TWI788410B - Wafer processing method - Google Patents

Wafer processing method Download PDF

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TWI788410B
TWI788410B TW107131420A TW107131420A TWI788410B TW I788410 B TWI788410 B TW I788410B TW 107131420 A TW107131420 A TW 107131420A TW 107131420 A TW107131420 A TW 107131420A TW I788410 B TWI788410 B TW I788410B
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wafer
sealing material
cutting groove
sealing
grinding
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TW107131420A
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TW201913870A (en
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鈴木克彦
伴祐人
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日商迪思科股份有限公司
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    • H—ELECTRICITY
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    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract

本發明係一種晶圓之加工方法，其課題為提供：通過含有被覆於晶圓表面之碳黑的封閉材而可實施校準工程之晶圓之加工方法者。 　　解決手段係於經由交叉所形成之複數的分割預定線所區劃之表面的各範圍，形成具有各複數的突起電極之裝置的晶圓之加工方法，其中，包含：自該晶圓的表面側，沿著該分割預定線，經由切削刀片而形成相當於裝置晶片之完成厚度之深度的切削溝的切削溝形成工程，和實施該切削溝形成工程之後，以封閉材而封閉包含該切削溝之該晶圓的表面之封閉工程，和實施該封閉工程之後，自該晶圓的背面側，至該裝置晶片之完成厚度為止，研削該晶圓而使該切削溝中之封閉材露出之研削工程，和實施研削工程之後，自該晶圓的表面側，經由紅外線攝影手段而透過該封閉材，攝影晶圓的表面側而查出對準標記，依據該對準標記而查出欲雷射加工之該分割預定線的校準工程，和實施該校準工程之後，自該晶圓表面側，沿著該分割預定線，照射對於該封閉材而言具有吸收性之波長的雷射束，經由剝蝕加工而分割為經由該封閉材加以圍繞表面及4側面之各個的裝置晶片之分割工程。The present invention is a method of processing a wafer, and its object is to provide a method of processing a wafer which can perform alignment work by using a sealing material containing carbon black coated on the surface of the wafer. The solution is a wafer processing method for forming a device having a plurality of protruding electrodes in each range of the surface demarcated by a plurality of dividing lines formed by crossing, which includes: from the surface side of the wafer, A cutting groove forming process of forming a cutting groove having a depth corresponding to the finished thickness of the device wafer through a cutting blade along the planned division line, and sealing the cutting groove including the cutting groove with a sealing material after performing the cutting groove forming process The surface sealing process of the wafer, and the grinding process of grinding the wafer to expose the sealing material in the cutting groove from the back side of the wafer to the finished thickness of the device wafer after the sealing process is performed, After performing the grinding process, from the surface side of the wafer, through the sealing material through the infrared photography means, the surface side of the wafer is photographed to detect the alignment mark, and the target to be laser processed is detected according to the alignment mark. The calibration process of the planned dividing line, and after the calibration process is performed, a laser beam having an absorbing wavelength for the sealing material is irradiated along the planned dividing line from the wafer surface side, and the process is performed by ablation processing. Segmentation is a process of dividing device wafers that surround the surface and each of the four side surfaces through the sealing material.

Description

晶圓之加工方法Wafer processing method

本發明係有關加工晶圓而形成5S模製封裝的晶圓之加工方法。The present invention relates to a processing method for processing wafers to form 5S molded and packaged wafers.

作為實現LSI或NAND型快閃記憶體等之各種裝置的小型化及高密度安裝化之構造，例如將以晶片尺寸而封裝化裝置晶片之晶片尺寸封裝(CSP)提供於實用，廣泛使用於行動電話或智慧型手機等。更且，近年係在此CSP之中，開發有不僅晶片的表面而將全側面，以封閉材進行封閉之CSP，所謂5S模製封裝而加以實用化。As a structure to realize the miniaturization and high-density mounting of various devices such as LSI and NAND flash memory, for example, the chip size package (CSP) that packages the device chip at the chip size is provided for practical use, and is widely used in mobile applications. phone or smartphone etc. Furthermore, in recent years, among these CSPs, a CSP in which not only the surface of the chip but also the entire side is sealed with a sealing material, a so-called 5S molded package, has been developed and put into practical use.

