TWI706579B - Light emitting apparatus and manufacturing method thereof - Google Patents

Abstract

The present disclosure provides a light-emitting apparatus, comprising a light emitting structure, the light emitting structure comprising a first conductive layer, an active layer, and a second conductive layer, the active layer being disposed on the first conductive layer and being a light emitting layer, the second conductive layer being disposed on the active layer; a first metal layer, the first metal layer being disposed on the light emitting structure and electrically-connected to the first conductive layer; and a second metal layer, the second metal layer being disposed on the light emitting structure and electrically-connected to the second conductive layer; wherein the first metal layer or the second metal layer has a rough surface, and the rough surface has a surface roughness between 0.5 and 5 microns.

Description

Light emitting device and manufacturing method thereof

The present invention relates to a light-emitting element and a manufacturing method thereof, a light-emitting element array and a manufacturing method thereof, and particularly a light-emitting device and a manufacturing method thereof.

The conventional light-emitting diode (LED) packaging technology is to dispense glue on a sub-mount, and then fix the light-emitting diode chip on the chip base to form a light-emitting diode element. This step is called It is Die Bonding. The bonding material is mainly conductive silver glue or other non-conductive epoxy resin. Then the light-emitting diode components are assembled on the circuit board. The flip chip type light emitting diode system exposes the p-type semiconductor conductive layer and the n-type semiconductor conductive layer in the diode structure to the same side, so that the cathode and anode electrodes can be fabricated in the diode structure. On the same side, the light-emitting diode structure with cathode and anode electrodes can be directly covered on a solder. In this way, the need for traditional metal wire bonding can be eliminated. However, the conventional flip-chip light-emitting diodes still need packaging steps such as cutting and die bonding before they can be connected to the circuit board. Therefore, if the electrode of the flip-chip light emitting diode has a sufficiently large contact area, the conventional packaging step can be omitted.

Generally, the operating current of traditional LEDs is about tens to hundreds of milliamps (mA), but the brightness is often not enough to meet the needs of general lighting. If a large number of LEDs are combined to increase the brightness, the volume of the LED lighting element will increase and the competitiveness in the market will decrease. Therefore, it is an inevitable trend to increase the brightness of a single LED's die. However, when LEDs develop towards high brightness, the operating current and power of a single LED increases from several to hundreds of times that of traditional LEDs. For example, the operating current of a high-brightness LED is about hundreds of milliamps to several amperes. Makes the heat problem that LED produces cannot be ignored. The performance of LEDs will be reduced due to "heat". For example, thermal effects will affect the light-emitting wavelength of LEDs, and semiconductor characteristics will also cause brightness degradation due to heat, and even more serious damage to components. Therefore, how to dissipate heat from high-power LEDs has become an important issue for LEDs.

US Patent Application Nos. 2004/0188696 and 2004/023189 (partitions of 2004/0188696) respectively disclose an LED packaging structure and method using Surface Mount Technology (SMT), wherein each packaging structure contains a LED chip. Each LED chip is first in the form of flip-chip, and is adhered on the front side of a sub-mount by bonding bumps. The wafer holder has an array of holes drilled in advance, and is filled with metal to form a via array. The electrodes of the chip can be connected to the back side of the chip holder with tin material through the channel array. This channel array can also be used as a heat dissipation path for LED chips. After each LED chip is adhered to the sub-substrate, the sub-substrate is cut to perform subsequent LED packaging.

However, in the wafer holders in US Patent Application Nos. 2004/0188696 and 2004/023189, a via array filled with metal needs to be drilled out, which increases the manufacturing cost. In addition, the step of adhering each LED chip to the chip holder will increase the manufacturing complexity. Therefore, if a light-emitting diode can be provided, no chip holder is required, and a good heat dissipation path can be provided, which can have an advantage in the market.

The present invention discloses a method for manufacturing a light-emitting device, which includes the steps of: providing a first carrier with a plurality of first metal contacts; providing a substrate; forming a plurality of light-emitting stacks and a plurality of grooves on the substrate, wherein The light-emitting laminates are separated from each other by a plurality of grooves; the light-emitting laminates and the first carrier are connected; an encapsulation material is formed on the plurality of luminous laminates; and the first carrier and the encapsulation material are cut to form a plurality of dies Class light-emitting element unit.

In an embodiment of the present invention, the manufacturing method of the light-emitting device further includes forming a first wavelength conversion layer on a first light-emitting stack. The first wavelength conversion layer converts the light emitted by the first light-emitting stack into a first A light; forming a second wavelength conversion layer on a second light-emitting stack, the second wavelength conversion layer converts the light emitted by the second light-emitting stack into a second light; and providing a third light-emitting stack, first There is no wavelength conversion material above the three-light-emitting stack, where the light from the first, second, and third light-emitting stacks is blue, the first light is green and the second light is red Light.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings. In the diagram, the shape or thickness of the element can be expanded or reduced. It should be noted that the components not shown or described in the figure may be in the form known to those who are familiar with the art. The embodiments listed in the present invention are only used to illustrate the present invention, but not to limit the scope of the present invention. Any obvious modification or change made by anyone to the present invention does not depart from the spirit and scope of the present invention.

Referring to FIGS. 1A to 1E, which are cross-sectional views corresponding to each stage of a manufacturing method of a light emitting device according to an embodiment of the present invention. In Figure 1A, a light-emitting structure 100 is first formed, which includes a substrate 11, a first conductive layer 102 as a coating layer, and an active layer 104 on the first conductive layer 102 as a light-emitting layer A second conductive layer 106 is on the active layer 104 as another coating layer. Preferably, as shown in FIG. 1A, one electrode or bonding pad 107a is located on the exposed portion of the first conductive layer 102, and the other electrode or bonding pad 107b is located on the second conductive layer 106. The material (such as aluminum) and manufacturing method of the electrodes or bonding pads 107a and 107b should be familiar to those skilled in the art, and will not be repeated here. In addition, in one embodiment, the light-emitting structure 100 further includes a passivation layer 120 to protect the light-emitting structure 100. The material (such as silicon dioxide) and the manufacturing method of the protective layer 120 are also well known to those skilled in the art, and will not be repeated here.

In one embodiment, the first conductive layer 102 is an n-type semiconductor conductive layer, and the second conductive layer 106 is a p-type semiconductor conductive layer. The n-type semiconductor conductive layer 102 and the p-type semiconductor conductive layer 106 are any conventional or future semiconductor materials, preferably III-V (three/five) group compound semiconductors, such as aluminum gallium indium nitride (Al _x Ga _y ln _{(1 －x－y)} N) or aluminum gallium indium phosphide (Al _x Ga _y In _(1-xy) P), where 0≦x≦1, 0≦y≦1, 0≦x＋y≦ 1, and optionally further doped with p/n type dopants. The active layer 104 can also use conventional semiconductor materials and structures. For example, the material can be aluminum gallium indium nitride (Al _x Ga _y ln _{(1- x-y)} N) or aluminum gallium indium phosphide (Al _x Ga _y ln). _{(1- x-y)} P), etc., and the structure can be Single Quantum Well (SQW), Multiple Quantum Well (MQW) and Double Heterosture (DH). The mechanism is a known technology, so I won’t repeat it here. In addition, the light-emitting structure 100 can be formed by a metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) process, or a hydride vapor phase epitaxy (HVPE) process, etc. Make.

