IL275650B2 - Diffraction-based coverage scattering measurement - Google Patents
Diffraction-based coverage scattering measurementInfo
- Publication number
- IL275650B2 IL275650B2 IL275650A IL27565020A IL275650B2 IL 275650 B2 IL275650 B2 IL 275650B2 IL 275650 A IL275650 A IL 275650A IL 27565020 A IL27565020 A IL 27565020A IL 275650 B2 IL275650 B2 IL 275650B2
- Authority
- IL
- Israel
- Prior art keywords
- diffraction patterns
- positive
- overlay
- asymmetry
- negative
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
- G02B27/4255—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application for alignment or positioning purposes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/757,119 US20180342063A1 (en) | 2017-01-03 | 2018-01-02 | Diffraction Based Overlay Scatterometry |
| PCT/US2018/012070 WO2018128984A1 (en) | 2017-01-03 | 2018-01-02 | Diffraction based overlay scatterometry |
| US16/122,495 US10824079B2 (en) | 2017-01-03 | 2018-09-05 | Diffraction based overlay scatterometry |
| PCT/US2018/057896 WO2019135819A1 (en) | 2017-01-03 | 2018-10-29 | Diffraction based overlay scatterometry |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IL275650A IL275650A (en) | 2020-08-31 |
| IL275650B IL275650B (en) | 2022-12-01 |
| IL275650B2 true IL275650B2 (en) | 2023-04-01 |
Family
ID=68318115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL275650A IL275650B2 (en) | 2018-01-02 | 2020-06-25 | Diffraction-based coverage scattering measurement |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10824079B2 (https=) |
| EP (1) | EP3721296A4 (https=) |
| JP (1) | JP7101786B2 (https=) |
| KR (1) | KR102391336B1 (https=) |
| CN (2) | CN111566564A (https=) |
| IL (1) | IL275650B2 (https=) |
| SG (1) | SG11202006133SA (https=) |
| TW (1) | TWI798265B (https=) |
| WO (1) | WO2019135819A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| KR102759906B1 (ko) * | 2019-08-30 | 2025-02-03 | 에이에스엠엘 홀딩 엔.브이. | 메트롤로지 시스템 및 방법 |
| US11686576B2 (en) | 2020-06-04 | 2023-06-27 | Kla Corporation | Metrology target for one-dimensional measurement of periodic misregistration |
| US12100574B2 (en) | 2020-07-01 | 2024-09-24 | Kla Corporation | Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures |
| US11355375B2 (en) * | 2020-07-09 | 2022-06-07 | Kla Corporation | Device-like overlay metrology targets displaying Moiré effects |
| US11300405B2 (en) * | 2020-08-03 | 2022-04-12 | Kla Corporation | Grey-mode scanning scatterometry overlay metrology |
| CN112729113B (zh) * | 2020-12-25 | 2022-03-18 | 长江存储科技有限责任公司 | 套合精度的测量方法及测量装置 |
| US11796925B2 (en) | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
| US12032300B2 (en) | 2022-02-14 | 2024-07-09 | Kla Corporation | Imaging overlay with mutually coherent oblique illumination |
| US12487190B2 (en) | 2022-03-30 | 2025-12-02 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
| US12422363B2 (en) | 2022-03-30 | 2025-09-23 | Kla Corporation | Scanning scatterometry overlay metrology |
| US12235588B2 (en) * | 2023-02-16 | 2025-02-25 | Kla Corporation | Scanning overlay metrology with high signal to noise ratio |
| US12504697B2 (en) | 2023-06-02 | 2025-12-23 | Kla Corporation | Single grab pupil landscape via broadband illumination |
| US12373936B2 (en) | 2023-12-08 | 2025-07-29 | Kla Corporation | System and method for overlay metrology using a phase mask |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453969A (en) * | 1994-05-04 | 1995-09-26 | California Institute Of Technology | Optical memory with pit depth encoding |
| US5598265A (en) * | 1995-04-06 | 1997-01-28 | Zygo Corporation | Method for profiling an object surface using a large equivalent wavelength and system therefor |
