TWI784622B - 黏晶裝置及半導體裝置的製造方法 - Google Patents

黏晶裝置及半導體裝置的製造方法 Download PDF

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TWI784622B
TWI784622B TW110126373A TW110126373A TWI784622B TW I784622 B TWI784622 B TW I784622B TW 110126373 A TW110126373 A TW 110126373A TW 110126373 A TW110126373 A TW 110126373A TW I784622 B TWI784622 B TW I784622B
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aforementioned
stator
mover
die
linear
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TW110126373A
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TW202209947A (zh
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Ryo Saegusa
望月政幸
山本啓太
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日商捷進科技有限公司
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Abstract

本發明的課題是在於提供一種可更減低振動的黏晶裝置。 其解決手段,黏晶裝置是具備:被驅動體、及驅動被驅動體的機台。 機台是具備: 基座; 具備使被驅動體移動的第一可動子及固定子的線性馬達; 被設在基座與固定子之間,使固定子自由地移動的第一直動引導裝置; 被設在基座與第一可動子之間,使第一可動子自由地移動的第二直動引導裝置; 固定於基座而設的第二可動子;及 控制第一可動子及第二可動子的控制裝置, 控制裝置係被構成為藉由第二可動子來使固定子沿著第一直動引導裝置而移動。

Description

黏晶裝置及半導體裝置的製造方法
本案是關於黏晶裝置,例如可適用於具備反動吸收機構的黏晶裝置。
半導體製造裝置之一,有將被稱為晶粒的半導體晶片接合於配線基板或引線架等的基板之黏晶機等的黏晶裝置。黏晶機是以接合頭來真空吸附晶粒,高速上昇,水平移動,下降而安裝於基板。
黏晶機的高精度、高速化的要求高,特別是接合的心臓部即接合頭的高速化的要求高。一般若使裝置高速化,則高速移動物體所致的振動會變大,因為此振動,難以取得裝置所目的的精度。
作為減低此振動的反動吸收裝置,例如有日本特開2013-179206號公報(專利文獻1)記載者。專利文獻1是揭示一種使用線性馬達作為黏晶機的接合頭的驅動軸,以包含固定磁石部的固定一體部作為平衡配重(Counterweight),可自由地移動固定一體部,包含接合頭的可動一體部與固定一體部會互相同步移動,藉此減低振動的技術。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2013-179206號公報
(發明所欲解決的課題)
但,如專利文獻1所揭示的技術般,自由地以可動一體部(可動子)的反動來使固定一體部(固定子)動作的構造,是難為使振動減低的細的動作控制。
本案的課題是在於提供一種可更減低振動的黏晶裝置。 (用以解決課題的手段)
若簡單地說明本案之中代表性者的概要,則如下述般。 亦即,黏晶裝置是具備:被驅動體、及驅動被驅動體的機台。 機台是具備: 基座; 具備使被驅動體移動的第一可動子及固定子的線性馬達; 被設在基座與固定子之間,使固定子自由地移動的第一直動引導裝置; 被設在基座與第一可動子之間,使第一可動子自由地移動的第二直動引導裝置; 固定於基座而設的第二可動子;及 控制第一可動子及第二可動子的控制裝置。 控制裝置係被構成為藉由第二可動子來使固定子沿著第一直動引導裝置而移動。 [發明的效果]
若根據上述黏晶裝置,則可更減低振動。
以下,利用圖面說明實施形態、變形例及實施例。但,在以下的說明中,有對同一構成要素附上同一符號而省略重複說明的情形。另外,圖面為了使說明更明確,而相較於實際的形態,有模式性地表示各部的寬度、厚度、形狀等的情況,但究竟只是一例,不是限定本案的解釋者。
利用圖1~圖5來說明有關實施形態的機台(table)的構成。圖1是實施形態的機台的上面圖。圖2是圖1的機台的正面圖。圖3是圖1的A-A線的剖面圖。圖4是圖1的B-B線的剖面圖。圖5是在具有圖1所示的機台的黏晶裝置中第一可動子移動前的狀態的立體圖。
實施形態的機台100是使用線性馬達作為驅動源。 機台100是具備: 基座(base)101; 被設置於基座101上的第一直動引導裝置(guide)102; 與第一直動引導裝置102平行地被配置於基座101上的第二直動引導裝置103;及 被設置於第一直動引導裝置102上的固定子104。 基座101是被固定於黏晶裝置10的架台(未圖示)。第一直動引導裝置102及第二直動引導裝置103是延伸於Y軸方向。第一直動引導裝置102是被構成比第二直動引導裝置103更長。
固定子104是具備: 以各個的永久磁石的N極與S極會交替地被配列於Y方向的複數的永久磁石所構成的磁石部104a; 結合複數的永久磁石之中相鄰的永久磁石的複數的組合的磁束之平板狀的磁軛104b;及 移動於第一直動引導裝置102上的第一直動滑塊104c。 磁石部104a是被設在磁軛104b的上面,第一直動滑塊104c是被設在磁軛104b的下面。
機台100是更具備被設在固定子104的上方的第一可動子105及第二可動子106。第一可動子105是具備:線圈部105a、支撐線圈部105a的支撐體105b、及移動於第二直動引導裝置103上的第二直動滑塊105c。線圈部105a是具備藉由電流來產生磁束的線圈、鐵芯及結合相鄰的磁束的磁軛,構成電磁石。支撐體105b是被設在第二直動滑塊105c上。第一可動子105是可自由移動於第二直動引導裝置103上。
