WO2020008784A1 - Substrate processing device - Google Patents

Substrate processing device Download PDF

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Publication number
WO2020008784A1
WO2020008784A1 PCT/JP2019/022219 JP2019022219W WO2020008784A1 WO 2020008784 A1 WO2020008784 A1 WO 2020008784A1 JP 2019022219 W JP2019022219 W JP 2019022219W WO 2020008784 A1 WO2020008784 A1 WO 2020008784A1
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WO
WIPO (PCT)
Prior art keywords
substrate
blocking plate
outer peripheral
processing
processing apparatus
Prior art date
Application number
PCT/JP2019/022219
Other languages
French (fr)
Japanese (ja)
Inventor
幸嗣 安藤
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2020008784A1 publication Critical patent/WO2020008784A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a substrate processing apparatus.
  • a substrate processing apparatus that performs various processes on a semiconductor substrate (hereinafter, simply referred to as “substrate”) has been used.
  • substrate a substrate processing apparatus that performs various processes on a semiconductor substrate
  • a substrate for example, in Japanese Patent Application Laid-Open No. 2016-72343 (Document 1), while a top plate (blocking plate) facing an upper surface of a substrate is arranged at a position close to the upper surface, a chemical solution treatment, a cleaning process.
  • a substrate processing apparatus for performing a drying process is disclosed.
  • the top plate by providing a substantially cylindrical member extending downward from the outer peripheral edge of the disk-shaped main body, when the top plate is moved to a position further closer to the substrate after the chemical solution treatment.
  • Japanese Patent Application Laid-Open No. 9-314022 discloses a substrate rotation holding device that rotates a substrate in a cup.
  • an annular portion is provided on an outer peripheral side of a substrate holding portion that holds the substrate in a horizontal posture, and the annular portion has an annular flat surface extending in a horizontal direction toward an inner wall surface of the cup.
  • the airflow speed in the gap between the inner wall of the cup and the outer peripheral end of the annular portion increases, so that the mist in the cup can be prevented from winding up.
  • an annular member surrounding the substrate held by the spin chuck is provided.
  • the annular member has an upper annular hydrophilic surface surrounding the peripheral edge of the upper surface of the substrate and a lower annular hydrophilic surface surrounding the peripheral edge of the lower surface of the substrate, so that the upper surface and the lower surface of the substrate are hydrophobic. Also, it is possible to cover the entire upper surface and the lower surface of the substrate with the processing liquid.
  • the present invention is directed to a substrate processing apparatus, and an object of the present invention is to suppress turbulence of an airflow near an outer peripheral edge of a substrate.
  • One preferred substrate processing apparatus is a substrate holding unit that holds a substrate in a horizontal state, a substrate rotation mechanism that rotates the substrate holding unit around a central axis that faces in a vertical direction, and an upper surface of the substrate.
  • the substrate is disposed at a processing position close to the upper surface, and a shielding plate that forms a processing space between the upper surface and the upper surface.
  • the blocking plate faces the entire upper surface of the substrate
  • the substrate holding unit includes a holding base disposed below the substrate, and a plurality of abutting portions that abut on an outer peripheral edge of the substrate when holding the substrate.
  • a plurality of support portions arranged in the circumferential direction on the holding base, and an annular plate member surrounding the periphery of the substrate in a state in which an inner peripheral edge is close to the outer peripheral edge of the substrate, At least the support Covers part, and at least a portion with the blocking plate disposed in said processing position and a peripheral ring portion which overlaps in a plan view.
  • the substrate processing apparatus it is possible to suppress the turbulence of the air flow near the outer peripheral edge of the substrate.
  • the outer peripheral edge of the outer peripheral ring portion is located radially outward of each of the support portions.
  • each of the support portions has a rotation shaft for rotating the contact portion, and the rotation shaft is located radially outside the substrate.
  • the outer peripheral ring portion is supported by the plurality of support portions.
  • the substrate processing apparatus further includes an inert gas supply unit that supplies an inert gas to the processing space.
  • the substrate processing apparatus includes a blocking plate rotating mechanism configured to rotate the blocking plate around the vertical axis, and protrudes upward from an outer peripheral edge of the blocking plate. And a peripheral wall portion.
  • the blocking plate and the substrate are disc-shaped, and the diameter of the blocking plate is equal to or larger than the diameter of the substrate.
  • Another preferred substrate processing apparatus is a substrate holding unit that holds a substrate in a horizontal state, a substrate rotating mechanism that rotates the substrate holding unit around a central axis that faces in a vertical direction, and an upper surface of the substrate.
  • a blocking plate that is formed in a plate-like shape and that is disposed at a processing position close to the upper surface when processing the substrate, thereby forming a processing space between the substrate and the upper surface; and a central axis that faces the vertical direction.
  • a peripheral wall portion protruding upward from an outer peripheral edge of the shield plate.
  • the substrate processing apparatus further includes an airflow forming unit that forms a downward airflow above the blocking plate.
  • the substrate processing apparatus further includes a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate, and a cup unit that receives the processing liquid scattered from the upper surface of the substrate.
  • the upper end of the cup portion is close to the peripheral wall portion when the blocking plate is disposed at the processing position.
  • an upper end of the cup portion may radially oppose the peripheral wall portion.
  • the substrate processing apparatus further includes an elevating mechanism for moving the blocking plate relatively in the up-down direction with respect to the substrate holding unit, and performing one processing on the substrate; and At the time of another processing, the width of the processing space in the vertical direction is different, and at the time of the one processing, and at the time of the other processing, the upper end of the cup portion is in contact with the peripheral wall portion and the radial direction. Oppose.
  • the blocking plate and the substrate are disc-shaped, and the diameter of the blocking plate is equal to or larger than the diameter of the substrate.
  • FIG. 2 is a diagram illustrating a configuration of a substrate processing apparatus.
  • FIG. 3 is a diagram illustrating a configuration of a gas-liquid supply unit. It is a top view showing a substrate holding part. It is a perspective view which shows a support part.
  • FIG. 3 is a diagram illustrating a flow of processing a substrate by the substrate processing apparatus. It is a figure showing a substrate processing device. It is a figure showing other examples of a substrate holding part.
  • FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to one embodiment of the present invention.
  • the substrate processing apparatus 1 is a single-wafer type apparatus that processes the disk-shaped substrates 9 one by one, and is also called a substrate cleaning apparatus.
  • the substrate processing apparatus 1 includes a substrate holding unit 2, a substrate rotating mechanism 3, a cup unit 41, a cup elevating mechanism 44, a blocking plate 51, a blocking plate rotating mechanism 53, and a blocking plate elevating mechanism 54. These components in the substrate processing apparatus 1 are housed in a box-shaped chamber 6.
  • the chamber 6 forms an approximately closed internal space.
  • the chamber 6 is also a part of the substrate processing apparatus 1.
  • the substrate holding section 2 includes a holding base 21, a plurality of support sections 22, and an outer peripheral ring section 23.
  • the holding base 21 has a disk shape centered on a central axis J1 pointing in the vertical direction.
  • the plurality of support portions 22 are provided on the upper surface 211 of the holding base 21.
  • the plurality of support portions 22 are arranged at equal intervals in the circumferential direction on the circumference around the center axis J1 (see FIG. 3 described later).
  • An upper surface 211 of the holding base 21 located below the substrate 9 and a main surface 92 (hereinafter, referred to as a “lower surface 92”) facing the lower side of the substrate 9 are parallel to each other, and are directly separated by a gap. Oppose.
  • the number of the support portions 22 may be arbitrarily determined, and is typically three or more. The details of the plurality of support portions 22 and the outer peripheral ring portion 23 will be described later.
  • the upper end of the shaft portion 31 about the center axis J1 is fixed.
  • the substrate rotating mechanism 3 having a motor rotates the lower end of the shaft 31
  • the substrate holding unit 2 rotates about the central axis J ⁇ b> 1 together with the substrate 9.
  • a hollow portion extending in the vertical direction is provided on the central axis J1
  • the lower nozzle 72 is disposed in the hollow portion.
  • the lower nozzle 72 extends vertically, and the upper end surface of the lower nozzle 72 is arranged near the upper surface 211 of the holding base 21.
  • the lower nozzle 72 is located on the lower surface 92 side of the substrate 9.
  • the lower nozzle 72 is located at the center of the holding base 21 and directly faces the center of the lower surface 92 of the substrate 9.
  • the cup unit 41 includes an outer cup portion 42 and an inner cup portion 43.
  • the outer cup part 42 and the inner cup part 43 are both substantially cylindrical with the center axis J1 as the center.
  • the inner cup 43 surrounds the periphery of the holding base 21, and the outer cup 42 surrounds the periphery of the inner cup 43.
  • Each of the outer cup portion 42 and the inner cup portion 43 has a cup upper portion 421, 431 whose diameter gradually decreases upward.
  • the upper end of the outer cup portion 42 is the upper end of the cup upper portion 421, and the upper end of the inner cup portion 43 is the upper end of the cup upper portion 431.
  • the upper end of the outer cup portion 42 and the upper end of the inner cup portion 43 are both annular.
  • the cup lifting mechanism 44 includes, for example, a motor and a ball screw, and moves the outer cup 42 and the inner cup 43 in the vertical direction.
  • the outer cup portion 42 is selectively disposed at a predetermined upper position or a lower position
  • the inner cup portion 43 is also selectively disposed at a predetermined upper position or a lower position.
  • the cup upper portion 421 of the outer cup portion 42 is attached to the substrate 9 on the substrate holding portion 2.
  • the cup upper portion 431 of the inner cup portion 43 faces the substrate 9 in the radial direction.
  • various processing liquids scattered from the outer peripheral edge of the substrate 9 are received by the inner peripheral surface of the outer cup portion 42 or the inner peripheral surface of the inner cup portion 43.
  • the processing liquid is collected via a discharge pipe (not shown) provided at the bottom of each of the cups 42 and 43.
  • the discharge pipe is connected to the gas-liquid discharge part, and can discharge gas and liquid to the outside.
  • the inner cup portion 43 is disposed at the lower position, and the outer cup portion 42 is also disposed at the lower position. Thereby, the upper end of the inner cup portion 43 and the upper end of the outer cup portion 42 are arranged below the substrate 9 on the substrate holding portion 2, and are prevented from interfering with an external transport mechanism.
  • the outer cup part 42 and the inner cup part 43 may be arrangeable at positions other than the upper position and the lower position.
  • the blocking plate 51 has a disk shape centered on the central axis J1.
  • the blocking plate 51 is arranged above the substrate holding unit 2.
  • the lower surface 512 of the blocking plate 51 vertically opposes a main surface 91 (hereinafter, referred to as “upper surface 91”) of the substrate holding unit 2 that faces upward of the substrate 9.
  • the lower surface 512 of the blocking plate 51 is parallel to the upper surface 91 of the substrate 9.
  • the diameter of the blocking plate 51 is equal to or larger than the diameter of the substrate 9, and the entire upper surface 91 of the substrate 9 is covered by the blocking plate 51.
  • the diameter of the blocking plate 51 is the same as or slightly larger than the diameter of the holding base 21. Therefore, the blocking plate 51 covers the entire holding base 21.
  • the diameter of the blocking plate 51 may be smaller than the diameter of the holding base 21.
  • the upper surface 511 facing the side opposite to the substrate 9 spreads substantially perpendicularly to the central axis J1.
  • the upper surface 511 of the blocking plate 51 is also parallel to the upper surface 91 of the substrate 9.
  • An outer peripheral edge 513 on the upper surface 511 of the blocking plate 51 is provided with a peripheral wall 52 protruding upward.
  • the peripheral wall portion 52 projects from the upper surface 511 in a cylindrical shape.
  • the peripheral wall portion 52 includes an inner peripheral surface 521 and an outer peripheral surface 522. In the present embodiment, both the inner peripheral surface 521 and the outer peripheral surface 522 are cylindrical surfaces centered on the central axis J1. As shown in FIG.
  • the inner peripheral surface 521 of the peripheral wall portion 52 is substantially perpendicular to the upper surface 511 of the shielding plate 51.
  • the outer peripheral surface 522 of the peripheral wall portion 52 is also substantially perpendicular to the blocking plate 51.
  • the outer peripheral surface 522 of the peripheral wall portion 52 and the outer peripheral end surface of the blocking plate 51 are included in the same cylindrical surface centered on the central axis J1.
  • the lower end of the shaft portion 531 around the central axis J1 is fixed.
  • the blocking plate rotating mechanism 53 having a motor rotates the upper end of the shaft portion 531 so that the blocking plate 51 rotates about the central axis J1.
  • the rotation of the blocking plate 51 by the blocking plate rotating mechanism 53 is performed independently of the rotation of the substrate 9 by the substrate rotating mechanism 3.
  • a hollow portion extending in the vertical direction is provided on the central axis J1, and the upper nozzle 71 is disposed in the hollow portion.
  • the upper nozzle 71 extends in the up-down direction, and the lower end surface of the upper nozzle 71 is arranged near the lower surface 512 of the blocking plate 51.
  • the upper nozzle 71 is located on the upper surface 91 side of the substrate 9.
  • the upper nozzle 71 is located at the center of the lower surface 512 of the blocking plate 51 and directly faces the center of the upper surface 91 of the substrate 9.
  • the blocking plate lifting / lowering mechanism 54 includes, for example, a motor and a ball screw, and moves the blocking plate 51 together with the blocking plate rotating mechanism 53 in the vertical direction.
  • the blocking plate 51 is disposed at a processing position close to the upper surface 91 of the substrate 9 (see FIG. 1 and FIG. 6 described later), and the lower surface 512 of the blocking plate 51 and the upper surface 91 of the substrate 9 are disposed.
  • a space 81 having a small width in the vertical direction hereinafter, referred to as “processing space 81”.
  • An airflow forming unit 61 is attached to the lid of the chamber 6.
  • the airflow forming part 61 is provided above the blocking plate 51 and the cup unit 41.
  • the airflow forming unit 61 is, for example, a fan filter unit (FFU), and includes a fan 611 and a filter 612.
  • the fan 611 sends air outside the chamber 6 into the chamber 6 via the filter 612.
  • the filter 612 is, for example, a HEPA filter and removes particles in the air.
  • the flow of gas (here, clean air) flowing downward from above in the chamber 6, that is, a descending airflow is formed by the airflow forming unit 61 above the blocking plate 51.
  • a downward airflow may be formed by nitrogen gas or the like.
  • An exhaust pipe (not shown) is provided below the chamber 6, and gas in the chamber 6 is exhausted outside the chamber 6 via the exhaust pipe. In the processing of the substrate 9 described later, a constant downflow airflow is always formed.
  • FIG. 2 is a diagram showing a configuration of the gas-liquid supply unit 7 provided in the substrate processing apparatus 1.
  • FIG. 2 also shows a control unit 10 that performs overall control in the substrate processing apparatus 1.
  • the control unit 10 is realized by a computer executing a predetermined program.
  • the control unit 10 may be configured by a dedicated electric circuit, or a dedicated electric circuit may be partially used.
  • the gas-liquid supply unit 7 includes an upper processing liquid supply unit 73, a lower processing liquid supply unit 74, and an inert gas supply unit 75.
  • the upper surface processing liquid supply unit 73 includes the above-described upper nozzle 71, a chemical liquid supply source 731, an IPA supply source 732, and a pure water supply source 733.
  • a processing liquid ejection port 711 and a gas ejection port 712 are formed on the lower end surface of the upper nozzle 71.
  • a processing liquid discharge port 711 is provided at the center of the lower end surface of the upper nozzle 71, and a substantially annular gas outlet 712 is provided around the processing liquid discharge port 711.
  • a chemical liquid supply source 731, an IPA supply source 732, and a pure water supply source 733 are connected to the processing liquid flow path communicating with the processing liquid discharge port 711 via a valve.
  • the chemical is supplied from the chemical supply source 731 to the processing liquid flow path of the upper nozzle 71, the chemical is discharged from the processing liquid discharge port 711 toward the center of the upper surface 91 of the substrate 9.
  • the chemical is, for example, an etchant such as hydrofluoric acid or an aqueous solution of tetramethylammonium hydroxide.
  • IPA isopropyl alcohol
  • the inert gas supply unit 75 includes the above-described upper nozzle 71 and an inert gas supply source 751.
  • an inert gas supply source 751 is connected to a gas passage communicating with the gas ejection port 712 via a valve.
  • the inert gas is a gas having poor reactivity with the substrate 9 itself and the thin film formed on the substrate 9, and is, for example, a nitrogen gas, an argon gas, a helium gas, or the like.
  • nitrogen gas is supplied to the processing space 81 as an inert gas.
  • the upper processing liquid supply unit 73 and the inert gas supply unit 75 share the upper nozzle 71.
  • the lower surface treatment liquid supply unit 74 includes the lower nozzle 72 described above and a pure water supply source 733.
  • a pure water supply source 733 is connected to the lower nozzle 72 via a valve. By supplying pure water from the pure water supply source 733 to the lower nozzle 72, the pure water is discharged from the lower nozzle 72 toward the center of the lower surface 92 of the substrate 9.
  • the upper surface processing liquid supply unit 73 and the lower surface processing liquid supply unit 74 share a pure water supply source 733.
  • another type of processing liquid may be supplied to the lower surface 92.
  • FIG. 3 is a plan view showing the substrate holding unit 2
  • FIG. 4 is a perspective view showing one support unit 22.
  • a plurality of support portions 22 are arranged on the holding base 21 at equal intervals in the circumferential direction.
  • each support portion 22 includes a support rod 221, a rotating shaft portion 222, a support plate portion 223, and a contact portion 224.
  • a plurality of bottomed holes are provided at equal intervals in the circumferential direction.
  • the cross-sectional shape of the hole perpendicular to the vertical direction is circular.
  • the support bar 221 extending in the vertical direction is arranged at the center of the hole, and the lower end of the support bar 221 is fixed to the bottom of the hole.
  • illustration of the holding base 21 is omitted.
  • the rotation shaft 222 is a hollow member having a cylindrical shape, is fitted into the support rod 221, and is disposed in a hole of the holding base 21.
  • the inner diameter of the rotation shaft 222 is slightly larger than the diameter of the support rod 221, and the outer diameter of the rotation shaft 222 is slightly smaller than the diameter of the hole.
  • the rotation shaft 222 is supported by the support rod 221 and the hole so as to be rotatable about the support rod 221.
  • the rotation shaft 222 may be rotatably supported using a bearing or the like.
