CN112185788B - Plasma processing device and method thereof - Google Patents
Plasma processing device and method thereof Download PDFInfo
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- CN112185788B CN112185788B CN201910601516.4A CN201910601516A CN112185788B CN 112185788 B CN112185788 B CN 112185788B CN 201910601516 A CN201910601516 A CN 201910601516A CN 112185788 B CN112185788 B CN 112185788B
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- vacuum pump
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32889—Connection or combination with other apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention discloses a plasma processing device and a method thereof, wherein the plasma processing device comprises: the vacuum reaction chamber, still set up a vacuum pump in the below of vacuum reaction chamber for with reaction by-product discharge vacuum reaction chamber, plasma processing apparatus contains: a plurality of mounting fasteners for securing the vacuum pump to the vacuum reaction chamber; at least one buffer device is fixed between the vacuum pump and the cavity of the vacuum reaction cavity through the mounting fastener, the buffer device is provided with a deformation space, and the buffer device generates displacement deformation through the deformation space so as to absorb part of kinetic energy of the vacuum pump. The advantages are that: when the plasma processing device suddenly breaks down, the buffer device can absorb more vacuum pump kinetic energy, so that the residual kinetic energy of the vacuum pump received by the vacuum reaction cavity is greatly reduced, the vacuum reaction cavity is effectively protected, and the possibility of safety accidents is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma processing device and a method thereof.
Background
The plasma processing apparatus processes a semiconductor substrate and a substrate of a plasma panel by using the operating principle of a vacuum reaction chamber. The working principle of the vacuum reaction chamber is that reaction gas containing proper etchant or deposition source gas is introduced into the vacuum reaction chamber, then radio frequency energy is input into the vacuum reaction chamber to activate the reaction gas to ignite and maintain plasma so as to respectively etch a material layer on the surface of a substrate or deposit the material layer on the surface of the substrate, and further process the semiconductor substrate and a plasma flat plate. For example, capacitive plasma reactors have been widely used to process semiconductor substrates and display panels in which a capacitive discharge is formed between a pair of parallel electrodes when radio frequency power is applied to one or both of the electrodes.
Reaction byproducts generated during substrate processing may also remain in the vacuum reaction chamber during semiconductor substrate processing. For example, the reaction byproducts may fill areas inside or outside of the processing region below the vacuum reaction chamber. If reaction byproducts reach these areas, they may then corrode, deposit or erode, which may cause particles inside the reaction chamber to stain, thereby reducing the re-use performance of the plasma processing apparatus and possibly shortening the operating life of the reaction chamber or reaction chamber components. Excessive reaction byproducts can affect further processing of the semiconductor substrate by the plasma processing apparatus and are prone to impurity doping. Generally, it is common for those skilled in the art to connect a vacuum pump to the vacuum reaction chamber for discharging the reaction byproducts from the vacuum reaction chamber in time.
The existing plasma processing apparatus generally fixes a vacuum pump on a vacuum reaction chamber cavity directly through a plurality of mounting fasteners, or fixes the vacuum pump on the vacuum reaction chamber cavity through an adapter plate (plate-shaped or annular). However, during the process of etching a semiconductor substrate or a plasma flat panel by a plasma processing apparatus, a rotor of a vacuum pump generally maintains a high rotation speed, and if the rotor of the vacuum pump suddenly fails in a high rotation speed condition, huge kinetic energy of the vacuum pump is directly transferred to a vacuum reaction chamber through a mounting fastener or an adapter plate. If a sudden failure occurs, the huge kinetic energy of the pump rotor of the vacuum pump can be directly transmitted to the cavity of the vacuum reaction cavity through the mounting fasteners. The vacuum pump suddenly stops, and the huge kinetic energy of the pump rotor easily causes the vacuum reaction cavity to be damaged by impact, or the installation fastener or the adapter plate is broken due to the overlarge kinetic energy generated by the vacuum pump, so that the pump body of the vacuum pump carries larger kinetic energy to fly out, the production accident is easy to cause, and the personal safety problem is easy to cause.