第二可動子106是具備:線圈部106a、及支撐線圈部106a的支撐體106b。線圈部106a是與線圈部105a同樣的構成。支撐體106b是被設在基座101上。第二可動子106是被固定於基座101而設為不動。
第一可動子105(線圈部105a)及第二可動子106(線圈部106a)的Y軸方向的長度是比固定子104(磁石部104a)的Y軸方向的長度更短。合計第一可動子105(線圈部105a)的Y軸方向的長度與第二可動子106(線圈部106a)的Y軸方向的長度的長度也比固定子104(磁石部104a)的Y軸方向的長度更短。
如圖5所示般,第一可動子105是連接被驅動體108。被驅動體108是例如將接合頭驅動於上下方向的Z驅動軸等。在被驅動體108是接合頭也包含。
又,機台100是具備跨越基座101的Y軸方向的大致全域而設的標度(scale)107。藉由標度107及被設在被驅動體108的例如光學式的測出感測器(未圖示)來構成線性感測器。線性感測器是測出被驅動體108的Y軸方向的位置,根據此線性感測器的輸出來進行位置控制或速度控制等的往目的位置的移動控制。藉此,例如第一可動子105是可藉由被記載於日本特開2015-173551號公報的控制方法所控制。
機台100的動作是藉由控制裝置110來控制。亦即,控制裝置110是例如驅動連接至網路的I/O或致動器(actuator)等來控制流至第一可動子105及第二可動子106的線圈的電流,藉此控制機台100的動作。
利用圖6說明有關實施形態的機台的反動吸收動作。圖6是說明圖5所示的機台的反動吸收動作的立體圖。
控制裝置110是在與第一可動子105所移動的方向(Y軸方向)同方向,與第一可動子105的移動並行使第二可動子106假想地移動。另外,第二可動子106是被固定於基座101,因此無法移動。當第二可動子106設為未被固定時,將以第二可動子106會移動的方式流動電流的情形稱為使第二可動子106假想地移動。
在此,將第一可動子105的質量設為m1,將固定子104的質量設為m2,將第一可動子105的加速度設為a1,將第二可動子106的加速度設為a2,將固定子104的加速度設為a3,將作用於第一可動子105的推力設為F1,將作用於第二可動子106的推力設為F2,且將作用於固定子104的推力設為F3。各個的運動方程式是以下記的式子來表示。
F1=m1×a1  ・・・(1) F2=m2×a2  ・・・(2) F3=m2×a3  ・・・(3)
反動吸收(反作用)機構是第一可動子105與固定子104的運動方程式相等時發揮效果。亦即,下記的式子成立。
F1=F3     ・・・(4)
在此,將第一可動子105移動時的往固定子104的推力設為F’,且將其加速度設為a’。平衡配重的固定子104的加速度(a3)是起因於第一可動子105移動時的往固定子104的推力(F’)的加速度(a’)(在此a’<a1)加上不動的第二可動子106的加速度(a2)者。亦即,下記的式子成立。
a3=a’+a2  ・・・(5) F3=F’+F2  ・・・(6)
藉由上述的式子來計算此時的第二可動子106所求的加速度。亦即,在式(4)中代入式(1)(3)(5)。
m1×a1=m2×a3 =m2(a’+a2) ∴ a2=(m1/m2)×a1-a’  ・・・(7)
藉由將第二可動子106的加速度設為在上述式(7)中放入數值而算出的a2,反作用機構會發揮效果。但,如上述般,第二可動子106是被固定於基座101,因此取代第二可動子106,固定子104會移動於與第一可動子105相反方向。藉此,可謀求機台100的制振。
在本實施形態中,設置固定於基座101的第二可動子106的同時,將固定子104設為可自由移動。藉此,可使用固定子104作為平衡配重(counterweight),因此可使反作用機構小型化。又,由於藉由不動的第二可動子106來控制固定子104的加速度,因此可按每個機台調整適當的制振移動距離,配合機差的反作用機構成為可能。
實質,配合第一可動子105的加速度的固定子104的加速度的計算是如上述般。利用圖29所示的v-t圖來進行說明。圖29是表示第一可動子及固定子的速度與時間的關係的圖。將第一可動子105的加速時間、定速時間及減速時間分別設為ta、tc、td時,藉由第二可動子106來動作的固定子104也與第一可動子105配合加速時間、定速時間及減速時間,藉此使反作用成立。此時,以第二可動子106來移動的固定子104是需要以和可動子相同的行程(stroke)來運動。但,使用固定子104時,對於第一可動子105的加速度,能以質量比m1/m2來使固定子104的加速度變化,藉此固定子104的動作速度也可自由地調整。因此,亦可使行程範圍比第一可動子105更窄。
由於本實施形態的機台是可自由地控制反作用動作,因此與本機台不同的其他的機台被搭載於同裝置時,藉由本機台的第二可動子來使固定子移動,其他機台的動作時,可發出消除該振動的振動。藉此,即使不在其他機台加諸制振機構,也可代用,因此可防止肥大化,裝置內空間、成本都可抑制。
利用圖5~圖8來說明有關實施形態的機台的行程伸長動作。圖7是在圖5所示的機台中在與圖6相反方向移動固定子時的立體圖。圖8是說明圖7所示的機台的第一可動子的行程的立體圖。
如上述般,在機台100中反動吸收動作時,如圖6所示般,控制裝置110會使不動的第二可動子106假想地移動於與第一可動子105的移動的方向同方向,藉此固定子104會移動於與第一可動子105相反方向,進行反作用動作。在此,第一可動子105的行程(可動範圍)是L1。又,如圖5所示般,在第一可動子105及固定子104移動之前,第二可動子106的右端是離固定子104的右端,L2的距離固定。
如圖7所示般,若控制裝置110使第二可動子106假想地移動於與第一可動子105的移動的方向(Y軸方向)相反方向,則固定子104是移動於與第一可動子105所移動的方向同方向。固定子104是最大只可移動L2,因此如圖8所示般,可將第一可動子105的行程從L1伸長至(L1+L2)。如此伸長行程時,可使機台的肥大化停留在最小限,藉由小型設計及組合工數的削減、零件點數減少,可抑制成本。
