TWI808610B - Light emitting apparatus - Google Patents
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 97
- 239000002184 metal Substances 0.000 claims abstract description 97
- 239000003086 colorant Substances 0.000 claims abstract description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000003292 glue Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 241
- 239000000463 material Substances 0.000 description 52
- 239000000758 substrate Substances 0.000 description 48
- 238000000034 method Methods 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 10
- 238000007788 roughening Methods 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
- 239000010954 inorganic particle Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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Abstract
Description
本發明係一種發光裝置。The invention is a light emitting device.
習知發光二極體(LED)封裝技術係先在晶片座(sub-mount)上點膠,再將發光二極體晶片固定於晶片座上,進而形成一發光二極體元件,此步驟稱為固晶(Die Bonding)。固晶膠材主要為具導電性的銀膠或其他非導電性環氧樹脂。之後將發光二極體元件組合於電路板上。覆晶(flip chip)式的發光二極體係使二極體結構中的p型半導體導電層與n型半導體導電層,暴露於同一側,以能將陰、陽極電極製作於二極體結構的同一側上,因而可直接將設置有陰、陽極電極的發光二極體結構覆置於一錫料(solder)上。如此,能免除採用傳統金屬拉線(wire bonding)的需求。然而習知之覆晶式發光二極體仍需透過切割、固晶等封裝步驟,才能與電路板連結。因此,若覆晶式發光二極體的電極具有足夠大的接觸面積,便能夠省略習知之封裝步驟。The conventional light-emitting diode (LED) packaging technology is to first dispense glue on the sub-mount, and then fix the light-emitting diode chip on the sub-mount to form a light-emitting diode element. This step is called die bonding. The die-bonding adhesive is mainly conductive silver glue or other non-conductive epoxy resin. Then assemble the light emitting diode element on the circuit board. The flip chip light-emitting diode system exposes the p-type semiconductor conductive layer and the n-type semiconductor conductive layer in the diode structure on the same side, so that the cathode and anode electrodes can be fabricated on the same side of the diode structure, so that the light-emitting diode structure with the cathode and anode electrodes can be directly covered on a solder. In this way, the need for conventional metal wire bonding can be eliminated. However, conventional flip-chip light-emitting diodes still need to go through packaging steps such as dicing and die bonding before they can be connected to the circuit board. Therefore, if the electrodes of the flip-chip light-emitting diode have a sufficiently large contact area, the conventional packaging steps can be omitted.
一般傳統LED的操作電流約為數十至數百個毫安培(mA),但亮度往往不足以應付一般照明所需。若組合大量的LED以提高亮度,則LED照明元件的體積將增加而導致市場上之競爭性降低。因此,提昇單顆LED之晶粒亮度,成為必然之趨勢。然而,當LED朝向高亮度發展時,單一LED的操作電流及功率增加為傳統LED的數倍至數百倍,例如,一個高亮度的LED的操作電流約為數百毫安培至數個安培,使得LED所產生的熱問題不容忽視。LED的性能會因為”熱”而降低,例如熱效應會影響LED的發光波長,半導體特性也因熱而產生亮度衰減,更嚴重時甚至造成元件損壞。因此,高功率LED如何散熱成為LED的重要議題。Generally, the operating current of traditional LEDs is about tens to hundreds of milliamps (mA), but the brightness is often not enough to meet the needs of general lighting. If a large number of LEDs are combined to increase the brightness, the volume of the LED lighting element will increase and the competition in the market will decrease. Therefore, it is an inevitable trend to increase the brightness of a single LED. However, when LEDs develop towards high brightness, the operating current and power of a single LED increase several to hundreds of times that of traditional LEDs. For example, the operating current of a high brightness LED is about hundreds of milliamps to several amperes, making the thermal problems generated by LEDs not to be ignored. The performance of the LED will be reduced due to "heat". For example, the thermal effect will affect the light-emitting wavelength of the LED, and the semiconductor characteristics will also cause brightness attenuation due to heat, and even cause component damage in severe cases. Therefore, how to dissipate heat from high-power LEDs has become an important issue for LEDs.
美國專利申請號2004/0188696以及2004/023189(為2004/0188696之分割案)中分別揭示了一種使用表面黏著技術 (Surface Mount Technology, SMT)的LED封裝結構與方法,其中每一封裝結構含有一LED晶片。每一LED晶片先以覆晶的形式,藉由凸塊(bonding bump)黏著於在一晶片座(sub-mount)之前側(front side)上。在晶片座中具有預先鑿出之開孔陣列,並填以金屬以形成通道陣列(via array)。此晶片的電極可藉由此通道陣列連接至晶片座的具有錫料的後側(back side)。此通道陣列亦可作為LED晶片之散熱路徑。在每一LED晶片與次基板黏著之後,再將次基板切割,以進行後續之LED封裝。U.S. Patent Application Nos. 2004/0188696 and 2004/023189 (which are divisions of 2004/0188696) respectively disclose a LED packaging structure and method using Surface Mount Technology (SMT), wherein each packaging structure contains an LED chip. Each LED chip is first bonded on the front side of a sub-mount by bonding bumps in the form of flip-chip. There is an array of holes drilled in advance in the wafer seat, and filled with metal to form a via array. The electrodes of the chip can be connected by the via array to the back side of the chip holder with solder. The channel array can also be used as a heat dissipation path for the LED chip. After each LED chip is bonded to the sub-substrate, the sub-substrate is cut for subsequent LED packaging.
然而,在美國專利申請號2004/0188696以及2004/023189中之晶片座,需鑿出填以金屬的通道陣列(via array),增加製程成本。此外,每一LED晶片黏著於晶片座的步驟,也會增加製作的複雜度。因此,若能具有一種發光二極體,不需晶片座,亦具有良好的散熱路徑,可在市場上具有優勢。However, in the wafer holders of US Patent Application Nos. 2004/0188696 and 2004/023189, a via array filled with metal needs to be drilled, which increases the manufacturing cost. In addition, the step of adhering each LED chip to the chip holder will also increase the complexity of manufacturing. Therefore, if there is a light-emitting diode that does not require a chip holder and also has a good heat dissipation path, it will have an advantage in the market.
本發明揭示一種發光裝置,包含一發光元件陣列,該發光元件陣列包含數個發光元件,所述數個發光元件中每個發光元件包含對應的第一金屬層及第二金屬層,所述數個發光元件至少包含兩個發出不同顏色的發光元件;一電路載板,包含數個導電通道;以及一異方導電膠,填充於該發光元件陣列以及該電路載板之間和該第一金屬層以及第二金屬層之間。The invention discloses a light-emitting device, comprising a light-emitting element array, the light-emitting element array includes several light-emitting elements, each of the light-emitting elements includes a corresponding first metal layer and a second metal layer, and the several light-emitting elements include at least two light-emitting elements emitting different colors; a circuit carrier board includes several conductive channels; and a heterogeneous conductive glue is filled between the light-emitting element array and the circuit carrier board and between the first metal layer and the second metal layer.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。在圖式中,元件之形狀或厚度可擴大或縮小。需特別注意的是,圖中未繪示或描述之元件,可以是熟習此技藝之人士所知之形式。本發明所列舉之各實施例僅用以說明本發明,並非用以限制本發明之範圍。任何人對本發明所作之任何顯而易知之修飾或變更皆不脫離本發明之精神與範圍。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings. In the drawings, the shape or thickness of elements may be enlarged or reduced. It should be noted that components not shown or described in the figure may be in forms known to those skilled in the art. The various embodiments listed in the present invention are only used to illustrate the present invention, and are not intended to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention will not depart from the spirit and scope of the present invention.
