TWI810465B - Plasma processing apparatus and method thereof - Google Patents
Plasma processing apparatus and method thereof Download PDFInfo
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- TWI810465B TWI810465B TW109119231A TW109119231A TWI810465B TW I810465 B TWI810465 B TW I810465B TW 109119231 A TW109119231 A TW 109119231A TW 109119231 A TW109119231 A TW 109119231A TW I810465 B TWI810465 B TW I810465B
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- 238000012545 processing Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 87
- 238000009434 installation Methods 0.000 claims abstract description 20
- 238000006073 displacement reaction Methods 0.000 claims abstract description 10
- 239000006227 byproduct Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 12
- 230000001052 transient effect Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 10
- 238000013461 design Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32889—Connection or combination with other apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
本發明公開了一種等離子處理裝置及其方法，所述等離子處理裝置包含:一真空反應腔，所述真空反應腔的下方還設置一真空泵，用於將反應副產物排出所述真空反應腔，所述等離子處理裝置包含:複數個安裝緊固件，其用於將所述真空泵固定在所述真空反應腔腔體上；至少一個緩衝裝置，藉由所述安裝緊固件固定在所述真空泵和所述真空反應腔的腔體之間，所述緩衝裝置設有形變空間，所述緩衝裝置藉由所述形變空間產生位移變形以吸收所述真空泵的部分動能。其優點是:在等離子處理裝置突然發生故障時，緩衝裝置可吸收較多的真空泵動能，使真空反應腔腔體接收的真空泵殘餘動能大大減小，有效地保護了真空反應腔腔體，減小了安全事故發生的可能性。 The invention discloses a plasma processing device and a method thereof. The plasma processing device comprises: a vacuum reaction chamber, and a vacuum pump is arranged below the vacuum reaction chamber to discharge reaction by-products from the vacuum reaction chamber. The plasma processing device includes: a plurality of installation fasteners, which are used to fix the vacuum pump on the vacuum reaction chamber cavity; at least one buffer device, fixed on the vacuum pump and the vacuum reaction chamber by the installation fasteners Between the cavities of the vacuum reaction chamber, the buffer device is provided with a deformation space, and the buffer device generates displacement deformation through the deformation space to absorb part of the kinetic energy of the vacuum pump. Its advantages are: when the plasma processing device breaks down suddenly, the buffer device can absorb more kinetic energy of the vacuum pump, so that the residual kinetic energy of the vacuum pump received by the vacuum reaction chamber cavity is greatly reduced, effectively protecting the vacuum reaction chamber cavity and reducing the possibility of safety accidents.
Description
本發明涉及半導體製造技術領域，具體涉及一種等離子處理裝置及其方法。 The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma processing device and a method thereof.
等離子處理裝置利用真空反應室的工作原理進行半導體基片和等離子平板的基片的加工。真空反應室的工作原理是在真空反應室中通入含有適當刻蝕劑或澱積源氣體的反應氣體，然後再對該真空反應室進行射頻能量輸入，以啟動反應氣體，來點燃和維持等離子，以便分別刻蝕基片表面上的材料層或在基片表面上澱積材料層，進而對半導體基片和等離子平板進行加工。舉例來說，電容性等離子反應器已經被廣泛地用來加工半導體基片和顯示器平板，在電容性等離子反應器中，當射頻功率被施加到二個電極之一或二者時，就在一對平行電極之間形成電容性放電。 The plasma processing device uses the working principle of the vacuum reaction chamber to process the semiconductor substrate and the substrate of the plasma flat panel. The working principle of the vacuum reaction chamber is to pass a reaction gas containing an appropriate etchant or deposition source gas into the vacuum reaction chamber, and then input radio frequency energy to the vacuum reaction chamber to start the reaction gas to ignite and maintain the plasma , so as to respectively etch the material layer on the substrate surface or deposit the material layer on the substrate surface, and then process the semiconductor substrate and the plasma plate. For example, capacitive plasma reactors have been widely used to process semiconductor substrates and display panels. In capacitive plasma reactors, when RF power is applied to one or both of the two electrodes, a A capacitive discharge is formed between the parallel electrodes.
在半導體基片處理過程中，基片處理產生的反應副產物也可能會隨之停留在真空反應腔內。舉例來說，反應副產物可能充滿真空反應腔下方的處理區域內部或外面的區域。若反應副產物到達這些區域，則這些區域可能隨之發生腐蝕、澱積或者侵蝕，這會造成反應腔內部的顆粒玷污，進而降低等離子處理裝置的重複使用性能，並可能會縮短反應腔或反應室零部件的工作壽命。反應副產物過多會影響等離子處理裝置對半導體基片的進一步處理，容易 摻有雜質。通常來說，業內人士普遍採用在真空反應腔外接一個真空泵，用於將反應副產物及時排出真空反應腔。 During the processing of semiconductor substrates, the reaction by-products generated by substrate processing may also stay in the vacuum reaction chamber. For example, reaction by-products may fill the area inside or outside the processing region below the vacuum reaction chamber. If reaction by-products reach these areas, corrosion, deposition or erosion may ensue in these areas, which can cause particle contamination inside the reaction chamber, thereby reducing the reusability of the plasma processing device and possibly shortening the reaction chamber or reaction chamber Working life of parts. Excessive reaction by-products will affect the further processing of the semiconductor substrate by the plasma processing device, which is easy to Contaminated with impurities. Generally speaking, people in the industry generally use a vacuum pump connected outside the vacuum reaction chamber to discharge the reaction by-products out of the vacuum reaction chamber in time.
