to the processing tank 110 via the valve 166, the pipe 164, and the nozzle 162. , whereby the concentration of the treatment liquid LQ is maintained at the target value.
接下來，於步驟S47中，藉由利用控制裝置U4對氣體供給機構250進行控制，各氣體供給構件180停止對貯存於處理槽110之處理液LQ供給氣體GA(具體為氣泡BB)。Next, in step S47, by controlling the gas supply mechanism 250 using the control device U4, each gas supply member 180 stops supplying the gas GA (specifically, the bubbles BB) to the processing liquid LQ stored in the processing tank 110.
接下來，於步驟S48中，控制裝置U4判定是否於複數個處理槽110中之任一處理槽110內，基板浸漬時點到來。基板浸漬時點係將基板W浸漬於處理液LQ之時點。Next, in step S48, the control device U4 determines whether the substrate immersion timing has arrived in any one of the plurality of processing tanks 110. The substrate immersion timing is the timing when the substrate W is immersed in the processing liquid LQ.
當於步驟S48中判定為基板浸漬時點未到來時，處理反覆進行步驟S48直至判定為基板浸漬時點到來。If it is determined in step S48 that the substrate immersion timing has not arrived, the process repeats step S48 until it is determined that the substrate immersion timing has arrived.
另一方面，當於步驟S48中判定為基板浸漬時點已到來時，處理進入步驟S49。On the other hand, when it is determined in step S48 that the substrate immersion timing has arrived, the process proceeds to step S49.
於步驟S49中，藉由控制裝置U4之控制，搬送機械手(未圖示)將基板W搬送至基板保持部120，進而，基板保持部120將複數個基板W浸漬於處理槽110之處理液LQ中，利用處理液LQ對複數個基板W進行處理。In step S49, under the control of the control device U4, the transport robot (not shown) transports the substrate W to the substrate holding part 120. Furthermore, the substrate holding part 120 immerses the plurality of substrates W in the processing liquid of the processing tank 110. In LQ, a plurality of substrates W are processed using the processing liquid LQ.
接下來，於步驟S50中，藉由利用控制裝置U4對氣體供給機構250進行控制，各氣體供給構件180向在處理槽110中浸漬於處理液LQ之複數個基板W供給氣體GA(具體為氣泡BB)。Next, in step S50, by controlling the gas supply mechanism 250 using the control device U4, each gas supply member 180 supplies the gas GA (specifically, bubbles) to the plurality of substrates W immersed in the processing liquid LQ in the processing tank 110. BB).
接下來，於步驟S51中，藉由控制裝置U4之控制，基板保持部120自處理槽110之處理液LQ中提拉出複數個基板W，進而，搬送機械手(未圖示)自基板保持部120接受基板W將其搬送。然後，基板處理方法結束。Next, in step S51, under the control of the control device U4, the substrate holding part 120 pulls out a plurality of substrates W from the processing liquid LQ of the processing tank 110, and further, the transport robot (not shown) holds the substrates from the processing liquid LQ. The unit 120 receives the substrate W and transports it. Then, the substrate processing method ends.
以上，如參照圖10所說明，於實施方式3之基板處理方法中，將貯存於處理槽110之處理液LQ加熱至標準沸點以上，與此並行地執行對貯存於處理槽110之處理液LQ供給促進水分蒸發之氣體GA之處理、及自處理槽110中排出水蒸氣及氣體GA之處理。因此，能夠促進水分自處理液LQ中蒸發，使處理液LQ之濃度快速達到目標值。As described above with reference to FIG. 10 , in the substrate processing method of Embodiment 3, the processing liquid LQ stored in the processing tank 110 is heated to or above the standard boiling point, and in parallel with this, the processing liquid LQ stored in the processing tank 110 is heated. A process of supplying gas GA that promotes the evaporation of moisture, and a process of discharging water vapor and gas GA from the treatment tank 110 . Therefore, the evaporation of water from the treatment liquid LQ can be promoted, so that the concentration of the treatment liquid LQ can quickly reach the target value.
