TWI779204B - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus (1) includes a substrate holding part (2), a substrate rotating mechanism (3), and a shield plate (51). The shield plate (51) is disposed at a processing position close to an upper surface (91) of a substrate (9) when processing the substrate (9). The substrate holding part (2) includes a holding base (21), a plurality of supporting parts (22), and a outer ring part (23). The holding base (21) is disposed under the substrate (9). The plurality of supporting parts (22) respectively have a plurality of contact parts (224) which come into contact with an outer circumferential edge of the substrate (9) when holding the substrate (9), and are arranged in a circumferential direction on the holding base (21). The outer ring part (23) is an annular plate member which surrounds the substrate (9) in a state where its inner circumferential edge is disposed close to the outer circumferential edge of the substrate (9), and covers at least one portion of each supporting part (22). At least one portion of the outer ring part (23) overlaps with the shield plate (51) in a plan view. It is therefore possible to suppress disturbance of air flow in the vicinity of the outer circumferential edge of the substrate (9).

Description

Substrate processing equipment

The invention relates to a substrate processing device.

Conventionally, in the manufacture of semiconductor devices, substrate processing apparatuses for performing various processes on semiconductor substrates (hereinafter simply referred to as "substrates") are used. For example, in Japanese Unexamined Patent Application Publication No. 2016-72343 (Document 1), a substrate processing apparatus is disclosed in which a top plate (barrier plate) facing the upper surface of the substrate is disposed close to the upper surface. position, and the upper surface is treated with liquid medicine, washed and dried. In addition, the top plate is provided with a substantially cylindrical member extending downward from the outer peripheral edge of the disc-shaped main body, so that when the top plate moves toward a position closer to the substrate after chemical liquid treatment, it can move toward the substrate. The ambient atmosphere of the liquid medicine being pushed out is directed downward.

Also, Japanese Patent Application Laid-Open No. 9-314022 discloses a substrate rotation holding device that rotates a substrate within a cup. In this substrate rotation holding device, an annular portion is provided on the outer peripheral side of the substrate holding portion for holding the substrate in a horizontal posture, and the annular portion has an annular shape extending horizontally toward the inner wall surface of the cover portion. flat surface. When the substrate and the ring part rotate, the speed of the airflow in the gap between the inner wall of the cover part and the outer peripheral end of the ring part increases, thereby suppressing the mist from rolling up in the cover part. In the substrate processing apparatus of JP-A-2012-94836, a ring-shaped member is provided to surround a substrate held by a spin chuck. The annular member has: an upper annular hydrophilic surface surrounding the upper peripheral edge of the substrate; and a lower annular hydrophilic surface surrounding the lower peripheral edge of the substrate; therefore, even if the upper surface and the lower surface of the substrate are In the case of hydrophobicity, it is also possible to cover the entire upper surface of the substrate with the treatment liquid. domain and the entire subsurface domain.

However, as in Document 1, in the case of using a barrier plate opposed to the upper surface of the substrate, it is possible to form a narrow processing space between the upper surface and the barrier plate and improve the uniformity of processing on the upper surface. On the other hand, in the case where the outer peripheral edge of the substrate is supported by a plurality of supports arranged in the circumferential direction in the substrate holding part, turbulence of air flow due to the plurality of supports occurs during rotation of the substrate holding part. In this case, ambient air enters between the upper surface of the substrate and the barrier plate, reducing process uniformity. In addition, when the barrier plate is rotated similarly to the substrate holding portion, an air flow flying outward is generated in the upper surface of the barrier plate. In this case, the air flow collides with the downward air flow in the periphery of the barrier plate, causing turbulence of the air flow in the vicinity of the outer peripheral edge of the substrate. Thereby, there may be a case where an adverse effect is exerted on the substrate.

The present invention focuses on a substrate processing apparatus, and aims at suppressing the turbulence of the air flow in the vicinity of the outer peripheral edge of the substrate.

A preferred substrate processing apparatus of the present invention includes: a substrate holding unit that holds the substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holding unit about a central axis facing the vertical direction; and a barrier plate that is connected to the above-mentioned The upper surface of the substrate is in the shape of a plate, and when the aforementioned substrate is processed, it is arranged at a processing position close to the aforementioned upper surface, thereby forming a processing space between the aforementioned barrier plate and the aforementioned upper surface; in the aforementioned processing position, the aforementioned The barrier plate is opposed to the entire surface of the aforementioned upper surface of the aforementioned substrate; the aforementioned substrate holding portion is provided with: a holding base arranged below the aforementioned substrate; a plurality of supporting portions arranged around the aforementioned holding base. direction, and respectively have a plurality of abutment parts, the plurality of abutment parts are abutted to the outer peripheral edge of the aforementioned substrate when holding the aforementioned substrate; The ring-shaped plate member surrounding the periphery of the aforementioned substrate in the state covers the Covering at least a part of each of the support parts and at least a part of the outer circumferential ring part overlaps with the barrier plate arranged at the treatment position.

In the substrate processing apparatus, the turbulence of the air flow in the vicinity of the outer peripheral edge of the substrate can be suppressed.

In a preferred aspect of the present invention, the outer peripheral edge of the outer peripheral ring portion is positioned radially outward of each of the support portions.

In another preferred aspect of the present invention, each of the support portions has a rotation shaft portion for rotating the abutting portion, and the rotation shaft portion is located radially outside of the substrate.

In another preferred aspect of the present invention, the outer peripheral ring portion is supported by a plurality of the support portions.

In another preferred aspect of the present invention, the substrate processing apparatus further includes an inert gas supply unit configured to supply an inert gas to the processing space.

In another preferred aspect of the present invention, the substrate processing apparatus further includes: a barrier plate rotation mechanism that rotates the barrier plate around a central axis facing the vertical direction; and a peripheral wall that rotates from the barrier plate The outer peripheral portion protrudes upward.

In another preferred aspect of the present invention, the barrier plate and the substrate are disc-shaped, and the diameter of the barrier plate is equal to or larger than the diameter of the substrate.

Another preferred substrate processing apparatus of the present invention is provided with: a substrate holding unit that holds the substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holding unit around a central axis facing the vertical direction; and a barrier plate that A plate-like shape facing the upper surface of the aforementioned substrate, and disposed at a processing position close to the aforementioned upper surface when processing the aforementioned substrate, thereby forming a processing space between the aforementioned barrier plate and the aforementioned upper surface; the barrier plate rotating mechanism, The baffle plate is rotated about a central axis facing the up-down direction; and the peripheral wall protrudes upward from the outer peripheral edge of the baffle plate. In the substrate processing apparatus, the outer peripheral edge of the substrate can be suppressed. Disturbance of the mesial airflow.

In a preferred aspect of the present invention, the substrate processing apparatus further includes: an airflow forming part that forms a downflow above the barrier plate.

In another preferred aspect of the present invention, the substrate processing apparatus further includes: a processing liquid supply part that supplies the processing liquid to the aforementioned upper surface of the aforementioned substrate; Scattered treatment fluid.

In this case, it is preferable that the upper end of the cover part is close to the peripheral wall part when the barrier plate is arranged at the processing position.

When the barrier plate is arranged at the processing position, the upper end of the cover portion may be opposed to the peripheral wall portion in the radial direction.