Next, as shown in FIG. 1B, a first dielectric layer 122 is formed on the light-emitting structure 100. Preferably, the first dielectric layer 122 is a transparent dielectric layer with a thickness D≦20 μm, so as to effectively conduct the heat generated by the light emitting structure 100. The material of the first dielectric layer 122 can be silicon dioxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), or a combination thereof, and it can be fabricated by MOCVD or MBE.

Thereafter, referring to FIG. 1C, a second dielectric layer 140 is formed on the first dielectric layer 122. The material of the second dielectric layer 140 can be one of silicon dioxide, silicon nitride, polyimide, BCB (bisbenzocyclobutene), and photoresist. Preferably, the thickness of the second dielectric layer 140 is about 25 μm and is formed by a printing technique.

Referring to FIG. 1D, after the second dielectric layer 140 is formed, a metal layer 160 is formed. The metal layer 160 is located on the light emitting structure 100 and electrically contacts the first conductive layer 102, and a part of the metal layer 160 is located on the first dielectric layer. 122; and a metal layer 162 is formed. The metal layer 162 is located on the light emitting structure 100 and electrically contacts the second conductive layer 106, and part of the metal layer 162 is located on the first dielectric layer 122. The first dielectric layer 122 and the second dielectric layer 140 isolate the metal layer 160 and the metal layer 162. The material of the metal layer 160 or the metal layer 162 may be selected from gold (Au), aluminum (Al), silver (Ag), alloys thereof, or other conventional metals. Preferably, the metal layer 160 and the metal layer 162 are jointly formed by a printing technique or electroplating. Through the above steps, the light-emitting element 10 is completed.

In one embodiment, the first dielectric layer 122 is a transparent dielectric layer, and the contact surface between the first dielectric layer 122 and the metal layer 160 and/or the metal layer 162 is for reflecting the light emitted by the light emitting structure 100, so that it can Effectively enhance the light output intensity of the light-emitting element 10. In addition, the metal layer 160 and/or the metal layer 162 also serve as a heat dissipation path for the light emitting structure 100. When the metal layer 160 and the metal layer 162 have larger contact areas A1, A2, it also helps to efficiently and quickly dissipate heat.

Referring to FIG. 1E, after the structure as shown in FIG. 1D is formed, the manufacturing method of the light-emitting device further includes a step of removing the substrate 11, thereby exposing the first conductive layer 102. The substrate 11 can be, for example, a sapphire substrate or a gallium arsenide substrate. When the substrate 11 is a sapphire substrate, the substrate 11 can be removed by an excimer laser. The excimer laser can be a krypton fluoride (KrF) standard with an energy of 400 millijoules/cm2 (mJ/cm ² ), a wavelength of 248 nanometers, and a pulse width of 38 nanoseconds (ns). Molecular laser. At a higher temperature, such as 60° C., when the excimer laser irradiates the sapphire substrate, the sapphire substrate is removed to expose the first conductive layer 102. In addition, when the substrate 11 is a gallium arsenide substrate, a solution of ammonia (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) in a ratio of 1:35 or phosphoric acid in a ratio of 5:3:5 A solution of (H ₃ PO ₄ ), hydrogen peroxide (H ₂ O ₂ ) and water can be used to remove the gallium arsenide substrate, thereby exposing the first conductive layer 102.

After the substrate 11 is removed, the manufacturing method of the light-emitting element further includes roughening the surface 102 a of the first conductive layer 102. For example, when the first conductive layer 102 is an aluminum gallium indium nitride (Al _x Ga _y ln _{(1- x-y)} N) layer, the surface 102a can be roughened by an etching solution, which may be, for example, hydroxide Potassium (KOH) solution. In addition, when the first conductive layer 102 is an aluminum gallium indium phosphide (Al _x Ga _y In _(1-xy) P) layer, a solution of hydrochloric acid (HCl) and phosphoric acid can be used to roughen the surface of the first conductive layer 102 102a, the roughening time may be, for example, 15 seconds. The roughened surface 102a of the first conductive layer 102 can reduce the possibility of total reflection, thereby increasing the light extraction efficiency of the light emitting element.

The light-emitting element 10 shown in Figure 1E and the light-emitting elements 10a, 10b, and 10c shown in Figure 1D provide a sufficiently large contact area (preferably occupying at least half of the cross-sectional area of the light-emitting element 10), and the light-emitting elements 10a, 10b, The 10c system uses the solder 12 to directly connect to the circuit carrier 13 without the need for processes such as die bonding and wire bonding. In one embodiment, the light-emitting element 10a emits red light (R), the light-emitting element 10b emits green light (G), and the light-emitting element 10c emits blue light (B). The three are respectively connected to the circuit board 13 for image display purposes. .

Referring to FIG. 2A to FIG. 2D, it is a cross-sectional view corresponding to each stage of a manufacturing method of a light-emitting device array according to an embodiment of the present invention. In Figure 2A, a substrate 21 is first provided, such as a sapphire (Sapphire) substrate, a gallium arsenide (GaAs) substrate, or a combination of other substrates known to those skilled in the art. Next, a plurality of light-emitting structures 200a, 200b, and 200c are formed on the substrate 21. The materials and manufacturing methods of the light-emitting structures 200a, 200b, and 200c can refer to the light-emitting structure 100 in FIGS. 1A to 1D. Similarly, the light-emitting structures 200a, 200b, and 200c can be formed by a metal-organic chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, or a hydride vapor phase epitaxy (hydride vapor deposition) process. phase epitaxy, HVPE) manufacturing process.

Next, as shown in FIG. 2B, a dielectric layer 222a is formed on the light emitting structure 200a, a dielectric layer 222b is formed on the light emitting structure 200b, and a dielectric layer 222c is formed on the light emitting structure 200c. Preferably, like the dielectric layer 122 shown in FIG. 1B, the dielectric layers 222a, 222b, and 222c are a transparent dielectric layer with a thickness D≦20μm, thereby effectively conducting the light-emitting structures 200a, 200b, 200c The heat generated. The material of the dielectric layer 222a, 222b, 222c can be silicon dioxide, silicon nitride or a combination thereof, and it can be made by MOCVD or MBE.

After that, referring to FIG. 2C, a dielectric layer 240a is formed on the dielectric layer 222a, a dielectric layer 240b is formed on the dielectric layer 222b, and a dielectric layer 240c is formed on the dielectric layer 222c. The material of the dielectric layers 240a, 240b, 240c can be selected from among silicon dioxide, silicon nitride, polyimide, BCB (bisbenzocyclobutene), and photoresist. Preferably, like the second dielectric layer 140 shown in FIG. 1C, the thickness of the dielectric layers 240a, 240b, and 240c is about 25 μm, respectively, and is formed by a printing technique. In one embodiment, a dielectric layer 280 is further formed between the light emitting structures 200a, 200b, and 200c to electrically insulate the light emitting elements 20a, 20b, and 20c (as shown in FIG. 2D). In this embodiment, the material of the dielectric layer 280 is the same as the material of the dielectric layers 240a, 240b, 240c, such as polyimide, and a process (such as a printing technique) is used with the dielectric layers 240a, 240b, 240c Form together. In another embodiment, the material of the dielectric layer 280 is different from the material of the dielectric layers 240a, 240b, 240c, and is formed by different processes.