  • the support plate 223 is a plate-like member that extends horizontally from the rotation shaft 222 along the upper surface 211 of the holding base 21.
  • the lower surface of the support plate 223 is close to the upper surface 211 of the holding base 21.
  • Most of the support plate portion 223 is disposed between an outer peripheral ring portion 23 described later and an upper surface 211 of the holding base 21.
  • the support plate portion 223 has a wedge shape in which the width in the horizontal direction decreases as the distance from the rotation shaft portion 222 increases.
  • the support plate portion 223 extends substantially in the circumferential direction, and moves radially inward as the distance from the rotation shaft portion 222 increases.
  • the contact portion 224 is a projection provided on the upper surface of the support plate 223.
  • the contact portion 224 is provided at a position separated from the rotation shaft portion 222.
  • the substrate holding unit 2 further includes a ring 241 and a transmission mechanism 242.
  • the ring portion 241 about the center axis J1 is disposed below the holding base 21, and is supported by a guide portion (not shown) so as to be movable in the vertical direction.
  • the transmission mechanism 242 is a link mechanism that connects the ring part 241 and the rotating shaft parts 222 of the plurality of support parts 22, and is provided inside and below the holding base 21.
  • the transmission mechanism 242 rotates the rotation shaft 222 in conjunction with the vertical movement of the ring 241.
  • the ring portion 241 and the transmission mechanism 242 rotate about the central axis J1 together with the holding base 21.
  • the ring elevating mechanism 29 includes, for example, a motor and a ball screw, and moves a moving body (nut) in the ball screw up and down by rotation of the motor.
  • the ring part 241 is inserted into the inner ring of the bearing, and the moving body of the ring elevating mechanism 29 is fixed to the outer ring of the bearing. This allows the ring elevating mechanism 29 to move the ring 241 in the vertical direction while the ring 241 is rotatable about the central axis J1.
  • the motor of the ring elevating mechanism 29 is fixed to a case that houses the substrate rotating mechanism 3.
  • the ring elevating mechanism 29 arranges the ring portion 241 at the first position in the vertical direction, as shown by a two-dot chain line in FIG. Abuts the outer peripheral edge of That is, the plurality of contact portions 224 are arranged at the holding positions, and the substrate 9 is held by the substrate holding portion 2.
  • the rotating shaft portion 222 rotates so that each contact portion 224 separates from the outer peripheral edge of the substrate 9,
  • the contact portion 224 is disposed at a release position indicated by a solid line in FIG. Thereby, the holding of the substrate 9 in the substrate holding unit 2 is released.
  • the substrate 9 is supported by the supporting plate portions 223 of the plurality of supporting portions 22. Supported from below.
  • the structure of the support portion 22 and the above-described mechanism for rotating the rotating shaft portion 222 are merely examples, and may be appropriately changed.
  • the substrate holding unit 2 further includes a plurality of support pins 25.
  • a plurality of support pins 25 On the upper surface 211 of the holding base 21, another plurality of holes are provided at equal intervals in the circumferential direction, and the plurality of support pins 25 are respectively disposed in the plurality of holes.
  • the plurality of support pins 25 are arranged at regular intervals in the circumferential direction. In the example of FIG. 3, each support pin 25 is arranged between two support portions 22 adjacent to each other in the circumferential direction. The positions of the plurality of support pins 25 in the radial direction are slightly closer to the center axis J1 than the plurality of contact portions 224 arranged at the holding position.
  • the plurality of support pins 25 are located slightly closer to the center axis J1 than the outer peripheral edge of the substrate 9.
  • the lower ends of the plurality of support pins 25 are fixed to another ring portion (not shown) centered on the central axis J1.
  • the other ring part is connected to a moving body of another ring elevating mechanism (not shown) via a bearing, similarly to the ring part 241 and the ring elevating mechanism 29. This allows the other ring portion to move up and down by the other ring lifting mechanism while the other ring portion is rotatable about the central axis J1.
  • the motor of the other ring elevating mechanism is fixed to a case accommodating the substrate rotating mechanism 3.
  • the other ring elevating mechanism arranges the other ring portion at the first position in the vertical direction so that the upper ends of the plurality of support pins 25 are the same as the upper surface 211 of the holding base 21 or the upper surface 211. It is arranged at a standby position lower than the above. A support position where the upper ends of the plurality of support pins 25 are higher than the upper ends of the plurality of contact portions 224 by the other ring elevating mechanism arranging the other ring portion at the second position in the vertical direction. Placed in
  • the outer peripheral ring portion 23 is an annular plate member disposed above the outer peripheral edge of the holding base 21.
  • the preferable outer peripheral ring portion 23 has a substantially annular shape centered on the central axis J1 and is continuous over the entire circumference.
  • the outer peripheral ring portion 23 is connected to the upper end of the support bar 221 in the plurality of support portions 22 and is fixed to the holding base 21. That is, the outer ring portion 23 is supported by the plurality of support portions 22.
  • the outer peripheral ring portion 23 is indicated by a two-dot chain line.
  • a cutout portion 232 is formed on the inner peripheral edge of the outer peripheral ring portion 23 to avoid contact with the contact portion 224 of each support portion 22 (the contact portion 224 arranged at the release position).
  • the inner diameter of the outer peripheral ring portion 23 is slightly larger than the diameter of the substrate 9.
  • the inner peripheral edge of the outer peripheral ring portion 23 is close to the outer peripheral edge of the substrate 9 outside the substrate 9 held by the substrate holding portion 2.
  • the radial distance between the inner peripheral edge of the outer peripheral ring portion 23 (excluding the cutout portion 232) and the outer peripheral edge of the substrate 9 is, for example, 0.5 to 2.0 mm.
  • the outer peripheral edge of the outer peripheral ring portion 23 is located radially outward of each support portion 22.
  • the outer peripheral ring portion 23 covers most of the support portions 22, more specifically, approximately the entire portion of the support portion 22 located radially outside the outer peripheral edge of the substrate 9. In other words, approximately the entire support portion 22 is located below the outer peripheral ring portion 23 and the substrate 9.
  • the outer diameter of the outer peripheral ring portion 23 is the same as or slightly smaller than the diameter of the holding base 21. Therefore, when viewed along the up-down direction, that is, in plan view, the entire outer peripheral ring portion 23 overlaps the holding base 21.
  • the outer diameter of the outer peripheral ring portion 23 is equal to or slightly smaller than the diameter of the blocking plate 51 (see FIG. 1). Therefore, in a plan view, the blocking plate 51 overlaps with the entire outer peripheral ring portion 23, and the whole of the outer peripheral ring portion 23 is covered with the blocking plate 51.
  • the width of the outer peripheral ring portion 23 in the radial direction is constant over the entire circumference except for the position of the cutout portion 232.
  • the width of the outer peripheral ring portion 23 is, for example, 2 to 10 mm. Depending on the design of the outer ring portion 23, the width of the outer ring portion 23 may vary in the circumferential direction.
  • the upper surface 231 of the outer peripheral ring portion 23 shown in FIG. 3 is substantially parallel to the lower surface 512 of the blocking plate 51 (see FIG. 1).
  • the lower surface of the outer ring portion 23 is also substantially parallel to the upper surface 211 of the holding base 21.
  • any part of the plurality of support parts 22 is located below the outer peripheral ring part 23.
  • the upper end surfaces of the support rod 221 and the contact portion 224 are substantially the same height as the upper surface 231 of the outer peripheral ring portion 23.
  • the upper surface 231 of the outer peripheral ring portion 23 has the same height as the upper surface 91 of the substrate 9 or has a higher height than the upper surface 91. Preferably, it is located below.
  • the upper surface 231 of the outer peripheral ring portion 23 and the upper surface 91 of the substrate 9 are arranged on the same plane perpendicular to the central axis J1.
  • FIG. 5 is a diagram showing a flow in which the substrate processing apparatus 1 processes the substrate 9.
  • the substrate 9 to be processed is carried into the substrate processing apparatus 1 (Step S11). Specifically, first, the plurality of support pins 25 in the substrate holding unit 2 in FIG. 3 are raised, and are disposed at a support position where the upper end is higher than the outer peripheral ring unit 23.
  • An openable / closable loading / unloading port (not shown) is provided on a side surface of the chamber 6 in FIG. 1.
  • the substrate 9 is transported into the chamber 6 by an external transport mechanism via the loading / unloading port. 25. After the transfer mechanism retracts out of the chamber 6, the plurality of support pins 25 descend.
  • the plurality of contact portions 224 are arranged at the release positions indicated by solid lines in FIG. 3, and the substrate 9 is transferred from the plurality of support pins 25 to the plurality of support plate portions 223.
  • the plurality of support pins 25 move to a standby position in the holding base 21.
  • the plurality of contact portions 224 are arranged at the holding positions in contact with the outer peripheral edge of the substrate 9 by the ring elevating mechanism 29, and the substrate 9 is held by the substrate holding portion 2.
  • both the outer cup portion 42 and the inner cup portion 43 are arranged at the lower position, and the blocking plate 51 is arranged at the separated position.
  • the blocking plate elevating mechanism 54 places the blocking plate 51 at the liquid processing position indicated by the solid line in FIG. 1, and moves between the lower surface 512 of the blocking plate 51 and the upper surface 91 of the substrate 9.
  • a processing space 81 is formed (Step S12).
  • the blocking plate 51 arranged at the liquid processing position is close to the upper surface 91 of the substrate 9.
  • the diameter of the blocking plate 51 is equal to or larger than the diameter of the substrate 9, and when the hollow portion of the blocking plate 51 is regarded as a part of the blocking plate 51, the blocking plate 51 is placed on the upper surface of the substrate 9 at the liquid processing position. 91 faces the entire surface.
  • the width of the processing space 81 in the up-down direction is, for example, 7 mm.
  • the processing space 81 enters an inert gas filled state filled with an inert gas (that is, an atmosphere having a low oxygen concentration and low humidity).
  • an inert gas that is, an atmosphere having a low oxygen concentration and low humidity.
  • the outer cup portion 42 is arranged at the upper position, and faces the substrate 9 in the radial direction.
  • the upper end of the outer cup portion 42 is close to the peripheral wall portion 52 over the entire circumference and opposes in the radial direction.
  • the upper end of the outer cup portion 42 is located about 3 mm below the upper end of the peripheral wall portion 52.
  • the inner cup portion 43 may face the substrate 9 in the radial direction.
  • the rotation of the substrate 9 is started by the substrate rotation mechanism 3 (Step S13).
  • the substrate 9 rotates together with the substrate holder 2 in a horizontal state.
  • the rotation of the blocking plate 51 is started by the blocking plate rotating mechanism 53 (step S14).
  • the blocking plate 51 rotates in a horizontal state.
  • the rotation speed of the blocking plate 51 is substantially the same as the rotation speed of the substrate 9, and the blocking plate 51 rotates in the same direction as the substrate 9.
  • the rotation speed and rotation direction of the blocking plate 51 may be different from the rotation speed and rotation direction of the substrate 9 depending on the type of processing on the substrate 9 and the like.
  • the chemical liquid is continuously supplied to the central part of the upper surface 91 of the substrate 9 via the upper nozzle 71 by the upper surface processing liquid supply unit 73 (Step S15).
  • the chemical liquid spreads toward the outer peripheral edge of the substrate 9 due to the centrifugal force due to the rotation of the substrate 9, and the chemical liquid is supplied to the entire upper surface 91.
  • the processing of the substrate 9 with the chemical is performed in a narrow space between the lower surface 512 of the blocking plate 51 and the upper surface 91 of the substrate 9, that is, the processing space 81 filled with an inert gas. Thereby, the uniformity of the chemical solution treatment on the substrate 9 can be improved.
  • the blocking plate 51 is moved down from the liquid processing position indicated by the two-dot chain line in FIG. 6 by the blocking plate elevating mechanism 54, and is disposed at the drying processing position indicated by the solid line in FIG. 6 (step S17).
  • the drying processing position is a position slightly lower than the liquid processing position. Thereby, the width of the processing space 81 in the vertical direction is reduced to, for example, 3 mm. Even in a state where the blocking plate 51 is arranged at the drying processing position, the upper end of the outer cup portion 42 is close to the peripheral wall portion 52 over the entire circumference and is opposed in the radial direction. In detail, as shown by an arrow W in FIG.
  • the width (the width in the radial direction) between the upper end of the outer cup portion 42 and the outer peripheral surface 522 of the peripheral wall portion 52 is determined by the position of the blocking plate 51 and the liquid processing position. The same applies to any of the drying processing positions.
  • the opening area between the outer cup portion 42 and the peripheral wall portion 52 is constant at the two processing positions.
  • the width W is the minimum width of the flow path of the airflow from the airflow forming portion 61 toward the inside of the outer cup portion 42, and is, for example, 1.5 to 3.0 mm.
  • the substrate rotating mechanism 3 increases the rotation speed of the substrate 9 from the time of supplying the processing liquid (that is, the chemical solution and the pure water), so that the drying processing of the substrate 9 is performed. (Spin dry) is performed (step S18). At this time, by increasing the rotation speed of the blocking plate 51, the processing liquid adhering to the lower surface 512 of the blocking plate 51 is also removed. While the substrate 9 is being dried, the supply of the inert gas from the upper nozzle 71 to the processing space 81 is continued. In addition, before the drying process of the substrate 9, IPA may be supplied on the upper surface 91 of the substrate 9, and pure water may be replaced with IPA on the upper surface 91.
  • the processing liquid that is, the chemical solution and the pure water
  • Step S19 and S20 the rotation of the blocking plate 51 and the rotation of the substrate 9 are stopped. Subsequently, the blocking plate 51 is raised by the blocking plate elevating mechanism 54 to be disposed at a position away from the substrate 9, and the ejection of the inert gas from the upper nozzle 71 is stopped. Further, the outer cup portion 42 and the inner cup portion 43 are arranged at the lower position. Thereafter, the substrate 9 is unloaded from the substrate processing apparatus 1 (Step S21). In carrying out the substrate 9, first, the plurality of abutting portions 224 are arranged at the release positions indicated by solid lines in FIG. 3 by the ring elevating mechanism 29, and the holding of the substrate 9 is released.
  • the substrate 9 is supported from below by the plurality of support plate portions 223.
  • the plurality of support pins 25 move up and move to a support position above the outer peripheral ring portion 23.
  • the substrate 9 is transferred from the plurality of support plate portions 223 to the plurality of support pins 25.
  • the substrate 9 on the plurality of support pins 25 is received by the transport mechanism that has entered the inside of the chamber 6 via the loading / unloading port, and is transported to the outside.
  • the processing of the substrate 9 in the substrate processing apparatus 1 is completed.
  • the substrate holding unit 2 rotates together with the substrate 9 with the blocking plate 51 placed at the liquid processing position or the drying processing position.
  • the air that has collided with the plurality of supporting portions 22 rotating together with the substrate 9 is not limited to the direction along the upper surface 211 of the holding base 21. It spreads also to the blocking plate 51 side, and large turbulence of the airflow occurs.
  • the width of the processing space 81 in the vertical direction is reduced, or the flow rate of the inert gas into the processing space 81 is increased, thereby suppressing the entry of ambient air into the upper surface 91. It is also possible to do. However, when the width of the processing space 81 is reduced, it is necessary to tighten the allowable range for adjusting the dimensional accuracy and the position of various components, and the manufacturing cost of the apparatus increases. When the flow rate of the inert gas is increased, the running cost increases due to an increase in the amount of the inert gas used. Actually, in any of the above cases, the inflow of the surrounding air into the upper surface 91 due to the turbulence of the airflow generated by the plurality of support portions 22 occurs to some extent.
  • the outer peripheral ring 23 which is an annular plate member surrounding the periphery of the substrate 9 is provided on the substrate holder 2.
  • the inner peripheral edge of the outer peripheral ring portion 23 is close to the outer peripheral edge of the substrate 9, and most of the support portions 22 are covered by the outer peripheral ring portion 23.
  • the air that has collided with each support unit 22 is prevented from spreading to the blocking plate 51 side by the outer peripheral ring unit 23.
  • the turbulence of the air flow near the outer peripheral edge of the substrate 9 can be suppressed (reduced). In other words, the airflow in the vicinity of the outer peripheral edge of the substrate 9 can be rectified by the outer peripheral ring portion 23.
  • the rotation shaft 222 that rotates the contact unit 224 is located radially outside the substrate 9.
  • the rotation shaft 222 necessary for rotation of the contact portion 224 is formed. The influence of the disturbance on the substrate 9 can be reduced. Note that, depending on the design of the substrate holding unit 2, a part of each support portion 22 may be located radially outside the outer peripheral edge of the outer peripheral ring portion 23.
  • the blocking plate 51 rotates at a high speed in a state where the blocking plate 51 is disposed at the liquid processing position or the drying processing position. At this time, a strong air current that jumps out on the upper surface 511 of the blocking plate 51 is generated. The airflow collides with a downward airflow (downward airflow) around the blocking plate 51, and turbulence of the airflow occurs near the outer peripheral edge of the substrate 9. As a result, the atmosphere inside the cup portion (the atmosphere containing the mist of the chemical solution) is diffused, and the upper surface 91 and the lower surface 92 of the substrate 9 may be contaminated.
  • the substrate processing apparatus of the other comparative example when the substrate 9 is subjected to one processing, and another substrate with respect to the substrate 9 is arranged such that the blocking plate 51 is disposed at the liquid processing position and the drying processing position in the substrate processing apparatus 1.
  • the width of the processing space 81 in the vertical direction is made different during the processing, the distance between the upper end of the cup portion and the outer peripheral end surface of the blocking plate 51 varies. In this case, the state of the airflow flowing into the cup portion fluctuates, and the atmosphere inside the cup portion (the atmosphere including the mist of the chemical solution) is diffused, and the upper surface 91 and the lower surface 92 of the substrate 9 may be contaminated. There is.
  • the peripheral wall 52 protruding upward from the outer peripheral edge 513 of the blocking plate 51 is provided. Accordingly, the airflow that jumps out on the upper surface 511 of the blocking plate 51 can be reduced, and the turbulence of the airflow near the outer peripheral edge of the substrate 9 can be suppressed. In other words, the airflow near the outer peripheral edge of the substrate 9 can be rectified. As a result, the diffusion of the atmosphere inside the cup portions (the outer cup portion 42 and the inner cup portion 43) can be suppressed.
  • the height of the peripheral wall portion 52 is preferably 10 mm or more.