習知的等離子處理裝置一般是直接藉由複數個安裝緊固件將真空泵固定在真空反應腔腔體上，或者藉由轉接板(板狀或環狀)固定在真空反應腔腔體上。但是，在等離子處理裝置刻蝕半導體基片或等離子平板加工過程中，真空泵的轉子一般保持高轉速轉動，在真空泵轉子高速運轉的情況下，如果突然發生故障，真空泵巨大的動能會藉由安裝緊固件或轉接板直接傳遞到真空反應腔腔體上。如果突然發生故障，真空泵泵轉子巨大的動能會藉由安裝緊固件直接傳遞到真空反應腔腔體上。真空泵驟停，泵轉子巨大的動能容易使真空反應腔腔體受到衝擊而破壞，或者由於真空泵產生的動能過大，使安裝緊固件或轉接板斷裂，導致真空泵泵體攜帶較大的動能飛出，容易造成生產事故，且容易造成人身安全問題。 In conventional plasma processing devices, the vacuum pump is generally fixed directly on the vacuum reaction chamber body by a plurality of mounting fasteners, or fixed on the vacuum reaction chamber body by an adapter plate (plate-shaped or ring-shaped). However, during the process of etching semiconductor substrates or plasma flat panels in plasma processing equipment, the rotor of the vacuum pump generally keeps rotating at a high speed. Firmware or adapter plates are transferred directly onto the vacuum chamber chamber. If a sudden failure occurs, the huge kinetic energy of the vacuum pump rotor will be directly transmitted to the vacuum reaction chamber through the installation fasteners. Sudden stop of the vacuum pump, the huge kinetic energy of the pump rotor is easy to damage the vacuum reaction chamber due to impact, or the installation fastener or adapter plate is broken due to the excessive kinetic energy generated by the vacuum pump, causing the vacuum pump body to fly out with a large kinetic energy. , It is easy to cause production accidents, and it is easy to cause personal safety problems.
本發明的目的在於提供一種等離子處理裝置及其方法，將真空反應腔、射頻電源、真空泵、安裝緊固件及緩衝裝置等相結合，利用緩衝裝置及安裝緊固件將真空泵固定在真空反應腔腔體上，使得等離子處理裝置突然發生故障時，真空泵的動能可以藉由緩衝裝置向安裝緊固件與真空反應腔腔體傳遞。藉由緩衝裝置的設計，可吸收較多的真空泵動能，使真空反應腔腔體接收的真空泵殘餘動能大大減小，有效地保護了真空反應腔腔體，減小了安全事故發生的可能性。 The purpose of the present invention is to provide a plasma processing device and method thereof, which combines a vacuum reaction chamber, a radio frequency power supply, a vacuum pump, mounting fasteners and a buffer device, and uses the buffer device and mounting fasteners to fix the vacuum pump in the vacuum reaction chamber cavity On the other hand, when the plasma processing device fails suddenly, the kinetic energy of the vacuum pump can be transmitted to the installation fastener and the vacuum reaction chamber through the buffer device. With the design of the buffer device, more kinetic energy of the vacuum pump can be absorbed, and the residual kinetic energy of the vacuum pump received by the vacuum reaction chamber is greatly reduced, which effectively protects the vacuum reaction chamber and reduces the possibility of safety accidents.
為了達到上述目的，本發明藉由以下技術方案實現： 一種等離子處理裝置，包含一真空反應腔，所述真空反應腔內包含一個用於支撐基片的基座，所述真空反應腔的下方還設置一真空泵，用於將反應副產物排出所述真空反應腔，所述等離子處理裝置包含：複數個安裝緊固件，用於將所述真空泵固定在所述真空反應腔的腔體上；至少一個緩衝裝置，藉由所述安裝緊固件固定在所述真空泵和所述真空反應腔的腔體之間，所述緩衝裝置設有形變空間，所述緩衝裝置藉由所述形變空間產生位移變形以吸收所述真空泵的部分動能。 In order to achieve the above object, the present invention is achieved by the following technical solutions: A plasma processing device, comprising a vacuum reaction chamber, the vacuum reaction chamber contains a base for supporting the substrate, and a vacuum pump is arranged below the vacuum reaction chamber to discharge the reaction by-products from the vacuum The reaction chamber, the plasma processing device includes: a plurality of installation fasteners, used to fix the vacuum pump on the cavity of the vacuum reaction chamber; at least one buffer device, fixed on the said installation fasteners Between the vacuum pump and the cavity of the vacuum reaction chamber, the buffer device is provided with a deformation space, and the buffer device generates displacement deformation through the deformation space to absorb part of the kinetic energy of the vacuum pump.
較佳地，所述緩衝裝置由塑性材料或鋼或鋁或銅製成。 Preferably, the buffer device is made of plastic material or steel or aluminum or copper.
