TWI792577B - 在半導體材料的基板晶圓上沉積磊晶層的方法和設備 - Google Patents

在半導體材料的基板晶圓上沉積磊晶層的方法和設備 Download PDF

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TWI792577B
TWI792577B TW110135265A TW110135265A TWI792577B TW I792577 B TWI792577 B TW I792577B TW 110135265 A TW110135265 A TW 110135265A TW 110135265 A TW110135265 A TW 110135265A TW I792577 B TWI792577 B TW I792577B
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substrate wafer
support shaft
susceptor
epitaxial layer
gas
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沃爾特 埃德邁爾
湯瑪士 史泰特納
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德商世創電子材料公司
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Abstract

一種在半導體材料的基板晶圓上沉積磊晶層的方法和設備，該基板晶圓具有楔形的橫截面，該楔形的橫截面具有一較薄及一較厚的邊緣。該方法包含： 將該基板晶圓和一基座佈置在沉積設備中，使得該基板晶圓同心地置於該基座上，且該基座係由支撐軸固持； 以一個時間週期旋轉該支撐軸； 使沉積氣體在從氣體入口到氣體出口的方向上通過基板晶圓上方； 使沖洗氣體以一定的流速沿預熱環下側及該基座下側通過； 使該支撐軸在該時間週期沿著移動路徑在從初始位置到最終位置再回到初始位置的方向上移動，其中在該初始位置處，該較薄邊緣與該氣體入口具有最小的距離；在該最終位置處，該較薄邊緣與該氣體入口具有最大的距離。

