TW201521239A - Light emitting apparatus and manufacturing method thereof - Google Patents

Abstract

The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units.

Description

Light emitting device and manufacturing method thereof

[1] The present invention relates to a light-emitting element, a method of fabricating the same, a light-emitting element array, and a method of fabricating the same, and more particularly to a light-emitting device and a method of fabricating the same.

[2] Conventional light-emitting diode (LED) packaging technology first dispenses on a sub-mount, and then fixes the light-emitting diode wafer on the wafer holder to form a light-emitting diode component. This step is called Die Bonding. The solid crystal glue is mainly made of conductive silver glue or other non-conductive epoxy resin. The LED components are then combined on a circuit board. A flip chip type light emitting diode system exposes a p-type semiconductor conductive layer and an n-type semiconductor conductive layer in a diode structure to the same side, so that the cathode and anode electrodes can be fabricated in a diode structure. On the same side, the light-emitting diode structure provided with the anode and cathode electrodes can be directly placed on a solder. In this way, the need for conventional metal wire bonding can be eliminated. However, conventional flip-chip light-emitting diodes still need to be packaged by cutting, solid-crystal, etc., in order to be connected to the circuit board. Therefore, if the electrode of the flip-chip type light-emitting diode has a sufficiently large contact area, the conventional packaging step can be omitted. [3] The operating current of conventional LEDs is about tens to hundreds of milliamps (mA), but the brightness is often insufficient to meet the general lighting needs. If a large number of LEDs are combined to increase the brightness, the volume of the LED lighting elements will increase and the competition in the market will decrease. Therefore, it is an inevitable trend to increase the grain brightness of a single LED. However, when the LED is developed toward high brightness, the operating current and power of a single LED increase by several times to several hundred times that of a conventional LED. For example, the operating current of a high-brightness LED is about several hundred milliamperes to several amps. The thermal problems caused by LEDs cannot be ignored. The performance of LEDs is reduced by "hot". For example, the thermal effect affects the wavelength of the LEDs. The characteristics of the semiconductors are also attenuated by the heat, and even worse, the components are damaged. Therefore, how to dissipate high-power LEDs becomes an important issue for LEDs. [4] U.S. Patent Application No. 2004/0188696 and 2004/023189 (division of 2004/0188696) respectively disclose an LED package structure and method using Surface Mount Technology (SMT), wherein each package The structure contains an LED wafer. Each LED wafer is first bonded in a flip chip form by bonding bumps on a front side of a sub-mount. An array of pre-cut apertures is provided in the wafer holder and filled with metal to form a via array. The electrodes of the wafer can be connected to the back side of the wafer holder by the array of channels. This channel array can also serve as a heat dissipation path for the LED chip. After each LED wafer is adhered to the sub-substrate, the sub-substrate is then diced for subsequent LED packaging. [5] However, in the wafer holders of U.S. Patent Application Nos. 2004/0188696 and 2004/023189, it is necessary to cut a via array filled with metal to increase the process cost. In addition, the step of attaching each LED chip to the wafer holder also increases the complexity of fabrication. Therefore, if it has a light-emitting diode, it does not require a wafer holder, and has a good heat dissipation path, which has an advantage in the market.

[6] The present invention discloses a method of fabricating a light-emitting device, comprising the steps of: providing a first carrier having a plurality of first metal contacts; providing a substrate; forming a plurality of light-emitting layers and a plurality of trenches on the substrate a plurality of light-emitting laminates separated from each other by a plurality of trenches; connecting the plurality of light-emitting laminates to the first carrier; forming a package material collectively on the plurality of light-emitting laminates; and cutting the first carrier and the encapsulating material to form A plurality of grain level light emitting element units. [7] In an embodiment of the invention, the method for fabricating the light emitting device further comprises: forming a first wavelength conversion layer on a first light emitting layer, wherein the first wavelength conversion layer converts light emitted by the first light emitting layer a first light; forming a second wavelength conversion layer on a second light emitting layer, the second wavelength converting layer converting light emitted by the second light emitting layer into a second light; and providing a third light emitting stack The layer does not have any wavelength conversion material above the third light emitting layer, wherein the light emitted by the first light emitting layer, the second light emitting layer, and the third light emitting layer is blue light, and the first light is green light and the second light The light is red.