例如,在黏晶裝置的接合機台設置本機台時,藉由設置一與進行黏晶的行程分開在被延長的行程的範圍進行處理晶粒的消耗品例如夾頭的更換・洗滌的單元,可使製品的品質、維修性提升。又,即使是在接合機台的延伸方向(Y軸方向)搬送基板的道為配置二個的2道的裝置等的長行程的驅動也可使固定子小型化來低價實施。
<變形例> 以下,舉幾個例子說明有關實施形態的代表性的變形例。在以下的變形例的說明中,對於具有與在上述的實施形態說明者同樣的構成及機能的部分,可使用與上述的實施形態同樣的符號。而且,有關如此的部分的說明是可在技術上不矛盾的範圍內適當援用上述的實施形態的說明。又,上述的實施形態的一部分及複數的變形例的全部或一部分可在技術上不矛盾的範圍內複合地適用。
(第一變形例) 利用圖9及圖10來說明有關第一變形例的機台。圖9是第一變形例的機台的立體圖。圖10是表示第一可動子的速度與加速度、固定子的加速度的波形的圖。
如圖9所示般,第一變形例的機台100是在被連接至實施形態的機台的第一可動子105之被驅動體108的前端設置加速度感測器109者,其他的構成則是與實施形態的機台同樣。
第一可動子105進行圖10所示般的加減速時,固定子104是藉由進行與第一可動子105的加速度時間波形(MAW)反相位的加速度時間波形(FAW)的動作,反作用會成立。如上述般,實施形態的控制裝置110是將第一可動子105及第二可動子106獨立地進行控制,與第一可動子105的移動並行使第二可動子106非同步地移動於同方向,進行反作用動作。在第一變形例中,在與實施形態同樣的反作用動作中,藉由加速度感測器109來計測伴隨加速度產生的搖回的波形,使反映至第二可動子106使固定子104動作的標準加速度波形。
具體而言,從加速度感測器109所計測的波形,藉由控制裝置110的計測部及運算部來算出反相位的波形,藉此即時(real time)求取第二可動子106的加速度,使反作用動作成立。
實施形態的反作用動作是對於在事前實施的接合等的動作中計測加速度等而評價的最適動作進行。例如,使用從預先蓄積的計測資料取得的標準的值、或利用事前計算的振動與加速度的相關來評價的值。從對於依據評價結果而取得的最適動作計算取得的第一可動子105的加速度與第一可動子105的重量來算出推力而算出運動能量。以能形成與此運動能量相同的能量之方式,從固定子104全體的重量算出必要的加速度。在與第一可動子105的加速時間同時間,將此固定子104所必要的加速度輸入至第二可動子106而實施。
如本變形例般,藉由加速度感測器109來即時計測加速度時,以進行上述計算的控制裝置110來每次實施計算,即時修正輸入至第二可動子106的加速度,藉此可自動地實現在適當加速度的反作用。實施形態的接合頭等的第一可動子105的加速度雖從設定速度自動地設定,但由於在直動引導裝置等的負荷的經歷時間變化下會有變化的情況,因此本變形例有效。
(第二變形例) 利用圖11說明有關第二變形例的機台。圖11是第二變形例的機台的立體圖。
第二變形例的機台100是在搭載有實施形態的第一直動引導裝置102及第二直動引導裝置103的共通的基座101之下與第一直動引導裝置102或第二直動引導裝置103平行地設置2處以上的重量感測器201者,其他的構成是與實施形態的機台同樣。若只為考慮僅Y軸方向的振動抑制的反作用動作,則只要在基座101的Y軸方向的兩端(2處)設置即可,當考慮機台的重心的X軸成分時,如圖11所示般,在基座101的四個角落(4處)設置。
第二變形例是在實施形態的反作用動作中,進行以下的控制。在第一可動子105的移動前,例如記憶二個的重量感測器201的重量,在第一可動子105的動作時,以維持該等的重量感測器201的檢測後的重量平衡之方式,藉由第二可動子106來控制固定子104的移動而使動作。亦即,藉由第二可動子106來賦予固定子104推力,而使匹配第一可動子105與固定子104的重心位置即使在第一可動子105的移動時也會經常形成與動作開始前的重心相同的位置,藉此在與第一可動子105相反方向控制動作。
事前以手動動作實施以下。在此,重量平衡是例如二個的重量感測器201所檢測後的重量的比率,不是二個的重量的差的絕對值。並且,針對被驅動體108為接合頭的例子進行說明。
(簡易動作) (1-1)使驅動接合頭的第一可動子105移動至晶粒的拾取位置(開始位置)而測定其位置的重量平衡。在此,固定子104是維持開始位置。 (1-2)使第一可動子105移動至晶粒的接合位置(停止位置)來測定其重量平衡。在此,固定子104是不使移動而維持開始位置。 (1-3)在第一可動子105移動至接合位置的狀態下,使固定子104移動至形成拾取位置(開始位置)的重量平衡為止,記憶其位置。 (1-4)在與第一可動子105的拾取位置(開始位置)~接合位置(停止位置)的(Y軸)動作相同的時間,使固定子104動作於其開始位置與(1-3)的位置之間。
(詳細動作) 接合頭動作的加速動作時,是進行在第一變形例說明的動作,低速運動時,是動作為包含接合頭的加速時的移動量,考慮了重量平衡的上述移動。
另外,亦可在第一直動引導裝置102及第二直動引導裝置103的兩端部之下,基座101之上設置重量感測器201。
(第三變形例) 利用圖12說明有關第三變形例的機台。圖12是第三變形例的機台的立體圖。
第三變形例的機台100是在實施形態的第一直動引導裝置102及第二直動引導裝置103的兩端部之下,基座101之上設置用以吸收Z方向的振動的減振器或平衡器(擺式反作用)等的制振構件202者,其他的構成是與實施形態的機台同樣。另外,亦可在基座101的四個角落之下,裝置的架台之上設置制振構件202。
(第四變形例) 利用圖14~圖17說明有關第四變形例的機台的構成。圖14是第四變形例的機台的上面圖。圖15是圖14的機台的正面圖。圖16是圖14的C-C線的剖面圖。圖17是圖14的D-D線的剖面圖。
第四變形例的機台100是對於實施形態的機台而言,更具備:可將固定子104固定及移動的電磁離合器111、及可固定第二可動子106的固定板112。又,第二可動子106是與第一可動子105同樣,被設在第二直動引導裝置103上。因此,第二直動引導裝置103是被構成為在Y軸方向,比實施形態更長延伸。第四變形例的第二可動子106是具備:支撐線圈部106a的支撐體106b、及移動於第二直動引導裝置103上的第二直動滑塊106c。支撐體106b是與支撐體105b同樣,被設在第二直動滑塊105c上。第四變形例的機台100的其他的構成是與實施形態同樣。