Disclosure of Invention
The invention aims to provide a plasma processing device and a method thereof, which combine a vacuum reaction cavity, a radio frequency power supply, a vacuum pump, a mounting fastener, a buffer device and the like, and fix the vacuum pump on the vacuum reaction cavity by utilizing the buffer device and the mounting fastener, so that when the plasma processing device suddenly fails, the kinetic energy of the vacuum pump can be transmitted to the mounting fastener and the vacuum reaction cavity through the buffer device. Through buffer's design, can absorb more vacuum pump kinetic energy, make the vacuum pump residual kinetic energy that vacuum reaction cavity received reduce greatly, protected vacuum reaction cavity effectively, reduced the possibility of incident emergence.
In order to achieve the above purpose, the present invention is realized by the following technical scheme:
a plasma processing apparatus comprising a vacuum reaction chamber having a susceptor for supporting a substrate therein, a vacuum pump being further disposed below the vacuum reaction chamber for discharging reaction byproducts out of the vacuum reaction chamber, the plasma processing apparatus comprising:
a plurality of mounting fasteners for securing the vacuum pump to the cavity of the vacuum reaction chamber;
at least one buffer device is fixed between the vacuum pump and the cavity of the vacuum reaction cavity through the mounting fastener, the buffer device is provided with a deformation space, and the buffer device generates displacement deformation through the deformation space so as to absorb part of kinetic energy of the vacuum pump.
Preferably, the cushioning means is made of plastic material or steel or aluminium or copper.
Preferably, the buffer device is a pad.
Preferably, the spacer is provided with at least one first aperture for insertion of the mounting fastener to secure the vacuum pump.
Preferably, the gasket further includes a second aperture that receives a washer locking pin or screw to secure the gasket to the vacuum pump.
Preferably, the gasket further comprises a third opening which accommodates a gasket locking pin or screw to secure the gasket to the vacuum pump, the second and third openings being located on either side of the first opening.
Preferably, at least one deformation space is arranged between the first opening and the second opening of the gasket, and the deformation space is used for absorbing part of kinetic energy of the vacuum pump through extrusion or stretching when the vacuum pump is suddenly changed in speed.
Preferably, the deformation space is a hole or a gap arranged between the first opening and the second opening.
A method of processing a plasma processing apparatus, the method comprising:
a buffer device is arranged on each of the plurality of mounting fasteners;
fixing the vacuum pump on the cavity of the vacuum reaction cavity through the mounting fastener;
in the process of etching the substrate by the plasma processing device, a rotor of the vacuum pump rotates;
when the vacuum pump suddenly stops, the buffer device is used for absorbing part of kinetic energy of the vacuum pump by generating displacement deformation.
Preferably, the buffer device is a pad.
Preferably, a processing method of a plasma processing apparatus,
the energy level E absorbed by the damping device due to deformation a The method comprises the following steps:
wherein df is the instantaneous contact stress of the buffer device on the vacuum pump, dl is the instantaneous displacement of the buffer device;
kinetic energy E of the vacuum pump itself p The size is as follows:wherein I is the rotational inertia of the rotor of the vacuum pump, and omega is the rotational speed of the rotor of the vacuum pump;
residual kinetic energy E of pump rotor of vacuum pump l The size is as follows:
E l ＝E p -E a 。
compared with the prior art, the invention has the following advantages:
(1) The vacuum pump is fixed on the vacuum reaction cavity through the buffer device and the mounting fastener, so that when the plasma processing device suddenly fails, the kinetic energy of the vacuum pump can be transmitted to the mounting fastener and the vacuum reaction cavity through the buffer device;
(2) Through the design of the buffer device, the buffer device can absorb more vacuum pump kinetic energy, so that the residual kinetic energy of the vacuum pump received by the vacuum reaction cavity is greatly reduced, the vacuum reaction cavity is effectively protected, and the possibility of safety accidents is reduced;
(3) Under the condition of emergency stop of the vacuum pump, the buffer device is deformed and damaged to a certain extent by proper force, so that the cavity of the vacuum reaction cavity and the vacuum pump are protected, and the influence of the plasma processing device on surrounding equipment and staff is greatly reduced;
(4) The buffering device is simple in structure, small parts can meet functions, and space requirements in design can be reduced.