In this case, it is preferable that the substrate processing apparatus further includes: an elevating mechanism for relatively moving the barrier plate in the vertical direction relative to the substrate holding portion; When carrying out another kind of processing to the aforementioned substrate, the widths of the aforementioned processing spaces in the aforementioned up and down directions are different; The direction is opposite to the aforementioned peripheral wall portion.

In another preferred aspect of the present invention, the barrier plate and the substrate are disc-shaped, and the diameter of the barrier plate is equal to or larger than the diameter of the substrate.

The above object and other objects, features, aspects, and advantages of the present invention will be clarified through the following detailed description of the present invention with reference to the accompanying drawings.

1: Substrate processing device

2: Substrate holding part

3: Substrate rotation mechanism

6: chamber

7: Gas and liquid supply unit

9: Substrate

10: Control Department

21: Hold the base

22: Support part

23: Outer peripheral ring

25: support pin

29: ring lifting mechanism

31, 531: Shaft

41: Hood unit

42: Outer cover

43: inner cover part

44: Hood Lifting Mechanism

51: barrier board

52: Peripheral wall

53: Barrier plate rotation mechanism

54: Baffle plate lifting mechanism

61: Airflow forming part

71: Upper nozzle

72: Lower nozzle

73: Upper surface treatment liquid supply part

74: Bottom surface treatment liquid supply part

75: Inert gas supply unit

81: Handling Space (Space)

91: upper surface (of the substrate)

92: lower surface (main surface)

211: (base) upper surface

221: support rod

222, 222a: rotating shaft part

223: support plate

224: contact part

232: Gap

233: ring support member

241: ring department

242: Communication Agency

421, 431: the upper part of the cover

511: (of the barrier plate) upper surface

512: (of the barrier plate) lower surface

513: (of the barrier plate) outer peripheral edge

521: inner peripheral surface

522: Outer peripheral surface

611: fan

612: filter

711: Treatment liquid ejection port

712: Gas outlet

731: Liquid medicine supply source

732: IPA supply source

733: Pure water supply source

751: Inert gas supply source

J1: central axis

W: width

FIG. 1 is a diagram showing the configuration of a substrate processing apparatus.

Fig. 2 is a diagram showing the configuration of a gas-liquid supply unit.

Fig. 3 is a top view showing the substrate holding part.

Fig. 4 is a perspective view showing a supporting part.

FIG. 5 is a diagram showing the flow of processing a substrate by a substrate processing device.

FIG. 6 is a diagram showing a substrate processing apparatus.

Fig. 7 is a diagram showing another example of a substrate holding portion.

FIG. 1 is a diagram showing the configuration of a substrate processing apparatus 1 according to one embodiment of the present invention. The substrate processing device 1 is a blade-type device for processing disc-shaped substrates 9 one by one, and is also called a substrate cleaning device. The substrate processing apparatus 1 includes a substrate holding unit 2 , a substrate rotating mechanism 3 , a cover unit 41 , a cover lifting mechanism 44 , a barrier plate 51 , a barrier plate rotating mechanism 53 , and a barrier plate lifting mechanism 54 . These components in the substrate processing apparatus 1 are accommodated in a box-shaped chamber (chamber) 6 . The chamber 6 forms a substantially airtight inner space. The chamber 6 is also a part of the substrate processing apparatus 1 .

The substrate holding unit 2 includes a holding base 21 , a plurality of supporting parts 22 and an outer peripheral ring part 23 . The holding base 21 is disc-shaped centered on the central axis J1 facing the up-down direction. A plurality of supporting parts 22 are disposed on the upper surface 211 of the holding base 21 . The plurality of support portions 22 are arranged at equal intervals in the circumferential direction on the circumference centered on the central axis J1 (see FIG. 3 described later). When the substrate holding portion 2 holds the substrate 9 , the abutting portions 224 of the plurality of supporting portions 22 abut against the outer peripheral edge of the substrate 9 . Thereby, the substrate 9 is held above the holding base 21 in a horizontal state. The center system of the substrate 9 held by the substrate holding unit 2 is located on the central axis J1. The upper surface 211 of the holding base 21 located below the substrate 9 and the main surface 92 facing the bottom of the substrate 9 (hereinafter referred to as "the lower surface 92") are parallel to each other, and the upper surface 211 and the main surface 92 are spaced apart. facing directly across the gap. The number of supporting parts 22 can be determined arbitrarily, and is typically three or more. A detailed description of the plurality of support portions 22 and the outer peripheral ring portion 23 will be described later.

The upper end of the shaft part 31 centering on the central axis J1 is fixed to the center of the lower surface of the holding base 21 . The substrate rotating mechanism 3 with the motor is the lower end portion of the rotating shaft portion 31, whereby The substrate holding unit 2 rotates together with the substrate 9 around the central axis J1. A hollow portion extending in the vertical direction is provided on the central axis J1 of the holding base 21 and the shaft portion 31 , and the lower nozzle 72 is arranged in the hollow portion. The lower nozzle 72 extends in the vertical direction, and the upper end surface of the lower nozzle 72 is arranged near the upper surface 211 of the holding base 21 . The lower nozzle 72 is located on the lower surface 92 side of the substrate 9 . The lower nozzle 72 is located at the center of the holding base 21 and directly faces the center of the lower surface 92 of the substrate 9 .

The cover unit 41 includes an outer cover 42 and an inner cover 43 . Both the outer cover portion 42 and the inner cover portion 43 have a substantially cylindrical shape centering on the central axis J1. The inner cover part 43 surrounds the periphery of the holding base 21 , and the outer cover part 42 surrounds the periphery of the inner cover part 43 . The outer cover part 42 and the inner cover part 43 respectively have cover part upper parts 421 and 431 whose diameters decrease as they go upward. The upper end of the outer cover portion 42 is the upper end of the upper cover portion 421 , and the upper end of the inner cover portion 43 is the upper end of the upper cover portion 431 . Both the upper end of the outer cover portion 42 and the upper end of the inner cover portion 43 are annular.

The cover lifting mechanism 44 includes, for example, a motor and a ball screw, and moves each of the outer cover 42 and the inner cover 43 in the vertical direction. For example, the outer cover portion 42 is selectively arranged at a predetermined upper position or lower position, and the inner cover portion 43 is also selectively arranged at a predetermined upper position or lower position. As shown in FIG. 1 , in a state where the outer cover portion 42 is disposed at the upper position and the inner cover portion 43 is disposed at the lower position, the upper cover portion 421 of the outer cover portion 42 is aligned in the radial direction centered on the central axis J1. It faces the substrate 9 on the substrate holding part 2 . In a state where the outer cover portion 42 is arranged at the upper position and the inner cover portion 43 is also arranged at the upper position, the upper cover portion 431 of the inner cover portion 43 faces the substrate 9 in the radial direction. In the processing of the substrate 9 described later, various processing liquids scattered from the outer peripheral edge of the substrate 9 are caught by the inner peripheral surface of the outer cover portion 42 or the inner peripheral surface of the inner cover portion 43 . The treatment liquid is recovered through discharge pipes (not shown) provided at the bottom of each of the outer cover portion 42 and the inner cover portion 43 . In addition, a discharge pipe is connected to the gas-liquid discharge part and can discharge gas and liquid to the outside.

When the substrate 9 is carried in and out from the substrate processing apparatus 1, the inner cover part 43 is arranged at the lower position, and the outer cover part 42 is also arranged at the lower position. Thereby, the upper end of the inner cover part 43 and the upper end of the outer cover part 42 are disposed below the substrate 9 on the substrate holding part 2 to prevent interference with an external transfer mechanism. The outer cover portion 42 and the inner cover portion 43 may be arranged at positions other than the upper position and the lower position.