參照第1A第至第1E圖,係為依照本發明實施例之一種發光元件的製作方法流程各階段所對應之剖面圖。在第1A圖中,首先形成一發光結構100,其包含一基材11、一第一導電層102以做為一包覆層、一活性層104位於第一導電層102上以作為一發光層、一第二導電層106於此活性層104上以作為另一包覆層。較佳地,如第1A圖所示,一電極或接合墊(bonding pad)107a位於第一導電層102之暴露的部分上,另一電極或接合墊107b位在第二導電層106上。電極或接合墊107a與107b之材料(例如鋁)與製作方法應為習此技藝者所熟知,在此不加贅述。此外,在一實施例中,發光結構100更包含一保護層(passivation layer)120,以保護此發光結構100。此保護層120的材料(例如二氧化矽)與製作方法亦為習此技藝者所熟知,在此加不贅述。Referring to FIG. 1A to FIG. 1E , they are cross-sectional views corresponding to each stage of a manufacturing method of a light-emitting element according to an embodiment of the present invention. In FIG. 1A, a light-emitting structure 100 is first formed, which includes a substrate 11, a first
在一實施例中,第一導電層102為一n型半導體導電層,而第二導電層106為一p型半導體導電層。n型半導體導電層102、p型半導體導電層106為任何習知或未來中可見者之半導體材料,較佳者為Ⅲ-Ⅴ(三/五)族化合物半導體,例如氮化鋁鎵銦(Al
xGa
yln
(1 - x - y)N)或磷化鋁鎵銦(Al
xGa
yIn
(1-x-y)P),其中0≦x≦1,0≦y≦1,0≦x+y≦1,並視情況進一步被p/n型摻質所摻雜。而活性層104亦可使用習知之半導體材料與結構,例如材料可為氮化鋁鎵銦(Al
xGa
yln
(1 - x - y)N)或磷化鋁鎵銦(Al
xGa
yln
(1 - x - y)P)等,而結構可為單量子井(Single Quantum Well, SQW)、多重量子井(Multiple Quantum Well, MQW)與雙異質(Double Heterosture, DH),其發光原理與機制係為習知之技術,在此不再贅述。此外,發光結構100可藉由有機金屬化學氣相沉積(MOCVD)、分子束磊晶成長(molecular beam epitaxy, MBE)製程、或氫化物氣相磊晶成長(hydride vapor phase epitaxy,HVPE)製程等製作。
In one embodiment, the first
接著,如第1B圖所示,形成一第一介電層122於此發光結構100上。較佳地,第一介電層122為一透明介電層,且其厚度D≦20μm,藉此有效地傳導發光結構100所產生之熱。第一介電層122的材料可為二氧化矽(SiO
2)、氮化矽(Si
3N
4)、或是其組合,而其可藉由MOCVD或是MBE製作。
Next, as shown in FIG. 1B , a first
之後,參見第1C圖,形成一第二介電層140於第一介電層122上。第二介電層140的材料可為二氧化矽、氮化矽、聚亞醯胺(polyimide)、 BCB(bisbenzocyclobutene)以及光阻劑(photoresist)中選擇其一。較佳地,第二介電層140之厚度約25μm,係藉由一印刷技術而形成。After that, referring to FIG. 1C , a second dielectric layer 140 is formed on the first
參見第1D圖,在第二介電層140形成之後,形成金屬層160,金屬層160位於發光結構100上並電性接觸第一導電層102,且部分之金屬層160位於第一介電層122上;以及形成金屬層162,金屬層162位於發光結構100上並電性接觸第二導電層106,且部分之金屬層162位於第一介電層122上。其中,第一介電層122與第二介電層140隔絕金屬層160與金屬層162。金屬層160或金屬層162的材料可選自金(Au)、鋁(Al)、銀(Ag) 、其等之合金,或其他習知的金屬。較佳地,金屬層160與金屬層162係藉由一印刷技術或電鍍而共同形成。經由上述步驟,即完成發光元件10。Referring to FIG. 1D, after the second dielectric layer 140 is formed, a metal layer 160 is formed, the metal layer 160 is located on the light emitting structure 100 and electrically contacts the first
在一實施例中,第一介電層122為一透明介電層,而第一介電層122與金屬層160及/或金屬層162之接觸面供反射發光結構100發出之光,因而可有效提升發光元件10之光輸出強度。此外,金屬層160及/或金屬層162亦作為發光結構100之散熱路徑,當金屬層160及金屬層162具有較大的接觸面積A1、A2,也有助於有效且快速的散熱。In one embodiment, the first
參見第1E圖,形成如同第1D圖所示之結構之後,發光元件的製作方法更包含一移除基材11之步驟,藉以暴露出第一導電層102。基材11可以例如是一藍寶石基材或是砷化鎵基材。當基材11為藍寶石基材,可藉由準分子雷射(excimer laser)移除基材11。準分子雷射可以為一具有能量為400毫焦耳/平方公分(mJ/cm
2)、波長為248奈米以及脈衝寬度(pulse width)為38奈秒(ns)的氟化氪(KrF)準分子雷射。在較高的溫度中,例如60℃,當準分子雷射照射在藍寶石基材上時,藍寶石基材被移除以暴露出第一導電層102。另外,當基材11為砷化鎵基材,一比例為1:35之氨水(NH
4OH)與過氧化氫(H
2O
2)的溶液或是一比例為5:3:5之磷酸(H
3PO
4)、過氧化氫(H
2O
2)與水的溶液可以用於移除砷化鎵基材,藉以暴露出第一導電層102。
Referring to FIG. 1E , after forming the structure shown in FIG. 1D , the manufacturing method of the light emitting device further includes a step of removing the substrate 11 to expose the first
移除基材11之後,發光元件的製作方法更包含粗化第一導電層102的表面102a。例如,當第一導電層102為一氮化鋁鎵銦(Al
xGa
yln
(1 - x - y )N)層,其表面102a可以藉由蝕刻液粗化,蝕刻液可例如為氫氧化鉀(KOH)溶液。此外,當第一導電層102為一磷化鋁鎵銦(Al
xGa
yIn
(1-x-y)P)層,一鹽酸(HCl)以及磷酸的溶液可用於粗化第一導電層102的表面102a,粗化時間可例如為15秒。第一導電層102的粗化表面102a可降低發生全反射的可能性,藉以增加發光元件的光取出效率。
After removing the base material 11 , the manufacturing method of the light-emitting device further includes roughening the surface 102 a of the first
第1E圖所示之發光元件10以及第1D圖所示之發光元件10a、10b、10c提供足夠大的接觸面積(較佳為至少佔據發光元件10截面積之一半),發光元件10a、10b、10c係利用錫料(solder)12直接與電路載板13連接,而不需要固晶(Die Bonding)與金屬拉線(Wire Bonding)等過程。在一實施例中,發光元件10a發出紅光(R)、發光元件10b發出綠光(G)、發光元件10c發出藍光(B),三者分別與電路載板13連接以供影像顯示之用途。The light-emitting element 10 shown in FIG. 1E and the light-emitting
參照第2A圖至第2D圖,係為依照本發明實施例之一種發光元件陣列的製作方法流程各階段所對應之剖面圖。在第2A圖中,首先提供一基材21,例如一藍寶石(Sapphire)基材、砷化鎵(GaAs)基材、或是其他習此技藝者所熟知之基材與其組合。接著,在基材21上形成複數個發光結構200a、200b、與200c。發光結構200a、200b、與200c的材料與製作方法可參考第1A圖至第1D圖的發光結構100。相似地,發光結構200a、200b、與200c可藉由有機金屬化學氣相沉積(MOCVD)製程、分子束磊晶成長(molecular beam epitaxy, MBE)製程、或氫化物氣相磊晶成長(hydride vapor phase epitaxy, HVPE)製程等製作。Referring to FIG. 2A to FIG. 2D , they are cross-sectional views corresponding to each stage of the manufacturing method of a light-emitting element array according to an embodiment of the present invention. In FIG. 2A , a
接著,如第2B圖所示,形成一介電層222a於發光結構200a上、形成一介電層222b於發光結構200b上、形成一介電層222c於發光結構200c上。較佳地,如同第1B圖所示之介電層122,介電層222a、222b、222c為一透明介電層,且其厚度D≦20μm,藉此有效地傳導發光結構200a、200b、200c所產生之熱。介電層222a、222b、222c的材料可為二氧化矽、氮化矽或其等之組合,而其可藉由MOCVD或是MBE製作。Next, as shown in FIG. 2B, a
