CN100472819C - Light emitting cell having composite conductive layer - Google Patents
Light emitting cell having composite conductive layer Download PDFInfo
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- CN100472819C CN100472819C CNB031603165A CN03160316A CN100472819C CN 100472819 C CN100472819 C CN 100472819C CN B031603165 A CNB031603165 A CN B031603165A CN 03160316 A CN03160316 A CN 03160316A CN 100472819 C CN100472819 C CN 100472819C
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Abstract
The luminous element includes a luminescence lamination, a second transparent oxidative conducting layer and a composite conducting layer. The composite conducting layer includes first transparent oxidative conducting layer and a metal layer. The second transparent oxidative conducting layer is positioned between the metal layer and luminescence lamination the second transparent oxidative conducting layer forms good ohmic contact with the luminous element and with metl layer. Thus, the metal layer will not be influenced by interfusion so as to maintain good light transmissivity and raise luminous efficiency of luminous element.
Description
Technical field
The present invention relates to a kind of light-emitting component, relate to a kind of light-emitting component especially with composite conducting layer.
Background technology
The application of light-emitting diode is rather extensive, for example, can be applicable to optical display, traffic lights, information accumulation device, communication device, lighting device and medical treatment device.How improving the brightness of light-emitting diode, is the important topic of light-emitting diodes pipe manufacturer.
At United States Patent (USP) the 5th, 789, in No. 768 (its applicant is identical with this case), light emitting diode construction is as shown in Figure 1 disclosed, this prior art light-emitting diode is characterised in that and forms a transparent conductive oxide layer 16 on the contact layer 15 that the electric current from preceding electrode 18 flows out can evenly distribute in transparent conductive oxide layer 16, the transmissivity of this transparent conductive oxide layer can reach more than 85% in addition, and feasible light by this transparent conductive oxide layer of luminescent layer directive can penetrate easily; Because the resistance value of transparent conductive oxide layer is about 20～100 Ω/, under this resistance value operation, to send out light-emitting component feasible even be applied to small size, but just inapplicable when being applied to large-sized light-emitting component.
At United States Patent (USP) the 5th, 563, a kind of light emitting diode construction is disclosed in No. 422, wherein on a P type contact layer, form as thin as a wafer a Ni/Au transparency conducting layer with low temperature, utilize the low-resistance value of metal, reaching the effect of CURRENT DISTRIBUTION, thereby improve the characteristics of luminescence of light-emitting diode.Yet in fact, the transparency conducting layer made from this type of material, through after the fusion treatment, its transmissivity is only about 50%～70%, therefore influences the luminous efficiency of light-emitting diode.
In Taiwan patent the 134th, in No. 587, a kind of light emitting element structure is disclosed, there is a combined type anti-reflecting layer in the surface of this element, wherein this compound anti-reflecting layer is by a conductive layer, and for example Ag contacts with the AlInGaP element, one conductive oxide layer is arranged on the conductive layer, increase electrodiffusion efficient with this; This combined type anti-reflecting layer also can place between the substrate of described light-emitting component and the luminous lamination to form a combined type reflector in addition, and this combined type reflector can reflect away the light of directive substrate, to improve luminous efficiency.Yet in fact, metal conducting layer is difficult for forming good Ohmic contact with each type semiconductor layer of light-emitting component, by reference " modern GaAs processing method (Modern GaAs ProcessingMethod) ", Williams, Ralph.1990, p219 is as can be known described, Ag, Au or Ag/Au alloy can't form good Ohmic contact with semiconductor, and other metallic conductor can form ohmic contact after merging through heating, but its transmissivity and reflectivity all reduce significantly, can't reach the purpose of described raising luminous efficiency.Mention its conductive layer Ag in addition in this patent and utilize vapour deposition method directly to be formed on the semiconductor layer, yet in fact, Ag and the non-constant of semi-conductive engaging force are easy to peel off behind evaporation, are unfavorable for that subsequent technique carries out.
