TWI781725B - Display device - Google Patents
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Abstract
Description
本發明是有關於一種顯示裝置,且特別是有關於一種能夠提高5G毫米波覆蓋率同時保持良好顯示品質的顯示裝置。The present invention relates to a display device, and in particular to a display device capable of improving 5G millimeter wave coverage while maintaining good display quality.
隨著第五代行動通訊技術(5G)的商業化,遠距醫療、VR直播、4K畫質直播、智慧家庭等等應用都有了新的發展契機。由於5G具有高資料速率、減少延遲、節省能源、降低成本、提高系統容量和大規模裝置連接等效能,不同領域的業者還可進行跨界結盟,共同打造新一代的5G生態鏈。With the commercialization of the fifth-generation mobile communication technology (5G), applications such as telemedicine, VR live broadcast, 4K quality live broadcast, and smart home have new opportunities for development. Since 5G has high data rate, reduced delay, energy saving, cost reduction, increased system capacity and large-scale device connection, etc., operators in different fields can also form cross-border alliances to jointly create a new generation of 5G ecological chain.
為了提高5G毫米波的覆蓋率,可以藉由在顯示裝置中設置超表面結構(Meta-surface structure)來延伸電磁波的可傳輸距離。然而,由於超表面結構與顯示裝置中的顯示單元皆具有結構周期性,直接將超表面結構組合於顯示裝置中將產生所謂的疊紋效應(Moire Effect),導致顯示裝置的顯示品質降低。In order to improve the coverage of 5G millimeter waves, the transmittable distance of electromagnetic waves can be extended by setting a meta-surface structure (Meta-surface structure) in the display device. However, since both the metasurface structure and the display units in the display device have structural periodicity, directly combining the metasurface structure in the display device will produce a so-called moire effect, resulting in a decrease in the display quality of the display device.
本發明提供一種顯示裝置,能夠提高5G毫米波的覆蓋率,同時保持良好的顯示品質。The present invention provides a display device capable of improving the coverage of 5G millimeter waves while maintaining good display quality.
本發明的一個實施例提出一種顯示裝置,包括:元件陣列基板;第一超表面結構層,位於元件陣列基板的一側,且包括多組第一超表面結構組;以及第二超表面結構層,位於第一超表面結構層與元件陣列基板之間,且包括多組第二超表面結構組,其中,第一超表面結構組與第二超表面結構組的圖案互補。One embodiment of the present invention proposes a display device, comprising: an element array substrate; a first metasurface structure layer, located on one side of the element array substrate, and including multiple sets of first metasurface structure groups; and a second metasurface structure layer , is located between the first metasurface structure layer and the element array substrate, and includes multiple sets of second metasurface structure groups, wherein the patterns of the first metasurface structure group and the second metasurface structure group are complementary.
在本發明的一實施例中,還包括顯示元件層,位於第二超表面結構層與元件陣列基板之間。In an embodiment of the present invention, it further includes a display element layer located between the second supersurface structure layer and the element array substrate.
在本發明的一實施例中,還包括濾光基板,其中第一超表面結構層位於濾光基板與第二超表面結構層之間。In an embodiment of the present invention, a filter substrate is further included, wherein the first metasurface structure layer is located between the filter substrate and the second metasurface structure layer.
在本發明的一實施例中,還包括濾光基板,其中濾光基板位於第一超表面結構層與第二超表面結構層之間。In an embodiment of the present invention, a filter substrate is further included, wherein the filter substrate is located between the first metasurface structure layer and the second metasurface structure layer.
在本發明的一實施例中,還包括濾光基板,其中第二超表面結構層位於濾光基板與第一超表面結構層之間。In an embodiment of the present invention, a filter substrate is further included, wherein the second metasurface structure layer is located between the filter substrate and the first metasurface structure layer.
在本發明的一實施例中,上述的多組第一超表面結構組或多組第二超表面結構組彼此相同或不同。In an embodiment of the present invention, the above-mentioned multiple sets of first metasurface structure sets or multiple sets of second metasurface structure sets are the same or different from each other.