The barrier plate 51 is disc-shaped with the central axis J1 as the center. The barrier plate 51 is disposed above the substrate holding portion 2 . The lower surface 512 of the barrier plate 51 is opposed to the main surface 91 (hereinafter referred to as “upper surface 91 ”) facing above the substrate 9 on the substrate holding portion 2 in the vertical direction. The lower surface 512 of the barrier plate 51 is parallel to the upper surface 91 of the substrate 9 . The diameter of the barrier plate 51 is equal to or larger than the diameter of the substrate 9 , and the entire upper surface 91 of the substrate 9 is covered with the barrier plate 51 . In the example of FIG. 1 , the diameter of the barrier plate 51 is the same as or slightly larger than the diameter of the holding base 21 . Therefore, the barrier plate 51 covers the entirety of the holding base 21 . According to the design of the substrate processing apparatus 1 , the diameter of the barrier plate 51 may also be smaller than the diameter of the holding base 21 .

In the barrier plate 51 , the upper surface 511 facing the side opposite to the substrate 9 expands slightly perpendicular to the central axis J1 . The upper surface 511 of the barrier plate 51 is also parallel to the upper surface 91 of the substrate 9 . A peripheral wall portion 52 protruding upward is provided on an outer peripheral portion 513 of the upper surface 511 of the barrier plate 51 . The peripheral wall portion 52 protrudes from the upper surface 511 in a cylindrical shape. The peripheral wall portion 52 includes an inner peripheral surface 521 and an outer peripheral surface 522 . In this embodiment, both the inner peripheral surface 521 and the outer peripheral surface 522 are cylindrical surfaces centered on the central axis J1. As shown in FIG. 1 , in the section of the barrier plate 51 on the plane including the central axis J1 , the inner peripheral surface 521 of the peripheral wall portion 52 is approximately perpendicular to the upper surface 511 of the barrier plate 51 . In addition, the outer peripheral surface 522 of the peripheral wall portion 52 is also slightly perpendicular to the barrier plate 51 . In the example of FIG. 1 , the outer peripheral surface 522 of the peripheral wall portion 52 and the outer peripheral end surface of the barrier plate 51 are included in the same cylindrical surface centered on the central axis J1.

The lower end of the shaft part 531 centering on the central axis J1 is fixed to the center of the upper surface 511 of the barrier plate 51 . The baffle plate rotating mechanism 53 with the motor is the upper end portion of the rotating shaft portion 531, by This baffle plate 51 rotates around the center axis J1. The rotation of the barrier plate 51 by the barrier plate rotation mechanism 53 is performed independently of the rotation of the substrate 9 by the substrate rotation mechanism 3 . A hollow portion extending in the vertical direction is provided on the central axis J1 of the barrier plate 51 and the shaft portion 531 , and the upper nozzle 71 is disposed in the hollow portion. The upper nozzle 71 extends in the vertical direction, and the lower end surface of the upper nozzle 71 is arranged near the lower surface 512 of the barrier plate 51 . The upper nozzle 71 is located on the side of the upper surface 91 of the substrate 9 . The upper nozzle 71 is located at the center of the lower surface 512 of the barrier plate 51 and directly faces the center of the upper surface 91 of the substrate 9 .

The barrier plate elevating mechanism 54 includes, for example, a motor and a ball screw, and moves the barrier plate 51 in the vertical direction together with the barrier plate rotating mechanism 53 . During the processing of the substrate 9, the barrier plate 51 is arranged at a processing position close to the upper surface 91 of the substrate 9 (refer to FIG. 1 and FIG. 6 described later), between the lower surface 51 of the barrier plate 51 and the upper surface 91 of the substrate 9 A space 81 (hereinafter referred to as "processing space 81") having a small width in the vertical direction is formed therebetween. As shown by the two-dot chain line in FIG. 1 , when the substrate 9 is carried in and out of the substrate processing apparatus 1, the barrier plate 51 is arranged at a distance away from the upper surface 91 of the substrate 9 to prevent transportation with the outside. Institutional interference.

The airflow forming part 61 is attached to the cover part of the chamber 6 . The airflow forming part 61 is disposed above the baffle plate 51 and the cover unit 41 . The airflow forming part 61 is, for example, a fan filter unit (FFU; fan filter unit), and has a fan 611 and a filter 612 . The fan 611 transports the air outside the chamber 6 into the chamber 6 through the filter 612 . The filter 612 is, for example, a HEPA (High Efficiency Particulate Air) filter for removing particles in the air. The flow of gas (here, clean air) is formed in the chamber 6 from the top to the bottom by the airflow forming part 61 , that is, a downward airflow is formed above the barrier plate 51 . In the airflow forming part 61, a downdraft may be formed by nitrogen gas etc. as well. An exhaust pipe (not shown) is provided at the lower part of the chamber 6 , and the gas in the chamber 6 is exhausted to the outside of the chamber 6 through the exhaust pipe. In the processing of the substrate 9 to be described later, a downdraft of a constant flow rate is constantly formed.

FIG. 2 is a diagram showing the configuration of the gas-liquid supply unit 7 included in the substrate processing apparatus 1 . Also shown in FIG. 2 is a control unit 10 in charge of overall control in the substrate processing apparatus 1 . The control unit 10 is realized by a computer executing a predetermined program. The control unit 10 may also be constituted by a dedicated electrical circuit, or may also partially utilize a dedicated electrical circuit.

The gas-liquid supply unit 7 includes a top surface treatment liquid supply unit 73 , a bottom surface treatment liquid supply unit 74 , and an inert gas supply unit 75 . The upper surface treatment liquid supply unit 73 includes the above-described upper nozzle 71 , a chemical solution supply source 731 , an IPA (isopropyl alcohol; isopropyl alcohol) supply source 732 , and a pure water supply source 733 . A processing liquid discharge port 711 and a gas discharge port 712 are formed on the lower end surface of the upper nozzle 71 . In the example of FIG. 2 , a processing liquid discharge port 711 is provided at the center of the lower end surface of the upper nozzle 71 , and a substantially annular gas discharge port 712 is provided around the processing liquid discharge port 711 .

In the upper nozzle 71 , a chemical solution supply source 731 , an IPA supply source 732 , and a pure water supply source 733 are connected to the treatment solution flow path leading to the treatment solution discharge port 711 via valves. The chemical solution is supplied from the chemical solution supply source 731 to the processing liquid channel of the upper nozzle 71 , whereby the chemical solution is ejected from the processing liquid discharge port 711 toward the center of the upper surface 91 of the substrate 9 . The chemical solution is, for example, an etching solution such as hydrofluoric acid or a tetramethylammonium hydroxide (Tetra Methyl Ammonium Hydroxide) aqueous solution. Similarly, by supplying IPA from the IPA supply source 732 to the treatment liquid channel of the upper nozzle 71 , IPA is ejected from the treatment liquid discharge port 711 toward the center of the upper surface 91 . Further, pure water is supplied from the pure water supply source 733 to the treatment liquid channel of the upper nozzle 71 , whereby the pure water is sprayed from the treatment liquid discharge port 711 toward the center of the upper surface 91 . In the upper surface treatment liquid supply unit 73 , other types of treatment liquids may be supplied to the upper surface 91 .