較佳地，所述緩衝裝置為墊片。 Preferably, the buffer device is a gasket.
較佳地，所述墊片設置有至少一個第一開孔，供所述安裝緊固件插入以固定所述真空泵。 Preferably, the gasket is provided with at least one first opening for the installation fastener to be inserted to fix the vacuum pump.
較佳地，所述墊片還包括一第二開孔，所述第二開孔容納墊圈鎖緊銷或螺釘以將所述墊片固定在所述真空泵上。 Preferably, the spacer also includes a second opening for receiving a washer locking pin or screw for fixing the spacer to the vacuum pump.
較佳地，所述墊片還包括一第三開孔，所述第三開孔容納墊圈鎖緊銷或螺釘以將所述墊片固定在所述真空泵上，所述第二開孔和第三開孔位於所述第一開孔的兩側。 Preferably, the gasket further includes a third opening, the third opening accommodates washer locking pins or screws to fix the gasket on the vacuum pump, the second opening and the first The three openings are located on both sides of the first opening.
較佳地，所述墊片的所述第一開孔與所述第二開孔之間至少設置一個形變空間，所述形變空間用於在所述真空泵突然變速時藉由擠壓或拉伸，吸收所述真空泵的部分動能。 Preferably, at least one deformation space is provided between the first opening and the second opening of the gasket, and the deformation space is used for squeezing or stretching when the vacuum pump suddenly changes speed. , to absorb part of the kinetic energy of the vacuum pump.
較佳地，所述形變空間為設置在所述第一開孔和第二開孔之間的孔或豁口。 Preferably, the deformation space is a hole or a gap provided between the first opening and the second opening.
一種等離子處理裝置的處理方法，該方法包含以下過程： 在複數個安裝緊固件上各自設置有一緩衝裝置；藉由所述安裝緊固件將所述真空泵固定在所述真空反應腔的腔體上；所述等離子處理裝置刻蝕基片過程中，所述真空泵的轉子轉動；當所述真空泵驟停時，所述緩衝裝置自身藉由產生位移變形，用以吸收所述真空泵的部分動能。 A processing method for a plasma processing device, the method comprising the following processes: A buffer device is respectively arranged on a plurality of installation fasteners; the vacuum pump is fixed on the cavity of the vacuum reaction chamber by the installation fasteners; during the process of etching the substrate of the plasma processing device, the The rotor of the vacuum pump rotates; when the vacuum pump suddenly stops, the buffer device itself deforms through displacement to absorb part of the kinetic energy of the vacuum pump.
較佳地，所述緩衝裝置為墊片。 Preferably, the buffer device is a gasket.
較佳地，一種等離子處理裝置的處理方法，所述緩衝裝置由於變形導致吸收的能量大小E a 為：
本發明與習知技術相比具有以下優點：(1)藉由緩衝裝置及安裝緊固件將真空泵固定在真空反應腔腔體上，使得等離子處理裝置突然發生故障時，真空泵的動能可以藉由緩衝裝置向安裝緊固件與真空反應腔腔體傳遞； (2)藉由對緩衝裝置的設計，使緩衝裝置可吸收較多的真空泵動能，使真空反應腔腔體接收的真空泵殘餘動能大大減小，有效地保護了真空反應腔腔體，減小了安全事故發生的可能性；(3)真空泵在緊急停轉的情況下，緩衝裝置以合適的力承受一定程度的變形破壞，從而保護真空反應腔腔體以及真空泵，也大大降低了等離子處理裝置對周圍設備及工作人員的影響；(4)本發明的緩衝裝置結構簡單，小部件可以在滿足功能的基礎上，還能減輕了設計上對空間的需求。 Compared with the prior art, the present invention has the following advantages: (1) the vacuum pump is fixed on the vacuum reaction chamber body by the buffer device and the installation fastener, so that when the plasma processing device fails suddenly, the kinetic energy of the vacuum pump can be buffered The device is transferred to the installation fastener and the vacuum reaction chamber cavity; (2) With the design of the buffer device, the buffer device can absorb more kinetic energy of the vacuum pump, greatly reducing the residual kinetic energy of the vacuum pump received by the vacuum reaction chamber, effectively protecting the vacuum reaction chamber and reducing the Possibility of safety accidents; (3) In the case of emergency shutdown of the vacuum pump, the buffer device withstands a certain degree of deformation and damage with an appropriate force, thereby protecting the vacuum reaction chamber and the vacuum pump, and greatly reducing the impact on the plasma processing device. The impact of surrounding equipment and staff; (4) the buffer device of the present invention is simple in structure, and small parts can also alleviate the demand for space in design on the basis of satisfying functions.