[31] The above described features and advantages of the present invention will be more apparent from the following description of the embodiments. In the drawings, the shape or thickness of the elements may be enlarged or reduced. It is to be noted that elements not shown or described in the figures may be in a form known to those skilled in the art. The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any changes or modifications of the present invention to those skilled in the art will be made without departing from the spirit and scope of the invention. [32] Referring to FIGS. 1A to 1E, there are shown cross-sectional views corresponding to respective stages of a flow of a method for fabricating a light-emitting element according to an embodiment of the present invention. In FIG. 1A, a light emitting structure 100 is formed, which comprises a substrate 11 and a first conductive layer 102 as a cladding layer, and an active layer 104 is disposed on the first conductive layer 102 as a light emitting layer. A second conductive layer 106 is disposed on the active layer 104 as another cladding layer. Preferably, as shown in FIG. 1A, an electrode or bonding pad 107a is located on the exposed portion of the first conductive layer 102, and the other electrode or bonding pad 107b is positioned on the second conductive layer 106. The materials of the electrodes or pads 107a and 107b (e.g., aluminum) and methods of fabrication are well known to those skilled in the art and will not be further described herein. In addition, in an embodiment, the light emitting structure 100 further includes a passivation layer 120 to protect the light emitting structure 100. The material of the protective layer 120 (e.g., cerium oxide) and the method of fabrication are also well known to those skilled in the art and will not be described herein. In one embodiment, the first conductive layer 102 is an n-type semiconductor conductive layer, and the second conductive layer 106 is a p-type semiconductor conductive layer. The n-type semiconductor conductive layer 102 and the p-type semiconductor conductive layer 106 are semiconductor materials of any conventional or future visible, preferably a III-V (three/five) group compound semiconductor, such as aluminum gallium indium nitride (Al)._x Ga_y Ln_{(1 -x-y)} N) or aluminum gallium indium phosphide (Al_x Ga_y In_(1-xy) P), where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1, and is further doped by the p/n type dopant as appropriate. The active layer 104 can also use conventional semiconductor materials and structures. For example, the material can be aluminum gallium indium nitride (Al)._x Ga_y Ln_{(1 -x-y)} N) or aluminum gallium indium phosphide (Al_x Ga_y Ln_{(1 -x-y)} P), etc., and the structure may be Single Quantum Well (SQW), Multiple Quantum Well (MQW) and Double Heterosture (DH), and the principle and mechanism of illumination are conventional techniques. I will not repeat them here. In addition, the light emitting structure 100 can be subjected to a metalorganic chemical vapor deposition (MOCVD), a molecular beam epitaxy (MBE) process, or a hydride vapor phase epitaxy (HVPE) process. Production. [34] Next, as shown in FIG. 1B, a first dielectric layer 122 is formed on the light emitting structure 100. Preferably, the first dielectric layer 122 is a transparent dielectric layer and has a thickness of D ≦ 20 μm, thereby effectively conducting heat generated by the light emitting structure 100. The material of the first dielectric layer 122 may be cerium oxide (SiO₂ ), tantalum nitride (Si₃ N₄ ), or a combination thereof, which can be made by MOCVD or MBE. [35] Thereafter, referring to FIG. 1C, a second dielectric layer 140 is formed on the first dielectric layer 122. The material of the second dielectric layer 140 may be one selected from the group consisting of cerium oxide, cerium nitride, polyimide, BCB (bisbenzocyclobutene), and photoresist. Preferably, the thickness of the second dielectric layer 140 is about 25 μm, which is formed by a printing technique. [36] Referring to FIG. 1D, after the second dielectric layer 140 is formed, a metal layer 160 is formed, the metal layer 160 is located on the light emitting structure 100 and electrically contacts the first conductive layer 102, and a portion of the metal layer 160 is located at the first On the dielectric layer 122; and forming a metal layer 162, the metal layer 162 is located on the light emitting structure 100 and electrically contacts the second conductive layer 106, and a portion of the metal layer 162 is located on the first dielectric layer 122. The first dielectric layer 122 and the second dielectric layer 140 are separated from the metal layer 160 and the metal layer 162 . The material of the metal layer 160 or the metal layer 162 may be selected from gold (Au), aluminum (Al), silver (Ag), alloys thereof, or the like, or other conventional metals. Preferably, the metal layer 160 and the metal layer 162 are formed together by a printing technique or electroplating. Through the above steps, the light-emitting element 10 is completed. In one embodiment, the first dielectric layer 122 is a transparent dielectric layer, and the contact surface of the first dielectric layer 122 and the metal layer 160 and/or the metal layer 162 is used to reflect the light emitted by the light emitting structure 100. Therefore, the light output intensity of the light-emitting element 10 can be effectively improved. In addition, the metal layer 160 and/or the metal layer 162 also serves as a heat dissipation path of the light emitting structure 100. When the metal layer 160 and the metal layer 162 have large contact areas A1 and A2, it also contributes to efficient and rapid heat dissipation. [38] Referring to FIG. 1E, after forming the structure as shown in FIG. 1D, the method of fabricating the light-emitting element further includes a step of removing the substrate 11, thereby exposing the first conductive layer 102. The substrate 11 can be, for example, a sapphire substrate or a gallium arsenide substrate. When the substrate 11 is a sapphire substrate, the substrate 11 can be removed by an excimer laser. The excimer laser can have an energy of 400 mJ/cm 2 (mJ/cm)² A krypton fluoride (KrF) excimer laser having a wavelength of 248 nm and a pulse width of 38 nanoseconds (ns). At higher temperatures, such as 60 ° C, when the excimer laser is illuminated on the sapphire substrate, the sapphire substrate is removed to expose the first conductive layer 102. In addition, when the substrate 11 is a gallium arsenide substrate, a ratio of 1:35 ammonia water (NH)₄ OH) and hydrogen peroxide (H₂ O₂ a solution or a ratio of 5:3:5 phosphoric acid (H)₃ PO₄ ), hydrogen peroxide (H₂ O₂ The solution with water can be used to remove the gallium arsenide substrate, thereby exposing the first conductive layer 102. [39] After the substrate 11 is removed, the method of fabricating the light-emitting element further includes roughening the surface 102a of the first conductive layer 102. For example, when the first conductive layer 102 is an aluminum gallium nitride (Al)_x Ga_y Ln_{(1 -x-y )} The N) layer, the surface 102a thereof may be roughened by an etching solution, which may be, for example, a potassium hydroxide (KOH) solution. In addition, when the first conductive layer 102 is an aluminum gallium indium phosphide (Al_x Ga_y In_(1-xy) The P) layer, a solution of hydrochloric acid (HCl) and phosphoric acid, can be used to roughen the surface 102a of the first conductive layer 102, and the roughening time can be, for example, 15 seconds. The roughened surface 102a of the first conductive layer 102 can reduce the possibility of occurrence of total reflection, thereby increasing the light extraction efficiency of the light emitting element. [40] The light-emitting element 10 shown in FIG. 1E and the light-emitting elements 10a, 10b, and 10c shown in FIG. 1D provide a sufficiently large contact area (preferably occupying at least one half of the cross-sectional area of the light-emitting element 10), and the light-emitting element 10a The 10b and 10c are directly connected to the circuit carrier 13 by a solder 12, and do not require processes such as die bonding and wire bonding. In one embodiment, the light-emitting element 10a emits red light (R), the light-emitting element 10b emits green light (G), and the light-emitting element 10c emits blue light (B), and the three are respectively connected to the circuit carrier 13 for image display. . Referring to FIGS. 2A to 2D, there are shown cross-sectional views corresponding to various stages of the flow of the method for fabricating a light-emitting element array according to an embodiment of the present invention. In Figure 2A, a substrate 21 is first provided, such as a sapphire substrate, a gallium arsenide (GaAs) substrate, or other combination of substrates well known to those skilled in the art. Next, a plurality of light emitting structures 200a, 200b, and 200c are formed on the substrate 21. For the materials and manufacturing methods of the light-emitting structures 200a, 200b, and 200c, reference may be made to the light-emitting structures 100 of FIGS. 1A to 1D. Similarly, the light-emitting structures 200a, 200b, and 200c may be subjected to a metalorganic chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, or a hydride vapor phase epitaxial growth process. Phase epitaxy, HVPE) process and other production. [42] Next, as shown in FIG. 2B, a dielectric layer 222a is formed on the light emitting structure 200a to form a dielectric layer 222b on the light emitting structure 200b, and a dielectric layer 222c is formed on the light emitting structure 200c. Preferably, as in the dielectric layer 122 shown in FIG. 1B, the dielectric layers 222a, 222b, and 222c are a transparent dielectric layer and have a thickness of D ≦ 20 μm, thereby effectively conducting the light emitting structures 200a, 200b, and 200c. The heat generated. The material of the dielectric layers 222a, 222b, and 222c may be a combination of cerium oxide, tantalum nitride, or the like, which may be fabricated by MOCVD or MBE. [43] Thereafter, referring to FIG. 2C, a dielectric layer 240a is formed on the dielectric layer 222a, a dielectric layer 240b is formed on the dielectric layer 222b, and a dielectric layer 240c is formed on the dielectric layer 222c. The material of the dielectric layers 240a, 240b, 240c may be one selected from the group consisting of cerium oxide, cerium nitride, polyimide, BCB (bisbenzocyclobutene), and photoresist. Preferably, as in the dielectric layer second 140 shown in FIG. 1C, the dielectric layers 240a, 240b, 240c each have a thickness of about 25 μm and are formed by a printing technique. In one embodiment, a dielectric layer 280 is formed between the light emitting structures 200a, 200b, 200c to electrically insulate the light emitting elements 20a, 20b, and 20c (as shown in FIG. 2D). In this embodiment, the material of the dielectric layer 280 is the same as that of the dielectric layers 240a, 240b, 240c, such as polyamidene, and utilizes a process (eg, a printing technique) and dielectric layers 240a, 240b, 240c. Formed together. In another embodiment, the material of the dielectric layer 280 is different from the material of the dielectric layers 240a, 240b, 240c and is formed by different processes. [44] Referring to FIG. 2D, metal layers 260a, 260b, 260c are formed; and metal layers 262a, 262b, 262c are formed. The material of the metal layers 260a, 260b, 260c, 262a, 262b, and 262c may be selected from alloys of gold (Au), aluminum (Al), silver (Ag), or the like. Preferably, the metal layers 260a, 260b, 260c, 262a, 262b, and 262c are formed by a printing technique or electroplating. Through the above steps, the light-emitting element array 20 having the light-emitting elements 20a, 20b, and 20c is completed. [45] As shown in FIGS. 2E to 2F, in an embodiment, the light-emitting elements 20a, 20b, and 20c provide a sufficiently large contact area to directly connect to the circuit carrier 23 using a solder 22 . . Further, the substrate 21 is separated from the light-emitting element array 20, and the light-emitting element array 20 can be used for image display. For example, after the solder material 20 is directly connected to the light-emitting elements 20a, 20b, and 20c and the circuit carrier 23, the method of fabricating the light-emitting element further includes a step of removing the substrate 21. Substrate 11 can be, for example, a sapphire substrate and can be removed by an excimer laser. The excimer laser can have an energy of 400 mJ/cm 2 (mJ/cm)² A krypton fluoride (KrF) excimer laser having a wavelength of 248 nm and a pulse width of 38 nanoseconds (ns). At higher temperatures, such as 60 ° C, when the excimer laser is illuminated on the sapphire substrate, the sapphire substrate is removed to expose the first conductive layer 102. In addition, when the substrate 11 is a gallium arsenide substrate, a ratio of 1:35 ammonia water (NH)₄ OH) and hydrogen peroxide (H₂ O₂ a solution or a ratio of 5:3:5 phosphoric acid (H)₃ PO₄ ), hydrogen peroxide (H₂ O₂ The solution with water can be used to remove the gallium arsenide substrate, thereby exposing the first conductive layer 102. [46] After the substrate 