Referring to FIG. 2D, metal layers 260a, 260b, and 260c are formed; and metal layers 262a, 262b, and 262c are formed. The material of the metal layers 260a, 260b, 260c, 262a, 262b, and 262c can be selected from gold (Au), aluminum (Al), silver (Ag) or alloys thereof. Preferably, the metal layers 260a, 260b, 260c, 262a, 262b, and 262c are jointly formed by a printing technique or electroplating. Through the above steps, the light emitting element array 20 having the light emitting elements 20a, 20b, and 20c is completed.

As shown in FIGS. 2E to 2F, in one embodiment, the light-emitting elements 20a, 20b, and 20c provide a large enough contact area to directly connect with the circuit carrier 23 by using a solder 22. Then the substrate 21 is separated from the light-emitting element array 20, and the light-emitting element array 20 can be used for image display. For example, after using the tin material 22 to directly connect the light-emitting elements 20a, 20b, and 20c to the circuit carrier 23, the method for manufacturing the light-emitting element further includes a step of removing the substrate 21. The substrate 11 may be, for example, a sapphire substrate and can be removed by an excimer laser. The excimer laser can be a krypton fluoride (KrF) standard with an energy of 400 millijoules/cm2 (mJ/cm ² ), a wavelength of 248 nanometers, and a pulse width of 38 nanoseconds (ns). Molecular laser. At a higher temperature, such as 60° C., when the excimer laser irradiates the sapphire substrate, the sapphire substrate is removed to expose the first conductive layer 102. In addition, when the substrate 11 is a gallium arsenide substrate, a solution of ammonia (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) in a ratio of 1:35 or phosphoric acid in a ratio of 5:3:5 A solution of (H ₃ PO ₄ ), hydrogen peroxide (H ₂ O ₂ ) and water can be used to remove the gallium arsenide substrate, thereby exposing the first conductive layer 102.

After the substrate 21 is removed, the manufacturing method of the light-emitting device further includes roughening the surface 102 a of the first conductive layer 102. For example, when the first conductive layer 102 is an aluminum gallium indium nitride (Al _x Ga _y ln _{(1- x-y)} N) layer, the surface 102a can be roughened by an etching solution, which may be, for example, hydroxide Potassium (KOH) solution. In addition, when the first conductive layer 102 is an aluminum gallium indium phosphide (Al _x Ga _y In _1-xy P) layer, a solution of hydrochloric acid (HCl) and phosphoric acid can be used to roughen the surface 102a of the first conductive layer 102, The coarsening time can be, for example, 15 seconds. The roughened surface 102a of the first conductive layer 102 can reduce the possibility of total reflection, thereby increasing the light extraction efficiency of the light emitting element. In one embodiment, as shown in Figure 2G, a transparent packaging material 24 is used to cover the light-emitting element array 20 including the light-emitting elements 20a, 20b, and 20c and connect to the circuit carrier 23 to form a light-emitting element package 25. The transparent packaging material 24 can be, for example, epoxy resin or other suitable materials known to those skilled in the art.

Referring to FIG. 3A to FIG. 3G, it is a cross-sectional view corresponding to each stage of a manufacturing method of a light-emitting device according to an embodiment of the present invention. Referring to Figure 3A, a substrate 21 is provided, which is single crystal and contains sapphire, gallium arsenide, gallium nitride or silicon; epitaxially grows a first conductive layer 102 on the substrate 21, the first conductive layer 102 is As a cladding layer; epitaxial growth an active layer 104 including a multiple quantum well (MQW) structure on the first conductive layer 102, wherein the active layer 104 serves as a light-emitting layer; and epitaxial growth an The second conductive layer 106 is on the active layer 104, wherein the second conductive layer 106 is used as another coating layer. Then, the first conductive layer 102, the active layer 104, and the second conductive layer 106 are etched to form a plurality of light-emitting stacks 101 separated from each other by trenches (not shown) on the substrate 21, and each light-emitting stack In 101, a part of the first conductive layer 102 is exposed. Then, a protective layer 120 is formed on each light-emitting stack 101, and the protective layer 120 covers a part of the first conductive layer 102, a part of the second conductive layer 106 and a sidewall of the light-emitting stack 101. Next, an electrode or bonding pad 107a electrically connected to the first conductive layer 102 is disposed on the exposed portion of each first conductive layer 102, and a second conductive layer is disposed on each second conductive layer 106 106 is an electrode or bonding pad 107b that is electrically connected.

After that, referring to FIG. 3B, a reflective layer 221 is disposed on each protective layer 120, and a first dielectric layer 122 covering the reflective layer 221 is formed on each protective layer 120. For the light emitted from the light-emitting stack 101, the reflective layer 221 has a reflectivity equal to or greater than 80%. The material of the reflective layer 221 includes metal, such as silver, silver alloy, aluminum, or aluminum alloy. In one embodiment, the material of the reflective layer 221 includes a polymer mixed with inorganic particles, where the inorganic particles are composed of metal oxide or a material with a reflectivity equal to or greater than 1.8. The material of the reflective layer 221 is, for example, Epoxy resin mixed with titanium oxide particles. Each reflective layer 221 is completely covered by the corresponding protective layer 120 and the first dielectric layer 122, thereby electrically insulating each reflective layer 221 from the corresponding light-emitting stack 101. In another embodiment, the protective layer 120 is omitted, and the reflective layer 221 is directly formed on the second conductive layer 106 and is electrically connected to the second conductive layer 106. After that, as shown in FIG. 3C, a second dielectric layer 240 is formed on the substrate 21 and between the trenches and on each light-emitting stack 101, and each second dielectric layer 240 exposes its corresponding electrode Or bonding pad 107a and electrode or bonding pad 107b. After that, a first metal layer 260 and a second metal layer 262 are formed between each second dielectric layer 240 and on a part of the corresponding first dielectric layer 122. The first metal layer 260 and the second metal layer 262 are formed on the corresponding electrode or bonding pad 107a and the electrode or bonding pad 107b, respectively. The materials of the first metal layer 260 and the second metal layer 262 include gold, aluminum, silver or alloys thereof. In one embodiment, the first metal layer 260 and the second metal layer 262 are jointly formed by a printing technique or electroplating.