When how the inventor solves described shortcoming in thinking, obtain an invention inspiration, think if by using one second transparent conductive oxide layer, it is between the semiconductor layer of this metal level and light-emitting component, this second transparent conductive oxide layer and light-emitting component and metal level form good Ohmic contact, and the influence that metal level is not merged still can be kept preferable light transmission efficiencies and reflection efficiency, so can improve emitting component.In addition, rely on this second transparent conductive oxide layer to strengthen engaging force between luminous lamination or substrate and the composite conducting layer, make the structure-reinforced of light-emitting component, be beneficial to the carrying out of subsequent technique.
Summary of the invention
Main purpose of the present invention is to provide a light-emitting component with composite conducting layer, and this light-emitting component comprises: a luminous lamination; One second transparent conductive oxide layer; One composite conducting layer, wherein this composite conducting layer comprises one first a transparent conductive oxide layer and a metal level at least; And a substrate, because this second transparent conductive oxide layer between this metal level and this luminous lamination, makes the influence that metal level is not merged, still can keep light transmission efficiencies or reflection efficiency preferably.
Another object of the present invention is to utilize this second transparent conductive oxide layer to be present between this metal level and this luminous lamination, make this second transparent conductive oxide layer form good Ohmic contact with light-emitting component and metal level respectively.
Another purpose of the present invention is to utilize this second transparent conductive oxide layer to strengthen engaging force between luminous lamination or substrate and the composite conducting layer, makes the structure-reinforced of light-emitting component, is beneficial to the carrying out of subsequent technique.
The invention provides a kind of light-emitting component, comprising: a substrate with composite conducting layer; One luminous lamination is formed on this substrate; One composite conducting layer is formed on this luminous lamination, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this luminous lamination and is formed at metal level on this first transparent conductive oxide layer; One second transparent conductive oxide layer is formed on this composite conducting layer; And electrode.
The present invention also provides a kind of light-emitting component with composite conducting layer, comprising: a substrate; One composite conducting layer is formed on this substrate, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this substrate and is formed at metal level on this first transparent conductive oxide layer; One second transparent conductive oxide layer is formed on this composite conducting layer; One luminous lamination is formed on this second transparent conductive oxide layer; And electrode.
The present invention provides a kind of light-emitting component with composite conducting layer again, comprising: a composite conducting layer, and wherein this composite conducting layer comprises that at least one first transparent conductive oxide layer and is formed at the metal level on this first transparent conductive oxide layer; One second transparent conductive oxide layer is formed on this composite conducting layer; One substrate is formed on this second transparent conductive oxide layer; One luminous lamination is formed on this substrate; And electrode.
The present invention provides a kind of light-emitting component with composite conducting layer again, comprising: one first link electrode; One substrate is formed on this first link electrode; One first bond course is formed on this substrate; One luminescent layer is formed on this first bond course; One second bond course is formed on this luminescent layer; One first contact layer is formed on this second bond course; One composite conducting layer is formed on this first contact layer, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this first contact layer and is formed at metal level on this first transparent conductive oxide layer; One second transparent conductive oxide layer is formed on this composite conducting layer; And one second link electrode, be formed on this second transparent conductive oxide layer.
The present invention provides a kind of light-emitting component with composite conducting layer in addition, comprising: one first link electrode; One substrate is formed on this first link electrode; One composite conducting layer is formed on this substrate, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this substrate and is formed at metal level on this first transparent conductive oxide layer; One second transparent conductive oxide layer is formed on this composite conducting layer; One second contact layer is formed on this second transparent conductive oxide layer; One first bond course is formed on this second contact layer; One luminescent layer is formed on this first bond course; One second bond course is formed on this luminescent layer; One first contact layer is formed on this second bond course; And one first link electrode, be formed on this second contact layer.
The present invention provides a kind of light-emitting component with composite conducting layer in addition, comprising: a metal substrate; One composite conducting layer is formed on this metal substrate, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this metal substrate and is formed at metal level on this first transparent conductive oxide layer; One second transparent conductive oxide layer is formed on this composite conducting layer; One first bond course is formed on this second transparent conductive oxide layer; One luminescent layer is formed on this first bond course; One second bond course is formed on this luminescent layer; One first contact layer is formed on this second bond course; One first link electrode is formed on this first contact layer.