之後,參見第2C圖,形成介電層240a於介電層222a上、形成介電層240b於介電層222b上、形成介電層240c於介電層222c上。介電層240a、240b、240c的材料可為二氧化矽、氮化矽、聚亞醯胺(polyimide)、BCB(bisbenzocyclobutene)以及光阻劑(photoresist)中選擇其一。較佳地,如同第1C圖所示之介電層第二140,介電層240a、240b、240c之厚度分別約為25μm,且係藉由一印刷技術而形成。在一實施例中,在發光結構200a、200b、200c之間,更形成一介電層280,藉以電絕緣發光元件20a、20b、與20c(如第2D圖所示)。在此實施例中,介電層280之材料與介電層240a、240b、240c的材料相同,例如聚亞醯胺,並利用一製程(例如一印刷技術)與介電層240a、240b、240c共同形成。在另一實施例中,介電層280之材料不同於介電層240a、240b、240c的材料,且藉由不同製程形成。After that, referring to FIG. 2C, a
參見第2D圖,形成金屬層260a、260b、260c;以及形成金屬層262a、262b、262c。金屬層260a、260b、260c、262a、262b、與262c的材料可選自金(Au)、鋁(Al)、銀(Ag)或其等之合金。較佳地,金屬層260a、260b、260c、262a、262b、與262c係藉由一印刷技術或是電鍍而共同形成。經由上述步驟,即完成具有發光元件20a、20b、與20c之發光元件陣列20。Referring to FIG. 2D, metal layers 260a, 260b, 260c are formed; and metal layers 262a, 262b, 262c are formed. The material of the metal layers 260a, 260b, 260c, 262a, 262b, and 262c can be selected from gold (Au), aluminum (Al), silver (Ag) or alloys thereof. Preferably, the metal layers 260a, 260b, 260c, 262a, 262b, and 262c are jointly formed by a printing technique or electroplating. Through the above steps, the light emitting element array 20 having the
如第2E圖至第2F圖所示,在一實施例中,發光元件20a、20b、與20c提供足夠大的接觸面積,以利用錫料(solder)22直接與電路載板23連接。再使基材21與發光元件陣列20分離,發光元件陣列20便可作為影像顯示之用。例如,利用錫料22直接連接發光元件20a、20b、與20c與電路載板23之後,發光元件的製作方法更包含一移除基材21之步驟。基材11可以例如是一藍寶石基材,且可藉由準分子雷射(excimer laser)移除。準分子雷射可以為一具有能量為400毫焦耳/平方公分(mJ/cm
2)、波長為248奈米以及脈衝寬度(pulse width)為38奈秒(ns)的氟化氪(KrF)準分子雷射。在較高的溫度中,例如60℃,當準分子雷射照射在藍寶石基材上時,藍寶石基材便被移除以暴露出第一導電層102。另外,當基材11為砷化鎵基材,一比例為1:35之氨水(NH
4OH)與過氧化氫(H
2O
2)的溶液或是一比例為5:3:5之磷酸(H
3PO
4)、過氧化氫(H
2O
2)與水的溶液可用於移除砷化鎵基材,藉以暴露出第一導電層102。
As shown in FIG. 2E to FIG. 2F , in one embodiment, the
移除基材21之後,發光裝置的製作方法更包含粗化第一導電層102的表面102a。例如,當第一導電層102為一氮化鋁鎵銦(Al
xGa
yln
(1 - x - y )N)層,其表面102a可以藉由蝕刻液粗化,蝕刻液可例如為氫氧化鉀(KOH)溶液。此外,當第一導電層102為一磷化鋁鎵銦(Al
xGa
yIn
1-x-yP)層,一鹽酸(HCl)以及磷酸的溶液可用於粗化第一導電層102的表面102a,粗化時間可例如為15秒。第一導電層102的粗化表面102a可降低發生全反射的可能性,藉以增加發光元件的光取出效率。一實施例中,如第2G圖所示,一透明封裝材料24係用於包覆包含發光元件20a、20b、與20c之發光元件陣列20且連接電路載板23,進而形成發光元件封裝25,其中透明封裝材料24可例如為環氧樹脂或是其他習知技藝者所熟知之適合的材料。
After removing the
參照第3A圖至第3G圖,係為依照本發明實施例之一種發光裝置的製作方法流程各階段所對應之剖面圖。參見第3A圖,提供一基材21,其為單晶且包含藍寶石、砷化鎵、氮化鎵或矽;磊晶成長一第一導電層102於基材21上,第一導電層102係做為一包覆層;磊晶成長一包含多重量子井(Multiple Quantum Well, MQW)結構的活性層104於第一導電層102上,其中活性層104係作為一發光層;以及磊晶成長一第二導電層106於活性層104上,其中第二導電層106係做為另一包覆層。接著,蝕刻第一導電層102、活性層104以及第二導電層106以在基材21上形成複數藉由溝槽(圖未標)而彼此分離的發光疊層101,且每一發光疊層101中,一部分的第一導電層102是暴露的。接著,每一發光疊層101上形成有一保護層120,且保護層120覆蓋部分的第一導電層102、部分的第二導電層106以及發光疊層101的一側壁。接著,於每一第一導電層102的暴露的部位上設置一與第一導電層102電性連接的電極或接合墊107a,以及於每一第二導電層106上設置一與第二導電層106電性連接的電極或接合墊107b。
之後,參見第3B圖,於每一保護層120上設置一反射層221,以及於每一保護層120上形成一覆蓋反射層221之第一介電層122。對於發光疊層101發出的光,反射層221具有一等同於或是大於80%的反射率。反射層221之材料包含金屬,例如銀、銀合金、鋁或鋁合金。在一實施例中,反射層221的材料包含混有無機粒子的高分子,其中無機粒子由金屬氧化物組成或是由具有反射率等於或是大於1.8之材料組成,反射層221的材料例如為混有氧化鈦粒子的環氧樹脂。各反射層221係完全地被各自對應的保護層120以及第一介電層122覆蓋,藉以電絕緣各反射層221與各自對應的發光疊層101。於另一實施例中,保護層120是被省略的,且反射層221是直接形成於第二導電層106上且電性連接第二導電層106。之後,如第3C圖所示,於基材21上以及溝槽之間以及於每一發光疊層101上形成一第二介電層240,且各第二介電層240暴露各自對應的電極或接合墊107a以及電極或接合墊107b。之後,於每一第二介電層240之間以及於部分的對應之第一介電層122上形成一第一金屬層260以及一第二金屬層262。第一金屬層260以及第二金屬層262係分別形成於對應的電極或接合墊107a以及電極或接合墊107b上。第一金屬層260以及第二金屬層262之材料包含金、鋁、銀或其等之合金。於一實施例中,第一金屬層260以及第二金屬層262係藉由一印刷技術或是電鍍而共同形成。After that, referring to FIG. 3B , a
如第3D圖所示,圖案化位於相鄰發光疊層101之間的第二介電層240藉以於第二介電層240裡形成凹槽,凹槽暴露一部分的基材21且將第二介電層240隔開以形成介電層240a,之後形成一不透光層290於凹槽中。於一實施例中,不透光層290作為一反射層或是一光吸收層,藉以反射或是吸收對應的發光疊層101發出的光且避免被鄰近的發光疊層101發出的光互相影響或產生串擾(crosstalk)。對於對應的發光疊層101發出的光,不透光層290具有一小於50%的穿透率(transmittance)。不透光層290的材料包含金屬或是包含混有無機粒子的高分子,其中無機粒子由金屬氧化物組成或是由具有反射率等於或是大於1.8之材料組成,反射層221的材料例如為混有氧化鈦粒子的環氧樹脂。至此,包含複數發光元件300的發光元件陣列30製作完成。如第3E圖所示,提供一電路載板23,其包含有複數位於電路載板23之上表面以及下表面的金屬接觸22以及包含有複數貫穿電路載板23的導電通道22a,其中導電通道22a可連接位於電路載板之上表面上的金屬接觸22以及位於電路載板之下表面上的金屬接觸22。於一實施例中,電路載板23包含錫料(solder)。電路載板23包含FR-4、BT (Bismaleimide-Triazine)樹脂、陶瓷或玻璃。電路載板23之厚度介於50至200微米之間以足夠支撐發光元件且依舊具有小體積。發光元件陣列30藉由對準各發光元件300的第一金屬層260與第二金屬層262至對應的金屬接觸22而直接以覆晶的形式與電路載板23連接。值得注意的是,發光元件陣列30與電路載板23之間金屬接觸22以外的區域可能形成有空隙。另外可選擇性地以填充材料填充於空隙裡以增進連結強度以及機械支撐。連接發光元件陣列30與電路載板23之後,移除發光元件陣列30的基材21。於一實施例中,基材包含藍寶石,發光疊層101包含氮化鎵,且移除基材21的方法包含於較高的溫度中,例如60℃,使用一準分子雷射照射在第一導電層102與基材21的介面,接著分離基材21與第一導電層102。準分子雷射可以為一具有能量為400毫焦耳/平方公分(mJ/cm
2)、波長為248奈米以及脈衝寬度(pulse width)為38奈秒(ns)的氟化氪(KrF)準分子雷射。於另一實施例中,當基材21為砷化鎵基材,移除基材21的方法包含使用一比例為1:35之氨水(NH
4OH)與過氧化氫(H
2O
2)的混和物或是一比例為5:3:5之磷酸(H
3PO
4)、過氧化氫(H
2O
2)與水的混和物藉以蝕刻至可以完全地移除基材21且暴露各發光元件300的第一導電層102、介電層240a以及不透光層290。