As shown in FIG. 3D, the second dielectric layer 240 located between adjacent light-emitting stacks 101 is patterned to form a groove in the second dielectric layer 240. The groove exposes a part of the substrate 21 and removes the second dielectric layer. The dielectric layer 240 is separated to form a dielectric layer 240a, and then an opaque layer 290 is formed in the groove. In one embodiment, the opaque layer 290 serves as a reflective layer or a light absorbing layer, so as to reflect or absorb the light emitted by the corresponding light-emitting stack 101 and avoid being affected by the light emitted by the adjacent light-emitting stack 101 Or produce crosstalk (crosstalk). For the light emitted by the corresponding light-emitting stack 101, the opaque layer 290 has a transmittance of less than 50%. The material of the opaque layer 290 includes metal or a polymer mixed with inorganic particles. The inorganic particles are composed of metal oxides or materials with reflectivity equal to or greater than 1.8. The material of the reflective layer 221 is, for example, Epoxy resin mixed with titanium oxide particles. So far, the light-emitting element array 30 including the plurality of light-emitting elements 300 is completed. As shown in FIG. 3E, a circuit carrier 23 is provided, which includes a plurality of metal contacts 22 located on the upper and lower surfaces of the circuit carrier 23 and includes a plurality of conductive channels 22a penetrating the circuit carrier 23, wherein the conductive channels 22a can connect the metal contact 22 on the upper surface of the circuit carrier and the metal contact 22 on the lower surface of the circuit carrier. In one embodiment, the circuit carrier 23 includes solder. The circuit carrier 23 includes FR-4, BT (Bismaleimide-Triazine) resin, ceramic, or glass. The thickness of the circuit carrier 23 is between 50 and 200 microns to sufficiently support the light emitting element and still have a small volume. The light emitting element array 30 is directly connected to the circuit carrier 23 in the form of flip chip by aligning the first metal layer 260 and the second metal layer 262 of each light emitting element 300 to the corresponding metal contact 22. It is worth noting that a gap may be formed in the area outside the metal contact 22 between the light-emitting element array 30 and the circuit carrier 23. In addition, the voids can be optionally filled with filler materials to improve the connection strength and mechanical support. After connecting the light-emitting element array 30 and the circuit carrier 23, the substrate 21 of the light-emitting element array 30 is removed. In one embodiment, the substrate includes sapphire, the light-emitting stack 101 includes gallium nitride, and the method of removing the substrate 21 includes a higher temperature, such as 60°C, using an excimer laser to irradiate the first The interface between the conductive layer 102 and the substrate 21 is then separated from the substrate 21 and the first conductive layer 102. The excimer laser can be a krypton fluoride (KrF) standard with an energy of 400 millijoules/cm2 (mJ/cm ² ), a wavelength of 248 nanometers, and a pulse width of 38 nanoseconds (ns). Molecular laser. In another embodiment, when the substrate 21 is a gallium arsenide substrate, the method of removing the substrate 21 includes using a ratio of 1:35 ammonia (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) A mixture of phosphoric acid (H ₃ PO ₄ ), hydrogen peroxide (H ₂ O ₂ ) and water in a ratio of 5:3:5 to be etched until the substrate 21 can be completely removed and exposed The first conductive layer 102, the dielectric layer 240a, and the opaque layer 290 of the light emitting element 300.

As shown in FIG. 3F, after removing the substrate 21, the manufacturing method of the light emitting device further includes roughening the exposed surface of the first conductive layer 102. In one embodiment, the first conductive layer 102 includes aluminum gallium indium nitride (Al _x Ga _y ln _{(1- x-y)} N, where 0≦x, y≦0), and potassium hydroxide (KOH) can be used. The solution etches the exposed surface of the first conductive layer 102 to form a roughened surface 102a. In another embodiment, the first conductive layer 102 includes aluminum gallium indium phosphide (Al _x Ga _y In _{(1- x-y)} P), and a solution of hydrochloric acid (HCl) or phosphoric acid can be used to etch the first conductive layer The exposed surface 102 forms a roughened surface 102a, and the roughening time may be, for example, 15 seconds. The roughened surface 102a of each first conductive layer 102 can reduce the possibility of total reflection of light in each light-emitting element 300, thereby increasing the light extraction efficiency of the light-emitting element. After the roughening step, the plurality of recessed regions are located on the roughened surface 102a and are substantially surrounded by the dielectric layer 240a. In one embodiment, in order to form a die-level red, green, and blue light emitting element unit for a display, the manufacturing method of this embodiment can selectively coat a first wavelength conversion layer 294 on the light emitting element 300b to convert Light, as shown in Figure 3F. For example, the light-emitting stack 101 of the light-emitting element 300b emits blue light whose main wavelength is between 430 nanometers and 470 nanometers and is converted into first converted light, for example, a light with a main wavelength between 610 nanometers and Red light between 690nm. Further, a second wavelength conversion layer 296 can be selectively coated on the light-emitting element 300c to convert the light emitted by the light-emitting element 300c into a second converted light, for example, a wavelength with a main wavelength ranging from 500 nm to Green light between 570nm. The light emitting element 300a is not coated with any wavelength conversion material, so as to directly emit blue light from the roughened surface 102a of the light emitting element 300a. In one embodiment, the first or second wavelength conversion layer is formed by aggregating nano-scale quantum dots or nano-scale phosphors to form a film with a substantially uniform thickness, and by a The bonding layer (not shown) is connected to the light-emitting stack 101. In another embodiment, the first or second wavelength conversion layer includes nano-scale quantum dots or nano-scale phosphors, and the average diameter or average characteristic length is between 10 nanometers and 500 nanometers. between. The length or characteristic length of each nanometer quantum dot or nanometer phosphor is substantially less than 1000 nanometers. Nano-scale quantum dots include semiconductor materials, such as a II-VI (two/six) compound semiconductor with a composition of Zn _x Cd _y Mg _lxy Se, where x and y can be adjusted to make II-VI (two/ 6) Group compound semiconductor emits green or red light after being excited by light. "Characteristic length" is defined as the maximum distance between any two ends of a phosphor or a quantum dot. Afterwards, a transparent packaging material 24 such as epoxy resin or silicone is coated on the upper surface of the light-emitting element array 32 to fix the wavelength conversion material on the light-emitting stack 101 and serve as the light-emitting element array 32 Optical lenses of light-emitting elements 300a, 300b, and 300c. In another embodiment, the materials of the wavelength conversion layer covering the light-emitting elements 300a, 300b, and 300c are the same.

FIG. 4A is a top view of the light emitting device array 32 connected to the circuit carrier 23 in the form of flip chip as shown in FIG. 3F. Both the light-emitting element array 32 and the circuit carrier 23 are in the form of wafers having the same or similar dimensions. The light emitting element array 32 includes a plurality of red, green, and blue light emitting element groups interlaced and continuously arranged in a two-dimensional space, and as shown by the dotted circle in the figure, each group includes a light emitting element 300a and a light emitting element 300b. And a light emitting element 300c.

Finally, perform a dicing step to simultaneously cut the light-emitting element array 32 and the circuit carrier 23 to form a plurality of die-level red, green and blue light-emitting element units 35 as shown in FIG. 3G, and each die-level red, green, and blue light-emitting element units 35 The light emitting element unit 35 includes a blue light emitting element 300a emitting blue light, a red light emitting element 300b emitting red light, and a green light emitting element 300c emitting green light. The die-level red, green, and blue light-emitting element unit 35 is a surface-mount device without packaging, that is, after the cutting step, it can be directly bonded to a printed circuit carrier without the need for a traditional packaging step . The transparent packaging material 24 collectively covers the light emitting elements 300a, 300b, and 300 and does not extend to the sidewalls of the light emitting elements 300a, 300b, and 300c. In one embodiment, the dicing step simultaneously cuts the light-emitting element array 32 and the circuit carrier 23 to form a plurality of die-level red, green and blue light-emitting element units, wherein each die-level red, green, and blue light-emitting element unit includes a plurality of Red, green and blue light-emitting element group. The multiple red, green, and blue light-emitting element groups are arranged in an I*J array in a red, green, and blue light-emitting element unit, where I and J are positive integers, and at least one of I and J is greater than one. The ratio of I to J is preferably close to or equal to 1/1, 3/2, 4/3 or 16/9.