電磁離合器111是以線圈所構成,藉由在線圈通電而產生的電磁力會吸引固定子104的以強磁性體所形的磁軛104b而將固定子104固定。藉由遮斷往線圈的通電,電磁力會消滅而吸引磁軛104b的力量會消失,固定子104可移動。藉由電磁離合器111,可在任意的位置將固定子104固定。
固定板112是以強磁性體所形成,沿著第二直動引導裝置103來延伸配置。支撐體106b是與電磁離合器111同樣地具備線圈,藉由在線圈通電而產生的電磁力會被吸引至固定板112而固定第二可動子106。藉由遮斷往線圈的通電,電磁力會消滅而吸引固定板112的力量會消失,第二可動子106可移動。藉由支撐體106b的電磁離合器機能及固定板112,可在任意的位置固定第二可動子106。
利用圖18及圖19來說明有關第四變形例的機台的反動吸收動作。圖18是說明第四變形例的機台的第一反動吸收動作的立體圖。圖19是說明第四變形例的機台的第二反動吸收動作的立體圖。
進行第一可動子105大的動作時,如圖18所示般,藉由支撐體106b的電磁離合器機能來將第二可動子106固定於固定板112,且可藉由電磁離合器111來移動固定子104,與實施形態同樣,進行固定子104所致的反作用動作。
進行第一可動子105小的動作時,如圖19所示般,可藉由支撐體106b的電磁離合器機能來移動第二可動子106,且藉由電磁離合器111來固定固定子104,進行第二可動子106所致的反作用動作。
利用圖20~圖22來說明有關第四變形例的機台的行程伸長動作。圖20是表示將第四變形例的機台的第二可動子移動至預定位置的狀態的立體圖。圖21是表示將第四變形例的機台的固定子移動於行進方向的狀態的立體圖。圖22是表示將第四變形例的機台的第一可動子移動於行進方向的狀態的立體圖。
藉由電磁離合器111來固定固定子104,且可藉由支撐體106b的電磁離合器機能來使第二可動子106移動化。如圖20所示般,使第二可動子106在第一可動子105的移動的行進方向移動預定距離之後,藉由支撐體106b的電磁離合器機能來固定第二可動子106。如圖21所示般,若在與第一可動子105的移動的方向相反方向使第二可動子106假想地移動,則固定子104是在與第一可動子105所移動的方向同方向動作。藉此,如圖22所示般,與實施形態同樣地,可伸長第一可動子105的行程。
(第五變形例) 利用圖13(a)及圖13(b)來說明有關第五變形例的機台的構成。圖13(a)是第五變形例的機台的相當於圖1的B-B線的剖面圖的圖。圖13(b)是第五變形例的其他的例子的機台的相當於圖1的B-B線的剖面圖的圖。
第五變形例的機台是進一步設置對於實施形態的機台來檢測固定子104的位置的線性感測器者。
如圖13(a)所示般,藉由被設置在固定子104的第二可動子106側的側面的標度107a及被設在第二可動子106的支撐體106b的光學式的測出感測器109a來構成線性感測器。藉此,固定子104也根據線性感測器的輸出來進行位置控制或速度控制等的往目的位置的移動控制。例如,第二可動子106是可藉由日引特開2015-173551號公報記載的控制方法來控制。
另外,如圖13(b)所示般,藉由設在固定子104的光學式的測出感測器109b及被設在基座101的標度107來構成線性感測器。
(第六變形例) 利用圖28說明有關第六變形例的機台的構成。圖28是第六變形例的機台的立體圖。
在實施形態中說明了固定子104的磁石部104a的永久磁石的N極與S極的配置為均等的例子,但如圖28所示般,亦可設為使固定子104的磁石部104a之中與第二可動子106對向而動作的部分的永久磁石的N極與S極的配置緻密,或改變磁石的大小,而使容易增加推力。亦即,在第六變形例中,不將被配置於磁軛104b上的磁石部104a的N極及S極改變配列地適當小型化幾個的永久磁石,緻密地配置,藉此可設為第二可動子106的線圈部106a的詳細的動作者。通常,以磁鐵板構成的固定子的重量重,移動量變少。S極、N極的間隔窄較能將縮小第二可動子106的線圈部106a的行程予以精度佳移動。藉此,即使第一可動子105與固定子104的重量大幅度地不同,或因此第二可動子106與固定子104的移動量不同(該等的移動量變非常小)時,也可使第二可動子106的動作與固定子104的動作同步,使第二可動子106與固定子104以同樣的精度動作。例如,就5對1的重量比而言,若以5倍的密度來配置SN極,則同步控制變容易。
(第七變形例) 利用圖30~圖33說明有關第七變形例的機台的構成。圖30是第七變形例的機台的上面圖。圖31是圖30所示的機台的正面圖。圖32是圖30所示的機台的背面圖。圖33是圖30所示的機台的左側面圖。
在實施形態中,將測出第一可動子105的位置之線性感測器的標度(scale)107設在基座101,但在第七變形例中,將用以測出第一可動子105的位置的標度213設在固定子104。並且,在第七變形例中,用以測出固定子104的位置的標度215也設在固定子104。而且,在第七變形例中,由於將標度213,215設在固定子104,因此固定子104的構造與實施形態不同。第七變形例的機台100是除了線性感測器關聯的構成,與實施形態同樣的構成。以下,以和實施形態不同的點為中心說明有關第七變形例的機台100。
首先,說明有關第七變形例的固定子104。如圖33所示般,磁軛104b是側面視コ的字狀。磁石部104a是被設在磁軛104b的上部側水平部的下面,其他的部分是被設在磁軛104b的下部側水平部的上面,第一直動滑塊104c是被設在磁軛104b的下部側水平部的下面。
其次,說明有關第七變形例的第一可動子105。支撐體105b是被立設在第二直動滑塊105c上,延伸至比磁軛104b的上部側水平部的上面更上方。線圈部105a是以位於磁軛104b的上部側水平部與下部側水平部的上下方向的中間之方式被支撐於支撐體105b。
其次,說明有關第七變形例的第二可動子106。第二可動子106是與實施形態同樣的構造,線圈部106a是以位於磁軛104b的上部側水平部與下部側水平部的上下方向的中間之方式,在支撐體106b的上部側被支撐。