1:真空反應腔 1: Vacuum reaction chamber
2:基座 2: base
3:靜電夾盤 3: Electrostatic chuck
4:氣體噴淋裝置 4: Gas spray device
5:氣體供應裝置 5: Gas supply device
6:傳片門 6: film transfer door
7:射頻功率源 7: RF power source
8:真空泵 8: Vacuum pump
9:螺釘 9: screw
10:墊片 10: Gasket
101:墊圈鎖緊銷 101: Washer locking pin
102:第一通孔 102: The first through hole
103:第二通孔 103: Second through hole
104:第三通孔 104: The third through hole
105:第一中部位置 105: First central position
106:第二中部位置 106: Second middle position
107:第四通孔 107: The fourth through hole
108:第五通孔 108: Fifth through hole
圖1為本發明的等離子處理裝置；圖2為本發明等離子處理裝置中真空反應腔與真空泵連接圖；圖3為本發明真空泵與真空反應腔腔體連接俯視圖；圖4為本發明中緩衝裝置與安裝緊固件連接俯視圖；圖5為本發明中緩衝裝置與安裝緊固件連接截面圖；圖6為本發明實施例一中的吸收衝擊能量前與吸收能量後的緩衝裝置；圖7為本發明實施例二中的緩衝裝置；圖8為本發明實施例三中的緩衝裝置。 Fig. 1 is a plasma processing device of the present invention; Fig. 2 is a connection diagram of a vacuum reaction chamber and a vacuum pump in a plasma processing device of the present invention; Fig. 3 is a top view of the connection between a vacuum pump and a vacuum reaction chamber cavity of the present invention; Fig. 4 is a buffer device of the present invention A top view of the connection with the installation fastener; Figure 5 is a cross-sectional view of the connection between the buffer device and the installation fastener in the present invention; Figure 6 is the buffer device before absorbing impact energy and after absorbing energy in Embodiment 1 of the present invention; Figure 7 is the buffer device of the present invention The buffer device in the second embodiment; FIG. 8 is the buffer device in the third embodiment of the present invention.
為使本發明實施例的目的、技術方案和優點更加清楚，下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述，顯然，所描述的實施例是本發明一部分實施例，而不是全部的實施例。基 於本發明中的實施例，所屬技術領域中具有通常知識者在沒有做出進步性勞動前提下所獲得的所有其他實施例，都屬於本發明保護的範圍。 In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. base For the embodiments of the present invention, all other embodiments obtained by persons with ordinary knowledge in the technical field without making progressive efforts all belong to the scope of protection of the present invention.
需要說明的是，在本文中，術語“包括”、“包含”、“具有”或者其任何其他變體意在涵蓋非排他性的包含，從而使得包括一系列要素的過程、方法、物品或者終端設備不僅包括那些要素，而且還包括沒有明確列出的其他要素，或者是還包括為這種過程、方法、物品或者終端設備所固有的要素。在沒有更多限制的情況下，由語句“包括……”或“包含……”限定的要素，並不排除在包括所述要素的過程、方法、物品或者終端設備中還存在另外的要素。 It should be noted that, in this document, the terms "comprising", "comprising", "having" or any other variation thereof are intended to cover a non-exclusive inclusion such that a process, method, article or terminal device comprising a series of elements Not only those elements are included, but also other elements not expressly listed or inherent in such process, method, article or terminal equipment. Without further limitations, an element defined by the words "comprising..." or "comprising..." does not exclude the presence of additional elements in the process, method, article or terminal device comprising said element.
需說明的是，附圖均採用非常簡化的形式且均使用非精準的比率，僅用以方便、明晰地輔助說明本發明一實施例的目的。 It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used to facilitate and clearly illustrate an embodiment of the present invention.
實施例一 Embodiment one
如圖1所示，為本發明的一種等離子處理裝置的結構示意圖，等離子處理裝置包含一真空反應腔1，所述真空反應腔1內包含一個用於支撐基片的基座2，一個射頻功率源7連接並供應射頻功率到所述基座2，所述基座2上包含一放置待處理基片的靜電夾盤3。真空反應腔1的側壁上設有傳片門6，即該傳片門6為反應腔一側側壁上的開口，用於將晶圓在反應腔內外之間傳輸。真空反應腔1包括由金屬材料製成的大致為圓柱形的反應腔側壁，反應腔側壁上方設置一氣體噴淋裝置4，氣體噴淋裝置4與氣體供應裝置5相連。氣體供應裝置5中的反應氣體經過氣體噴淋裝置4進入真空反應腔1。 As shown in Figure 1, it is a schematic structural view of a plasma processing device of the present invention, the plasma processing device includes a vacuum reaction chamber 1, and the vacuum reaction chamber 1 includes a base 2 for supporting a substrate, a radio frequency power A source 7 is connected and supplies RF power to the base 2, which includes an electrostatic chuck 3 on which the substrate to be processed is placed. The side wall of the vacuum reaction chamber 1 is provided with a film transfer door 6 , that is, the film transfer door 6 is an opening on one side wall of the reaction chamber, and is used for transferring the wafer between the inside and outside of the reaction chamber. The vacuum reaction chamber 1 includes a substantially cylindrical reaction chamber side wall made of metal material, a gas shower device 4 is arranged above the reaction chamber side wall, and the gas shower device 4 is connected with a gas supply device 5 . The reaction gas in the gas supply device 5 enters the vacuum reaction chamber 1 through the gas shower device 4 .