21 is removed, the method of fabricating the light-emitting device further includes roughening the surface 102a of the first conductive layer 102. For example, when the first conductive layer 102 is an aluminum gallium nitride (Al)_x Ga_y Ln_{(1 -x-y )} The N) layer, the surface 102a thereof may be roughened by an etching solution, which may be, for example, a potassium hydroxide (KOH) solution. In addition, when the first conductive layer 102 is an aluminum gallium indium phosphide (Al_x Ga_y In_1-xy The P) layer, a solution of hydrochloric acid (HCl) and phosphoric acid, can be used to roughen the surface 102a of the first conductive layer 102, and the roughening time can be, for example, 15 seconds. The roughened surface 102a of the first conductive layer 102 can reduce the possibility of occurrence of total reflection, thereby increasing the light extraction efficiency of the light emitting element. In one embodiment, as shown in FIG. 2G, a transparent encapsulating material 24 is used to cover the light emitting device array 20 including the light emitting elements 20a, 20b, and 20c and to connect the circuit carrier 23, thereby forming the light emitting device package 25. The transparent encapsulating material 24 can be, for example, an epoxy resin or other suitable material well known to those skilled in the art. [47] Referring to FIGS. 3A to 3G, there are shown cross-sectional views corresponding to various stages of a method of fabricating a light-emitting device according to an embodiment of the present invention. Referring to FIG. 3A, a substrate 21 is provided which is single crystal and comprises sapphire, gallium arsenide, gallium nitride or germanium; epitaxial growth of a first conductive layer 102 on the substrate 21, and a first conductive layer 102 As a cladding layer; epitaxial growth of an active layer 104 comprising a multiple quantum well ( MQW) structure on the first conductive layer 102, wherein the active layer 104 serves as a light-emitting layer; and epitaxial growth The second conductive layer 106 is on the active layer 104, wherein the second conductive layer 106 serves as another cladding layer. Next, the first conductive layer 102, the active layer 104, and the second conductive layer 106 are etched to form a plurality of light-emitting stacks 101 separated from each other by trenches (not shown) on the substrate 21, and each of the light-emitting stacks In 101, a portion of the first conductive layer 102 is exposed. Next, a protective layer 120 is formed on each of the light emitting laminates 101, and the protective layer 120 covers a portion of the first conductive layer 102, a portion of the second conductive layer 106, and a sidewall of the light emitting laminate 101. Next, an electrode or bonding pad 107a electrically connected to the first conductive layer 102 is disposed on the exposed portion of each of the first conductive layers 102, and a second conductive layer is disposed on each of the second conductive layers 106. 106 electrically connected electrodes or bond pads 107b. <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td></td></tr></TBODY></TABLE> [48] Thereafter, referring to FIG. 3B, a reflective layer 221 is disposed on each of the protective layers 120, and a first dielectric layer 122 covering the reflective layer 221 is formed on each of the protective layers 120. For the light emitted by the light-emitting layer 101, the reflective layer 221 has a reflectance equal to or greater than 80%. The material of the reflective layer 221 comprises a metal such as silver, a silver alloy, aluminum or an aluminum alloy. In one embodiment, the material of the reflective layer 221 comprises a polymer mixed with inorganic particles, wherein the inorganic particles are composed of a metal oxide or a material having a reflectance equal to or greater than 1.8, and the material of the reflective layer 221 is, for example, An epoxy resin mixed with titanium oxide particles. Each of the reflective layers 221 is completely covered by the corresponding protective layer 120 and the first dielectric layer 122, thereby electrically insulating the respective reflective layers 221 and the corresponding light-emitting stacks 101. In another embodiment, the protective layer 120 is omitted, and the reflective layer 221 is directly formed on the second conductive layer 106 and electrically connected to the second conductive layer 106. Then, as shown in FIG. 3C, a second dielectric layer 240 is formed on the substrate 21 and between the trenches and on each of the light emitting stacks 101, and each of the second dielectric layers 240 exposes the corresponding electrode. Or bond pad 107a and electrode or bond pad 107b. Thereafter, a first metal layer 260 and a second metal layer 262 are formed between each of the second dielectric layers 240 and a portion of the corresponding first dielectric layer 122. The first metal layer 260 and the second metal layer 262 are formed on the corresponding electrode or bonding pad 107a and the electrode or bonding pad 107b, respectively. The material of the first metal layer 260 and the second metal layer 262 comprises an alloy of gold, aluminum, silver or the like. In one embodiment, the first metal layer 260 and the second metal layer 262 are formed by a printing technique or electroplating. [00] As shown in FIG. 3D, the second dielectric layer 240 patterned between the adjacent light-emitting layers 101 is formed with a recess in the second dielectric layer 240, and the recess exposes a portion of the substrate 21 and The second dielectric layer 240 is spaced apart to form a dielectric layer 240a, after which an opaque layer 290 is formed in the recess. In one embodiment, the opaque layer 290 acts as a reflective layer or a light absorbing layer to reflect or absorb the light emitted by the corresponding luminescent layer 101 and to avoid the mutual influence of the light emitted by the adjacent luminescent layer 101. Or generate crosstalk. For the light emitted by the corresponding light-emitting stack 101, the opaque layer 290 has a transmittance of less than 50%. The material of the opaque layer 290 comprises a metal or a polymer containing inorganic particles, wherein the inorganic particles are composed of a metal oxide or a material having a reflectance equal to or greater than 1.8, and the material of the reflective layer 221 is, for example, An epoxy resin mixed with titanium oxide particles. Thus far, the light-emitting element array 30 including the plurality of light-emitting elements 300 is completed. As shown in FIG. 3E, a circuit carrier 23 is provided which includes a plurality of metal contacts 22 on the upper surface and the lower surface of the circuit carrier 23 and a conductive via 22a including a plurality of through circuit carriers 23, wherein the conductive vias 22a can connect metal contacts 22 on the upper surface of the circuit carrier and metal contacts 22 on the lower surface of the circuit carrier. In one embodiment, the circuit carrier 23 contains a solder. The circuit carrier 23 contains FR-4, BT (Bismaleimide-Triazine) resin, ceramic or glass. The thickness of the circuit carrier 23 is between 50 and 200 microns to adequately support the light-emitting elements and still have a small volume. The light emitting element array 30 is directly connected to the circuit carrier 23 in a flip chip form by aligning the first metal layer 260 and the second metal layer 262 of each of the light emitting elements 300 to the corresponding metal contacts 22. It is to be noted that a region other than the metal contact 22 between the light emitting element array 30 and the circuit carrier 23 may be formed with a void. Alternatively, the filler material may be selectively filled in the void to enhance the joint strength and mechanical support. After the light emitting element array 30 and the circuit carrier 23 are connected, the substrate 21 of the light emitting element array 30 is removed. In one embodiment, the substrate comprises sapphire, the light-emitting stack 101 comprises gallium nitride, and the method of removing the substrate 21 is included in a higher temperature, such as 60 ° C, using a quasi-laser laser at the first The interface between the conductive layer 102 and the substrate 21 is followed by separation of the substrate 21 from the first conductive layer 102. The excimer laser can have an energy of 400 mJ/cm 2 (mJ/cm)² A krypton fluoride (KrF) excimer laser having a wavelength of 248 nm and a pulse width of 38 nanoseconds (ns). In another embodiment, when the substrate 21 is a gallium arsenide substrate, the method of removing the substrate 21 comprises using a 1:35 ratio of ammonia (NH).₄ OH) and hydrogen peroxide (H₂ O₂ a mixture or a ratio of 5:3:5 phosphoric acid (H)₃ PO₄ ), hydrogen peroxide (H₂ O₂ The mixture with water is etched to completely remove the substrate 21 and expose the first conductive layer 102, the dielectric layer 240a, and the opaque layer 290 of each of the light-emitting elements 300. [50] As shown in FIG. 3F, after the substrate 21 is removed, the method of fabricating the light-emitting device further includes roughening the exposed surface of the first conductive layer 102. In an embodiment, the first conductive layer 102 comprises aluminum gallium indium nitride (Al)_x Ga_y Ln_{(1 -x-y)} N, where 0 ≦ x, y ≦ 0), the exposed surface of the first conductive layer 102 may be etched using a potassium hydroxide (KOH) solution to form a roughened surface 102a. In another embodiment, the first conductive layer 102 comprises aluminum gallium phosphide (Al)_x Ga_y In_{(1 -x-y)} P), the exposed surface of the first conductive layer 102 may be etched using a solution of hydrochloric acid (HCl) or phosphoric acid to form a roughened surface 102a, which may be, for example, 15 seconds. The roughened surface 102a of each of the first conductive layers 102 can reduce the possibility of total reflection of light in each of the light-emitting elements 300, thereby increasing the light extraction efficiency of the light-emitting elements. After the roughening step, the plurality of recessed regions are located on the roughened surface 102a and are substantially surrounded by the dielectric layer 240a. In one embodiment, in order to form a die-level red, green, and blue light-emitting element unit for a display, the fabrication method of the embodiment can selectively apply a first wavelength conversion layer 294 to the light-emitting element 300b for conversion. Light, as shown in Figure 3F. For example, the light-emitting layer 101 of the light-emitting element 300b emits blue light having a dominant wavelength between 430 nm and 470 nm, and is converted into a first converted light, for example, having a main wavelength of 610 nm to Red light between 690 nm. Further, a second wavelength conversion layer 296 can be selectively coated on the light-emitting element 300c to convert the light emitted by the light-emitting element 300c into a second converted light, for example, having a dominant wavelength of 500 nm to Green light between 570 nm. The light-emitting element 300a is not coated with any wavelength converting material to directly emit blue light from the roughened surface 102a of the light-emitting element 300a. In one embodiment, the first or second wavelength conversion layer forms a film having a substantially uniform thickness by collecting a nanometer quantum dot or a nanometer phosphor powder, and by using a film A bonding layer (not shown) is attached to the light emitting laminate 101. In another embodiment, the first or second wavelength conversion layer comprises a nanometer-sized quantum dot or a nano-scale phosphor powder having an average diameter or an average characteristic length of between 10 nm and 500 nm. between. The length or characteristic length of each nano-scale quantum dot or nano-scale phosphor is substantially less than 1000 nm. Nano-scale quantum dots comprise a semiconductor material, such as a composition having Zn_x Cd_y Mg_Lxy A II-VI (di/hexa) compound semiconductor of Se in which x and y are tuned to cause green light or red light after photo-excitation of a II-VI (di/hexa) compound semiconductor. "Feature length" is defined as the maximum distance between a phosphor powder or a point at either end of a quantum dot. Thereafter, a transparent encapsulating material 24 such as an epoxy resin or a silicone is applied to the upper surface of the light emitting element array 32 to fix the wavelength converting material to the light emitting layer 101, and as the light emitting element array 32 Optical lenses of light-emitting elements 300a, 300b, 300c. In another embodiment, the materials of the wavelength conversion layer covering the light-emitting elements 300a, 300b, 300c are the same. Fig. 4A is a plan view showing the light-emitting element array 32 as shown in Fig. 3F connected to the circuit carrier 23 in a flip chip form. Both the light emitting element array 32 and the circuit carrier 23 are in the form of wafers having the same or similar dimensions. The light-emitting element array 32 includes a plurality of red, green, and blue light-emitting element groups that are staggered and continuously disposed in a two-dimensional space, and each group includes one light-emitting