其次,說明有關第七變形例的線性感測器。在第一可動子105的支撐體105b的上面是連接第一可動子105用的掃描頭212。掃描頭212是連接與實施形態所示的被驅動體108同樣的被驅動體。固定子104用的掃描頭214是被支撐於基座101上所固定的支撐體216的上面。
又,機台100是具備: 在磁軛104b的上部側水平部的上面延伸於Y軸方向而設的第一可動子105用的標度213;及 在磁軛104b的垂直部的側面跨越Y軸方向的大致全域而設的固定子104用的標度215。 藉由標度213及被設在掃描頭212的光學式的測出感測器(未圖示)來構成第一線性感測器。藉由標度215及被設在掃描頭214的光學式的測出感測器(未圖示)來構成第二線性感測器。
第一線性感測器是測出第一可動子105的相對於固定子104的Y軸方向的位置,第二線性感測器是測出固定子104的相對於基座101的Y軸方向的位置。根據第一線性感測器的輸出,進行位置控制或速度控制等的往目的位置移動第一可動子105的移動控制,根據第二線性感測器的輸出,進行位置控制或速度控制等的往目的位置移動固定子104的移動控制。
一般,在馬達是使用霍爾感測器。所謂霍爾感測器是應用被稱為霍爾效應的電流磁氣效果的感測器。用途是一般為旋轉測出、位置測出、開閉測出、電流檢測、方位測出等。作為線性馬達的用途是將磁場的強度・方向變換成電壓的位置測出。
為了利用線性馬達來實行反作用機構,需要在固定子104的磁石部104a移動時可移動正確地檢測指示第一可動子105的線圈部105a所移動的方向後的距離。假若第一可動子105與固定子104的相位不同時,也可思考力矩(torque)不足或反動作。
利用線性感測器來測出第一可動子105的相對於基座101的位置(絕對位置)時,在反作用動作中由於固定子104移動,因此無法掌握第一可動子105與固定子104的相對位置。為此,需要利用設在第一可動子105的線圈部105a的霍爾感測器來測出第一可動子105的相對於固定子104的位置,以第一可動子105與固定子104的相位不會相異(形成相同)之方式進行控制。
在第七變形例中,藉由在固定子104側安裝第一可動子105用的標度215,掌握第一可動子105與固定子104的相對位置。藉此,可使固定子104的動作的標度215的位置追隨磁石部104a的磁極的排列。因此,即使不實施控制,也可掌握第一可動子105與固定子104的相對位置關係,可使持有正確的相位(θ)的電流流至第一可動子105的線圈,因此能以線性馬達來使推力正確產生。此時,為了使第一可動子105往目的位置移動,需要考慮反作用動作控制的固定子104的移動量。反作用動作控制的固定子104的移動量是可依照根據第一可動子105與固定子104的重量比之固定子104的時間-速度變化來求取。
(第八變形例) 利用圖34及圖35來說明有關第八變形例的機台的構成。圖34是第八變形例的機台的上面圖。圖35是圖34所示的機台的背面圖。
在第七變形例中,第一可動子105用的標度213與固定子104用的標度215是使用個別的標度。在第八變形例中,設置1個覆蓋固定子104的全域的標度213,以第一可動子105的第一線性感測器及在被固定於基座101的第二可動子106所設的第二線性感測器來分別測出同標度213的別的位置。
以下,說明有關將實施形態或變形例的機台適用於黏晶裝置的一例的黏晶機的實施例。 [實施例1]
圖23是表示第一實施例的黏晶機的概略的上面圖。圖24是說明在圖23中從箭號A方向看時,拾取頭及接合頭的動作的圖。
黏晶機10是大致區分具有:供給安裝於基板S的晶粒D的晶粒供給部1、拾取部2、中間平台部3、接合部4、搬送部5、基板供給部6、基板搬出部7、及監視控制各部的動作的控制裝置8。Y軸方向為黏晶機10的前後方向,X軸方向為左右方向。晶粒供給部1會被配置於黏晶機10的前側,接合部4會被配置於後側。在此,基板S是被印刷有成為最終1封裝的一個或複數的製品區域(以下稱為封裝區域P)。
首先,晶粒供給部1是供給安裝於基板S的封裝區域P的晶粒D。 晶粒供給部1是具有: 保持晶圓11的晶圓保持台12;及 從晶圓11剝離晶粒D的以點線所示的剝離單元13。 晶粒供給部1是藉由未圖示的驅動手段來移動於XY軸方向,使拾取的晶粒D移動至剝離單元13的位置。
拾取部2是具有: 拾取晶粒D的拾取頭21; 使拾取頭21移動於Y軸方向的拾取頭的Y軸驅動部23;及 使夾頭22昇降、旋轉及X軸方向移動的未圖示的各驅動部。 拾取頭21是具有將被剝離的晶粒D吸附保持於前端的夾頭22(圖24也參照),從晶粒供給部1拾取晶粒D,載置於中間平台31。拾取頭21是具有使夾頭22昇降、旋轉及X軸方向移動的未圖示的各驅動部。
中間平台部3是具有:暫時性地載置晶粒D的中間平台31、及用以識別中間平台31上的晶粒D的平台識別相機32。
接合部4是從中間平台31拾取晶粒D,接合於搬送來的基板S的封裝區域P上,或以在已經被接合於基板S的封裝區域P上的晶粒上層疊的形式接合。 接合部4是具有: 具備與拾取頭21同樣地將晶粒D吸附保持於前端的夾頭42(圖24也參照)之接合頭41; 使接合頭41移動於Y軸方向的Y軸驅動部43;及 將基板S的封裝區域P的位置識別標記(未圖示)攝像,識別接合位置的基板識別相機44。 Y軸驅動部43是以實施形態及第一變形例~第四變形例的任一者或組合該等的機台所構成。接合頭41是實施形態的被驅動體108。藉由如此的構成,接合頭41是根據平台識別相機32的攝像資料來修正拾取位置・姿勢,從中間平台31拾取晶粒D,根據基板識別相機44的攝像資料來將晶粒D接合於基板。
搬送部5是具有:將基板S抓住搬送的基板搬送爪51、及基板S移動的搬送道52。基板S是藉由以沿著搬送道52而設的未圖示的滾珠螺桿來驅動被設在搬送道52的基板搬送爪51的未圖示的螺帽(nut)而移動。藉由如此的構成,基板S是從基板供給部6沿著搬送道52來移動至接合位置,接合後,移動至基板搬出部7,將基板S交接至基板搬出部7。
控制裝置8是對應於實施形態的控制裝置110,具備:儲存監視控制黏晶機10的各部的動作的程式(軟體)之記憶體、及實行被儲存於記憶體的程式之中央處理裝置(CPU)。
其次,利用圖25來說明有關晶粒供給部1的構成。圖25是表示圖23的晶粒供給部的主要部的概略剖面圖。
晶粒供給部1是具備: 移動於水平方向(XY平面)的晶圓保持台12;及 移動於上下方向的剝離單元13。 晶圓保持台12是具有: 保持晶圓環14的擴充環15;及 被保持於晶圓環14,將黏著複數的晶粒D的切割膠帶16定位於水平的支撐環17。 剝離單元13是被配置於支撐環17的內側。