在本發明的一實施例中,上述的第一超表面結構組及第二超表面結構組分別包括多個超表面結構,且多個超表面結構具有彼此相同的形狀及彼此不同的尺寸、間距或方位。In an embodiment of the present invention, the above-mentioned first metasurface structure group and the second metasurface structure group respectively include a plurality of metasurface structures, and the plurality of metasurface structures have the same shape and different sizes and spacings from each other. or bearing.
在本發明的一實施例中,上述的第一超表面結構組包括多個第一超表面結構,第二超表面結構組包括多個第二超表面結構,且第二超表面結構具有對應第一超表面結構的開口,其中第一超表面結構的長度與對應的第二超表面結構的開口的長度之比介於0.99-1.01。In an embodiment of the present invention, the above-mentioned first metasurface structure group includes a plurality of first metasurface structures, the second metasurface structure group includes a plurality of second metasurface structures, and the second metasurface structures have corresponding An opening of the metasurface structure, wherein the ratio of the length of the first metasurface structure to the length of the corresponding opening of the second metasurface structure is 0.99-1.01.
在本發明的一實施例中,上述的第一超表面結構組包括多個第一超表面結構,第二超表面結構組包括多個第二超表面結構,且第二超表面結構具有對應第一超表面結構的開口,其中第一超表面結構之間的間距與對應的第二超表面結構的開口之間的間距之比介於0.99-1.01。In an embodiment of the present invention, the above-mentioned first metasurface structure group includes a plurality of first metasurface structures, the second metasurface structure group includes a plurality of second metasurface structures, and the second metasurface structures have corresponding The openings of a metasurface structure, wherein the ratio of the spacing between the first metasurface structures to the corresponding spacing between the openings of the second metasurface structure is 0.99-1.01.
在本發明的一實施例中,上述的第一超表面結構組及第二超表面結構組包括透明導電材料。In an embodiment of the present invention, the above-mentioned first metasurface structure group and second metasurface structure group include transparent conductive materials.
本發明的一個實施例提出一種顯示裝置,包括:元件陣列基板;第一超表面結構層,位於元件陣列基板的一側,且包括多組第一超表面結構組;以及第二超表面結構層,位於第一超表面結構層與元件陣列基板之間,且包括多組第二超表面結構組,其中,第二超表面結構組的面積大於第一超表面結構組的面積。One embodiment of the present invention proposes a display device, comprising: an element array substrate; a first metasurface structure layer, located on one side of the element array substrate, and including multiple sets of first metasurface structure groups; and a second metasurface structure layer , is located between the first metasurface structure layer and the element array substrate, and includes multiple sets of second metasurface structure groups, wherein the area of the second metasurface structure group is larger than the area of the first metasurface structure group.
在本發明的一實施例中,上述的第二超表面結構組接地。In an embodiment of the present invention, the above-mentioned second metasurface structure group is grounded.
在本發明的一實施例中,上述的第一超表面結構組於元件陣列基板的正投影重疊第二超表面結構組於元件陣列基板的正投影。In an embodiment of the present invention, the above-mentioned orthographic projection of the first metasurface structure group on the device array substrate overlaps the orthographic projection of the second metasurface structure group on the device array substrate.
在本發明的一實施例中,上述的第二超表面結構組位於元件陣列基板中。In an embodiment of the present invention, the above-mentioned second metasurface structure group is located in the device array substrate.
在本發明的一實施例中,還包括顯示元件層,位於第一超表面結構層與第二超表面結構層之間。In an embodiment of the present invention, it further includes a display element layer located between the first super-surface structure layer and the second super-surface structure layer.
在本發明的一實施例中,上述的第一超表面結構組及第二超表面結構組包括不透明導電材料。In an embodiment of the present invention, the above-mentioned first set of metasurface structures and the second set of metasurface structures include opaque conductive materials.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.