Referring to FIG. 4B, the red, green and blue light emitting element unit 35 at the die level includes the red, green and blue light emitting element groups as shown in FIG. 3G. The die-level red, green, and blue light-emitting element unit 35 is a first rectangle with a first long side and a first short side, wherein the first short side has a first width S1 and the first long side has a larger A first length S2 of a width S1. Each light-emitting stack 101 is a second rectangle with a second long side and a second short side, wherein the second short side has a second width d1 and the second long side has a second width d1 greater than the second width d1. Length d2. The second short side of the light-emitting stack 101 is substantially arranged parallel to the first long side of the red, green, and blue light-emitting element unit 35 at the die level or substantially perpendicular to the first long side of the red, green and blue light-emitting element unit 35 at the die level. The first short side. In one embodiment, the red, green, and blue light emitting element unit 35 can be used as a pixel of an indoor display panel. In order to make a TV display with a diagonal of 40 inches and a pixel resolution of 1024*768 all use light-emitting element pixels, the area of each pixel needs to be less than about 0.64 square millimeters (mm ² ). Therefore, the area of the red, green and blue light emitting element unit 35 may be, for example, less than 0.36 mm ² . The first length S2 and the first width S1 are both less than 0.6 mm, and the aspect ratio of the red, green and blue light emitting element unit 35, that is, S2/S1, is preferably less than 2/1. According to the disclosed embodiment of the present invention, the distance between the first metal layer 260 and the second metal layer 262, that is, the first distance S3, is limited by the alignment control of the light-emitting element array and the circuit carrier in the connection step . The first distance S3 is equal to or greater than 25 micrometers (micron) and less than 150 micrometers, so as to ensure the manufacturing process tolerance and provide sufficient contact area for conduction. The distance between one edge of the red, green and blue light emitting element unit 35 and one of the light emitting stacks 101 of the red, green and blue light emitting element unit 35, that is, the second distance S4, is limited by the tolerance of the cutting step. The second distance S4 is equal to or greater than 25 microns and less than 60 microns, so as to ensure the tolerance of the cutting step and maintain the advantages of small volume. The distance between two adjacent light-emitting elements, that is, the third distance S5 is limited by the photolithographic etching step, and is less than 50 microns, or preferably less than 25 microns, so that more light-emitting stacks 101 remain area. For each light-emitting stack 101 in the red-green-blue light-emitting element unit 35, the second width d1 is between 20 and 150 microns and the second length d2 is between 20 and 550 microns. The ratio of the area of the red, green and blue light emitting element unit 35 to the total area of the light emitting stack 101 is less than 2 or between 1.1 and 2, and preferably between 1.2 and 1.8. The area of the light-emitting stack 101 depends on the required brightness and pixel size. It is worth noting that the shape of the red, green, and blue light-emitting element units 35 can also be a square with all four sides the same as the first width S1. In one embodiment, a pixel includes two red, green, and blue light-emitting element units 35, one of which is used for normal operation, and the other is used for backup to prevent failure of the red, green and blue light-emitting element unit 35 for normal operation. The first width S1 is preferably less than 0.3 mm, so that the two red, green and blue light-emitting element units 35 are arranged in one pixel. The advantage of the present invention is that the light-emitting element can be used as a pixel element of a flat-screen TV, and the resolution can be increased to twice or four times the pixel resolution of 1024*768. In another embodiment, a red, green, and blue light-emitting element unit 35 includes two red, green, and blue light-emitting element groups, one of which is used for normal operation, and the other is used for standby to prevent normal operation. malfunction.

Referring to FIGS. 5A to 5C, it is a die-level light-emitting element unit according to an embodiment of the present invention. Its manufacturing method and structure are similar to the embodiments shown in FIGS. 3A to 3G and related disclosures. The difference is that before the cutting step, the light-emitting element array 34 includes a plurality of the same light-emitting elements 300d, as shown in FIG. 5A. Each light-emitting element 300d is coated with the same or different wavelength conversion layer 298. The wavelength conversion layer 298 is used to convert the light emitted by the light-emitting stack 101 of the corresponding light-emitting element 300d. For example, the main wavelength is between 430 nm and 470 nm. The blue light between nanometers is converted into yellow light, green light or converted light from light. Referring to FIG. 5B and FIG. 5C, it is a top view and a cross-sectional view of the light-emitting element unit 36 at the die level including a single light-emitting element after the cutting step. The size of the die-level light-emitting element unit 36 is similar to or the same as the size of the die-level red, green and blue light-emitting element unit 35 shown in FIG. 4B. The die-level light-emitting element unit 36 is a first rectangle having a first long side and a first short side, wherein the first long side has a first length S1, and the first short side has a first length smaller than the first length S1. A width S6. Each light-emitting stack 101 is a second rectangle with a second long side and a second short side, wherein the second short side has a second width d1 and the second long side has a second width d1 greater than the second width d1. Length d2. The second short side of the light-emitting stack 101 is substantially arranged parallel to the first short side of the red, green and blue light-emitting element unit 36 at the die level or substantially perpendicular to the first short side of the red, green and blue light-emitting element unit 36 at the die level. The first long side. In one embodiment, the red, green, and blue light-emitting element unit 36 is a part of the pixels used in an indoor display panel. The area of the red, green and blue light emitting element unit 36 may be, for example, less than 0.12 mm ² . The first length S1 and the first width S6 are both less than 0.2 mm, and the aspect ratio of the red, green and blue light emitting element unit 36, that is, S1/S6, is preferably less than 2/1. According to the present invention, the distance between the first metal layer 260 and the second metal layer 262, that is, the first distance S3, is limited by the alignment control of the light-emitting element array and the circuit carrier in the connection step. The first distance S3 is equal to or greater than 25 micrometers and less than 150 micrometers to ensure process tolerance and provide sufficient contact area for conduction. The distance between one edge of the red, green and blue light emitting element unit 36 and the light emitting stack 101, that is, the second distance S4, is limited by the tolerance of the cutting step. The second distance S4 is equal to or greater than 25 microns and less than 60 microns, so as to ensure the tolerance of the cutting step and maintain the advantages of small volume. For the light-emitting stack 101 in the red-green-blue light-emitting element unit 36 at the die level, the second width d1 is between 20 and 150 microns and the second length d2 is between 20 and 550 microns. The ratio of the area of the red, green, and blue light emitting element unit 36 at the grain level to the total area of the light emitting stack 101 is less than 2 or between 1.1 and 2, and preferably between 1.2 and 1.8. The area of the light-emitting stack 101 depends on the required brightness and pixel size. It should be noted that the shape of the red, green, and blue light-emitting element units 36 can also be a square with all four sides the same as the first width S6. Similarly, the shape of the light-emitting stack 101 can also be a square with all four sides the same as the second width d1. In one embodiment, a pixel includes at least three die-level red, green, and blue light emitting element units 36 to emit blue, red, and green light.