  • the upper limit of the height of the peripheral wall 52 may be determined within a range where the weight of the peripheral wall 52 does not become excessively large, and is, for example, 15 mm.
  • the inner peripheral surface 521 of the peripheral wall portion 52 may be inclined with respect to the upper surface 511 of the blocking plate 51 as long as the airflow that jumps outward on the upper surface 511 can be reduced.
  • the cross section of the blocking plate 51 and the peripheral wall portion 52 including the central axis J1 see FIG.
  • the angle formed by the upper surface 511 of the blocking plate 51 and the inner peripheral surface 521 of the peripheral wall portion 52 is, for example, 60 to 120 degrees. , Preferably 75 to 105 degrees.
  • the thickness of the peripheral wall portion 52 may be appropriately determined in consideration of the strength of the material used, the centrifugal force generated by rotation, and the like.
  • the upper end of the cup portion (in the above process example, the outer cup portion 42) radially opposes the peripheral wall portion 52.
  • the minimum width (or the minimum area of the flow path) of the flow path of the airflow toward the inside of the cup portion can be kept constant during the one process and the other process.
  • the state of the airflow flowing into the cup portion can be kept constant while changing the width of the processing space 81 according to the content of the processing on the substrate 9. As a result, it is possible to easily suppress the diffusion of the atmosphere inside the cup portion.
  • the outer peripheral ring portion 23 may be supported by a ring support member 233 different from the support portion 22.
  • the outer peripheral ring portion 23 is preferably supported by the plurality of support portions 22.
  • the rotation shaft 222 a of the support unit 22 overlaps the substrate 9 in a plan view, but the turbulence of the airflow generated by the rotation shaft and the surrounding members causes the substrate 9. From the viewpoint of reducing the influence, it is preferable that the rotation shaft portion be located radially outside the substrate 9.
  • each support portion 22 is covered by the outer peripheral ring portion 23, but the substrate holding portion 2 is designed so that the entire support portion 22 is covered by the outer peripheral ring portion 23. It is also possible. In the substrate processing apparatus 1, at least a part of each support part 22 may be covered by the outer peripheral ring part 23.
  • the outer peripheral ring portion 23 may be substantially annular, and may be partially missing in the circumferential direction depending on the design. From the viewpoint of suppressing the air that has collided with the support portion 22 due to the rotation of the substrate holding portion 2 from spreading to the blocking plate 51, the outer peripheral ring portion 23 includes a portion that spreads forward from the respective support portions 22 in the rotation direction. Is preferred.
  • the entire outer peripheral ring portion 23 is covered with the blocking plate 51.
  • a part of the outer peripheral ring portion 23 is disposed outside the blocking plate 51 in plan view. May be done. That is, at least a part of the outer peripheral ring portion 23 only needs to overlap the blocking plate 51 arranged at the predetermined processing position in a plan view. Thereby, in the vicinity of the outer peripheral edge of the substrate 9, it is possible to suppress the surrounding air from entering the upper surface 91 side.
  • the inner peripheral edge of the outer peripheral ring portion 23 overlaps the blocking plate 51 over the entire periphery.
  • the inner peripheral edge of the outer peripheral ring portion 23 preferably overlaps the holding base 21 over the entire periphery. This makes it possible to suppress the surrounding air from entering the lower surface 92 side in the vicinity of the outer peripheral edge of the substrate 9 over the entire circumference.
  • peripheral wall portion 52 is provided at the outer peripheral edge portion 513 on the upper surface 511 of the blocking plate 51, it may be provided at a position slightly inside (the center axis J1 side) from the outer peripheral end surface of the blocking plate 51. Good.
  • the blocking plate 51 may be rotated together with the substrate holding unit 2 by connecting the blocking plate 51 to the substrate holding unit 2.
  • the support bar 221 of FIG. 3 protrudes above the outer peripheral ring portion 23, and a recess provided on the lower surface 512 of the blocking plate 51 fits into the upper end of the support bar 221 when processing the substrate 9.
  • the blocking plate 51 is placed on the substrate holding unit 2.
  • the substrate rotation mechanism 3 also serves as the blocking plate rotation mechanism 53.
  • a substrate holding portion that sucks and holds the lower surface 92 of the substrate 9 may be employed.
  • the blocking plate rotating mechanism 53 may be omitted.
  • an elevating mechanism that moves the substrate holding unit 2 in the vertical direction with respect to the blocking plate 51 may be provided. That is, the blocking plate 51 may be moved relative to the substrate holding unit 2 in the vertical direction.
  • the substrate processing apparatus 1 only one of the upper surface 91 and the lower surface 92 of the substrate 9 may be processed with the processing liquid.
  • the substrate on which the processing is performed in the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or another substrate. Further, the substrate processing apparatus 1 may be used for processing a substrate having an outer shape different from a disk shape.

Abstract

A substrate processing device (1), comprising a substrate holding part (2), a substrate rotation mechanism (3), and a barrier plate (51). The barrier plate (51) is disposed at a processing position, which is near the upper surface (91) of a substrate (9) when the substrate (9) is being processed. The substrate holding part (2) comprises a holding base (21), a plurality of support parts (22), and an outer periphery ring part (23). The holding base (21) is disposed below the substrate (9). Each of the support parts (22) has a plurality of contact parts (224) which come into contact with the outer peripheral edge of the substrate (9) when the substrate (9) is held, and the support parts (22) are arranged in the peripheral direction on the support base (21). The outer peripheral ring part (23) is an annular plate member surrounding the periphery of the substrate (9) with the inner peripheral edge of the outer peripheral ring part (23) being near the outer peripheral edge of the substrate (9). The outer peripheral ring part (23) covers at least some of each of the support parts (22), and at least some of the outer peripheral ring part (23) overlaps with the barrier plate (51) in plan view. It thereby becomes possible to suppress disturbance of airflow in the vicinity of the outer peripheral edge of the substrate (9).

Description

基板処理装置Substrate processing equipment
　本発明は、基板処理装置に関する。 The present invention relates to a substrate processing apparatus.
　従来、半導体デバイスの製造では、半導体基板（以下、単に「基板」という。）に対して様々な処理を行う基板処理装置が用いられている。例えば、特開２０１６－７２３４３号公報（文献１）では、基板の上面に対向するトッププレート（遮断板）を当該上面に近接した位置に配置しつつ、当該上面に対して薬液処理、洗浄処理、および、乾燥処理を行う基板処理装置が開示されている。また、トッププレートにおいて、円板状の本体部の外周縁から下方に広がる略円筒状の部材を設けることにより、薬液処理後、トッププレートが基板に対してさらに近接した位置へと移動する際に、基板の周囲へと押し出された薬液雰囲気を、下方に向けて案内することが可能となる。 Conventionally, in the manufacture of semiconductor devices, a substrate processing apparatus that performs various processes on a semiconductor substrate (hereinafter, simply referred to as “substrate”) has been used. For example, in Japanese Patent Application Laid-Open No. 2016-72343 (Document 1), while a top plate (blocking plate) facing an upper surface of a substrate is arranged at a position close to the upper surface, a chemical solution treatment, a cleaning process, Further, a substrate processing apparatus for performing a drying process is disclosed. Further, in the top plate, by providing a substantially cylindrical member extending downward from the outer peripheral edge of the disk-shaped main body, when the top plate is moved to a position further closer to the substrate after the chemical solution treatment. In addition, it is possible to guide the chemical solution atmosphere pushed out to the periphery of the substrate downward.
　また、特開平９－３１４０２２号公報では、カップ内で基板を回転させる基板回転保持装置が開示されている。当該装置では、基板を水平姿勢で保持する基板保持部の外周側に円環部が設けられ、当該円環部が、カップの内壁面に向かって水平方向に延びる環状の平坦面を有する。基板および円環部が回転する際には、カップ内壁と円環部の外周端との間の隙間部分の気流の速度が速くなることにより、カップ内のミストの巻き上がりを抑えることが可能となる。特開２０１２－９４８３６号公報の基板処理装置では、スピンチャックに保持された基板を取り囲む環状部材が設けられる。当該環状部材が、基板の上面周縁部を取り囲む上側環状親水面と、基板の下面周縁部を取り囲む下側環状親水面とを有することにより、基板の上面および下面が疎水性である場合であっても、基板の上面全域および下面全域を処理液によって覆うことが可能となる。 特 開 In addition, Japanese Patent Application Laid-Open No. 9-314022 discloses a substrate rotation holding device that rotates a substrate in a cup. In the apparatus, an annular portion is provided on an outer peripheral side of a substrate holding portion that holds the substrate in a horizontal posture, and the annular portion has an annular flat surface extending in a horizontal direction toward an inner wall surface of the cup. When the substrate and the annular portion rotate, the airflow speed in the gap between the inner wall of the cup and the outer peripheral end of the annular portion increases, so that the mist in the cup can be prevented from winding up. Become. In the substrate processing apparatus disclosed in Japanese Patent Application Laid-Open No. 2012-94836, an annular member surrounding the substrate held by the spin chuck is provided. The annular member has an upper annular hydrophilic surface surrounding the peripheral edge of the upper surface of the substrate and a lower annular hydrophilic surface surrounding the peripheral edge of the lower surface of the substrate, so that the upper surface and the lower surface of the substrate are hydrophobic. Also, it is possible to cover the entire upper surface and the lower surface of the substrate with the processing liquid.
　ところで、文献１のように、基板の上面に対向する遮断板を用いる場合、当該上面と遮断板との間に狭い処理空間を形成して、当該上面に対する処理の均一性を向上することが可能となる。一方、基板保持部において、周方向に配列される複数の支持部により基板の外周縁を支持する場合には、基板保持部の回転時に複数の支持部により気流の乱れが発生する。この場合、基板の上面と遮断板との間に周囲の空気が入り込み、処理の均一性が低下してしまう。また、遮断板を基板保持部と同様に回転する場合には、遮断板の上面において外側に飛び出す気流が発生する。この場合、当該気流が、遮断板の周囲において下方に向かう気流と衝突し、基板の外周縁近傍において気流の乱れが発生する。これにより、基板に悪影響が及ぶ場合がある。 By the way, when a blocking plate facing the upper surface of a substrate is used as in Document 1, a narrow processing space can be formed between the upper surface and the blocking plate to improve the uniformity of processing on the upper surface. It becomes. On the other hand, in the case where the outer peripheral edge of the substrate is supported by the plurality of support portions arranged in the circumferential direction in the substrate holding portion, the turbulence of the air flow is generated by the plurality of support portions when the substrate holding portion rotates. In this case, ambient air enters between the upper surface of the substrate and the blocking plate, and the uniformity of processing is reduced. In addition, when the blocking plate is rotated in the same manner as the substrate holding unit, an airflow that jumps out on the upper surface of the blocking plate is generated. In this case, the airflow collides with the downward airflow around the blocking plate, and turbulence of the airflow occurs near the outer peripheral edge of the substrate. This may adversely affect the substrate.
　本発明は、基板処理装置に向けられており、基板の外周縁近傍における気流の乱れを抑制することを目的としている。 The present invention is directed to a substrate processing apparatus, and an object of the present invention is to suppress turbulence of an airflow near an outer peripheral edge of a substrate.
　本発明に係る一の好ましい基板処理装置は、基板を水平状態で保持する基板保持部と、上下方向を向く中心軸を中心として前記基板保持部を回転する基板回転機構と、前記基板の上面に対向する板状であり、前記基板を処理する際に前記上面に近接した処理位置に配置されることにより、前記上面との間で処理空間を形成する遮断板とを備え、前記処理位置において前記遮断板は前記基板の前記上面の全面に対向し、前記基板保持部が、前記基板の下方に配置される保持ベースと、前記基板の保持時に前記基板の外周縁に当接する複数の当接部をそれぞれ有し、前記保持ベース上において周方向に配列される複数の支持部と、内周縁が前記基板の前記外周縁に近接した状態で前記基板の周囲を囲む環状の板部材であり、各支持部の少なくとも一部を覆い、かつ、前記処理位置に配置された前記遮断板と少なくともその一部が平面視において重なる外周リング部とを備える。 One preferred substrate processing apparatus according to the present invention is a substrate holding unit that holds a substrate in a horizontal state, a substrate rotation mechanism that rotates the substrate holding unit around a central axis that faces in a vertical direction, and an upper surface of the substrate. When the substrate is processed, the substrate is disposed at a processing position close to the upper surface, and a shielding plate that forms a processing space between the upper surface and the upper surface. The blocking plate faces the entire upper surface of the substrate, the substrate holding unit includes a holding base disposed below the substrate, and a plurality of abutting portions that abut on an outer peripheral edge of the substrate when holding the substrate. A plurality of support portions arranged in the circumferential direction on the holding base, and an annular plate member surrounding the periphery of the substrate in a state in which an inner peripheral edge is close to the outer peripheral edge of the substrate, At least the support Covers part, and at least a portion with the blocking plate disposed in said processing position and a peripheral ring portion which overlaps in a plan view.
　基板処理装置では、基板の外周縁近傍における気流の乱れを抑制することができる。 In the substrate processing apparatus, it is possible to suppress the turbulence of the air flow near the outer peripheral edge of the substrate.
　本発明の一の好ましい形態では、前記外周リング部の外周縁が、前記各支持部の径方向外側に位置する。 In one preferred embodiment of the present invention, the outer peripheral edge of the outer peripheral ring portion is located radially outward of each of the support portions.
　本発明の他の好ましい形態では、前記各支持部が、当接部を回動する回動軸部を有し、前記回動軸部が、前記基板の径方向外側に位置する。 In another preferred embodiment of the present invention, each of the support portions has a rotation shaft for rotating the contact portion, and the rotation shaft is located radially outside the substrate.
　本発明の他の好ましい形態では、前記外周リング部が、前記複数の支持部により支持される。 In another preferred embodiment of the present invention, the outer peripheral ring portion is supported by the plurality of support portions.
　本発明の他の好ましい形態では、基板処理装置が、前記処理空間に不活性ガスを供給する不活性ガス供給部をさらに備える。 In another preferred embodiment of the present invention, the substrate processing apparatus further includes an inert gas supply unit that supplies an inert gas to the processing space.
　本発明の他の好ましい形態では、基板処理装置が、前記上下方向を向く中心軸を中心として前記遮断板を回転する遮断板回転機構と、前記遮断板の外周縁部から上方に向かって突出する周壁部とをさらに備える。 In another preferred embodiment of the present invention, the substrate processing apparatus includes a blocking plate rotating mechanism configured to rotate the blocking plate around the vertical axis, and protrudes upward from an outer peripheral edge of the blocking plate. And a peripheral wall portion.
　本発明の他の好ましい形態では、前記遮断板および前記基板が円板状であり、前記遮断板の直径が、前記基板の直径以上である。 In another preferred embodiment of the present invention, the blocking plate and the substrate are disc-shaped, and the diameter of the blocking plate is equal to or larger than the diameter of the substrate.
　本発明に係る他の好ましい基板処理装置は、基板を水平状態で保持する基板保持部と、上下方向を向く中心軸を中心として前記基板保持部を回転する基板回転機構と、前記基板の上面に対向する板状であり、前記基板を処理する際に前記上面に近接した処理位置に配置されることにより、前記上面との間で処理空間を形成する遮断板と、前記上下方向を向く中心軸を中心として前記遮断板を回転する遮断板回転機構と、前記遮断板の外周縁部から上方に向かって突出する周壁部とを備える。基板処理装置では、基板の外周縁近傍における気流の乱れを抑制することができる。 Another preferred substrate processing apparatus according to the present invention is a substrate holding unit that holds a substrate in a horizontal state, a substrate rotating mechanism that rotates the substrate holding unit around a central axis that faces in a vertical direction, and an upper surface of the substrate. A blocking plate that is formed in a plate-like shape and that is disposed at a processing position close to the upper surface when processing the substrate, thereby forming a processing space between the substrate and the upper surface; and a central axis that faces the vertical direction. And a peripheral wall portion protruding upward from an outer peripheral edge of the shield plate. In the substrate processing apparatus, it is possible to suppress the turbulence of the air flow near the outer peripheral edge of the substrate.
　本発明の一の好ましい形態では、基板処理装置が、前記遮断板の上方において、下降気流を形成する気流形成部をさらに備える。 In a preferred embodiment of the present invention, the substrate processing apparatus further includes an airflow forming unit that forms a downward airflow above the blocking plate.
　本発明の他の好ましい形態では、基板処理装置が、前記基板の前記上面に処理液を供給する処理液供給部と、前記基板の前記上面から飛散する処理液を受けるカップ部とをさらに備える。 In another preferred embodiment of the present invention, the substrate processing apparatus further includes a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate, and a cup unit that receives the processing liquid scattered from the upper surface of the substrate.
　この場合に、好ましくは、前記遮断板が前記処理位置に配置された際に、前記カップ部の上端が、前記周壁部と近接する。 In this case, preferably, the upper end of the cup portion is close to the peripheral wall portion when the blocking plate is disposed at the processing position.
　前記遮断板が前記処理位置に配置された際に、前記カップ部の上端が、前記周壁部と径方向に対向してもよい。 上端 When the blocking plate is disposed at the processing position, an upper end of the cup portion may radially oppose the peripheral wall portion.
　この場合に、好ましくは、基板処理装置が、前記遮断板を前記基板保持部に対して前記上下方向に相対的に移動する昇降機構をさらに備え、前記基板に対する一の処理時、および、前記基板に対する他の処理時において、前記上下方向における前記処理空間の幅が相違し、前記一の処理時、および、前記他の処理時において、前記カップ部の前記上端が、前記周壁部と前記径方向に対向する。 In this case, preferably, the substrate processing apparatus further includes an elevating mechanism for moving the blocking plate relatively in the up-down direction with respect to the substrate holding unit, and performing one processing on the substrate; and At the time of another processing, the width of the processing space in the vertical direction is different, and at the time of the one processing, and at the time of the other processing, the upper end of the cup portion is in contact with the peripheral wall portion and the radial direction. Oppose.
　本発明の他の好ましい形態では、前記遮断板および前記基板が円板状であり、前記遮断板の直径が、前記基板の直径以上である。 In another preferred embodiment of the present invention, the blocking plate and the substrate are disc-shaped, and the diameter of the blocking plate is equal to or larger than the diameter of the substrate.
　上述の目的および他の目的、特徴、態様および利点は、添付した図面を参照して以下に行うこの発明の詳細な説明により明らかにされる。 The above and other objects, features, aspects and advantages will be made clear by the following detailed description of the present invention with reference to the accompanying drawings.