element 300a and one light-emitting element 300b as shown by the dotted circle in the figure. And a light emitting element 300c. [52] Finally, a dicing step is performed to simultaneously cut the light-emitting element array 32 and the circuit carrier 23 to form a plurality of grain-level red, green and blue light-emitting element units 35 as shown in FIG. 3G, each of the grain level The red-green-blue light-emitting element unit 35 includes a blue light-emitting element 300a that emits blue light, a red light-emitting element 300b that emits red light, and a green light-emitting element 300c that emits green light. The grain-level red, green and blue light-emitting element unit 35 is a device that is package-free and is a surface-adhesive type, that is, after the cutting step, it can be directly bonded to a printed circuit carrier without a conventional packaging step. . The transparent encapsulating material 24 collectively covers the light emitting elements 300a, 300b, and 300 and does not extend to the side walls of the light emitting elements 300a, 300b, and 300c. In one embodiment, the dicing step simultaneously cuts the light emitting element array 32 and the circuit carrier 23 to form a plurality of grain level red, green and blue light emitting element units, wherein the red, green and blue light emitting element units of each grain level comprise a plurality of Red, green and blue light-emitting component groups. The plurality of red, green and blue light emitting elements are arranged in an I*J array in a red, green and blue light emitting element unit, wherein I and J are positive integers, and at least one of I and J is greater than one. The ratio of I to J is preferably close to or equal to 1/1, 3/2, 4/3 or 16/9. Referring to FIG. 4B, the red-green-blue light-emitting element unit 35 of the grain level includes a red-green-blue light-emitting element group as shown in FIG. 3G. The grain-level red-green-blue light-emitting element unit 35 is a first rectangle having a first long side and a first short side, wherein the first short side has a first width S1 and the first long side has a larger than the first A first length S2 of width S1. Each of the light emitting laminates 101 is a second rectangle having a second long side and a second short side, wherein the second short side has a second width d1 and the second long side has a second larger than the second width d1 Length d2. The second short side of the light-emitting layer 101 is substantially disposed on the first long side of the red-green-blue light-emitting element unit 35 parallel to the grain level or substantially disposed on the red-green-blue light-emitting element unit 35 perpendicular to the grain level. The first short side. In an embodiment, the red, green and blue light emitting element unit 35 can be used as one pixel of the indoor display panel. In order to make the television display having a diagonal of 40 吋 and a pixel resolution of 1024*768 all use the light-emitting element pixels, the area of each pixel needs to be less than about 0.64 square millimeters (mm).² ). Therefore, the area of the red-green-blue light-emitting element unit 35 can be, for example, less than 0.36 mm.² . The first length S2 and the first width S1 are both less than 0.6 mm, and the aspect ratio of the red, green and blue light-emitting element unit 35, that is, S2/S1, is preferably less than 2/1. According to the embodiment of the present invention, the distance between the first metal layer 260 and the second metal layer 262, that is, the first distance S3, is limited by the alignment control of the light emitting element array and the circuit carrier in the connecting step. . The first distance S3 is equal to or greater than 25 microns (micron) and less than 150 microns to ensure process tolerance and provide sufficient contact area for electrical conduction. The distance between one of the edges of the red-green-blue light-emitting element unit 35 and one of the light-emitting stacks 101 of the red-green-blue light-emitting element unit 35, that is, the second distance S4, is limited by the tolerance of the cutting step. The second distance S4 is equal to or greater than 25 microns and less than 60 microns to ensure tolerance of the cutting step and to maintain the advantages of a small volume. The distance between two adjacent illuminating elements, that is, the third distance S5 is limited to the lithography etching step, and is less than 50 microns, or preferably less than 25 microns, whereby more remains between the luminescent stacks 101. area. For each of the light-emitting stacks 101 in the red-green-blue light-emitting element unit 35, the second width d1 is between 20 and 150 microns and the second length d2 is between 20 and 550 microns. The ratio of the area of the red-green-blue light-emitting element unit 35 to the total area of the light-emitting stack 101 is less than 2 or between 1.1 and 2, and preferably between 1.2 and 1.8. The area of the light-emitting stack 101 depends on the desired brightness and pixel size. It should be noted that the shape of the red, green and blue light emitting element unit 35 may also be a square whose four sides are the same as the first width S1. In one embodiment, a pixel includes two red, green and blue light emitting element units 35, one for normal operation and the other for standby to prevent malfunction of the normally operating red, green and blue light emitting element unit 35. The first width S1 is preferably less than 0.3 mm, whereby the two red, green and blue light emitting element units 35 are disposed within one pixel. The invention has the advantages that the light-emitting element can be realized as a pixel element of a flat-panel television, and the resolution can be further improved to twice or four times the pixel resolution of 1024*768. In another embodiment, a red, green, and blue light emitting element unit 35 includes two red, green, and blue light emitting element groups, one for normal operation and the other for standby to prevent normal operation of the red, green, and blue light emitting element groups. malfunction. [54] Referring to FIGS. 5A to 5C, there is shown a crystal-level light-emitting element unit according to an embodiment of the present invention, a manufacturing method and structure thereof, and an embodiment shown in FIGS. 3A to 3G and related thereto. The disclosure is similar, except that prior to the cutting step, the array of light-emitting elements 34 comprises a plurality of identical light-emitting elements 300d, as shown in Figure 5A. Each of the light-emitting elements 300d is coated with the same or different wavelength conversion layer 298, and the wavelength conversion layer 298 is used to convert the light emitted by the light-emitting layer 101 of the corresponding light-emitting element 300d, for example, the main wavelength is between 430 nm and 470. The blue light between the nanometers is converted into yellow light, green light or converted light from light. Referring to FIGS. 5B and 5C, a plan view and a cross-sectional view of the light-emitting element unit 36 including the die-level of a single light-emitting element after the dicing step. The size of the grain-level light-emitting element unit 36 is similar to or the same as the size of the grain-level red-green-blue light-emitting element unit 35 shown in FIG. 4B. The grain-level light-emitting element unit 36 is a first rectangle having a first long side and a first short side, wherein the first long side has a first length S1 and the first short side has a smaller than the first length S1 A width S6. Each of the light emitting laminates 101 is a second rectangle having a second long side and a second short side, wherein the second short side has a second width d1 and the second long side has a second larger than the second width d1 Length d2. The second short side of the light emitting stack 101 is substantially disposed on the first short side of the red, green and blue light emitting element unit 36 parallel to the grain level or substantially disposed in the red, green and blue light emitting element unit 36 perpendicular to the grain level. The first long side. In one embodiment, the red, green, and blue light emitting element unit 36 is a portion of a pixel for an indoor display panel. The area of the red-green-blue light-emitting element unit 36 may be, for example, less than 0.12 mm.² . The first length S1 and the first width S6 are both less than 0.2 mm, and the aspect ratio of the red, green and blue light-emitting element unit 36, that is, S1/S6, is preferably less than 2/1. According to the present invention, the distance between the first metal layer 260 and the second metal layer 262, that is, the first distance S3, is limited by the alignment control of the light-emitting element array and the circuit carrier in the connecting step. The first distance S3 is equal to or greater than 25 microns and less than 150 microns to ensure process tolerance and provide sufficient contact area for electrical conduction. The distance between one of the edges of the red, green and blue light-emitting element unit 36 and its light-emitting stack 101, that is, the second distance S4, is limited by the tolerance of the cutting step. The second distance S4 is equal to or greater than 25 microns and less than 60 microns to ensure tolerance of the cutting step and to maintain the advantages of a small volume. For the light-emitting stack 101 in the grain-level red, green, and blue light-emitting element unit 36, the second width d1 is between 20 and 150 microns and the second length d2 is between 20 and 550 microns. The ratio of the area of the grain-level red-green-blue light-emitting element unit 36 to the total area of the light-emitting stack 101 is less than 2 or between 1.1 and 2, and preferably between 1.2 and 1.8. The area of the light-emitting stack 101 depends on the desired brightness and pixel size. It should be noted that the shape of the red, green and blue light emitting element unit 36 may also be a square whose four sides are the same as the first width S6. Similarly, the shape of the light emitting laminate 101 may also be a square having the same width as the second width d1. In one embodiment, a pixel includes at least three grain level red, green, and blue light emitting element units 36 to emit blue, red, and green light. [55] Referring to FIGS. 5D to 5E, there is shown a crystal-level light-emitting element unit according to an embodiment of the present invention, a manufacturing method and structure thereof, and an embodiment shown in FIGS. 5A to 5C and related thereto. The disclosure is similar, except that the opaque layer 290 can be selectively omitted. The red, green and blue light-emitting element unit 36' is directly surface-attached to a light panel contained in a light fixture. The area of the light-emitting stack 101 depends on the desired brightness and the size of the light panel or luminaire. For applications such as low power of less than 0.3 watts, the area of the light-emitting stack 101 of the red-green-blue light-emitting element unit 36' is 100 mils.² Up to 200mil² For applications such as medium power between 0.3 and 0.9 watts, the area of the light-emitting stack 101 of the red-green-blue light-emitting element unit 36' is 201 mils.² To 900 mil² For applications such as high power above 0.9 watts, the area of the light-emitting stack 101 of the red-green-blue light-emitting element unit 36' is greater than 900 mils.