圖1A是依照本發明一實施例的顯示裝置10的局部剖面示意圖。圖1B是圖1A的顯示裝置10的超表面結構層120的局部平面示意圖。圖1C是圖1A的顯示裝置10的超表面結構層130的局部平面示意圖。FIG. 1A is a schematic partial cross-sectional view of a
請同時參照圖1A至圖1C,顯示裝置10包括:元件陣列基板110;超表面結構層120,位於元件陣列基板110的一側,且包括多組超表面結構組MS1;以及超表面結構層130,位於超表面結構層120與元件陣列基板110之間,且包括多組超表面結構組MS2,其中,超表面結構組MS1與超表面結構組MS2的圖案互補。Please refer to FIG. 1A to FIG. 1C at the same time, the
在本發明的一實施例的顯示裝置10中,藉由設置超表面結構組MS1、130來控制電磁波的相位延遲,可實現電磁波的波束轉向(beam steering),使得顯示裝置10有助於延伸電磁波的可傳輸距離,進而提高5G毫米波的覆蓋率。另外,藉由使超表面結構組MS1與超表面結構組MS2具有互補的圖案,能夠彌補穿透率不均及防止疊紋效應,從而保持良好的顯示品質。In the
以下,配合圖式,繼續說明顯示裝置10的各個元件的實施方式。請參照圖1A,顯示裝置10的元件陣列基板110可以包括透明基板或非透明基板,且其材質可以是石英、玻璃、高分子或其他適當的材質,但本發明不以此為限。在本實施例中,元件陣列基板110還可以包括驅動電路層DL,且驅動電路層DL可以包括顯示裝置10需要的線路或元件,例如電源線、驅動訊號線、時序訊號線、檢測訊號線、電流補償線、驅動元件、開關元件、儲存電容等等,而且上述線路或元件可以透過接墊或導線與驅動電路層DL外部的線路或元件電性連接。Hereinafter, with reference to the drawings, the implementation of each component of the
超表面結構層120位於元件陣列基板110上。超表面結構層120的超表面結構組MS1可以包括構成最小重複單元的多個超表面結構。舉例而言,在本實施例中,超表面結構B1、B2、B3構成了最小重複單元,因此,超表面結構組MS1可以包括超表面結構B1、B2、B3。由於尺寸不同的超表面結構B1、B2、B3具有不同的電磁波共振頻率,當特定頻率的電磁波入射於超表面結構B1、B2、B3時,超表面結構B1、B2、B3將產生相位延遲量不同的感應電流,進而改變反射電磁波的相位。如此一來,藉由控制超表面結構B1、B2、B3的尺寸即可控制感應電流的相位延遲量,同時藉由超表面結構B1、B2、B3的尺寸變化能夠控制電磁波的發射角度,從而實現波束轉向的功效。The
超表面結構層120的多組超表面結構組MS1可以彼此相同或彼此不同。舉例而言,在本實施例中,超表面結構層120可以包括多組彼此相同的超表面結構組MS1,也就是說,超表面結構組MS1可以具有彼此相同的形狀、尺寸、方位等,但本發明不以此為限。在一些實施例中,超表面結構層120可以包括形狀、尺寸及/或方位等彼此不同的多組超表面結構組。The sets of metasurface structure groups MS1 of the
超表面結構組MS1可大致以陣列的方式排列。舉例而言,在如圖1B所示的實施例中,六組超表面結構組MS1可大致以2x3的矩陣排列,但不以此為限。在一些實施例中,六組超表面結構組MS1還可以1x6、3x2或6x1的矩陣排列。The metasurface structure group MS1 can be roughly arranged in an array. For example, in the embodiment shown in FIG. 1B , the six sets of metasurface structure sets MS1 can be roughly arranged in a 2×3 matrix, but not limited thereto. In some embodiments, the six sets of metasurface structure sets MS1 can also be arranged in a matrix of 1x6, 3x2 or 6x1.