基板処理装置の構成を示す図である。FIG. 2 is a diagram illustrating a configuration of a substrate processing apparatus. 気液供給ユニットの構成を示す図である。FIG. 3 is a diagram illustrating a configuration of a gas-liquid supply unit. 基板保持部を示す平面図である。It is a top view showing a substrate holding part. 支持部を示す斜視図である。It is a perspective view which shows a support part. 基板処理装置が基板を処理する流れを示す図である。FIG. 3 is a diagram illustrating a flow of processing a substrate by the substrate processing apparatus. 基板処理装置を示す図である。It is a figure showing a substrate processing device. 基板保持部の他の例を示す図である。It is a figure showing other examples of a substrate holding part.
　図１は、本発明の一の実施の形態に係る基板処理装置１の構成を示す図である。基板処理装置１は、円板状の基板９を１枚ずつ処理する枚葉式の装置であり、基板洗浄装置とも呼ばれる。基板処理装置１は、基板保持部２と、基板回転機構３と、カップユニット４１と、カップ昇降機構４４と、遮断板５１と、遮断板回転機構５３と、遮断板昇降機構５４とを備える。基板処理装置１におけるこれらの構成は、箱状のチャンバ６内に収容される。チャンバ６は、およそ密閉された内部空間を形成する。チャンバ６も、基板処理装置１の一部である。 FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to one embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that processes the disk-shaped substrates 9 one by one, and is also called a substrate cleaning apparatus. The substrate processing apparatus 1 includes a substrate holding unit 2, a substrate rotating mechanism 3, a cup unit 41, a cup elevating mechanism 44, a blocking plate 51, a blocking plate rotating mechanism 53, and a blocking plate elevating mechanism 54. These components in the substrate processing apparatus 1 are housed in a box-shaped chamber 6. The chamber 6 forms an approximately closed internal space. The chamber 6 is also a part of the substrate processing apparatus 1.
　基板保持部２は、保持ベース２１と、複数の支持部２２と、外周リング部２３とを備える。保持ベース２１は、上下方向を向く中心軸Ｊ１を中心とする円板状である。複数の支持部２２は、保持ベース２１の上面２１１に設けられる。複数の支持部２２は、中心軸Ｊ１を中心とする円周上において、周方向に等間隔に配置される（後述の図３参照）。基板保持部２が基板９を保持する際には、複数の支持部２２における当接部２２４が、基板９の外周縁に当接する。これにより、基板９が保持ベース２１の上方において水平状態で保持される。基板保持部２により保持された基板９の中心は、中心軸Ｊ１上に位置する。基板９の下方に位置する保持ベース２１の上面２１１と、基板９の下方を向く主面９２（以下、「下面９２」という。）とは、互いに平行であり、両者は隙間を空けて直接的に対向する。支持部２２の個数は任意に決定されてよく、典型的には、３個以上である。複数の支持部２２の詳細、および、外周リング部２３については後述する。 The substrate holding section 2 includes a holding base 21, a plurality of support sections 22, and an outer peripheral ring section 23. The holding base 21 has a disk shape centered on a central axis J1 pointing in the vertical direction. The plurality of support portions 22 are provided on the upper surface 211 of the holding base 21. The plurality of support portions 22 are arranged at equal intervals in the circumferential direction on the circumference around the center axis J1 (see FIG. 3 described later). When the substrate holding part 2 holds the substrate 9, the contact parts 224 of the plurality of support parts 22 contact the outer peripheral edge of the substrate 9. Thereby, the substrate 9 is held in a horizontal state above the holding base 21. The center of the substrate 9 held by the substrate holding unit 2 is located on the central axis J1. An upper surface 211 of the holding base 21 located below the substrate 9 and a main surface 92 (hereinafter, referred to as a “lower surface 92”) facing the lower side of the substrate 9 are parallel to each other, and are directly separated by a gap. Oppose. The number of the support portions 22 may be arbitrarily determined, and is typically three or more. The details of the plurality of support portions 22 and the outer peripheral ring portion 23 will be described later.
　保持ベース２１の下面の中央には、中心軸Ｊ１を中心とするシャフト部３１の上端が固定される。モータを有する基板回転機構３が、シャフト部３１の下端部を回転することにより、基板保持部２が基板９と共に中心軸Ｊ１を中心として回転する。保持ベース２１およびシャフト部３１には、上下方向に延びる中空部が中心軸Ｊ１上に設けられており、下部ノズル７２が当該中空部内に配置される。下部ノズル７２は、上下方向に延びており、下部ノズル７２の上端面は、保持ベース２１の上面２１１近傍に配置される。下部ノズル７２は、基板９の下面９２側に位置する。下部ノズル７２は、保持ベース２１の中央部に位置し、基板９の下面９２の中央部に直接的に対向する。 上端 At the center of the lower surface of the holding base 21, the upper end of the shaft portion 31 about the center axis J1 is fixed. When the substrate rotating mechanism 3 having a motor rotates the lower end of the shaft 31, the substrate holding unit 2 rotates about the central axis J <b> 1 together with the substrate 9. In the holding base 21 and the shaft portion 31, a hollow portion extending in the vertical direction is provided on the central axis J1, and the lower nozzle 72 is disposed in the hollow portion. The lower nozzle 72 extends vertically, and the upper end surface of the lower nozzle 72 is arranged near the upper surface 211 of the holding base 21. The lower nozzle 72 is located on the lower surface 92 side of the substrate 9. The lower nozzle 72 is located at the center of the holding base 21 and directly faces the center of the lower surface 92 of the substrate 9.
　カップユニット４１は、外側カップ部４２と、内側カップ部４３とを備える。外側カップ部４２および内側カップ部４３は、共に中心軸Ｊ１を中心とする略筒状である。内側カップ部４３は、保持ベース２１の周囲を囲み、外側カップ部４２は、内側カップ部４３の周囲を囲む。外側カップ部４２および内側カップ部４３のそれぞれは、上方に向かうに従って直径が漸次減少するカップ上部４２１，４３１を有する。外側カップ部４２の上端は、カップ上部４２１の上端であり、内側カップ部４３の上端は、カップ上部４３１の上端である。外側カップ部４２の上端、および、内側カップ部４３の上端は、いずれも円環状である。 The cup unit 41 includes an outer cup portion 42 and an inner cup portion 43. The outer cup part 42 and the inner cup part 43 are both substantially cylindrical with the center axis J1 as the center. The inner cup 43 surrounds the periphery of the holding base 21, and the outer cup 42 surrounds the periphery of the inner cup 43. Each of the outer cup portion 42 and the inner cup portion 43 has a cup upper portion 421, 431 whose diameter gradually decreases upward. The upper end of the outer cup portion 42 is the upper end of the cup upper portion 421, and the upper end of the inner cup portion 43 is the upper end of the cup upper portion 431. The upper end of the outer cup portion 42 and the upper end of the inner cup portion 43 are both annular.
　カップ昇降機構４４は、例えば、モータおよびボールねじを備え、外側カップ部４２および内側カップ部４３のそれぞれを上下方向に移動する。例えば、外側カップ部４２は、所定の上位置または下位置に選択的に配置され、内側カップ部４３も、所定の上位置または下位置に選択的に配置される。図１に示すように、外側カップ部４２を上位置に配置し、内側カップ部４３を下位置に配置した状態では、外側カップ部４２のカップ上部４２１が、基板保持部２上の基板９に対して中心軸Ｊ１を中心とする径方向に対向する。外側カップ部４２を上位置に配置し、内側カップ部４３も上位置に配置した状態では、内側カップ部４３のカップ上部４３１が、基板９に対して径方向に対向する。後述する基板９の処理では、基板９の外周縁から飛散する各種処理液が、外側カップ部４２の内周面、または、内側カップ部４３の内周面により受けられる。当該処理液は、各カップ部４２，４３の底部に設けられた排出管（図示省略）を介して回収される。なお、排出管は、気液排出部に接続されており、ガスおよび液体の外部への排出が可能である。 The cup lifting mechanism 44 includes, for example, a motor and a ball screw, and moves the outer cup 42 and the inner cup 43 in the vertical direction. For example, the outer cup portion 42 is selectively disposed at a predetermined upper position or a lower position, and the inner cup portion 43 is also selectively disposed at a predetermined upper position or a lower position. As shown in FIG. 1, in a state where the outer cup portion 42 is arranged at the upper position and the inner cup portion 43 is arranged at the lower position, the cup upper portion 421 of the outer cup portion 42 is attached to the substrate 9 on the substrate holding portion 2. On the other hand, they face each other in the radial direction about the center axis J1. In a state where the outer cup portion 42 is disposed at the upper position and the inner cup portion 43 is also disposed at the upper position, the cup upper portion 431 of the inner cup portion 43 faces the substrate 9 in the radial direction. In the processing of the substrate 9 described later, various processing liquids scattered from the outer peripheral edge of the substrate 9 are received by the inner peripheral surface of the outer cup portion 42 or the inner peripheral surface of the inner cup portion 43. The processing liquid is collected via a discharge pipe (not shown) provided at the bottom of each of the cups 42 and 43. In addition, the discharge pipe is connected to the gas-liquid discharge part, and can discharge gas and liquid to the outside.
　基板処理装置１に対する基板９の搬入搬出時には、内側カップ部４３が下位置に配置され、外側カップ部４２も下位置に配置される。これにより、内側カップ部４３の上端、および、外側カップ部４２の上端が、基板保持部２上の基板９よりも下方に配置され、外部の搬送機構と干渉することが防止される。外側カップ部４２および内側カップ部４３は、上位置および下位置以外の位置に配置可能であってもよい。 (4) When the substrate 9 is loaded into and unloaded from the substrate processing apparatus 1, the inner cup portion 43 is disposed at the lower position, and the outer cup portion 42 is also disposed at the lower position. Thereby, the upper end of the inner cup portion 43 and the upper end of the outer cup portion 42 are arranged below the substrate 9 on the substrate holding portion 2, and are prevented from interfering with an external transport mechanism. The outer cup part 42 and the inner cup part 43 may be arrangeable at positions other than the upper position and the lower position.
　遮断板５１は、中心軸Ｊ１を中心とする円板状である。遮断板５１は、基板保持部２の上方に配置される。遮断板５１の下面５１２は、基板保持部２上の基板９の上方を向く主面９１（以下、「上面９１」という。）と上下方向に対向する。遮断板５１の下面５１２は、基板９の上面９１と平行である。遮断板５１の直径は、基板９の直径以上であり、基板９の上面９１の全体が遮断板５１により覆われる。図１の例では、遮断板５１の直径は、保持ベース２１の直径と同じ、または、保持ベース２１の直径よりも僅かに大きい。したがって、遮断板５１は、保持ベース２１の全体を覆う。基板処理装置１の設計によっては、遮断板５１の直径が、保持ベース２１の直径未満であってもよい。 The blocking plate 51 has a disk shape centered on the central axis J1. The blocking plate 51 is arranged above the substrate holding unit 2. The lower surface 512 of the blocking plate 51 vertically opposes a main surface 91 (hereinafter, referred to as “upper surface 91”) of the substrate holding unit 2 that faces upward of the substrate 9. The lower surface 512 of the blocking plate 51 is parallel to the upper surface 91 of the substrate 9. The diameter of the blocking plate 51 is equal to or larger than the diameter of the substrate 9, and the entire upper surface 91 of the substrate 9 is covered by the blocking plate 51. In the example of FIG. 1, the diameter of the blocking plate 51 is the same as or slightly larger than the diameter of the holding base 21. Therefore, the blocking plate 51 covers the entire holding base 21. Depending on the design of the substrate processing apparatus 1, the diameter of the blocking plate 51 may be smaller than the diameter of the holding base 21.
　遮断板５１において、基板９とは反対側を向く上面５１１は、中心軸Ｊ１に対して略垂直に広がる。遮断板５１の上面５１１も、基板９の上面９１と平行である。遮断板５１の上面５１１における外周縁部５１３には、上方に向かって突出する周壁部５２が設けられる。周壁部５２は、当該上面５１１から円筒状に突出する。周壁部５２は、内周面５２１と、外周面５２２とを備える。本実施の形態では、内周面５２１および外周面５２２は共に、中心軸Ｊ１を中心とする円筒面である。図１に示すように、中心軸Ｊ１を含む面における遮断板５１の断面では、周壁部５２の内周面５２１は、遮断板５１の上面５１１と略垂直となる。また、周壁部５２の外周面５２２も、遮断板５１に対して略垂直となる。図１の例では、周壁部５２の外周面５２２、および、遮断板５１の外周端面は、中心軸Ｊ１を中心とする同一の円筒面に含まれる。 上面 In the blocking plate 51, the upper surface 511 facing the side opposite to the substrate 9 spreads substantially perpendicularly to the central axis J1. The upper surface 511 of the blocking plate 51 is also parallel to the upper surface 91 of the substrate 9. An outer peripheral edge 513 on the upper surface 511 of the blocking plate 51 is provided with a peripheral wall 52 protruding upward. The peripheral wall portion 52 projects from the upper surface 511 in a cylindrical shape. The peripheral wall portion 52 includes an inner peripheral surface 521 and an outer peripheral surface 522. In the present embodiment, both the inner peripheral surface 521 and the outer peripheral surface 522 are cylindrical surfaces centered on the central axis J1. As shown in FIG. 1, in the cross section of the shielding plate 51 on a plane including the central axis J <b> 1, the inner peripheral surface 521 of the peripheral wall portion 52 is substantially perpendicular to the upper surface 511 of the shielding plate 51. The outer peripheral surface 522 of the peripheral wall portion 52 is also substantially perpendicular to the blocking plate 51. In the example of FIG. 1, the outer peripheral surface 522 of the peripheral wall portion 52 and the outer peripheral end surface of the blocking plate 51 are included in the same cylindrical surface centered on the central axis J1.
　遮断板５１の上面５１１の中央には、中心軸Ｊ１を中心とするシャフト部５３１の下端が固定される。モータを有する遮断板回転機構５３が、シャフト部５３１の上端部を回転することにより、遮断板５１が中心軸Ｊ１を中心として回転する。遮断板回転機構５３による遮断板５１の回転は、基板回転機構３による基板９の回転とは独立して行われる。遮断板５１およびシャフト部５３１には、上下方向に延びる中空部が中心軸Ｊ１上に設けられており、上部ノズル７１が当該中空部内に配置される。上部ノズル７１は、上下方向に延びており、上部ノズル７１の下端面は、遮断板５１の下面５１２近傍に配置される。上部ノズル７１は、基板９の上面９１側に位置する。上部ノズル７１は、遮断板５１の下面５１２の中央部に位置し、基板９の上面９１の中央部に直接的に対向する。 下端 At the center of the upper surface 511 of the blocking plate 51, the lower end of the shaft portion 531 around the central axis J1 is fixed. The blocking plate rotating mechanism 53 having a motor rotates the upper end of the shaft portion 531 so that the blocking plate 51 rotates about the central axis J1. The rotation of the blocking plate 51 by the blocking plate rotating mechanism 53 is performed independently of the rotation of the substrate 9 by the substrate rotating mechanism 3. In the blocking plate 51 and the shaft portion 531, a hollow portion extending in the vertical direction is provided on the central axis J1, and the upper nozzle 71 is disposed in the hollow portion. The upper nozzle 71 extends in the up-down direction, and the lower end surface of the upper nozzle 71 is arranged near the lower surface 512 of the blocking plate 51. The upper nozzle 71 is located on the upper surface 91 side of the substrate 9. The upper nozzle 71 is located at the center of the lower surface 512 of the blocking plate 51 and directly faces the center of the upper surface 91 of the substrate 9.
　遮断板昇降機構５４は、例えば、モータおよびボールねじを備え、遮断板５１を遮断板回転機構５３と共に上下方向に移動する。基板９の処理時には、遮断板５１が、基板９の上面９１に近接した処理位置（図１および後述の図６参照）に配置され、遮断板５１の下面５１２と基板９の上面９１との間に、上下方向の幅が微小な空間８１（以下、「処理空間８１」という。）が形成される。基板処理装置１に対する基板９の搬入搬出時には、図１中に二点鎖線で示すように、遮断板５１が、基板９の上面９１から離間した離間位置に配置され、外部の搬送機構と干渉することが防止される。 The blocking plate lifting / lowering mechanism 54 includes, for example, a motor and a ball screw, and moves the blocking plate 51 together with the blocking plate rotating mechanism 53 in the vertical direction. At the time of processing the substrate 9, the blocking plate 51 is disposed at a processing position close to the upper surface 91 of the substrate 9 (see FIG. 1 and FIG. 6 described later), and the lower surface 512 of the blocking plate 51 and the upper surface 91 of the substrate 9 are disposed. In addition, a space 81 having a small width in the vertical direction (hereinafter, referred to as “processing space 81”) is formed. When the substrate 9 is loaded into and unloaded from the substrate processing apparatus 1, as shown by a two-dot chain line in FIG. 1, the blocking plate 51 is arranged at a position separated from the upper surface 91 of the substrate 9 and interferes with an external transport mechanism. Is prevented.
　チャンバ６の蓋部には、気流形成部６１が取り付けられる。気流形成部６１は、遮断板５１およびカップユニット４１の上方に設けられる。気流形成部６１は、例えばファンフィルタユニット（ＦＦＵ）であり、ファン６１１と、フィルタ６１２とを有する。ファン６１１は、チャンバ６外の空気をフィルタ６１２を介してチャンバ６内に送る。フィルタ６１２は、例えばＨＥＰＡフィルタであり、空気中のパーティクルを除去する。気流形成部６１により、チャンバ６内において上部から下方に向かうガス（ここでは、清浄空気）の流れ、すなわち、下降気流が、遮断板５１の上方において形成される。気流形成部６１では、窒素ガス等により下降気流が形成されてもよい。チャンバ６の下部には、排気管（図示省略）が設けられており、チャンバ６内のガスは、排気管を介してチャンバ６外に排出される。後述する基板９の処理では、一定の流量の下降気流が常時形成される。 気 An airflow forming unit 61 is attached to the lid of the chamber 6. The airflow forming part 61 is provided above the blocking plate 51 and the cup unit 41. The airflow forming unit 61 is, for example, a fan filter unit (FFU), and includes a fan 611 and a filter 612. The fan 611 sends air outside the chamber 6 into the chamber 6 via the filter 612. The filter 612 is, for example, a HEPA filter and removes particles in the air. The flow of gas (here, clean air) flowing downward from above in the chamber 6, that is, a descending airflow is formed by the airflow forming unit 61 above the blocking plate 51. In the airflow forming section 61, a downward airflow may be formed by nitrogen gas or the like. An exhaust pipe (not shown) is provided below the chamber 6, and gas in the chamber 6 is exhausted outside the chamber 6 via the exhaust pipe. In the processing of the substrate 9 described later, a constant downflow airflow is always formed.