以往的5S模製封裝係經由以下的工程而加以製作。 　　(1) 於半導體晶圓(以下，有略稱為晶圓之情況)之表面，形成稱為裝置(電路)及突起電極之外部連接端子。 　　(2) 自晶圓的表面側，沿著分割預定線而切削晶圓，形成相當於裝置晶片的完成厚度之深度的切削溝。 　　(3) 以摻入碳黑之封閉材而封閉晶圓的表面。 　　(4) 將晶圓的背面側，研削至裝置晶片的完成厚度而使切削溝中之封閉材露出。 　　(5) 晶圓表面係因以摻入碳黑之封閉材而加以封閉之故，除去晶圓表面的外周部分之封閉材而使標靶圖案等之對準標記露出，依據此對準標記而實施查出欲切削之分割預定線的校準。 　　(6) 依據校準，自晶圓的表面側，沿著分割預定線而切削晶圓，分割成以封閉材而封閉表面及全側面之5S模製封裝。Conventional 5S molded packages are produced through the following processes. (1) External connection terminals called devices (circuits) and protruding electrodes are formed on the surface of semiconductor wafers (hereinafter, referred to as wafers for short). (2) From the surface side of the wafer, the wafer is cut along the planned dividing line to form cutting grooves with a depth equivalent to the finished thickness of the device wafer. (3) Seal the surface of the wafer with a sealing material doped with carbon black. (4) Grind the back side of the wafer to the finished thickness of the device wafer to expose the sealing material in the cutting groove. (5) The surface of the wafer is sealed with a sealing material doped with carbon black. The sealing material on the outer peripheral part of the wafer surface is removed to expose the alignment mark of the target pattern, etc., according to the alignment mark. Carry out the calibration to detect the planned dividing line to be cut. (6) According to the calibration, cut the wafer from the surface side of the wafer along the predetermined dividing line, and divide it into a 5S molded package with the sealing material sealing the surface and the whole side.

如上述，晶圓的表面係以包含碳黑之封閉材而加以封閉之故，形成於晶圓表面的裝置等係完全無法以肉眼看見。為了解決此問題而可進行校準，而如在上述(5)所記載地，本申請人係開發除去晶圓表面的封閉材之外周部分而使標靶圖案等之對準標記露出，依據此對準標記而查出欲切削之分割預定線，執行校準的技術(參照日本特開2013-074021號公報及日本特開2016-015438號公報)。 [先前技術文獻] [專利文獻]As mentioned above, since the surface of the wafer is sealed with a sealing material containing carbon black, devices and the like formed on the surface of the wafer cannot be seen with naked eyes at all. In order to solve this problem, alignment can be performed, and as described in (5) above, the present applicant has developed to remove the outer peripheral portion of the sealing material on the wafer surface to expose the alignment marks such as the target pattern, and based on this The technique of detecting the planned dividing line to be cut by using the quasi-mark and performing calibration (refer to Japanese Patent Laid-Open No. 2013-074021 and Japanese Patent Laid-Open No. 2016-015438). [Prior Art Document] [Patent Document]

[專利文獻1] 日本特開2013-074021號公報 　　[專利文獻2] 日本特開2016-015438號公報[Patent Document 1] Japanese Patent Laid-Open No. 2013-074021 [Patent Document 2] Japanese Patent Laid-Open No. 2016-015438

[發明欲解決之課題][Problem to be solved by the invention]

但在記載於上述公開公報之校準方法中，取代於切割用之切削刀片，而將磨邊修整用之寬度廣的切削刀片安裝於心軸，除去晶圓的外周部分之封閉材之工程則必要，而經由切削刀片的交換及磨邊修整，除去外周部分之封閉材的工時則耗費，有著生產性差的問題。However, in the calibration method described in the above publication, instead of the cutting blade for dicing, a wide cutting blade for edging and trimming is attached to the mandrel, and the process of removing the sealing material at the outer peripheral portion of the wafer is necessary. , and through the exchange of cutting blades and edge grinding, it takes a lot of man-hours to remove the sealing material at the outer peripheral part, and there is a problem of poor productivity.