接下來，基於實施例對本發明具體進行說明，但本發明不由以下實施例限定。 [實施例]Next, the present invention will be specifically described based on examples, but the present invention is not limited by the following examples. [Example]
參照圖7及圖11對本發明之實施例1、實施例2及比較例進行說明。於實施例1及實施例2中，使用參照圖7所說明之基板處理系統100B。於比較例中，對參照圖7所說明之基板處理系統100B加上限制而使用。Example 1, Example 2 and comparative examples of the present invention will be described with reference to FIGS. 7 and 11 . In Embodiment 1 and Embodiment 2, the substrate processing system 100B described with reference to FIG. 7 is used. In the comparative example, the substrate processing system 100B described with reference to FIG. 7 is used with restrictions.
於實施例1、實施例2及比較例中，利用加熱器143將處理液LQ加熱至標準沸點以上。處理液LQ為磷酸水溶液。處理槽110之蓋116關閉。In Example 1, Example 2 and Comparative Example, the heater 143 is used to heat the treatment liquid LQ to a temperature higher than the standard boiling point. The treatment liquid LQ is a phosphoric acid aqueous solution. The cover 116 of the treatment tank 110 is closed.
於實施例1中，自氣體供給機構250供給至4個氣體供給構件180之氣體GA之流量，即，供給至加熱至標準沸點以上之溫度之處理液LQ之氣體GA的流量為13升/分鐘。氣體GA為氮氣。In Example 1, the flow rate of the gas GA supplied from the gas supply mechanism 250 to the four gas supply members 180, that is, the flow rate of the gas GA supplied to the processing liquid LQ heated to a temperature above the standard boiling point is 13 liters/minute. . Gas GA is nitrogen.
於實施例2中，自氣體供給機構250供給至4個氣體供給構件180之氣體GA之流量，即，供給至加熱至標準沸點以上之溫度之處理液LQ之氣體GA的流量為20升/分鐘。氣體GA為氮氣。In Example 2, the flow rate of the gas GA supplied from the gas supply mechanism 250 to the four gas supply members 180, that is, the flow rate of the gas GA supplied to the processing liquid LQ heated to a temperature above the standard boiling point, is 20 liters/minute. . Gas GA is nitrogen.
於比較例中，不對加熱至標準沸點以上之溫度之處理液LQ供給氣體GA。In the comparative example, the gas GA is not supplied to the treatment liquid LQ heated to a temperature above the standard boiling point.
於實施例1、實施例2及比較例中，利用稀釋液供給部160以0.3升/分鐘之流量持續補充純水。然後，利用測量部147測量處理液LQ之比重。測量部147不測量於配管141中循環之處理液LQ之比重，而測量內槽112之處理液LQ之比重。基於比重之測量結果，確認實施例1、實施例2及比較例中之純水蒸發能力。純水蒸發能力係能使純水之水分自處理液LQ中蒸發之能力。由於以固定流量補充純水，故而可推測若純水蒸發能力較高，則處理液LQ之比重維持固定，若純水蒸發能力較低，則處理液LQ之比重不維持固定。In Example 1, Example 2 and Comparative Example, the diluent supply part 160 was used to continuously replenish pure water at a flow rate of 0.3 liters/minute. Then, the measurement unit 147 measures the specific gravity of the treatment liquid LQ. The measuring unit 147 does not measure the specific gravity of the processing liquid LQ circulating in the pipe 141 but measures the specific gravity of the processing liquid LQ in the inner tank 112 . Based on the measurement results of specific gravity, the pure water evaporation capabilities in Example 1, Example 2 and Comparative Example were confirmed. The pure water evaporation ability is the ability to evaporate the moisture of pure water from the treatment liquid LQ. Since pure water is replenished at a fixed flow rate, it can be inferred that if the pure water evaporation capacity is high, the specific gravity of the treatment liquid LQ remains fixed, and if the pure water evaporation capacity is low, the specific gravity of the treatment liquid LQ does not remain fixed.
圖11係表示本發明之實施例1、實施例2及比較例之處理液LQ之比重值之時間變化之曲線圖。於圖11中，橫軸表示時間，縱軸表示比重值。FIG. 11 is a graph showing the time change of the specific gravity value of the treatment liquid LQ in Example 1, Example 2 and Comparative Example of the present invention. In Figure 11, the horizontal axis represents time, and the vertical axis represents specific gravity value.
