TWI798265B - 基於繞射之重疊散射術 - Google Patents

基於繞射之重疊散射術 Download PDF

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Publication number
TWI798265B
TWI798265B TW107133838A TW107133838A TWI798265B TW I798265 B TWI798265 B TW I798265B TW 107133838 A TW107133838 A TW 107133838A TW 107133838 A TW107133838 A TW 107133838A TW I798265 B TWI798265 B TW I798265B
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TW
Taiwan
Prior art keywords
diffraction patterns
positive
image
overlap
asymmetry
Prior art date
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TW107133838A
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English (en)
Chinese (zh)
Other versions
TW201931481A (zh
Inventor
尤法 路巴希福斯基
尤瑞 帕斯卡維爾
維拉得摩 朗維司基
阿農 馬那森
Original Assignee
美商克萊譚克公司
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Priority claimed from US15/757,119 external-priority patent/US20180342063A1/en
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201931481A publication Critical patent/TW201931481A/zh
Application granted granted Critical
Publication of TWI798265B publication Critical patent/TWI798265B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/4255—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application for alignment or positioning purposes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW107133838A 2018-01-02 2018-09-26 基於繞射之重疊散射術 TWI798265B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
??PCT/US18/12070 2018-01-02
WOPCT/US18/12070 2018-01-02
US15/757,119 US20180342063A1 (en) 2017-01-03 2018-01-02 Diffraction Based Overlay Scatterometry
PCT/US2018/012070 WO2018128984A1 (en) 2017-01-03 2018-01-02 Diffraction based overlay scatterometry
US15/757,119 2018-03-02
US16/122,495 US10824079B2 (en) 2017-01-03 2018-09-05 Diffraction based overlay scatterometry
US16/122,495 2018-09-05

Publications (2)

Publication Number Publication Date
TW201931481A TW201931481A (zh) 2019-08-01
TWI798265B true TWI798265B (zh) 2023-04-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW107133838A TWI798265B (zh) 2018-01-02 2018-09-26 基於繞射之重疊散射術

Country Status (9)

Country Link
US (1) US10824079B2 (https=)
EP (1) EP3721296A4 (https=)
JP (1) JP7101786B2 (https=)
KR (1) KR102391336B1 (https=)
CN (2) CN111566564A (https=)
IL (1) IL275650B2 (https=)
SG (1) SG11202006133SA (https=)
TW (1) TWI798265B (https=)
WO (1) WO2019135819A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
KR102759906B1 (ko) * 2019-08-30 2025-02-03 에이에스엠엘 홀딩 엔.브이. 메트롤로지 시스템 및 방법
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
CN112729113B (zh) * 2020-12-25 2022-03-18 长江存储科技有限责任公司 套合精度的测量方法及测量装置
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12235588B2 (en) * 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12504697B2 (en) 2023-06-02 2025-12-23 Kla Corporation Single grab pupil landscape via broadband illumination
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030190793A1 (en) * 2000-09-19 2003-10-09 Boaz Brill Lateral shift measurement using an optical technique
US20040137651A1 (en) * 2002-11-14 2004-07-15 Rodney Smedt Measurement of overlay using diffraction gratings when overlay exceeds the grating period
WO2018128984A1 (en) * 2017-01-03 2018-07-12 Kla-Tencor Corporation Diffraction based overlay scatterometry

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453969A (en) * 1994-05-04 1995-09-26 California Institute Of Technology Optical memory with pit depth encoding
US5598265A (en) * 1995-04-06 1997-01-28 Zygo Corporation Method for profiling an object surface using a large equivalent wavelength and system therefor
US7230703B2 (en) 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
CN100468213C (zh) * 2006-10-18 2009-03-11 上海微电子装备有限公司 用于光刻装置的对准系统及其级结合光栅系统
US7710572B2 (en) * 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
CN101876538A (zh) * 2010-05-07 2010-11-03 中国科学院光电技术研究所 一种接近式纳米光刻中的间隙测量方法
US9223227B2 (en) * 2011-02-11 2015-12-29 Asml Netherlands B.V. Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
US20120244461A1 (en) 2011-03-25 2012-09-27 Toshiba America Electronic Components, Inc. Overlay control method and a semiconductor manufacturing method and apparatus employing the same
JP5967924B2 (ja) * 2011-12-21 2016-08-10 キヤノン株式会社 位置検出装置、インプリント装置およびデバイス製造方法
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9189705B2 (en) * 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
WO2015078669A1 (en) * 2013-11-26 2015-06-04 Asml Netherlands B.V. Method, apparatus and substrates for lithographic metrology
NL2013293A (en) * 2014-06-02 2016-03-31 Asml Netherlands Bv Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method.
WO2016078862A1 (en) * 2014-11-21 2016-05-26 Asml Netherlands B.V. Metrology method and apparatus
SG11201703585RA (en) * 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
WO2016096524A1 (en) * 2014-12-19 2016-06-23 Asml Netherlands B.V. Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method
NL2017949A (en) * 2015-12-23 2017-06-28 Asml Netherlands Bv Metrology method, target and substrate
CN106933046B (zh) * 2015-12-30 2019-05-03 上海微电子装备（集团）股份有限公司 用于套刻误差检测的装置及测校方法
CN107340689B (zh) * 2016-02-29 2019-10-25 上海微电子装备（集团）股份有限公司 一种测量套刻误差的装置和方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030190793A1 (en) * 2000-09-19 2003-10-09 Boaz Brill Lateral shift measurement using an optical technique
US20040137651A1 (en) * 2002-11-14 2004-07-15 Rodney Smedt Measurement of overlay using diffraction gratings when overlay exceeds the grating period
WO2018128984A1 (en) * 2017-01-03 2018-07-12 Kla-Tencor Corporation Diffraction based overlay scatterometry
TW201839874A (zh) * 2017-01-03 2018-11-01 美商克萊譚克公司 基於繞射之重疊散射術

Also Published As

Publication number Publication date
CN120762257A (zh) 2025-10-10
TW201931481A (zh) 2019-08-01
IL275650A (en) 2020-08-31
JP7101786B2 (ja) 2022-07-15
KR102391336B1 (ko) 2022-04-26
US20190004439A1 (en) 2019-01-03
EP3721296A4 (en) 2021-09-08
KR20200096848A (ko) 2020-08-13
CN111566564A (zh) 2020-08-21
US10824079B2 (en) 2020-11-03
SG11202006133SA (en) 2020-07-29
JP2021510210A (ja) 2021-04-15
IL275650B (en) 2022-12-01
IL275650B2 (en) 2023-04-01
WO2019135819A1 (en) 2019-07-11
EP3721296A1 (en) 2020-10-14

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