As shown in FIG. 3D, the second dielectric layer 240 located between adjacent
如第3F圖所示,移除基材21之後,發光裝置的製作方法更包括粗化第一導電層102之曓露的表面。於一實施例中,第一導電層102包含氮化鋁鎵銦(Al
xGa
yln
(1 - x - y)N,其中0≦x, y≦0),可使用氫氧化鉀(KOH)溶液蝕刻第一導電層102曓露的表面以形成一粗化表面102a。於另一實施例中,第一導電層102包含磷化鋁鎵銦(Al
xGa
yIn
(1 - x - y)P),可使用鹽酸(HCl)或是磷酸的溶液蝕刻第一導電層102曓露的表面以形成一粗化表面102a,粗化時間可例如為15秒。每一第一導電層102的粗化表面102a可降低各發光元件300內的光發生全反射的可能性,藉以增加發光元件的光取出效率。於粗化步驟之後,複數凹陷區域位於粗化表面102a且實質上被介電層240a環繞。於一實施例中,為了形成一用於顯示器的晶粒級的紅綠藍發光元件單元,本實施例之製作方法可選擇性地於發光元件300b上塗佈一第一波長轉換層294以轉換光,如第3F圖所示。例如,發光元件300b之發光疊層101,其發出之主要波長介於430奈米至470奈米之間的藍光,被轉換為第一轉換光,例如為一具有主要波長介於610奈米至690奈米之間的紅光。進一步的,一第二波長轉換層296可選擇性地塗佈在發光元件300c上藉以將發光元件300c所發出的光轉換為一第二轉換光,例如為一具有主要波長介於500奈米至570奈米之間的綠光。發光元件300a並未塗佈任何波長轉換材料,以直接自發光元件300a之粗化表面102a發出藍光。於一實施例中,第一或第二波長轉換層藉由聚集奈米級的量子點(quantum dot)或是奈米級的螢光粉以形成一具有厚度實質一致的膜,且藉由一黏結層(圖未示)連結至發光疊層101。於另一實施例中,第一或第二波長轉換層包含具有奈米級的量子點或是奈米級的螢光粉,其平均直徑或平均特徵長度介於10奈米至500奈米之間。每個奈米級的量子點或奈米級的螢光粉之長度或是特徵長度實質上小於1000奈米。奈米級的量子點包含半導體材料,例如一具有組成為Zn
xCd
yMg
l-x-ySe的II-ⅤI(二/六)族化合物半導體,其中x以及y可調變為使II-ⅤI(二/六)族化合物半導體光激發後發出綠或紅光。「特徵長度」定義為一螢光粉或是一量子點之任兩端點之間的最大距離。之後,將例如為環氧樹脂或是矽氧樹脂(silicone)的透明封裝材料24塗佈於發光元件陣列32之上表面以將波長轉換材料固定於發光疊層101,且作為發光元件陣列32之發光元件300a、300b、300c的光學透鏡。於另一實施例中,覆蓋發光元件300a、300b、300c的波長轉換層之材料是相同的。
As shown in FIG. 3F , after removing the
第4A圖為如第3F圖所示之發光元件陣列32以覆晶的形式與電路載板23連接的俯視圖。發光元件陣列32以及電路載板23兩者為具有相同或類似尺寸的晶圓形式。發光元件陣列32包含於二維空間中交錯且連續設置的複數紅綠藍發光元件群組,且如圖中虛線圈起的部位所示,每一群組包含一個發光元件300a、一個發光元件300b以及一個發光元件300c。FIG. 4A is a top view of the light-emitting element array 32 connected to the
最後,執行一切割(dicing)步驟同時切割發光元件陣列32以及電路載板23,形成如第3G圖所示之複數晶粒級的紅綠藍發光元件單元35,各晶粒級的紅綠藍發光元件單元35包含一發出藍光的藍色發光元件300a、一發出紅光的紅色發光元件300b以及一發出綠光的綠色發光元件300c。晶粒級的紅綠藍發光元件單元35是一種不含封裝且為一種表面黏著型的裝置,亦即,於切割步驟之後,不需要傳統的封裝步驟即可直接與一印刷電路載板黏接。透明封裝材料24係共同地覆蓋發光元件300a、300b以及300且不延伸至發光元件300a、300b以及300c之側壁。於一實施例中,切割(dicing)步驟同時切割發光元件陣列32以及電路載板23以形成複數晶粒級的紅綠藍發光元件單元,其中各晶粒級的紅綠藍發光元件單元包含複數紅綠藍發光元件群組。複數紅綠藍發光元件群組於一個紅綠藍發光元件單元中係以I*J陣列排列,其中I以及J是正整數,且I與J中至少一是大於1。I與J之比例較佳地是接近或是等於1/1、3/2、4/3或16/9。Finally, a dicing step is performed to simultaneously cut the light-emitting element array 32 and the
參照第4B圖,係為晶粒級的紅綠藍發光元件單元35包含如第3G圖所示之紅綠藍發光元件群組。晶粒級的紅綠藍發光元件單元35是為具有一第一長邊以及一第一短邊的第一矩形,其中第一短邊具有一第一寬度S1且第一長邊具有一大於第一寬度S1的第一長度S2。每一發光疊層101為具有一第二長邊以及一第二短邊的第二矩形,其中第二短邊具有一第二寬度d1且第二長邊具有一大於第二寬度d1的第二長度d2。發光疊層101的第二短邊實質上設置於平行於晶粒級的紅綠藍發光元件單元35的第一長邊或實質上設置於垂直於晶粒級的紅綠藍發光元件單元35的第一短邊。於一實施例中,紅綠藍發光元件單元35可作為室內顯示平板的一個像素。為了使具有對角線為40吋且像素解析度為1024*768的電視顯示全部使用發光元件像素,每一像素的面積需小於約0.64平方毫米(mm
2)。因此,紅綠藍發光元件單元35的面積可例如為小於0.36 mm
2。第一長度S2以及第一寬度S1皆小於0.6毫米,且紅綠藍發光元件單元35的長寬比,亦即S2/S1,較佳地係小於2/1。根據本發明所揭露之實施例,第一金屬層260以及第二金屬層262之間的距離,亦即第一距離S3,受限於發光元件陣列以及電路載板於連接步驟中的對位控制。第一距離S3等於或是大於25微米(micron)且小於150微米,藉以確保製程容差且提供足夠做為導電用的接觸面積。紅綠藍發光元件單元35之其中一邊緣與紅綠藍發光元件單元35的其中一發光疊層101之間的距離,亦即第二距離S4,受限於切割步驟的容差。第二距離S4等於或是大於25微米且小於60微米,藉以確保切割步驟的容差以及維持小體積的優點。兩個相鄰發光元件之間的距離,亦即第三距離S5受限於微影蝕刻步驟,且小於50微米,或較佳地小於25微米,藉以於發光疊層101之間保留較多的面積。對於紅綠藍發光元件單元35中每一發光疊層101而言,第二寬度d1介於20至150微米之間且第二長度d2介於20至550微米之間。紅綠藍發光元件單元35的面積與發光疊層101的總面積之比例小於2或介於1.1至2之間,且較佳地係介於1.2至1.8之間。發光疊層101的面積取決於所需的亮度以及像素尺寸。值得注意的是,紅綠藍發光元件單元35的形狀亦可為四邊皆與第一寬度S1相同的正方形。於一實施例中,一像素包含兩個紅綠藍發光元件單元35,其中一個用於正常操作,另一個用於備用以防正常操作的紅綠藍發光元件單元35故障。第一寬度S1較佳地係小於0.3毫米,藉以使兩個紅綠藍發光元件單元35設置於一個像素內。本發明的優點在於,可以實現發光元件作為一平面電視的像素元件,且解析度更可以提升至像素解析度為1024*768的兩倍或是四倍。於另一實施例中,一紅綠藍發光元件單元35包含兩個紅綠藍發光元件群組,其中一個用於正常操作,另一個用於備用以防正常操作的紅綠藍發光元件群組故障。
Referring to FIG. 4B, the grain-level red, green, and blue light-emitting element unit 35 includes the red, green, and blue light-emitting element group as shown in FIG. 3G. The grain-level red, green and blue light-emitting element unit 35 is a first rectangle with a first long side and a first short side, wherein the first short side has a first width S1 and the first long side has a first length S2 greater than the first width S1. Each
參照第5A圖至第5C圖,係為依照本發明實施例之一種晶粒級的發光元件單元,其製造方法以及結構與第3A圖至第3G圖所示之實施例以及相關之揭示內容相似,不同的地方在於,於切割步驟之前,發光元件陣列34包含複數相同的發光元件300d,如第5A圖所示。每一發光元件300d係塗佈相同或不同的波長轉換層298,波長轉換層298用於轉換對應的發光元件300d之發光疊層101發出的光,例如,將主要波長介於430奈米至470奈米之間的藍光轉換為黃光、綠光或是從光的轉換光。參照第5B圖以及第5C圖,係為切割步驟後,包含單一發光元件的晶粒級的發光元件單元36之俯視圖以及剖面圖。晶粒級的發光元件單元36的尺寸與第4B圖所示之晶粒級的紅綠藍發光元件單元35的尺寸相似或相同。晶粒級的發光元件單元36為具有一第一長邊以及一第一短邊的第一矩形,其中第一長邊具有第一長度S1,且第一短邊具有小於第一長度S1的第一寬度S6。每一發光疊層101為具有一第二長邊以及一第二短邊的第二矩形,其中第二短邊具有一第二寬度d1且第二長邊具有一大於第二寬度d1的第二長度d2。發光疊層101的第二短邊實質上設置於平行於晶粒級的紅綠藍發光元件單元36的第一短邊或實質上設置於垂直於晶粒級的紅綠藍發光元件單元36的第一長邊。於一實施例中,紅綠藍發光元件單元36是用於一室內顯示平板的的像素之其中一部分。紅綠藍發光元件單元36的面積可例如為小於0.12mm