射頻功率源7的射頻功率施加到基座2，在真空反應腔1內產生將反應氣體解離為等離子的電場，等離子中含有大量的電子、離子、激發態的原 子、分子和自由基等活性粒子，上述活性粒子可以和待處理基片的表面發生多種物理和化學反應，使得基片表面的形貌發生改變，即完成刻蝕過程。真空反應腔1的下方還設置一真空泵8，所述真空泵8用於將反應副產物排出所述真空反應腔1。 The radio frequency power of the radio frequency power source 7 is applied to the base 2, and an electric field that dissociates the reaction gas into plasma is generated in the vacuum reaction chamber 1, and the plasma contains a large amount of electrons, ions, and excited state atoms. Active particles such as molecules, molecules and free radicals can have various physical and chemical reactions with the surface of the substrate to be treated, so that the morphology of the substrate surface changes, that is, the etching process is completed. A vacuum pump 8 is also arranged below the vacuum reaction chamber 1 , and the vacuum pump 8 is used to discharge the reaction by-products out of the vacuum reaction chamber 1 .
如圖1、圖3和圖4結合所示，本發明中的所述真空泵8藉由複數個安裝緊固件固定在所述真空反應腔1腔體上，所述安裝緊固件穿過一緩衝裝置與所述真空反應腔1腔體連接，所述緩衝裝置藉由所述安裝緊固件固定在所述真空泵和所述真空反應腔的腔體之間，所述緩衝裝置設有形變空間，所述緩衝裝置藉由所述形變空間產生位移變形以吸收所述真空泵的部分動能。 As shown in Figure 1, Figure 3 and Figure 4 in combination, the vacuum pump 8 in the present invention is fixed on the cavity of the vacuum reaction chamber 1 by a plurality of installation fasteners, and the installation fasteners pass through a buffer device Connected with the cavity of the vacuum reaction chamber 1, the buffer device is fixed between the vacuum pump and the cavity of the vacuum reaction chamber by the installation fastener, the buffer device is provided with a deformation space, the The buffer device produces displacement deformation through the deformation space to absorb part of the kinetic energy of the vacuum pump.
本實施例中，所述安裝緊固件為螺釘9，所述緩衝裝置為一墊片10。所述墊片10藉由一對墊圈鎖緊銷101使所述墊片10固定在所述真空反應腔1腔體上而不會邊緣翹起。如圖3所示，在所述真空泵8整圈使用螺釘9固定時，所有的墊片10也整圈使用。 In this embodiment, the mounting fastener is a screw 9 , and the buffer device is a washer 10 . The gasket 10 is fixed on the cavity of the vacuum reaction chamber 1 by a pair of washer locking pins 101 so that the edge will not be lifted. As shown in FIG. 3 , when the vacuum pump 8 is fixed with screws 9 for a full circle, all gaskets 10 are also used for a full circle.
通常的墊片10一般採用金屬、橡膠材料、複合材料或彈性材料，如鋼、鋁或銅等。本實施例中，所述墊片10由塑性材料製成，該塑性材料承受真空泵8動能衝擊的時間較長，吸收的動能也較多。 The usual gasket 10 is generally made of metal, rubber material, composite material or elastic material, such as steel, aluminum or copper. In this embodiment, the gasket 10 is made of plastic material, and the plastic material withstands the impact of the kinetic energy of the vacuum pump 8 for a longer time and absorbs more kinetic energy.
所述墊片10的長度和厚度限制於安裝位置的物理空間，其長度和厚度範圍取決於每個墊片10平均需要吸收的動能。墊片10過大或過厚會使墊片10本身的衝擊力過大，不僅不能起到吸收真空泵8泵轉子動能的效果，墊片10自身的動能也會增加真空反應腔1與真空泵8的動能壓力。墊片10過小或過薄，容易產生無法吸收足夠的真空泵8動能的問題，在真空泵8驟停時，容易產生墊片10已被破壞而真空泵8的衝擊還未結束的情況。 The length and thickness of the gasket 10 are limited to the physical space of the installation location, and the range of the length and thickness depends on the average kinetic energy that each gasket 10 needs to absorb. If the gasket 10 is too large or too thick, the impact force of the gasket 10 itself will be too large, not only cannot absorb the kinetic energy of the rotor of the vacuum pump 8, but the kinetic energy of the gasket 10 itself will also increase the kinetic energy pressure of the vacuum reaction chamber 1 and the vacuum pump 8 . If the gasket 10 is too small or too thin, it is easy to cause the problem of not being able to absorb enough kinetic energy of the vacuum pump 8 . When the vacuum pump 8 suddenly stops, the gasket 10 is likely to be damaged and the impact of the vacuum pump 8 has not yet ended.
如圖4及圖5結合所示，為本實施例中單個墊片10與螺釘9連接的截面圖與俯視圖，所述墊片10上有一第一通孔102，位於所述墊片10的中間位置，所述螺釘9穿過所述第一通孔102將所述真空泵8固定在所述真空反應腔1的腔體上。 As shown in Figure 4 and Figure 5, it is a cross-sectional view and a top view of the connection between a single gasket 10 and the screw 9 in this embodiment. There is a first through hole 102 on the gasket 10, which is located in the middle of the gasket 10. Position, the screw 9 passes through the first through hole 102 to fix the vacuum pump 8 on the cavity of the vacuum reaction chamber 1 .
