TWI779151B - processing methods - Google Patents

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TWI779151B
TWI779151B TW108100369A TW108100369A TWI779151B TW I779151 B TWI779151 B TW I779151B TW 108100369 A TW108100369 A TW 108100369A TW 108100369 A TW108100369 A TW 108100369A TW I779151 B TWI779151 B TW I779151B
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processing
abnormality
wafer
workpiece
detected
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TW201936322A (en
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服部南見
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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Abstract

[課題]即使在被加工物的加工後仍然可以容易地特定已檢測出異常之位置。 [解決手段]一種加工方法，是將設定有複數條加工預定線的被加工物沿著該加工預定線來加工之加工方法，並具備有：膠帶黏貼步驟，在被加工物的被黏貼面上黏貼比該被黏貼面的直徑更大的直徑之膠帶；保持步驟，在具有保持面的保持工作台的該保持面上以將該被黏貼面側朝向該保持面的狀態來載置被加工物，而隔著該膠帶將該被加工物保持於保持工作台上；及加工步驟，以加工單元將該保持工作台上所保持的該被加工物沿著該加工預定線來加工，在該加工步驟中，是實施該被加工物的加工並且監視有無該加工之異常，且在已檢測出該加工之異常的情況下，在已檢測出該加工之異常的加工預定線的延長線上對該膠帶形成標記。[Problem] Even after the workpiece is processed, it is possible to easily specify the position where an abnormality has been detected. [Solution] A processing method, which is a processing method in which a workpiece having a plurality of planned processing lines is processed along the planned processing lines, and includes: a tape sticking step, on the pasted surface of the workpiece Sticking a tape having a diameter larger than the diameter of the surface to be pasted; a holding step of placing the workpiece on the holding surface of a holding table having a holding surface with the side of the surface to be pasted facing the holding surface , and hold the processed object on the holding table through the adhesive tape; In the step, the processing of the workpiece is carried out and the abnormality of the processing is monitored, and if the abnormality of the processing has been detected, the tape is placed on the extension line of the processing schedule line where the abnormality of the processing has been detected. Form a mark.

Description

加工方法processing method

發明領域 本發明是有關於一種將設定有複數條加工預定線的被加工物沿著加工預定線來加工之加工方法。Field of the Invention The present invention relates to a machining method for machining a workpiece having a plurality of planned machining lines set along the planned machining lines.

發明背景 在行動電話或電腦等之電子機器所使用的元件晶片，是例如切斷由半導體形成的晶圓來製造。在晶圓的正面設定有交叉的複數條加工預定線(切割道)。晶圓的正面之藉由加工預定線而區劃的各區域中，形成有例如IC(積體電路，Integrated Circuit)、LSI(大型積體電路，Large Scale Integration)等之元件。之後，當沿著加工預定線分割晶圓時，即可以形成一個個的元件晶片。Background of the Invention Element wafers used in electronic devices such as mobile phones and computers are manufactured by, for example, cutting wafers formed of semiconductors. A plurality of intersecting planned processing lines (dicing lines) are set on the front surface of the wafer. On the front side of the wafer, components such as IC (Integrated Circuit) and LSI (Large Scale Integration) are formed in each area partitioned by the planned processing line. Afterwards, when the wafer is divided along the line to be processed, individual element wafers can be formed.

晶圓的分割是以具有切割單元的切割裝置來實施。切割單元具備成為旋轉之軸的主軸、及裝設於該主軸的一端之切割刀片。當藉由使主軸旋轉來使切割刀片旋轉，並使旋轉的切割刀片沿著加工預定線切入晶圓等之被加工物來切割被加工物時，即可分割被加工物。Dividing of the wafer is performed by a dicing device having a dicing unit. The cutting unit is provided with a main shaft serving as an axis of rotation, and a cutting blade attached to one end of the main shaft. When the main shaft is rotated to rotate the dicing blade, and the rotating dicing blade is cut into the workpiece such as a wafer along a line to be processed to cut the workpiece, the workpiece can be divided.

又，晶圓的分割也可以藉由具有雷射加工單元的雷射加工裝置來實施。當從雷射加工單元將可以在晶圓等之被加工物透射之波長的雷射光束沿著加工預定線來朝被加工物照射並聚光於被加工物的內部時，即可以藉由多光子吸收而在聚光點附近形成改質層。並且，當使裂隙從改質層朝被加工物的正、背面伸長時，即可分割被加工物。In addition, the division of the wafer can also be performed by a laser processing device having a laser processing unit. When a laser beam of a wavelength that can be transmitted through a workpiece such as a wafer is irradiated from the laser processing unit toward the workpiece along the planned processing line and focused on the inside of the workpiece, it can be achieved by multiple Photons are absorbed to form a modified layer near the light-condensing point. Furthermore, when the cracks are extended from the reformed layer toward the front and back of the workpiece, the workpiece can be divided.

又，晶圓的分割亦可從雷射加工單元將對被加工物具有吸收性之波長的雷射光束沿著加工預定線來照射於被加工物的正面，以藉由燒蝕(ablation)加工來形成溝而實施。In addition, the division of the wafer can also be processed by ablation (ablation) by irradiating the laser beam of the wavelength that has absorption to the workpiece from the laser processing unit to the front surface of the workpiece along the line to be processed. To form a ditch and implement.