Another kind of the present invention has the light-emitting component of composite conducting layer, comprising: a composite conducting layer, and wherein this composite conducting layer comprises that at least one first transparent conductive oxide layer and is formed at the metal level on this first transparent conductive oxide layer; One second transparent conductive oxide layer is formed on this composite conducting layer; One dielectric substrate is formed on this second transparent conductive oxide layer; One second contact layer is formed on this dielectric substrate, and wherein, the upper surface of this second contact layer comprises a first surface zone and a second surface zone; One first bond course is formed on this first surface zone; One luminescent layer is formed on this first bond course; One second bond course is formed on this luminescent layer; One first contact layer is formed on this second bond course; One second link electrode is formed on this second surface zone; And one first link electrode, be formed on this first contact layer.
According to one preferred embodiment of the present invention, the light-emitting component with composite conducting layer comprises: one first electrode; Be formed at the substrate on this first link electrode; Be formed at one first bond course on this substrate; Be formed at the luminescent layer on this first bond course; Be formed at one second bond course on this luminescent layer; Be formed at one first contact layer on this second bond course; Be formed at the composite conducting layer on this first contact layer, wherein this composite conducting layer comprises and is formed at one first transparent conductive oxide layer on this first contact layer and is formed at a metal level on this first transparent conductive oxide layer; Be formed at one second transparent conductive oxide layer on this composite conducting layer; And be formed at one second link electrode on this second transparent conductive oxide layer.
Described substrate comprises at least a material that is selected from the material group that GaP, GaAs, GaAsP, AlGaAs, SiC or Ge constitute; Described dielectric substrate comprises and is selected from Al
2O
3Or at least a material in the material group that glass constituted or other alternative material; Described metal level comprises at least a material that is selected from the material group that In, Sn, Al, Au, Pt, Zn, Ag, Pb, Pd, Ge, Cu, AuBe, AuGe, PbSn or AuZn constitute; Described first, second bond course comprises at least a material that is selected from the material group that AlGaInP, AlN, GaN, AlGaN, InGaN or AlInGaN constitute; Described luminescent layer comprises at least a material that is selected from the material group that AlGaInP, GaN, InGaN or AlInGaN constitute; Described first or second contact layer comprises at least a material that is selected from the material group that GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN or AlGaN constitute; Described first, second or the 3rd transparent conductive oxide layer comprise at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the material group that zinc-tin oxide constituted.
Described substrate comprises at least a material that is selected from the material cohort that GaP, GaAs and Ge constitute; Described first bond course, luminescent layer and second bond course comprise AlGaInP; Described first contact layer comprises at least a material that is selected from the material group that GaP, GaAs, GaAsP, InGaP, AlGaInP and AlGaAs constitute; Described first or second transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the material group that zinc-tin oxide constituted; Described metal level comprises at least a material that is selected from the material group that In, Sn, Al, Au, Pt, Zn, Ag, Pb, Pd, Ge, Cu, AuBe or AuGe constitute.
Description of drawings
Fig. 1 is a schematic diagram, has shown a light-emitting diode structure based on prior art;
Fig. 2 is a schematic diagram, has shown a kind of light-emitting component with composite conducting layer according to one preferred embodiment of the present invention;
Fig. 3 is a schematic diagram, has shown according to the present invention a kind of light-emitting component with composite conducting layer of another preferred embodiment;
Fig. 4 A～4B has shown that under wavelength 400～670nm scope the number of plies that changes composite conducting layer metal level and oxidic, transparent, conductive layers is to the transmissivity of composite conducting layer and the influence of reflectivity;
Fig. 5 A～5B has shown that under wavelength 400～670nm scope the combination thickness that changes composite conducting layer metal level and oxidic, transparent, conductive layers is to the transmissivity of composite conducting layer and the influence of reflectivity; And
Fig. 6 is a schematic diagram, has shown according to the present invention a kind of light-emitting component with composite conducting layer of a preferred embodiment again.