2。第一長度S1以及第一寬度S6皆小於0.2毫米,且紅綠藍發光元件單元36的長寬比,亦即S1/S6,較佳地係小於2/1。根據本發明,第一金屬層260以及第二金屬層262之間的距離,亦即第一距離S3,受限於發光元件陣列以及電路載板於連接步驟中的對位控制。第一距離S3等於或是大於25微米且小於150微米,以確保製程容差且提供足夠做為導電用的接觸面積。紅綠藍發光元件單元36之其中一邊緣與其發光疊層101之間的距離,亦即第二距離S4,受限於切割步驟的容差。第二距離S4等於或是大於25微米且小於60微米,藉以確保切割步驟的容差以及維持小體積的優點。對於晶粒級的紅綠藍發光元件單元36中的發光疊層101而言,第二寬度d1介於20至150微米之間且第二長度d2於20至550微米之間。晶粒級的紅綠藍發光元件單元36的面積與發光疊層101的總面積比例小於2或介於1.1至2之間,且較佳地係介於1.2至1.8之間。發光疊層101的面積取決於所需的亮度以及像素尺寸。值得注意的是,紅綠藍發光元件單元36的形狀亦可為四邊皆與第一寬度S6相同的正方形。相似的,發光疊層101的形狀亦可為四邊皆與第二寬度d1相同的正方形。於一實施例中,一像素包含至少三個晶粒級的紅綠藍發光元件單元36,藉以發出藍、紅以及綠光。
Referring to FIG. 5A to FIG. 5C, it is a grain-level light-emitting element unit according to an embodiment of the present invention. Its manufacturing method and structure are similar to the embodiments shown in FIGS. 3A to 3G and related disclosures. The difference is that before the cutting step, the light-emitting
參照第5D圖至第5E圖,係為依照本發明實施例之一種晶粒級的發光元件單元,其製造方法以及結構與第5A圖至第5C圖所示之實施例以及相關之揭示內容相似,不同的地方在於,不透光層290可選擇性地省略。紅綠藍發光元件單元36’是直接表面黏著於一包含於一燈具的光板。發光疊層101之面積取決於所需的亮度以及光板或燈具的尺寸。對於例如小於0.3瓦之低功率的應用而言,紅綠藍發光元件單元36’的發光疊層101之面積係為100mil
2至200mil
2,對於例如介於0.3至0.9瓦之間的中功率之應用而言,紅綠藍發光元件單元36’的發光疊層101之面積係為201 mil
2至900 mil
2,對於例如高於0.9瓦的高功率之應用而言,紅綠藍發光元件單元36’的發光疊層101之面積係大於900 mil
2。環繞發光疊層101的介電層240a可作為將光取出晶粒級的發光元件單元36’的耦合透鏡(coupling lens)。晶粒級的發光元件單元36’的面積與發光疊層101的面積之比例等於或大於9,且較佳地係等於或大於15,藉以具有較佳的光取出效率以及光分散性。於本發明中,第一金屬層260以及第二金屬層262之間的距離,亦即第一距離S3’,受限於發光元件陣列以及電路載板於連接步驟中的對位控制。第一距離S3’等於或是大於25微米且小於150微米,藉以確保製程容差且提供足夠做為導電用的接觸面積。值得注意的是,晶粒級的發光元件單元36’的形狀亦可為四邊皆與第一寬度S6’相同的正方形。同樣的,發光疊層101的形狀亦可為四邊皆與第二寬度d1’相同的正方形。第一寬度S6’與第二寬度d1’相同或是大於第二寬度d1’的三倍,較佳地,第一寬度S6’與第二寬度d1’相同或是大於第二寬度d1’的四倍,以使晶粒級的發光元件單元36’具有較佳的光取出效率。於一實例中,介電層於發光疊層101的側壁具有不相同的厚度,因此第一寬度S6’與第二寬度d1’的第一比例(S6’/ d1’)不同於第一長度S1’與第二長度d2’的第二比例(S1’/ d2’),以達到於操作時,俯視晶粒級的發光元件單元36’,其具有不對稱的光場的特性。此外,第一比例至少為第二比例的兩倍,或較佳地係為第二比例的四倍。
Referring to FIG. 5D to FIG. 5E , it is a grain-level light-emitting element unit according to an embodiment of the present invention. Its manufacturing method and structure are similar to the embodiment shown in FIG. 5A to FIG. 5C and related disclosures. The difference is that the
參照第6A圖,係為依照本發明實施例之一晶粒級的紅綠藍發光元件單元65的剖面圖,其製造方法以及結構與第3A圖至第3G圖所示之實施例以及相關之揭示內容相似,不同的地方在於,一填充材料680係填充於包含發光元件300a’、300b’以及300c’的發光元件陣列32’以及電路載板23之間的空隙,藉以提高兩者的連接強度以及提供電路載板以及發光元件之間的電流路徑。填充材料680包含異方導電膠(anisotropic conductive film,ACF),其具有在發光元件陣列32’與電路載板23之間以垂直路徑傳導電流以及在發光元件陣列32’ 與電路載板23之間以平行於發光元件陣列32’或電路載板的橫向路徑絕緣電流的能力。填充材料680係於連接發光元件陣列至電路載板23之前塗佈於電路載板23上。於一實施例中,第一金屬層260’以及第二金屬層262’皆未接觸電路載板23的金屬接觸22。填充材料680係位於第一金屬層260’、第二金屬層262’ 與金屬接觸22之間,藉以在第一金屬層260’、第二金屬層262’ 以及金屬接觸22之間傳導電流。第一金屬層260’以及第二金屬層262’係經圖案化,因此在面對金屬接觸22的表面為一具有複數凹部以及凸部的粗化表面。故,發光元件陣列與電路載板的接觸面積增加,發光元件陣列與電路載板的連接強度亦提升。複數凹部以及凸部具有規則形狀或是不規則形狀,且表面粗糙度(Ra)係介於0.5至5微米之間。使用異方導電膠作為填充材料的的優點在於第一金屬層260’與第二金屬層262’之間的距離,即如第4B圖所示之第一距離S3,可小於25微米。Referring to FIG. 6A, it is a cross-sectional view of a grain-level red, green, and blue light-emitting element unit 65 according to an embodiment of the present invention. Its manufacturing method and structure are similar to the embodiments shown in FIGS. 3A to 3G and related disclosures. The difference is that a filling material 680 is filled in the space between the light-emitting element array 32' including the light-emitting
第6B圖係為第6A圖所示之發光元件陣列32’中的單顆發光元件300d’ 之示意圖。填充材料680以及第一金屬層260’與第二金屬層262’之圖案化的表面亦可以應用於如第5A圖至第5C圖所示之實施例,藉以形成如第6B圖所示之結構。填充材料680係填充於發光元件300d’以及電路載板23之間的空隙,以提高兩者的連接強度以及提供電路載板與發光元件之間的電流路徑。填充材料680包含異方導電膠(anisotropic conductive film,ACF),其具有在發光元件300d’與電路載板23之間以垂直路徑傳導電流以及在發光元件300d’與電路載板23之間以平行於發光元件300d’或電路載板的橫向路徑絕緣電流的能力。填充材料680係於連接發光元件陣列至電路載板23之前塗佈於電路載板23上。於一實施例中,第一金屬層260’以及第二金屬層262’皆未接觸電路載板23的金屬接觸22。填充材料680係位於第一金屬層260’、第二金屬層262’ 與金屬接觸22之間,藉以在第一金屬層260’ 、第二金屬層262’以及金屬接觸22之間傳導電流。第一金屬層260’以及第二金屬層262’係經圖案化,因此在面對金屬接觸22的表面上有複數凹部以及凸部。故,發光元件與電路載板的接觸面積增加,發光元件與電路載板的連接強度亦提升。複數凹部以及凸部具有規則形狀或是不規則形狀,且表面粗糙度(Ra)係介於0.5至5微米之間。同樣地,填充材料680以及第一金屬層260’與第二金屬層262’之圖案化的表面亦可以應用於上述如第5E圖所示之實施例,以形成如第6C圖所示之結構。FIG. 6B is a schematic diagram of a single light-emitting