本發明係有鑑於如此的點所作為的構成，而其目的係提供：通過包含被覆於晶圓表面的碳黑之封閉材而可實施校準工程之晶圓的加工方法者。 [為了解決課題之手段]The present invention is constituted in view of such points, and an object of the present invention is to provide a method for processing a wafer that can perform an alignment process by using a sealing material including carbon black coated on the surface of the wafer. [Means to solve the problem]

當根據本發明時，提供：於經由交叉所形成之複數的分割預定線所區劃之表面的各範圍，形成具有各複數的突起電極之裝置的晶圓之加工方法，其特徵為具備：自該晶圓的表面側，沿著該分割預定線，經由切削刀片而形成相當於裝置晶片之完成厚度之深度的切削溝的切削溝形成工程，和實施該切削溝形成工程之後，以封閉材而封閉包含該切削溝之該晶圓的表面之封閉工程，和實施該封閉工程之後，自該晶圓的背面側，至該裝置晶片之完成厚度為止，研削該晶圓而使該切削溝中之封閉材露出之研削工程，和實施研削工程之後，自該晶圓的表面側，經由紅外線攝影手段而透過該封閉材，攝影晶圓的表面側而查出對準標記，依據該對準標記而查出欲雷射加工之該分割預定線的校準工程，和實施該校準工程之後，自該晶圓表面側，沿著該分割預定線，照射對於該封閉材而言具有吸收性之波長的雷射束，經由剝蝕加工而分割為經由該封閉材加以圍繞表面及4側面之各個的裝置晶片之分割工程；在該封閉工程係經由具有該紅外線攝影手段所受光之紅外線則呈透過之透過性的封閉材，而封閉該晶圓的表面之晶圓的加工方法。According to the present invention, there is provided: a wafer processing method for forming a device having a plurality of protruding electrodes in each range of the surface demarcated by a plurality of planned dividing lines formed by crossing, which is characterized by: On the surface side of the wafer, a cutting groove forming process of forming a cutting groove having a depth equivalent to the complete thickness of the device wafer through a cutting blade along the planned dividing line, and sealing with a sealing material after performing the cutting groove forming process The sealing process of the surface of the wafer including the cutting groove, and after performing the sealing process, grinding the wafer from the back side of the wafer to the finished thickness of the device wafer to seal the cutting groove The grinding process where the material is exposed, and after the grinding process is carried out, from the surface side of the wafer, through the sealing material through infrared photography means, the surface side of the wafer is photographed to detect the alignment mark, and the alignment mark is checked. Calibration process of the planned division line to be laser processed, and after performing the calibration process, irradiating laser with a wavelength that is absorbing to the sealing material along the planned division line from the wafer surface side The beam is divided into device chips that are surrounded by the sealing material on the surface and the 4 sides through the ablation process; in the sealing process, the infrared rays received by the infrared photography means are transparent through the sealing. A wafer processing method for enclosing the surface of the wafer.

理想係在校準工程所使用之紅外線攝影手段係包含InGaAs攝影元件。 [發明效果]Ideally, the infrared photography method used in the calibration project includes InGaAs photography elements. [Invention effect]

當根據本發明之晶圓的加工方法時，因作成呈以紅外線攝影手段所受光的紅外線則呈透過之封閉材而封閉晶圓的表面，再經由紅外線攝影手段而查出透過封閉材，查出而形成於晶圓之對準標記，依據對準標記而可實施校準之故，無須如以往，除去晶圓表面之外周部分的封閉材之情況，而可簡單地實施校準工程。因而，自晶圓的表面側，將對於封閉材而言具有吸收性的波長之雷射束，沿著分割預定線而照射，再經由剝蝕加工而可將晶圓分割為各個的裝置晶片者。When according to the wafer processing method of the present invention, the surface of the wafer is sealed by making the sealing material through which the infrared rays received by the infrared photography means pass through, and then detected by the infrared photography means through the sealing material and detected. Since the alignment marks formed on the wafer can be calibrated based on the alignment marks, it is not necessary to remove the sealing material on the outer periphery of the wafer surface as in the past, and the alignment process can be easily performed. Therefore, from the surface side of the wafer, a laser beam having an absorbing wavelength to the sealing material is irradiated along the dividing line, and the wafer can be divided into individual device chips through ablation process.

以下，參照圖面而加以詳細說明本發明之實施形態。當參照圖1時，顯示適合於以本發明之加工方法而加工之半導體晶圓(以下，有單略稱為晶圓之情況)11之表面側斜視圖。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. When referring to FIG. 1 , it shows a front oblique view of a semiconductor wafer (hereinafter, simply referred to as a wafer) 11 suitable for processing by the processing method of the present invention.