The inert gas supply unit 75 includes the above-described upper nozzle 71 and the inert gas jet supply source 751 . In the upper nozzle 71 , an inert gas supply source 751 is connected via a valve to the gas flow path leading to the gas discharge port 712 . The inert gas is supplied from the inert gas supply source 751 to the gas channel of the upper nozzle 71 , whereby the inert gas is ejected from the gas ejection port 712 into the processing space 81 between the barrier plate 51 and the substrate 9 . Reactivity of the inert gas system to the substrate 9 itself and the thin film formed on the substrate 9 Poor gas, such as nitrogen, argon, helium, etc. In this embodiment, nitrogen gas is supplied to the processing space 81 as an inert gas. The upper nozzle 71 is shared by the upper surface treatment liquid supply unit 73 and the inert gas supply unit 75 .

The lower surface treatment liquid supply unit 74 includes the lower nozzle 72 and the pure water supply source 733 that have been described. A pure water supply source 733 is connected to the lower nozzle 72 via a valve. Pure water is supplied from a pure water supply source 733 to the lower nozzle 72 , whereby the pure water is sprayed from the lower nozzle 72 toward the center of the lower surface 92 of the substrate 9 . The pure water supply source 733 is shared by the upper surface treatment liquid supply unit 73 and the lower surface treatment liquid supply unit 74 . In the lower surface treatment liquid supply unit 74 , other types of treatment liquids may be supplied to the lower surface 92 .

FIG. 3 shows a top view of the substrate holding part 2 , and FIG. 4 shows a perspective view of a supporting part 22 . As described above, the plurality of support portions 22 are arranged at equal intervals in the circumferential direction on the holding base 21 . As shown in FIGS. 3 and 4 , each support portion 22 includes a support rod 221 , a rotation shaft portion 222 , a support plate portion 223 , and a contact portion 224 . A plurality of bottomed holes are provided at equal intervals in the circumferential direction of the outer peripheral portion of the upper surface 211 of the holding base 21 . The cross-sectional shape of the hole perpendicular to the vertical direction is circular. The supporting rod 221 extending in the vertical direction is disposed in the center of the hole, and the lower end of the supporting rod 221 is fixed to the bottom of the hole. The drawing of the holding base 21 is omitted in FIG. 4 . The rotation shaft portion 222 is a cylindrical hollow member fitted into the support rod 221 and disposed in the hole portion of the holding base 21 . The inner diameter of the rotating shaft part 222 is slightly larger than the diameter of the support rod 221, and the outer diameter of the rotating shaft part 222 is slightly smaller than the diameter of the hole part. The rotation shaft portion 222 is rotatably supported by the support rod 221 and the hole with the support rod 221 as a center. The rotation shaft portion 222 may be rotatably supported using a bearing or the like.

The supporting plate portion 223 is a plate-shaped member extending horizontally from the rotating shaft portion 222 along the upper surface 211 of the holding base 21 . The lower surface of the support plate portion 223 is close to the upper surface 211 of the holding base 21 . Most of the support plate portion 223 is disposed between the outer peripheral ring portion 23 described later and the upper surface 211 of the holding base 21 . In the example of FIG. 3 , the support plate portion 223 is wedge-shaped, and the width in the horizontal direction becomes narrower as it is farther away from the rotation shaft portion 222 . The supporting plate portion 223 is roughly along the circumferential direction, and the farther away from the rotating shaft portion 222 is toward the inner side of the radial direction. The abutting portion 224 is a protruding portion disposed on the upper surface of the supporting plate portion 223 . The abutting portion 224 is disposed at a position away from the rotating shaft portion 222 .

As shown in FIG. 1 , the substrate holding unit 2 further includes a ring portion 241 and a transmission mechanism 242 . The ring part 241 centering on the central axis J1 is arranged below the holding base 21 and supported so as to be movable in the vertical direction by a guide part not shown in the figure. The transmission mechanism 242 is a link mechanism for connecting the ring portion 241 with the rotating shaft portions 222 of the plurality of support portions 22 , and is disposed inside and below the holding base 21 . The transmission mechanism 242 rotates the rotation shaft part 222 in conjunction with the vertical movement of the ring part 241 . When the substrate 9 rotates, the ring portion 241 and the transmission mechanism 242 rotate around the central axis J1 together with the holding base 21 .

A ring lifting mechanism 29 is provided below the conveying mechanism 242 . The ring lifting mechanism 29 includes, for example, a motor and a ball screw, and moves a moving body (nut) in the ball screw in the vertical direction by the rotation of the motor. The ring portion 241 is inserted into the inner ring of the bearing, and the moving body of the ring lifting mechanism 29 is fixed to the outer ring of the bearing. Thereby, in the state where the ring part 241 rotates about the central axis J1 as a center, the ring part 241 can move to an up-down direction by the ring lifting mechanism 29. As shown in FIG. The motor of the ring lifting mechanism 29 is fixed to the housing for accommodating the substrate rotating mechanism 3 .

For example, the ring lifting mechanism 29 disposes the ring portion 241 at the first position in the up-down direction, whereby as shown by the two-dot chain line in FIG. to the outer periphery of the substrate 9. That is, the plurality of abutting portions 224 are arranged at holding positions and hold the substrate 9 in the substrate holding portion 2 . The ring lifting mechanism 29 moves the ring portion 241 toward the second position in the up-down direction, whereby the rotating shaft portion 222 rotates in such a manner that each abutting portion 224 is separated from the outer peripheral edge of the base plate 9, and the plurality of abutting portions 224 It is arranged in the release position shown by the solid line in Fig. 3 . Thereby, the holding of the substrate 9 by the substrate holding portion 2 is released. In the example of FIG. 3 , even in a state where the plurality of abutting portions 224 are separated from the outer peripheral edge of the substrate 9 and the holding of the substrate 9 is released, the substrate is supported from below by the support plate portion 223 of the plurality of support portions 22. 9. The structure of the supporting part 22 and the above-mentioned features for rotating the rotating shaft part 222 The organization is just an example, and it can be changed appropriately.

The substrate holding unit 2 further includes a plurality of support pins 25 . A plurality of other holes are provided at equal intervals in the circumferential direction of the upper surface 211 of the holding base 21 , and the plurality of support pins 25 are disposed in the plurality of holes, respectively. The plurality of support pins 25 are arranged at equal intervals in the circumferential direction. In the example of FIG. 3 , each support pin 25 is disposed between two support portions 22 adjacent to each other in the circumferential direction. The positions of the plurality of support pins 25 in the radial direction are slightly closer to the side of the central axis J1 than the plurality of contact portions 224 arranged at the holding positions. That is, the plurality of support pins 25 are located on the side slightly closer to the central axis J1 than the outer peripheral edge of the base plate 9 . For example, the lower ends of the plurality of support pins 25 are fixed to another ring portion (not shown) centered on the central axis J1. The other ring portion is a moving body connected to another ring elevating mechanism (not shown) via a bearing in the same manner as the above-mentioned ring portion 241 and the ring elevating mechanism 29 . Thereby, in the state which this other ring part can rotate about the center axis|shaft J1 as a center, another ring part can move to an up-down direction by this other ring lifting mechanism. The motor of the other ring lifting mechanism is fixed to the casing for accommodating the substrate rotating mechanism 3 .