| IL138552A (en) * | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Lateral shift measurement using an optical technique |
| US7193715B2 (en) * | 2002-11-14 | 2007-03-20 | Tokyo Electron Limited | Measurement of overlay using diffraction gratings when overlay exceeds the grating period |
| US7230703B2 (en) | 2003-07-17 | 2007-06-12 | Tokyo Electron Limited | Apparatus and method for measuring overlay by diffraction gratings |
| CN100468213C (zh) * | 2006-10-18 | 2009-03-11 | 上海微电子装备有限公司 | 用于光刻装置的对准系统及其级结合光栅系统 |
| US7710572B2 (en) * | 2006-11-30 | 2010-05-04 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| CN101876538A (zh) * | 2010-05-07 | 2010-11-03 | 中国科学院光电技术研究所 | 一种接近式纳米光刻中的间隙测量方法 |
| US9223227B2 (en) * | 2011-02-11 | 2015-12-29 | Asml Netherlands B.V. | Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US20120244461A1 (en) | 2011-03-25 | 2012-09-27 | Toshiba America Electronic Components, Inc. | Overlay control method and a semiconductor manufacturing method and apparatus employing the same |
| JP5967924B2 (ja) * | 2011-12-21 | 2016-08-10 | キヤノン株式会社 | 位置検出装置、インプリント装置およびデバイス製造方法 |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| US9189705B2 (en) * | 2013-08-08 | 2015-11-17 | JSMSW Technology LLC | Phase-controlled model-based overlay measurement systems and methods |
| WO2015078669A1 (en) * | 2013-11-26 | 2015-06-04 | Asml Netherlands B.V. | Method, apparatus and substrates for lithographic metrology |
| NL2013293A (en) * | 2014-06-02 | 2016-03-31 | Asml Netherlands Bv | Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method. |
| WO2016078862A1 (en) * | 2014-11-21 | 2016-05-26 | Asml Netherlands B.V. | Metrology method and apparatus |
| SG11201703585RA (en) * | 2014-11-25 | 2017-06-29 | Kla Tencor Corp | Analyzing and utilizing landscapes |
| WO2016096524A1 (en) * | 2014-12-19 | 2016-06-23 | Asml Netherlands B.V. | Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method |
| NL2017949A (en) * | 2015-12-23 | 2017-06-28 | Asml Netherlands Bv | Metrology method, target and substrate |
| CN106933046B (zh) * | 2015-12-30 | 2019-05-03 | 上海微电子装备（集团）股份有限公司 | 用于套刻误差检测的装置及测校方法 |
| CN107340689B (zh) * | 2016-02-29 | 2019-10-25 | 上海微电子装备（集团）股份有限公司 | 一种测量套刻误差的装置和方法 |
| WO2018128984A1 (en) * | 2017-01-03 | 2018-07-12 | Kla-Tencor Corporation | Diffraction based overlay scatterometry |
-
2018
- 2018-09-05 US US16/122,495 patent/US10824079B2/en active Active
- 2018-09-26 TW TW107133838A patent/TWI798265B/zh active
- 2018-10-29 JP JP2020536834A patent/JP7101786B2/ja active Active
- 2018-10-29 WO PCT/US2018/057896 patent/WO2019135819A1/en not_active Ceased
- 2018-10-29 SG SG11202006133SA patent/SG11202006133SA/en unknown
- 2018-10-29 CN CN201880085028.6A patent/CN111566564A/zh active Pending
- 2018-10-29 CN CN202511051445.7A patent/CN120762257A/zh active Pending
- 2018-10-29 EP EP18898220.1A patent/EP3721296A4/en active Pending
- 2018-10-29 KR KR1020207022325A patent/KR102391336B1/ko active Active
-
2020
- 2020-06-25 IL IL275650A patent/IL275650B2/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN120762257A (zh) | 2025-10-10 |
| TW201931481A (zh) | 2019-08-01 |
| IL275650A (en) | 2020-08-31 |
| JP7101786B2 (ja) | 2022-07-15 |
| KR102391336B1 (ko) | 2022-04-26 |
| US20190004439A1 (en) | 2019-01-03 |
| EP3721296A4 (en) | 2021-09-08 |
| KR20200096848A (ko) | 2020-08-13 |
| CN111566564A (zh) | 2020-08-21 |
| US10824079B2 (en) | 2020-11-03 |
| SG11202006133SA (en) | 2020-07-29 |
| JP2021510210A (ja) | 2021-04-15 |
| IL275650B (en) | 2022-12-01 |
| TWI798265B (zh) | 2023-04-11 |
| WO2019135819A1 (en) | 2019-07-11 |
| EP3721296A1 (en) | 2020-10-14 |
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