晶粒供給部1是在晶粒D的頂起時,使保持晶圓環14的擴充環15下降。其結果,被保持於晶圓環14的切割膠帶16會被拉伸,晶粒D的間隔會擴大,藉由剝離單元13從切割膠帶16剝離晶粒D,使晶粒D的拾取性提升。另外,將晶粒黏著於基板的黏著劑是從液狀成為薄膜狀,在晶圓11與切割膠帶16之間貼附被稱為晶粒黏結薄膜(DAF;Die Attach Film)18的薄膜狀的黏著材料。在具有晶粒黏結薄膜18的晶圓11中,切割是對於晶圓11與晶粒黏結薄膜18進行。因此,在剝離工序中,從切割膠帶16剝離晶圓11與晶粒黏結薄膜18。
其次,利用圖26來說明有關使用第一實施例的黏晶機的半導體裝置的製造方法。圖26是表示使用圖23的黏晶機之半導體裝置的製造方法的流程圖。
(晶圓・基板搬入工序:步驟S11) 將保持了貼附有從晶圓11分割的晶粒D的切割膠帶16的晶圓環14儲存於晶圓盒(未圖示),搬入至黏晶機10。控制裝置8是從充填有晶圓環14的晶圓盒將晶圓環14供給至晶粒供給部1。並且,準備基板S,搬入至黏晶機10。控制裝置8是以基板供給部6來將基板S安裝於基板搬送爪51。
(拾取工序:步驟S12) 控制裝置8是如上述般剝離晶粒D,從晶圓11拾取剝離後的晶粒D。如此,與一片的晶粒黏結薄膜18一起從切割膠帶16剝離的晶粒D是被吸附、保持於夾頭22而搬送至次工序(步驟S13)。然後,一旦將晶粒D搬送至次工序的夾頭22回來到晶粒供給部1,則按照上述的程序,其次的晶粒D從切割膠帶16剝離,以後按照同樣的程序,晶粒D從切割膠帶16一個一個剝離。
(接合工序:步驟S13) 控制裝置8是將拾取後的晶粒搭載於基板S上或層疊於已接合的晶粒上。控制裝置8是將從晶圓11拾取後的晶粒D載置於中間平台31,以接合頭41從中間平台31再度拾取晶粒D,接合於被搬送來的基板S。
(基板搬出工序:步驟S14) 控制裝置8是以基板搬出部7從基板搬送爪51取出接合有晶粒D的基板S。從黏晶機10搬出基板S。
如上述般,晶粒D是經由晶粒黏結薄膜18來安裝於基板S上,從黏晶機搬出。然後,以打線接合工序經由Au接線來與基板S的電極電性連接。接著,安裝有晶粒D的基板S會被搬入至黏晶機,在被安裝於基板S上的晶粒D上經由晶粒黏結薄膜18來層疊第2晶粒D,從黏晶機搬出之後,以打線接合工序經由Au接線來與基板S的電極電性連接。第2晶粒D是以前述的方法從切割膠帶16剝離之後,被搬送至帶顆粒工序來層疊於晶粒D上。上述工序重複預定次數之後,將基板S搬送至模製工序,以模製樹脂(未圖示)來密封複數個的晶粒D及Au接線,藉此完成層疊封裝。 [實施例2]
圖27是表示第二實施例的黏晶機的概略的上面圖。
第二實施例的黏晶機10是大致區分以晶圓供給部301、工件供給・搬送部305、預成型(preform)部302、黏晶部304、及監視控制各部的動作的控制裝置308所構成。
晶圓供給部301是具備晶圓盒升降機311及晶圓環夾具312。工件供給・搬送部305是具備框架推桿(frame pusher)353、裝載器升降機354、框架進給器(frame feeder)355、裝載機356及卸載機357。黏晶部304是具備接合頭341及接合機台343。預成型部302是具備預成型頭(preform head)321及預成型機台323。
將充填有晶圓環14的晶圓盒設定於晶圓盒升降機311,供給晶圓環14至晶圓環夾具312。與此並行,由裝載機356的框架推桿353或裝載器升降機354所供給的工件是藉由預成型部302來晶粒黏著劑的塗佈或洗滌,至接合點為止搬送於框架進給器355上。
晶圓環夾具312是與第一實施例同樣,將切割膠帶(未圖示)拉伸(延伸(expand))至下面,擴大晶粒(未圖示)的間隔,使晶粒拾取性提升。然後,藉由頂起部313,從晶粒的下方隔著切割膠帶來頂起晶粒,藉由接合頭341來拾取,進一步對引線架等的工件(未圖示)進行黏晶。晶圓環夾具312是被配置於XY直動機台上,拾取後直動移動至次晶粒位置為止,重複黏晶動作。
接合頭341是被設置於接合機台343。接合機台343是實施形態及第一變形例~第四變形例的機台之中的任一個或組合該等的機台之中的幾個者。驅動預成型頭321的預成型機台323、驅動晶圓環夾具312的XY機台、驅動頂起部313的XY機台是亦可為實施形態及第一變形例~第四變形例之中的任一個或組合該等者。
以上,根據實施形態、變形例及實施例具體說明了本案者們所揭示者,但本案是不被限定於上述實施形態、變形例及實施例者,當然亦可為各種的變更。
例如,在實施形態中,說明了使驅動體水平平面內移動的機台的例子,但亦可適用在將驅動體移動於上下方向的機台。
在實施形態中,說明了接合頭的例子作為被驅動體,但亦可為在第一實施例的基板識別相機等的黏晶機構所使用的光學系單元。
第一變形例是說明了計測加速度而抑制振動的例子,但亦可藉由感知振動的感測器來拾取別單元的機台等的振動而反饋,藉此進行裝置內的振動抑制。亦即,使用感知振動的感測器,拾取別單元動作時的振動,直接變換成反相位,發送指令給移動反作用的固定子104的第二可動子106,藉此抑制振動。例如,在XYZ的3軸皆設置同樣的構造,以消除從立體加速度感測器或線性感測器算出的加速度的合成波形之方式,使實際不使動作的軸的固定子動作而抑制振動。在此,不使動作的軸的第一可動子是以使維持原本的位置之方式動作。
又,第一實施例的Y軸驅動部23是亦可以組合實施形態及第一變形例~第六變形例的任一者或該等的機台所構成。
又,第一實施例是說明了有關以拾取頭來從晶粒供給部拾取晶粒而載置於中間平台,以接合頭來將被載置於中間平台的晶粒接合於基板的黏晶機,但實施形態的機台是可適用於從晶粒供給部拾取晶粒,將晶粒拾取頭旋轉至上面,而將晶粒交接至傳送頭或接合頭,以接合頭來接合於基板的覆晶黏晶機(Flip Chip Bonder)。
10:黏晶機(黏晶裝置) 101:基座 102:第一直動引導裝置 103:第二直動引導裝置 104:固定子 105:第一可動子 106:第二可動子 108:被驅動體 110:控制裝置