² . The dielectric layer 240a surrounding the light-emitting layer stack 101 serves as a coupling lens for taking out the light-emitting element unit 36' of the grain level. The ratio of the area of the crystal-level light-emitting element unit 36' to the area of the light-emitting layer 101 is equal to or greater than 9, and preferably equal to or greater than 15, thereby having better light extraction efficiency and light dispersibility. In the present invention, the distance between the first metal layer 260 and the second metal layer 262, that is, the first distance S3', is limited by the alignment control of the light-emitting element array and the circuit carrier in the connecting step. The first distance S3' is equal to or greater than 25 microns and less than 150 microns to ensure process tolerance and provide sufficient contact area for electrical conduction. It is to be noted that the shape of the light-emitting element unit 36' of the grain level may also be a square having the same width as the first width S6'. Similarly, the shape of the light-emitting laminate 101 may be a square having the same width as the second width d1'. The first width S6' is the same as the second width d1' or three times larger than the second width d1'. Preferably, the first width S6' is the same as the second width d1' or is greater than the second width d1'. In order to make the light-emitting element unit 36' of the grain level have better light extraction efficiency. In one example, the dielectric layer has a different thickness on the sidewall of the light emitting laminate 101, and thus the first ratio (S6'/d1') of the first width S6' and the second width d1' is different from the first length S1. A second ratio (S1'/d2') to the second length d2', in order to achieve operation, looks at the grain level light-emitting element unit 36' which has an asymmetrical light field characteristic. Furthermore, the first ratio is at least twice the second ratio, or preferably four times the second ratio. Referring to FIG. 6A, there is shown a cross-sectional view of a grain-level red, green and blue light-emitting element unit 65 according to an embodiment of the present invention, a manufacturing method and structure thereof, and an embodiment shown in FIGS. 3A to 3G. And the related disclosure is similar, except that a filling material 680 is filled in the gap between the light-emitting element array 32' including the light-emitting elements 300a', 300b' and 300c' and the circuit carrier 23, thereby improving both The strength of the connection and the current path between the circuit carrier and the light-emitting elements. The filling material 680 includes an anisotropic conductive film (ACF) having a current in a vertical path between the light emitting element array 32' and the circuit carrier 23 and between the light emitting element array 32' and the circuit carrier 23. The ability to insulate current in parallel with the lateral path of the array of light-emitting elements 32' or the circuit carrier. The filling material 680 is applied to the circuit carrier 23 before connecting the array of light emitting elements to the circuit carrier 23. In one embodiment, neither the first metal layer 260' nor the second metal layer 262' contact the metal contacts 22 of the circuit carrier 23. Filler material 680 is positioned between first metal layer 260', second metal layer 262' and metal contact 22 to conduct electrical current between first metal layer 260', second metal layer 262', and metal contact 22. The first metal layer 260' and the second metal layer 262' are patterned so that the surface facing the metal contact 22 is a roughened surface having a plurality of recesses and protrusions. Therefore, the contact area between the array of the light-emitting elements and the circuit carrier is increased, and the connection strength between the array of the light-emitting elements and the circuit carrier is also improved. The plurality of concave portions and the convex portions have a regular shape or an irregular shape, and the surface roughness (Ra) is between 0.5 and 5 μm. An advantage of using the isotropic conductive paste as the filling material is that the distance between the first metal layer 260' and the second metal layer 262', i.e., the first distance S3 as shown in Fig. 4B, may be less than 25 microns. Fig. 6B is a schematic view showing a single light-emitting element 300d' in the light-emitting element array 32' shown in Fig. 6A. The filling material 680 and the patterned surface of the first metal layer 260' and the second metal layer 262' can also be applied to the embodiments as shown in FIGS. 5A-5C, thereby forming a structure as shown in FIG. 6B. . The filling material 680 is filled in the gap between the light-emitting element 300d' and the circuit carrier 23 to improve the connection strength between the two and to provide a current path between the circuit carrier and the light-emitting element. The filling material 680 includes an anisotropic conductive film (ACF) having a current in a vertical path between the light emitting element 300d' and the circuit carrier 23 and parallel between the light emitting element 300d' and the circuit carrier 23. The ability to insulate current in the lateral path of light-emitting element 300d' or circuit carrier. The filling material 680 is applied to the circuit carrier 23 before connecting the array of light emitting elements to the circuit carrier 23. In one embodiment, neither the first metal layer 260' nor the second metal layer 262' contact the metal contacts 22 of the circuit carrier 23. Filler material 680 is positioned between first metal layer 260', second metal layer 262' and metal contact 22 to conduct current between first metal layer 260', second metal layer 262', and metal contact 22. The first metal layer 260' and the second metal layer 262' are patterned so that there are a plurality of recesses and protrusions on the surface facing the metal contacts 22. Therefore, the contact area between the light-emitting element and the circuit carrier is increased, and the connection strength between the light-emitting element and the circuit carrier is also improved. The plurality of concave portions and the convex portions have a regular shape or an irregular shape, and the surface roughness (Ra) is between 0.5 and 5 μm. Similarly, the filling material 680 and the patterned surface of the first metal layer 260' and the second metal layer 262' can also be applied to the above-described embodiment as shown in FIG. 5E to form a structure as shown in FIG. 6C. . [58] Referring to FIGS. 7A to 7G, there are cross-sectional views corresponding to various stages of the flow of a method for fabricating a light-emitting device according to an embodiment of the present invention, wherein steps 7A and 7D and structure and 2A are used. The embodiment shown in FIG. 2D and the related disclosure are similar, and the steps and structures of FIGS. 7F to 7G are similar to the embodiments shown in FIGS. 3E to 3F and related disclosures, and are different. Wherein, as shown in FIG. 7C, the dielectric layers 240a, 240b, 240c, and 280 are a photoresist, such as a positive photoresist or a negative photoresist; as shown in FIGS. 7D to 7E, After forming the metal layers 260a, 260b, 260c and forming the metal layers 262a, 262b, 262c, the fabrication method further comprises removing the dielectric layers 240a, 240b, 240c, 280, thereby forming a void in two adjacent light-emitting elements. Between and between the metal layers of the single light-emitting element; as shown in FIGS. 7F to 7G, after the substrate 21 is removed, the two adjacent light-emitting elements are separated from each other by the gap, and the manufacturing method is further Including roughening the exposed surface of the first conductive layer 102 to form a thick Surface 102a, roughening methods described above, will be omitted here. In one embodiment, in order to form a chip-scale red, green and blue light-emitting element for display or illumination, a method of fabricating a first wavelength conversion layer on the light-emitting element 300b is selectively applied. 294, as shown in FIG. 7G, converts light emitted by the light-emitting element 300b into a first converted light. Further, a second wavelength conversion layer 296 can be selectively coated on the light-emitting element 300c to convert the light emitted by the light-emitting element 300c into a second converted light. The light-emitting element 300a is not coated with any wavelength converting material to directly emit blue light from the roughened surface 102a of the light-emitting element 300a. The formation manner and material of each conversion layer are as described above, and will not be described herein. 7H is a plan view of a red, green and blue light-emitting element unit of a grain level according to an embodiment of the present invention, including a red, green and blue light-emitting element group as shown in FIG. 7G, and a first width of the red-green-blue light-emitting element unit 37. S1, the first length S2, the second length d2, the first distance S3, the second distance S4, the second width d1, and the third distance S5 are as described in the embodiment shown in FIG. 4B and related disclosures. No longer, the difference is that the light-emitting layer 101 is not surrounded by the dielectric layer 240a and the opaque layer 290. After forming the first wavelength conversion layer 294 and the second wavelength conversion layer 296, the dicing step is directly performed without directly coating the transparent encapsulation material 24 of the foregoing embodiment to directly cut the circuit carrier 23 without cutting light. The element array 32 forms a plurality of grain-level red, green and blue light-emitting element units. Referring to FIGS. 7I and 7J, there are a cross-sectional view and a plan view of a light-emitting element unit 37 including a single-level light-emitting element after the dicing step. The first length S1, the first width S6, the second width d1, the second length d2, the first distance S3, and the second distance S4 of the grain-level light-emitting element unit 37 are as shown in the embodiment of FIG. 5B and related disclosure The details are not described here. The difference is that the sidewalls of the light-emitting layer 101, the first metal layer 260, and the second metal layer 262 do not have the dielectric layer 240a and the opaque layer 290; There is no transparent encapsulation material 24 on the wavelength conversion layer 298. Referring to FIG. 8A, a display module 76 according to an embodiment of the present invention includes a plurality of die-level red, green and blue light-emitting element units 65 on a second circuit carrier 73. For example, any two adjacent grain-level red, green, and blue light-emitting element units 65 are separated from each other by a pitch or seamlessly disposed to bring them into contact with each other. The second circuit carrier 73 includes a circuit 72 electrically connected to the respective light-emitting elements of the red-green-blue light-emitting element unit 65, thereby independently controlling the blue, red and green light-emitting elements in each of the red-green-blue light-emitting element units 65. . In one embodiment, the display module 76 includes M columns and N rows of grain level red, green and blue light emitting element units 65 for a display having X*Y pixel resolution, where M/N = 1/1 , 3/2, 4/3 or 16/9, X=a*M, Y=b*N, and both a and b are positive integers equal to or greater than 2. The display module 76 includes more than 500 red, green and blue light emitting element units 65 in an area of one square inch. That is, display module 76 includes more than 1500 light-emitting stacks 101 in an area of one square inch. In another embodiment, each of the die-level red, green, and blue light emitting element units includes a plurality of red, green, and blue light emitting element groups, and each group includes a blue light emitting element and a red light emitting element as previously described. And a green light-emitting element. The plurality of red, green and blue light-emitting elements are arranged in an I*J array in a grain-level red, green and blue light-emitting element unit, wherein I and J are positive integers, and at least one of I and J is greater than one. The ratio of I to J is preferably close to or equal to 1/1, 3/2, 4/3 or 16/9. In a grain-level red, green and blue light-emitting element unit, the distance between two adjacent light-emitting stacks respectively from two adjacent red-green-blue light-emitting element groups is substantially equal to respectively from two adjacent The distance between two adjacent light-emitting stacks of the grain-level red, green and blue light-emitting element units. The display module 76 includes M columns and N rows of grain level red, green and blue light emitting element units 65 for a display having X*Y pixel resolution, where M /N = 1/1, 3/2, 4 /3 or 16/9, X=a*M*I, Y=b*N*J, and both a and b are positive integers equal to or greater than 2. The display module 76 contains more than 500 red, green and blue light-emitting component groups in an area of one square inch. That is, display module 76 includes more than 1500 light-emitting stacks 101 in an area of one square inch. Each of the red, green and blue light emitting element units and the red, green and blue light emitting element units can be independently driven by the circuit formed on the circuit carrier 23 and the second circuit carrier 73. The material of the second circuit carrier 73 is also FR-4, BT (Bismaleimide-Triazine) resin, ceramic or glass. Figure 8B is a schematic illustration of a lighting module 78 in accordance with an embodiment of the present invention. The lighting module 78 includes a plurality of grain level light emitting element units 66 on the second circuit carrier 73. Depending on the applied driving voltage, the chip level light emitting element units 66 can be connected in series or in parallel by circuitry on the second circuit carrier 73. In one embodiment, the illumination module 78 is disposed within the bulb 80 as shown in FIG. The light bulb 80 further includes an optical lens 82 covering the illumination module 78, a connection surface and the illumination module 78 is a heat dissipation groove 85 on the connection surface, a connection portion 87 connected to the heat dissipation groove 85, and a connection portion. An electrical connector 88 that is coupled to and electrically coupled to the lighting module 78. The embodiment described above is only for explaining the technical idea and the features of the present invention, and the object of the present invention is to enable those skilled in the art to understand the contents of the present invention and implement it according to the present invention. The scope of the patent, i.e., the equivalent variations or modifications made by the spirit of the invention, should be covered by the scope of the invention.