Description of reference numerals
10 substrates
11 first bond courses
12 luminescent layers
13 second bond courses
14 window layers
15 contact layers
16 transparent conductive oxide layers
17 rear electrodes
Electrode before 18
2 light-emitting components
20 substrates
22 first bond courses
23 luminescent layers
24 second bond courses
25 first contact layers
26 composite conducting layers
261 first transparent conductive oxide layers
262 the first metal layers
27 second transparent conductive oxide layers
28 second link electrodes
29 first link electrodes
3 light-emitting components
30 substrates
301 articulamentums
31 second contact layers
32 first bond courses
33 luminescent layers
34 second bond courses
35 first contact layers
36 composite conducting layers
361 first transparent conductive oxide layers
362 the first metal layers
363 second transparent conductive oxide layers
364 second metal levels
37 the 3rd transparent conductive oxide layers
38 second link electrodes
39 first link electrodes
6 light-emitting components
60 dielectric substrate
61 second contact layers
62 first bond courses
63 luminescent layers
64 second bond courses
65 first contact layers
66 composite conducting layers
661 first transparent conductive oxide layers
662 the first metal layers
663 second transparent conductive oxide layers
664 second metal levels
665 the 3rd transparent conductive oxide layers
666 the 3rd metal levels
67 the 4th transparent conductive oxide layers
68 first link electrodes
69 second link electrodes
Embodiment
See also Fig. 2, according to one preferred embodiment of the present invention, the light-emitting component 2 with composite conducting layer comprises: one first link electrode 29; Be formed at the substrate 20 on this first link electrode 29; Be formed at one first bond course 22 on this substrate 20; Be formed at the luminescent layer 23 on this first bond course 22; Be formed at one second bond course 24 on this luminescent layer 23; Be formed at one first contact layer 25 on this second bond course 24; Be formed at the composite conducting layer 26 on this first contact layer 25, wherein this composite conducting layer 26 comprises and is formed at one first transparent conductive oxide layer 261 on this first contact layer 25 and is formed at a the first metal layer 262 on this first transparent conductive oxide layer 261; Be formed at one second transparent conductive oxide layer 27 on this composite conducting layer; And be formed at one second link electrode 28 on this second transparent conductive oxide layer 27.Light-emitting component 2 according to this preferred embodiment, it utilizes a composite conducting layer to reach the purpose that electric current disperses, wherein the transmissivity of this composite conducting layer can reach more than 80%, and only about 3 Ω of resistance value/, can take into account that transmittance is good, low-resistance value and adjust the purpose of brightness.
See also Fig. 3, another preferred embodiment according to the present invention, the light-emitting component 3 with composite conducting layer comprises: one first link electrode 39; Be formed at the substrate 30 on this first link electrode 39; Be formed at the articulamentum 301 on this substrate 30; Be formed at the composite conducting layer 36 on this articulamentum 301, wherein this composite conducting layer 36 comprises the one first transparent conductive oxide layer 361 that is formed on this articulamentum 301, be formed at the first metal layer 362 on this first transparent conductive oxide layer 361, be formed at one second transparent conductive oxide layer 363 on this first metal layer 362, be formed at one second metal level 364 on this second transparent conductive oxide layer 363; Be formed at one the 3rd transparent conductive oxide layer 37 on this composite conducting layer; Be formed at one second contact layer 31 on the 3rd transparent conductive oxide layer 37; Be formed at one first bond course 32 on this second contact layer 31; Be formed at the luminescent layer 33 on this first bond course 32; Be formed at one second bond course 34 on this luminescent layer 33; Be formed at one first contact layer 35 on this second bond course 34; And be formed at one second link electrode 38 on this first contact layer 35.The purpose of present embodiment is to utilize the multipath reflection effect of this composite conducting layer, the light by this composite conducting layer of luminescent layer directive can be penetrated only about 1 Ω of the resistance value of this composite conducting layer/ via reflection.
In described second preferred embodiment, this substrate also can replace with metal substrate, so just can omit first link electrode in the light-emitting component, makes component structure more simplify.
In described second preferred embodiment, also can between first contact layer of light-emitting component 3 and second link electrode, form one second composite conducting layer and one the 4th transparent conductive oxide layer, the electric current of this structure disperses better, utilize the high transmission and the high reflex of these two groups of composite conducting layers in addition respectively, applicable to large-sized light-emitting component.