參照第7A圖至第7G圖,係為依照本發明實施例之一種發光裝置的製作方法流程各階段所對應之剖面圖,其中第7A圖至第7D圖之步驟以及結構與第2A圖至第2D圖所示之實施例以及相關之揭示內容相似,第7F圖至第7G圖之步驟以及結構與第3E圖至第3F圖所示之實施例以及相關之揭示內容相似,不同的地方在於,如第7C圖所示,介電層240a、240b、240c、280係為一光阻劑,例如為正光阻劑或是負光阻劑;如第7D圖至第7E圖所示,於形成金屬層260a、260b、260c以及形成金屬層262a、262b、262c之後,所述的製作方法更包含移除介電層240a、240b、240c、280,因此形成空隙於兩相鄰的發光元件之間以及單一發光元件之金屬層之間;如第7F圖至第7G圖所示,移除基材21之後,兩相鄰的發光元件藉由空隙以彼此分離,且所述的製作方法更包括粗化第一導電層102曓露的表面以形成一粗化表面102a,粗化的方法如前所述,在此便不再贅述。於一實施例中,為了形成一用於顯示或照明的晶粒級(chip-scale)的紅綠藍發光元件,其製作方法可選擇性地於發光元件300b上塗佈一第一波長轉換層294,如第7G圖所示,以將發光元件300b所發出的光轉換為一第一轉換光。進一步的,一第二波長轉換層296可選擇性地塗佈在發光元件300c上藉以將發光元件300c所發出的光轉換為一第二轉換光。發光元件300a並未塗佈任何波長轉換材料,以直接自發光元件300a之粗化表面102a發出藍光。各轉換層的形成方式以及材料如前所述,在此不再贅述。第7H圖係為依照本發明實施例之晶粒級的紅綠藍發光元件單元包含如第7G圖所示之紅綠藍發光元件群組之俯視圖,紅綠藍發光元件單元37之第一寬度S1、第一長度S2、第二長度d2、第一距離S3、第二距離S4、第二寬度d1、第三距離S5如第4B圖所示之實施例以及相關之揭示內容所述,在此不再贅述,不同的地方在於,發光疊層101並未被介電層240a以及不透光層290環繞。於形成第一波長轉換層294以及第二波長轉換層296之後,不需塗佈前述實施例之透明封裝材料24,直接執行切割(dicing)步驟以直接切割電路載板23而不需經由切割發光元件陣列32,形成複數晶粒級的紅綠藍發光元件單元。參照第7I圖以及第7J圖,係為切割步驟後,包含單一發光元件的晶粒級的發光元件單元37之剖面圖以及俯視圖。晶粒級的發光元件單元37之第一長度S1、第一寬度S6、第二寬度d1、第二長度d2、第一距離S3以及第二距離S4如圖5B所示之實施例以及相關之揭示內容所述,在此不再贅述,不同的地方在於,發光疊層101、第一金屬層260以及第二金屬層262之的側壁並未有介電層240a以及不透光層290;此外,波長轉換層298上並未有透明封裝材料24。Referring to FIG. 7A to FIG. 7G, it is a cross-sectional view corresponding to each stage of the process flow of a light-emitting device according to an embodiment of the present invention. The steps and structure in FIG. 7A to FIG. 7D are similar to the embodiment shown in FIG. 2A to FIG. 0a, 240b, 240c, 280 is a photoresist, such as a positive photoresist or a negative photoresist; as shown in FIG. 7D to FIG. 7E, after forming the metal layers 260a, 260b, 260c and forming the metal layers 262a, 262b, 262c, the manufacturing method further includes removing the
參照第8A圖,係為依照本發明實施例之一種顯示模組76,其包含複數位於第二電路載板73上的晶粒級的紅綠藍發光元件單元65。例如,任兩個相鄰的晶粒級的紅綠藍發光元件單元65是由一間距彼此分離或是無縫地設置而使兩者互相接觸。第二電路載板73包含電路72,電路72是與紅綠藍發光元件單元65之各發光元件電性連接,藉以獨立控制每一紅綠藍發光元件單元65中的藍、紅以及綠色發光元件。於一實施例中,顯示模組76包含M列以及N行的晶粒級的紅綠藍發光元件單元65以用於一具有X*Y像素解析度的顯示器,其中M/N = 1/1、3/2、4/3或16/9,X=a*M,Y=b*N,且a以及b皆為等於或大於2的正整數。顯示模組76於一平方英吋之面積中,包含超過500個的紅綠藍發光元件單元65。也就是說,顯示模組76於一平方英吋之面積中,包含超過1500個發光疊層101。於另一實施例中,每一晶粒級的紅綠藍發光元件單元包含複數紅綠藍發光元件群組,且每一群組如之前所述,包含一藍色發光元件、一紅色發光元件以及一綠色發光元件。複數紅綠藍發光元件群組於一個晶粒級的紅綠藍發光元件單元中係以I*J陣列排列,其中I以及J是正整數,且I與J中至少一是大於1。I與J之比例較佳地是接近或是等於1/1、3/2、4/3或16/9。於一晶粒級的紅綠藍發光元件單元中,分別來自於兩相鄰的紅綠藍發光元件群組的兩相鄰的發光疊層之間的距離,實質上等於分別來自於兩相鄰的晶粒級的紅綠藍發光元件單元之兩相鄰的發光疊層之間的距離。顯示模組76包含M列以及N行的晶粒級的紅綠藍發光元件單元65以用於一具有X*Y像素解析度的顯示器,其中M /N = 1/1、3/2、4/3或16/9,X=a*M*I,Y=b*N*J,且a以及b皆為等於或大於2的正整數。顯示模組76於一平方英吋之面積中,包含超過500個的紅綠藍發光元件群組。也就是說,顯示模組76於一平方英吋之面積中,包含超過1500個發光疊層101。每一紅綠藍發光元件單元以及紅綠藍發光元件單元中的每一發光元件皆可藉由電路載板23以及第二電路載板73上形成的電路獨立驅動。第二電路載板73的材料班還FR-4、BT (Bismaleimide-Triazine) 樹脂、陶瓷或是玻璃。第8B圖係為依照本發明實施例之一種照明模組78的示意圖。照明模組78包括複數位於第二電路載板73上的晶粒級的發光元件單元66。依據施加的驅動電壓,晶粒級的發光元件單元66可藉由第二電路載板73上的電路以串聯或是並聯方式連接。於一實施例中,照明模組78係被設置於一如第9所示之燈泡80內。燈泡80進一步包含一覆蓋照明模組78的光學透鏡82,一具有一連接表面且照明模組78是位於連接表面的散熱槽85,一與散熱槽85連接的連結部87,以及一與連結部87連接且與照明模組78電性連接的電連接器88。Referring to FIG. 8A , it is a display module 76 according to an embodiment of the present invention, which includes a plurality of red, green and blue light-emitting element units 65 at the grain level on the second circuit substrate 73 . For example, any two adjacent grain-level red, green and blue light-emitting element units 65 are separated from each other by a distance or arranged seamlessly so that they are in contact with each other. The second circuit carrier 73 includes a circuit 72 electrically connected to each light-emitting element of the red, green, and blue light-emitting element unit 65 to independently control the blue, red, and green light-emitting elements in each red, green, and blue light-emitting element unit 65 . In one embodiment, the display module 76 includes M columns and N rows of grain-level red, green, and blue light-emitting element units 65 for a display with X*Y pixel resolution, wherein M/N=1/1, 3/2, 4/3 or 16/9, X=a*M, Y=b*N, and a and b are positive integers equal to or greater than 2. The display module 76 includes more than 500 red, green and blue light-emitting element units 65 in an area of one square inch. That is to say, the display module 76 includes more than 1500
以上所述之實施例僅係為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。The above-mentioned embodiments are only to illustrate the technical ideas and characteristics of the present invention, and its purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly. It should not be used to limit the patent scope of the present invention, that is, all equal changes or modifications made according to the spirit disclosed in the present invention should still be covered within the patent scope of the present invention.
100、200a、200b、與200c:發光結構100, 200a, 200b, and 200c: light emitting structures
11、21:基材11, 21: Substrate
102:第一導電層102: the first conductive layer
104:活性層104: active layer
106:第二導電層106: the second conductive layer
107a、107b:電極或接合墊107a, 107b: electrodes or bonding pads
120:保護層120: protective layer
122:第一介電層122: the first dielectric layer