這些加工裝置搭載有各種感測器。在加工裝置中，是一邊藉由感測器來監視加工是否按照預定地實施一邊實施加工。例如，加工裝置具備有相機單元以作為感測器，並藉由相機單元來確認從加工位置的預定位置之偏離或已形成的溝等之加工痕跡的寬度是否在容許範圍內等(參照專利文獻1及專利文獻2)。These processing devices are equipped with various sensors. In the processing device, the processing is carried out while monitoring whether the processing is carried out as planned by a sensor. For example, the processing device is equipped with a camera unit as a sensor, and the camera unit confirms whether the deviation from the predetermined position of the processing position or the width of the processing trace such as the formed groove is within the allowable range, etc. (refer to the patent document 1 and Patent Document 2).

在切割裝置中，是例如將電流計連接到使主軸旋轉的馬達，藉由該電流計來監視加工中的負載電流值，以確認該負載電流值是否在適當範圍內(參照專利文獻3)。又，在雷射加工裝置中，是例如監視雷射加工單元的輸出值，以確認該輸出值是否在適當範圍內。In a cutting device, for example, an ammeter is connected to a motor that rotates the spindle, and the load current value during machining is monitored by the ammeter to confirm whether the load current value is within an appropriate range (see Patent Document 3). Also, in the laser processing apparatus, for example, the output value of the laser processing unit is monitored to check whether the output value is within an appropriate range.

因為在已發生加工之異常的情況下，會使以感測器所觀測之值脫離適當範圍，所以可檢測出該異常的發生。在已檢測出加工之異常的情況下，加工裝置會停止被加工物的加工，且向加工裝置的使用者或管理者通知異常之檢測，以催促使用者或管理者應對處理。並且，使用者或管理者可適當地調整加工裝置或被加工物，使加工裝置重新開始被加工物的加工。 先前技術文獻 專利文獻When an abnormality in processing has occurred, the value observed by the sensor will deviate from the appropriate range, so the occurrence of the abnormality can be detected. When a processing abnormality is detected, the processing device stops processing the workpiece, and notifies the user or manager of the processing device of the detection of the abnormality, so as to urge the user or manager to deal with it. In addition, the user or the manager can properly adjust the processing device or the workpiece to restart the processing of the workpiece by the processing device. Prior Art Documents Patent Documents

專利文獻1：日本專利特開2013-74198號公報 專利文獻2：日本專利特開2016-104491號公報 專利文獻3：日本專利特開2001-9675號公報Patent Document 1: Japanese Patent Laid-Open No. 2013-74198 Patent Document 2: Japanese Patent Laid-Open No. 2016-104491 Patent Document 3: Japanese Patent Laid-Open No. 2001-9675

發明概要 發明欲解決之課題 在頻繁地檢測出加工之異常的情況下，加工裝置的使用者或管理者必須特定異常之檢測的原因並且採取對策。為了特定異常之檢測的原因，必須對在被加工物的哪一個位置進行加工時檢測出何種異常等異常之檢測的傾向進行分析。為了完成被加工物的加工並且詳細地檢討異常的內容，在加工的完成後詳細地觀察檢測出異常的部位是有效的。SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION When processing abnormalities are frequently detected, the user or manager of the processing equipment must identify the cause of abnormal detection and take countermeasures. In order to specify the cause of abnormality detection, it is necessary to analyze the tendency of abnormality detection such as what kind of abnormality is detected when processing is performed at which position of the workpiece. In order to complete the processing of the workpiece and check the details of the abnormality in detail, it is effective to observe in detail the location where the abnormality was detected after the completion of the processing.

因此，雖然必須找到並特定異常之檢測部位，但是要在加工的完成後從被加工物找出異常之檢測部位並不容易。若無法特定異常之檢測部位，要觀察該檢測部位會變得困難。亦即，有下述需求：即使在被加工物的加工後仍然想要適當地特定出異常之檢測部位。Therefore, although it is necessary to find and specify the abnormality detection part, it is not easy to find the abnormality detection part from the workpiece after the processing is completed. If the detection site of the abnormality cannot be specified, it will be difficult to observe the detection site. That is, there is a need to appropriately specify an abnormality detection site even after the workpiece is processed.

本發明是有鑒於所述問題而作成的發明，其目的在於提供一種被加工物的加工方法，前述加工方法對被加工物的加工時檢測出異常的情況，即使在加工後仍然可容易地進行檢測出異常的位置的特定。 用以解決課題之手段The present invention was made in view of the above-mentioned problems, and its object is to provide a processing method of a workpiece, which can be easily performed even after the processing of the workpiece when an abnormality is detected. The location where the abnormality was detected is specified. means to solve problems