超表面結構組MS1中的超表面結構B1、B2、B3可以具有彼此相同的形狀、但彼此不同的尺寸。舉例而言,在本實施例中,超表面結構組MS1的超表面結構B1、B2、B3可以皆為十字結構,且超表面結構B1的尺寸大於超表面結構B2的尺寸,超表面結構B2的尺寸大於超表面結構B3的尺寸。也就是說,超表面結構B1、B2、B3的形狀相同但尺寸不同,且超表面結構B1、B2、B3的尺寸呈現遞減的關係。應注意的是,超表面結構B1、B2、B3的形狀並不限於如圖1B所示的十字結構,超表面結構B1、B2、B3的尺寸變化還可就其三維尺寸進行個別變化或組合變化,且個別超表面結構組MS1中的超表面結構B1、B2、B3的形狀、尺寸及方位還可個別進行微調,以實現所需的波束轉向。The metasurface structures B1 , B2 , B3 in the metasurface structure group MS1 may have the same shape as each other but different sizes from each other. For example, in this embodiment, the metasurface structures B1, B2, and B3 of the metasurface structure group MS1 can all be cross structures, and the size of the metasurface structure B1 is larger than the size of the metasurface structure B2, and the size of the metasurface structure B2 The size is larger than that of the metasurface structure B3. That is to say, the metasurface structures B1 , B2 , B3 have the same shape but different sizes, and the sizes of the metasurface structures B1 , B2 , B3 show a decreasing relationship. It should be noted that the shapes of the metasurface structures B1, B2, and B3 are not limited to the cross structure shown in Figure 1B, and the size changes of the metasurface structures B1, B2, and B3 can also be changed individually or in combination with respect to their three-dimensional dimensions. , and the shapes, sizes and orientations of the metasurface structures B1, B2, and B3 in the individual metasurface structure group MS1 can also be individually fine-tuned to achieve the required beam steering.
超表面結構B1、B2、B3的尺寸可以取決於入射電磁波的波長。舉例而言,在本實施例中,對於毫米波的電磁波而言,超表面結構B1、B2、B3的尺寸可以介於0.01 x 0.01 mm 2至10 x 10 mm 2之間,但不以此為限。此外,在本實施例中,超表面結構B1、B2、B3的材質可以包括透明導電材料,例如銦錫氧化物、鋅鋁氧化物、鋅鎵氧化物、鋅銦氧化物等。 The size of the metasurface structures B1, B2, B3 may depend on the wavelength of the incident electromagnetic wave. For example, in this embodiment, for millimeter-wave electromagnetic waves, the size of the metasurface structures B1, B2, and B3 can be between 0.01 x 0.01 mm 2 and 10 x 10 mm 2 , but this is not a limitation. limit. In addition, in this embodiment, the material of the metasurface structures B1 , B2 , B3 may include transparent conductive materials, such as indium tin oxide, zinc aluminum oxide, zinc gallium oxide, zinc indium oxide, and the like.