140、240:第二介電層140, 240: the second dielectric layer
222a、222b、222c、240a、240b、240c、280:介電層 222a, 222b, 222c, 240a, 240b, 240c, 280: dielectric layer
160、260a、260b、260c、162、262a、262b、262c:金屬層160, 260a, 260b, 260c, 162, 262a, 262b, 262c: metal layer
20、30、32、32’:發光元件陣列20, 30, 32, 32': array of light emitting elements
21:基材21: Substrate
22:錫料22: Tin material
13、23:電路載板13, 23: circuit board
24:透明封裝材料24: Transparent packaging material
25:發光元件封裝25: Light-emitting component packaging
10、10a、10b、10c、20a、20b、20c、300、300a、300b、300c、300d、300a’、300b’、300c’ 、300d’:發光元件10, 10a, 10b, 10c, 20a, 20b, 20c, 300, 300a, 300b, 300c, 300d, 300a', 300b', 300c', 300d': light emitting elements
102a:表面102a: Surface
101:發光疊層101: Luminous Lamination
221:反射層221: reflective layer
260、260’:第一金屬層260, 260': the first metal layer
262、262’:第二金屬層262, 262': the second metal layer
290:不透光層290: Opaque layer
22:金屬接觸22: Metal contact
22a:導電通道22a: conductive channel
294:第一波長轉換層294: the first wavelength conversion layer
296:第二波長轉換層296: second wavelength conversion layer
35、36、36’、65、66、37:紅綠藍發光元件單元35, 36, 36', 65, 66, 37: red, green and blue light-emitting element units
S1、S6’:第一寬度S1, S6': the first width
S2:第一長度S2: first length
d1、d1’:第二寬度d1, d1': the second width
d2:第二長度d2: second length
S3、S3’:第一距離S3, S3': the first distance
S4:第二距離S4: second distance
S5:第三距離S5: The third distance
298:波長轉換層298:Wavelength conversion layer
S1:第一長度S1: first length
S6:第一寬度;680:填充材料;76:顯示模組;73:第二電路載板;72:電路;78:照明模組;80:燈泡;82:光學透鏡;85:散熱槽;87:連結部;88:電連接器S6: first width; 680: filling material; 76: display module; 73: second circuit carrier; 72: circuit; 78: lighting module; 80: light bulb; 82: optical lens; 85: cooling groove; 87: connection part; 88: electrical connector
第1A圖至第1E圖係為依照本發明實施例之發光元件製作方法的示意圖;FIG. 1A to FIG. 1E are schematic diagrams of a manufacturing method of a light-emitting device according to an embodiment of the present invention;
第1F圖係為本發明實施例之發光元件之應用示意圖;Figure 1F is a schematic diagram of the application of the light-emitting element of the embodiment of the present invention;
第2A圖至第2D圖係為依照本發明實施例之發光元件陣列製作方法的示意圖;Figures 2A to 2D are schematic diagrams of the fabrication method of the light-emitting element array according to the embodiment of the present invention;
第2E圖係為依照本發明實施例之發光元件陣列與電路板連結之示意圖;Figure 2E is a schematic diagram of the connection between the light-emitting element array and the circuit board according to the embodiment of the present invention;
第2F圖係為依照本發明實施例之具有粗化表面之第一導電層的發光元件陣列之示意圖;FIG. 2F is a schematic diagram of a light-emitting element array having a first conductive layer with a roughened surface according to an embodiment of the present invention;
第2G圖係為依照本發明實施例之發光元件陣列之封裝示意圖;Figure 2G is a schematic diagram of packaging of a light-emitting element array according to an embodiment of the present invention;
第3A圖至第3G圖係為依照本發明實施例之發光裝置的製作方法流程各階段所對應之剖面圖;Figures 3A to 3G are cross-sectional views corresponding to each stage of the manufacturing method of the light-emitting device according to the embodiment of the present invention;
第4A圖係為如第3F圖所示之發光元件陣列以覆晶的形式與電路載板連接的俯視圖;Figure 4A is a top view of the light-emitting element array as shown in Figure 3F connected to the circuit carrier in the form of a flip chip;
第4B圖係為依照本發明實施例之晶粒級的紅綠藍發光元件單元包含如第3G圖所示之紅綠藍發光元件群組之俯視圖;FIG. 4B is a top view of a grain-level red, green, and blue light-emitting element unit including the red, green, and blue light-emitting element group shown in FIG. 3G according to an embodiment of the present invention;
第5A圖係為依照本發明實施例之發光元件陣列以覆晶的形式與電路載板連接的俯視圖;FIG. 5A is a top view of a light-emitting element array connected to a circuit carrier in the form of a flip chip according to an embodiment of the present invention;
第5B圖係為依照本發明實施例之單一發光元件的晶粒級的發光元件單元之俯視圖;FIG. 5B is a top view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention;
第5C圖係為依照本發明實施例之單一發光元件的晶粒級的發光元件單元之剖面圖;FIG. 5C is a cross-sectional view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention;
第5D圖係為依照本發明實施例之單一發光元件的晶粒級的發光元件單元之俯視圖;FIG. 5D is a top view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention;
第5E圖係為依照本發明實施例之單一發光元件的晶粒級的發光元件單元之剖面圖;FIG. 5E is a cross-sectional view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention;
第6A圖係為依照本發明實施例之晶粒級的紅綠藍發光元件單元的剖面圖Figure 6A is a cross-sectional view of a grain-level red, green and blue light-emitting element unit according to an embodiment of the present invention