[圖1]是實施形態的機台的上面圖。 [圖2]是圖1的機台的正面圖。 [圖3]是圖1的A-A線的剖面圖。 [圖4]是圖1的B-B線的剖面圖。 [圖5]是實施形態的機台的立體圖。 [圖6]是說明圖5所示的機台的反動吸收動作的立體圖。 [圖7]是在圖5所示的機台中將固定子移動於與圖6相反方向時的立體圖。 [圖8]是說明圖7所示的機台的第一可動子的行程的立體圖。 [圖9]是第一變形例的機台的立體圖。 [圖10]是表示第一可動子的速度與加速度、固定子的加速度的波形的圖。 [圖11]是第二變形例的機台的立體圖。 [圖12]是第三變形例的機台的立體圖。 [圖13(a)]是第五變形例的機台的相當於圖1的B-B線的剖面圖的圖,[圖13(b)]是第五變形例的其他的例子的機台的相當於圖1的B-B線的剖面圖的圖。 [圖14]是第四變形例的機台的上面圖。 [圖15]是圖14的機台的正面圖。 [圖16]是圖14的C-C線的剖面圖。 [圖17]是圖14的D-D線的剖面圖。 [圖18]是說明第四變形例的機台的第一反動吸收動作的立體圖。 [圖19]是說明第四變形例的機台的第二反動吸收動作的立體圖。 [圖20]是表示將第四變形例的機台的第二可動子移動至預定位置的狀態的立體圖。 [圖21]是表示將第四變形例的機台的固定子移動於行進方向的狀態的立體圖。 [圖22]是表示將第四變形例的機台的第一可動子移動於行進方向的狀態的立體圖。 [圖23]是表示第一實施例的黏晶機的概略的上面圖。 [圖24]是說明在圖23中從箭號A方向看時,拾取頭及接合頭的動作的圖。 [圖25]是表示圖23的晶粒供給部的主要部的概略剖面圖。 [圖26]是表示使用圖23的黏晶機的半導體裝置的製造方法的流程圖。 [圖27]是表示第二實施例的黏晶機的概略的上面圖。 [圖28]是第六變形例的機台的立體圖。 [圖29]是表示第一可動子及固定子的速度與時間的關係的圖。 [圖30]是第七變形例的機台的上面圖。 [圖31]是圖30所示的機台的正面圖。 [圖32]是圖30所示的機台的背面圖。 [圖33]是圖30所示的機台的左側面圖。 [圖34]是第八變形例的機台的上面圖。 [圖35]是圖34所示的機台的背面圖。
10:黏晶機(黏晶裝置)
100:機台
101:基座
102:第一直動引導裝置
103:第二直動引導裝置
104:固定子
105:第一可動子
106:第二可動子
107:標度
108:被驅動體
110:控制裝置

Claims (23)

  1. 一種黏晶裝置,其特徵係具備:被驅動體;及驅動前述被驅動體的機台,前述機台係具備:基座;具備使前述被驅動體移動的第一可動子及固定子的線性馬達;被設在前述基座與前述固定子之間,使前述固定子自由地移動的第一直動引導裝置;被設在前述基座與前述第一可動子之間,使前述第一可動子自由地移動的第二直動引導裝置;固定於前述基座而設的第二可動子;及控制前述第一可動子及前述第二可動子的控制裝置,前述控制裝置係被構成為藉由前述第二可動子來使前述固定子沿著前述第一直動引導裝置而移動。
  2. 如請求項1的黏晶裝置,其中,前述控制裝置係被構成為使前述第一可動子沿著前述第二直動引導裝置來移動於第一方向,且藉由前述第二可動子來使前述固定子沿著前述第一直動引導裝置而移動於與前述第一方向相反方向的第二方向,藉此抑制前述被驅動體的動作時的振動。
  3. 如請求項1的黏晶裝置,其中,具備測出前述第一可動子的位置的第一線性感測器, 前述控制裝置係被構成為根據前述第一線性感測器的輸出來進行前述第一可動子的位置控制或速度控制或往目的位置的移動控制。
  4. 如請求項3的黏晶裝置,其中,具備測出前述固定子的位置的第二線性感測器,前述控制裝置係被構成為根據前述第二線性感測器的輸出來對前述固定子進行位置控制或速度控制或往目的位置的移動控制。
  5. 如請求項1的黏晶裝置,其中,具備:測出前述第一可動子的相對於前述固定子的位置的第一線性感測器;及測出前述固定子的相對於前述基座的位置的第二線性感測器,前述控制裝置係被構成為根據前述第一線性感測器及第二線性感測器的輸出來進行前述第一可動子的位置控制或速度控制或往目的位置的移動控制。
  6. 一種黏晶裝置,其特徵係具備:被驅動體;及驅動前述被驅動體的機台,前述機台係具備:基座;具備使前述被驅動體移動的第一可動子及固定子的線性馬達;被設在前述基座與前述固定子之間,使前述固定子移 動的第一直動引導裝置;第二可動子;被設在前述基座與前述第一可動子及前述第二可動子之間,使前述第一可動子及前述第二可動子移動的第二直動引導裝置;進行前述固定子的固定及固定解除的第一固定部;進行前述第二可動子的固定及固定解除的第二固定部;及控制前述第一可動子、前述第二可動子、前述第一固定部及前述第二固定部的控制裝置。
  7. 如請求項6的黏晶裝置,其中,前述控制裝置係被構成為:可藉由前述第一固定部來移動前述固定子,且藉由前述第二固定部來固定前述第二可動子,使前述第一可動子沿著前述第二直動引導裝置來移動於第一方向,且藉由前述第二可動子來使前述固定子沿著前述第一直動引導裝置而移動於與前述第一方向相反方向的第二方向,藉此抑制前述被驅動體的動作時的振動。
  8. 如請求項6的黏晶裝置,其中,前述控制裝置係被構成為:藉由前述第一固定部來固定前述固定子,且可藉由前述第二固定部來移動前述第二可動子,使前述第一可動子沿著前述第二直動引導裝置來移動於第一方向,且使前述第二可動子沿著前述第二直動引導 裝置來移動於與前述第一方向相反方向的第二方向,藉此抑制前述被驅動體的動作時的振動。
  9. 如請求項6的黏晶裝置,其中,前述控制裝置係被構成為:藉由前述第一固定部來固定前述固定子,且可藉由前述第二固定部來移動前述第二可動子,使前述第二可動子沿著前述第二直動引導裝置來預定距離移動於第一方向,可藉由前述第一固定部來移動前述固定子,且藉由前述第二固定部來固定前述第二可動子,藉由前述第二可動子來使前述固定子沿著前述第一直動引導裝置而移動於與前述第一方向相反方向的第二方向,藉此擴大前述第一可動子的前述第一方向的可動範圍。
  10. 如請求項1~5的任一項的黏晶裝置,其中,前述控制裝置係被構成為藉由前述第二可動子來使前述固定子沿著前述第一直動引導裝置而移動於第一方向,藉此擴大前述第一可動子的前述第一方向的可動範圍。
