TWI790196B - 洗淨液、基板洗淨方法及半導體元件的製造方法 - Google Patents
洗淨液、基板洗淨方法及半導體元件的製造方法 Download PDFInfo
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- TWI790196B TWI790196B TW105140737A TW105140737A TWI790196B TW I790196 B TWI790196 B TW I790196B TW 105140737 A TW105140737 A TW 105140737A TW 105140737 A TW105140737 A TW 105140737A TW I790196 B TWI790196 B TW I790196B
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- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- VHLDQAOFSQCOFS-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CCO)(CCO)CCO VHLDQAOFSQCOFS-UHFFFAOYSA-M 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- KYMBYSLLVAOCFI-UHFFFAOYSA-N thiamine Chemical compound CC1=C(CCO)SCN1CC1=CN=C(C)N=C1N KYMBYSLLVAOCFI-UHFFFAOYSA-N 0.000 description 1
- 229960003495 thiamine Drugs 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229940113082 thymine Drugs 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- VRFQDZQUTDJJMF-UHFFFAOYSA-N toluene;2h-triazole Chemical compound C1=CNN=N1.CC1=CC=CC=C1 VRFQDZQUTDJJMF-UHFFFAOYSA-N 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- LDGFRUUNCRYSQK-UHFFFAOYSA-N triazin-4-ylmethanediamine Chemical compound NC(N)C1=CC=NN=N1 LDGFRUUNCRYSQK-UHFFFAOYSA-N 0.000 description 1
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229940116269 uric acid Drugs 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0047—Other compounding ingredients characterised by their effect pH regulated compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/08—Liquid soap, e.g. for dispensers; capsuled
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015242708 | 2015-12-11 | ||
JP2015-242708 | 2015-12-11 |
Publications (2)
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TW201732028A TW201732028A (zh) | 2017-09-16 |
TWI790196B true TWI790196B (zh) | 2023-01-21 |
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TW105140737A TWI790196B (zh) | 2015-12-11 | 2016-12-09 | 洗淨液、基板洗淨方法及半導體元件的製造方法 |
Country Status (4)
Country | Link |
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JP (1) | JP6629880B2 (ko) |
KR (1) | KR102121759B1 (ko) |
TW (1) | TWI790196B (ko) |
WO (1) | WO2017099211A1 (ko) |
Families Citing this family (8)
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SG11201908616PA (en) * | 2017-03-24 | 2019-10-30 | Fujifilm Electronic Materials Usa Inc | Cleaning compositions for removing residues on semiconductor substrates |
WO2019044463A1 (ja) * | 2017-08-31 | 2019-03-07 | 富士フイルム株式会社 | 処理液、キット、基板の洗浄方法 |
US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
JP7065763B2 (ja) * | 2018-12-27 | 2022-05-12 | 富士フイルム株式会社 | 薬液、被処理物の処理方法 |
WO2021039701A1 (ja) * | 2019-08-29 | 2021-03-04 | 富士フイルム株式会社 | 処理液 |
KR20210032606A (ko) | 2019-09-16 | 2021-03-25 | 삼성디스플레이 주식회사 | 금속 마스크, 이의 제조 방법, 및 표시 패널 제조 방법 |
WO2022176663A1 (ja) * | 2021-02-22 | 2022-08-25 | 富士フイルム株式会社 | 洗浄液、半導体基板の洗浄方法 |
CN114574297A (zh) * | 2022-03-09 | 2022-06-03 | 张家港安储科技有限公司 | 一种用于碳化硅半导体制程中的清洗液组合物 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010034312A1 (en) * | 2000-03-24 | 2001-10-25 | Naoshi Imai | Aqueous hydroxylamine solution |
JP2006269677A (ja) * | 2005-03-23 | 2006-10-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
TW200639594A (en) * | 2005-03-11 | 2006-11-16 | Kanto Kagaku | Composition for photoresist stripping solution and process of photoresist stripping |
TW201239085A (en) * | 2011-03-16 | 2012-10-01 | Air Prod & Chem | Cleaning formulations and method of using the cleaning formulations |
TW201527523A (zh) * | 2013-12-06 | 2015-07-16 | Fujifilm Electronic Materials | 用來移除表面殘餘物的清洗調配物 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001267282A (ja) * | 2000-03-21 | 2001-09-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US7166419B2 (en) * | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
US8357646B2 (en) * | 2008-03-07 | 2013-01-22 | Air Products And Chemicals, Inc. | Stripper for dry film removal |
JP5589968B2 (ja) | 2011-06-17 | 2014-09-17 | 信越半導体株式会社 | 半導体ウェーハの洗浄方法 |
-
2016
- 2016-12-09 KR KR1020187015299A patent/KR102121759B1/ko active IP Right Grant
- 2016-12-09 TW TW105140737A patent/TWI790196B/zh active
- 2016-12-09 JP JP2017555154A patent/JP6629880B2/ja active Active
- 2016-12-09 WO PCT/JP2016/086675 patent/WO2017099211A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010034312A1 (en) * | 2000-03-24 | 2001-10-25 | Naoshi Imai | Aqueous hydroxylamine solution |
TW200639594A (en) * | 2005-03-11 | 2006-11-16 | Kanto Kagaku | Composition for photoresist stripping solution and process of photoresist stripping |
JP2006269677A (ja) * | 2005-03-23 | 2006-10-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
TW201239085A (en) * | 2011-03-16 | 2012-10-01 | Air Prod & Chem | Cleaning formulations and method of using the cleaning formulations |
TW201527523A (zh) * | 2013-12-06 | 2015-07-16 | Fujifilm Electronic Materials | 用來移除表面殘餘物的清洗調配物 |
Also Published As
Publication number | Publication date |
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KR102121759B1 (ko) | 2020-06-11 |
WO2017099211A1 (ja) | 2017-06-15 |
TW201732028A (zh) | 2017-09-16 |
JP6629880B2 (ja) | 2020-01-15 |
KR20180077250A (ko) | 2018-07-06 |
JPWO2017099211A1 (ja) | 2018-09-20 |
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