[61] 100, 200a, 200b, and 200c‧‧ ‧ luminescent structure [62] 11, 21 ‧ ‧ substrate [63] 102 ‧ ‧ first conductive layer [64] 104 ‧ ‧ active layer [65] 106‧‧‧Second conductive layer [66]107a, 107b‧‧‧electrode or bonding pad [67]120‧‧‧Protective layer [68]122‧‧‧First dielectric layer [69]140, 240‧ ‧Second dielectric layer [70] 222a, 222b, 222c, 240a, 240b, 240c, 280‧‧ dielectric layer [71] 160, 260a, 260b, 260c, 162, 262a, 262b, 262c‧ ‧ metal Layer [72] 20, 30, 32, 32'‧‧‧ illuminating element array [73] 21‧‧‧ substrate [74] 22‧‧‧ tin material [75] 13, 23‧‧‧ circuit carrier board [76 】24‧‧‧Transparent encapsulation material [77]25‧‧‧Light-emitting device package [78]10, 10a, 10b, 10c, 20a, 20b, 20c, 300, 300a, 300b, 300c, 300d, 300a', 300b' , 300c', 300d'‧‧ ‧ illuminating elements [79] 102a ‧ ‧ surface [80] 101 ‧ ‧ luminous stacking [81] 221 ‧ ‧ reflective layer [82] 260, 260' ‧ ‧ first Metal layer [83] 262, 262'‧‧‧ second metal [84] 290‧‧‧ opaque layer [86] 22a‧‧‧ Conductive channel [87] 294‧‧‧ first wavelength conversion layer [88] 296‧‧‧ second wavelength conversion layer [89] 35, 36 , 36', 65, 66, 37‧‧‧ red, green and blue light-emitting element units [90] S1, S6'‧‧‧ first width [91] S2‧‧‧ first length [92] d1, d1'‧‧ ‧Second width [93]d2‧‧‧Second length [94]S3, S3'‧‧‧First distance [95]S4‧‧‧Second distance [96]S5‧‧‧ Third distance [97] 298‧‧‧wavelength conversion layer [98]S1‧‧‧first length [99]S6‧‧‧first width [100]680‧‧‧filling material [101]76‧‧‧ display module [102]73 ‧‧‧Second circuit carrier [103]72‧‧‧Circuit [104]78‧‧‧Lighting module [105]80‧‧‧Light bulb [106]82‧‧‧ Optical lens [107]85‧‧‧ Heat sink [108]87‧‧‧Connecting Department [109]88‧‧‧Electrical connector