Referring to FIGS. 5D to 5E, it is a die-level light-emitting element unit according to an embodiment of the present invention. Its manufacturing method and structure are similar to the embodiments shown in FIGS. 5A to 5C and related disclosures. The difference is that the opaque layer 290 can be optionally omitted. The red, green and blue light-emitting element unit 36' is directly surface-adhered to a light board included in a lamp. The area of the light emitting stack 101 depends on the required brightness and the size of the light panel or lamp. For applications such as less than 0.3 watts of low power, the area of the light emitting element RGB unit 36 'of the light emitting stack 101 is based 100mil ² to 200mil ^2, for example, is interposed between the power in watts from 0.3 to 0.9 In terms of application, the area of the light-emitting stack 101 of the red, green and blue light-emitting element unit 36' is 201 mil ² to 900 mil ^2. For high power applications, such as higher than 0.9 watts, the red, green and blue light-emitting element unit 36 The area of the light-emitting stack 101 is greater than 900 mil ² . The dielectric layer 240a surrounding the light-emitting stack 101 can be used as a coupling lens for extracting light from the light-emitting element unit 36' at the die level. The ratio of the area of the light-emitting element unit 36' at the grain level to the area of the light-emitting stack 101 is equal to or greater than 9, and preferably equal to or greater than 15, so as to have better light extraction efficiency and light dispersion. In the present invention, the distance between the first metal layer 260 and the second metal layer 262, that is, the first distance S3', is limited by the alignment control of the light emitting element array and the circuit carrier in the connection step. The first distance S3' is equal to or greater than 25 micrometers and less than 150 micrometers, so as to ensure process tolerance and provide sufficient contact area for conduction. It is worth noting that the shape of the die-level light-emitting element unit 36' can also be a square with all four sides the same as the first width S6'. Similarly, the shape of the light-emitting stack 101 can also be a square with all four sides the same as the second width d1'. The first width S6' is the same as the second width d1' or three times greater than the second width d1'. Preferably, the first width S6' is the same as the second width d1' or is greater than the second width d1'. In order to make the light-emitting element unit 36' at the grain level have better light extraction efficiency. In an example, the dielectric layer has different thicknesses on the sidewalls of the light-emitting stack 101, so the first ratio (S6'/d1') of the first width S6' to the second width d1' is different from the first length S1 The second ratio of'to the second length d2'(S1'/d2') is to achieve a top view of the light-emitting element unit 36' at the grain level during operation, which has the characteristics of an asymmetric light field. In addition, the first ratio is at least twice the second ratio, or preferably four times the second ratio.

Referring to FIG. 6A, it is a cross-sectional view of a die-level red, green, and blue light-emitting element unit 65 according to an embodiment of the present invention, and its manufacturing method and structure are the same as those shown in FIGS. 3A to 3G and related The disclosure is similar, but the difference is that a filling material 680 fills the gap between the light-emitting element array 32' containing the light-emitting elements 300a', 300b', and 300c' and the circuit carrier 23, so as to improve the connection strength between the two And to provide a current path between the circuit carrier and the light-emitting element. The filling material 680 includes anisotropic conductive film (ACF), which has the function of conducting current in a vertical path between the light-emitting element array 32' and the circuit carrier 23 and between the light-emitting element array 32' and the circuit carrier 23 The ability to insulate current in a lateral path parallel to the light-emitting element array 32' or the circuit carrier. The filling material 680 is coated on the circuit carrier 23 before connecting the light-emitting element array to the circuit carrier 23. In one embodiment, neither the first metal layer 260' nor the second metal layer 262' contacts the metal contacts 22 of the circuit carrier 23. The filling material 680 is located between the first metal layer 260', the second metal layer 262' and the metal contact 22, so as to conduct current between the first metal layer 260', the second metal layer 262' and the metal contact 22. The first metal layer 260' and the second metal layer 262' are patterned, so that the surface facing the metal contact 22 is a roughened surface with a plurality of recesses and protrusions. Therefore, the contact area between the light-emitting element array and the circuit carrier is increased, and the connection strength between the light-emitting element array and the circuit carrier is also improved. The plurality of recesses and protrusions have regular or irregular shapes, and the surface roughness (Ra) is between 0.5 and 5 microns. The advantage of using anisotropic conductive adhesive as the filling material is that the distance between the first metal layer 260' and the second metal layer 262', that is, the first distance S3 as shown in FIG. 4B, can be less than 25 microns.

Fig. 6B is a schematic diagram of a single light-emitting element 300d' in the light-emitting element array 32' shown in Fig. 6A. The filling material 680 and the patterned surfaces of the first metal layer 260' and the second metal layer 262' can also be applied to the embodiments shown in FIGS. 5A to 5C, thereby forming the structure shown in FIG. 6B . The filling material 680 fills the gap between the light emitting element 300d' and the circuit carrier 23 to improve the connection strength between the two and provide a current path between the circuit carrier and the light emitting element. The filling material 680 includes anisotropic conductive film (ACF), which has a vertical path between the light-emitting element 300d' and the circuit carrier 23 to conduct current and a parallel between the light-emitting element 300d' and the circuit carrier 23. The ability to insulate current from the lateral path of the light-emitting element 300d' or the circuit carrier. The filling material 680 is coated on the circuit carrier 23 before connecting the light-emitting element array to the circuit carrier 23. In one embodiment, neither the first metal layer 260' nor the second metal layer 262' contacts the metal contacts 22 of the circuit carrier 23. The filling material 680 is located between the first metal layer 260', the second metal layer 262' and the metal contact 22, so as to conduct current between the first metal layer 260', the second metal layer 262' and the metal contact 22. The first metal layer 260' and the second metal layer 262' are patterned, so that there are a plurality of recesses and protrusions on the surface facing the metal contact 22. Therefore, the contact area between the light emitting element and the circuit carrier is increased, and the connection strength between the light emitting element and the circuit carrier is also improved. The plurality of recesses and protrusions have regular or irregular shapes, and the surface roughness (Ra) is between 0.5 and 5 microns. Similarly, the filling material 680 and the patterned surfaces of the first metal layer 260' and the second metal layer 262' can also be applied to the above-mentioned embodiment shown in FIG. 5E to form the structure shown in FIG. 6C .