根據本發明的一態樣，可提供一種加工方法，是將設定有複數條加工預定線的被加工物沿著該加工預定線來加工，前述加工方法的特徵在於：具備有：膠帶黏貼步驟，在被加工物的被黏貼面上黏貼比該被黏貼面的直徑更大的直徑之膠帶；保持步驟，在具有保持面的保持工作台的該保持面上以將該被黏貼面側朝向該保持面的狀態來載置被加工物，而隔著該膠帶將該被加工物保持於保持工作台上；及加工步驟，以加工單元將該保持工作台上所保持的該被加工物沿著該加工預定線來加工，在該加工步驟中，是實施該被加工物的加工並且監視有無該加工之異常，且在已檢測出該加工之異常的情況下，在已檢測出該加工之異常的加工預定線的延長線上對該膠帶形成標記。According to one aspect of the present invention, there is provided a processing method in which a workpiece having a plurality of planned processing lines is processed along the planned processing lines. Paste a tape having a larger diameter than the diameter of the pasted surface on the pasted surface of the workpiece; holding step, on the holding surface of the holding table with a holding surface, the side of the pasted surface faces the holding surface The state of the surface to be processed is placed, and the processed object is held on the holding table through the adhesive tape; In this processing step, the processing of the workpiece is carried out and the abnormality of the processing is monitored, and if the abnormality of the processing has been detected, the abnormality of the processing is detected. A mark is formed on the adhesive tape on the extension of the planned processing line.

在本發明的一態樣中，亦可將該標記以該加工單元來形成。又，在該加工步驟中，亦可藉由確認加工中所形成的加工痕跡，來監視有無該加工之異常。 發明效果In an aspect of the present invention, the mark can also be formed by the processing unit. In addition, in this processing step, the presence or absence of abnormalities in the processing can also be monitored by checking the processing traces formed during the processing. Invention effect

本發明的一態樣之加工方法具備：膠帶黏貼步驟，在被加工物的被黏貼面上黏貼比該被黏貼面的直徑更大的直徑之膠帶；及加工步驟，將被加工物沿著加工預定線來加工。在該加工步驟中，是實施該被加工物的加工並且監視有無該加工之異常。並且，在已檢測出該加工之異常的情況下，在已檢測出該加工之異常的加工預定線的延長線上對該膠帶形成標記。A processing method according to one aspect of the present invention includes: a tape sticking step of sticking a tape with a diameter larger than the diameter of the sticking surface on the sticking surface of the workpiece; Scheduled line to process. In this processing step, the processing of the workpiece is carried out and the presence or absence of abnormalities in the processing is monitored. And, when the processing abnormality has been detected, a mark is formed on the adhesive tape on the extension line of the processing schedule line in which the processing abnormality has been detected.

因此，以加工單元沿著全部的加工預定線實施被加工物的加工後，可以藉由確認形成於膠帶的標記，來特定已檢測出加工之異常的加工預定線。並且，可以藉由從該加工預定線的一端到另一端來觀察被加工物，來特定已檢測出加工之異常的位置。因為在被加工物上設定有數量較多的加工預定線，所以藉由特定已檢測出加工之異常的加工預定線，即可大幅地節省去特定檢測出異常的位置之勞務。Therefore, after processing the workpiece along all the planned processing lines by the processing unit, it is possible to identify the planned processing line in which the abnormality of the processing has been detected by checking the marks formed on the tape. And, by observing the workpiece from one end to the other end of the planned processing line, the position where the abnormality of the processing has been detected can be specified. Since a large number of planned processing lines are set on the workpiece, by specifying the planned processing line where the abnormality has been detected, the labor of specifying the position where the abnormality is detected can be greatly saved.

從而，藉由本發明，可提供一種被加工物的加工方法，前述加工方法對被加工物的加工時檢測出異常的情況，即使在加工後仍然可容易地進行已檢測出異常的位置的特定。Therefore, according to the present invention, it is possible to provide a processing method of a workpiece that can easily identify the position where the abnormality has been detected even after processing when an abnormality is detected during processing of the workpiece.

用以實施發明之形態 參照附加圖式，說明本發明的一個態樣之實施形態。在本實施形態之加工方法中，是以加工裝置來加工被加工物。圖1是示意地顯示本實施形態之加工方法的被加工物之一例的立體圖。Embodiments for Carrying Out the Invention Referring to the attached drawings, an embodiment of one aspect of the present invention will be described. In the processing method of this embodiment, the workpiece is processed by a processing device. Fig. 1 is a perspective view schematically showing an example of a workpiece in the processing method of the present embodiment.

被加工物即晶圓1是例如以矽等的半導體材料所形成之圓板狀的晶圓。再者，被加工物並非限定於此，亦可為例如以玻璃或藍寶石等所構成的基板。對被加工物之材質、形狀、構造等並未限制，亦可為例如以陶瓷、樹脂、金屬等的材料所形成之基板、以及矩形之基板來作為被加工物。The wafer 1 which is a workpiece is a disk-shaped wafer formed of a semiconductor material such as silicon, for example. Furthermore, the object to be processed is not limited thereto, and may be, for example, a substrate made of glass or sapphire. The material, shape, structure, etc. of the object to be processed are not limited, and substrates made of materials such as ceramics, resin, and metal, and rectangular substrates may also be used as the object to be processed.

於晶圓1的正面1a側，設定有交叉之複數條加工預定線(切割道)3，且在以加工預定線3所區劃出的各區域中形成有IC(積體電路，Integrated Circuit)、LSI(大型積體電路，Large Scale Integration)等的元件5。沿著加工預定線3分割晶圓1後，即可以形成一個個的元件晶片。On the front surface 1a side of the wafer 1, a plurality of crossing planned processing lines (dicing lines) 3 are set, and IC (Integrated Circuit, Integrated Circuit), Components 5 such as LSI (Large Scale Integration). After the wafer 1 is divided along the planned processing line 3, individual element wafers can be formed.