See also Fig. 4 A and Fig. 4 B, shown under wavelength 400～670nm scope, when the metal level of change composite conducting layer and the number of plies of oxidic, transparent, conductive layers, the variation situation of the transmissivity of composite conducting layer and reflectivity; See also Fig. 5 A and Fig. 5 B, shown when adjusting the composition thickness of composite conducting layer the variation situation of the transmissivity of composite conducting layer and reflectivity.By Fig. 4 A, Fig. 4 B, Fig. 5 A and Fig. 5 B as can be known, change the number of plies of composite conducting layer or form thickness, can change its reflectivity or transmissivity, therefore can utilize this characteristic to improve the brightness of light-emitting component or change its brightness.
See also Fig. 6, the preferred embodiment tool again according to the present invention, there is the light-emitting component 6 of composite conducting layer to comprise: a composite conducting layer 66, wherein this composite conducting layer 66 comprises one first transparent conductive oxide layer 661, be formed at the first metal layer 662 on this first transparent conductive oxide layer 661, be formed at one second transparent conductive oxide layer 663 on this first metal layer 662, be formed at one second metal level 664 on this second transparent conductive oxide layer 663, be formed at one the 3rd transparent conductive oxide layer 665 on this second metal level 664, be formed at one the 3rd metal level 666 on the 3rd transparent conductive oxide layer 665; Be formed at one the 4th transparent conductive oxide layer 67 on this composite conducting layer; Be formed at the dielectric substrate 60 on the 4th transparent conductive oxide layer 67; Be formed at one second contact layer 61 on this dielectric substrate 60, wherein, the upper surface of this second contact layer 61 comprises a first surface zone and a second surface zone; Be formed at one first bond course 62 on this first surface zone; Be formed at the luminescent layer 63 on this first bond course 62; Be formed at one second bond course 64 on this luminescent layer 63; Be formed at one first contact layer 65 on this second bond course 64; Be formed at one first link electrode 68 on this first contact layer; And be formed at one second link electrode 69 on this second surface zone.
Described substrate comprises at least a material that is selected from the material group that GaP, GaAs, GaAsP, AlGaAs, SiC or Ge constitute; Described dielectric substrate comprises and is selected from Al
2O
3Or at least a material in the material group that glass constituted or other alternative material; Described first, second or the 3rd metal level comprise at least a material that is selected from the material group that In, Sn, Al, Au, Pt, Zn, Ag, Pb, Pd, Ge, Cu, AuBe, AuGe, PbSn or AuZn constitute; Described first bond course comprises at least a material that is selected from the material group that AlGaInP, AlN, GaN, AlGaN, InGaN or AlInGaN constitute; Described luminescent layer comprises at least a material that is selected from the material group that AlGaInP, GaN, InGaN or AlInGaN constitute; The described second constraint series of strata comprise at least a material that is selected from the material group that AlGaInP, AlN, GaN, AlGaN, InGaN and AlInGaN constitute; Described first or second contact layer comprises at least a material that is selected from the material group that GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN or AlGaN constitute; The described first, second, third or the 4th transparent conductive oxide layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the material group that zinc-tin oxide constituted.
Though light-emitting diode of the present invention discloses as above with preferred embodiment, yet protection scope of the present invention is not limited to above preferred embodiment, and should be with being as the criterion that claims were defined.Therefore any those skilled in the art not breaking away under claim scope of the present invention and the spirit, should make various changes.
Claims (27)
1. light-emitting component with composite conducting layer comprises:
One substrate;
One luminous lamination is formed on this substrate;
One composite conducting layer is formed on this luminous lamination, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this luminous lamination and is formed at metal level on this first transparent conductive oxide layer;
One second transparent conductive oxide layer is formed on this composite conducting layer; And
Electrode.
2. light-emitting component with composite conducting layer comprises:
One substrate;
One composite conducting layer is formed on this substrate, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this substrate and is formed at metal level on this first transparent conductive oxide layer;
One second transparent conductive oxide layer is formed on this composite conducting layer;
One luminous lamination is formed on this second transparent conductive oxide layer; And
Electrode.