所述墊片10還包含一第二通孔103與一第三通孔104，位於所述第一通孔102兩側，所述第二通孔103與所述第三通孔104供兩個所述墊圈鎖緊銷101插入，將所述墊片10固定在所述真空泵8上。 The pad 10 also includes a second through hole 103 and a third through hole 104, located on both sides of the first through hole 102, the second through hole 103 and the third through hole 104 provide two The gasket locking pin 101 is inserted to fix the gasket 10 on the vacuum pump 8 .
本實施例中的所述墊片10設有形變空間，其中，所述第一通孔102與所述第二通孔103之間為第一中部位置105，所述第一通孔102與所述第三通孔104之間為第二中部位置106，所述第一中部位置105與所述第二中部位置106為本實施例中所述墊片10的形變空間。所述第一中部位置105與所述第二中部位置106中分別設置了橢圓形的第四通孔107與第五通孔108，此兩處中部位置的設計是為了調節墊片10形變空間吸收動能的強度，使得所述墊片10在受到所述真空泵8衝擊的過程中，以所述真空反應腔1腔體和所述真空泵8能夠承受的力，承受一定的距離位移變形，從而達到吸收所述真空泵8動能的目的。需要注意的是，所述第一中部位置105與所述第二中部位置106的設計不僅限於此，也可以不設有通孔或者為其他設計，只要可改變所述墊片10與所述真空泵8的接觸面積，即改變所述墊片10的暫態接觸應力即可，總而言之，只要可調節所述墊片10的吸收動能大小的設計都屬於本發明的保護範圍。 The gasket 10 in this embodiment is provided with a deformation space, wherein the first middle position 105 is between the first through hole 102 and the second through hole 103, and the first middle position 105 is located between the first through hole 102 and the second through hole 103. Between the third through holes 104 is a second middle position 106 , and the first middle position 105 and the second middle position 106 are deformation spaces of the gasket 10 in this embodiment. The first middle position 105 and the second middle position 106 are provided with elliptical fourth through hole 107 and fifth through hole 108 respectively, and the design of these two middle positions is to adjust the deformation space absorption of gasket 10 The strength of the kinetic energy makes the gasket 10 withstand a certain distance displacement deformation with the force that the vacuum reaction chamber 1 cavity and the vacuum pump 8 can bear during the process of being impacted by the vacuum pump 8, so as to achieve absorption The purpose of the vacuum pump 8 kinetic energy. It should be noted that the design of the first middle position 105 and the second middle position 106 is not limited thereto, and there may be no through hole or other designs as long as the gasket 10 and the vacuum pump can be changed. 8, that is, to change the transient contact stress of the gasket 10, in a word, as long as the design of the absorbed kinetic energy of the gasket 10 can be adjusted, it all falls within the protection scope of the present invention.
如圖6所示，為所述墊片10在受到所述真空泵8動能衝擊前後的變化示意圖，等離子處理裝置的所述真空泵8泵轉子在高速運轉條件下，所述墊片10的墊圈鎖緊銷101重心跟隨所述真空泵8的泵體，所述第一通孔102與所述第二 通孔103之間的第一中部位置105和所述第一通孔102與第三通孔104之間的第二中部位置106的重心跟隨所述真空反應腔1的腔體。當所述真空泵8發生故障急停時，所述墊片10在所述真空泵8旋轉方向的部分會被壓縮變形，即所述第一中部位置105的所述第四通孔107的邊緣被壓縮產生變形，而不在旋轉方向的另一部分會被拉伸導致變形，即所述第二中部位置106的第五通孔108的邊緣向被壓縮變形的一側發生偏移而被拉伸導致變形。 As shown in Figure 6, it is a schematic diagram of the change of the gasket 10 before and after being impacted by the kinetic energy of the vacuum pump 8. The washer of the gasket 10 is locked when the rotor of the vacuum pump 8 of the plasma processing device operates at a high speed. The center of gravity of the pin 101 follows the pump body of the vacuum pump 8, and the first through hole 102 and the second The center of gravity of the first middle position 105 between the through holes 103 and the second middle position 106 between the first through holes 102 and the third through holes 104 follows the cavity of the vacuum reaction chamber 1 . When the vacuum pump 8 fails and stops suddenly, the part of the gasket 10 in the rotation direction of the vacuum pump 8 will be compressed and deformed, that is, the edge of the fourth through hole 107 at the first middle position 105 will be compressed Deformation occurs, and the other part that is not in the rotation direction will be stretched to cause deformation, that is, the edge of the fifth through hole 108 at the second middle position 106 is offset to the side that is compressed and deformed, and is stretched to cause deformation.
根據衝擊理論，所述墊片10由於變形導致變形吸收的能量大小E a 為：
而所述真空泵8本身的動能E p 大小為：
因此，所述真空泵8泵轉子殘餘動能E l 大小為：E l =E p -E a 。 Therefore, the magnitude of the residual kinetic energy E l of the pump rotor of the vacuum pump 8 is: E l = E p - E a .
所述墊片10吸收的所述真空泵8泵轉子動能能量E a 越多，殘餘動能E l 就越小，所述真空反應腔1腔體受到的保護越強。 The more kinetic energy E a of the pump rotor of the vacuum pump 8 absorbed by the gasket 10 , the smaller the residual kinetic energy E l , and the stronger the protection for the vacuum reaction chamber 1 is.