For example, the other ring lifting mechanism arranges the other ring portion at the first position in the vertical direction, whereby the upper ends of the plurality of support pins 25 are arranged at the same standby position as the upper surface 211 of the holding base 21 Or the standby position below the upper surface 211 . The other ring elevating mechanism arranges the other ring portion at the second position in the up-down direction, whereby the upper ends of the plurality of support pins 25 are arranged at support positions above the upper ends of the plurality of abutting portions 224 .

As shown in FIG. 3 , the outer peripheral ring portion 23 is an annular plate member and is arranged above the outer peripheral edge portion of the holding base 21 . Desirable outer peripheral ring part 23 is a substantially annular shape centering on central axis J1 and is continuous over the entire circumference. The outer peripheral ring portion 23 is connected to the upper end portion of the support rod 221 in the plurality of support portions 22 and is fixed relative to the holding base 21 . That is, the outer peripheral ring portion 23 is supported by the plurality of support portions 22 . In FIG. 4, the outer peripheral ring portion 23 is shown by a chain line of two dots. A notch 232 is formed on the inner peripheral edge of the outer peripheral ring portion 23, and the notch 232 is used to avoid the abutting portion 224 with each support portion 22 (already disposed in the release position). position of the abutment 224) contact. The inner diameter of the outer peripheral ring portion 23 is slightly larger than the diameter of the base plate 9 . The inner peripheral edge of the outer peripheral ring portion 23 is close to the outer peripheral edge of the substrate 9 held by the substrate holding portion 2 on the outside. The radial distance between the inner peripheral edge of the outer peripheral ring portion 23 (excluding the notch 232 ) and the outer peripheral edge of the substrate 9 is, for example, 0.5 mm to 2.0 mm.

The outer peripheral edge of the outer peripheral ring portion 23 is located radially outward of each supporting portion 22 . Most of each support portion 22 (in detail, substantially the entire portion of the support portion 22 located radially outward from the outer peripheral edge of the substrate 9 ) is covered by the outer peripheral ring portion 23 . In other words, substantially the entirety of each support portion 22 is located below the outer peripheral ring portion 23 and the base plate 9 . Typically, the outer diameter of the outer peripheral ring portion 23 is the same as or slightly smaller than the diameter of the holding base 21 . Therefore, the entirety of the outer peripheral ring portion 23 overlaps the holding base 21 when viewed in the vertical direction, that is, when viewed from above. Likewise, in a typical example, the outer diameter of the outer peripheral ring portion 23 is the same as or slightly smaller than the diameter of the baffle plate 51 (see FIG. 1 ). Therefore, in plan view, the barrier plate 51 overlaps the entire outer peripheral ring portion 23 , and the entire outer peripheral ring portion 23 is covered by the barrier plate 51 . The width of the outer peripheral ring portion 23 in the radial direction is constant over the entire circumference except the position of the notch portion 232 . The width of the outer peripheral ring portion 23 is, for example, 2 mm to 10 mm. The width of the outer peripheral ring portion 23 may also vary in the circumferential direction according to the design of the outer peripheral ring portion 23 .

The upper surface 231 of the outer peripheral ring portion 23 shown in FIG. 3 is substantially parallel to the lower surface 512 (see FIG. 1 ) of the barrier plate 51 . The lower surface of the outer peripheral ring portion 23 is also substantially parallel to the upper surface 211 of the holding base 21 . In this embodiment, except for the support bar 211 and the contact portion 224 , any one of the plurality of support portions 22 is located below the outer peripheral ring portion 23 . The upper end surfaces of the support rod 221 and the abutting portion 224 are substantially at the same height as the upper surface 231 of the outer peripheral ring portion 23 . In the processing of the substrate 9, in order to properly remove the processing liquid supplied to the upper surface 91 of the substrate 9, it is preferable that the upper surface 231 of the outer peripheral ring portion 23 is arranged at the same height or ratio as that of the upper surface 91 of the substrate 9. The upper surface 91 is also below. In the example of FIG. 1 , the upper surface 231 of the outer peripheral ring portion 23 and the upper surface 91 of the substrate 9 are arranged on the same axis as the central axis. On the same plane perpendicular to J1.

FIG. 5 is a diagram showing the flow of processing a substrate 9 by the substrate processing apparatus 1 . When starting to process the substrate 9, the substrate 9 to be processed is loaded into the substrate processing apparatus 1 (step S11). Specifically, first, the plurality of support pins 25 in the substrate holding portion 2 in FIG. An openable and closable loading and unloading port (not shown) is provided on the side of the chamber 6 in FIG. pin 25 on. After the transfer mechanism retracts to the outside of the chamber 6, the plurality of support pins 25 descend. At this time, the plurality of abutting portions 224 are disposed at the release positions shown by solid lines in FIG. 3 , and the substrate 9 is transferred from the plurality of support pins 25 to the plurality of support plate portions 223 . The plurality of support pins 25 moves to the standby position in the holding base 21 . Thereafter, the plurality of abutting portions 224 are arranged at holding positions abutting against the outer peripheral edge of the substrate 9 by the ring lifting mechanism 29 , and the substrate 9 is held in the substrate holding portion 2 . As described above, when loading and unloading the substrate 9, both the outer cover portion 42 and the inner cover portion 43 are arranged at the lower position, and the barrier plate 51 is arranged at the separated position.

When the substrate 9 is carried in, the barrier plate 51 is disposed at the liquid processing position shown by the solid line in FIG. 1 by the barrier plate lifting mechanism 54, between the lower surface 512 of the barrier plate 51 and the upper surface 91 of the substrate 9 A processing space 81 is formed (step S12). The barrier plate 51 disposed at the liquid processing position is close to the upper surface 91 of the substrate 9 . As mentioned above, in the case where the diameter of the barrier plate 51 is larger than the diameter of the substrate 9 and the hollow portion of the barrier plate 51 is also a part of the barrier plate 51, the barrier plate 51 is in contact with the upper surface 91 of the substrate 9 in the liquid handling position. full orientation. In a state where the barrier plate 51 is disposed at the liquid processing position, the width of the processing space 81 in the vertical direction is, for example, 7 mm.

In addition, the inert gas supply to the processing space 81 is started by the inert gas supply unit 75 . An inert gas system is supplied into the processing space 81 through the upper nozzle 71 . Thereby, after a lapse of a predetermined time, the processing space 81 becomes an inert gas-filled state filled with an inert gas (that is, an ambient atmosphere with a low oxygen concentration and low humidity). Furthermore, as shown in FIG. 1, the outer cover portion 42 is disposed at an upper position and It faces the substrate 9 in the radial direction. The upper end of the outer cover portion 42 is close to the peripheral wall portion 52 all around and faces in the radial direction. In one example, the upper end of the outer cover portion 42 is located about 3 mm below the upper end of the peripheral wall portion 52 . In addition, the inner cover portion 43 may face the substrate 9 in the radial direction.

Next, the rotation of the substrate 9 is started by the substrate rotation mechanism 3 (step S13). The substrate 9 rotates together with the substrate holder 2 in a horizontal state. Further, rotation of the barrier plate 51 is started by the barrier plate rotating mechanism 53 (step S14). The blocking plate 51 is rotated in a horizontal state. In this processing example, the number of rotations of the barrier plate 51 is substantially the same as that of the substrate 9 , and the barrier plate 51 rotates in the same direction as the substrate 9 . The number of rotations and the direction of rotation of the barrier plate 51 may be different from the number of rotations and direction of rotation of the substrate 9 depending on the type of processing on the substrate 9 and the like.