　図２は、基板処理装置１が備える気液供給ユニット７の構成を示す図である。図２では、基板処理装置１における全体制御を担う制御部１０も示している。制御部１０は、コンピュータが所定のプログラムを実行することにより実現される。制御部１０は、専用の電気回路により構築されてもよく、部分的に専用の電気回路が利用されてもよい。 FIG. 2 is a diagram showing a configuration of the gas-liquid supply unit 7 provided in the substrate processing apparatus 1. FIG. 2 also shows a control unit 10 that performs overall control in the substrate processing apparatus 1. The control unit 10 is realized by a computer executing a predetermined program. The control unit 10 may be configured by a dedicated electric circuit, or a dedicated electric circuit may be partially used.
　気液供給ユニット７は、上面処理液供給部７３と、下面処理液供給部７４と、不活性ガス供給部７５とを備える。上面処理液供給部７３は、既述の上部ノズル７１と、薬液供給源７３１と、ＩＰＡ供給源７３２と、純水供給源７３３とを備える。上部ノズル７１の下端面には、処理液吐出口７１１と、ガス噴出口７１２とが形成される。図２の例では、上部ノズル７１の下端面の中央に処理液吐出口７１１が設けられ、処理液吐出口７１１の周囲に、略環状のガス噴出口７１２が設けられる。 The gas-liquid supply unit 7 includes an upper processing liquid supply unit 73, a lower processing liquid supply unit 74, and an inert gas supply unit 75. The upper surface processing liquid supply unit 73 includes the above-described upper nozzle 71, a chemical liquid supply source 731, an IPA supply source 732, and a pure water supply source 733. On the lower end surface of the upper nozzle 71, a processing liquid ejection port 711 and a gas ejection port 712 are formed. In the example of FIG. 2, a processing liquid discharge port 711 is provided at the center of the lower end surface of the upper nozzle 71, and a substantially annular gas outlet 712 is provided around the processing liquid discharge port 711.
　上部ノズル７１において、処理液吐出口７１１に連通する処理液流路には、薬液供給源７３１、ＩＰＡ供給源７３２および純水供給源７３３が、弁を介して接続される。薬液供給源７３１から上部ノズル７１の処理液流路に薬液が供給されることにより、処理液吐出口７１１から基板９の上面９１の中央部に向けて薬液が吐出される。薬液は、例えば、フッ酸や水酸化テトラメチルアンモニウム水溶液等のエッチング液である。同様に、ＩＰＡ供給源７３２から上部ノズル７１の処理液流路にＩＰＡ（イソプロピルアルコール）が供給されることにより、処理液吐出口７１１から上面９１の中央部に向けてＩＰＡが吐出される。また、純水供給源７３３から上部ノズル７１の処理液流路に純水が供給されることにより、処理液吐出口７１１から上面９１の中央部に向けて純水が吐出される。上面処理液供給部７３では、他の種類の処理液が上面９１に供給されてもよい。 薬 In the upper nozzle 71, a chemical liquid supply source 731, an IPA supply source 732, and a pure water supply source 733 are connected to the processing liquid flow path communicating with the processing liquid discharge port 711 via a valve. When the chemical is supplied from the chemical supply source 731 to the processing liquid flow path of the upper nozzle 71, the chemical is discharged from the processing liquid discharge port 711 toward the center of the upper surface 91 of the substrate 9. The chemical is, for example, an etchant such as hydrofluoric acid or an aqueous solution of tetramethylammonium hydroxide. Similarly, by supplying IPA (isopropyl alcohol) from the IPA supply source 732 to the processing liquid flow path of the upper nozzle 71, IPA is discharged from the processing liquid discharge port 711 toward the center of the upper surface 91. Further, when pure water is supplied from the pure water supply source 733 to the processing liquid flow path of the upper nozzle 71, the pure water is discharged from the processing liquid discharge port 711 toward the center of the upper surface 91. In the upper surface processing liquid supply unit 73, another type of processing liquid may be supplied to the upper surface 91.
　不活性ガス供給部７５は、既述の上部ノズル７１と、不活性ガス供給源７５１とを備える。上部ノズル７１において、ガス噴出口７１２に連通するガス流路には、不活性ガス供給源７５１が弁を介して接続される。不活性ガス供給源７５１から上部ノズル７１のガス流路に不活性ガスが供給されることにより、遮断板５１と基板９との間の処理空間８１に向けてガス噴出口７１２から不活性ガスが噴出される。不活性ガスは、基板９自体、および、基板９に形成された薄膜との反応性に乏しいガスであり、例えば窒素ガス、アルゴンガス、ヘリウムガス等である。本実施の形態では、窒素ガスが不活性ガスとして処理空間８１に供給される。上面処理液供給部７３および不活性ガス供給部７５では、上部ノズル７１が共有されている。 The inert gas supply unit 75 includes the above-described upper nozzle 71 and an inert gas supply source 751. In the upper nozzle 71, an inert gas supply source 751 is connected to a gas passage communicating with the gas ejection port 712 via a valve. By supplying the inert gas from the inert gas supply source 751 to the gas flow path of the upper nozzle 71, the inert gas is supplied from the gas ejection port 712 toward the processing space 81 between the blocking plate 51 and the substrate 9. It is gushing. The inert gas is a gas having poor reactivity with the substrate 9 itself and the thin film formed on the substrate 9, and is, for example, a nitrogen gas, an argon gas, a helium gas, or the like. In the present embodiment, nitrogen gas is supplied to the processing space 81 as an inert gas. The upper processing liquid supply unit 73 and the inert gas supply unit 75 share the upper nozzle 71.
　下面処理液供給部７４は、既述の下部ノズル７２と、純水供給源７３３とを備える。下部ノズル７２には、純水供給源７３３が弁を介して接続される。純水供給源７３３から下部ノズル７２に純水が供給されることにより、下部ノズル７２から基板９の下面９２の中央部に向けて純水が吐出される。上面処理液供給部７３および下面処理液供給部７４では、純水供給源７３３が共有されている。下面処理液供給部７４では、他の種類の処理液が下面９２に供給されてもよい。 The lower surface treatment liquid supply unit 74 includes the lower nozzle 72 described above and a pure water supply source 733. A pure water supply source 733 is connected to the lower nozzle 72 via a valve. By supplying pure water from the pure water supply source 733 to the lower nozzle 72, the pure water is discharged from the lower nozzle 72 toward the center of the lower surface 92 of the substrate 9. The upper surface processing liquid supply unit 73 and the lower surface processing liquid supply unit 74 share a pure water supply source 733. In the lower surface processing liquid supply unit 74, another type of processing liquid may be supplied to the lower surface 92.
　図３は、基板保持部２を示す平面図であり、図４は、１つの支持部２２を示す斜視図である。既述のように、保持ベース２１上には、複数の支持部２２が周方向に等間隔に配列される。図３および図４に示すように、各支持部２２は、支持棒２２１と、回動軸部２２２と、支持板部２２３と、当接部２２４とを備える。保持ベース２１の上面２１１の外周縁部には、複数の有底の穴部が周方向に等間隔に設けられる。上下方向に垂直な穴部の断面形状は、円形である。上下方向に延びる支持棒２２１は、穴部の中央に配置され、支持棒２２１の下端部は、穴部の底部に固定される。図４では、保持ベース２１の図示を省略している。回動軸部２２２は、円筒状の中空部材であり、支持棒２２１に嵌め込まれて、保持ベース２１の穴部内に配置される。回動軸部２２２の内径は、支持棒２２１の直径よりも僅かに大きく、回動軸部２２２の外径は、穴部の直径よりも僅かに小さい。回動軸部２２２は、支持棒２２１および穴部により、支持棒２２１を中心として回動可能に支持される。ベアリング等を用いて、回動軸部２２２が回動可能に支持されてもよい。 FIG. 3 is a plan view showing the substrate holding unit 2, and FIG. 4 is a perspective view showing one support unit 22. As described above, a plurality of support portions 22 are arranged on the holding base 21 at equal intervals in the circumferential direction. As shown in FIGS. 3 and 4, each support portion 22 includes a support rod 221, a rotating shaft portion 222, a support plate portion 223, and a contact portion 224. At the outer peripheral edge of the upper surface 211 of the holding base 21, a plurality of bottomed holes are provided at equal intervals in the circumferential direction. The cross-sectional shape of the hole perpendicular to the vertical direction is circular. The support bar 221 extending in the vertical direction is arranged at the center of the hole, and the lower end of the support bar 221 is fixed to the bottom of the hole. In FIG. 4, illustration of the holding base 21 is omitted. The rotation shaft 222 is a hollow member having a cylindrical shape, is fitted into the support rod 221, and is disposed in a hole of the holding base 21. The inner diameter of the rotation shaft 222 is slightly larger than the diameter of the support rod 221, and the outer diameter of the rotation shaft 222 is slightly smaller than the diameter of the hole. The rotation shaft 222 is supported by the support rod 221 and the hole so as to be rotatable about the support rod 221. The rotation shaft 222 may be rotatably supported using a bearing or the like.
　支持板部２２３は、保持ベース２１の上面２１１に沿って、回動軸部２２２から水平方向に延びる板状部材である。支持板部２２３の下面は、保持ベース２１の上面２１１に近接する。支持板部２２３の大部分は、後述の外周リング部２３と、保持ベース２１の上面２１１との間に配置される。図３の例では、支持板部２２３は、回動軸部２２２から離れるに従って水平方向の幅が狭くなる楔形状である。支持板部２２３は、周方向におよそ沿うとともに、回動軸部２２２から離れるに従って径方向の内側に向かう。当接部２２４は、支持板部２２３の上面に設けられる突起部である。当接部２２４は、回動軸部２２２から離れた位置に設けられる。 The support plate 223 is a plate-like member that extends horizontally from the rotation shaft 222 along the upper surface 211 of the holding base 21. The lower surface of the support plate 223 is close to the upper surface 211 of the holding base 21. Most of the support plate portion 223 is disposed between an outer peripheral ring portion 23 described later and an upper surface 211 of the holding base 21. In the example of FIG. 3, the support plate portion 223 has a wedge shape in which the width in the horizontal direction decreases as the distance from the rotation shaft portion 222 increases. The support plate portion 223 extends substantially in the circumferential direction, and moves radially inward as the distance from the rotation shaft portion 222 increases. The contact portion 224 is a projection provided on the upper surface of the support plate 223. The contact portion 224 is provided at a position separated from the rotation shaft portion 222.
　図１に示すように、基板保持部２は、リング部２４１と、伝達機構２４２とをさらに備える。中心軸Ｊ１を中心とするリング部２４１は、保持ベース２１の下方に配置され、図示省略のガイド部により上下方向に移動可能に支持される。伝達機構２４２は、リング部２４１と複数の支持部２２の回動軸部２２２とを連結するリンク機構であり、保持ベース２１の内部および下方に設けられる。伝達機構２４２は、リング部２４１の上下方向の移動に連動して、回動軸部２２２を回動する。基板９の回転時には、リング部２４１および伝達機構２４２は、保持ベース２１と共に中心軸Ｊ１を中心として回転する。 基板 As shown in FIG. 1, the substrate holding unit 2 further includes a ring 241 and a transmission mechanism 242. The ring portion 241 about the center axis J1 is disposed below the holding base 21, and is supported by a guide portion (not shown) so as to be movable in the vertical direction. The transmission mechanism 242 is a link mechanism that connects the ring part 241 and the rotating shaft parts 222 of the plurality of support parts 22, and is provided inside and below the holding base 21. The transmission mechanism 242 rotates the rotation shaft 222 in conjunction with the vertical movement of the ring 241. When the substrate 9 rotates, the ring portion 241 and the transmission mechanism 242 rotate about the central axis J1 together with the holding base 21.
　伝達機構２４２の下方には、リング昇降機構２９が設けられる。リング昇降機構２９は、例えば、モータおよびボールねじを備え、モータの回転によりボールねじにおける移動体（ナット）を上下方向に移動する。リング部２４１は、ベアリングの内輪に挿入されており、当該ベアリングの外輪には、リング昇降機構２９の移動体が固定される。これにより、リング部２４１が中心軸Ｊ１を中心として回転可能な状態で、リング昇降機構２９によるリング部２４１の上下方向への移動が可能となる。リング昇降機構２９のモータは、基板回転機構３を収容するケースに固定される。 リ ン グ A ring lifting mechanism 29 is provided below the transmission mechanism 242. The ring elevating mechanism 29 includes, for example, a motor and a ball screw, and moves a moving body (nut) in the ball screw up and down by rotation of the motor. The ring part 241 is inserted into the inner ring of the bearing, and the moving body of the ring elevating mechanism 29 is fixed to the outer ring of the bearing. This allows the ring elevating mechanism 29 to move the ring 241 in the vertical direction while the ring 241 is rotatable about the central axis J1. The motor of the ring elevating mechanism 29 is fixed to a case that houses the substrate rotating mechanism 3.
　例えば、リング昇降機構２９がリング部２４１を上下方向における第１の位置に配置することにより、図３中に二点鎖線で示すように、複数の支持部２２における当接部２２４が、基板９の外周縁に当接する。すなわち、複数の当接部２２４が保持位置に配置され、基板保持部２において基板９が保持される。リング昇降機構２９がリング部２４１を上下方向における第２の位置へと移動することにより、各当接部２２４が基板９の外周縁から離れるように回動軸部２２２が回動し、複数の当接部２２４が図３中に実線で示す解除位置に配置される。これにより、基板保持部２における基板９の保持が解除される。図３の例では、複数の当接部２２４が基板９の外周縁から離間して、基板９の保持が解除された状態においても、複数の支持部２２における支持板部２２３により、基板９が下方から支持される。支持部２２の構造、および、回動軸部２２２を回動するための上記機構は一例に過ぎず、適宜変更されてよい。 For example, when the ring elevating mechanism 29 arranges the ring portion 241 at the first position in the vertical direction, as shown by a two-dot chain line in FIG. Abuts the outer peripheral edge of That is, the plurality of contact portions 224 are arranged at the holding positions, and the substrate 9 is held by the substrate holding portion 2. When the ring lifting / lowering mechanism 29 moves the ring portion 241 to the second position in the vertical direction, the rotating shaft portion 222 rotates so that each contact portion 224 separates from the outer peripheral edge of the substrate 9, The contact portion 224 is disposed at a release position indicated by a solid line in FIG. Thereby, the holding of the substrate 9 in the substrate holding unit 2 is released. In the example of FIG. 3, even when the plurality of abutting portions 224 are separated from the outer peripheral edge of the substrate 9 and the holding of the substrate 9 is released, the substrate 9 is supported by the supporting plate portions 223 of the plurality of supporting portions 22. Supported from below. The structure of the support portion 22 and the above-described mechanism for rotating the rotating shaft portion 222 are merely examples, and may be appropriately changed.
　基板保持部２は、複数の支持ピン２５をさらに備える。保持ベース２１の上面２１１には、他の複数の穴部が周方向に等間隔に設けられており、複数の支持ピン２５は当該複数の穴部内にそれぞれ配置される。複数の支持ピン２５は、周方向に等間隔に配列される。図３の例では、各支持ピン２５は、周方向において互いに隣接する２つの支持部２２の間に配置される。径方向における複数の支持ピン２５の位置は、保持位置に配置される複数の当接部２２４よりも僅かに中心軸Ｊ１側である。すなわち、複数の支持ピン２５は、基板９の外周縁よりも僅かに中心軸Ｊ１側に位置する。例えば、複数の支持ピン２５の下端は、中心軸Ｊ１を中心とする他のリング部（図示省略）に固定される。当該他のリング部は、上記リング部２４１およびリング昇降機構２９と同様に、他のリング昇降機構（図示省略）の移動体にベアリングを介して接続される。これにより、当該他のリング部が中心軸Ｊ１を中心として回転可能な状態で、当該他のリング昇降機構による当該他のリング部の上下方向への移動が可能となる。当該他のリング昇降機構のモータは、基板回転機構３を収容するケースに固定される。 The substrate holding unit 2 further includes a plurality of support pins 25. On the upper surface 211 of the holding base 21, another plurality of holes are provided at equal intervals in the circumferential direction, and the plurality of support pins 25 are respectively disposed in the plurality of holes. The plurality of support pins 25 are arranged at regular intervals in the circumferential direction. In the example of FIG. 3, each support pin 25 is arranged between two support portions 22 adjacent to each other in the circumferential direction. The positions of the plurality of support pins 25 in the radial direction are slightly closer to the center axis J1 than the plurality of contact portions 224 arranged at the holding position. That is, the plurality of support pins 25 are located slightly closer to the center axis J1 than the outer peripheral edge of the substrate 9. For example, the lower ends of the plurality of support pins 25 are fixed to another ring portion (not shown) centered on the central axis J1. The other ring part is connected to a moving body of another ring elevating mechanism (not shown) via a bearing, similarly to the ring part 241 and the ring elevating mechanism 29. This allows the other ring portion to move up and down by the other ring lifting mechanism while the other ring portion is rotatable about the central axis J1. The motor of the other ring elevating mechanism is fixed to a case accommodating the substrate rotating mechanism 3.