在以加工裝置來加工晶圓1之前，可在晶圓1的背面1b黏貼已貼在環狀的框架9的膠帶7。晶圓1、環狀的框架9、及膠帶7會形成構成一體的框架單元。晶圓1是透過膠帶7而受到框架9所支撐，且以框架單元的狀態被搬入至加工裝置的內部的保持工作台上。晶圓1是以背面1b側朝向保持工作台的保持面之狀態來載置於保持面上，且隔著該膠帶7來保持於保持工作台4上。Before the wafer 1 is processed by the processing apparatus, the adhesive tape 7 attached to the ring-shaped frame 9 may be pasted on the back surface 1 b of the wafer 1 . The wafer 1, the ring-shaped frame 9, and the adhesive tape 7 form an integral frame unit. The wafer 1 is supported by the frame 9 through the adhesive tape 7, and carried into the holding table inside the processing apparatus in the state of a frame unit. Wafer 1 is placed on the holding surface of the holding table with the rear surface 1 b side facing the holding surface of the holding table, and is held on the holding table 4 through the adhesive tape 7 .

再者，膠帶7亦可黏貼於晶圓1的正面1a。在此情況下，該正面1a會成為膠帶7的被黏貼面。亦即，以正面1a側朝向保持工作台的保持面之狀態並隔著膠帶7來將晶圓1載置於保持工作台上，而將晶圓1保持於該保持工作台。Furthermore, the adhesive tape 7 can also be pasted on the front surface 1 a of the wafer 1 . In this case, this front surface 1a becomes the surface to which the tape 7 is stuck. That is, the wafer 1 is placed on the holding table with the front side 1a facing the holding surface of the holding table through the adhesive tape 7, and the wafer 1 is held on the holding table.

環狀的框架9具有比晶圓1的被黏貼面的直徑更大的直徑之開口，膠帶7是在環狀的框架9中張貼成堵塞該開口。因此，在框架單元中是使用比晶圓1的被黏貼面的直徑更大的直徑之膠帶7。並且，在該框架單元中，膠帶7是超出晶圓1的被黏貼面的外周側。The ring-shaped frame 9 has an opening having a larger diameter than the surface of the wafer 1 to be bonded, and the tape 7 is pasted on the ring-shaped frame 9 so as to close the opening. Therefore, the tape 7 having a larger diameter than the surface of the wafer 1 to be bonded is used for the frame unit. In addition, in this frame unit, the tape 7 protrudes beyond the outer peripheral side of the adhered surface of the wafer 1 .

接著，說明對晶圓1進行加工的加工裝置。該加工裝置可為例如磨削裝置、切割裝置、或雷射加工裝置，並將晶圓1沿著加工預定線來加工，而沿著加工預定線來分割晶圓1。在此，說明以切割裝置對晶圓1進行切割加工的情況。圖2是示意地顯示切割裝置2的立體圖。Next, a processing apparatus for processing the wafer 1 will be described. The processing device can be, for example, a grinding device, a cutting device, or a laser processing device, and processes the wafer 1 along the planned processing line, and divides the wafer 1 along the planned processing line. Here, a case where wafer 1 is diced by a dicing device will be described. FIG. 2 is a perspective view schematically showing the cutting device 2 .

切割裝置2具備支撐各構成要素的基台4。在基台4上的前方側設置有可在X軸方向上移動的X軸移動工作台6。在基台4上，配設有與X軸方向平行的一對X軸導軌8，在X軸導軌8上以可滑動的方式安裝有X軸移動工作台6。The cutting device 2 includes a base 4 that supports each component. An X-axis movable table 6 movable in the X-axis direction is provided on the front side of the base 4 . A pair of X-axis guide rails 8 parallel to the X-axis direction are disposed on the base 4 , and an X-axis movable table 6 is slidably mounted on the X-axis guide rails 8 .

在X軸移動工作台6的下表面側設有螺帽部(圖未示)，在此螺帽部中螺合有與X軸導軌8平行的X軸滾珠螺桿10。在X軸滾珠螺桿10的一端部連結有X軸脈衝馬達12。當以X軸脈衝馬達12使X軸滾珠螺桿10旋轉時，X軸移動工作台6即沿著X軸導軌8在X軸方向上移動。A nut part (not shown) is provided on the lower surface side of the X-axis movable table 6, and an X-axis ball screw 10 parallel to the X-axis guide rail 8 is screwed into the nut part. An X-axis pulse motor 12 is connected to one end of the X-axis ball screw 10 . When the X-axis ball screw 10 is rotated by the X-axis pulse motor 12 , the X-axis moving table 6 moves in the X-axis direction along the X-axis guide rail 8 .

在X軸移動工作台6的上方設置有用於保持晶圓1之保持工作台14。於保持工作台14的上表面配設有多孔質構件，且該多孔質構件的上表面成為保持晶圓1的保持面14a。保持工作台14於外周部具備夾持框架9之夾具14b。A holding table 14 for holding the wafer 1 is provided above the X-axis moving table 6 . A porous member is disposed on the upper surface of the holding table 14 , and the upper surface of the porous member serves as a holding surface 14 a for holding the wafer 1 . The holding table 14 is equipped with the jig|tool 14b which clamps the frame 9 in the outer peripheral part.