在半導體晶圓11之表面11a中，將複數之分割預定線(切割道)13形成為格子狀，而對於經由正交之分割預定線13所區劃之各範圍，係形成有IC、LSI等之裝置15。On the surface 11a of the semiconductor wafer 11, a plurality of planned dividing lines (dicing lines) 13 are formed in a grid pattern, and for each area partitioned by the orthogonal planned dividing lines 13, IC, LSI, etc. are formed device 15.

對於各裝置15之表面係具有複數的電極凸塊(以下，有單略稱為突起電極之情況)17，而晶圓11係於其表面具備形成有備有各複數之突起電極17之複數的裝置15之裝置範圍19，和圍繞裝置範圍19之外周剩餘範圍21。The surface of each device 15 has a plurality of electrode bumps (hereinafter referred to simply as protruding electrodes) 17, and the wafer 11 has a plurality of protruding electrodes 17 formed on its surface. The device range 19 of the device 15 and the remaining range 21 around the device range 19 .

在本發明實施形態之晶圓的加工方法中，首先，作為第1工程，實施自晶圓11之表面側，沿著分割預定線13，經由切削刀片而形成相當於裝置晶片之完成厚度之深度的切削溝之切削溝形成工程。參照圖2而說明此切削溝形成工程。In the wafer processing method of the embodiment of the present invention, first, as the first process, from the surface side of the wafer 11, along the planned dividing line 13, through the cutting blade, the depth corresponding to the completed thickness of the device wafer is formed. The cutting groove formation project of the cutting groove. This cutting groove forming process will be described with reference to FIG. 2 .

切削單元10係具備：可拆裝於心軸12之前端部地加以安裝之切削刀片14，和具有攝影手段(攝影單元)18之校準單元16。攝影手段18係除了具有以可視光攝影之顯微鏡及攝影機之外，具備攝影紅外線畫像之紅外線攝影元件。在本實施形態中，作為紅外線攝影元件而採用InGaAs攝影元件。The cutting unit 10 includes a cutting blade 14 detachably attached to the front end of the mandrel 12 , and an alignment unit 16 having a photographing means (photographing unit) 18 . The photographing means 18 is equipped with an infrared photographing element for photographing infrared images in addition to a microscope and a video camera for photographing with visible light. In this embodiment, an InGaAs imaging element is used as an infrared imaging element.

在實施切削溝形成工程之前，首先由攝影單元18，以可視光而攝影晶圓11之表面，查出形成於各裝置15之標靶圖案等之對準標記，實施依據此對準標記而查出欲切削之分割預定線13的校準。Before implementing the cutting groove formation process, firstly, the imaging unit 18 photographs the surface of the wafer 11 with visible light, detects the alignment marks formed on the target patterns of each device 15, and performs inspection based on the alignment marks. Calibration of the planned dividing line 13 to be cut.

校準實施後，使高速旋轉於箭頭R1方向之切削刀片14，自晶圓11的表面11a側，沿著分割預定線13而切入至相當於裝置晶片之完成厚度之深度，經由將吸引保持晶圓11之未圖示之夾盤加工傳送至箭頭X1方向之時，實施沿著分割預定線13而形成切削溝23之切削溝形成工程。After the calibration is implemented, the cutting blade 14 rotating at high speed in the direction of the arrow R1 is cut from the surface 11a side of the wafer 11 along the planned dividing line 13 to a depth equivalent to the completed thickness of the device wafer, and the wafer is held by suction. 11. When the not-shown chuck processing is transferred to the arrow X1 direction, the cutting groove forming process of forming the cutting groove 23 along the planned dividing line 13 is carried out.

將此切削溝形成工程，各分割預定線13之間距算出傳送切削單元10於與加工傳送方向X1正交之方向的同時，沿著伸長於第1方向之分割預定線13而依序實施。The cutting groove forming process is carried out sequentially along the planned dividing lines 13 extending in the first direction while the distance between the planned dividing lines 13 is calculated and the cutting unit 10 is carried out in a direction perpendicular to the processing conveying direction X1.

