TWI791470B - 微影系統，計量方法，及電腦程式產品 - Google Patents

微影系統，計量方法，及電腦程式產品 Download PDF

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Publication number
TWI791470B
TWI791470B TW106139082A TW106139082A TWI791470B TW I791470 B TWI791470 B TW I791470B TW 106139082 A TW106139082 A TW 106139082A TW 106139082 A TW106139082 A TW 106139082A TW I791470 B TWI791470 B TW I791470B
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TW
Taiwan
Prior art keywords
metrology
tool
lithography system
integrated
metrology tool
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TW106139082A
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English (en)
Chinese (zh)
Other versions
TW201826041A (zh
Inventor
伊蘭 阿密特
羅伊 弗克維奇
里蘭 葉魯夏米
Original Assignee
美商克萊譚克公司
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Publication of TW201826041A publication Critical patent/TW201826041A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Slot Machines And Peripheral Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW106139082A 2016-11-14 2017-11-13 微影系統，計量方法，及電腦程式產品 TWI791470B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662421932P 2016-11-14 2016-11-14
US62/421,932 2016-11-14
PCT/US2017/047742 WO2018089076A1 (en) 2016-11-14 2017-08-21 Lithography systems with integrated metrology tools having enhanced functionalities
??PCT/US17/47742 2017-08-21
WOPCT/US17/47742 2017-08-21

Publications (2)

Publication Number Publication Date
TW201826041A TW201826041A (zh) 2018-07-16
TWI791470B true TWI791470B (zh) 2023-02-11

Family

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Family Applications (1)

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TW106139082A TWI791470B (zh) 2016-11-14 2017-11-13 微影系統，計量方法，及電腦程式產品

Country Status (7)

Country Link
US (1) US10331050B2 (enExample)
JP (1) JP6877541B2 (enExample)
KR (1) KR102271217B1 (enExample)
CN (1) CN109923480B (enExample)
SG (1) SG11201903730XA (enExample)
TW (1) TWI791470B (enExample)
WO (1) WO2018089076A1 (enExample)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1561541A (zh) * 2001-10-30 2005-01-05 先进微装置公司 使用整合式度量的串级控制方法及装置
JP2006128186A (ja) * 2004-10-26 2006-05-18 Nikon Corp 重ね合わせ検査システム
TW200618153A (en) * 2004-09-14 2006-06-01 Advanced Micro Devices Inc Method and system for calibrating integrated metrology systems and stand-alone metrology systems that acquire wafer state data
TW201428418A (zh) * 2012-11-09 2014-07-16 Kla Tencor Corp 用以提供顯示對掃描器聚焦改變之高靈敏度之目標設計的方法及系統
US20160131983A1 (en) * 2014-09-03 2016-05-12 Kla-Tencor Corporation Optimizing the utilization of metrology tools

Family Cites Families (10)

* Cited by examiner, † Cited by third party
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WO2002091248A1 (en) * 2001-05-04 2002-11-14 Therma-Wave, Inc. Systems and methods for metrology recipe and model generation
US6978189B1 (en) * 2002-05-28 2005-12-20 Advanced Micro Devices, Inc. Matching data related to multiple metrology tools
US7289864B2 (en) * 2004-07-12 2007-10-30 International Business Machines Corporation Feature dimension deviation correction system, method and program product
NL2008702A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Computational process control.
NL2009853A (en) * 2011-12-23 2013-06-26 Asml Netherlands Bv Methods and apparatus for measuring a property of a substrate.
US9330985B2 (en) * 2012-03-13 2016-05-03 GlobalFoundries, Inc. Automated hybrid metrology for semiconductor device fabrication
US9576861B2 (en) * 2012-11-20 2017-02-21 Kla-Tencor Corporation Method and system for universal target based inspection and metrology
CN112698551B (zh) * 2014-11-25 2024-04-23 科磊股份有限公司 分析及利用景观
JP6440498B2 (ja) 2015-01-05 2018-12-19 キヤノン株式会社 リソグラフィシステム、リソグラフィ方法、および物品の製造方法
WO2017146785A1 (en) 2016-02-25 2017-08-31 Kla-Tencor Corporation Analyzing root causes of process variation in scatterometry metrology

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1561541A (zh) * 2001-10-30 2005-01-05 先进微装置公司 使用整合式度量的串级控制方法及装置
TW200618153A (en) * 2004-09-14 2006-06-01 Advanced Micro Devices Inc Method and system for calibrating integrated metrology systems and stand-alone metrology systems that acquire wafer state data
JP2006128186A (ja) * 2004-10-26 2006-05-18 Nikon Corp 重ね合わせ検査システム
TW201428418A (zh) * 2012-11-09 2014-07-16 Kla Tencor Corp 用以提供顯示對掃描器聚焦改變之高靈敏度之目標設計的方法及系統
US20160131983A1 (en) * 2014-09-03 2016-05-12 Kla-Tencor Corporation Optimizing the utilization of metrology tools

Also Published As

Publication number Publication date
KR102271217B1 (ko) 2021-06-30
CN109923480A (zh) 2019-06-21
JP2019534482A (ja) 2019-11-28
SG11201903730XA (en) 2019-05-30
KR20190072664A (ko) 2019-06-25
JP6877541B2 (ja) 2021-05-26
TW201826041A (zh) 2018-07-16
US10331050B2 (en) 2019-06-25
WO2018089076A1 (en) 2018-05-17
US20180299791A1 (en) 2018-10-18
CN109923480B (zh) 2024-05-07

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