Description

在半導體材料的基板晶圓上沉積磊晶層的方法和設備
本發明係關於一種在半導體材料的基板晶圓上沉積磊晶層的方法，該半導體材料的基板晶圓具有楔形的橫截面，該楔形的橫截面具有一較薄邊緣及一較厚邊緣。本發明還關於一種適於實施該方法的設備。
在半導體材料的基板晶圓上沉積磊晶層通常是在可容納基板晶圓的沉積設備中藉由CVD（化學氣相沉積）實施。在磊晶層的沉積過程中，基板晶圓係置於由支撐軸固持並旋轉的基座上，沉積氣體通過自由上表面，即半導體晶圓的正面。沉積設備通常還具有預熱環，該預熱環圍繞基座佈置，並同時隔開一間隙。上圓頂與下圓頂界定一反應空間，在該反應空間內，磊晶層沉積在基板晶圓上。燈組（lamps of banks）的輻射熱經由一個或二個圓頂引入，以便提供所需的沉積溫度。具有這些特徵的沉積設備係描述於例如US 2016 0 010 239 A1中。
具有磊晶層的半導體晶圓（磊晶晶圓）是電子產業中要求特別高的應用所需者。相應地，例如是這種半導體晶圓的厚度均勻性的相關要求特別具有挑戰性。
即使在沉積磊晶層之後，基板晶圓厚度的不規則性通常仍會被保留，尤其是在磊晶層具有均勻厚度的情況下。然而，也有一些方法具有藉由沉積磊晶層來改善厚度均勻性的目的。
DE 11 2018 001 223 T5揭露沿預熱環下側及基座下側通過沉積設備的沖洗氣體、以及預熱環與基座之間的間隙的寬度影響磊晶層的厚度。
在US 2009 0 269 861 A1中，提出在磊晶層沉積期間根據基板晶圓的平坦度選擇製程條件。在WO 2018 117 402 A2和JP 2002 43 230 A中也提出類似的提案。
這些提案的共同特徵是它們利用在磊晶層沉積期間由於基板晶圓的旋轉而產生的效應：製程條件的改變導致磊晶層的厚度分佈的旋轉對稱改變。因此，這些提案僅適用於厚度的不規則性為旋轉對稱分佈的基板晶圓。
然而，也存在具有非旋轉對稱的厚度分佈的基板晶圓。當厚度從圓周之一區域向圓周之位於180°相對側的區域減小時，它們具有楔形的橫截面。從這種基板晶圓的較薄區域到較厚區域的橫截面具有一具有一較薄邊緣和一較厚邊緣的楔形形狀。具有旋轉對稱厚度分佈的磊晶層之沉積無法消除此楔形結構。
本發明之目的在於，當基板晶圓具有楔形的橫截面時，用磊晶層改善半導體晶圓的厚度均勻性。
該目的係藉由一種在半導體材料的基板晶圓上沉積磊晶層的方法來實現，該基板晶圓具有楔形的橫截面，該楔形的橫截面具有一較薄及一較厚的邊緣，該方法包含： 將基板晶圓和一基座佈置在沉積設備中，使得該基板晶圓同心地置於該基座上，且該基座係由支撐軸固持； 以一個時間週期旋轉該支撐軸； 使沉積氣體在從氣體入口到氣體出口的方向上通過該基板晶圓上方； 使沖洗氣體（flushing gas）以一流速沿預熱環下側及該基座下側通過； 使支撐軸在該時間週期沿著移動路徑在從初始位置到最終位置再回到初始位置的方向上移動，其中在該初始位置處，該較薄邊緣與氣體入口具有最小的距離，在該最終位置處，該較薄邊緣與氣體入口具有最大的距離。
已觀察到，沖洗氣體有時經由預熱環與基座之間的間隙進入，而稀釋沉積氣體，這具有使材料沉積的速率降低的效果。該效果隨著間隙的寬度而增加，而為本發明所利用。
間隙的寬度隨著較薄邊緣距氣體入口的距離而週期性地增加，且時間週期與基座的旋轉持續時間同步，具體地，使得在週期開始時基板晶圓的較薄邊緣距氣體入口的距離最小。此時，稀釋作用最小，且材料沉積的速率相對較高。基座旋轉半周後，當較厚邊緣具有離氣體入口最小距離時，在該位置的間隙相對較大，稀釋作用相對顯著，且材料沉積相對較低。由於根據本發明的過程，沉積在基板晶圓上的磊晶層具有厚度分佈，該厚度分佈也具有楔形的橫截面。然而，該橫截面與基板晶圓的橫截面互補，使得具有磊晶沉積層的半導體晶圓的楔形形狀至少較基板晶圓的楔形形狀不明顯。根據本發明的方法也適用於將具有楔形形狀的基板晶圓轉換成具有磊晶層的半導體晶圓，且其形狀對應於具有大致平面平行的正面及背面的晶圓的形狀。
當橫截面的邊緣具有不同的厚度時，基板晶圓具有本發明的意義上的楔形橫截面。厚度從較薄邊緣到較厚邊緣的恆定增加係較佳的，但不是必須的。
將基板晶圓放置在基座上。基座在平面圖上具有圓形的外圓周，且較佳具有凹穴（pocket）和支承面，基板晶圓以其背面的邊緣區域支承地置於該支承面上。基板晶圓與基座的外周同心地放置，且較佳以如下方式置於支承面上：使基板晶圓的背面側與界定凹穴的底部之間存在距離。可以在凹穴的底部形成孔，以便於將摻雜劑從基板晶圓的背面傳輸到基座下方的反應空間中。除了孔，底部可由含有纖維的材料構成，且由於材料的多孔性而確保摻雜劑的傳輸。
為了在磊晶層的沉積期間以預期的方式實現預熱環與基座之間的間隙寬度的變化，固持基座的支撐軸係週期性地從初始位置移動到最終位置再回到初始位置。支撐軸的移動藉助於至少一個致動器來實施，例如經由一個或多個壓電調節元件。初始位置與最終位置之間的移動路徑沿著氣體入口與氣體出口之間的方向延伸。如在基座旋轉的持續時間內所觀察到，基板晶圓的橫截面的較薄邊緣在初始位置處與氣體入口具有最小距離，且在最終位置處與氣體入口具有最大距離。
從初始位置到最終位置的移動路徑的長度較佳不小於當基座的外周與預熱環的內周同心佈置時所存在的間隙寬度的30%且不大於該間隙寬度的130%。移動路徑的長度較佳與橫截面的較厚邊緣處與較薄邊緣處的厚度差成比例。
基座較佳以30 rpm至60 rpm的旋轉速度旋轉。在此旋轉速度下，基座的移動運動的時間週期為1秒至2秒。
較佳地，在磊晶層沉積之前測量基板晶圓的形狀，並使沉積的製程參數，例如移動運動的速度及沖洗氣體的流速，適應於該形狀。
移動運動的速度可以是實質上恆定的，或者根據沿基板晶圓圓周的厚度變化分佈而變化。
沖洗氣體的流速較佳不小於5 slm且不大於30 slm，該流速與沉積氣體的稀釋共同決定作用的徑向範圍。其可以是恆定的，或者根據沿基板晶圓圓周的厚度變化分佈而變化。