Next, the chemical solution is continuously supplied to the central portion of the upper surface 91 of the substrate 9 by the upper surface treatment liquid supply unit 73 through the upper nozzle 71 (step S15 ). In the upper surface 91 , by the centrifugal force caused by the rotation of the substrate 9 , the chemical solution spreads toward the outer peripheral edge of the substrate 9 and the chemical solution is supplied to the entirety of the upper surface 91 . The treatment of the substrate 9 with the chemical solution is carried out in the narrow space between the lower surface 512 of the barrier plate 51 and the upper surface 91 of the substrate 9 , that is, in the processing space 81 filled with inert gas. Thereby, the uniformity of chemical solution processing on the substrate 9 can be improved.

The chemical solution scattered from the outer peripheral edge of the substrate 9 or from the outer peripheral edge of the outer peripheral ring portion 23 is received by the inner peripheral surface of the outer cover portion 42 and recovered (the same applies to the supply of pure water described later). At this time, even in the case where it is assumed that the chemical solution caught in the inner peripheral surface of the outer cover portion 42 bounces back toward the substrate 9 (so-called splashing back), since the lower surface 512 of the barrier plate 51 and the outer peripheral surface The width between the upper surfaces 231 of the ring portion 23 is narrow, thus preventing the jumping liquid medicine from adhering to and contaminating the substrate 9 . While the chemical solution is being supplied to the substrate 9, the inert gas is continuously supplied to the processing space 81 (the same applies to the supply of pure water described later).

When the supply of the medical solution continues for a predetermined time, the supply of the medical solution is stopped. Next, pure water is continuously supplied to the central portion of the upper surface 91 by the upper surface treatment liquid supply unit 73 through the upper nozzle 71 . Further, pure water is continuously supplied to the central portion of the lower surface 92 of the substrate 9 by the lower surface treatment liquid supply unit 74 through the lower nozzle 72 (step S16 ). In the upper surface 91 and the lower surface 92 , by the rotation of the substrate 9 , the pure water system spreads toward the outer peripheral edge of the substrate 9 and the pure water system is supplied to the entirety of the upper surface 91 and the lower surface 92 . By supplying pure water, the chemical solution adhering to the upper surface 91 is removed. In addition, the lower surface 92 was washed with pure water. In addition, pure water supplied to the lower surface 92 can be discharged through the gap between the outer peripheral ring portion 23 and the holding base 21 . After the supply of pure water continues for a predetermined time, the supply of pure water is stopped.

Then, by the barrier plate elevating mechanism 54, the barrier plate 51 is also lowered from the liquid treatment position shown by the two-dot chain line in FIG. 6 and arranged at the drying treatment position shown by the solid line in FIG. 6 (step S17). The dry processing position is a position slightly below the liquid processing position. Thereby, the width of the processing space 81 in the up-down direction is narrowed to, for example, 3 mm. Even when the barrier plate 51 is disposed at the drying treatment position, the upper end of the outer cover portion 42 approaches the peripheral wall portion 52 over the entire circumference and faces in the radial direction. In detail, as shown by the width W indicated by the arrow in FIG. The width (width in the radial direction) between the outer peripheral surfaces 522 is the same. In this way, the opening area between the outer cover portion 42 and the peripheral wall portion 52 becomes constant at the two processing positions. The above-mentioned width W is the minimum width of the gas flow path from the airflow forming part 61 to the gas inside the outer cover part 42, and is, for example, 1.5 mm to 3.0 mm.

When the barrier plate 51 is arranged at the drying processing position, the substrate rotation mechanism 3 sets the rotation speed of the substrate 9 to be higher than when the above-mentioned processing liquid (that is, the chemical solution and pure water) is supplied, thereby performing the drying processing of the substrate 9 (spin drying) (step S18). At this time, the rotation speed of the barrier plate 51 is also increased, thereby also removing the processing liquid attached to the lower surface 512 of the barrier plate 51 . The inert gas is continuously supplied from the upper nozzle 71 to the processing space 81 while the drying process of the substrate 9 is performed. In addition, IPA may be supplied to the upper surface 91 of the substrate 9 before the drying process of the substrate 9 to replace the pure water on the upper surface 91 with IPA.

When the drying process is finished, the rotation of the barrier plate 51 and the rotation of the substrate 9 are stopped (steps S19, S20). Next, the barrier plate 51 is lifted up by the barrier plate elevating mechanism 54 to be disposed at a separated position from the substrate 9, and the ejection of the inert gas from the upper nozzle 71 is stopped. Moreover, the outer cover part 42 and the inner cover part 43 are arrange|positioned at a lower position. Thereafter, the substrate 9 is carried out from the substrate processing apparatus 1 (step S21). In carrying out the substrate 9 , first, the plurality of abutting portions 224 are arranged at the release position shown by the solid line in FIG. 3 by the ring lifting mechanism 29 to release the holding of the substrate 9 . At this time, the substrate 9 is supported from below by the plurality of support plate portions 223 . Next, the plurality of support pins 25 ascend and move to a support position above the outer peripheral ring portion 23 . Thereby, the substrate 9 is transferred from the plurality of support plate portions 223 to the plurality of support pins 25 . Thereafter, the substrate 9 on the plurality of support pins 25 is picked up by the transport mechanism that enters the inside of the chamber 6 through the loading and unloading port, and is carried out to the outside. In this way, the processing of the substrate 9 in the substrate processing apparatus 1 ends.

Here, a substrate processing apparatus of a comparative example in which the outer peripheral ring portion 23 is omitted from the substrate processing apparatus 1 of FIG. 1 is assumed. During the processing of the substrate 9 , the substrate holder 2 rotates together with the substrate 9 in a state where the barrier plate 51 is disposed at the liquid processing position or the drying processing position. At this time, between the lower surface 512 of the barrier plate 51 and the upper surface 211 of the holding base 21 , the air that has collided with the plurality of support parts 22 rotating together with the substrate 9 not only flows along the upper surface of the holding base 21 The direction of the surface 211 expands, and also expands toward the side of the barrier plate 51, so that the airflow is greatly disturbed. In this way, ambient air enters to the side of the upper surface 91 or the side of the lower surface 92 of the substrate 9 in the vicinity of the outer peripheral edge of the substrate 9 . As a result, the inert gas atmosphere cannot be maintained in the vicinity of the outer peripheral edge of the upper surface 91 of the substrate 9 , and the uniformity of processing on the upper surface 91 decreases. In addition, when the air around the substrate 9 contains mist of the processing liquid or the like, the upper surface 91 and the lower surface 92 are contaminated. Furthermore, there may be a case in which a negative pressure lower than the surrounding pressure is generated in the vicinity of the rear of each supporting portion 22 in the rotation direction, and in this case the surrounding air enters into the outer periphery of the substrate 9. The edge is also inside.

In the substrate processing apparatus of the comparative example, it is also considered that the processing space in the vertical direction The width of 81 is reduced or the flow rate of the inert gas toward the processing space 81 is increased, thereby suppressing ambient air from entering the side of the upper surface 91 . However, in reducing the width of the processing space 81 , it is necessary to strictly control the allowable ranges of dimensional accuracy and position adjustment of various constituent members, and the manufacturing cost of the apparatus increases. In addition, when the flow rate of the inert gas is increased, the running cost increases because the usage amount of the inert gas increases. In fact, even in any of the situations described above, a certain degree of surrounding air will enter the side of the upper surface 91 due to the turbulence of the airflow generated by the plurality of supporting parts 22 .