第6B圖係為第6A圖所示之發光元件陣列中的單顆發光元件之示意圖;Figure 6B is a schematic diagram of a single light-emitting element in the light-emitting element array shown in Figure 6A;
第6C圖係為依照本發明實施例之發光元件陣列中的單顆發光元件之示意圖;FIG. 6C is a schematic diagram of a single light-emitting element in a light-emitting element array according to an embodiment of the present invention;
第7A圖至第7G圖係為依照本發明實施例之一種發光裝置的製作方法流程各階段所對應之剖面圖;Figures 7A to 7G are cross-sectional views corresponding to each stage of the manufacturing method of a light-emitting device according to an embodiment of the present invention;
第7H圖係為依照本發明實施例之晶粒級的紅綠藍發光元件單元包含如圖7G所示之紅綠藍發光元件群組之俯視圖;FIG. 7H is a top view of a grain-level red, green, and blue light-emitting element unit including the red, green, and blue light-emitting element group shown in FIG. 7G according to an embodiment of the present invention;
第7I圖係為依照本發明實施例之單一發光元件的晶粒級的發光元件單元之剖面圖;FIG. 7I is a cross-sectional view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention;
第7J圖係為依照本發明實施例之單一發光元件的晶粒級的發光元件單元之俯視圖;FIG. 7J is a top view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention;
第8A圖係為依照本發明實施例之顯示模組之示意圖;FIG. 8A is a schematic diagram of a display module according to an embodiment of the present invention;
第8B圖係為依照本發明實施例之顯示模組之示意圖;以及FIG. 8B is a schematic diagram of a display module according to an embodiment of the present invention; and
第9圖係為依照本發明實施例之燈泡元件分解圖。Fig. 9 is an exploded view of a light bulb component according to an embodiment of the present invention.
300d’:發光元件 300d’: light emitting element
240a:介電層 240a: dielectric layer
298:波長轉換層 298:Wavelength conversion layer
23:電路載板 23: Circuit carrier board
22:金屬接觸 22: Metal contact
260’:第一金屬層 260': the first metal layer
262’:第二金屬層 262': second metal layer
24:透明封裝材料 24: Transparent packaging material
680:填充材料 680: Filling material
Claims (10)
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US14/082,960 US9018655B2 (en) | 2005-02-03 | 2013-11-18 | Light emitting apparatus and manufacture method thereof |
US14/082,960 | 2013-11-18 |
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TW109128911A TWI755825B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus |
TW105117288A TWI706579B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus and manufacturing method thereof |
TW106144714A TWI663749B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus and manufacturing method thereof |
TW103139968A TWI542045B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus and manufacturing method thereof |
TW111101583A TWI808610B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus |
TW107143874A TWI711190B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus and manufacturing method thereof |
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Family Applications Before (4)
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TW109128911A TWI755825B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus |
TW105117288A TWI706579B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus and manufacturing method thereof |
TW106144714A TWI663749B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus and manufacturing method thereof |
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Family Applications After (2)
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TW107143874A TWI711190B (en) | 2013-11-18 | 2014-11-18 | Light emitting apparatus and manufacturing method thereof |
TW107139294A TWI715885B (en) | 2013-11-18 | 2014-11-18 | Light-emitting element array |
Country Status (2)
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CN (5) | CN108321272A (en) |
TW (7) | TWI755825B (en) |
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Also Published As
Publication number | Publication date |
---|---|
TW202218190A (en) | 2022-05-01 |
TWI755825B (en) | 2022-02-21 |
CN109585620B (en) | 2022-07-01 |
TW202046517A (en) | 2020-12-16 |
TW201631800A (en) | 2016-09-01 |
TW201907586A (en) | 2019-02-16 |
CN108198807A (en) | 2018-06-22 |
TW201521239A (en) | 2015-06-01 |
TWI542045B (en) | 2016-07-11 |
TW201810722A (en) | 2018-03-16 |
CN112164737A (en) | 2021-01-01 |
TWI706579B (en) | 2020-10-01 |
TWI711190B (en) | 2020-11-21 |
CN109585620A (en) | 2019-04-05 |
CN108321272A (en) | 2018-07-24 |
TWI715885B (en) | 2021-01-11 |
CN104659162A (en) | 2015-05-27 |
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TW201921732A (en) | 2019-06-01 |
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