　例えば、当該他のリング昇降機構が当該他のリング部を上下方向における第１の位置に配置することにより、複数の支持ピン２５の上端が、保持ベース２１の上面２１１と同じ、または、上面２１１よりも下方となる待機位置に配置される。当該他のリング昇降機構が当該他のリング部を上下方向における第２の位置に配置することにより、複数の支持ピン２５の上端が、複数の当接部２２４の上端よりも上方となる支持位置に配置される。 For example, the other ring elevating mechanism arranges the other ring portion at the first position in the vertical direction so that the upper ends of the plurality of support pins 25 are the same as the upper surface 211 of the holding base 21 or the upper surface 211. It is arranged at a standby position lower than the above. A support position where the upper ends of the plurality of support pins 25 are higher than the upper ends of the plurality of contact portions 224 by the other ring elevating mechanism arranging the other ring portion at the second position in the vertical direction. Placed in
　図３に示すように、外周リング部２３は、保持ベース２１の外周縁部の上方に配置される環状の板部材である。好ましい外周リング部２３は、中心軸Ｊ１を中心とする略円環状であり、全周に亘って連続する。外周リング部２３は、複数の支持部２２における支持棒２２１の上端部に接続され、保持ベース２１に対して固定される。すなわち、外周リング部２３は、複数の支持部２２により支持される。図４では、外周リング部２３を二点鎖線で示している。外周リング部２３の内周縁には、各支持部２２の当接部２２４（解除位置に配置された当接部２２４）との接触を避ける切欠部２３２が形成される。外周リング部２３の内径は、基板９の直径よりも僅かに大きい。外周リング部２３の内周縁は、基板保持部２において保持される基板９の外側にて、当該基板９の外周縁に近接する。外周リング部２３の内周縁（切欠部２３２を除く。）と基板９の外周縁との間の径方向の距離は、例えば０．５～２．０ｍｍである。 外 周 As shown in FIG. 3, the outer peripheral ring portion 23 is an annular plate member disposed above the outer peripheral edge of the holding base 21. The preferable outer peripheral ring portion 23 has a substantially annular shape centered on the central axis J1 and is continuous over the entire circumference. The outer peripheral ring portion 23 is connected to the upper end of the support bar 221 in the plurality of support portions 22 and is fixed to the holding base 21. That is, the outer ring portion 23 is supported by the plurality of support portions 22. In FIG. 4, the outer peripheral ring portion 23 is indicated by a two-dot chain line. A cutout portion 232 is formed on the inner peripheral edge of the outer peripheral ring portion 23 to avoid contact with the contact portion 224 of each support portion 22 (the contact portion 224 arranged at the release position). The inner diameter of the outer peripheral ring portion 23 is slightly larger than the diameter of the substrate 9. The inner peripheral edge of the outer peripheral ring portion 23 is close to the outer peripheral edge of the substrate 9 outside the substrate 9 held by the substrate holding portion 2. The radial distance between the inner peripheral edge of the outer peripheral ring portion 23 (excluding the cutout portion 232) and the outer peripheral edge of the substrate 9 is, for example, 0.5 to 2.0 mm.
　外周リング部２３の外周縁は、各支持部２２の径方向外側に位置する。各支持部２２の大部分、詳細には、支持部２２において基板９の外周縁よりも径方向外側に位置する部分のおよそ全体が外周リング部２３により覆われる。換言すると、各支持部２２のおよそ全体が、外周リング部２３および基板９の下方に位置する。典型的には、外周リング部２３の外径は、保持ベース２１の直径と同じ、または、保持ベース２１の直径よりも僅かに小さい。したがって、上下方向に沿って見た場合、すなわち、平面視において、外周リング部２３の全体が、保持ベース２１と重なる。同様に、典型例では、外周リング部２３の外径は、遮断板５１（図１参照）の直径と同じ、または、遮断板５１の直径よりも僅かに小さい。したがって、平面視において、遮断板５１が、外周リング部２３の全体と重なり、外周リング部２３の全体が遮断板５１により覆われる。径方向における外周リング部２３の幅は、切欠部２３２の位置を除き、全周に亘って一定である。外周リング部２３の幅は、例えば、２～１０ｍｍである。外周リング部２３の設計によっては、外周リング部２３の幅が周方向に変動してもよい。 外 周 The outer peripheral edge of the outer peripheral ring portion 23 is located radially outward of each support portion 22. The outer peripheral ring portion 23 covers most of the support portions 22, more specifically, approximately the entire portion of the support portion 22 located radially outside the outer peripheral edge of the substrate 9. In other words, approximately the entire support portion 22 is located below the outer peripheral ring portion 23 and the substrate 9. Typically, the outer diameter of the outer peripheral ring portion 23 is the same as or slightly smaller than the diameter of the holding base 21. Therefore, when viewed along the up-down direction, that is, in plan view, the entire outer peripheral ring portion 23 overlaps the holding base 21. Similarly, in a typical example, the outer diameter of the outer peripheral ring portion 23 is equal to or slightly smaller than the diameter of the blocking plate 51 (see FIG. 1). Therefore, in a plan view, the blocking plate 51 overlaps with the entire outer peripheral ring portion 23, and the whole of the outer peripheral ring portion 23 is covered with the blocking plate 51. The width of the outer peripheral ring portion 23 in the radial direction is constant over the entire circumference except for the position of the cutout portion 232. The width of the outer peripheral ring portion 23 is, for example, 2 to 10 mm. Depending on the design of the outer ring portion 23, the width of the outer ring portion 23 may vary in the circumferential direction.
　図３に示す外周リング部２３の上面２３１は、遮断板５１の下面５１２（図１参照）とほぼ平行である。外周リング部２３の下面も、保持ベース２１の上面２１１とほぼ平行である。本実施の形態では、支持棒２２１および当接部２２４を除き、複数の支持部２２のいずれの部位も、外周リング部２３よりも下側に位置する。支持棒２２１および当接部２２４の上端面は、外周リング部２３の上面２３１とほぼ同じ高さとなる。基板９の処理において、基板９の上面９１に供給される処理液を適切に除去するには、外周リング部２３の上面２３１が、基板９の上面９１と同じ高さ、または、上面９１よりも下方に配置されることが好ましい。図１の例では、外周リング部２３の上面２３１および基板９の上面９１が、中心軸Ｊ１に垂直な同一平面上に配置される。 上面 The upper surface 231 of the outer peripheral ring portion 23 shown in FIG. 3 is substantially parallel to the lower surface 512 of the blocking plate 51 (see FIG. 1). The lower surface of the outer ring portion 23 is also substantially parallel to the upper surface 211 of the holding base 21. In this embodiment, except for the support rod 221 and the contact part 224, any part of the plurality of support parts 22 is located below the outer peripheral ring part 23. The upper end surfaces of the support rod 221 and the contact portion 224 are substantially the same height as the upper surface 231 of the outer peripheral ring portion 23. In the processing of the substrate 9, in order to appropriately remove the processing liquid supplied to the upper surface 91 of the substrate 9, the upper surface 231 of the outer peripheral ring portion 23 has the same height as the upper surface 91 of the substrate 9 or has a higher height than the upper surface 91. Preferably, it is located below. In the example of FIG. 1, the upper surface 231 of the outer peripheral ring portion 23 and the upper surface 91 of the substrate 9 are arranged on the same plane perpendicular to the central axis J1.
　図５は、基板処理装置１が基板９を処理する流れを示す図である。基板９の処理を開始する際には、処理対象の基板９が基板処理装置１に搬入される（ステップＳ１１）。具体的には、まず、図３の基板保持部２における複数の支持ピン２５が上昇し、上端が外周リング部２３よりも上方となる支持位置に配置される。図１のチャンバ６の側面部には、開閉可能な搬入出口（図示省略）が設けられており、搬入出口を介して外部の搬送機構により基板９がチャンバ６内に搬送され、複数の支持ピン２５上に載置される。搬送機構がチャンバ６外に退避した後、複数の支持ピン２５が下降する。このとき、複数の当接部２２４が、図３中に実線で示す解除位置に配置されており、基板９が複数の支持ピン２５から複数の支持板部２２３に受け渡される。複数の支持ピン２５は、保持ベース２１内の待機位置まで移動する。その後、リング昇降機構２９により複数の当接部２２４が、基板９の外周縁に当接する保持位置に配置され、基板保持部２において基板９が保持される。既述のように、基板９の搬入搬出時には、外側カップ部４２および内側カップ部４３の双方が下位置に配置され、遮断板５１が離間位置に配置されている。 FIG. 5 is a diagram showing a flow in which the substrate processing apparatus 1 processes the substrate 9. When processing of the substrate 9 is started, the substrate 9 to be processed is carried into the substrate processing apparatus 1 (Step S11). Specifically, first, the plurality of support pins 25 in the substrate holding unit 2 in FIG. 3 are raised, and are disposed at a support position where the upper end is higher than the outer peripheral ring unit 23. An openable / closable loading / unloading port (not shown) is provided on a side surface of the chamber 6 in FIG. 1. The substrate 9 is transported into the chamber 6 by an external transport mechanism via the loading / unloading port. 25. After the transfer mechanism retracts out of the chamber 6, the plurality of support pins 25 descend. At this time, the plurality of contact portions 224 are arranged at the release positions indicated by solid lines in FIG. 3, and the substrate 9 is transferred from the plurality of support pins 25 to the plurality of support plate portions 223. The plurality of support pins 25 move to a standby position in the holding base 21. Thereafter, the plurality of contact portions 224 are arranged at the holding positions in contact with the outer peripheral edge of the substrate 9 by the ring elevating mechanism 29, and the substrate 9 is held by the substrate holding portion 2. As described above, when the substrate 9 is loaded and unloaded, both the outer cup portion 42 and the inner cup portion 43 are arranged at the lower position, and the blocking plate 51 is arranged at the separated position.
　基板９が搬入されると、遮断板昇降機構５４により、遮断板５１が、図１中に実線で示す液処理位置に配置され、遮断板５１の下面５１２と基板９の上面９１との間に処理空間８１が形成される（ステップＳ１２）。液処理位置に配置された遮断板５１は、基板９の上面９１に近接する。既述のように、遮断板５１の直径は基板９の直径以上であり、遮断板５１の中空部も遮断板５１の一部と捉えた場合、液処理位置において遮断板５１は基板９の上面９１の全面に対向する。遮断板５１を液処理位置に配置した状態では、上下方向における処理空間８１の幅は、例えば７ｍｍである。 When the substrate 9 is carried in, the blocking plate elevating mechanism 54 places the blocking plate 51 at the liquid processing position indicated by the solid line in FIG. 1, and moves between the lower surface 512 of the blocking plate 51 and the upper surface 91 of the substrate 9. A processing space 81 is formed (Step S12). The blocking plate 51 arranged at the liquid processing position is close to the upper surface 91 of the substrate 9. As described above, the diameter of the blocking plate 51 is equal to or larger than the diameter of the substrate 9, and when the hollow portion of the blocking plate 51 is regarded as a part of the blocking plate 51, the blocking plate 51 is placed on the upper surface of the substrate 9 at the liquid processing position. 91 faces the entire surface. When the blocking plate 51 is located at the liquid processing position, the width of the processing space 81 in the up-down direction is, for example, 7 mm.
　また、不活性ガス供給部７５により処理空間８１への不活性ガスの供給が開始される。不活性ガスは、上部ノズル７１を介して処理空間８１内に供給される。これにより、所定時間経過後に、処理空間８１が、不活性ガスが充填された不活性ガス充填状態（すなわち、酸素濃度および湿度が低い雰囲気）となる。さらに、図１に示すように、外側カップ部４２が上位置に配置され、基板９に対して径方向に対向する。外側カップ部４２の上端は、全周に亘って周壁部５２に近接するとともに、径方向に対向する。一例では、外側カップ部４２の上端は、周壁部５２の上端よりも３ｍｍほど下方に位置する。なお、内側カップ部４３が基板９に対して径方向に対向してもよい。 {Circle around (5)} The supply of the inert gas to the processing space 81 by the inert gas supply unit 75 is started. The inert gas is supplied into the processing space 81 via the upper nozzle 71. As a result, after a lapse of a predetermined time, the processing space 81 enters an inert gas filled state filled with an inert gas (that is, an atmosphere having a low oxygen concentration and low humidity). Further, as shown in FIG. 1, the outer cup portion 42 is arranged at the upper position, and faces the substrate 9 in the radial direction. The upper end of the outer cup portion 42 is close to the peripheral wall portion 52 over the entire circumference and opposes in the radial direction. In one example, the upper end of the outer cup portion 42 is located about 3 mm below the upper end of the peripheral wall portion 52. Note that the inner cup portion 43 may face the substrate 9 in the radial direction.
　続いて、基板回転機構３により基板９の回転が開始される（ステップＳ１３）。基板９は、水平状態で基板保持部２と共に回転する。また、遮断板回転機構５３により遮断板５１の回転が開始される（ステップＳ１４）。遮断板５１は、水平状態で回転する。本処理例では、遮断板５１の回転数は、基板９の回転数とほぼ同じであり、遮断板５１は基板９と同じ向きに回転する。基板９に対する処理の種類等によっては、遮断板５１の回転数および回転方向が、基板９の回転数および回転方向と相違してもよい。 Next, the rotation of the substrate 9 is started by the substrate rotation mechanism 3 (Step S13). The substrate 9 rotates together with the substrate holder 2 in a horizontal state. Further, the rotation of the blocking plate 51 is started by the blocking plate rotating mechanism 53 (step S14). The blocking plate 51 rotates in a horizontal state. In this processing example, the rotation speed of the blocking plate 51 is substantially the same as the rotation speed of the substrate 9, and the blocking plate 51 rotates in the same direction as the substrate 9. The rotation speed and rotation direction of the blocking plate 51 may be different from the rotation speed and rotation direction of the substrate 9 depending on the type of processing on the substrate 9 and the like.
　続いて、上面処理液供給部７３により上部ノズル７１を介して基板９の上面９１の中央部に薬液が連続的に供給される（ステップＳ１５）。上面９１では、基板９の回転による遠心力により薬液が基板９の外周縁に向かって広がり、上面９１の全体に薬液が供給される。基板９に対する薬液による処理は、遮断板５１の下面５１２と基板９の上面９１との間の狭い空間、すなわち、不活性ガスが充填された処理空間８１において行われる。これにより、基板９に対する薬液処理の均一性を向上することができる。 Next, the chemical liquid is continuously supplied to the central part of the upper surface 91 of the substrate 9 via the upper nozzle 71 by the upper surface processing liquid supply unit 73 (Step S15). On the upper surface 91, the chemical liquid spreads toward the outer peripheral edge of the substrate 9 due to the centrifugal force due to the rotation of the substrate 9, and the chemical liquid is supplied to the entire upper surface 91. The processing of the substrate 9 with the chemical is performed in a narrow space between the lower surface 512 of the blocking plate 51 and the upper surface 91 of the substrate 9, that is, the processing space 81 filled with an inert gas. Thereby, the uniformity of the chemical solution treatment on the substrate 9 can be improved.
　基板９の外周縁、または、外周リング部２３の外周縁から飛散する薬液は、外側カップ部４２の内周面により受けられ、回収される（後述の純水の供給時において同様）。このとき、外側カップ部４２の内周面において受けられた薬液が、仮に基板９に向かって跳ね返る場合でも（いわゆる、スプラッシュバック）、遮断板５１の下面５１２と外周リング部２３の上面２３１との間の幅は狭いため、跳ね返った薬液が基板９に付着して基板９が汚染されることが防止される。基板９に薬液を供給している間も、処理空間８１への不活性ガスの供給は継続される（後述の純水の供給時において同様）。 (4) The chemical scattered from the outer peripheral edge of the substrate 9 or the outer peripheral edge of the outer peripheral ring portion 23 is received and collected by the inner peripheral surface of the outer cup portion 42 (the same applies when pure water described later is supplied). At this time, even if the chemical solution received on the inner peripheral surface of the outer cup portion 42 bounces toward the substrate 9 (so-called splashback), the lower surface 512 of the blocking plate 51 and the upper surface 231 of the outer peripheral ring portion 23 may be in contact with each other. Since the width of the gap is narrow, it is possible to prevent the splashed chemical solution from adhering to the substrate 9 and contaminating the substrate 9. The supply of the inert gas to the processing space 81 is continued even during the supply of the chemical solution to the substrate 9 (the same applies when pure water described later is supplied).
　薬液の供給が所定時間継続されると、薬液の供給が停止される。続いて、上面処理液供給部７３により上部ノズル７１を介して上面９１の中央部に純水が連続的に供給される。また、下面処理液供給部７４により下部ノズル７２を介して基板９の下面９２の中央部に純水が連続的に供給される（ステップＳ１６）。上面９１および下面９２では、基板９の回転により純水が基板９の外周縁に向かって広がり、上面９１および下面９２の全体に純水が供給される。純水の供給により、上面９１に付着する薬液が除去される。また、下面９２が純水により洗浄される。なお、下面９２に供給された純水は、外周リング部２３と保持ベース２１との間の隙間を介して排出可能である。純水の供給は所定時間継続され、その後、停止される。 と When the supply of the chemical is continued for a predetermined time, the supply of the chemical is stopped. Subsequently, pure water is continuously supplied to the center of the upper surface 91 via the upper nozzle 71 by the upper surface processing liquid supply unit 73. Further, pure water is continuously supplied to the center of the lower surface 92 of the substrate 9 via the lower nozzle 72 by the lower processing liquid supply unit 74 (step S16). On the upper surface 91 and the lower surface 92, the rotation of the substrate 9 causes the pure water to spread toward the outer peripheral edge of the substrate 9, and pure water is supplied to the entire upper surface 91 and the lower surface 92. By supplying pure water, the chemical liquid attached to the upper surface 91 is removed. Further, the lower surface 92 is cleaned with pure water. The pure water supplied to the lower surface 92 can be discharged through a gap between the outer peripheral ring portion 23 and the holding base 21. The supply of pure water is continued for a predetermined time, and then stopped.
　続いて、遮断板昇降機構５４により遮断板５１が、図６中に二点鎖線で示す液処理位置から下降し、図６中に実線で示す乾燥処理位置に配置される（ステップＳ１７）。乾燥処理位置は、液処理位置よりも僅かに下方の位置である。これにより、上下方向における処理空間８１の幅が狭められ、例えば３ｍｍとなる。遮断板５１が乾燥処理位置に配置された状態においても、外側カップ部４２の上端は、全周に亘って周壁部５２と近接するとともに、径方向に対向する。詳細には、図６中に矢印Ｗで示すように、外側カップ部４２の上端と周壁部５２の外周面５２２との間の幅（径方向における幅）は、遮断板５１が液処理位置および乾燥処理位置のいずれに配置される場合も、同じとなる。このように、外側カップ部４２と周壁部５２との間の開口面積は、２つの処理位置において一定となる。上記幅Ｗは、気流形成部６１から外側カップ部４２内に向かう気流の流路の最小幅であり、例えば１．５～３．０ｍｍである。 Next, the blocking plate 51 is moved down from the liquid processing position indicated by the two-dot chain line in FIG. 6 by the blocking plate elevating mechanism 54, and is disposed at the drying processing position indicated by the solid line in FIG. 6 (step S17). The drying processing position is a position slightly lower than the liquid processing position. Thereby, the width of the processing space 81 in the vertical direction is reduced to, for example, 3 mm. Even in a state where the blocking plate 51 is arranged at the drying processing position, the upper end of the outer cup portion 42 is close to the peripheral wall portion 52 over the entire circumference and is opposed in the radial direction. In detail, as shown by an arrow W in FIG. 6, the width (the width in the radial direction) between the upper end of the outer cup portion 42 and the outer peripheral surface 522 of the peripheral wall portion 52 is determined by the position of the blocking plate 51 and the liquid processing position. The same applies to any of the drying processing positions. Thus, the opening area between the outer cup portion 42 and the peripheral wall portion 52 is constant at the two processing positions. The width W is the minimum width of the flow path of the airflow from the airflow forming portion 61 toward the inside of the outer cup portion 42, and is, for example, 1.5 to 3.0 mm.
