TWI799541B - 形成於金屬層下方之薄膜電阻器(tfr)及製造方法 - Google Patents
形成於金屬層下方之薄膜電阻器(tfr)及製造方法 Download PDFInfo
- Publication number
- TWI799541B TWI799541B TW108109161A TW108109161A TWI799541B TW I799541 B TWI799541 B TW I799541B TW 108109161 A TW108109161 A TW 108109161A TW 108109161 A TW108109161 A TW 108109161A TW I799541 B TWI799541 B TW I799541B
- Authority
- TW
- Taiwan
- Prior art keywords
- tfr
- fabrication
- thin
- metal layer
- formed under
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862670880P | 2018-05-14 | 2018-05-14 | |
US62/670,880 | 2018-05-14 | ||
US16/034,394 | 2018-07-13 | ||
US16/034,394 US10818748B2 (en) | 2018-05-14 | 2018-07-13 | Thin-film resistor (TFR) formed under a metal layer and method of fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201947664A TW201947664A (zh) | 2019-12-16 |
TWI799541B true TWI799541B (zh) | 2023-04-21 |
Family
ID=68463354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108109161A TWI799541B (zh) | 2018-05-14 | 2019-03-18 | 形成於金屬層下方之薄膜電阻器(tfr)及製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10818748B2 (zh) |
CN (1) | CN112119511A (zh) |
DE (1) | DE112019002455T5 (zh) |
TW (1) | TWI799541B (zh) |
WO (1) | WO2019221915A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7267786B2 (ja) * | 2019-03-13 | 2023-05-02 | エイブリック株式会社 | 半導体装置の製造方法 |
KR20220030341A (ko) | 2020-08-27 | 2022-03-11 | 삼성전자주식회사 | 반도체 소자 |
US11626474B2 (en) | 2020-12-31 | 2023-04-11 | Microchip Technology Incorporated | Thin-film resistor (TFR) with improved contacts |
DE112021006719T5 (de) | 2020-12-31 | 2023-11-02 | Microchip Technology Incorporated | Dünnschichtwiderstand (tfr) mit verbesserten kontakten |
US11670439B2 (en) | 2021-07-15 | 2023-06-06 | Microchip Technology Incorporated | Thin-film resistor (TFR) module |
WO2023287457A1 (en) * | 2021-07-15 | 2023-01-19 | Microchip Technology Incorporated | Thin-film resistor (tfr) module |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW389993B (en) * | 1998-11-18 | 2000-05-11 | United Microelectronics Corp | Method for producing thin film resistance of dual damascene interconnect |
US20150008560A1 (en) * | 2011-05-06 | 2015-01-08 | Texas Instruments Deutschland Gmbh | Semiconductor device and method for low resistive thin film resistor interconnect |
US20160197135A1 (en) * | 2012-12-28 | 2016-07-07 | Texas Instruments Incorporated | Single photomask high precision thin film resistor |
TW201711156A (zh) * | 2015-06-18 | 2017-03-16 | 微晶片科技公司 | 具有一增加之遮罩層的鑲嵌薄膜電阻器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5447763A (en) * | 1990-08-17 | 1995-09-05 | Ion Systems, Inc. | Silicon ion emitter electrodes |
US5593602A (en) * | 1993-03-29 | 1997-01-14 | Pilkington Plc | Metal substrate for a magnetic disc and manufacture thereof |
US5593601A (en) * | 1995-06-01 | 1997-01-14 | Industrial Technology Research Institute | Etching recipe for the CrSi film |
US6534374B2 (en) | 2001-06-07 | 2003-03-18 | Institute Of Microelectronics | Single damascene method for RF IC passive component integration in copper interconnect process |
US7012499B2 (en) * | 2003-06-02 | 2006-03-14 | International Business Machines Corporation | Method of fabrication of thin film resistor with 0 TCR |
JP4345626B2 (ja) | 2004-09-27 | 2009-10-14 | 豊田合成株式会社 | 半導体素子及びその製造方法。 |
US7669313B2 (en) | 2005-07-11 | 2010-03-02 | Texas Instruments Incorporated | Method for fabricating a thin film resistor semiconductor structure |
US7485540B2 (en) * | 2005-08-18 | 2009-02-03 | International Business Machines Corporation | Integrated BEOL thin film resistor |
JP5560595B2 (ja) * | 2009-06-18 | 2014-07-30 | 富士電機株式会社 | 半導体装置の製造方法 |
US8426745B2 (en) * | 2009-11-30 | 2013-04-23 | Intersil Americas Inc. | Thin film resistor |
US8680618B2 (en) | 2011-10-17 | 2014-03-25 | Texas Instruments Incorporated | Structure and method for integrating front end SiCr resistors in HiK metal gate technologies |
KR20130076979A (ko) * | 2011-12-29 | 2013-07-09 | 삼성전자주식회사 | 반도체 소자 및 이의 제조방법 |
CN104051614A (zh) | 2013-03-15 | 2014-09-17 | 联华电子股份有限公司 | 埋入式电阻 |
TWI653367B (zh) * | 2013-06-11 | 2019-03-11 | 美商應用材料股份有限公司 | 具有高薄片電阻之工件上的電化學沉積 |
-
2018
- 2018-07-13 US US16/034,394 patent/US10818748B2/en active Active
-
2019
- 2019-03-18 TW TW108109161A patent/TWI799541B/zh active
- 2019-05-02 WO PCT/US2019/030309 patent/WO2019221915A1/en active Application Filing
- 2019-05-02 CN CN201980031505.5A patent/CN112119511A/zh active Pending
- 2019-05-02 DE DE112019002455.8T patent/DE112019002455T5/de active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW389993B (en) * | 1998-11-18 | 2000-05-11 | United Microelectronics Corp | Method for producing thin film resistance of dual damascene interconnect |
US20150008560A1 (en) * | 2011-05-06 | 2015-01-08 | Texas Instruments Deutschland Gmbh | Semiconductor device and method for low resistive thin film resistor interconnect |
US20160197135A1 (en) * | 2012-12-28 | 2016-07-07 | Texas Instruments Incorporated | Single photomask high precision thin film resistor |
TW201711156A (zh) * | 2015-06-18 | 2017-03-16 | 微晶片科技公司 | 具有一增加之遮罩層的鑲嵌薄膜電阻器 |
Also Published As
Publication number | Publication date |
---|---|
US10818748B2 (en) | 2020-10-27 |
DE112019002455T5 (de) | 2021-01-28 |
TW201947664A (zh) | 2019-12-16 |
WO2019221915A1 (en) | 2019-11-21 |
CN112119511A (zh) | 2020-12-22 |
US20190348494A1 (en) | 2019-11-14 |
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