基板晶圓由半導體材料構成，較佳由單晶矽以及沉積在基板晶圓正面上的磊晶層構成。基板晶圓的直徑較佳至少200毫米，特別佳至少300毫米。
沉積氣體包含含有半導體材料的化合物，例如矽烷或氯矽烷，例如三氯矽烷，且沖洗氣體較佳包含氫。
在磊晶層沉積期間，根據本發明的支撐軸的週期性移動不需要連續地進行。它也可以僅暫時地進行。因此，根據本發明另一實施態樣，係在支撐軸不週期性移動的情況下沉積磊晶層直到特定的層厚度，且隨後在支撐軸根據本發明移動的同時繼續磊晶層的沉積。該過程也可以如下方式修改：在支撐軸週期性地移動的同時使磊晶層開始沉積，以及磊晶層的沉積在其上繼續，而支撐軸不移動。當基板晶圓的楔形相對較不明顯時，實施這些實施態樣中之一者是特別有利的。
該目的還藉由一種在半導體材料的基板晶圓上沉積磊晶層的設備來實現，該設備包含： 基座， 預熱環， 支撐軸， 至少一個用於移動該支撐軸的致動器，以及 控制裝置，被配置成用於藉由該致動器使該支撐軸沿著從氣體入口到氣體出口的方向週期性地移動。
根據一較佳實施態樣，該設備還包含用於使支撐軸傾斜的至少一個致動器。在支撐軸傾斜之後，支撐軸的旋轉軸線不再是垂直的，而是朝向預熱環傾斜。
下文將參照附圖更詳細地描述本發明。
圖1以截面圖示出在半導體材料的基板晶圓上沉積磊晶層的設備，其適於實施根據本發明的方法。該沉積設備20的反應空間在頂部由上圓頂17界定，且在底部由下圓頂18界定。支撐軸9伸入反應空間的中部，支撐臂10從該支撐軸9的上部分支。支撐臂10支撐基座2，在磊晶層沉積期間基板晶圓1置於該基座上。在所示的實施態樣中，在裝載沉積設備20的過程中，將基板晶圓1放置在升降軸11上，並藉由降低升降軸11來將其放置在基座2上。預熱環3設置在沉積設備的側壁與基座2之間。沉積氣體從氣體入口15a至氣體出口16a通過基板晶圓面向上圓頂17的正面上方，該氣體入口15a至與氣體出口16a係佈置在沉積設備的側壁處。此外，還提供沖洗氣體的相應的氣體入口15b和氣體出口16b，沖洗氣體通過預熱環3與基座2下方的反應空間。箭頭指示氣流的流動方向。根據預熱環與基座之間的間隙5的寬度，一部分沖洗氣體進入沉積氣體流並稀釋該沉積氣體。反應空間由燈組19從外部加熱，燈組經由上圓頂17及下圓頂18引入輻射能。沉積設備20的下圓頂18經由波紋管（bellows）25連接到底座12，以便允許支撐軸9的移動，並密封由此提供的內部空間而防止周圍大氣流入。
該設備之一特別特徵是控制裝置21，其配置為藉由至少一個致動器13沿著從氣體入口15a、15b到氣體出口16a、16b的方向週期性地移動支撐軸9。所示實施態樣具有二個致動器13及14，它們以相同類型的致動方式（activation）移動支撐軸9。此外，當致動方式不同時，支撐軸9的傾斜也是可能的。在傾斜期間，支撐軸9的旋轉軸線22從垂直方向朝向預熱環3傾斜。例如，支撐軸9的另外的傾斜可以是有用的，以便在如果基板晶圓1沒有如預期水平地置於基座2上時，將基板晶圓調整至水平位置。
因此，還有利的是，提供具有影像處理8的相機系統7以便檢查基板晶圓1的位置。圖2中所示的相機系統7包含相機，用於在基座2藉由支撐軸9旋轉的期間觀察圖像區段6。圖像區段6獲得徑向延伸區域，該區域較佳包括基板晶圓1的外周的一區段、基座2的外周的一區段、以及預熱環3的內周的一區段，並因此還包含基座2與預熱環3之間的間隙5的一區段。基板晶圓1置於基座2的凹穴中，位於支承面4上，使得基板晶圓1的背面23與基座2的底部24具有一距離。藉由影像處理8，評估包含在圖像區段6中的資訊，特別是關於間隙5的寬度以及相機系統7與基座2的距離。藉由控制裝置21，檢查基座2的佈置是否存在錯誤，並且如果合適則產生信號，該信號使支撐軸9傾斜到使得基板晶圓從錯誤佈置移動到預期的水平位置的程度。
根據本發明，支撐軸沿著從初始位置到最終位置再回到初始位置的移動路徑週期性地移動。圖3中示出這種運動的開始（上面）及結束（下面），直至支撐軸9的最終位置。基板晶圓1居中地置於基座2的支承面上。它具有楔形橫截面，該橫截面具有較薄邊緣26及較厚邊緣27。在基座1的旋轉過程中，較薄邊緣在支撐軸9的初始位置具有距氣體入口15a、15b的最小距離，並且在支撐軸9的最終位置具有距氣體入口15a、15b的最大距離。由於支撐軸9的移動，在支撐軸9的初始位置處，預熱環3與基座2之間的間隙5在氣體入口15a、15b的一側較小，且被沿著如分支箭頭所示的箭頭進入基座上方空間的沖洗氣體稀釋的效果較小。在基座2的旋轉期間，當基板晶圓的較厚邊緣進入氣體入口15a、15b附近時，間隙5較大，且稀釋效果也較大。這意味著，與基板晶圓1的較厚邊緣27的區域相比，在較薄邊緣26的區域中總體上沉積更多的材料。
圖4表示具有沉積的磊晶層的基板晶圓的橫截面（下圖）與基板晶圓的橫截面（上圖）相比改變的方式。磊晶層28同樣具有楔形橫截面，但該橫截面與基板晶圓1的橫截面互補，使得塗覆的基板晶圓在理想情況下具有平面平行的側面。
1:基板晶圓 2:基座 3:預熱環 4:支承面 5:間隙 6:圖像區段 7:相機系統 8:影像處理 9:支撐軸 10:支撐臂 11:升降軸 12:底座 13:致動器 14:致動器 15a、15b:氣體入口 16a、16b:氣體出口 17:上圓頂 18:下圓頂 19:燈組 20:沉積設備 21:控制裝置 22:旋轉軸 23:背面 24:底部 25:波紋管 26:較薄邊緣 27:較厚邊緣 28:磊晶層
圖1以截面圖示出一種適於實施根據本發明的方法的設備。 圖2示出該設備的進一步細節。 圖3示出在基座旋轉180°的過程中支撐軸的移動的開始和結束。 圖4為了比較而示出楔形基板晶圓的橫截面與根據本發明塗覆的基板晶圓的橫截面。
1:基板晶圓
2:基座
3:預熱環
5:間隙
9:支撐軸
15a、15b:氣體入口
18:下圓頂
26:較薄邊緣
27:較厚邊緣