Drawings
FIG. 1 is a schematic view of a plasma processing apparatus according to the present invention;
FIG. 2 is a diagram showing the connection between a vacuum reaction chamber and a vacuum pump in the plasma processing apparatus according to the present invention;
FIG. 3 is a top view of the vacuum pump and vacuum reaction chamber connection of the present invention;
FIG. 4 is a top view of the cushioning device of the present invention in connection with a mounting fastener;
FIG. 5 is a cross-sectional view of the attachment of the cushioning device to the mounting fastener of the present invention;
FIG. 6 shows a buffer device before and after absorbing impact energy according to a first embodiment of the present invention;
FIG. 7 is a diagram illustrating a buffer device according to a second embodiment of the present invention;
fig. 8 shows a buffer device in a third embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in this document, the terms "comprises," "comprising," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the statement "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article or terminal device comprising the element.
It is noted that the drawings are in a very simplified form and utilize non-precise ratios for convenience and clarity in aiding in the description of one embodiment of the invention.
Example 1
Referring to fig. 1, a schematic structure of a plasma processing apparatus according to the present invention is shown, wherein the plasma processing apparatus comprises a vacuum reaction chamber 1, the vacuum reaction chamber 1 comprises a base 2 for supporting a substrate, a rf power source 7 is connected to and supplies rf power to the base 2, and the base 2 comprises an electrostatic chuck 3 for placing the substrate to be processed. A wafer transfer door 6 is arranged on the side wall of the vacuum reaction chamber 1, namely, the wafer transfer door 6 is an opening on the side wall of one side of the reaction chamber and is used for transferring wafers between the inside and the outside of the reaction chamber. The vacuum reaction chamber 1 comprises a substantially cylindrical reaction chamber side wall made of metal materials, and a gas spraying device 4 is arranged above the reaction chamber side wall, and the gas spraying device 4 is connected with a gas supply device 5. The reaction gas in the gas supply device 5 enters the vacuum reaction chamber 1 through the gas shower device 4.
The radio frequency power of the radio frequency power source 7 is applied to the base 2, an electric field for dissociating the reaction gas into plasma is generated in the vacuum reaction chamber 1, and the plasma contains a large amount of active particles such as electrons, ions, atoms in an excited state, molecules, free radicals and the like, and the active particles can react with the surface of the substrate to be processed in various physical and chemical ways, so that the appearance of the surface of the substrate is changed, and the etching process is completed. A vacuum pump 8 is also arranged below the vacuum reaction chamber 1, and the vacuum pump 8 is used for discharging reaction byproducts out of the vacuum reaction chamber 1.
As shown in fig. 1, 3 and 4, the vacuum pump 8 of the present invention is fixed on the cavity of the vacuum reaction chamber 1 by a plurality of mounting fasteners, the mounting fasteners penetrate through a buffer device to be connected with the cavity of the vacuum reaction chamber 1, the buffer device is fixed between the vacuum pump and the cavity of the vacuum reaction chamber by the mounting fasteners, the buffer device is provided with a deformation space, and the buffer device generates displacement deformation by the deformation space to absorb part of kinetic energy of the vacuum pump.
In this embodiment, the mounting fastener is a screw 9, and the buffer device is a spacer 10. The gasket 10 is fixed to the cavity of the vacuum reaction chamber 1 by a pair of gasket locking pins 101 without edge tilting. As shown in fig. 3, all gaskets 10 are used in full circle when the vacuum pump 8 is fixed by the screw 9 in full circle.
Typical gaskets 10 are typically metal, rubber materials, composite materials, or elastomeric materials such as steel, aluminum, or copper. In this embodiment, the gasket 10 is made of plastic material which is subjected to the impact of the kinetic energy of the vacuum pump 8 for a longer period of time and absorbs more kinetic energy.
The length and thickness of the shims 10 are limited to the physical space of the mounting location, with the length and thickness range depending on the average kinetic energy that each shim 10 is required to absorb. Too large or too thick gasket 10 can cause too large impact force of gasket 10 itself, which not only cannot absorb kinetic energy of pump rotor of vacuum pump 8, but also increases kinetic energy pressure of vacuum reaction chamber 1 and vacuum pump 8. The spacer 10 is too small or too thin, which tends to cause a problem that the kinetic energy of the vacuum pump 8 cannot be absorbed sufficiently, and when the vacuum pump 8 is suddenly stopped, the spacer 10 is broken and the impact of the vacuum pump 8 is not yet completed.