該多孔質構件是透過設置於保持工作台14的內部之吸引路(圖未示)而連接於吸引源(圖未示)。當使晶圓1的該被黏貼面朝向保持面14a而將晶圓1載置於該保持面14a上，並使吸引源作動以通過該吸引路及該多孔質構件來使負壓作用於晶圓1時，即可將晶圓1吸引保持於保持工作台14。又，保持工作台14可以繞著與保持面14a垂直的旋轉軸來旋轉。This porous member is connected to a suction source (not shown) through a suction path (not shown) provided inside the holding table 14 . When the wafer 1 is placed on the holding surface 14a with the adhered surface of the wafer 1 facing the holding surface 14a, and the suction source is activated to apply negative pressure to the wafer through the suction path and the porous member. When the wafer 1 is turned, the wafer 1 can be sucked and held on the holding table 14 . In addition, the holding table 14 is rotatable around a rotation axis perpendicular to the holding surface 14a.

於基台4上的後方側配設有可沿著Y軸方向移動的切割單元支撐部16。該切割單元支撐部16是支撐切割單元24。在基台4上配設有與Y軸方向平行的一對Y軸導軌18，在Y軸導軌18上以可滑動的方式安裝有切割單元支撐部16。On the rear side of the base 4, a cutting unit support portion 16 movable along the Y-axis direction is disposed. The cutting unit support portion 16 supports the cutting unit 24 . A pair of Y-axis guide rails 18 parallel to the Y-axis direction is disposed on the base 4 , and a cutting unit support portion 16 is slidably attached to the Y-axis guide rails 18 .

在切割單元支撐部16的下表面側設有螺帽部(圖未示)，在此螺帽部中螺合有與Y軸導軌18平行的Y軸滾珠螺桿20。在Y軸滾珠螺桿20的一端部連結有Y軸脈衝馬達22。當以Y軸脈衝馬達22使Y軸滾珠螺桿20旋轉時，切割單元支撐部16即沿著Y軸導軌18在Y軸方向上移動。A nut portion (not shown) is provided on the lower surface side of the cutting unit support portion 16 , and a Y-axis ball screw 20 parallel to the Y-axis guide rail 18 is screwed into the nut portion. A Y-axis pulse motor 22 is connected to one end of the Y-axis ball screw 20 . When the Y-axis ball screw 20 is rotated by the Y-axis pulse motor 22 , the cutting unit supporting portion 16 moves in the Y-axis direction along the Y-axis guide rail 18 .

在切割單元支撐部16的側面上部設置有與Z軸方向平行的一對Z軸導軌26。在Z軸導軌26上以可滑動的方式安裝有切割單元24。A pair of Z-axis guide rails 26 parallel to the Z-axis direction is provided on the upper side of the cutting unit supporting portion 16 . The cutting unit 24 is slidably mounted on the Z-axis guide rail 26 .

在切割單元24的基端部之面對該切割單元支撐部16的面上，設置有螺帽部(圖未示)，在此螺帽部中螺合有與Z軸導軌26平行的Z軸滾珠螺桿(圖未示)。於Z軸滾珠螺桿的一端部連結有Z軸脈衝馬達28，當以Z軸脈衝馬達28使Z軸滾珠螺桿旋轉時，切割單元24即沿著Z軸導軌26在Z軸方向上移動。On the surface of the base end portion of the cutting unit 24 facing the cutting unit support portion 16, a nut portion (not shown) is provided, and a Z-axis parallel to the Z-axis guide rail 26 is screwed in this nut portion. Ball screw (not shown). A Z-axis pulse motor 28 is connected to one end of the Z-axis ball screw. When the Z-axis ball screw is rotated by the Z-axis pulse motor 28 , the cutting unit 24 moves along the Z-axis guide rail 26 in the Z-axis direction.

於切割單元24的前端部配設有圓環狀之切割刀片32。切割刀片32是裝設在成為旋轉軸之主軸的一端側。於該主軸的另一端側上配設有馬達等之旋轉驅動源，該馬達是藉由使該主軸旋轉而使切割刀片32旋轉。當使切割刀片32旋轉並且定位於規定的高度位置，且使保持工作台14沿著X軸方向移動時，即可以藉由切割刀片32來對保持工作台14所保持的晶圓1進行切割加工。An annular cutting blade 32 is disposed at the front end of the cutting unit 24 . The cutting blade 32 is installed on one end side of a main shaft serving as a rotating shaft. On the other end side of the main shaft, a rotational drive source such as a motor is arranged, and the motor rotates the cutting blade 32 by rotating the main shaft. When the cutting blade 32 is rotated and positioned at a predetermined height position, and the holding table 14 is moved along the X-axis direction, the wafer 1 held by the holding table 14 can be diced by the cutting blade 32 .

又，於切割單元24具備有切割液供給機構。在由切割刀片32所進行的晶圓1的切割加工中，可從切割液供給機構將切割液供給至切割刀片32。該切割液為例如純水。In addition, the cutting unit 24 is provided with a cutting liquid supply mechanism. In the dicing process of the wafer 1 by the dicing blade 32 , the dicing liquid can be supplied to the dicing blade 32 from the dicing liquid supply mechanism. The cutting fluid is, for example, pure water.