Referring to FIGS. 7A to 7G, which are cross-sectional views corresponding to each stage of a method of manufacturing a light-emitting device according to an embodiment of the present invention, the steps and structures in FIGS. 7A to 7D are the same as those in FIGS. 2A to 7 The embodiment shown in the 2D diagram and the related disclosure content are similar. The steps and structures of Figures 7F to 7G are similar to the embodiment shown in Figures 3E to 3F and related disclosure content. The difference lies in: As shown in Figure 7C, the dielectric layers 240a, 240b, 240c, and 280 are a photoresist, such as a positive photoresist or a negative photoresist; as shown in Figures 7D to 7E, the metal is formed After the layers 260a, 260b, 260c and the metal layers 262a, 262b, 262c are formed, the manufacturing method further includes removing the dielectric layers 240a, 240b, 240c, 280, thereby forming a gap between two adjacent light-emitting elements and Between the metal layers of a single light-emitting element; as shown in Figures 7F to 7G, after removing the substrate 21, two adjacent light-emitting elements are separated from each other by a gap, and the manufacturing method further includes roughening The exposed surface of the first conductive layer 102 forms a roughened surface 102a. The roughening method is as described above, and will not be repeated here. In one embodiment, in order to form a chip-scale red, green and blue light-emitting element for display or illumination, the manufacturing method can selectively coat a first wavelength conversion layer on the light-emitting element 300b 294, as shown in FIG. 7G, to convert the light emitted by the light-emitting element 300b into a first converted light. Furthermore, a second wavelength conversion layer 296 can be selectively coated on the light emitting element 300c to convert the light emitted by the light emitting element 300c into a second converted light. The light emitting element 300a is not coated with any wavelength conversion material, so as to directly emit blue light from the roughened surface 102a of the light emitting element 300a. The formation methods and materials of each conversion layer are as described above, and will not be repeated here. FIG. 7H is a top view of a die-level red, green, and blue light-emitting element unit including the red, green, and blue light-emitting element groups shown in FIG. 7G according to an embodiment of the present invention. The first width of the red, green, and blue light-emitting element unit 37 S1, the first length S2, the second length d2, the first distance S3, the second distance S4, the second width d1, and the third distance S5 are as described in the embodiment shown in FIG. 4B and related disclosures, here It is not repeated here. The difference is that the light-emitting stack 101 is not surrounded by the dielectric layer 240a and the opaque layer 290. After forming the first wavelength conversion layer 294 and the second wavelength conversion layer 296, there is no need to coat the transparent packaging material 24 of the foregoing embodiment, and a dicing step is directly performed to directly cut the circuit carrier 23 without dicing light emission The element array 32 forms a plurality of crystal grain-level red, green and blue light-emitting element units. Referring to FIG. 7I and FIG. 7J, it is a cross-sectional view and a top view of a light-emitting element unit 37 at the die level including a single light-emitting element after the cutting step. The first length S1, the first width S6, the second width d1, the second length d2, the first distance S3, and the second distance S4 of the die-level light-emitting element unit 37 are shown in the embodiment shown in FIG. 5B and related disclosures. The content is described and will not be repeated here. The difference is that the sidewalls of the light-emitting stack 101, the first metal layer 260, and the second metal layer 262 do not have the dielectric layer 240a and the opaque layer 290; in addition, There is no transparent packaging material 24 on the wavelength conversion layer 298.

Referring to FIG. 8A, it is a display module 76 according to an embodiment of the present invention, which includes a plurality of die-level red, green and blue light-emitting element units 65 located on the second circuit carrier 73. For example, any two adjacent die-level red, green, and blue light-emitting element units 65 are separated from each other by a distance or are arranged seamlessly so that the two are in contact with each other. The second circuit carrier 73 includes a circuit 72, which is electrically connected to the light-emitting elements of the red, green, and blue light-emitting element units 65, so as to independently control the blue, red, and green light-emitting elements in each red, green, and blue light-emitting element unit 65 . In one embodiment, the display module 76 includes M columns and N rows of die-level red, green, and blue light-emitting element units 65 for a display with X*Y pixel resolution, where M/N = 1/1 , 3/2, 4/3 or 16/9, X=a*M, Y=b*N, and both a and b are positive integers equal to or greater than 2. The display module 76 includes more than 500 red, green and blue light-emitting element units 65 in an area of one square inch. In other words, the display module 76 includes more than 1500 light-emitting stacks 101 in an area of one square inch. In another embodiment, each die-level red, green, and blue light-emitting element unit includes a plurality of red, green, and blue light-emitting element groups, and each group includes a blue light-emitting element and a red light-emitting element as described above. And a green light-emitting element. A plurality of red, green, and blue light-emitting element groups are arranged in an I*J array in a die-level red, green, and blue light-emitting element unit, where I and J are positive integers, and at least one of I and J is greater than 1. The ratio of I to J is preferably close to or equal to 1/1, 3/2, 4/3 or 16/9. In a red, green, and blue light-emitting element unit at a grain level, the distance between two adjacent light-emitting stacks from two adjacent groups of red, green and blue light-emitting elements is substantially equal to that from two adjacent light-emitting element groups. The distance between two adjacent light-emitting stacks of the grain-level red, green and blue light-emitting element units. The display module 76 includes M columns and N rows of die-level red, green, and blue light-emitting element units 65 for a display with X*Y pixel resolution, where M /N = 1/1, 3/2, 4 /3 or 16/9, X=a*M*I, Y=b*N*J, and both a and b are positive integers equal to or greater than 2. The display module 76 includes more than 500 groups of red, green and blue light-emitting elements in an area of one square inch. In other words, the display module 76 includes more than 1500 light-emitting stacks 101 in an area of one square inch. Each of the red, green, and blue light emitting element units and each of the red, green, and blue light emitting element units can be independently driven by circuits formed on the circuit carrier 23 and the second circuit carrier 73. The material of the second circuit carrier board 73 is FR-4, BT (Bismaleimide-Triazine) resin, ceramic or glass. FIG. 8B is a schematic diagram of a lighting module 78 according to an embodiment of the present invention. The lighting module 78 includes a plurality of die-level light-emitting element units 66 on the second circuit carrier 73. Depending on the applied driving voltage, the die-level light-emitting element units 66 can be connected in series or in parallel via the circuits on the second circuit carrier 73. In one embodiment, the lighting module 78 is disposed in the bulb 80 as shown in No. 9. The bulb 80 further includes an optical lens 82 covering the lighting module 78, a heat sink 85 with a connecting surface and the lighting module 78 is located on the connecting surface, a connecting portion 87 connected to the heat sink 85, and a connecting portion 87 is an electrical connector 88 that is connected to and electrically connected to the lighting module 78.

The above-mentioned embodiments are only to illustrate the technical ideas and features of the present invention, and their purpose is to enable those who are familiar with the art to understand the content of the present invention and implement them accordingly. When they cannot be used to limit the patent scope of the present invention, That is, all equal changes or modifications made in accordance with the spirit of the present invention should still be covered by the patent scope of the present invention.