As shown in fig. 4 and 5 in combination, in the present embodiment, a single spacer 10 is connected to the screw 9 in a cross-sectional view and a top view, the spacer 10 has a first through hole 102, which is located in the middle of the spacer 10, and the screw 9 passes through the first through hole 102 to fix the vacuum pump 8 on the cavity of the vacuum reaction chamber 1.
The gasket 10 further comprises a second through hole 103 and a third through hole 104 located at two sides of the first through hole 102, and the second through hole 103 and the third through hole 104 are used for inserting two gasket locking pins 101 to fix the gasket 10 on the vacuum pump 8.
The gasket 10 in this embodiment is provided with a deformation space, wherein a first middle position 105 is located between the first through hole 102 and the second through hole 103, a second middle position 106 is located between the first through hole 102 and the third through hole 104, and the first middle position 105 and the second middle position 106 are deformation spaces of the gasket 10 in this embodiment. The first middle position 105 and the second middle position 106 are respectively provided with an elliptical fourth through hole 107 and a elliptical fifth through hole 108, and the designs of the two middle positions are used for adjusting the strength of the deformation space of the gasket 10 for absorbing kinetic energy, so that the gasket 10 is subjected to displacement deformation by a certain distance with the force which can be borne by the cavity of the vacuum reaction cavity 1 and the vacuum pump 8 in the process of being impacted by the vacuum pump 8, thereby achieving the purpose of absorbing the kinetic energy of the vacuum pump 8. It should be noted that the design of the first middle position 105 and the second middle position 106 is not limited to this, and may be provided with no through hole or other designs, as long as the contact area between the gasket 10 and the vacuum pump 8 can be changed, i.e. the instantaneous contact stress of the gasket 10 is changed, and in summary, as long as the design of adjusting the absorption kinetic energy of the gasket 10 is within the protection scope of the present invention.
As shown in fig. 6, the center of gravity of the gasket locking pin 101 of the gasket 10 follows the pump body of the vacuum pump 8, and the center of gravity of the first middle position 105 between the first through hole 102 and the second through hole 103 and the center of gravity of the second middle position 106 between the first through hole 102 and the third through hole 104 follows the cavity of the vacuum reaction chamber 1 in the high-speed operation condition of the pump rotor of the vacuum pump 8 of the plasma processing apparatus, which is a schematic diagram of the gasket 10 before and after the impact of the kinetic energy of the vacuum pump 8. When the vacuum pump 8 is suddenly stopped due to a failure, the portion of the gasket 10 in the rotation direction of the vacuum pump 8 is compressively deformed, that is, the edge of the fourth through hole 107 of the first middle position 105 is compressively deformed, and the other portion thereof not in the rotation direction is stretched to be deformed, that is, the edge of the fifth through hole 108 of the second middle position 106 is deviated to the compressively deformed side to be stretched to be deformed.
According to the impact theory, the energy E absorbed by the deformation of the pad 10 due to the deformation a The method comprises the following steps:
where df is the instantaneous contact stress of the gasket 10 against the vacuum pump 8, and dl is the instantaneous displacement of the gasket 10.
While the kinetic energy E of the vacuum pump 8 itself p The size is as follows:where I is the moment of inertia of the pump rotor of the vacuum pump 8, and ω is the rotational speed of the pump rotor of the vacuum pump 8.
Therefore, the vacuum pump 8 pump rotor residual kinetic energy E l The size is as follows: e (E) l ＝E p -E a . The vacuum pump 8 pump rotor kinetic energy E absorbed by the gasket 10 a The more the residual kinetic energy E l The smaller the vacuum reaction chamber 1 is, the stronger the protection of the chamber is.
As shown in fig. 6, df is the instantaneous contact stress of the gasket 10, Δl is the final value of the integral summation of the instantaneous displacement dl of the gasket 10, that is, the final value of the deformation of the gasket 10 such that the centerline shifts, that is, the centerline position of the gasket 10 shifts Δl toward the pump rotor operation direction of the vacuum pump 8.
The pump rotor of the vacuum pump 8 running at high speed is suddenly stopped, which is similar to the sudden braking principle in life. During the high-speed running process of the vehicle, the vehicle is braked with great force, and the vehicle can be stopped quickly, but people in the vehicle can be injured due to great inertial impact force or kinetic energy. The vehicle is slowly braked, the sliding distance of the vehicle is longer, but the impact on the vehicle and passengers is smaller.