如圖6所示，圖中df為所述墊片10的暫態接觸應力，△L是所述墊片10的暫態位移dl的積分累加的最終值，也就是墊片10變形使得中心線偏移的最終值，即所述墊片10的中心線位置向真空泵8泵轉子運轉的方向發生△L的偏移。 As shown in Figure 6, df in the figure is the transient contact stress of the gasket 10, and ΔL is the final value of the integral accumulation of the transient displacement dl of the gasket 10, that is, the deformation of the gasket 10 makes the center line The final value of the offset, that is, the centerline position of the gasket 10 is offset by ΔL in the direction in which the rotor of the vacuum pump 8 is running.
高速運轉的真空泵8泵轉子驟停，與生活中的急刹車原理類似。車輛高速運行過程中，大力刹車，車輛會很快停下，但車裡的人可能會因為極大地慣性衝擊力或動能而造成受傷。慢慢刹車，車子滑行距離較長，但車子和乘客受衝擊較小。 The 8 pump rotors of the vacuum pump running at high speed stop suddenly, which is similar to the principle of sudden braking in life. When the vehicle is running at high speed, if you brake vigorously, the vehicle will stop quickly, but the people in the vehicle may be injured due to the huge inertial impact force or kinetic energy. Brake slowly, the car will slide for a longer distance, but the car and passengers will be less impacted.
在真空泵8與真空反應腔1連接處加上緩衝裝置，如墊片10，可以在真空泵8泵轉子急停的情況下，墊片10以合適的力承受一定程度的變形破壞而達到同時保護真空反應腔1腔體和真空泵8的目的，藉由墊片10的形變空間產生變形從而吸收真空泵8泵轉子殘餘動能，減小對真空反應腔1腔體和真空泵8的損傷，也大大降低對周圍設備和工作人員的影響。 A buffer device, such as a gasket 10, is added to the connection between the vacuum pump 8 and the vacuum reaction chamber 1. When the rotor of the vacuum pump 8 stops suddenly, the gasket 10 can withstand a certain degree of deformation and damage with a suitable force to protect the vacuum at the same time. The purpose of the cavity of the reaction chamber 1 and the vacuum pump 8 is to absorb the residual kinetic energy of the rotor of the vacuum pump 8 by deforming the deformation space of the gasket 10, reduce the damage to the cavity of the vacuum reaction chamber 1 and the vacuum pump 8, and greatly reduce the damage to the surrounding area. Effects on equipment and staff.
實施例二 Embodiment two
基於實施例一中的等離子處理裝置的結構特性，本實施例對所述墊片10的結構做出了一些改變，主要針對所述墊片10的形變空間部分作出改變。如圖7所示，所述墊片10開設有第一通孔102供安裝緊固件穿過，在所述墊片10的兩端設置有第二通孔103與第三通孔104供墊圈鎖緊銷101穿過固定所述墊片10。在所述第一通孔102與所述第二通孔103之間的第一中部位置105設置有三個孔開口，在所述第一通孔102與所述第三通孔104之間的第二中部位置106設置有三個孔開口，藉由改變所述墊片10中部位置與所述真空泵8的接觸面積來調節所述第一中部位置105和所述第二中部位置106與所述真空泵8的暫態接觸應力，從而改變所述墊片10中部位置的吸收動能E a 。在所述真空泵8泵轉子驟停時，所述第一中部位置105與所述第二中部位置106發生壓縮或拉伸的形變。根據衝擊理論，所述第一中部位置105與所述第二中部位置106吸收所述真空泵8泵轉子的動能能量E a 越多，即所述墊片10吸收的所述真空泵8泵轉子的動能能量E a 越多，所述真空泵8泵轉子的殘餘動能E l 越小，所述真空反應腔1腔體收到的保護越全面。 Based on the structural characteristics of the plasma processing apparatus in the first embodiment, some changes are made to the structure of the gasket 10 in this embodiment, mainly for the deformation space of the gasket 10 . As shown in FIG. 7 , the gasket 10 is provided with a first through hole 102 for mounting fasteners to pass through, and a second through hole 103 and a third through hole 104 are provided at both ends of the gasket 10 for gasket locks. A tight pin 101 passes through and secures the washer 10 . Three hole openings are provided at the first middle position 105 between the first through hole 102 and the second through hole 103 , and the first through hole 105 between the first through hole 102 and the third through hole 104 The second central position 106 is provided with three hole openings, by changing the contact area between the central position of the gasket 10 and the vacuum pump 8 to adjust the first central position 105 and the second central position 106 with the vacuum pump 8 The transient contact stress, thereby changing the absorbed kinetic energy E a at the middle position of the gasket 10 . When the pump rotor of the vacuum pump 8 suddenly stops, the first middle position 105 and the second middle position 106 undergo compression or tension deformation. According to the shock theory, the more kinetic energy energy E a of the pump rotor of the vacuum pump 8 absorbed by the first middle position 105 and the second middle position 106 , that is, the kinetic energy of the pump rotor of the vacuum pump 8 absorbed by the gasket 10 The more energy E a is , the smaller the residual kinetic energy E l of the pump rotor of the vacuum pump 8 is, and the more comprehensive the protection received by the vacuum reaction chamber 1 is.