3. light-emitting component with composite conducting layer comprises:
One composite conducting layer, wherein this composite conducting layer comprises that at least one first transparent conductive oxide layer and is formed at the metal level on this first transparent conductive oxide layer;
One second transparent conductive oxide layer is formed on this composite conducting layer;
One substrate is formed on this second transparent conductive oxide layer;
One luminous lamination is formed on this substrate; And
Electrode.
4. light-emitting component with composite conducting layer comprises:
One first link electrode;
One substrate is formed on this first link electrode;
One first bond course is formed on this substrate;
One luminescent layer is formed on this first bond course;
One second bond course is formed on this luminescent layer;
One first contact layer is formed on this second bond course;
One composite conducting layer is formed on this first contact layer, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this first contact layer and is formed at metal level on this first transparent conductive oxide layer;
One second transparent conductive oxide layer is formed on this composite conducting layer; And
One second link electrode is formed on this second transparent conductive oxide layer.
5. light-emitting component with composite conducting layer comprises:
One first link electrode;
One substrate is formed on this first link electrode;
One composite conducting layer is formed on this substrate, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this substrate and is formed at metal level on this first transparent conductive oxide layer;
One second transparent conductive oxide layer is formed on this composite conducting layer;
One second contact layer is formed on this second transparent conductive oxide layer;
One first bond course is formed on this second contact layer;
One luminescent layer is formed on this first bond course;
One second bond course is formed on this luminescent layer;
One first contact layer is formed on this second bond course; And
One second link electrode is formed on this first contact layer.
6. light-emitting component with composite conducting layer comprises:
One metal substrate;
One composite conducting layer is formed on this metal substrate, and wherein this composite conducting layer comprises that at least one is formed at the first transparent conductive oxide layer and on this metal substrate and is formed at metal level on this first transparent conductive oxide layer;
One second transparent conductive oxide layer is formed on this composite conducting layer;
One first bond course is formed on this second transparent conductive oxide layer;
One luminescent layer is formed on this first bond course;
One second bond course is formed on this luminescent layer;
One first contact layer is formed on this second bond course;
One first link electrode is formed on this first contact layer.
7. light-emitting component with composite conducting layer comprises:
One composite conducting layer, wherein this composite conducting layer comprises that at least one first transparent conductive oxide layer and is formed at the metal level on this first transparent conductive oxide layer;
One second transparent conductive oxide layer is formed on this composite conducting layer;
One dielectric substrate is formed on this second transparent conductive oxide layer;
One second contact layer is formed on this dielectric substrate, and wherein, the upper surface of this second contact layer comprises a first surface zone and a second surface zone;
One first bond course is formed on this first surface zone;
One luminescent layer is formed on this first bond course;
One second bond course is formed on this luminescent layer;
One first contact layer is formed on this second bond course;
One second link electrode is formed on this second surface zone; And
One first link electrode is formed on this first contact layer.
8. as claim 1,2,3,4,5,6 or 7 described light-emitting components with composite conducting layer, wherein, the metal level in this composite conducting layer can have light transmission or opaqueness.
9. as claim 1,2,3,4,5,6 or 7 described light-emitting components, wherein, on this composite conducting layer, can form many group composite conducting layers with composite conducting layer.
10. as claim 1,2,3,4,5,6 or 7 described light-emitting components with composite conducting layer, wherein, the combination thickness of this composite conducting layer can be adjusted.
11. the light-emitting component with composite conducting layer as claimed in claim 1 wherein, on this substrate, formed a composite conducting layer and one the 3rd transparent conductive oxide layer respectively in regular turn before forming this luminous lamination.
12. the light-emitting component with composite conducting layer as claimed in claim 4 wherein, on this substrate, formed a composite conducting layer and one the 3rd transparent conductive oxide layer respectively in regular turn before forming this first bond course.
13., wherein, on this luminous lamination, form a composite conducting layer and one the 3rd transparent conductive oxide layer respectively in regular turn as claim 2 or 3 described light-emitting components with composite conducting layer.