[8] FIG. 1A to FIG. 1D are schematic diagrams showing a method for fabricating a light-emitting diode according to an embodiment of the present invention; [9] FIG. 1E is a schematic diagram of application of a light-emitting diode according to an embodiment of the present invention; 2A to 2D are schematic diagrams showing a method for fabricating an LED array according to an embodiment of the invention; [11] FIG. 2E is a diagram of an LED array and a circuit board according to an embodiment of the invention. FIG. 2F is a schematic diagram of a package of a light emitting diode array according to an embodiment of the present invention; [13] FIGS. 3A to 3G are flowcharts showing a method for fabricating a light emitting device according to an embodiment of the present invention. A cross-sectional view corresponding to the stage; [14] FIG. 4A is a plan view of the light-emitting element array as shown in FIG. 3F connected to the circuit carrier in a flip chip form; [15] FIG. 4B is a diagram in accordance with the present invention. A grain-level red, green and blue light-emitting element unit comprises a top view of a red-green-blue light-emitting element group as shown in FIG. 3G; [16] FIG. 5A is a light-emitting element array in accordance with an embodiment of the present invention for flip chip Form connected to the circuit board FIG. 5B is a plan view of a light-emitting element unit of a grain level of a single light-emitting element according to an embodiment of the present invention; [18] FIG. 5C is a crystal of a single light-emitting element according to an embodiment of the present invention. A cross-sectional view of a light-emitting element unit of a granular level; [19] FIG. 5D is a plan view of a light-emitting element unit of a grain level of a single light-emitting element according to an embodiment of the present invention; [20] FIG. 5E is a diagram in accordance with the present invention. FIG. 6A is a cross-sectional view of a grain-level red, green and blue light-emitting element unit according to an embodiment of the invention [22] FIG. 6B A schematic diagram of a single light-emitting element in the array of light-emitting elements shown in FIG. 6A; [23] FIG. 6C is a schematic diagram of a single light-emitting element in an array of light-emitting elements according to an embodiment of the invention; [24] 7A to 7G are cross-sectional views corresponding to various stages of the manufacturing method of a light-emitting device according to an embodiment of the present invention; [25] FIG. 7H is a red, green and blue grain level according to an embodiment of the present invention. hair The optical element unit includes a top view of a group of red, green and blue light-emitting elements as shown in FIG. 7G; [26] FIG. 7I is a cross-sectional view of a light-emitting element unit of a grain level of a single light-emitting element according to an embodiment of the present invention; 27] FIG. 7J is a plan view of a light-emitting element unit of a grain level of a single light-emitting element according to an embodiment of the present invention; [28] FIG. 8A is a schematic view of a display module according to an embodiment of the present invention; [29] Figure 8B is a schematic view of a display module in accordance with an embodiment of the present invention; and [30] Figure 9 is an exploded view of a light bulb component in accordance with an embodiment of the present invention.