在相鄰於切割刀片32的位置上設置有對晶圓1等進行拍攝的相機單元(拍攝單元)30。當使用相機單元30時，即可將切割刀片32定位於適當的位置，以便可以在對晶圓1進行切割加工時實施校準，而沿著加工預定線3來將晶圓1切割加工。又，藉由以相機單元30來拍攝形成於晶圓1的加工痕跡(切割溝)，即可以監視有無切割加工之異常。A camera unit (imaging unit) 30 for imaging the wafer 1 and the like is provided at a position adjacent to the dicing blade 32 . When the camera unit 30 is used, the dicing blade 32 can be positioned at a proper position, so that calibration can be performed when the wafer 1 is diced, and the wafer 1 can be diced along the planned processing line 3 . In addition, by photographing the processing marks (dicing grooves) formed on the wafer 1 with the camera unit 30 , it is possible to monitor the presence or absence of abnormalities in the dicing processing.

只要使切割單元支撐部16在Y軸方向上移動，即可在Y軸方向上將切割刀片32及相機單元30分度進給。又，只要使切割單元24在Z軸方向上移動，切割刀片32及相機單元30即可升降。The cutting blade 32 and the camera unit 30 can be indexed and fed in the Y-axis direction by simply moving the cutting unit support portion 16 in the Y-axis direction. Moreover, the cutting blade 32 and the camera unit 30 can be raised and lowered only by moving the cutting unit 24 in the Z-axis direction.

在切割裝置2的前面配設有兼作為顯示單元、及輸入單元的觸控面板34。於該觸控面板34中顯示有加工條件或加工狀況等。又，切割裝置2的使用者或管理者等可以藉由該觸控面板34將加工條件或各種的指示等輸入切割裝置2。A touch panel 34 serving also as a display unit and an input unit is arranged on the front surface of the cutting device 2 . Processing conditions, processing conditions, and the like are displayed on the touch panel 34 . Moreover, a user or a manager of the cutting device 2 can input processing conditions or various instructions into the cutting device 2 through the touch panel 34 .

接著說明本實施形態之加工方法。在此，作為一例而說明使用切割裝置2來對晶圓1進行切割加工的加工方法。Next, the processing method of this embodiment will be described. Here, a processing method of dicing the wafer 1 using the dicing device 2 will be described as an example.

首先，實施膠帶黏貼步驟，是在被加工物即晶圓1的背面1b(被黏貼面)上黏貼膠帶。在圖1中示意地顯示已黏貼有膠帶7的晶圓1。沿著加工預定線3對晶圓1進行切割加工以將晶圓1分割成一個個的元件晶片時，所形成的一個個的元件晶片是被膠帶7所支撐。First, the tape sticking step is carried out to stick a tape on the back surface 1b (surface to be stuck) of the wafer 1 which is the object to be processed. A wafer 1 to which an adhesive tape 7 has been attached is schematically shown in FIG. 1 . When the wafer 1 is diced along the planned processing line 3 to divide the wafer 1 into individual element wafers, the formed individual element wafers are supported by the tape 7 .

在本實施形態之加工方法中，是在膠帶黏貼步驟之後實施保持步驟。在保持步驟中，是隔著膠帶7將被加工物即晶圓1保持於切割裝置2的保持工作台14上。圖3(A)是示意地顯示保持步驟的截面圖。In the processing method of this embodiment, the holding step is carried out after the tape sticking step. In the holding step, the wafer 1 , which is the workpiece, is held on the holding table 14 of the dicing device 2 through the adhesive tape 7 . Fig. 3(A) is a sectional view schematically showing a holding step.

在保持步驟中，首先，是將晶圓1搬入切割裝置2，其中前述晶圓1在背面1b側黏貼有已貼在框架9的膠帶7，且以正面1a側朝向上方的狀態隔著膠帶7將晶圓1載置於保持工作台14的保持面14a上。接著，使保持工作台14的吸引源作動，以使負壓作用於晶圓1，藉此使晶圓1吸引保持在保持工作台14上。又，使夾具14b夾持框架9。In the holding step, first, the wafer 1 is carried into the dicing device 2, wherein the wafer 1 is pasted with the tape 7 attached to the frame 9 on the back side 1b side, and the front side 1a side faces upward through the tape 7. Wafer 1 is placed on holding surface 14 a of holding table 14 . Next, the suction source of the holding table 14 is operated to apply negative pressure to the wafer 1 , whereby the wafer 1 is sucked and held on the holding table 14 . Also, the frame 9 is clamped by the jig 14b.

在本實施形態之加工方法中，接著是實施加工步驟。圖3(B)是示意地顯示加工步驟的截面圖。在加工步驟中，是藉由裝設在切割單元24的切割刀片32，將保持工作台14上所保持的晶圓1沿著加工預定線3來切割加工。In the processing method of this embodiment, a processing step is performed next. Fig. 3(B) is a sectional view schematically showing a processing step. In the processing step, the wafer 1 held on the holding table 14 is diced along the planned processing line 3 by the dicing blade 32 installed in the dicing unit 24 .