實施例三 Embodiment three
基於實施例一中的等離子處理裝置的結構特性，本實施例對所述墊片10的結構做出了一些改變，主要針對所述墊片10的形變空間部分作出改變。如圖8所示，所述墊片10開設有第一通孔102供安裝緊固件穿過，在所述墊片10的兩端設置有第二通孔103與第三通孔104供墊圈鎖緊銷101穿過以固定所述墊片10。在所述第一通孔102與所述第二通孔103之間為第一中部位置105，在所述第一通孔102與所述第三通孔104之間為第二中部位置106，所述第一中部位置105和所述第二中部位置106上各開設兩個相向且不接觸的豁口。藉由此設計可調節所述墊片10中部位置的吸收強度，在真空泵8驟停過程中，所述墊片10藉由一定程度上的壓縮變形或拉伸變形，減小所述真空泵8的衝擊動能，從而達到保護所述真空反應腔1與所述真空泵8的目的。 Based on the structural characteristics of the plasma processing apparatus in the first embodiment, some changes are made to the structure of the gasket 10 in this embodiment, mainly for the deformation space of the gasket 10 . As shown in FIG. 8 , the gasket 10 is provided with a first through hole 102 for mounting fasteners to pass through, and a second through hole 103 and a third through hole 104 are provided at both ends of the gasket 10 for a washer lock. A tight pin 101 passes through to secure the washer 10 . Between the first through hole 102 and the second through hole 103 is a first middle position 105, between the first through hole 102 and the third through hole 104 is a second middle position 106, The first middle position 105 and the second middle position 106 are each provided with two facing and non-contacting openings. With this design, the absorption strength of the central part of the gasket 10 can be adjusted. During the sudden stop of the vacuum pump 8, the gasket 10 can reduce the pressure of the vacuum pump 8 by compressive deformation or tensile deformation to a certain extent. Impact kinetic energy, so as to achieve the purpose of protecting the vacuum reaction chamber 1 and the vacuum pump 8 .
儘管本發明的內容已經藉由上述較佳實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在所屬技術領域中具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。 Although the content of the present invention has been described in detail by means of the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those of ordinary skill in the art after reading the foregoing disclosure. Therefore, the protection scope of the present invention should be defined by the appended patent application scope.
1:真空反應腔 1: Vacuum reaction chamber
2:基座 2: base
3:靜電夾盤 3: Electrostatic chuck
4:氣體噴淋裝置 4: Gas spray device
5:氣體供應裝置 5: Gas supply device
6:傳片門 6: film transfer door
7:射頻功率源 7: RF power source
8:真空泵 8: Vacuum pump
9:螺釘 9: screw
10:墊片 10: Gasket
Claims (4)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910601516.4A CN112185788B (en) | 2019-07-04 | 2019-07-04 | Plasma processing device and method thereof |
| CN201910601516.4 | 2019-07-04 |
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| TW202103212A TW202103212A (en) | 2021-01-16 |
| TWI810465B true TWI810465B (en) | 2023-08-01 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1963231A (en) * | 2005-11-10 | 2007-05-16 | 阿尔卡特公司 | Fixing device for a vacuum pump |
| WO2007105785A1 (en) * | 2006-03-15 | 2007-09-20 | Edwards Japan Limited | Molecular pump and flange |
| US7341423B2 (en) * | 2003-08-27 | 2008-03-11 | Edwards Japan Limited | Molecular pump and connecting device |
| US20090068008A1 (en) * | 2007-09-07 | 2009-03-12 | Shimadzu Corporation | Fastening structure and rotary vacuum pump |
| TW201905369A (en) * | 2017-06-30 | 2019-02-01 | 日商富士金股份有限公司 | Valve device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101694210A (en) * | 2009-08-25 | 2010-04-14 | 东莞宏威数码机械有限公司 | Damping device |
| KR101506026B1 (en) * | 2009-12-24 | 2015-03-25 | 스미토모 세이카 가부시키가이샤 | Double vacuum pump apparatus, gas purification system provided with double vacuum pump apparatus, and exhaust gas vibration suppressing device in double vacuum pump apparatus |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7341423B2 (en) * | 2003-08-27 | 2008-03-11 | Edwards Japan Limited | Molecular pump and connecting device |
| CN1963231A (en) * | 2005-11-10 | 2007-05-16 | 阿尔卡特公司 | Fixing device for a vacuum pump |
| WO2007105785A1 (en) * | 2006-03-15 | 2007-09-20 | Edwards Japan Limited | Molecular pump and flange |
| US20090068008A1 (en) * | 2007-09-07 | 2009-03-12 | Shimadzu Corporation | Fastening structure and rotary vacuum pump |
| TW201905369A (en) * | 2017-06-30 | 2019-02-01 | 日商富士金股份有限公司 | Valve device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112185788A (en) | 2021-01-05 |
| TW202103212A (en) | 2021-01-16 |
| CN112185788B (en) | 2023-09-29 |
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