In contrast, in the substrate processing apparatus 1 of FIG. 1 , the substrate holding unit 2 is provided with an outer peripheral ring portion 23 which is an annular plate member and surrounds the substrate 9 . The inner peripheral edge of the outer peripheral ring portion 23 is close to the outer peripheral edge of the substrate 9 , and most of the support portions 22 are covered by the outer peripheral ring portion 23 . In the substrate processing apparatus 1, since the outer peripheral ring portion 23 suppresses the expansion of the air that has collided with each support portion 22 toward the side of the barrier plate 51 during the rotation of the substrate holding portion 2, it is possible to suppress (reduce) The turbulence of the air flow in the vicinity of the outer peripheral edge of the substrate 9 generated by the portion 22. In other words, the airflow near the outer peripheral edge of the substrate 9 can be rectified by the outer peripheral ring portion 23 .

Thereby, entry of ambient air in the vicinity of the outer peripheral edge of the substrate 9 to the side of the upper surface 91 or the side of the lower surface 92 can be suppressed. As a result, the inert atmosphere can be maintained over substantially the entire upper surface 91 , and the uniformity of processing on the upper surface 91 can be improved. In addition, contamination of the upper surface 91 and the lower surface 92 can also be suppressed. In the substrate processing apparatus 1 having the outer peripheral ring portion 23, even if the width of the processing space 81 in the vertical direction is increased, the inert atmosphere of the processing space 81 can be maintained to a certain extent, so that various Therefore, the manufacturing cost of the substrate processing apparatus 1 can be reduced due to the allowable range of the dimensional accuracy and position adjustment of the constituent members.

The outer peripheral edge of the outer peripheral ring portion 23 is located radially outward of each supporting portion 22 , so that more parts of the supporting portion 22 can be covered by the outer peripheral ring portion 23 . As a result, the turbulence of the airflow due to the plurality of supporting parts 22 can be further reduced. In addition, in the substrate holding part 2, the The rotation shaft portion 222 of the connecting portion 224 is located radially outside of the base plate 9 . In this way, the rotation shaft portion 222 required for the rotation of the contact portion 224 is arranged at a position not facing the lower surface 92 of the base plate 9, thereby reducing the friction caused by the rotation shaft portion 222 and the surrounding members of the rotation shaft portion 222. The influence of the turbulence of the generated air flow on the substrate 9 . In addition, depending on the design of the substrate holding portion 2 , a part of each support portion 22 may be located radially outward from the outer peripheral edge of the outer peripheral ring portion 23 .

Next, a substrate processing apparatus of another comparative example in which the peripheral wall portion 52 is omitted from the substrate processing apparatus 1 of FIG. 1 is assumed. During the processing of the substrate 9 , the barrier plate 51 is rotated at a high speed in a state where the barrier plate 51 is disposed at the liquid processing position or the drying process position. At this time, a strong airflow flying outward occurs in the upper surface 511 of the barrier plate 51 . This airflow collides with the downward airflow (downdraft) around the barrier plate 51 , and turbulence of the airflow occurs in the vicinity of the outer peripheral edge of the substrate 9 . In this way, the environment inside the cover (ambient atmosphere including mist or the like of the chemical solution) diffuses and the upper surface 91 and the lower surface 92 of the substrate 9 may be contaminated.

In addition, like disposing the barrier plate 51 at the liquid processing position and the drying processing position in the substrate processing apparatus 1, when performing one type of processing on the substrate 9 in the substrate processing apparatus of this other comparative example and when performing another type of processing on the substrate 9 When the width of the processing space 81 in the vertical direction is different during processing, the distance between the upper end of the cover portion and the outer peripheral end surface of the barrier plate 51 varies. In this case, the state of the airflow flowing into the cover portion changes, the environment inside the cover portion (ambient atmosphere including mist, etc. of the chemical solution) diffuses, and the upper surface 91 and the lower surface 92 of the substrate 9 are contaminated. possibility.

In contrast, in the substrate processing apparatus 1 of FIG. 1 , a peripheral wall portion 52 protruding upward from the outer peripheral portion 513 of the barrier plate 51 is provided. Thereby, the airflow flying outward on the upper surface 511 of the barrier plate 51 can be reduced, and the turbulence of the airflow in the vicinity of the outer peripheral edge of the substrate 9 can be suppressed. In other words, the airflow in the vicinity of the outer periphery of the substrate 9 can be rectified. As a result, diffusion of the ambient atmosphere inside the cover parts (outer cover part 42 and inner cover part 43 ) can be suppressed.

In order to more reliably reduce the airflow flying outward on the upper surface 511 of the barrier plate 51, the height of the peripheral wall portion 52 is preferably 10 mm or more. The upper limit of the height of the peripheral wall portion 52 may be determined within a range in which the weight of the peripheral wall portion 52 does not become too large, and is, for example, 15 mm. In addition, the inner peripheral surface 521 of the peripheral wall portion 52 may be inclined with respect to the upper surface 511 of the barrier plate 51 within the range of reducing airflow flying outward from the upper surface 511 . In the section of the barrier plate 51 and the peripheral wall portion 52 including the central axis J1 (see FIG. 1 ), the angle formed by the upper surface 511 of the barrier plate 51 and the inner peripheral surface 521 of the peripheral wall portion 52 is, for example, 60 degrees to 120 degrees. , preferably 75 degrees to 105 degrees. The thickness of the peripheral wall portion 52 may be appropriately determined in consideration of the strength of the material used, the centrifugal force generated by rotation, and the like.

Furthermore, in the substrate processing apparatus 1, even in the case where the width of the processing space 81 in the up and down direction is different when one type of processing is performed on the substrate 9 and when another type of processing is performed on the substrate 9, when the one type of processing and the other type of processing are performed on the substrate 9, the width of the processing space 81 is different. In another process, in both cases, the upper end of the cover portion (in the above processing example, the outer cover portion 42 ) faces the peripheral wall portion 52 in the radial direction. Thereby, the minimum width of the flow path (or the minimum area of the flow path) of the air flow toward the inside of the cover can be kept constant during the one type of processing and the other type of processing. In this way, in the substrate processing apparatus 1 , the width of the processing space 81 can be changed according to the content of the processing on the substrate 9 , and the state of the airflow flowing into the cover portion can be kept constant. As a result, diffusion of the ambient atmosphere in the inside of the cover portion can be easily suppressed.

Various changes can be made in the above-described substrate processing apparatus 1 .

As shown in FIG. 7 , the outer peripheral ring portion 23 may be supported by a ring support member 233 different from the support portion 22 . On the other hand, in the substrate holding unit 2 shown in FIG. 7 , not only the supporting unit 22 but also the ring supporting member 233 cause the air flow to be disturbed. Therefore, from the viewpoint of more reliably suppressing the turbulence of the airflow in the vicinity of the outer peripheral edge of the substrate 9 , it is preferable that the outer peripheral ring portion 23 is supported by the plurality of support portions 22 . In addition, in the substrate holding part 2 of FIG. 7, although the rotation shaft part 222a of the support part 22 overlaps with the board|substrate 9 in planar view, the airflow generated by the rotation shaft part and the surrounding members of the rotation shaft part is reduced. From the perspective of the influence of the disorder on the substrate 9, it is preferable that the rotation axis is located at the base radially outward of the plate 9 .

