TWI786387B - 結晶氧化物薄膜、積層體及薄膜電晶體 - Google Patents
結晶氧化物薄膜、積層體及薄膜電晶體 Download PDFInfo
- Publication number
- TWI786387B TWI786387B TW109110506A TW109110506A TWI786387B TW I786387 B TWI786387 B TW I786387B TW 109110506 A TW109110506 A TW 109110506A TW 109110506 A TW109110506 A TW 109110506A TW I786387 B TWI786387 B TW I786387B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film
- crystalline oxide
- oxide thin
- less
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 292
- 239000013078 crystal Substances 0.000 claims abstract description 80
- 239000010408 film Substances 0.000 claims description 277
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000000203 mixture Substances 0.000 claims description 30
- 229910052738 indium Inorganic materials 0.000 claims description 19
- 238000010894 electron beam technology Methods 0.000 claims description 18
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 claims description 7
- 229910052772 Samarium Inorganic materials 0.000 abstract description 17
- 229910052692 Dysprosium Inorganic materials 0.000 abstract description 6
- 229910052691 Erbium Inorganic materials 0.000 abstract description 6
- 229910052693 Europium Inorganic materials 0.000 abstract description 6
- 229910052688 Gadolinium Inorganic materials 0.000 abstract description 6
- 229910052689 Holmium Inorganic materials 0.000 abstract description 6
- 229910052765 Lutetium Inorganic materials 0.000 abstract description 6
- 229910052779 Neodymium Inorganic materials 0.000 abstract description 6
- 229910052771 Terbium Inorganic materials 0.000 abstract description 6
- 229910052775 Thulium Inorganic materials 0.000 abstract description 6
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 6
- 229910052746 lanthanum Inorganic materials 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 description 108
- 239000010410 layer Substances 0.000 description 88
- 230000000052 comparative effect Effects 0.000 description 71
- 239000007789 gas Substances 0.000 description 49
- 238000010438 heat treatment Methods 0.000 description 45
- 238000004544 sputter deposition Methods 0.000 description 42
- 238000003917 TEM image Methods 0.000 description 37
- 230000015572 biosynthetic process Effects 0.000 description 37
- 238000004519 manufacturing process Methods 0.000 description 30
- 238000005477 sputtering target Methods 0.000 description 28
- 239000002184 metal Substances 0.000 description 27
- 229910004298 SiO 2 Inorganic materials 0.000 description 26
- 238000000059 patterning Methods 0.000 description 25
- 239000000758 substrate Substances 0.000 description 25
- 229910052760 oxygen Inorganic materials 0.000 description 23
- 238000000137 annealing Methods 0.000 description 22
- 230000005669 field effect Effects 0.000 description 22
- 239000012535 impurity Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 22
- 230000001681 protective effect Effects 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- 239000001301 oxygen Substances 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 238000012546 transfer Methods 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 230000005540 biological transmission Effects 0.000 description 14
- 238000005204 segregation Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 230000005641 tunneling Effects 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 238000009616 inductively coupled plasma Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229910052747 lanthanoid Inorganic materials 0.000 description 8
- 150000002602 lanthanoids Chemical class 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical group 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000013507 mapping Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 101100072790 Mus musculus Irf4 gene Proteins 0.000 description 4
- -1 SiONx Inorganic materials 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010893 electron trap Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010191 image analysis Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 108091006149 Electron carriers Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000012764 semi-quantitative analysis Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000011573 trace mineral Substances 0.000 description 2
- 235000013619 trace mineral Nutrition 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000616 Ferromanganese Inorganic materials 0.000 description 1
- 241001175904 Labeo bata Species 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- DJDRFGKUKABLMW-UHFFFAOYSA-N OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O DJDRFGKUKABLMW-UHFFFAOYSA-N 0.000 description 1
- SMEWCZNCBBHWPS-UHFFFAOYSA-N OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O SMEWCZNCBBHWPS-UHFFFAOYSA-N 0.000 description 1