14., wherein, on this first contact layer, before forming this first link electrode, form a composite conducting layer and one the 3rd transparent conductive oxide layer respectively in regular turn as claim 5,6 or 7 described light-emitting components with composite conducting layer.
15. the light-emitting component with composite conducting layer as claimed in claim 2 wherein, on this substrate, formed an articulamentum before forming this composite conducting layer.
16. the light-emitting component with composite conducting layer as claimed in claim 6 wherein, on this metal substrate, formed an articulamentum before forming this composite conducting layer.
17. the light-emitting component with composite conducting layer as claimed in claim 15 wherein, forms a composite conducting layer and one the 3rd transparent conductive oxide layer respectively in regular turn on this luminous lamination.
18. the light-emitting component with composite conducting layer as claimed in claim 16 wherein, on this first contact layer, formed a composite conducting layer and one the 3rd transparent conductive oxide layer respectively in regular turn before forming this first link electrode.
19. as claim 1,2,3,4,5,6 or 7 described light-emitting components with composite conducting layer, wherein, this first transparent conductive oxide layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the material group that zinc-tin oxide constituted.
20. as claim 1,2,3,4,5,6 or 7 described light-emitting components with composite conducting layer, wherein, this second transparent conductive oxide layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the material group that zinc-tin oxide constituted.
21. as claim 11,12,17 or 18 described light-emitting components with composite conducting layer, wherein, the 3rd transparent conductive oxide layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the material group that zinc-tin oxide constituted.
22. as claim 1,4 or 5 described light-emitting components with composite conducting layer, wherein, this substrate comprises at least a material that is selected from the material group that GaP, GaAs, GaAsP, AlGaAs, SiC or Ge constitute.
23. the light-emitting component with composite conducting layer as claimed in claim 2, wherein, this substrate comprises and is selected from Si, GaAs, SiC, Al
2O
3, at least a material in the material group that glass, quartz, GaP, GaAsP, AlGaAs or metal constituted.
24. as claim 3 or 7 described light-emitting components with composite conducting layer, wherein, this substrate comprises and is selected from Al
2O
3, at least a material in glass or the quartzy material group that is constituted.
25. as claim 1,2,3,4,5,6 or 7 described light-emitting components with composite conducting layer, wherein, this metal level comprises at least a material that is selected from the material group that In, Sn, Al, Au, Pt, Zn, Ag, Pb, Pd, Ge, Cu, AuBe, AuGe, PbSn or AuZn constitute.
26. as claim 4,5,6 or 7 described light-emitting components with composite conducting layer, wherein, this first bond course comprises at least a material that is selected from the material group that AlGaInP, AlN, GaN, AlGaN, InGaN or AlInGaN constitute.
27. as claim 4,5,6 or 7 described light-emitting components with composite conducting layer, wherein, this luminescent layer comprises at least a material that is selected from the material group that AlGaInP, GaN, InGaN or AlInGaN constitute.
28. as claim 4,5,6 or 7 described light-emitting components with composite conducting layer, wherein, this second bond course comprises at least a material that is selected from the material group that AlGaInP, AlN, GaN, AlGaN, InGaN and AlInGaN constitute.
29. as claim 4,5,6 or 7 described light-emitting components with composite conducting layer, wherein, this first contact layer comprises at least a material that is selected from the material group that GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN or AlGaN constitute.
30. as claim 5 or 7 described light-emitting components with composite conducting layer, wherein, this second contact layer comprises at least a material that is selected from the material group that GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN or AlGaN constitute.
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| TWI366291B (en) | 2007-03-30 | 2012-06-11 | Epistar Corp | Semiconductor light-emitting device having stacked transparent electrodes |
| CN101286541B (en) * | 2007-04-09 | 2012-04-11 | 晶元光电股份有限公司 | Semi-conductor illuminating device having fold transparent electrode |
| TWI755825B (en) * | 2013-11-18 | 2022-02-21 | 晶元光電股份有限公司 | Light emitting apparatus |
-
2003
- 2003-09-26 CN CNB031603165A patent/CN100472819C/en not_active Expired - Lifetime
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| CN1602124A (en) | 2005-03-30 |
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