　遮断板５１が乾燥処理位置に配置されると、基板回転機構３が基板９の回転速度を上記処理液（すなわち、薬液および純水）の供給時よりも高くすることにより、基板９の乾燥処理（スピンドライ）が行われる（ステップＳ１８）。このとき、遮断板５１の回転速度も高くすることにより、遮断板５１の下面５１２に付着する処理液も除去される。基板９の乾燥処理を行っている間も、上部ノズル７１から処理空間８１への不活性ガスの供給は継続される。なお、基板９の乾燥処理の前に、基板９の上面９１上にＩＰＡが供給され、上面９１上において純水がＩＰＡに置換されてもよい。 When the blocking plate 51 is located at the drying processing position, the substrate rotating mechanism 3 increases the rotation speed of the substrate 9 from the time of supplying the processing liquid (that is, the chemical solution and the pure water), so that the drying processing of the substrate 9 is performed. (Spin dry) is performed (step S18). At this time, by increasing the rotation speed of the blocking plate 51, the processing liquid adhering to the lower surface 512 of the blocking plate 51 is also removed. While the substrate 9 is being dried, the supply of the inert gas from the upper nozzle 71 to the processing space 81 is continued. In addition, before the drying process of the substrate 9, IPA may be supplied on the upper surface 91 of the substrate 9, and pure water may be replaced with IPA on the upper surface 91.
　乾燥処理が完了すると、遮断板５１の回転、および、基板９の回転が停止される（ステップＳ１９，Ｓ２０）。続いて、遮断板昇降機構５４により、遮断板５１が上昇して、基板９から離れた離間位置に配置されるとともに、上部ノズル７１からの不活性ガスの噴出が停止される。また、外側カップ部４２および内側カップ部４３が下位置に配置される。その後、基板処理装置１から基板９が搬出される（ステップＳ２１）。基板９の搬出では、まず、リング昇降機構２９により複数の当接部２２４が、図３中に実線で示す解除位置に配置され、基板９の保持が解除される。このとき、基板９は、複数の支持板部２２３により下側から支持される。続いて、複数の支持ピン２５が上昇し、外周リング部２３よりも上方の支持位置まで移動する。これにより、基板９が、複数の支持板部２２３から複数の支持ピン２５に受け渡される。その後、搬入出口を介してチャンバ６の内部に進入した搬送機構により、複数の支持ピン２５上の基板９が受け取られ、外部へと搬出される。以上により、基板処理装置１における基板９の処理が完了する。 (4) When the drying process is completed, the rotation of the blocking plate 51 and the rotation of the substrate 9 are stopped (Steps S19 and S20). Subsequently, the blocking plate 51 is raised by the blocking plate elevating mechanism 54 to be disposed at a position away from the substrate 9, and the ejection of the inert gas from the upper nozzle 71 is stopped. Further, the outer cup portion 42 and the inner cup portion 43 are arranged at the lower position. Thereafter, the substrate 9 is unloaded from the substrate processing apparatus 1 (Step S21). In carrying out the substrate 9, first, the plurality of abutting portions 224 are arranged at the release positions indicated by solid lines in FIG. 3 by the ring elevating mechanism 29, and the holding of the substrate 9 is released. At this time, the substrate 9 is supported from below by the plurality of support plate portions 223. Subsequently, the plurality of support pins 25 move up and move to a support position above the outer peripheral ring portion 23. Thereby, the substrate 9 is transferred from the plurality of support plate portions 223 to the plurality of support pins 25. Thereafter, the substrate 9 on the plurality of support pins 25 is received by the transport mechanism that has entered the inside of the chamber 6 via the loading / unloading port, and is transported to the outside. Thus, the processing of the substrate 9 in the substrate processing apparatus 1 is completed.
　ここで、図１の基板処理装置１において、外周リング部２３を省略した比較例の基板処理装置を想定する。基板９の処理では、遮断板５１を液処理位置または乾燥処理位置に配置した状態で、基板保持部２が基板９と共に回転する。このとき、遮断板５１の下面５１２と保持ベース２１の上面２１１との間において、基板９と共に回転する複数の支持部２２に衝突した空気が保持ベース２１の上面２１１に沿う方向のみらなず、遮断板５１側にも広がり、気流の大きな乱れが発生する。これにより、基板９の外周縁近傍において、基板９の上面９１側または下面９２側に、周囲の空気が入り込んでしまう。その結果、基板９の上面９１の外周縁近傍において、不活性ガス雰囲気を維持することができなくなり、上面９１に対する処理の均一性が低下してしまう。また、基板９の周囲の空気が、処理液のミスト等を含む場合には、上面９１および下面９２が汚染されてしまう。さらに、回転方向における各支持部２２の後方近傍において、周囲の圧力よりも低い負圧となる部分が発生することがあり、この場合、基板９の外周縁よりも内側まで、周囲の空気が入り込んでしまう。 Here, a substrate processing apparatus of a comparative example in which the outer peripheral ring portion 23 is omitted from the substrate processing apparatus 1 of FIG. 1 is assumed. In the processing of the substrate 9, the substrate holding unit 2 rotates together with the substrate 9 with the blocking plate 51 placed at the liquid processing position or the drying processing position. At this time, between the lower surface 512 of the blocking plate 51 and the upper surface 211 of the holding base 21, the air that has collided with the plurality of supporting portions 22 rotating together with the substrate 9 is not limited to the direction along the upper surface 211 of the holding base 21. It spreads also to the blocking plate 51 side, and large turbulence of the airflow occurs. As a result, ambient air enters the upper surface 91 or lower surface 92 of the substrate 9 in the vicinity of the outer peripheral edge of the substrate 9. As a result, an inert gas atmosphere cannot be maintained near the outer peripheral edge of the upper surface 91 of the substrate 9, and the uniformity of processing on the upper surface 91 is reduced. If the air around the substrate 9 contains mist of the processing liquid, the upper surface 91 and the lower surface 92 will be contaminated. Further, a portion having a negative pressure lower than the surrounding pressure may be generated in the vicinity of the rear of each support portion 22 in the rotation direction. In this case, the surrounding air enters inside the outer peripheral edge of the substrate 9. Will be.
　比較例の基板処理装置において、上下方向における処理空間８１の幅を小さくする、または、処理空間８１への不活性ガスの流量を大きくすることにより、上面９１側への周囲の空気の入り込みを抑制することも考えられる。しかしながら、処理空間８１の幅を小さくする場合、各種構成部品の寸法精度や位置の調整等の許容範囲を厳しくする必要があり、装置の製造コストが増大してしまう。また、不活性ガスの流量を大きくする場合、不活性ガスの使用量の増大によりランニングコストが増大してしまう。実際には、上記のいずれの場合でも、複数の支持部２２が生じさせる気流の乱れによる、上面９１側への周囲の空気の入り込みは、ある程度生じてしまう。 In the substrate processing apparatus of the comparative example, the width of the processing space 81 in the vertical direction is reduced, or the flow rate of the inert gas into the processing space 81 is increased, thereby suppressing the entry of ambient air into the upper surface 91. It is also possible to do. However, when the width of the processing space 81 is reduced, it is necessary to tighten the allowable range for adjusting the dimensional accuracy and the position of various components, and the manufacturing cost of the apparatus increases. When the flow rate of the inert gas is increased, the running cost increases due to an increase in the amount of the inert gas used. Actually, in any of the above cases, the inflow of the surrounding air into the upper surface 91 due to the turbulence of the airflow generated by the plurality of support portions 22 occurs to some extent.
　これに対し、図１の基板処理装置１では、基板９の周囲を囲む環状の板部材である外周リング部２３が、基板保持部２に設けられる。外周リング部２３の内周縁は、基板９の外周縁に近接しており、各支持部２２の大部分が、外周リング部２３により覆われる。基板処理装置１では、基板保持部２の回転時に、各支持部２２に衝突した空気が遮断板５１側へと広がることが外周リング部２３により抑制されるため、複数の支持部２２により発生する、基板９の外周縁近傍における気流の乱れを抑制（低減）することができる。換言すると、外周リング部２３により、基板９の外周縁近傍における気流を整流することができる。 On the other hand, in the substrate processing apparatus 1 of FIG. 1, the outer peripheral ring 23 which is an annular plate member surrounding the periphery of the substrate 9 is provided on the substrate holder 2. The inner peripheral edge of the outer peripheral ring portion 23 is close to the outer peripheral edge of the substrate 9, and most of the support portions 22 are covered by the outer peripheral ring portion 23. In the substrate processing apparatus 1, when the substrate holding unit 2 rotates, the air that has collided with each support unit 22 is prevented from spreading to the blocking plate 51 side by the outer peripheral ring unit 23. In addition, the turbulence of the air flow near the outer peripheral edge of the substrate 9 can be suppressed (reduced). In other words, the airflow in the vicinity of the outer peripheral edge of the substrate 9 can be rectified by the outer peripheral ring portion 23.
　これにより、基板９の外周縁近傍において、上面９１側または下面９２側に、周囲の空気が入り込むことを抑制することができる。その結果、上面９１のおよそ全体に亘って不活性雰囲気を維持することができ、上面９１に対する処理の均一性を向上することができる。また、上面９１および下面９２が汚染されることも抑制することができる。外周リング部２３を有する基板処理装置１では、上下方向における処理空間８１の幅を大きくする場合でも、処理空間８１の不活性雰囲気をある程度維持することが可能であるため、各種構成部品の寸法精度や位置の調整等の許容範囲を緩くすることができ、基板処理装置１の製造コストを削減することも可能となる。 This can prevent the surrounding air from entering the upper surface 91 or the lower surface 92 in the vicinity of the outer peripheral edge of the substrate 9. As a result, an inert atmosphere can be maintained over substantially the entire upper surface 91, and the uniformity of processing on the upper surface 91 can be improved. Further, contamination of the upper surface 91 and the lower surface 92 can be suppressed. In the substrate processing apparatus 1 having the outer peripheral ring portion 23, even when the width of the processing space 81 in the vertical direction is increased, the inert atmosphere of the processing space 81 can be maintained to some extent. The allowable range for adjusting the position and the position can be reduced, and the manufacturing cost of the substrate processing apparatus 1 can be reduced.
　外周リング部２３の外周縁が、各支持部２２の径方向外側に位置することにより、外周リング部２３により支持部２２のより多くの部分を覆うことが可能となる。その結果、複数の支持部２２により発生する気流の乱れをさらに低減することができる。また、基板保持部２では、当接部２２４を回動する回動軸部２２２が、基板９の径方向外側に位置する。このように、当接部２２４の回動に必要な回動軸部２２２を、基板９の下面９２に対向しない位置に配置することにより、回動軸部２２２およびその周囲の部材により発生する気流の乱れが、基板９に与える影響を低減することができる。なお、基板保持部２の設計によっては、各支持部２２の一部が、外周リング部２３の外周縁よりも径方向外側に位置してもよい。 (4) Since the outer peripheral edge of the outer peripheral ring portion 23 is located radially outside of each support portion 22, it is possible to cover a larger portion of the support portion 22 with the outer peripheral ring portion 23. As a result, the turbulence of the airflow generated by the plurality of support portions 22 can be further reduced. In the substrate holding unit 2, the rotation shaft 222 that rotates the contact unit 224 is located radially outside the substrate 9. By arranging the rotation shaft 222 necessary for rotation of the contact portion 224 at a position that does not face the lower surface 92 of the substrate 9 in this manner, the airflow generated by the rotation shaft 222 and members around the rotation shaft 222 is formed. The influence of the disturbance on the substrate 9 can be reduced. Note that, depending on the design of the substrate holding unit 2, a part of each support portion 22 may be located radially outside the outer peripheral edge of the outer peripheral ring portion 23.
　次に、図１の基板処理装置１において、周壁部５２を省略した他の比較例の基板処理装置を想定する。基板９の処理では、遮断板５１を液処理位置または乾燥処理位置に配置した状態で、遮断板５１が高速に回転する。このとき、遮断板５１の上面５１１において外側に飛び出す強い気流が発生する。当該気流は、遮断板５１の周囲において下方に向かう気流（下降気流）と衝突し、基板９の外周縁近傍において気流の乱れが発生する。これにより、カップ部の内部における雰囲気（薬液のミスト等を含む雰囲気）が拡散されて、基板９の上面９１および下面９２が汚染される場合がある。 Next, a substrate processing apparatus of another comparative example in which the peripheral wall portion 52 is omitted from the substrate processing apparatus 1 of FIG. 1 is assumed. In the processing of the substrate 9, the blocking plate 51 rotates at a high speed in a state where the blocking plate 51 is disposed at the liquid processing position or the drying processing position. At this time, a strong air current that jumps out on the upper surface 511 of the blocking plate 51 is generated. The airflow collides with a downward airflow (downward airflow) around the blocking plate 51, and turbulence of the airflow occurs near the outer peripheral edge of the substrate 9. As a result, the atmosphere inside the cup portion (the atmosphere containing the mist of the chemical solution) is diffused, and the upper surface 91 and the lower surface 92 of the substrate 9 may be contaminated.
　また、基板処理装置１において遮断板５１を液処理位置および乾燥処理位置に配置するように、当該他の比較例の基板処理装置において、基板９に対する一の処理時、および、基板９に対する他の処理時に、上下方向における処理空間８１の幅を相違させる場合、カップ部の上端と、遮断板５１の外周端面との間の距離が変動する。この場合、カップ部に流入する気流の状態が変動してしまい、カップ部の内部における雰囲気（薬液のミスト等を含む雰囲気）が拡散されて、基板９の上面９１および下面９２が汚染される可能性がある。 Further, in the substrate processing apparatus of the other comparative example, when the substrate 9 is subjected to one processing, and another substrate with respect to the substrate 9 is arranged such that the blocking plate 51 is disposed at the liquid processing position and the drying processing position in the substrate processing apparatus 1. When the width of the processing space 81 in the vertical direction is made different during the processing, the distance between the upper end of the cup portion and the outer peripheral end surface of the blocking plate 51 varies. In this case, the state of the airflow flowing into the cup portion fluctuates, and the atmosphere inside the cup portion (the atmosphere including the mist of the chemical solution) is diffused, and the upper surface 91 and the lower surface 92 of the substrate 9 may be contaminated. There is.
　これに対し、図１の基板処理装置１では、遮断板５１の外周縁部５１３から上方に向かって突出する周壁部５２が設けられる。これにより、遮断板５１の上面５１１において外側に飛び出す気流を低減することができ、基板９の外周縁近傍における気流の乱れを抑制することができる。換言すると、基板９の外周縁近傍における気流を整流することができる。その結果、カップ部（外側カップ部４２および内側カップ部４３）の内部における雰囲気の拡散を抑制することができる。 On the other hand, in the substrate processing apparatus 1 of FIG. 1, the peripheral wall 52 protruding upward from the outer peripheral edge 513 of the blocking plate 51 is provided. Accordingly, the airflow that jumps out on the upper surface 511 of the blocking plate 51 can be reduced, and the turbulence of the airflow near the outer peripheral edge of the substrate 9 can be suppressed. In other words, the airflow near the outer peripheral edge of the substrate 9 can be rectified. As a result, the diffusion of the atmosphere inside the cup portions (the outer cup portion 42 and the inner cup portion 43) can be suppressed.
　遮断板５１の上面５１１において外側に飛び出す気流をより確実に低減するには、周壁部５２の高さは１０ｍｍ以上であることが好ましい。周壁部５２の高さの上限は、周壁部５２の重量が過度に大きくならない範囲で決定されてよく、例えば１５ｍｍである。また、上面５１１において外側に飛び出す気流を低減することが可能な範囲で、周壁部５２の内周面５２１が遮断板５１の上面５１１に対して傾斜してもよい。中心軸Ｊ１を含む遮断板５１および周壁部５２の断面（図１参照）において、遮断板５１の上面５１１と周壁部５２の内周面５２１とがなす角度は、例えば、６０～１２０度であり、好ましくは、７５～１０５度である。周壁部５２の肉厚は、使用する材料の強度、回転により発生する遠心力等を考慮して適宜決定されてよい。 In order to more reliably reduce the airflow that jumps out on the upper surface 511 of the blocking plate 51, the height of the peripheral wall portion 52 is preferably 10 mm or more. The upper limit of the height of the peripheral wall 52 may be determined within a range where the weight of the peripheral wall 52 does not become excessively large, and is, for example, 15 mm. Further, the inner peripheral surface 521 of the peripheral wall portion 52 may be inclined with respect to the upper surface 511 of the blocking plate 51 as long as the airflow that jumps outward on the upper surface 511 can be reduced. In the cross section of the blocking plate 51 and the peripheral wall portion 52 including the central axis J1 (see FIG. 1), the angle formed by the upper surface 511 of the blocking plate 51 and the inner peripheral surface 521 of the peripheral wall portion 52 is, for example, 60 to 120 degrees. , Preferably 75 to 105 degrees. The thickness of the peripheral wall portion 52 may be appropriately determined in consideration of the strength of the material used, the centrifugal force generated by rotation, and the like.