超表面結構層130可以包括多組超表面結構組MS2,超表面結構組MS2可以包括超表面結構C1、C2、C3,且超表面結構C1、C2、C3的圖案分別與超表面結構組MS1的超表面結構B1、B2、B3互補。舉例而言,在本實施例中,超表面結構C1、C2、C3可以分別具有開口O1、O2、O3,且開口O1、O2、O3的形狀及尺寸與超表面結構B1、B2、B3的形狀及尺寸可以相同或近似,使得超表面結構層120、130的圖案能夠互補。也就是說,若將超表面結構B1、B2、B3分別置於超表面結構C1、C2、C3的開口O1、O2、O3中,將可形成平板或近似平板的結構。The
在本實施例中,超表面結構C1、C2、C3的材質可以包括透明導電材料,例如銦錫氧化物、鋅鋁氧化物、鋅鎵氧化物、鋅銦氧化物等。另外,顯示裝置10還可以包括絕緣層I1、I2以及濾光基板CG,其中超表面結構層120可以位於濾光基板CG與超表面結構層130之間,且超表面結構層120可以位於濾光基板CG與絕緣層I1之間,超表面結構層130可以位於絕緣層I1與絕緣層I2之間,以避免不必要的電性連接。In this embodiment, the material of the metasurface structures C1, C2, and C3 may include transparent conductive materials, such as indium tin oxide, zinc aluminum oxide, zinc gallium oxide, zinc indium oxide, and the like. In addition, the
在一些實施例中,考量到製程合理性及視覺效果,超表面結構層120的超表面結構組MS1的超表面結構B1、B2、B3與超表面結構層130的超表面結構組MS2的超表面結構C1、C2、C3於元件陣列基板110的正投影可以部分重疊或分開1%,但不以此為限。舉例而言,在一些實施例中,超表面結構層120的超表面結構B1、B2之間的間距W1與超表面結構層130中對應的超表面結構C1、C2的開口O1、O2之間的間距W2之比可以介於0.99-1.01。在一些實施例中,超表面結構層120的超表面結構B3的橫向長度W3與超表面結構層130中對應的超表面結構C3的開口O3的橫向長度W4之比也可以介於0.99-1.01。In some embodiments, considering the process rationality and visual effect, the metasurface structures B1, B2, B3 of the metasurface structure group MS1 of the
由於超表面結構具有圖案相反時對於電磁波的表現(例如穿透率)也相反的特性,當超表面結構組MS1對於毫米波訊號具有低穿透率時,超表面結構組MS2對於毫米波訊號可具有高穿透率。如此一來,大部分的毫米波訊號將被超表面結構組MS1反射而不會前往下方的超表面結構組MS2,在此情況下,對於毫米波訊號的作用主要來自超表面結構組MS1,而超表面結構組MS2將不會影響毫米波訊號的特性。同時,圖案互補的超表面結構組MS1與超表面結構組MS2將使得顯示裝置10對於可見光具有均勻的穿透率,且可防止疊紋效應。Since the metasurface structure has the opposite characteristic for electromagnetic wave performance (such as transmittance) when the pattern is opposite, when the metasurface structure group MS1 has a low transmittance for millimeter wave signals, the metasurface structure group MS2 can be used for millimeter wave signals. Has a high penetration rate. In this way, most of the millimeter wave signal will be reflected by the metasurface structure group MS1 and will not go to the metasurface structure group MS2 below. In this case, the effect on the millimeter wave signal mainly comes from the metasurface structure group MS1, and The metasurface group MS2 will not affect the characteristics of mmWave signals. At the same time, the metasurface structure group MS1 and the metasurface structure group MS2 with complementary patterns will enable the