Claims (7)

  1. 一種在半導體材料的基板晶圓上沉積磊晶層的方法，該基板晶圓具有楔形的橫截面，該楔形的橫截面具有一較薄及一較厚的邊緣，該方法包含：將該基板晶圓和一基座佈置在沉積設備中，使得該基板晶圓同心地置於該基座上，且該基座係由支撐軸固持；以一個時間週期旋轉該支撐軸；使沉積氣體在從氣體入口到氣體出口的方向上通過該基板晶圓上方；使沖洗氣體(flushing gas)以一流速沿預熱環下側及該基座下側通過；使該支撐軸在該時間週期沿著移動路徑在從初始位置到最終位置再回到初始位置的方向上移動，其中在該初始位置處，該較薄邊緣與該氣體入口具有最小的距離，且在該最終位置處，該較薄邊緣與該氣體入口具有最大的距離。
  2. 如請求項1所述的方法，其中，該移動路徑從該初始位置到該最終位置的長度與該橫截面的較厚邊緣處與較薄邊緣處的厚度差成比例。
  3. 如請求項1或2所述的方法，其中在沉積磊晶層之前測量該基板晶圓的形狀，並根據該形狀改變該支撐軸移動的速度。
  4. 如請求項1或2所述的方法，其中在沉積磊晶層之前測量該基板晶圓的形狀，並根據該形狀改變該沖洗氣體的流速。
  5. 如請求項1或2所述的方法，其中，該支撐軸朝向該預熱環傾斜。
  6. 一種在半導體材料的基板晶圓上沉積磊晶層的設備，其包含：基座，預熱環，支撐軸，至少一個用於移動該支撐軸的致動器，控制裝置，被配置成用於藉由該致動器使該支撐軸沿著從氣體入口到氣體出口的方向週期性地移動，以及至少一個另外的致動器，用於使該支撐軸朝向該預熱環傾斜。
  7. 如請求項6所述的設備，其中，具有相機系統，用於觀察該基板晶圓的外邊緣以及該基座與該預熱環之間的間隙。
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