在加工步驟中，首先，是使保持工作台14移動至切割單元24的下方之區域，而繞著沿垂直於保持面14a的方向之軸使保持工作台14旋轉，並使加工預定線3的伸長方向與X軸方向(加工進給方向)一致。並且，在該加工預定線3的延長線之上方將切割刀片32定位成使切割刀片32可以沿著加工預定線3來對晶圓1進行加工。此時，相機單元30亦可用於確認晶圓1的加工預定線3的位置或方向而使用。In the processing steps, at first, the holding table 14 is moved to the area below the cutting unit 24, and the holding table 14 is rotated around the axis perpendicular to the direction of the holding surface 14a, and the direction of the processing scheduled line 3 is The elongation direction coincides with the X-axis direction (machining feed direction). Furthermore, the dicing blade 32 is positioned above the extension line of the planned processing line 3 so that the dicing blade 32 can process the wafer 1 along the planned processing line 3 . At this time, the camera unit 30 may also be used for confirming the position or direction of the planned processing line 3 of the wafer 1 .

接著，藉由使主軸旋轉以使切割刀片32旋轉，且使切割刀片32下降成使切割刀片32的下端之高度位置變得比晶圓1的背面1b之高度位置更低。並且，當沿著X軸方向將保持工作台14加工進給並使切割刀片32切入晶圓1時，即可沿著加工預定線3來對晶圓1進行切割加工。Then, the dicing blade 32 is rotated by rotating the main shaft, and the dicing blade 32 is lowered so that the height position of the lower end of the dicing blade 32 becomes lower than the height position of the back surface 1 b of the wafer 1 . Furthermore, when the holding table 14 is fed along the X-axis direction and the dicing blade 32 is cut into the wafer 1 , the wafer 1 can be diced along the planned processing line 3 .

沿著一條加工預定線3對晶圓1進行切割加工後，使切割單元24在Y軸方向上移動並同樣地沿著其他加工預定線3相繼地對晶圓1進行切割加工。並且，沿著與一個方向平行地排列的全部的加工預定線3對晶圓1進行切割加工後，使保持工作台14旋轉，並沿著於其他方向上排列的加工預定線3來同樣地實施切割加工。如以上，沿著全部的加工預定線3對晶圓1進行切割加工。After the wafer 1 is diced along one planned processing line 3 , the dicing unit 24 is moved in the Y-axis direction and similarly, the wafer 1 is sequentially diced along the other planned processing lines 3 . Then, after dicing the wafer 1 along all the planned processing lines 3 arranged in parallel with one direction, the holding table 14 is rotated, and the same is performed along the planned processing lines 3 arranged in the other direction. cutting processing. As described above, the wafer 1 is diced along all the planned processing lines 3 .

在切割裝置2中配設有各種感測器，有時會在實施加工步驟而對晶圓1進行切割加工的期間檢測出加工之異常。例如，有時可藉由感測器檢測出用以使主軸旋轉的馬達之負載電流值之自容許範圍的脫離。又，當藉由相機單元30拍攝加工痕跡(切割溝)來監視加工痕跡的形成狀況時，有時會檢測到無法容許之規模的晶圓1的缺陷、或加工痕跡的形成位置之無法容許的偏離等之異常。Various sensors are arranged in the dicing device 2 , and processing abnormalities may be detected during the dicing process of the wafer 1 during the processing step. For example, it is sometimes possible to detect a departure from the allowable range of the load current value of the motor for rotating the spindle by a sensor. In addition, when the processing mark (cut groove) is photographed by the camera unit 30 to monitor the formation state of the processing mark, a defect of the wafer 1 on an unacceptable scale or an unacceptable position of the processing mark may be detected. Abnormalities such as deviations.

當以發生加工之異常的加工條件來照原樣繼續進行加工時，會無法適當地對晶圓1進行切割加工，而有在被加工物即晶圓1或所形成的元件晶片、切割刀片32等產生損傷之情況。於是，切割裝置2會在例如已檢測出加工之異常時暫時停止切割加工，且在觸控面板34上顯示異常之檢測及其內容，並向切割裝置2的使用者或管理者等警告並催促對異常之應對處理。When the processing is continued as it is under the abnormal processing conditions, the wafer 1 cannot be properly diced, and the wafer 1 or the formed element wafer, dicing blade 32, etc. In the event of damage. Thus, the cutting device 2 temporarily stops the cutting process when, for example, an abnormality in the processing is detected, and displays the detection of the abnormality and its content on the touch panel 34, and warns and urges the user or manager of the cutting device 2 Handling of exceptions.

已接收到警告的切割裝置2的使用者或管理者等會確認所檢測出的異常之內容，而對切割裝置2或晶圓1施行必要的措施，並使切割裝置2重新開始切割加工。或者，有時是由於將容許範圍過分地設定得較狹窄等之理由而誤檢測為異常。在此情況下，是將該容許範圍適當地重新設定並重新開始切割加工。The user or manager of the dicing device 2 who has received the warning will confirm the content of the detected abnormality, take necessary measures on the dicing device 2 or the wafer 1, and restart the dicing process of the dicing device 2 . Or, it may be falsely detected as an abnormality due to reasons such as setting the allowable range too narrowly. In this case, the allowable range is appropriately reset and the cutting process is restarted.