100, 200a, 200b, and 200c‧‧‧Light-emitting structure 11.21‧‧‧Substrate 102‧‧‧First conductive layer 104‧‧‧Active layer 106‧‧‧Second conductive layer 107a, 107b‧‧‧electrode or bonding pad 120‧‧‧Protection layer 122‧‧‧First dielectric layer 140、240‧‧‧Second dielectric layer 222a, 222b, 222c, 240a, 240b, 240c, 280‧‧‧Dielectric layer 160, 260a, 260b, 260c, 162, 262a, 262b, 262c‧‧‧Metal layer 20, 30, 32, 32’‧‧‧Light-emitting element array 21‧‧‧Substrate 22‧‧‧Tin material 13, 23‧‧‧Circuit carrier board 24‧‧‧Transparent packaging materials 25‧‧‧Light-emitting component package 10, 10a, 10b, 10c, 20a, 20b, 20c, 300, 300a, 300b, 300c, 300d, 300a’, 300b’, 300c’, 300d’‧‧‧Light-emitting element 102a‧‧‧surface 101‧‧‧Light-emitting laminate 221‧‧‧Reflective layer 260、260’‧‧‧First metal layer 262、262’‧‧‧Second metal layer 290‧‧‧opaque layer 22‧‧‧Metal contact 22a‧‧‧Conductive channel 294‧‧‧First wavelength conversion layer 296‧‧‧Second wavelength conversion layer 35, 36, 36’, 65, 66, 37‧‧‧Red, Green and Blue Light-emitting Element Unit S1, S6’‧‧‧First width S2‧‧‧First length d1, d1’‧‧‧second width d2‧‧‧second length S3, S3’‧‧‧First distance S4‧‧‧Second distance S5‧‧‧third distance 298‧‧‧Wavelength conversion layer S1‧‧‧First length S6‧‧‧First width 680‧‧‧filling material 76‧‧‧Display Module 73‧‧‧Second circuit carrier board 72‧‧‧Circuit 78‧‧‧Lighting Module 80‧‧‧Bulb 82‧‧‧Optical lens 85‧‧‧Heat sink 87‧‧‧Connecting part 88‧‧‧Electrical connector

1A to 1E are schematic diagrams of a method of manufacturing a light-emitting device according to an embodiment of the present invention;

Fig. 1F is a schematic diagram of the application of the light-emitting element according to the embodiment of the present invention;

2A to 2D are schematic diagrams of a method for fabricating a light-emitting element array according to an embodiment of the present invention;

FIG. 2E is a schematic diagram of the connection between the light emitting element array and the circuit board according to an embodiment of the present invention;

2F is a schematic diagram of a light-emitting element array having a first conductive layer with a roughened surface according to an embodiment of the present invention;

FIG. 2G is a schematic diagram of a package of a light-emitting element array according to an embodiment of the present invention;

3A to 3G are cross-sectional views corresponding to each stage of the manufacturing method of the light-emitting device according to the embodiment of the present invention;

FIG. 4A is a top view of the light-emitting element array connected to the circuit carrier in the form of flip chip as shown in FIG. 3F;

FIG. 4B is a top view of a die-level red, green and blue light-emitting element unit including the red, green and blue light-emitting element groups shown in FIG. 3G according to an embodiment of the present invention;

FIG. 5A is a top view of a light emitting element array connected to a circuit carrier in the form of flip chip according to an embodiment of the present invention;

FIG. 5B is a top view of a light-emitting element unit at a die level of a single light-emitting element according to an embodiment of the present invention;

FIG. 5C is a cross-sectional view of a light-emitting element unit at a die level of a single light-emitting element according to an embodiment of the present invention;

FIG. 5D is a top view of a light-emitting element unit at a die level of a single light-emitting element according to an embodiment of the present invention;

FIG. 5E is a cross-sectional view of a light-emitting element unit at a die level of a single light-emitting element according to an embodiment of the present invention;

FIG. 6A is a cross-sectional view of a die-level red, green and blue light-emitting element unit according to an embodiment of the present invention

FIG. 6B is a schematic diagram of a single light-emitting element in the light-emitting element array shown in FIG. 6A;

FIG. 6C is a schematic diagram of a single light-emitting element in a light-emitting element array according to an embodiment of the present invention;

7A to 7G are cross-sectional views corresponding to each stage of the process of a method of manufacturing a light-emitting device according to an embodiment of the present invention;

FIG. 7H is a top view of a die-level red, green and blue light-emitting element unit including the red, green and blue light-emitting element groups shown in FIG. 7G according to an embodiment of the present invention;

FIG. 7I is a cross-sectional view of a light-emitting element unit at a die level of a single light-emitting element according to an embodiment of the present invention;

FIG. 7J is a top view of a light-emitting element unit at a die level of a single light-emitting element according to an embodiment of the present invention;

FIG. 8A is a schematic diagram of a display module according to an embodiment of the present invention;

FIG. 8B is a schematic diagram of a display module according to an embodiment of the present invention; and

Fig. 9 is an exploded view of the bulb element according to the embodiment of the present invention.

300d’‧‧‧Light-emitting element

240a‧‧‧Dielectric layer

298‧‧‧Wavelength conversion layer

23‧‧‧Circuit carrier board

22‧‧‧Metal contact

260’‧‧‧The first metal layer

262’‧‧‧Second metal layer

24‧‧‧Transparent packaging materials

680‧‧‧filling material

Claims (10)

A light-emitting device, comprising: a circuit carrier including metal contacts; a light-emitting structure on the circuit carrier, the light-emitting structure including a first conductive layer, an active layer, and a second conductive layer, the active The layer is located on the first conductive layer and includes a sidewall, the second conductive layer is located on the active layer; a first metal layer is located on the light-emitting structure and electrically contacts the first conductive layer; a second metal layer , Located on the light emitting structure and electrically contacting the second conductive layer; a wavelength conversion layer located on the side of the light emitting structure away from the first metal layer, and the wavelength conversion layer does not cover the sidewall of the active layer And a dielectric layer surrounding the light-emitting structure and surrounding part of the first metal layer and part of the second metal layer. The light-emitting device according to claim 1, wherein the first metal layer and the second metal layer each have a roughened surface, and the roughness of the roughened surface is between 0.5 μm and 5 μm, the The roughened surface is in contact with the metal, and the roughened surfaces are located on the same side of the active layer. The light-emitting device according to claim 1, wherein the dielectric layer includes an upper surface away from the light-emitting structure, and there is a gap between the upper surface and the circuit carrier, the first metal layer and/or the second The metal layer covers part of the upper surface. The light-emitting device according to claim 1, wherein the first conductive layer and the second conductive layer each have a side wall, and the wavelength conversion layer does not cover the first conductive layer The sidewall of the electrical layer and the sidewall that does not cover the second conductive layer. The light-emitting device according to claim 1, further comprising a dielectric layer surrounding the light-emitting structure and surrounding part of the first metal layer and part of the second metal layer, wherein the wavelength conversion layer has a sidewall, and the dielectric layer The electric layer covers part of the sidewall. The light-emitting device according to claim 1, wherein the wavelength conversion layer has a roughened surface facing the light-emitting structure. The light-emitting device according to claim 1, further comprising a first dielectric layer located on the light-emitting structure, the first dielectric layer located between the first metal layer and the second metal layer. The light-emitting device according to claim 7, wherein the first dielectric layer includes an upper surface away from the light-emitting structure, and there is a gap between the upper surface and the circuit carrier, the first metal layer and/or the second Two metal layers cover part of the upper surface. The light-emitting device according to claim 7, further comprising a second dielectric layer located between the light-emitting structure and the first dielectric layer, the first dielectric layer and the second dielectric layer insulating the first dielectric layer A metal layer and the second metal layer. The light-emitting device according to claim 9, wherein a part of the first metal layer is located on the second dielectric layer.

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