以下,配合圖2至圖8繼續說明本發明的其他實施例或實施態樣,其中,採用與圖1A至圖1C的實施例相同或近似的元件標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明,可參考圖1A至圖1C的實施例,在以下的說明中將不再贅述。In the following, other embodiments or implementation aspects of the present invention will be described in conjunction with FIGS. 2 to 8 , wherein the same or similar element numbers as those in the embodiment of FIGS. 1A to 1C are used to denote the same or similar elements, and omitted Description of the same technical content. For the description of the omitted parts, reference may be made to the embodiment shown in FIG. 1A to FIG. 1C , which will not be repeated in the following description.
圖2是依照本發明一實施例的顯示裝置20的局部剖面示意圖。顯示裝置20包括:元件陣列基板110、超表面結構層120、超表面結構層130、濾光基板CG以及絕緣層I2。與圖1A至圖1C所示的顯示裝置10相比,如圖2所示的顯示裝置20的不同之處在於:顯示裝置20還可以包括彩色濾光結構CF及遮光結構BM,且彩色濾光結構CF及遮光結構BM可以取代顯示裝置10的絕緣層I1,而位於超表面結構層120與超表面結構層130之間。也就是說,超表面結構層120、130可以設置於濾光基板CG之內,且超表面結構層120、130可以位於彩色濾光結構CF及遮光結構BM的相對側。FIG. 2 is a schematic partial cross-sectional view of a
圖3A是依照本發明一實施例的顯示裝置30的局部剖面示意圖。圖3B是圖3A的顯示裝置30的超表面結構層123的局部平面示意圖。圖3C是圖3A的顯示裝置30的超表面結構層133的局部平面示意圖。顯示裝置30包括:元件陣列基板110、超表面結構層123、超表面結構層133、濾光基板CG以及絕緣層I1、I2。與圖1A至圖1C所示的顯示裝置10相比,如圖3所示的顯示裝置30的不同之處在於:顯示裝置30的超表面結構層123包括如圖1C所示的超表面結構組MS2,且超表面結構層133包括如圖1B所示的超表面結構組MS1。FIG. 3A is a schematic partial cross-sectional view of a
在本實施例中,由於超表面結構層123的超表面結構組MS2對於毫米波訊號具有高穿透率,且超表面結構層133的超表面結構組MS1對於毫米波訊號具有低穿透率,大部分的毫米波訊號將穿透超表面結構層123的超表面結構組MS2,且隨後被超表面結構層133的超表面結構組MS1反射。在此情況下,對於毫米波訊號的作用主要仍來自超表面結構組MS1,且超表面結構組MS2同樣不會影響毫米波訊號的特性。同樣地,圖案互補的超表面結構組MS1與超表面結構組MS2將使得顯示裝置30對於可見光具有均勻的穿透率,且可防止疊紋效應。In this embodiment, since the metasurface structure group MS2 of the
圖4是依照本發明一實施例的顯示裝置40的局部剖面示意圖。顯示裝置40包括:元件陣列基板110、超表面結構層120、超表面結構層130、濾光基板CG、絕緣層I2、彩色濾光結構CF以及遮光結構BM。與圖2所示的顯示裝置20相比,如圖4所示的顯示裝置40的不同之處在於:顯示裝置40還可以包括位於濾光基板CG上的透光蓋板US,且超表面結構層120可以位於蓋板US與濾光基板CG之間,超表面結構層130可以位於彩色濾光結構CF以及遮光結構BM與濾光基板CG之間。也就是說,超表面結構層120可以位於濾光基板CG之外,且超表面結構層130可以位於濾光基板CG之內,使得濾光基板CG可以位於超表面結構層120與超表面結構層130之間。FIG. 4 is a schematic partial cross-sectional view of a
圖5是依照本發明一實施例的顯示裝置50的局部剖面示意圖。顯示裝置50包括:元件陣列基板110、超表面結構層120、超表面結構層130、濾光基板CG、絕緣層I2、彩色濾光結構CF、遮光結構BM以及蓋板US。與圖4所示的顯示裝置40相比,如圖5所示的顯示裝置50的不同之處在於:顯示裝置50還可以包括位於超表面結構層120與超表面結構層130之間的絕緣層I1,且超表面結構層120可以位於蓋板US與絕緣層I1之間,超表面結構層130可以位於絕緣層I1與濾光基板CG之間。也就是說,超表面結構層120、130可以皆設置於濾光基板CG之外,且超表面結構層130可以位於濾光基板CG與超表面結構層120之間。FIG. 5 is a schematic partial cross-sectional view of a
圖6是依照本發明一實施例的顯示裝置60的局部剖面示意圖。顯示裝置60包括:元件陣列基板110、超表面結構層120、超表面結構層130、濾光基板CG、絕緣層I2、彩色濾光結構CF以及遮光結構BM。與圖2所示的顯示裝置20相比,如圖6所示的顯示裝置60的不同之處在於:顯示裝置60還可以包括顯示元件層LC(例如液晶層)、共用電極層CM以及偏光層P1、P2。FIG. 6 is a schematic partial cross-sectional view of a