  11. 如請求項1~5的任一項的黏晶裝置,其中,前述固定子係具備複數的永久磁石及結合前述複數的永久磁石之中的鄰接的前述永久磁石的複數的組合的磁束之磁軛,前述第一可動子係具備:被配置於前述固定子的上方,形成電磁石的第一線圈部;及被配置於前述第二直動引導裝置上,支撐前述第一線 圈部的支撐體,前述第二可動子係具備:被配置於前述固定子的上方,形成電磁石的第二線圈部;及被配置於前述基座上,支撐前述第二線圈部的支撐體。
  12. 如請求項6~9的任一項的黏晶裝置,其中,前述固定子係具備複數的永久磁石及結合前述複數的永久磁石之中的鄰接的前述永久磁石的複數的組合的磁束之磁軛,前述第一可動子及前述第二可動子係分別具備:被配置於前述固定子的上方,形成電磁石的線圈部;及被配置於前述第二直動引導裝置上,支撐前述線圈部的支撐體,前述第一固定部係接近於前述固定子而配置,且以電磁石所構成,前述第二固定部為被設在前述第二可動子的前述支撐體之電磁石。
  13. 如請求項2、7、8的任一項的黏晶裝置,其中,前述控制裝置係被構成為加減速前述第一可動子時,前述固定子係根據與前述第一可動子的加速度時間波形相反相位的波形來控制前述第二可動子而使前述固定 子移動。
  14. 如請求項13的黏晶裝置,其中,前述控制裝置係被構成為經由網路來獨力地進行前述第一可動子及前述第二可動子的控制,與前述第一可動子的動作並行使前述第二可動子移動於同方向。
  15. 如請求項14的黏晶裝置,其中,前述被驅動體係於其前端具備加速度感測器,前述控制裝置係被構成為加減速前述第一可動子時,藉由前述加速度感測器來計測伴隨加速度產生的搖回的波形,且使反映至藉由前述第二可動子來使前述固定子動作的標準加速度波形。
  16. 如請求項2、7、8的任一項的黏晶裝置,其中,前述控制裝置係被構成為藉由前述第二可動子來賦予前述固定子推力,而使匹配前述第一可動子與前述固定子的重心位置即使在前述第一可動子的移動時也會經常形成與動作開始前的重心相同的位置。
  17. 如請求項16的黏晶裝置,其中,更具備2個以上的重量感測器,前述重量感測器,係與前述第一直動引導裝置或前述第二直動引導裝置平行地設在前述基座之下,或設在前述第一直動引導裝置及前述第二直動引導裝置的兩端部之下,前述基座之上,前述控制裝置,係被構成為記憶在前述第一可動子的移動前,前述重量感測器所檢測的重量,且在前述第一可 動子的動作時,以維持根據前述記憶的重量的重量平衡之方式,藉由前述第二可動子來使前述固定子移動。
  18. 如請求項2、7、8的任一項的黏晶裝置,其中,更具備:與前述機台不同的其他的機台、及檢測前述其他的機台的振動的感測器,前述控制裝置係被構成為根據前述檢測的振動,藉由前述第二可動子來移動前述固定子。
  19. 如請求項1~9的任一項的黏晶裝置,其中,前述固定子係具備複數的永久磁石及結合鄰接的前述永久磁石的磁束之磁軛,上面視與前述第二可動子重複的前述固定子的部分係比前述固定子的其他的部分更密地構成前述永久磁石的配置。
  20. 如請求項2、7、8的任一項的黏晶裝置,其中,在前述第一直動引導裝置的兩端部之下設置吸收上下方向的振動的平衡器或減振器。
  21. 如請求項1~9的任一項的黏晶裝置,其中,前述被驅動體為拾取晶粒接合於基板的接合頭。
  22. 如請求項1~9的任一項的黏晶裝置,其中,前述被驅動體為將晶粒黏著劑塗佈於基板或洗滌基板的預成型頭。
  23. 一種半導體裝置的製造方法,其特徵係具備:將基板搬入至黏晶裝置的基板搬入工序;及 拾取晶粒接合於前述基板的接合工序,前述接合工序,係使第一可動子沿著第二直動引導裝置來移動於第一方向,且藉由第二可動子來使固定子沿著第一直動引導裝置而移動於與前述第一方向相反方向的第二方向,前述黏晶裝置係具備:接合頭;驅動前述接合頭的機台;基座;具備使前述接合頭移動於水平平面內的前述第一可動子及前述固定子的線性馬達;被設在前述基座與前述固定子之間,使前述固定子自由地移動的前述第一直動引導裝置;被設在前述基座與前述第一可動子之間,使前述第一可動子自由地移動的前述第二直動引導裝置;及固定於前述基座而設的前述第二可動子。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201410379A (zh) * 2012-09-13 2014-03-16 Hitachi High Tech Instr Co Ltd 水平軸驅動機構、2軸驅動機構及晶片接合器
US20140367570A1 (en) * 2000-12-01 2014-12-18 Ebara Corporation Substrate inspection method and a substrate processing method

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
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TWI398931B (zh) 2009-07-03 2013-06-11 Wecon Automation Corp 驅動裝置及固晶機
JP2011233578A (ja) * 2010-04-23 2011-11-17 Hitachi High-Tech Instruments Co Ltd 反動吸収装置及び半導体組立装置
JP5997448B2 (ja) * 2012-01-31 2016-09-28 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
JP5941705B2 (ja) 2012-02-29 2016-06-29 ファスフォードテクノロジ株式会社 2軸駆動機構及びダイボンダ
JP2017081038A (ja) 2015-10-29 2017-05-18 富士通フロンテック株式会社 印字装置および印字制御方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140367570A1 (en) * 2000-12-01 2014-12-18 Ebara Corporation Substrate inspection method and a substrate processing method
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