The buffer device such as the gasket 10 is added at the joint of the vacuum pump 8 and the vacuum reaction chamber 1, so that the gasket 10 can bear deformation and damage to a certain extent by proper force under the condition that the pump rotor of the vacuum pump 8 is suddenly stopped, thereby achieving the purpose of protecting the chamber of the vacuum reaction chamber 1 and the vacuum pump 8 at the same time, absorbing the residual kinetic energy of the pump rotor of the vacuum pump 8 by deforming the deformation space of the gasket 10, reducing the damage to the chamber of the vacuum reaction chamber 1 and the vacuum pump 8, and greatly reducing the influence to surrounding equipment and staff.
Example two
Based on the structural characteristics of the plasma processing apparatus in the first embodiment, the present embodiment makes some changes to the structure of the gasket 10, mainly to the deformation space portion of the gasket 10. As shown in fig. 7, the gasket 10 is provided with a first through hole 102 for the installation fastener to pass through, and two ends of the gasket 10 are provided with a second through hole 103 and a third through hole 104 for the gasket locking pin 101 to pass through to fix the gasket 10. Three hole openings are arranged at a first middle position 105 between the first through hole 102 and the second through hole 103, three hole openings are arranged at a second middle position 106 between the first through hole 102 and the third through hole 104, and instantaneous contact stress between the first middle position 105 and the second middle position 106 and the vacuum pump 8 is regulated by changing the contact area between the middle position of the gasket 10 and the vacuum pump 8, so that absorption kinetic energy E of the middle position of the gasket 10 is changed a . In the event of a sudden pump rotor stop of the vacuum pump 8, the first intermediate position 105 and the second intermediate position 106 are deformed in a compressed or stretched manner. According to the impact theory, the first and second intermediate positions 105 and 106 absorb the kinetic energy E of the pump rotor of the vacuum pump 8 a The more, i.e. the kinetic energy E of the pump rotor of the vacuum pump 8 absorbed by the gasket 10 a The more the residual kinetic energy E of the pump rotor of the vacuum pump 8 l The smaller the vacuum reaction chamber 1 cavityThe more comprehensive the protection received.
Example III
Based on the structural characteristics of the plasma processing apparatus in the first embodiment, the present embodiment makes some changes to the structure of the gasket 10, mainly to the deformation space portion of the gasket 10. As shown in fig. 8, the gasket 10 is provided with a first through hole 102 for the installation fastener to pass through, and two ends of the gasket 10 are provided with a second through hole 103 and a third through hole 104 for the gasket locking pin 101 to pass through so as to fix the gasket 10. A first middle position 105 is arranged between the first through hole 102 and the second through hole 103, a second middle position 106 is arranged between the first through hole 102 and the third through hole 104, and two opposite and non-contact openings are respectively formed in the first middle position 105 and the second middle position 106. Through the design, the absorption strength of the middle position of the gasket 10 can be adjusted, and in the sudden stop process of the vacuum pump 8, the gasket 10 reduces the impact kinetic energy of the vacuum pump 8 through compression deformation or tensile deformation to a certain extent, so that the purpose of protecting the vacuum reaction cavity 1 and the vacuum pump 8 is achieved.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (5)
1. A plasma processing apparatus comprising a vacuum reaction chamber having a susceptor for supporting a substrate therein, a vacuum pump being further disposed below the vacuum reaction chamber for discharging reaction byproducts out of the vacuum reaction chamber, the plasma processing apparatus comprising:
a plurality of mounting fasteners for securing the vacuum pump to the cavity of the vacuum reaction chamber;
the buffer device is fixed between the vacuum pump and the cavity of the vacuum reaction cavity through the mounting fastener and is provided with a deformation space, and the buffer device generates displacement deformation through the deformation space so as to absorb part of kinetic energy of the vacuum pump;
the buffer device is a gasket;
the gasket is provided with at least one first opening for the insertion of the mounting fastener to fix the vacuum pump;
the gasket further includes a second opening that receives a washer locking pin or screw to secure the gasket to the vacuum pump;
the gasket further comprises a third opening which accommodates a gasket locking pin or screw to fix the gasket to the vacuum pump, and the second opening and the third opening are positioned at two sides of the first opening;
at least one deformation space is arranged between the first opening and the second opening of the gasket, at least one deformation space is arranged between the first opening and the third opening of the gasket, and the deformation space is used for absorbing part of kinetic energy of the vacuum pump through extrusion or stretching when the vacuum pump changes speed suddenly.