接著，90°旋轉未圖示之夾盤之後，沿著伸長於正交於第1方向之第2方向的分割預定線13，依序實施同樣之切削溝形成工程。Next, after the chuck (not shown) is rotated by 90°, the same cutting groove forming process is sequentially carried out along the planned dividing line 13 extending in the second direction perpendicular to the first direction.

實施切削溝形成工程之後，如圖3所示，塗佈封閉材20於晶圓11之表面11a，實施以封閉材而封閉包含切削溝23之晶圓11的表面11a之封閉工程。封閉材20係有流動性之故，當實施封閉工程時，於切削溝23中，填充有封閉材20。After the groove formation process is performed, as shown in FIG. 3 , the sealing material 20 is coated on the surface 11 a of the wafer 11 , and the sealing process of sealing the surface 11 a of the wafer 11 including the groove 23 with the sealing material is performed. Because the sealing material 20 has fluidity, the cutting groove 23 is filled with the sealing material 20 when the sealing work is carried out.

作為封閉材20係作成以質量%，包含環氧樹脂或環氧樹脂+苯酚樹脂10.3%、二氧化矽填充料85.3%、碳黑0.1~0.2%、其他成分4.2~4.3%之組成。作為其他的成分係例如，包含金屬氫氧化物，三氧化二銻，二氧化矽等。The sealing material 20 is made by mass %, including 10.3% of epoxy resin or epoxy resin + phenol resin, 85.3% of silica filler, 0.1-0.2% of carbon black, and 4.2-4.3% of other components. Other components include, for example, metal hydroxides, antimony trioxide, silicon dioxide, and the like.

由如此組成之封閉材20而被覆晶圓11的表面11a，封閉晶圓11的表面11a時，經由極少量含於封閉材20中之碳黑而封閉材20成為黑色之故，通過封閉材20而看到晶圓11的表面11a之情況係通常為困難。The surface 11a of the wafer 11 is covered by the sealing material 20 composed in this way, and when the surface 11a of the wafer 11 is sealed, the sealing material 20 becomes black due to a very small amount of carbon black contained in the sealing material 20, and the sealing material 20 It is generally difficult to see the surface 11 a of the wafer 11 .

在此，使碳黑混入於封閉材20中之情況係主要為了防止裝置15之靜電破壞，而目前未有市售未含有碳黑之封閉材。Here, mixing carbon black into the sealing material 20 is mainly to prevent electrostatic breakdown of the device 15, and currently there is no sealing material that does not contain carbon black on the market.

封閉材20之塗佈方法係未特別加以限定，但塗佈封閉材20至突起電極17之高度為止者為佳，接著，經由蝕刻而蝕刻封閉材20，進行突起電極17之露出。The method of coating the sealing material 20 is not particularly limited, but it is preferable to coat the sealing material 20 up to the height of the protruding electrodes 17, and then etch the sealing material 20 by etching to expose the protruding electrodes 17.

實施封閉工程之後，自晶圓11的背面11b側至裝置晶片之完成厚度為止，研削晶圓11，實施使第1切削溝23中之封閉材20露出的研削工程。After the sealing process is performed, the wafer 11 is ground from the back surface 11b side of the wafer 11 to the finished thickness of the device wafer, and the grinding process is performed to expose the sealing material 20 in the first cutting groove 23 .

參照圖4而說明此研削工程。貼著表面保護膠帶22於晶圓11的表面11a，由研削裝置之夾盤24，藉由表面保護膠帶22而吸引保持晶圓11。This grinding process will be described with reference to FIG. 4 . The surface protection tape 22 is attached to the surface 11 a of the wafer 11 , and the wafer 11 is sucked and held by the chuck 24 of the grinding device through the surface protection tape 22 .

研削單元26係包含：經由可旋轉於主軸套28中地加以收容而未圖示之馬達，進行旋轉驅動之心軸30，和固定於心軸30之前端的盤座32，和可拆裝於盤座32地加以裝設之研削砂輪34。研削砂輪34係由環狀之轉輪基台36，和固定安裝於轉輪基台36之下端外周之複數的研磨石38而加以構成。The grinding unit 26 includes: a motor that is rotatably accommodated in the main shaft sleeve 28 and is not shown in the figure, a spindle 30 that is driven to rotate, and a disk seat 32 that is fixed on the front end of the spindle 30, and a disk base that can be disassembled on the disk. The grinding wheel 34 installed on the seat 32. Grinding grinding wheel 34 is made up of ring-shaped running wheel base 36 and a plurality of grinding stones 38 fixedly installed on the outer periphery of the lower end of running wheel base 36 .