- RUALJRRHQOXKDC-UHFFFAOYSA-N OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O.OC(=O)C(O)=O RUALJRRHQOXKDC-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000547 structure data Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000004841 transmission electron microscopy energy-dispersive X-ray spectroscopy Methods 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- 238000009681 x-ray fluorescence measurement Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-064561 | 2019-03-28 | ||
JP2019064561 | 2019-03-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202044539A TW202044539A (zh) | 2020-12-01 |
TWI786387B true TWI786387B (zh) | 2022-12-11 |
Family
ID=72611061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109110506A TWI786387B (zh) | 2019-03-28 | 2020-03-27 | 結晶氧化物薄膜、積層體及薄膜電晶體 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220199784A1 (fr) |
JP (1) | JP6853421B2 (fr) |
KR (1) | KR102428977B1 (fr) |
CN (1) | CN113614276B (fr) |
TW (1) | TWI786387B (fr) |
WO (1) | WO2020196716A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115084275A (zh) * | 2021-03-15 | 2022-09-20 | 京东方科技集团股份有限公司 | 金属氧化物TFT及制造方法、x射线探测器和显示面板 |
JPWO2023063348A1 (fr) | 2021-10-14 | 2023-04-20 | ||
JPWO2023063352A1 (fr) | 2021-10-14 | 2023-04-20 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102160182A (zh) * | 2008-09-17 | 2011-08-17 | 出光兴产株式会社 | 具有结晶质氧化铟半导体膜的薄膜晶体管 |
TW201841865A (zh) * | 2017-03-30 | 2018-12-01 | 日本商出光興產股份有限公司 | 石榴石化合物、氧化物燒結體、氧化物半導體薄膜、薄膜電晶體、電子機器、及影像感測器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10165080B4 (de) * | 2000-09-20 | 2015-05-13 | Hitachi Metals, Ltd. | Siliciumnitrid-Pulver und -Sinterkörper sowie Verfahren zu deren Herstellung und Leiterplatte damit |
KR101612147B1 (ko) * | 2008-10-23 | 2016-04-12 | 이데미쓰 고산 가부시키가이샤 | 박막 트랜지스터 및 그 제조방법 |
JP5186611B2 (ja) | 2010-12-28 | 2013-04-17 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
JP5189674B2 (ja) * | 2010-12-28 | 2013-04-24 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
JP6284710B2 (ja) * | 2012-10-18 | 2018-02-28 | 出光興産株式会社 | スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法 |
TWI649794B (zh) * | 2012-11-08 | 2019-02-01 | 日商半導體能源研究所股份有限公司 | 金屬氧化物膜及形成金屬氧化物膜的方法 |
US20160343554A1 (en) * | 2013-12-27 | 2016-11-24 | Idemitsu Kosan Co., Ltd. | Oxide sintered body, method for producing same and sputtering target |
JP2016201458A (ja) * | 2015-04-09 | 2016-12-01 | 出光興産株式会社 | 微結晶質酸化物半導体薄膜及びそれを用いた薄膜トランジスタ |
US10636914B2 (en) | 2015-07-30 | 2020-04-28 | Idemitsu Kosan Co., Ltd. | Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistor |
CN109641757B (zh) | 2016-08-31 | 2022-02-25 | 出光兴产株式会社 | 石榴石型化合物、含有该化合物的烧结体以及溅射靶 |
JP2018107316A (ja) | 2016-12-27 | 2018-07-05 | 住友金属鉱山株式会社 | 酸化物半導体薄膜及びその製造方法、並びに薄膜トランジスタ |
JP7187322B2 (ja) * | 2017-02-01 | 2022-12-12 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置 |
-
2020
- 2020-03-26 US US17/598,817 patent/US20220199784A1/en active Pending
- 2020-03-26 KR KR1020217030104A patent/KR102428977B1/ko active IP Right Grant
- 2020-03-26 WO PCT/JP2020/013566 patent/WO2020196716A1/fr active Application Filing
- 2020-03-26 JP JP2020534642A patent/JP6853421B2/ja active Active
- 2020-03-26 CN CN202080023273.1A patent/CN113614276B/zh active Active
- 2020-03-27 TW TW109110506A patent/TWI786387B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102160182A (zh) * | 2008-09-17 | 2011-08-17 | 出光兴产株式会社 | 具有结晶质氧化铟半导体膜的薄膜晶体管 |
TW201841865A (zh) * | 2017-03-30 | 2018-12-01 | 日本商出光興產股份有限公司 | 石榴石化合物、氧化物燒結體、氧化物半導體薄膜、薄膜電晶體、電子機器、及影像感測器 |
Also Published As
Publication number | Publication date |
---|---|
US20220199784A1 (en) | 2022-06-23 |
JP6853421B2 (ja) | 2021-03-31 |
JPWO2020196716A1 (ja) | 2021-04-08 |
KR102428977B1 (ko) | 2022-08-03 |
TW202044539A (zh) | 2020-12-01 |
KR20210144707A (ko) | 2021-11-30 |
CN113614276B (zh) | 2022-10-11 |
WO2020196716A1 (fr) | 2020-10-01 |
CN113614276A (zh) | 2021-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11824124B2 (en) | Liquid crystal display device including transistor comprising oxide semiconductor | |
TWI786387B (zh) | 結晶氧化物薄膜、積層體及薄膜電晶體 | |
KR101407402B1 (ko) | 박막 트랜지스터의 반도체층용 산화물 및 스퍼터링 타깃, 및 박막 트랜지스터 | |
KR101436766B1 (ko) | 산화물 반도체 박막층을 갖는 적층 구조 및 박막 트랜지스터 | |
CN102945857B (zh) | 无定形氧化物和场效应晶体管 | |
KR101446230B1 (ko) | 박막 트랜지스터의 반도체층용 산화물 및 스퍼터링 타깃과 박막 트랜지스터 | |
CN101882630A (zh) | 半导体装置及半导体装置的制造方法 | |
TW201308611A (zh) | 薄膜電晶體 | |
JP5795551B2 (ja) | 電界効果型トランジスタの製造方法 | |
JP6178733B2 (ja) | 積層構造、その製造方法及び薄膜トランジスタ | |
JP2014229666A (ja) | 薄膜トランジスタ | |
JP2015032655A (ja) | 薄膜トランジスタ | |
WO2023063348A1 (fr) | Film mince d'oxyde cristallin, stratifié et transistor à couches minces | |
WO2023063352A1 (fr) | Film mince d'oxyde cristallin, son procédé de production, transistor à film mince et son procédé de production | |
WO2023234163A1 (fr) | Structure stratifiée et transistor à couches minces | |
CN118103994A (zh) | 晶体氧化物薄膜、层叠体及薄膜晶体管 | |
WO2023234164A1 (fr) | Structure stratifiée et transistor à couches minces | |
WO2023234165A1 (fr) | Structure multicouche et transistor à couches minces | |
CN118103963A (zh) | 晶体氧化物薄膜及其制造方法、以及薄膜晶体管及其制造方法 | |
JP2022076351A (ja) | 酸化物半導体層を有する薄膜トランジスタ及びスパッタリングターゲット |