TWI800672B - 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及其形成方法、圖案形成方法以及化合物及其製造方法 - Google Patents

抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及其形成方法、圖案形成方法以及化合物及其製造方法 Download PDF

Info

Publication number
TWI800672B
TWI800672B TW108128120A TW108128120A TWI800672B TW I800672 B TWI800672 B TW I800672B TW 108128120 A TW108128120 A TW 108128120A TW 108128120 A TW108128120 A TW 108128120A TW I800672 B TWI800672 B TW I800672B
Authority
TW
Taiwan
Prior art keywords
forming
underlayer film
resist underlayer
same
compound
Prior art date
Application number
TW108128120A
Other languages
English (en)
Other versions
TW202012485A (zh
Inventor
也
中津大貴
谷口智章
小田智
Original Assignee
日商Ｊｓｒ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｊｓｒ股份有限公司 filed Critical 日商Ｊｓｒ股份有限公司
Publication of TW202012485A publication Critical patent/TW202012485A/zh
Application granted granted Critical
Publication of TWI800672B publication Critical patent/TWI800672B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/10—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/14—Side-groups
    • C08G2261/142—Side-chains containing oxygen
    • C08G2261/1422—Side-chains containing oxygen containing OH groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
    • C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polyethers (AREA)
TW108128120A 2018-08-09 2019-08-07 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及其形成方法、圖案形成方法以及化合物及其製造方法 TWI800672B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-150401 2018-08-09
JP2018150401 2018-08-09

Publications (2)

Publication Number Publication Date
TW202012485A TW202012485A (zh) 2020-04-01
TWI800672B true TWI800672B (zh) 2023-05-01

Family

ID=69415206

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108128120A TWI800672B (zh) 2018-08-09 2019-08-07 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及其形成方法、圖案形成方法以及化合物及其製造方法

Country Status (6)

Country Link
US (1) US11880138B2 (zh)
JP (1) JP7272364B2 (zh)
KR (1) KR102686139B1 (zh)
CN (1) CN112470077A (zh)
TW (1) TWI800672B (zh)
WO (1) WO2020031733A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7103993B2 (ja) * 2019-05-16 2022-07-20 信越化学工業株式会社 有機膜形成用組成物、パターン形成方法及び重合体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160085152A1 (en) * 2013-06-24 2016-03-24 Jsr Corporation Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2008143233A1 (ja) * 2007-05-21 2010-08-12 国立大学法人京都大学 フェニレン系ポリマー、カーボンナノチューブ用分散剤、カーボンナノチューブ複合体、太陽電池用薄膜、ならびにカーボンナノチューブ複合体の分散液およびその製造方法
US20130189533A1 (en) * 2010-10-14 2013-07-25 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition for lithography containing polyether structure-containing resin
JP5653880B2 (ja) 2011-10-11 2015-01-14 信越化学工業株式会社 レジスト下層膜形成材料及びパターン形成方法
JP7041358B2 (ja) 2016-06-03 2022-03-24 Jsr株式会社 膜形成用組成物、膜、レジスト下層膜の形成方法、パターニングされた基板の製造方法及び化合物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160085152A1 (en) * 2013-06-24 2016-03-24 Jsr Corporation Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound

Also Published As

Publication number Publication date
JP7272364B2 (ja) 2023-05-12
CN112470077A (zh) 2021-03-09
TW202012485A (zh) 2020-04-01
US11880138B2 (en) 2024-01-23
WO2020031733A1 (ja) 2020-02-13
KR102686139B1 (ko) 2024-07-19
JPWO2020031733A1 (ja) 2021-08-26
KR20210040972A (ko) 2021-04-14
US20210157235A1 (en) 2021-05-27

