TWI791470B - 微影系統，計量方法，及電腦程式產品 - Google Patents

微影系統，計量方法，及電腦程式產品 Download PDF

Info

Publication number
TWI791470B
TWI791470B TW106139082A TW106139082A TWI791470B TW I791470 B TWI791470 B TW I791470B TW 106139082 A TW106139082 A TW 106139082A TW 106139082 A TW106139082 A TW 106139082A TW I791470 B TWI791470 B TW I791470B
Authority
TW
Taiwan
Prior art keywords
metrology
tool
lithography system
integrated
metrology tool
Prior art date
Application number
TW106139082A
Other languages
English (en)
Chinese (zh)
Other versions
TW201826041A (zh
Inventor
伊蘭 阿密特
羅伊 弗克維奇
里蘭 葉魯夏米
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201826041A publication Critical patent/TW201826041A/zh
Application granted granted Critical
Publication of TWI791470B publication Critical patent/TWI791470B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Slot Machines And Peripheral Devices (AREA)
TW106139082A 2016-11-14 2017-11-13 微影系統，計量方法，及電腦程式產品 TWI791470B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662421932P 2016-11-14 2016-11-14
US62/421,932 2016-11-14
PCT/US2017/047742 WO2018089076A1 (en) 2016-11-14 2017-08-21 Lithography systems with integrated metrology tools having enhanced functionalities
WOPCT/US17/47742 2017-08-21
??PCT/US17/47742 2017-08-21

Publications (2)

Publication Number Publication Date
TW201826041A TW201826041A (zh) 2018-07-16
TWI791470B true TWI791470B (zh) 2023-02-11

Family

ID=62109931

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106139082A TWI791470B (zh) 2016-11-14 2017-11-13 微影系統，計量方法，及電腦程式產品

Country Status (7)

Country Link
US (1) US10331050B2 (https=)
JP (1) JP6877541B2 (https=)
KR (1) KR102271217B1 (https=)
CN (1) CN109923480B (https=)
SG (1) SG11201903730XA (https=)
TW (1) TWI791470B (https=)
WO (1) WO2018089076A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1561541A (zh) * 2001-10-30 2005-01-05 先进微装置公司 使用整合式度量的串级控制方法及装置
JP2006128186A (ja) * 2004-10-26 2006-05-18 Nikon Corp 重ね合わせ検査システム
TW200618153A (en) * 2004-09-14 2006-06-01 Advanced Micro Devices Inc Method and system for calibrating integrated metrology systems and stand-alone metrology systems that acquire wafer state data
TW201428418A (zh) * 2012-11-09 2014-07-16 Kla Tencor Corp 用以提供顯示對掃描器聚焦改變之高靈敏度之目標設計的方法及系統
US20160131983A1 (en) * 2014-09-03 2016-05-12 Kla-Tencor Corporation Optimizing the utilization of metrology tools

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7089075B2 (en) * 2001-05-04 2006-08-08 Tokyo Electron Limited Systems and methods for metrology recipe and model generation
US6978189B1 (en) * 2002-05-28 2005-12-20 Advanced Micro Devices, Inc. Matching data related to multiple metrology tools
US7289864B2 (en) 2004-07-12 2007-10-30 International Business Machines Corporation Feature dimension deviation correction system, method and program product
NL2008702A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Computational process control.
NL2009853A (en) * 2011-12-23 2013-06-26 Asml Netherlands Bv Methods and apparatus for measuring a property of a substrate.
US9330985B2 (en) * 2012-03-13 2016-05-03 GlobalFoundries, Inc. Automated hybrid metrology for semiconductor device fabrication
US9576861B2 (en) 2012-11-20 2017-02-21 Kla-Tencor Corporation Method and system for universal target based inspection and metrology
SG11201703585RA (en) 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
JP6440498B2 (ja) 2015-01-05 2018-12-19 キヤノン株式会社 リソグラフィシステム、リソグラフィ方法、および物品の製造方法
WO2017146785A1 (en) 2016-02-25 2017-08-31 Kla-Tencor Corporation Analyzing root causes of process variation in scatterometry metrology

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1561541A (zh) * 2001-10-30 2005-01-05 先进微装置公司 使用整合式度量的串级控制方法及装置
TW200618153A (en) * 2004-09-14 2006-06-01 Advanced Micro Devices Inc Method and system for calibrating integrated metrology systems and stand-alone metrology systems that acquire wafer state data
JP2006128186A (ja) * 2004-10-26 2006-05-18 Nikon Corp 重ね合わせ検査システム
TW201428418A (zh) * 2012-11-09 2014-07-16 Kla Tencor Corp 用以提供顯示對掃描器聚焦改變之高靈敏度之目標設計的方法及系統
US20160131983A1 (en) * 2014-09-03 2016-05-12 Kla-Tencor Corporation Optimizing the utilization of metrology tools

Also Published As

Publication number Publication date
JP2019534482A (ja) 2019-11-28
US10331050B2 (en) 2019-06-25
KR102271217B1 (ko) 2021-06-30
US20180299791A1 (en) 2018-10-18
JP6877541B2 (ja) 2021-05-26
TW201826041A (zh) 2018-07-16
KR20190072664A (ko) 2019-06-25
SG11201903730XA (en) 2019-05-30
CN109923480B (zh) 2024-05-07
WO2018089076A1 (en) 2018-05-17
CN109923480A (zh) 2019-06-21

Similar Documents

Publication Publication Date Title
TWI651789B (zh) 用於對疊對誤差之前饋和反饋校正之統計疊對誤差預測、根本原因分析及程序控制
TWI665745B (zh) 幾何引發重疊之分解分析及用於改善重疊控制之分解分析之利用
JP2019113873A (ja) 問題のある高度プロセス制御パラメータの検出及び訂正のためのシステム
TWI451511B (zh) 進階製程控制最佳化
US20150241790A1 (en) System and Method for Field-By-Field Overlay Process Control Using Measured and Estimated Field Parameters
CN111542916A (zh) 使用设计补偿扫描电子显微镜束的失真引起的计量误差
US9029810B2 (en) Using wafer geometry to improve scanner correction effectiveness for overlay control
TWI849172B (zh) 使用量子計算之具有動態採樣計劃、最佳化晶圓測量路徑及最佳化晶圓運輸之製造廠管理
TW201220353A (en) Method and system for providing process tool correctables
TWI738976B (zh) 程序控制系統與用於判定前饋資料之系統及方法
TW201727381A (zh) 預測微影裝置之性能之方法、微影裝置之校正及器件製造方法
CN104412359B (zh) 使用不对称嵌入式成像目标的聚焦监测方法
TWI791470B (zh) 微影系統，計量方法，及電腦程式產品
TWI748110B (zh) 在成像技術中估計振幅及相位不對稱性以用於在疊對計量中達到高精準度
CN112880987B (zh) 光学元件的偏振性能检测方法及检测系统
Felix et al. Overlay improvement roadmap: strategies for scanner control and product disposition for 5-nm overlay
US11971664B2 (en) Reducing device overlay errors
US12535744B2 (en) Overlay estimation based on optical inspection and machine learning
Subramany et al. CPE run-to-run overlay control for high volume manufacturing
TWI754094B (zh) 根據製程變化之計量量測參數的快速調整
TW202438857A (zh) 製程腔室組件溫度之判定
KR100915764B1 (ko) Ｐｒ 패턴 형성 방법 및 ｐｒ 패턴 형성 장치
He et al. Calculation method of intra-field CDU and inter-field CDU revisited for advanced immersion lithography