在本實施例中,顯示裝置60可以是液晶顯示裝置,其中顯示元件層LC位於超表面結構層130與元件陣列基板110之間,共用電極層CM位於超表面結構層130與顯示元件層LC之間,且絕緣層I2位於超表面結構層130與共用電極層CM之間。另外,偏光層P1、P2分別位於顯示裝置60的最下側及最上側,且偏光層P2還可以進一步減少環境光的反射。In this embodiment, the
圖7是依照本發明一實施例的顯示裝置70的局部剖面示意圖。顯示裝置70包括:元件陣列基板110、超表面結構層120、超表面結構層130、濾光基板CG、絕緣層I2、彩色濾光結構CF以及遮光結構BM。與圖2所示的顯示裝置20相比,如圖7所示的顯示裝置70的不同之處在於:顯示裝置70還可以包括發光元件層LD。FIG. 7 is a schematic partial cross-sectional view of a
在本實施例中,顯示裝置70的發光元件層LD可以位於絕緣層I2與驅動電路層DL之間,且發光元件層LD可以包括多個發光元件,例如微型發光二極體(Micro-LED)或有機發光二極體(OLED),使得顯示裝置70可以是微型發光二極體或有機發光二極體顯示裝置。In this embodiment, the light-emitting element layer LD of the
圖8是依照本發明一實施例的顯示裝置80的局部剖面示意圖。顯示裝置80包括:元件陣列基板110、超表面結構層128、超表面結構層138、濾光基板CG、絕緣層I2、彩色濾光結構CF、遮光結構BM、顯示元件層LC、共用電極層CM以及偏光層P1、P2。與圖6所示的顯示裝置60相比,如圖8所示的顯示裝置80的不同之處在於:超表面結構層138的超表面結構組的面積大於超表面結構層128的超表面結構組的面積,且顯示元件層LC位於超表面結構層128與超表面結構層138之間。FIG. 8 is a schematic partial cross-sectional view of a
在本實施例中,超表面結構層128可以位於彩色濾光結構CF以及遮光結構BM與濾光基板CG之間,且超表面結構層138可以位於顯示元件層LC與元件陣列基板110之間。在一些實施例中,超表面結構層138的超表面結構組可以是元件陣列基板110的一部分而位於元件陣列基板110中。在一些實施例中,超表面結構層138的超表面結構組還可與元件陣列基板110中的導電層屬於相同膜層且電性分離。In this embodiment, the metasurface structure layer 128 may be located between the color filter structure CF and the light shielding structure BM and the filter substrate CG, and the
在本實施例中,超表面結構層138的超表面結構組可以接地,使得超表面結構層128、138的超表面結構組可以構成貼片天線(Patch antenna)。另外,超表面結構層128的超表面結構組於元件陣列基板110的正投影可以重疊超表面結構層138的超表面結構組於元件陣列基板110的正投影的一部分,使得超表面結構層138的超表面結構組還可充當顯示裝置80的反射電極。此外,超表面結構層128、138的超表面結構組可以包括不透明導電材料,例如具有高反射率的金屬。In this embodiment, the metasurface structure group of the
圖9是可用於本發明實施例的超表面結構的圖樣示意圖。在上述實施例中,超表面結構層120、123、128、130、133、138的超表面結構還可以具有諸如圖9所示的(a)直條、(b)人字、(c)人字錨、(d)十字、(e)萬字、(f)十字環、(g)人字環、(h)圓環、(i)方環、(j)六角環、(k)方塊、(l)六角塊、(m)圓塊、(n)亞字、(o)端折十字環、(p)人字環-三腳架等形狀或上述形狀的組合。FIG. 9 is a schematic diagram of a metasurface structure that can be used in embodiments of the present invention. In the above embodiments, the metasurface structure of the metasurface structure layers 120, 123, 128, 130, 133, 138 can also have (a) straight bars, (b) herringbone, (c) people word anchor, (d) cross, (e) swastika, (f) cross ring, (g) herringbone ring, (h) ring, (i) square ring, (j) hexagonal ring, (k) square, (l) Hexagonal block, (m) round block, (n) sub-shaped, (o) end-folded cross ring, (p) herringbone ring-tripod and other shapes or a combination of the above shapes.