Similar Documents

Publication Publication Date Title
EP3627224A4 (en) FILM-FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM IN LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD
EP3348542A4 (en) COMPOUND, RESIN, RESIST COMPOSITION AND RADIATION SENSITIVE COMPOSITION, METHOD FOR FORMING A RESIST STRUCTURE, METHOD FOR PRODUCING AN AMORPHOUS FILMS, MATERIAL FOR FORMING A lithographic LAYER FILMS, COMPOSITION FOR PRODUCING A lithographic LAYER FILMS, METHOD FOR PRODUCING A CONTROL STRUCTURE AND CLEANING PROCESS
EP3346334A4 (en) MATERIAL FOR FORMING LITHOGRAPHY OF LAYERED LAYERED FILM, COMPOSITION FOR FORMING LITHOGRAPHY OF A LAYERED LAYERED FILM, LITHOGRAPHY LAYERING FILM AND METHOD OF FORMING A RESISTANCE STRUCTURE
EP3451059A4 (en) COMPOSITION FOR FORMING A RESISTANT LAYER, LITHOGRAPHY LAYER AND STRUCTURAL FORMING METHOD
IL253822A0 (en) Compound, resin, material for the production of an underlayer of film for lithography, preparation for the production of an underlayer of film for lithography, an underlayer for lithography, a protective material for the production method and a cleaning agent for the compound or resin
EP3327005A4 (en) COMPOUND, RESIN, LITHOGRAPHY-BASED UNDERLAYER FILM FORMING MATERIAL, COMPOSITION FOR FORMING LITHOGRAPHY-BASED UNDERLAYER FILM, LITHOGRAPHY-BASED FILM FORMING, PHOTOSENSITIVE RESIN PATTERN FORMING METHOD, PATTERN FORMING METHOD CIRCUIT, AND PURIFICATION METHOD
EP3345889A4 (en) COMPOUND AND METHOD FOR PRODUCING THE SAME, COMPOSITION, COMPOSITION FOR FORMING OPTICAL COMPONENT, COMPOSITION FOR FORMING LITHOGRAPHIC FILM, RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, RADIATION-SENSITIVE COMPOSITION, PROCESS FOR PRODUCING FILM AMORPHOUS, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAY FILM, COMPOSITION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, PROCESS FOR PRODUCING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING CIRCUIT PATTERN, AND METHOD FOR PURIFICATION
EP3279179A4 (en) Compound, resin, and method for purifying same, underlayer film formation material for lithography, underlayer film forming composition, and underlayer film, and method for forming resist pattern and method for forming circuit pattern
IL254447A0 (en) Compound, resin, material for making a sublayer film for lithography, a preparation for creating a sublayer film for lithography, a sublayer film for lithography, a method for creating a pattern and a method for cleaning the compound or resin
SG11202000234PA (en) Underlayer film-forming composition, pattern-forming method, and copolymer for forming underlayer film used for pattern formation
EP3757678A4 (en) RESIST SUBLAYER FILM-FORMING COMPOSITION AND METHOD FOR PREPARING PATTERNS
EP2955175A4 (en) COMPOUND, SUB-LAYER FILM FORMATION MATERIAL FOR LITHOGRAPHY, SUB-LAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD
EP3229075A4 (en) Photoresist composition, method for manufacturing same, and method for forming resist pattern
EP3690547A4 (en) COMPOSITION FOR LITHOGRAPHY, PATTERN FORMATION PROCESS AND COMPOUND
EP3346335A4 (en) MATERIAL FOR FORMING LITHOGRAPHY OF LAYER LAYERS, COMPOSITION FOR FORMING LITHOGRAPHY LAYER LAYERS, LITHOGRAPHY LAYERINGS AND METHOD FOR THE PRODUCTION THEREOF, PATTERN FORMULATION, RESIN AND CLEANING METHOD
EP3266759A4 (en) Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin
EP3715949A4 (en) COMPOSITION FOR FORMING A LITHOGRAPHIC FILM, LITHOGRAPHIC FILM, RESERVE PATTERN FORMING PROCESS AND CIRCUIT PATTERN FORMING PROCESS
EP2955577A4 (en) COMPOUND, SUB-LAYER SUBSTRATE FOR LITHOGRAPHY, UNDERLAY FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD
EP3267256A4 (en) Underlayer film-forming material for lithography, underlayer film-forming composition for lithography, underlayer film for lithography, resist pattern-forming method, and circuit pattern-forming method
EP3816728A4 (en) FILM-FORMING MATERIAL FOR LITHOGRAPHY, FILM-FORMING COMPOSITION FOR LITHOGRAPHY, UNDER-LAYER FILM FOR LITHOGRAPHY AND METHOD FOR FORMING PATTERNS
EP3410214A4 (en) FILM MASK, METHOD OF MANUFACTURING THE SAME, AND METHOD FOR FORMING PATTERNS USING THE FILM MASK, AND PATTERN THUS FORMED
EP3605225A4 (en) COMPOUND, RESIST COMPOSITION WITH THIS COMPOUND, AND PATTERN MANUFACTURING METHOD USING THE RESIST COMPOSITION
EP3179308A4 (en) Underlayer film-forming composition for lithography, underlayer film for lithography, and pattern forming method
EP3786710A4 (en) COMPOSITION FORMING RESIST UNDERLAYER FILM, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN MAKING METHOD
EP3842863A4 (en) FILM EDUCATION MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, LAYER FILM FOR LITHOGRAPHY AND PATTERN GENERATION PROCESS