2. The plasma processing apparatus according to claim 1, wherein,
the cushioning device is made of plastic material or steel or aluminum or copper.
3. The plasma processing apparatus according to claim 1, wherein,
the deformation space is a hole or a notch arranged between the first opening and the second opening.
4. A processing method based on the plasma processing apparatus according to any one of claims 1 to 3, characterized in that the method comprises the following processes:
a buffer device is arranged on each of the plurality of mounting fasteners;
fixing the vacuum pump on the cavity of the vacuum reaction cavity through the mounting fastener;
in the process of etching the substrate by the plasma processing device, a rotor of the vacuum pump rotates;
when the vacuum pump suddenly stops, the buffer device is used for absorbing part of kinetic energy of the vacuum pump by generating displacement deformation.
5. The method of processing the plasma processing apparatus according to claim 4, wherein,
the energy level E absorbed by the damping device due to deformation a The method comprises the following steps:
wherein df is the instantaneous contact stress of the buffer device on the vacuum pump, dl is the instantaneous displacement of the buffer device;
kinetic energy E of the vacuum pump itself p The size is as follows:wherein I is the rotational inertia of the rotor of the vacuum pump, and omega is the rotational speed of the rotor of the vacuum pump;
residual kinetic energy E of the vacuum pump rotor l The size is as follows:
E l ＝E p -E a 。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910601516.4A CN112185788B (en) | 2019-07-04 | 2019-07-04 | Plasma processing device and method thereof |
| TW109119231A TWI810465B (en) | 2019-07-04 | 2020-06-08 | Plasma processing apparatus and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910601516.4A CN112185788B (en) | 2019-07-04 | 2019-07-04 | Plasma processing device and method thereof |
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| Publication Number | Publication Date |
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| CN112185788A CN112185788A (en) | 2021-01-05 |
| CN112185788B true CN112185788B (en) | 2023-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910601516.4A Active CN112185788B (en) | 2019-07-04 | 2019-07-04 | Plasma processing device and method thereof |
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| CN (1) | CN112185788B (en) |
| TW (1) | TWI810465B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1963231A (en) * | 2005-11-10 | 2007-05-16 | 阿尔卡特公司 | Fixing device for a vacuum pump |
| CN101694210A (en) * | 2009-08-25 | 2010-04-14 | 东莞宏威数码机械有限公司 | Damping device |
| WO2011078207A1 (en) * | 2009-12-24 | 2011-06-30 | 住友精化株式会社 | Double vacuum pump apparatus, gas purification system provided with double vacuum pump apparatus, and exhaust gas vibration suppressing device in double vacuum pump apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4499388B2 (en) * | 2003-08-27 | 2010-07-07 | エドワーズ株式会社 | Molecular pump and coupling device |
| JP4949746B2 (en) * | 2006-03-15 | 2012-06-13 | エドワーズ株式会社 | Molecular pump and flange |
| US20090068008A1 (en) * | 2007-09-07 | 2009-03-12 | Shimadzu Corporation | Fastening structure and rotary vacuum pump |
| US20200149639A1 (en) * | 2017-06-30 | 2020-05-14 | Fujikin Incorporated | Valve device |
-
2019
- 2019-07-04 CN CN201910601516.4A patent/CN112185788B/en active Active
-
2020
- 2020-06-08 TW TW109119231A patent/TWI810465B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1963231A (en) * | 2005-11-10 | 2007-05-16 | 阿尔卡特公司 | Fixing device for a vacuum pump |
| CN101694210A (en) * | 2009-08-25 | 2010-04-14 | 东莞宏威数码机械有限公司 | Damping device |
| WO2011078207A1 (en) * | 2009-12-24 | 2011-06-30 | 住友精化株式会社 | Double vacuum pump apparatus, gas purification system provided with double vacuum pump apparatus, and exhaust gas vibration suppressing device in double vacuum pump apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI810465B (en) | 2023-08-01 |
| TW202103212A (en) | 2021-01-16 |
| CN112185788A (en) | 2021-01-05 |
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