如圖11所示，曲線PL1表示實施例1中測量出之處理液LQ之比重值。曲線PL2表示實施例2中測量出之處理液LQ之比重值。曲線PL3表示比較例中測量出之處理液LQ之比重值。As shown in FIG. 11 , curve PL1 represents the specific gravity value of the treatment liquid LQ measured in Example 1. Curve PL2 represents the specific gravity value of the treatment liquid LQ measured in Example 2. Curve PL3 represents the specific gravity value of the treatment liquid LQ measured in the comparative example.
於比較例中，如曲線PL3所示，處理液LQ之比重值不停減少，於自純水補充開始起經過數十分鐘之時間t0，利用加熱器143進行之溫度調整動作停止。可推測其原因如下。即，於比較例中，由於純水蒸發能力較低，故而處理液LQ之濃度變低，處理液LQ之沸點變低。其結果為，處理液LQ爆沸，產生大量水蒸氣，加熱器143過熱。由此導致利用加熱器143進行之溫度調整動作停止。In the comparative example, as shown in the curve PL3, the specific gravity value of the treatment liquid LQ continues to decrease, and the temperature adjustment operation by the heater 143 stops after a time t0 of several tens of minutes from the start of pure water replenishment. The reason for this can be speculated as follows. That is, in the comparative example, since the evaporation ability of pure water is low, the concentration of the treatment liquid LQ becomes low, and the boiling point of the treatment liquid LQ becomes low. As a result, the treatment liquid LQ explodes, a large amount of water vapor is generated, and the heater 143 becomes overheated. As a result, the temperature adjustment operation by the heater 143 is stopped.
與此相對，於實施例1及實施例2中，儘管持續補充純水，但於時間t0以後，處理液LQ之比重值於沸騰附近基本穩定且大致固定。因此，可確認於實施例1及實施例2中，純水蒸發能力高於比較例。即，可確認，藉由對加熱至標準沸點以上之溫度之處理液LQ供給氣體GA，能夠提高純水蒸發能力。可推測，於實施例1及實施例2中，由於純水蒸發能力提高，故而與比較例相比能使處理液LQ之濃度更快達到目標值。On the other hand, in Examples 1 and 2, although the pure water was continuously replenished, the specific gravity value of the treatment liquid LQ was basically stable and almost fixed near boiling after time t0. Therefore, it was confirmed that in Example 1 and Example 2, the pure water evaporation capacity was higher than that in the comparative example. That is, it was confirmed that by supplying the gas GA to the treatment liquid LQ heated to a temperature higher than the standard boiling point, the pure water evaporation capability can be improved. It can be speculated that in Examples 1 and 2, the concentration of the treatment liquid LQ can reach the target value faster than in the comparative example because the pure water evaporation capacity is improved.
尤其是於氣體GA之流量較多之實施例2中，處理液LQ之比重值較實施例1更穩定。Especially in Example 2 with a larger flow rate of gas GA, the specific gravity value of the treatment liquid LQ is more stable than in Example 1.
以上，參照圖式對本發明之實施方式及實施例進行了說明。但是，本發明不限於上述實施方式及實施例，可於不脫離其主旨之範圍內於各種形態中實施。又，可適當改變上述實施方式中揭示之複數個構成要素。例如，可將某實施方式中示出之所有構成要素中之某構成要素追加至另一實施方式之構成要素中，或者亦可將某實施方式中示出之所有構成要素中之若干構成要素自實施方式中省去。Hereinabove, the embodiments and examples of the present invention have been described with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiments and examples, and can be implemented in various forms within the scope without departing from the gist of the invention. In addition, the plurality of components disclosed in the above-mentioned embodiments may be appropriately changed. For example, some of all the constituent elements shown in a certain embodiment may be added to the constituent elements of another embodiment, or some of all the constituent elements shown in a certain embodiment may be added to the constituent elements of another embodiment. Omitted in the implementation.