在研削工程中，將夾盤24，於以箭頭a所示之方向，例如以300rpm進行旋轉同時，使研削砂輪34，於以箭頭b所示之方向，例如以6000rpm進行旋轉同時，驅動未圖示之研削單元傳送機構，使研削砂輪34之研磨石38接觸於晶圓11之背面11b。In the grinding process, the chuck 24 is rotated at, for example, 300 rpm in the direction shown by the arrow a, while the grinding wheel 34 is rotated at, for example, 6000 rpm in the direction shown by the arrow b, and is driven (not shown) The conveying mechanism of the grinding unit shown makes the grinding stone 38 of the grinding wheel 34 contact the back surface 11 b of the wafer 11 .

並且，將研削砂輪34，以特定的研削傳送速度，於下方進行特定量研削傳送之同時，研削晶圓11之背面11b。以接觸式或非接觸式之厚度測定計而測定晶圓11的厚度同時，將晶圓11研削為特定的厚度，例如100μm，使埋設於切削溝23中的封閉材20露出。In addition, the grinding wheel 34 grinds the back surface 11b of the wafer 11 while carrying out a specific amount of grinding transfer downward at a specific grinding transfer speed. While measuring the thickness of the wafer 11 with a contact or non-contact thickness gauge, the wafer 11 is ground to a specific thickness, eg, 100 μm, to expose the sealing material 20 buried in the cutting groove 23 .

實施研削工程之後，自晶圓11的表面11a側，經由紅外線攝影手段而通過封閉材20，攝影晶圓11的表面11a，查出形成於晶圓11之表面的至少2個之標靶圖案等之對準標記，實施依據此等之對準標記而查出欲雷射加工之分割預定線13之校準工程。After the grinding process is carried out, from the surface 11a side of the wafer 11, pass through the sealing material 20 through infrared photography means, take pictures of the surface 11a of the wafer 11, and detect at least two target patterns formed on the surface of the wafer 11, etc. According to the alignment marks, the calibration process of detecting the planned dividing line 13 to be laser processed is carried out based on these alignment marks.

對於此校準工程，參照圖5而詳細說明。在實施校準工程之前，在晶圓11的背面11b側，貼著於裝設外周部於環狀框體F之切割膠帶T。This calibration process will be described in detail with reference to FIG. 5 . Before the alignment process is performed, the dicing tape T attached to the ring frame F on the outer periphery of the wafer 11 is attached to the rear surface 11b side of the wafer 11 .

在校準工程中，如圖5所示，藉由切割膠帶T，以切削裝置之夾盤40而吸引保持晶圓11，使封閉晶圓11的表面11a之封閉材20露出於上方。並且，以夾鉗42而夾鉗固定環狀框體F。In the calibration process, as shown in FIG. 5 , the wafer 11 is sucked and held by the chuck 40 of the cutting device by dicing the tape T, so that the sealing material 20 sealing the surface 11a of the wafer 11 is exposed above. And, the ring-shaped frame body F is clamped and fixed by clamps 42 .

在校準工程中，以與圖2所示之切削裝置的攝影單元18同樣之雷射加工裝置之攝影單元18A的紅外線攝影元件，攝影晶圓11的表面11a。封閉材20係自透過有攝影單元18的紅外線攝影元件所受光之紅外線的封閉材加以構成之故，可經由紅外線攝影元件而查出形成於晶圓11的表面11a之至少2個標靶圖案等之對準標記者。In the calibration process, the surface 11a of the wafer 11 is photographed with the infrared imaging element of the imaging unit 18A of the laser processing apparatus similar to the imaging unit 18 of the cutting apparatus shown in FIG. 2 . The sealing material 20 is formed from the sealing material of the infrared light received by the infrared imaging element having the imaging unit 18, so that at least two target patterns formed on the surface 11a of the wafer 11 can be detected through the infrared imaging element. Alignment markers.

理想係作為紅外線攝影元件而採用感度高之InGaAs攝影元件。理想係攝影單元18，18A係具備可調整曝光時間等之曝光部。It is ideal to use high-sensitivity InGaAs imaging elements as infrared imaging elements. The ideal system photographing units 18 and 18A are equipped with exposure parts that can adjust the exposure time and the like.

