TWI813877B - 曝光裝置、曝光方法、決定方法、和物品製造方法 - Google Patents

曝光裝置、曝光方法、決定方法、和物品製造方法 Download PDF

Info

Publication number
TWI813877B
TWI813877B TW109114293A TW109114293A TWI813877B TW I813877 B TWI813877 B TW I813877B TW 109114293 A TW109114293 A TW 109114293A TW 109114293 A TW109114293 A TW 109114293A TW I813877 B TWI813877 B TW I813877B
Authority
TW
Taiwan
Prior art keywords
light
area
image
optical system
wavelength range
Prior art date
Application number
TW109114293A
Other languages
English (en)
Chinese (zh)
Other versions
TW202044340A (zh
Inventor
八講学
Original Assignee
日商佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商佳能股份有限公司 filed Critical 日商佳能股份有限公司
Publication of TW202044340A publication Critical patent/TW202044340A/zh
Application granted granted Critical
Publication of TWI813877B publication Critical patent/TWI813877B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Control For Cameras (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
TW109114293A 2019-05-17 2020-04-29 曝光裝置、曝光方法、決定方法、和物品製造方法 TWI813877B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-093918 2019-05-17
JP2019093918A JP7390804B2 (ja) 2019-05-17 2019-05-17 露光装置、露光方法、決定方法および物品製造方法

Publications (2)

Publication Number Publication Date
TW202044340A TW202044340A (zh) 2020-12-01
TWI813877B true TWI813877B (zh) 2023-09-01

Family

ID=73222771

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109114293A TWI813877B (zh) 2019-05-17 2020-04-29 曝光裝置、曝光方法、決定方法、和物品製造方法

Country Status (5)

Country Link
US (1) US11592750B2 (https=)
JP (1) JP7390804B2 (https=)
KR (1) KR102710253B1 (https=)
CN (1) CN111948910B (https=)
TW (1) TWI813877B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7751484B2 (ja) * 2021-12-27 2025-10-08 キヤノン株式会社 露光装置及び物品の製造方法
CN114839843A (zh) * 2022-07-04 2022-08-02 上海传芯半导体有限公司 一种投影式光刻机的光源结构、投影式光刻机及光刻工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040172610A1 (en) * 2003-02-28 2004-09-02 International Business Machines Corporation Pitch-based subresolution assist feature design
TW200844676A (en) * 2007-01-23 2008-11-16 Canon Kk Methods for adjusting and evaluating light intensity distribution of illumination apparatus, illumination apparatus, exposure apparatus, and device manufacturing method
TW200942975A (en) * 2007-12-18 2009-10-16 Canon Kk Exposure apparatus, exposure method, and semiconductor device fabrication method
US20120052448A1 (en) * 2010-09-01 2012-03-01 Canon Kabushiki Kaisha Determination method, exposure method and storage medium
JP2018054992A (ja) * 2016-09-30 2018-04-05 キヤノン株式会社 照明光学系、露光装置、及び物品の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2884950B2 (ja) * 1992-10-09 1999-04-19 株式会社ニコン 投影露光装置、露光方法および半導体集積回路の製造方法
JPH1012524A (ja) 1996-06-24 1998-01-16 Mitsubishi Electric Corp 露光装置および露光方法
JP3646757B2 (ja) * 1996-08-22 2005-05-11 株式会社ニコン 投影露光方法及び装置
US7030966B2 (en) 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
JP6674250B2 (ja) 2015-12-16 2020-04-01 キヤノン株式会社 露光装置、露光方法、および物品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040172610A1 (en) * 2003-02-28 2004-09-02 International Business Machines Corporation Pitch-based subresolution assist feature design
TW200844676A (en) * 2007-01-23 2008-11-16 Canon Kk Methods for adjusting and evaluating light intensity distribution of illumination apparatus, illumination apparatus, exposure apparatus, and device manufacturing method
TW200942975A (en) * 2007-12-18 2009-10-16 Canon Kk Exposure apparatus, exposure method, and semiconductor device fabrication method
US20120052448A1 (en) * 2010-09-01 2012-03-01 Canon Kabushiki Kaisha Determination method, exposure method and storage medium
JP2018054992A (ja) * 2016-09-30 2018-04-05 キヤノン株式会社 照明光学系、露光装置、及び物品の製造方法

Also Published As

Publication number Publication date
CN111948910A (zh) 2020-11-17
US11592750B2 (en) 2023-02-28
KR102710253B1 (ko) 2024-09-26
JP7390804B2 (ja) 2023-12-04
TW202044340A (zh) 2020-12-01
JP2020187333A (ja) 2020-11-19
US20200363726A1 (en) 2020-11-19
KR20200132712A (ko) 2020-11-25
CN111948910B (zh) 2024-08-13

Similar Documents

Publication Publication Date Title
KR20040050884A (ko) 노광장치와 노광방법
TWI813877B (zh) 曝光裝置、曝光方法、決定方法、和物品製造方法
US20060286460A1 (en) Photomask, method of making a photomask and photolithography method and system using the same
JP2004251969A (ja) 位相シフトマスク、位相シフトマスクを用いたパターンの形成方法および電子デバイスの製造方法
TWI656410B (zh) 曝光裝置、曝光方法、及物品的製造方法
JP2023096984A (ja) 露光装置及び物品の製造方法
JP7570826B2 (ja) 露光装置、露光方法、及び物品の製造方法
US7426711B2 (en) Mask pattern data forming method, photomask and method of manufacturing semiconductor device
KR102696639B1 (ko) 노광장치, 노광방법 및 물품의 제조방법
KR20210103948A (ko) 결정방법, 노광장치, 노광방법, 물품의 제조방법 및 기억매체
JP6370755B2 (ja) マスク及びパターン形成方法
JP2021018358A (ja) 生成方法、情報処理装置、露光方法、露光装置、物品の製造方法及びプログラム
JP2008198918A (ja) 露光装置の調整方法および半導体装置の製造方法
JPH0878311A (ja) 露光方法及び露光装置