又，圖式係為了便於理解發明，而於本體中模式性地示出各個構成要素，圖示之各構成要素之厚度、長度、個數、間隔等有時亦會為了便於製作圖式而與實際不同。又，不言而喻上述實施方式中示出之各構成要素之構成為一例，無特別限定，可於實質上不脫離本發明效果之範圍內進行各種變更。 [產業上之可利用性]In addition, the drawings schematically show each constituent element in the main body in order to facilitate understanding of the invention. The thickness, length, number, spacing, etc. of each constituent element shown in the illustrations may sometimes be different from those in order to facilitate the preparation of the drawings. Actual differences. In addition, it goes without saying that the configuration of each component shown in the above embodiment is an example and is not particularly limited, and various changes can be made within the scope that does not substantially depart from the effects of the present invention. [Industrial availability]
本發明係關於一種處理液溫度調整方法、基板處理方法、處理液溫度調整裝置、及基板處理系統，具有產業上之可利用性。The present invention relates to a processing liquid temperature adjustment method, a substrate processing method, a processing liquid temperature adjustment device, and a substrate processing system, and has industrial applicability.
1:基板處理部 1A:基板處理部 3:處理槽 5:冷卻槽 9:閥 11:閥 31:內槽 33:外槽 100:基板處理系統 100A:基板處理系統 100B:基板處理系統(處理液溫度調整裝置) 110:處理槽(第1貯存槽) 110a:底部 112:內槽 114:外槽 116:蓋 116a:開門部 116b:開門部 120:基板保持部 122:本體板 124:保持棒 126:升降單元 130:循環處理液供給構件 140:循環部 141:配管 142:泵 143:加熱器(第1溫度調整部) 144:過濾器 145:調整閥 146:閥 147:測量部 150:處理液供給部 152:噴嘴 154:配管 156:閥 160:稀釋液供給部 162:噴嘴 164:配管 166:閥 170:排液部 170a:排液配管 170b:閥 180:氣體供給構件 180a:第1端部 180b:第2端部 182:突起 185:支持構件 200:第1溫度調整單元 210:第1貯存槽 212:第1測量部 214:閥 215:第1過濾器 216:第1加熱器(第1溫度調整部) 218:第1泵 220:閥 221:流量調整閥 222:閥 223:閥 224:閥 230:槽本體 230a:底部 240:蓋 250:氣體供給機構 251:閥 253:過濾器 257:流量計 259:調整閥 261:配管 263:氣體供給源 270:排氣配管部 271:連結構件 273:排氣配管 275:流路 280:氣體供給單元 280A:氣體供給單元 281:氣體供給構件 281a:第1端部 281b:第2端部 283:第1配管 285:第2配管 287:第1保持構件 289:第2保持構件 291:第1固定構件 293:第2固定構件 300:第2溫度調整單元 310:第2貯存槽 312:第2測量部 314:閥 315:第2過濾器 316:第2加熱器(第2溫度調整部) 318:第2泵 310:第2貯存槽 320:閥 350:冷卻槽 391:流量計 392:流量調整閥 400:腔室 401:噴嘴 402:旋轉夾頭 403:旋轉馬達 404:承杯 FW0:流路 FW1:流路 FW2:流路 BB:氣泡 G:氣體供給口 GA:氣體 LQ:處理液 p:處理液噴出口 P1:配管 P2:配管 P3:配管 P4:配管 P5:配管 P6:第1循環配管 P7:配管 P8:配管 P9:第2循環配管 P10:配管 TKA:處理液供給源 TKB:稀釋液供給源 U1:處理裝置 U1A:處理裝置 U2:處理液溫度調整裝置 U3:冷卻槽群 U4:控制裝置 W:基板1:Substrate processing department 1A: Substrate processing department 3: Processing tank 5: Cooling tank 9: valve 11:Valve 31:Inner tank 33:Outer tank 100:Substrate processing system 100A: Substrate handling system 100B: Substrate processing system (processing liquid temperature adjustment device) 110: Processing tank (1st storage tank) 110a: Bottom 112:Inner tank 114:Outer tank 116: cover 116a:Open the door 116b:Open the door 120:Substrate holding part 122:Body board 124:keep the stick 126:Lifting unit 130: Circulating liquid supply component 140:Circulation Department 141:Piping 142:Pump 143: Heater (first temperature adjustment part) 144:Filter 145:Adjusting valve 146:Valve 147:Measurement Department 150: Treatment liquid supply department 152:Nozzle 154:Piping 156:Valve 160: Diluent supply department 162:Nozzle 164:Piping 166:Valve 170: Drainage part 170a: Drainage piping 170b: valve 180:Gas supply component 180a: 1st end 180b: 2nd end 182:Protrusion 185:Support components 200: 1st temperature adjustment unit 210: 1st storage