TWI799608B - 用於選擇性移除鎳鉑材料之方法 - Google Patents

用於選擇性移除鎳鉑材料之方法 Download PDF

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Publication number
TWI799608B
TWI799608B TW108122754A TW108122754A TWI799608B TW I799608 B TWI799608 B TW I799608B TW 108122754 A TW108122754 A TW 108122754A TW 108122754 A TW108122754 A TW 108122754A TW I799608 B TWI799608 B TW I799608B
Authority
TW
Taiwan
Prior art keywords
selectively removing
platinum material
nickel platinum
removing nickel
selectively
Prior art date
Application number
TW108122754A
Other languages
English (en)
Other versions
TW202018062A (zh
Inventor
洪性辰
Original Assignee
美商恩特葛瑞斯股份有限公司
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Publication of TW202018062A publication Critical patent/TW202018062A/zh
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Publication of TWI799608B publication Critical patent/TWI799608B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/4757—After-treatment
    • H01L21/47573—Etching the layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • ing And Chemical Polishing (AREA)
TW108122754A 2018-07-06 2019-06-28 用於選擇性移除鎳鉑材料之方法 TWI799608B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862694595P 2018-07-06 2018-07-06
US62/694,595 2018-07-06

Publications (2)

Publication Number Publication Date
TW202018062A TW202018062A (zh) 2020-05-16
TWI799608B true TWI799608B (zh) 2023-04-21

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW111135892A TWI834308B (zh) 2018-07-06 2019-06-28 用於選擇性移除鎳鉑材料之方法
TW108122754A TWI799608B (zh) 2018-07-06 2019-06-28 用於選擇性移除鎳鉑材料之方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW111135892A TWI834308B (zh) 2018-07-06 2019-06-28 用於選擇性移除鎳鉑材料之方法

Country Status (3)

Country Link
US (2) US11441229B2 (zh)
KR (2) KR20200005457A (zh)
TW (2) TWI834308B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3101360A1 (fr) * 2019-09-27 2021-04-02 Technic France Composition chimique pour retirer des residus en alliage nickel-platine d’un substrat, et procede de retrait de tels residus
CA3074198A1 (en) * 2020-02-28 2021-08-28 Fluid Energy Group Ltd. Modified methanesulfonic acid and uses thereof
CN112501615B (zh) * 2020-11-30 2023-03-24 南通麦特隆新材料科技有限公司 一种集成电路外引线电镀层的退镀液及其制备方法
CN114807944A (zh) * 2021-01-28 2022-07-29 江苏悦锌达新材料有限公司 一种环保型退镀剂及其制备方法和使用方法
CN113265660B (zh) * 2021-04-30 2023-03-17 光华科学技术研究院(广东)有限公司 蚀刻液及其应用
CN115261861B (zh) * 2022-08-15 2023-10-24 易安爱富(武汉)科技有限公司 一种减薄液及其制备方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140038348A1 (en) * 2012-08-03 2014-02-06 Samsung Display Co., Ltd. Etchant composition and manufacturing method for thin film transistor using the same
TW201406931A (zh) * 2012-05-11 2014-02-16 Advanced Tech Materials 用於矽化物製造期間濕蝕刻ＮｉＰｔ之配方
JP2014189834A (ja) * 2013-03-27 2014-10-06 Adeka Corp エッチング液組成物及びエッチング方法
TW201500521A (zh) * 2013-05-02 2015-01-01 Fujifilm Corp 蝕刻方法、用於其的蝕刻液及蝕刻液套組、以及半導體基板製品的製造方法

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US20090162718A1 (en) 2005-12-02 2009-06-25 Extrand Charles W Low Impurity Elastomeric Material
US7618891B2 (en) 2006-05-01 2009-11-17 International Business Machines Corporation Method for forming self-aligned metal silicide contacts
JP2014507815A (ja) 2011-03-11 2014-03-27 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規なエッチング組成物
US8835309B2 (en) 2012-09-13 2014-09-16 International Business Machines Corporation Forming nickel—platinum alloy self-aligned silicide contacts
WO2014115758A1 (ja) 2013-01-24 2014-07-31 昭和電工株式会社 エッチング液
CA2943992A1 (en) 2014-02-25 2015-09-03 Entegris, Inc. Wet based formulations for the selective removal of noble metals
EP3381046B1 (en) * 2015-11-23 2022-12-28 Entegris, Inc. Process for selectively etching p-doped polysilicon relative to silicon nitride
KR102201597B1 (ko) 2016-05-27 2021-01-12 엔테그리스, 아이엔씨. 코팅된 다공성 중합체 멤브레인

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201406931A (zh) * 2012-05-11 2014-02-16 Advanced Tech Materials 用於矽化物製造期間濕蝕刻ＮｉＰｔ之配方
US20140038348A1 (en) * 2012-08-03 2014-02-06 Samsung Display Co., Ltd. Etchant composition and manufacturing method for thin film transistor using the same
JP2014189834A (ja) * 2013-03-27 2014-10-06 Adeka Corp エッチング液組成物及びエッチング方法
TW201500521A (zh) * 2013-05-02 2015-01-01 Fujifilm Corp 蝕刻方法、用於其的蝕刻液及蝕刻液套組、以及半導體基板製品的製造方法

Also Published As

Publication number Publication date
US11441229B2 (en) 2022-09-13
TW202307179A (zh) 2023-02-16
TWI834308B (zh) 2024-03-01
TW202018062A (zh) 2020-05-16
US20220372631A1 (en) 2022-11-24
KR102469007B1 (ko) 2022-11-22
KR20220025784A (ko) 2022-03-03
KR20200005457A (ko) 2020-01-15
US20200010959A1 (en) 2020-01-09

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