In the example of FIG. 3 and FIG. 7 , although a part of each support portion 22 is covered by the outer peripheral ring portion 23 , the substrate holding portion 2 may be designed such that the entire support portion 22 is covered by the outer peripheral ring portion 23 . In the substrate processing apparatus 1 , at least a part of each support portion 22 needs only to be covered by the outer peripheral ring portion 23 .

The outer peripheral ring portion 23 only needs to be substantially annular, and a part in the circumferential direction may be notched according to design. From the viewpoint of suppressing the expansion of the air colliding with the support portion 22 toward the barrier plate 51 side by the rotation of the substrate holding portion 2 , the outer peripheral ring portion 23 preferably includes a portion extending from each support portion 22 toward the front side in the rotation direction.

In the example of FIG. 1 , the entire outer peripheral ring portion 23 is covered by the barrier plate 51 , but depending on the design of the substrate processing apparatus 1 , a part of the outer peripheral ring portion 23 may be arranged outside the barrier plate 51 in plan view. That is, it is sufficient that at least a part of the outer peripheral ring portion 23 overlaps the barrier plate 51 arranged at a predetermined processing position in plan view. Thereby, entry of ambient air in the vicinity of the outer peripheral edge of the substrate 9 to the side of the upper surface 91 can be suppressed. Preferably, the entire circumference of the inner peripheral edge of the outer peripheral ring portion 23 overlaps with the barrier plate 51 in plan view. Thereby, the entry of ambient air in the vicinity of the outer peripheral edge of the substrate 9 to the side of the upper surface 91 can be suppressed over the entire circumference. Likewise, it is preferable that the entire circumference of the inner peripheral edge of the outer peripheral ring portion 23 overlaps with the holding base 21 in plan view. Thereby, it is possible to suppress the entry of ambient air in the vicinity of the outer peripheral edge of the substrate 9 to the side of the lower surface 92 over the entire circumference.

If the peripheral wall portion 52 is provided on the outer peripheral edge portion 513 of the upper surface 511 of the barrier plate 51 , it may be provided at a position slightly inward (on the side of the central axis J1 ) from the outer peripheral end surface of the barrier plate 51 .

The barrier plate 51 can also be attached to the substrate holder 2 when processing the substrate 9 , whereby the barrier plate 51 rotates together with the substrate holder 2 . For example, the support rod 221 in FIG. 3 protrudes above the outer peripheral ring portion 23, and when the substrate 9 is processed, the barrier plate 51 is inserted into the upper end of the support rod 221 in such a way that the recess provided on the lower surface 512 of the barrier plate 51 51 is placed on the substrate holding unit 2 . Thereby, the barrier plate 51 and The substrate holding part 2 is connected. In such a substrate processing apparatus 1 , the substrate rotation mechanism 3 can also serve as the barrier plate rotation mechanism 53 .

In the case where the substrate holding portion 2 is not provided with the outer peripheral ring portion 23 , a substrate holding portion for suction-holding the lower surface 92 of the substrate 9 may also be employed. Furthermore, in the case where the barrier plate 51 is not provided with the peripheral wall portion 52, the barrier plate rotation mechanism 53 may also be omitted.

In the substrate processing apparatus 1 , an elevating mechanism for moving the substrate holding portion 2 in the vertical direction relative to the barrier plate 51 may be provided. That is, the barrier plate 51 only needs to relatively move in the vertical direction with respect to the substrate holding part 2 .

In the substrate processing apparatus 1 , only either the upper surface 91 or the lower surface 92 of the substrate 9 may be treated by the processing liquid. The substrate to be processed in the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or other substrates. In addition, the substrate processing apparatus 1 can also be used for processing a substrate having an outer shape other than a disc shape.

The configurations in the above-described embodiments and modifications may be appropriately combined as long as they do not contradict each other.

While the invention has been described and illustrated in detail, the foregoing description is illustrative only and not restrictive. Therefore, various changes and aspects are possible as long as they do not depart from the scope of the present invention.

1: Substrate processing device

2: Substrate holding part

3: Substrate rotation mechanism

6: chamber

9: Substrate

21: Hold the base

22: Support part

23: Outer peripheral ring

29: ring lifting mechanism

31, 531: Shaft

41: Hood unit

42: Outer cover

43: inner cover part

44: Hood Lifting Mechanism

51: barrier board

52: Peripheral wall

53: Barrier plate rotation mechanism

54: Baffle plate lifting mechanism

61: Airflow forming part

71: Upper nozzle

72: Lower nozzle

81: Handling Space (Space)

91: upper surface (of the substrate)

92: lower surface (main surface)

211: (base) upper surface

224: contact part

241: ring department

242: Communication Agency

421, 431: the upper part of the cover

511: (of the barrier plate) upper surface

512: Lower surface (of the barrier plate)

513: (of the barrier plate) outer peripheral edge

521: inner peripheral surface

522: Outer peripheral surface

611: fan

612: filter

J1: central axis

Claims (7)

A substrate processing apparatus comprising: a substrate holding unit that holds a substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holding unit about a central axis facing an up-down direction; The plate shape with the surface facing each other is arranged at a processing position close to the upper surface when processing the aforementioned substrate, thereby forming a processing space between the aforementioned barrier plate and the aforementioned upper surface; in the aforementioned processing position, the aforementioned barrier plate is facing the entire surface of the aforementioned upper surface of the aforementioned substrate; the aforementioned substrate holding portion is provided with: a holding base arranged below the aforementioned substrate; a plurality of supporting portions arranged in the circumferential direction on the aforementioned holding base, and There are respectively a plurality of abutting parts, and the plurality of abutting parts are abutted against the outer peripheral edge of the aforementioned substrate when holding the aforementioned substrate; and an outer peripheral ring part is a ring-shaped plate member; In a state where the outer side of the substrate is close to the outer peripheral edge of the substrate, the outer peripheral ring part surrounds the periphery of the substrate; a part of each support part is located below the outer peripheral ring part, and the abutment of each support part The upper end surface of the part is approximately the same height as the upper surface of the aforementioned outer peripheral ring part, and the aforementioned outer peripheral ring part covers most of each of the aforementioned support parts. The aforementioned blocking panels overlap at the processing location. The substrate processing apparatus according to claim 1, wherein the outer peripheral edge of the outer peripheral ring portion is located radially outward of each of the support portions. The substrate processing apparatus as described in claim 1, wherein each of the above-mentioned supporting parts has a rotating shaft part for rotating the above-mentioned abutting part; The rotation shaft portion is located radially outside the base plate. The substrate processing apparatus according to claim 1, wherein the outer peripheral ring portion is supported by a plurality of the support portions. The substrate processing apparatus according to claim 1, further comprising: an inert gas supply unit for supplying inert gas to the processing space. The substrate processing apparatus according to claim 1, further comprising: a barrier plate rotation mechanism that rotates the barrier plate around a central axis facing the vertical direction; and a peripheral wall portion that extends from the outer peripheral edge of the barrier plate protruding upwards. The substrate processing apparatus according to any one of claims 1 to 6, wherein the barrier plate and the substrate are disc-shaped, and the diameter of the barrier plate is equal to or larger than the diameter of the substrate.

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