tank 212: 1st Surveying Department 214:Valve 215: 1st filter 216: 1st heater (1st temperature adjustment part) 218: 1st pump 220: valve 221: Flow adjustment valve 222:Valve 223:Valve 224:Valve 230:Slot body 230a: Bottom 240: cover 250:Gas supply mechanism 251:Valve 253:Filter 257:Flowmeter 259:Adjusting valve 261:Piping 263:Gas supply source 270:Exhaust piping section 271:Connecting components 273:Exhaust piping 275:Flow path 280:Gas supply unit 280A:Gas supply unit 281:Gas supply component 281a: 1st end 281b: 2nd end 283: 1st piping 285: 2nd piping 287: 1st holding member 289: 2nd holding member 291: 1st fixed member 293:Second fixed member 300: 2nd temperature adjustment unit 310: 2nd storage tank 312: 2nd Surveying Department 314: valve 315: 2nd filter 316: 2nd heater (2nd temperature adjustment part) 318: 2nd pump 310: 2nd storage tank 320: valve 350: Cooling tank 391:Flowmeter 392: Flow adjustment valve 400: Chamber 401:Nozzle 402: Rotating chuck 403: Rotary motor 404: Accept the cup FW0: flow path FW1: Flow path FW2: flow path BB:bubble G: Gas supply port GA: gas LQ: treatment liquid p: Processing liquid ejection port P1:Piping P2:Piping P3:Piping P4:Piping P5:Piping P6: 1st cycle piping P7:Piping P8:Piping P9: 2nd cycle piping P10:Piping TKA: treatment fluid supply source TKB: Diluent supply source U1: processing device U1A: Processing device U2: Treatment liquid temperature adjustment device U3: Cooling tank group U4: Control device W: substrate
圖1係表示本發明之實施方式1之基板處理系統之模式圖。 圖2係表示實施方式1之基板處理系統之第1貯存槽之模式性剖視圖。 圖3係表示實施方式1之基板處理系統之氣體供給單元之模式性俯視圖。 圖4係表示實施方式1之基板處理方法之流程圖。 圖5係表示本發明之實施方式2之基板處理系統之模式圖。 圖6係表示實施方式2之基板處理方法之流程圖。 圖7係表示本發明之實施方式3之基板處理系統之模式性剖視圖。 圖8(a)係表示實施方式3之基板浸漬於處理液之前的狀態之圖。(b)係表示實施方式3之基板浸漬於處理液之後的狀態之圖。 圖9係表示實施方式3之基板處理系統之氣體供給單元之模式性俯視圖。 圖10係表示實施方式3之基板處理方法之流程圖。 圖11係表示本發明之實施例1、實施例2及比較例之處理液之比重值之時間變化的曲線圖。FIG. 1 is a schematic diagram showing a substrate processing system according to Embodiment 1 of the present invention. 2 is a schematic cross-sectional view showing the first storage tank of the substrate processing system according to Embodiment 1. 3 is a schematic plan view showing the gas supply unit of the substrate processing system according to Embodiment 1. 4 is a flow chart showing the substrate processing method in Embodiment 1. 5 is a schematic diagram showing a substrate processing system according to Embodiment 2 of the present invention. 6 is a flowchart showing the substrate processing method in Embodiment 2. 7 is a schematic cross-sectional view showing a substrate processing system according to Embodiment 3 of the present invention. 8(a) is a diagram showing the state of the substrate before being immersed in the treatment liquid according to Embodiment 3. (b) is a diagram showing a state after the substrate of Embodiment 3 is immersed in the processing liquid. 9 is a schematic plan view showing the gas supply unit of the substrate processing system according to Embodiment 3. 10 is a flowchart showing the substrate processing method in Embodiment 3. Figure 11 is a graph showing the time change of the specific gravity value of the treatment liquid in Example 1, Example 2 and Comparative Example of the present invention.
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