接著，連結此等之對準標記的直線則呈與加工傳送方向平行地，θ旋轉夾盤40，更且經由僅對準標記與分割預定線13之中心的距離，將夾盤40移動於與加工傳送方向X1(參照圖6(A))正交之方向之時，查出欲雷射加工之分割預定線13。Then, the straight line connecting these alignment marks is parallel to the processing transmission direction, θ rotates the chuck 40, and moves the chuck 40 to the center of the center of the alignment mark and the dividing line 13 When processing the direction perpendicular to the conveying direction X1 (refer to FIG. 6(A)), find out the planned dividing line 13 to be laser processed.

實施校準工程之後，如圖6(A)所示，自晶圓11的表面11a側沿著分割預定線13，自雷射加工裝置之雷射頭(集光器)46照射對於封閉材20而言具有吸收性之波長(例如，355nm)之雷射束LB，實施經由剝蝕加工，形成如圖6(B)所示之雷射加工溝25，將晶圓11，分割為經由封閉材20加以圍繞表面11a及4個側面之各個的裝置晶片27之分割工程。After the alignment process is carried out, as shown in FIG. 6(A), from the surface 11a side of the wafer 11 along the planned dividing line 13, the laser head (collector) 46 of the laser processing device is irradiated to the sealing member 20. The laser beam LB having an absorbing wavelength (for example, 355nm) is subjected to ablation processing to form a laser processing groove 25 as shown in FIG. Singulation process of the device wafer 27 around the surface 11a and each of the four sides.

將此分割工程，沿著伸長於第1方向的分割預定線13依序實施之後，經由90°旋轉夾盤40，沿著伸長於正交於第1方向之第2方向的分割預定線13而依序實施之時，如圖6(B)所示，可將晶圓11，分割為經由封閉材20加以封閉表面11a及4個側面之各個的裝置晶片27者。After this dividing process is carried out sequentially along the planned dividing line 13 extending in the first direction, through the 90° rotating chuck 40, along the planned dividing line 13 extending in the second direction perpendicular to the first direction. When carrying out sequentially, as shown in FIG. 6(B), the wafer 11 can be divided into device chips 27 that seal the surface 11 a and each of the four side surfaces through the sealing material 20 .

在此分割工程所使用之雷射束LB之束徑係因較在切削溝形成工程所使用之切削刀片14之寬度為小之故，當形成如圖6(B)所示之雷射加工溝25時，裝置晶片27之側面係成為由封閉材20所封閉者。The beam diameter of the laser beam LB used in this division process is smaller than the width of the cutting blade 14 used in the cutting groove formation process. When forming the laser processing groove as shown in Figure 6(B) At 25 o'clock, the side surface of the device chip 27 is sealed by the sealing material 20.

如此所製造之裝置晶片27係經由反轉裝置晶片27之表背而將突起電極17連接於母板的導電墊片之倒裝晶片接合，而可安裝於母板者。The device chip 27 manufactured in this way can be mounted on the motherboard through flip-chip bonding in which the protruding electrodes 17 are connected to the conductive pads of the motherboard by inverting the front and back of the device chip 27 .

10‧‧‧切削單元11‧‧‧半導體晶圓13‧‧‧分割預定線14‧‧‧切削刀片15‧‧‧裝置16‧‧‧校準單元17‧‧‧電極凸塊18，18A‧‧‧攝影單元20‧‧‧封閉材23‧‧‧切削溝25‧‧‧雷射加工溝26‧‧‧研削單元27‧‧‧裝置晶片34‧‧‧研削砂輪38‧‧‧研磨石46‧‧‧雷射頭(集光器)10‧‧‧cutting unit 11‧‧‧semiconductor wafer 13‧‧‧separation schedule 14‧‧‧cutting blade 15‧‧‧device 16‧‧‧calibration unit 17‧‧‧electrode bump 18, 18A‧‧‧ Camera unit 20‧‧‧sealing material 23‧‧‧cutting groove 25‧‧‧laser processing groove 26‧‧‧grinding unit 27‧‧‧device chip 34‧‧‧grinding wheel 38‧‧‧grinding stone 46‧‧‧ Laser Head (Concentrator)

