TWI779204B - 基板處理裝置 - Google Patents
基板處理裝置 Download PDFInfo
- Publication number
- TWI779204B TWI779204B TW108121606A TW108121606A TWI779204B TW I779204 B TWI779204 B TW I779204B TW 108121606 A TW108121606 A TW 108121606A TW 108121606 A TW108121606 A TW 108121606A TW I779204 B TWI779204 B TW I779204B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- outer peripheral
- barrier plate
- aforementioned
- processing apparatus
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 336
- 238000012545 processing Methods 0.000 title claims abstract description 161
- 230000007246 mechanism Effects 0.000 claims abstract description 64
- 230000002093 peripheral effect Effects 0.000 claims description 179
- 230000004888 barrier function Effects 0.000 claims description 137
- 239000011261 inert gas Substances 0.000 claims description 29
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000007788 liquid Substances 0.000 description 56
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 25
- 239000003570 air Substances 0.000 description 21
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- 239000007789 gas Substances 0.000 description 14
- 238000004381 surface treatment Methods 0.000 description 14
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
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- 230000005660 hydrophilic surface Effects 0.000 description 2
- 239000008155 medical solution Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Polarising Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-126671 | 2018-07-03 | ||
JP2018126671A JP7149118B2 (ja) | 2018-07-03 | 2018-07-03 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202006875A TW202006875A (zh) | 2020-02-01 |
TWI779204B true TWI779204B (zh) | 2022-10-01 |
Family
ID=69059871
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111133017A TWI817689B (zh) | 2018-07-03 | 2019-06-21 | 基板處理裝置 |
TW108121606A TWI779204B (zh) | 2018-07-03 | 2019-06-21 | 基板處理裝置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111133017A TWI817689B (zh) | 2018-07-03 | 2019-06-21 | 基板處理裝置 |
Country Status (3)
Country | Link |
---|---|
JP (2) | JP7149118B2 (ja) |
TW (2) | TWI817689B (ja) |
WO (1) | WO2020008784A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI799172B (zh) * | 2021-03-19 | 2023-04-11 | 日商斯庫林集團股份有限公司 | 基板處理裝置、及基板處理方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201539625A (zh) * | 2014-03-19 | 2015-10-16 | Screen Holdings Co Ltd | 基板處理裝置及基板處理方法 |
TW201738004A (zh) * | 2016-03-25 | 2017-11-01 | Screen Holdings Co Ltd | 基板處理方法及基板處理裝置 |
TW201741032A (zh) * | 2016-05-18 | 2017-12-01 | 斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
TW201802882A (zh) * | 2016-03-31 | 2018-01-16 | 斯庫林集團股份有限公司 | 基板處理方法及基板處理裝置 |
TW201803650A (zh) * | 2016-05-25 | 2018-02-01 | 斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002184660A (ja) * | 2000-12-13 | 2002-06-28 | Dainippon Screen Mfg Co Ltd | ノズルおよびそれを用いた基板処理装置 |
JP4570008B2 (ja) | 2002-04-16 | 2010-10-27 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP6033595B2 (ja) | 2012-07-18 | 2016-11-30 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理装置における距離測定方法 |
JP6338275B2 (ja) * | 2014-06-27 | 2018-06-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6934732B2 (ja) | 2016-03-31 | 2021-09-15 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
JP6881922B2 (ja) | 2016-09-12 | 2021-06-02 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
-
2018
- 2018-07-03 JP JP2018126671A patent/JP7149118B2/ja active Active
-
2019
- 2019-06-04 WO PCT/JP2019/022219 patent/WO2020008784A1/ja active Application Filing
- 2019-06-21 TW TW111133017A patent/TWI817689B/zh active
- 2019-06-21 TW TW108121606A patent/TWI779204B/zh active
-
2022
- 2022-09-22 JP JP2022150893A patent/JP7378556B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201539625A (zh) * | 2014-03-19 | 2015-10-16 | Screen Holdings Co Ltd | 基板處理裝置及基板處理方法 |
TW201738004A (zh) * | 2016-03-25 | 2017-11-01 | Screen Holdings Co Ltd | 基板處理方法及基板處理裝置 |
TW201802882A (zh) * | 2016-03-31 | 2018-01-16 | 斯庫林集團股份有限公司 | 基板處理方法及基板處理裝置 |
TW201741032A (zh) * | 2016-05-18 | 2017-12-01 | 斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
TW201803650A (zh) * | 2016-05-25 | 2018-02-01 | 斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202006875A (zh) | 2020-02-01 |
JP7149118B2 (ja) | 2022-10-06 |
JP2020009800A (ja) | 2020-01-16 |
WO2020008784A1 (ja) | 2020-01-09 |
JP2022171969A (ja) | 2022-11-11 |
JP7378556B2 (ja) | 2023-11-13 |
TWI817689B (zh) | 2023-10-01 |
TW202312344A (zh) | 2023-03-16 |
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