32‧‧‧Lighting element array

300a, 300b, 300c‧‧‧Lighting elements

102a‧‧‧ surface

240a‧‧‧ dielectric layer

290‧‧‧ opaque layer

294‧‧‧First wavelength conversion layer

296‧‧‧second wavelength conversion layer

23‧‧‧Circuit carrier board

22a‧‧‧ conductive path

22‧‧‧Metal contact

102‧‧‧First conductive layer

24‧‧‧Transparent packaging materials

Claims (20)

A method of fabricating a light-emitting device, comprising the steps of: providing a first carrier having a plurality of first metal contacts; providing a substrate; forming a plurality of light-emitting layers and a plurality of grooves on the substrate, wherein the light-emitting stack The layers are separated from each other by the trenches; the light emitting laminates are connected to the first carrier; a packaging material is formed on the light emitting laminates; and the first carrier and the packaging material are cut A plurality of light-emitting element units of a plurality of grain levels are formed. The method of claim 1, further comprising removing the substrate prior to forming the encapsulating material. The method of claim 1, further comprising forming a plurality of metal layers on the light-emitting stack to be in contact with the first metal. The method of claim 1, further comprising forming an opaque layer in the trenches and surrounding the light emitting stacks to avoid mutual influence or crosstalk of light emitted by adjacent light emitting stacks. . The method of claim 1, further comprising forming a first wavelength conversion layer on a first light-emitting layer, the first wavelength conversion layer converting the light emitted by the first light-emitting layer into a first light Wherein the first luminescent laminate is one of the luminescent laminates. The method of claim 5, further comprising forming a second wavelength conversion layer on a second light-emitting layer, the second wavelength conversion layer converting the light emitted by the second light-emitting layer into a second light Wherein the second light emitting laminate is one of the light emitting laminates. The method of claim 6, wherein the light-emitting laminate comprises a third light-emitting layer, the wavelength-free material is not above the third light-emitting layer, wherein the first light-emitting layer, the second layer The light emitted by the light-emitting layer and the third light-emitting layer is blue light, the first light is green light and the second light is red light. The method of claim 1, further comprising forming an opaque layer in the trenches, wherein the encapsulating material is over the trenches and the opaque layer. The method of claim 6 further comprising forming a dielectric layer in the trenches between the opaque layer and the luminescent stacks. The method of claim 3, further comprising patterning the metal layers such that the surfaces of the metal layers form a roughened surface. The method of claim 1, after the connecting the light-emitting laminate and the first carrier, further comprising removing the substrate to expose an exposed surface of the light-emitting laminates and including roughening the same The exposed surface of the luminescent stack. The method of claim 1, further comprising forming a reflective layer between the light emitting stacks and the first carrier. The method of claim 1, before the connecting the light-emitting laminates to the first metal of the first carrier, further comprising forming a filling material, wherein the filling material is substantially formed in the first Above the surface of one of the plates. The method of claim 13, wherein the filling material is electrically conductive, and the light emitting laminates are electrically connected to the first carrier by the filling material. The method of claim 1, wherein the first metal contacts extend from a top surface of the first carrier to a bottom surface of the first carrier. The method of claim 1, further comprising providing a second carrier having a plurality of second metal contacts, and contacting the light-emitting component units connecting the die levels with the second metal of the second carrier . The method of claim 1, wherein the light-emitting laminates are separated from one another by a pitch of less than 25 microns. The method of claim 1, wherein one of the grain level light emitting element units has an area of less than 0.36 square millimeters (mm ² ). The method of claim 1, wherein one of the light-emitting element units of the grain level comprises a single light-emitting stack, and an area of the area of the light-emitting element unit of the grain level is proportional to an area of the single light-emitting layer Is equal to or greater than 9. The method of claim 1, wherein one of the light-emitting element units of the grain level comprises a plurality of light-emitting laminates, and an area of the light-emitting element units of the grain level and a total area of the light-emitting laminates The ratio is less than 2.