圖1係半導體晶圓之斜視圖。 　　圖2係顯示第1切削溝形成工程之斜視圖。 　　圖3係顯示封閉工程之斜視圖。 　　圖4係顯示研削工程之一部分剖面側面圖。 　　圖5係顯示校準工程之剖面圖。 　　圖6(A)係顯示分割工程的剖面圖，圖6(B)係分割工程之擴大剖面圖。Fig. 1 is a perspective view of a semiconductor wafer. Figure 2 is a perspective view showing the first cutting groove formation process. Figure 3 is an oblique view showing the closed works. Figure 4 is a side view showing a partial section of the grinding process. Figure 5 is a sectional view showing the calibration works. Figure 6(A) is a sectional view showing the division work, and Figure 6(B) is an enlarged sectional view of the division work.

11‧‧‧半導體晶圓 11‧‧‧semiconductor wafer

11a‧‧‧表面 11a‧‧‧surface

18A‧‧‧攝影單元 18A‧‧‧Photography unit

20‧‧‧封閉材 20‧‧‧sealing material

40‧‧‧夾盤 40‧‧‧Chuck

42‧‧‧夾鉗 42‧‧‧Clamp

F‧‧‧環狀框體 F‧‧‧ring frame

T‧‧‧切割膠帶 T‧‧‧Cutting Tape

Claims (2)

一種晶圓之加工方法，係於經由交叉所形成之複數的分割預定線所區劃之表面的各範圍，形成具有各複數的突起電極之裝置的晶圓之加工方法，其特徵為具備：自該晶圓的表面側，沿著該分割預定線，經由切削刀片而形成相當於裝置晶片之完成厚度之深度的切削溝的切削溝形成工程，和實施該切削溝形成工程之後，以封閉材而封閉包含該切削溝之該晶圓的表面之封閉工程，和實施該封閉工程之後，自該晶圓的背面側至該裝置晶片之完成厚度為止研削該晶圓而使該切削溝中之該封閉材露出之研削工程，和實施該研削工程之後，自該晶圓表面側，經由紅外線攝影手段，透過該封閉材而攝影晶圓的表面側，查出對準標記，依據該對準標記而查出欲雷射加工之該分割預定線的校準工程，實施該校準工程之後，自該晶圓之表面側，沿著該分割預定線，照射對於該封閉材而言具有吸收性之波長的雷射束，經由剝蝕加工而分割為經由該封閉材加以圍繞表面及4側面之各個的裝置晶片之分割工程；在該封閉工程中，經由具有使該紅外線攝影手段所受光的紅外線加以透過之透過性之含碳黑的該封閉材，加以封閉該晶圓的表面； 該碳黑之含有率係0.1質量%以上0.2質量%以下者。 A wafer processing method, which is a wafer processing method for forming a device with a plurality of protruding electrodes in each range of the surface demarcated by a plurality of predetermined division lines formed by crossing, which is characterized by: On the surface side of the wafer, a cutting groove forming process of forming a cutting groove having a depth equivalent to the complete thickness of the device wafer through a cutting blade along the planned dividing line, and sealing with a sealing material after performing the cutting groove forming process The sealing process of the surface of the wafer including the cutting groove, and after performing the sealing process, grinding the wafer from the back side of the wafer to the finished thickness of the device wafer so that the sealing material in the cutting groove The exposed grinding process, and after the grinding process is carried out, from the surface side of the wafer, through the sealing material, the surface side of the wafer is photographed by means of infrared photography, and the alignment mark is detected, and the detection is based on the alignment mark The calibration process of the planned division line to be processed by laser, after performing the calibration process, irradiate the laser beam of the wavelength which has absorption property for the sealing material from the surface side of the wafer along the planned division line , through ablation processing, it is divided into device chips that are surrounded by the sealing material on the surface and each of the four sides; The sealing material of carbon black, to seal the surface of the wafer; The content of the carbon black is not less than 0.1% by mass and not more than 0.2% by mass. 如申請專利範圍第1項記載之晶圓之加工方法，其中，在前述校準工程所使用之前述紅外線攝影手段係包含InGaAs攝影元件。 The wafer processing method described in item 1 of the scope of the patent application, wherein the aforementioned infrared imaging means used in the aforementioned calibration process includes InGaAs imaging elements.
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