圖10A是依照本發明一實施例的超表面結構層129的局部平面示意圖。與圖1B所示的超表面結構層120相比,如圖10A所示的超表面結構層129的不同之處在於:超表面結構層129包括彼此不同的超表面結構組集合129K、129L、129M、129N、129O。FIG. 10A is a schematic partial plan view of a
舉例而言,在本實施例中,超表面結構組集合129K、129L、129M、129N中的超表面結構具有彼此相同的十字結構形狀、但彼此不同的尺寸、間距及/或方位,且超表面結構組集合129O的超表面結構還可被分別添加移相線。詳細而言,超表面結構組集合129K的超表面結構可以具有不同的尺寸,因此可使入射電磁波產生反射或異常反射(anomalous reflection)。另外,超表面結構組集合129L的超表面結構可以具有不同的間距,因此可使入射電磁波散射而產生散射電磁波。另外,超表面結構組集合129M的超表面結構可以具有不同的方位,因此可對入射電磁波進行頻率偏移、強度調制或偏振態控制,而產生調制電磁波。此外,超表面結構組集合129N的超表面結構可以具有不同的尺寸及間距,因此可使入射電磁波產生聚焦電磁波。藉由在元件陣列基板110上同時具有多種不同型態的超表面結構組集合129K、129L、129M、129N,能夠同時對多種波長或多種入射角度的電磁波實現波束轉向或多方向波束散射,從而達成提升5G訊號覆蓋率的功效。For example, in this embodiment, the metasurface structures in the sets of
圖10B是依照本發明一實施例的超表面結構層139的局部平面示意圖。超表面結構層139具有與圖10A所示的超表面結構層129互補的圖案。舉例而言,超表面結構層139可以包括超表面結構組集合139K、139L、139M、139N、139O,且超表面結構組集合139K、139L、139M、139N、139O的圖案分別與超表面結構組集合129K、129L、129M、129N、129O的圖案互補。在一些實施例中,可以使用圖10A所示的超表面結構層129取代圖1A所示的顯示裝置10的超表面結構層120,且使用圖10B所示的超表面結構層139取代圖1A所示的顯示裝置10的超表面結構層130,以提供能夠同時對多種波長或多種入射角度的電磁波實現波束轉向且具有良好顯示品質的顯示裝置。FIG. 10B is a schematic partial plan view of a
綜上所述,本發明的顯示裝置藉由圖案互補的超表面結構來控制電磁波的相位延遲,可有助於延伸電磁波的可傳輸距離而提高5G毫米波的覆蓋率,同時還能夠提供均勻的可見光穿透率及防止疊紋效應,從而保持良好的顯示品質。In summary, the display device of the present invention controls the phase delay of electromagnetic waves through the metasurface structure with complementary patterns, which can help to extend the transmission distance of electromagnetic waves and improve the coverage of 5G millimeter waves, and can also provide uniform Visible light transmittance and prevent moire effect, so as to maintain good display quality.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.
10、20、30、40、50、60、70、80:顯示裝置
110:元件陣列基板
120、123、128、129、130、133、138、139:超表面結構層
129K、129L、129M、129N、129O:超表面結構組集合
139K、139L、139M、139N、139O:超表面結構組集合
B1、B2、B3、C1、C2、C3:超表面結構
BM:遮光結構
CF:彩色濾光結構
CG:濾光基板
CM:共用電極層
DL:驅動電路層
I1、I2:絕緣層
LC:顯示元件層
LD:發光元件層
MS1、MS2:超表面結構組
O1、O2、O3:開口
P1、P2:偏光層
US:蓋板
W1、W2:間距
W3、W4:長度
10, 20, 30, 40, 50, 60, 70, 80: display device
110:
圖1A是依照本發明一實施例的顯示裝置10的局部剖面示意圖。
圖1B是圖1A的顯示裝置10的超表面結構層120的局部平面示意圖。
圖1C是圖1A的顯示裝置10的超表面結構層130的局部平面示意圖。
圖2是依照本發明一實施例的顯示裝置20的局部剖面示意圖。
圖3A是依照本發明一實施例的顯示裝置30的局部剖面示意圖。
圖3B是圖3A的顯示裝置30的超表面結構層123的局部平面示意圖。
圖3C是圖3A的顯示裝置30的超表面結構層133的局部平面示意圖。
圖4是依照本發明一實施例的顯示裝置40的局部剖面示意圖。
圖5是依照本發明一實施例的顯示裝置50的局部剖面示意圖。
圖6是依照本發明一實施例的顯示裝置60的局部剖面示意圖。
圖7是依照本發明一實施例的顯示裝置70的局部剖面示意圖。
圖8是依照本發明一實施例的顯示裝置80的局部剖面示意圖。
圖9是可用於本發明實施例的超表面結構的圖樣示意圖。
圖10A是依照本發明一實施例的超表面結構層129的局部平面示意圖。
圖10B是依照本發明一實施例的超表面結構層139的局部平面示意圖。
FIG. 1A is a schematic partial cross-sectional view of a
10:顯示裝置
110:元件陣列基板
120、130:超表面結構層
CG:濾光基板
DL:驅動電路層
I1、I2:絕緣層
W1、W2:間距
W3、W4:長度
10: Display device
110:
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