　また、基板処理装置１では、基板９に対する一の処理時、および、基板９に対する他の処理時において、上下方向における処理空間８１の幅を相違させる場合であっても、当該一の処理時および当該他の処理時の双方において、カップ部（上記処理例では、外側カップ部４２）の上端が、周壁部５２と径方向に対向する。これにより、カップ部内へと向かう気流の流路の最小幅（または、流路の最小面積）を、当該一の処理時および当該他の処理時において一定に保つことができる。このように、基板処理装置１では、基板９に対する処理の内容に応じて処理空間８１の幅を変更しつつ、カップ部に流入する気流の状態を一定に保つことができる。その結果、カップ部の内部における雰囲気の拡散を容易に抑制することが可能となる。 Further, in the substrate processing apparatus 1, even when the width of the processing space 81 in the vertical direction is made different at the time of one processing for the substrate 9 and at the time of another processing for the substrate 9, In both of the other processes, the upper end of the cup portion (in the above process example, the outer cup portion 42) radially opposes the peripheral wall portion 52. Thus, the minimum width (or the minimum area of the flow path) of the flow path of the airflow toward the inside of the cup portion can be kept constant during the one process and the other process. As described above, in the substrate processing apparatus 1, the state of the airflow flowing into the cup portion can be kept constant while changing the width of the processing space 81 according to the content of the processing on the substrate 9. As a result, it is possible to easily suppress the diffusion of the atmosphere inside the cup portion.
　上記基板処理装置１では様々な変形が可能である。 で は Various modifications are possible in the substrate processing apparatus 1.
　図７に示すように、外周リング部２３が、支持部２２とは異なるリング支持部材２３３により支持されてもよい。一方、図７の基板保持部２では、支持部２２のみならず、リング支持部材２３３によっても気流の乱れが発生してしまう。したがって、基板９の外周縁近傍における気流の乱れをより確実に抑制するという観点では、外周リング部２３が、複数の支持部２２により支持されることが好ましい。また、図７の基板保持部２では、支持部２２の回動軸部２２２ａが平面視において基板９と重なるが、回動軸部およびその周囲の部材により発生する気流の乱れが、基板９に与える影響を低減するという観点では、回動軸部が基板９の径方向外側に位置することが好ましい。 外 周 As shown in FIG. 7, the outer peripheral ring portion 23 may be supported by a ring support member 233 different from the support portion 22. On the other hand, in the substrate holding unit 2 of FIG. 7, not only the support unit 22 but also the ring support member 233 causes airflow turbulence. Therefore, from the viewpoint of more reliably suppressing the turbulence of the airflow near the outer peripheral edge of the substrate 9, the outer peripheral ring portion 23 is preferably supported by the plurality of support portions 22. Further, in the substrate holding unit 2 of FIG. 7, the rotation shaft 222 a of the support unit 22 overlaps the substrate 9 in a plan view, but the turbulence of the airflow generated by the rotation shaft and the surrounding members causes the substrate 9. From the viewpoint of reducing the influence, it is preferable that the rotation shaft portion be located radially outside the substrate 9.
　図３および図７の例では、各支持部２２の一部が、外周リング部２３により覆われるが、支持部２２の全部が、外周リング部２３により覆われるように、基板保持部２を設計することも可能である。基板処理装置１では、各支持部２２の少なくとも一部が、外周リング部２３により覆われていればよい。 In the examples of FIGS. 3 and 7, a part of each support portion 22 is covered by the outer peripheral ring portion 23, but the substrate holding portion 2 is designed so that the entire support portion 22 is covered by the outer peripheral ring portion 23. It is also possible. In the substrate processing apparatus 1, at least a part of each support part 22 may be covered by the outer peripheral ring part 23.
　外周リング部２３は、実質的に環状であればよく、設計によっては、周方向における一部が欠落していてもよい。基板保持部２の回転により支持部２２に衝突した空気が遮断板５１側へと広がることを抑制するという観点では、外周リング部２３は、各支持部２２から回転方向前側に広がる部分を含むことが好ましい。 The outer peripheral ring portion 23 may be substantially annular, and may be partially missing in the circumferential direction depending on the design. From the viewpoint of suppressing the air that has collided with the support portion 22 due to the rotation of the substrate holding portion 2 from spreading to the blocking plate 51, the outer peripheral ring portion 23 includes a portion that spreads forward from the respective support portions 22 in the rotation direction. Is preferred.
　図１の例では、外周リング部２３の全体が遮断板５１により覆われるが、基板処理装置１の設計によっては、平面視において、外周リング部２３の一部が、遮断板５１の外側に配置されてもよい。すなわち、外周リング部２３では、少なくとも一部が、所定の処理位置に配置された遮断板５１と平面視において重なっていればよい。これにより、基板９の外周縁近傍において、周囲の空気が上面９１側に入り込むことを抑制することができる。好ましくは、平面視において、外周リング部２３の内周縁が全周に亘って遮断板５１と重なる。これにより、基板９の外周縁近傍において、周囲の空気が上面９１側に入り込むことを全周に亘って抑制することが可能となる。同様に、平面視において、外周リング部２３の内周縁が全周に亘って保持ベース２１と重なることが好ましい。これにより、基板９の外周縁近傍において、周囲の空気が下面９２側に入り込むことを全周に亘って抑制することが可能となる。 In the example of FIG. 1, the entire outer peripheral ring portion 23 is covered with the blocking plate 51. However, depending on the design of the substrate processing apparatus 1, a part of the outer peripheral ring portion 23 is disposed outside the blocking plate 51 in plan view. May be done. That is, at least a part of the outer peripheral ring portion 23 only needs to overlap the blocking plate 51 arranged at the predetermined processing position in a plan view. Thereby, in the vicinity of the outer peripheral edge of the substrate 9, it is possible to suppress the surrounding air from entering the upper surface 91 side. Preferably, in plan view, the inner peripheral edge of the outer peripheral ring portion 23 overlaps the blocking plate 51 over the entire periphery. This makes it possible to suppress the surrounding air from entering the upper surface 91 in the vicinity of the outer peripheral edge of the substrate 9 over the entire circumference. Similarly, in plan view, the inner peripheral edge of the outer peripheral ring portion 23 preferably overlaps the holding base 21 over the entire periphery. This makes it possible to suppress the surrounding air from entering the lower surface 92 side in the vicinity of the outer peripheral edge of the substrate 9 over the entire circumference.
　周壁部５２は、遮断板５１の上面５１１における外周縁部５１３に設けられるのであるならば、遮断板５１の外周端面から僅かに内側（中心軸Ｊ１側）に入り込んだ位置に、設けられてもよい。 If the peripheral wall portion 52 is provided at the outer peripheral edge portion 513 on the upper surface 511 of the blocking plate 51, it may be provided at a position slightly inside (the center axis J1 side) from the outer peripheral end surface of the blocking plate 51. Good.
　基板９を処理する際に、遮断板５１が、基板保持部２に連結されることにより、遮断板５１が基板保持部２と共に回転してもよい。例えば、図３の支持棒２２１が外周リング部２３よりも上方に突出しており、基板９を処理する際に、遮断板５１の下面５１２に設けられる凹部が、支持棒２２１の上端部に嵌まるように、遮断板５１が基板保持部２に載置される。これにより、遮断板５１と基板保持部２とが連結される。このような基板処理装置１では、基板回転機構３が、遮断板回転機構５３を兼ねていると捉えることができる。 処理 When processing the substrate 9, the blocking plate 51 may be rotated together with the substrate holding unit 2 by connecting the blocking plate 51 to the substrate holding unit 2. For example, the support bar 221 of FIG. 3 protrudes above the outer peripheral ring portion 23, and a recess provided on the lower surface 512 of the blocking plate 51 fits into the upper end of the support bar 221 when processing the substrate 9. Thus, the blocking plate 51 is placed on the substrate holding unit 2. Thereby, the blocking plate 51 and the substrate holding unit 2 are connected. In such a substrate processing apparatus 1, it can be considered that the substrate rotation mechanism 3 also serves as the blocking plate rotation mechanism 53.
　基板保持部２において外周リング部２３を設けない場合等には、基板９の下面９２を吸着保持する基板保持部が採用されてもよい。また、遮断板５１において周壁部５２を設けない場合には、遮断板回転機構５３が省略されてもよい。 In the case where the outer peripheral ring portion 23 is not provided in the substrate holding portion 2 or the like, a substrate holding portion that sucks and holds the lower surface 92 of the substrate 9 may be employed. In the case where the peripheral wall portion 52 is not provided in the blocking plate 51, the blocking plate rotating mechanism 53 may be omitted.
　基板処理装置１では、基板保持部２を遮断板５１に対して上下方向に移動する昇降機構が設けられてもよい。すなわち、遮断板５１は、基板保持部２に対して上下方向に相対的に移動すればよい。 In the substrate processing apparatus 1, an elevating mechanism that moves the substrate holding unit 2 in the vertical direction with respect to the blocking plate 51 may be provided. That is, the blocking plate 51 may be moved relative to the substrate holding unit 2 in the vertical direction.
　基板処理装置１では、基板９の上面９１または下面９２のいずれか一方のみに対して処理液による処理が行われてもよい。基板処理装置１において処理が行われる基板は半導体基板には限定されず、ガラス基板や他の基板であってもよい。また、基板処理装置１が、円板状とは異なる外形の基板の処理に用いられてもよい。 In the substrate processing apparatus 1, only one of the upper surface 91 and the lower surface 92 of the substrate 9 may be processed with the processing liquid. The substrate on which the processing is performed in the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or another substrate. Further, the substrate processing apparatus 1 may be used for processing a substrate having an outer shape different from a disk shape.
　上記実施の形態および各変形例における構成は、相互に矛盾しない限り適宜組み合わされてよい。 The configurations in the above-described embodiment and each modified example may be appropriately combined as long as they do not conflict with each other.
　発明を詳細に描写して説明したが、既述の説明は例示的であって限定的なものではない。したがって、本発明の範囲を逸脱しない限り、多数の変形や態様が可能であるといえる。 Although the invention has been described and described in detail, the above description is illustrative and not restrictive. Therefore, it can be said that many modifications and aspects are possible without departing from the scope of the present invention.
　１　　基板処理装置
　２　　基板保持部
　３　　基板回転機構
　９　　基板
　２１　　保持ベース
　２２　　支持部
　２３　　外周リング部
　４２，４３　　カップ部
　５１　　遮断板
　５２　　周壁部
　５３　　遮断板回転機構
　５４　　遮断板昇降機構
　６１　　気流形成部
　７３　　上面処理液供給部
　７５　　不活性ガス供給部
　８１　　処理空間
　９１　　（基板の）上面
　２２２，２２２ａ　　回動軸部
　２２４　　当接部
　５１３　　（遮断板の）外周縁部
　Ｊ１　　中心軸 DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Substrate holding part 3 Substrate rotating mechanism 9 Substrate 21 Holding base 22 Supporting part 23 Outer ring part 42, 43 Cup part 51 Blocking plate 52 Peripheral wall part 53 Blocking plate rotating mechanism 54 Blocking plate elevating mechanism 61 Airflow forming part 73 Upper surface processing liquid supply part 75 Inert gas supply part 81 Processing space 91 Upper surface (of substrate) 222, 222a Rotating shaft part 224 Contact part 513 Peripheral edge part (of blocking plate) J1 Central axis

Claims (14)

  1. 　基板処理装置であって、
    　基板を水平状態で保持する基板保持部と、
    　上下方向を向く中心軸を中心として前記基板保持部を回転する基板回転機構と、
    　前記基板の上面に対向する板状であり、前記基板を処理する際に前記上面に近接した処理位置に配置されることにより、前記上面との間で処理空間を形成する遮断板と、
    を備え、
    　前記処理位置において前記遮断板は前記基板の前記上面の全面に対向し、
    　前記基板保持部が、
    　前記基板の下方に配置される保持ベースと、
    　前記基板の保持時に前記基板の外周縁に当接する複数の当接部をそれぞれ有し、前記保持ベース上において周方向に配列される複数の支持部と、
    　内周縁が前記基板の前記外周縁に近接した状態で前記基板の周囲を囲む環状の板部材であり、各支持部の少なくとも一部を覆い、かつ、前記処理位置に配置された前記遮断板と少なくともその一部が平面視において重なる外周リング部と、
    を備える。     A substrate processing apparatus,
    A substrate holding unit for holding the substrate in a horizontal state,
    A substrate rotating mechanism that rotates the substrate holding unit about a vertical axis that faces in the vertical direction,
    A blocking plate that is plate-shaped facing the upper surface of the substrate and is disposed at a processing position close to the upper surface when processing the substrate, thereby forming a processing space with the upper surface;
    With
    In the processing position, the blocking plate faces the entire upper surface of the substrate,
    The substrate holding unit,
    A holding base arranged below the substrate,
    A plurality of contact portions that respectively contact the outer peripheral edge of the substrate when holding the substrate, and a plurality of support portions arranged in a circumferential direction on the holding base;
    An inner peripheral edge is an annular plate member surrounding the periphery of the substrate in a state close to the outer peripheral edge of the substrate, covering at least a part of each support portion, and the shielding plate disposed at the processing position. An outer peripheral ring portion at least a part of which overlaps in a plan view,
    Is provided.
  2. 　請求項１に記載の基板処理装置であって、
    　前記外周リング部の外周縁が、前記各支持部の径方向外側に位置する。     The substrate processing apparatus according to claim 1,
    An outer peripheral edge of the outer peripheral ring portion is located radially outward of each of the support portions.
  3. 　請求項１または２に記載の基板処理装置であって、
    　前記各支持部が、当接部を回動する回動軸部を有し、
    　前記回動軸部が、前記基板の径方向外側に位置する。     The substrate processing apparatus according to claim 1, wherein:
    Each of the support portions has a rotation shaft portion that rotates the contact portion,
    The rotation shaft is located radially outside the substrate.
  4. 　請求項１ないし３のいずれか１つに記載の基板処理装置であって、
    　前記外周リング部が、前記複数の支持部により支持される。     The substrate processing apparatus according to claim 1, wherein:
    The outer peripheral ring portion is supported by the plurality of support portions.
  5. 　請求項１ないし４のいずれか１つに記載の基板処理装置であって、
    　前記処理空間に不活性ガスを供給する不活性ガス供給部をさらに備える。     The substrate processing apparatus according to any one of claims 1 to 4, wherein
    The apparatus may further include an inert gas supply unit that supplies an inert gas to the processing space.
  6. 　請求項１ないし５のいずれか１つに記載の基板処理装置であって、
    　前記上下方向を向く中心軸を中心として前記遮断板を回転する遮断板回転機構と、
    　前記遮断板の外周縁部から上方に向かって突出する周壁部と、
    をさらに備える。     The substrate processing apparatus according to claim 1, wherein:
    A blocking plate rotation mechanism that rotates the blocking plate about a center axis that faces the vertical direction,
    A peripheral wall protruding upward from an outer peripheral edge of the blocking plate,
    Is further provided.
  7. 　請求項１ないし６のいずれか１つに記載の基板処理装置であって、
    　前記遮断板および前記基板が円板状であり、
    　前記遮断板の直径が、前記基板の直径以上である。     The substrate processing apparatus according to claim 1, wherein:
    The blocking plate and the substrate are disk-shaped,
    The diameter of the blocking plate is greater than or equal to the diameter of the substrate.
  8. 　基板処理装置であって、
    　基板を水平状態で保持する基板保持部と、
    　上下方向を向く中心軸を中心として前記基板保持部を回転する基板回転機構と、
    　前記基板の上面に対向する板状であり、前記基板を処理する際に前記上面に近接した処理位置に配置されることにより、前記上面との間で処理空間を形成する遮断板と、
    　前記上下方向を向く中心軸を中心として前記遮断板を回転する遮断板回転機構と、
    　前記遮断板の外周縁部から上方に向かって突出する周壁部と、
    を備える。     A substrate processing apparatus,
    A substrate holding unit for holding the substrate in a horizontal state,
    A substrate rotation mechanism that rotates the substrate holding portion about a central axis that faces in the vertical direction,
    A blocking plate that has a plate shape facing the upper surface of the substrate and is disposed at a processing position close to the upper surface when processing the substrate, thereby forming a processing space with the upper surface;
    A blocking plate rotating mechanism that rotates the blocking plate about a center axis that faces the vertical direction,
    A peripheral wall protruding upward from an outer peripheral edge of the blocking plate,
    Is provided.
  9. 　請求項８に記載の基板処理装置であって、
    　前記遮断板の上方において、下降気流を形成する気流形成部をさらに備える。     The substrate processing apparatus according to claim 8, wherein:
    An airflow forming unit that forms a downward airflow is further provided above the blocking plate.
  10. 　請求項８または９に記載の基板処理装置であって、
    　前記基板の前記上面に処理液を供給する処理液供給部と、
    　前記基板の前記上面から飛散する処理液を受けるカップ部と、
    をさらに備える。     The substrate processing apparatus according to claim 8, wherein:
    A processing liquid supply unit for supplying a processing liquid to the upper surface of the substrate,
    A cup portion for receiving a processing liquid scattered from the upper surface of the substrate,
    Is further provided.
  11. 　請求項１０に記載の基板処理装置であって、
    　前記遮断板が前記処理位置に配置された際に、前記カップ部の上端が、前記周壁部と近接する。     The substrate processing apparatus according to claim 10,
    When the blocking plate is located at the processing position, an upper end of the cup portion is close to the peripheral wall portion.
  12. 　請求項１０または１１に記載の基板処理装置であって、
    　前記遮断板が前記処理位置に配置された際に、前記カップ部の上端が、前記周壁部と径方向に対向する。     The substrate processing apparatus according to claim 10, wherein:
    When the blocking plate is located at the processing position, an upper end of the cup portion radially opposes the peripheral wall portion.
  13. 　請求項１２に記載の基板処理装置であって、
    　前記遮断板を前記基板保持部に対して前記上下方向に相対的に移動する昇降機構をさらに備え、
    　前記基板に対する一の処理時、および、前記基板に対する他の処理時において、前記上下方向における前記処理空間の幅が相違し、
    　前記一の処理時、および、前記他の処理時において、前記カップ部の前記上端が、前記周壁部と前記径方向に対向する。     The substrate processing apparatus according to claim 12, wherein
    Further comprising an elevating mechanism for moving the blocking plate relatively in the vertical direction with respect to the substrate holding unit,
    At the time of one processing on the substrate, and at the time of another processing on the substrate, the width of the processing space in the vertical direction is different,
    At the time of the one processing and the other processing, the upper end of the cup portion faces the peripheral wall portion in the radial direction.
  14. 　請求項８ないし１３のいずれか１つに記載の基板処理装置であって、
    　前記遮断板および前記基板が円板状であり、
    　前記遮断板の直径が、前記基板の直径以上である。     The substrate processing apparatus according to claim 8, wherein:
    The blocking plate and the substrate are disk-shaped,
    The diameter of the blocking plate is greater than or equal to the diameter of the substrate.
PCT/JP2019/022219 2018-07-03 2019-06-04 Substrate processing device WO2020008784A1 (en)

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