在頻繁地檢測出加工之異常的情況下，切割裝置2的使用者或管理者必須特定異常之檢測的原因並且採取對策。為了特定異常之檢測的原因，必須對異常之檢測位置或所檢測出的異常之內容等異常之檢測的傾向進行分析。為了完成晶圓1的加工並且詳細地檢討異常的內容，必須在加工的完成後觀察檢測出異常的位置。When processing abnormalities are frequently detected, the user or manager of the cutting device 2 needs to identify the cause of abnormal detection and take countermeasures. In order to specify the cause of abnormality detection, it is necessary to analyze the tendency of abnormality detection, such as the detection position of the abnormality and the content of the detected abnormality. In order to complete the processing of the wafer 1 and examine the contents of the abnormality in detail, it is necessary to observe the position where the abnormality was detected after the processing is completed.

但是，在加工的完成後要從晶圓1的全部的加工預定線3來特定異常之檢測位置並不容易。若無法特定異常之檢測位置，則無法在異常之檢測位置上確認晶圓1的狀態。However, it is not easy to specify abnormality detection positions from all the planned processing lines 3 of the wafer 1 after the processing is completed. If the abnormality detection position cannot be specified, the state of the wafer 1 cannot be confirmed at the abnormality detection position.

於是，在本實施形態之加工方法的加工步驟中，是實施晶圓1的切割加工並且監視有無切割加工之異常。並且，在已檢測出切割加工之異常的情況下，在已檢測出異常的加工預定線3的延長線上對該膠帶7形成標記。Therefore, in the processing steps of the processing method of this embodiment, the dicing process of the wafer 1 is performed and the presence or absence of abnormalities in the dicing process is monitored. Then, when an abnormality in the cutting process is detected, a mark is formed on the adhesive tape 7 on an extension line of the planned processing line 3 in which the abnormality has been detected.

例如，可將有無切割加工之異常的監視藉由相機單元30來實施。將保持工作台14加工進給以沿著一條加工預定線3來實施切割加工後，將保持工作台14往加工進給方向的相反方向進給。然後，不使切割刀片32下降而一邊將保持工作台14朝加工進給方向進給，一邊藉由相機單元30來觀察加工痕跡(切割溝)。圖3(C)是示意地顯示對有無加工之異常進行監視之情形的截面圖。For example, the camera unit 30 can monitor whether there is an abnormality in the cutting process. After the holding table 14 is fed to perform cutting along one planned processing line 3 , the holding table 14 is fed in a direction opposite to the processing feed direction. Then, while the holding table 14 is advanced in the processing feeding direction without lowering the cutting blade 32 , the processing marks (cutting grooves) are observed with the camera unit 30 . Fig. 3(C) is a cross-sectional view schematically showing the state of monitoring the presence or absence of processing abnormality.

在未檢測出加工之異常的情況下，是藉由切割刀片32沿著下一條加工預定線3來對晶圓1進行切割加工。另一方面，在檢測出加工之異常的情況下，是在切割裝置2的觸控面板34中顯示已檢測出異常的情形，並向使用者或管理者等警告並催促進行應對處理。又，在已檢測出異常的加工預定線3的延長線上對該膠帶7形成標記13，以便可以在加工後容易地特定已檢測出異常之位置。When no processing abnormality is detected, the wafer 1 is diced by the dicing blade 32 along the next planned processing line 3 . On the other hand, when an abnormality in processing is detected, it is displayed on the touch panel 34 of the cutting device 2 that the abnormality has been detected, and a warning is given to a user or a manager to prompt a countermeasure. In addition, a mark 13 is formed on the tape 7 on the extension line of the planned processing line 3 in which an abnormality has been detected, so that the position where the abnormality has been detected can be easily specified after processing.

或者，可將例如有無切割加工之異常的監視藉由監視切割單元24的主軸馬達的負載電流值來實施。在晶圓1的切割加工中該負載電流值於容許範圍脫離時，即為檢測出切割加工之異常並停止切割加工。此時，切割裝置2會儲存檢測出切割加工之異常的位置。Alternatively, for example, monitoring of the presence or absence of an abnormality in the cutting process can be implemented by monitoring the load current value of the spindle motor of the cutting unit 24 . When the load current value falls outside the allowable range during the dicing process of the wafer 1, an abnormality in the dicing process is detected and the dicing process is stopped. At this time, the cutting device 2 stores the position at which the abnormality of the cutting process was detected.

之後，讓切割裝置2的使用者或管理者等調整加工裝置2等並重新開始切割加工。並且，沿著全部的加工預定線3都實施切割加工後，依據切割裝置2所儲存之已檢測出異常的位置，在已檢測出異常的加工預定線3的延長線上對該膠帶7形成標記13。再者，標記13亦可在實施加工裝置2等的調整而隨即重新開始切割加工之後形成，又，亦可在剛將切割加工停止後且重新開始切割加工之前形成。Thereafter, the user or manager of the cutting device 2 adjusts the processing device 2 and the like to restart the cutting process. And, after cutting is performed along all the planned processing lines 3, marks 13 are formed on the adhesive tape 7 on the extension of the abnormally detected processing planned lines 3 according to the detected abnormal positions stored in the cutting device 2. . In addition, the mark 13 may be formed immediately after performing adjustment of the processing apparatus 2 etc. and restarting a cutting process, and may be formed immediately after stopping a cutting process and before restarting a cutting process.

圖4是示意地顯示加工步驟的完成後之晶圓1的立體圖。在晶圓1上沿著加工預定線3形成有加工痕跡11(切割溝)，並且在已檢測出異常的加工預定線3的延長線上對膠帶7形成有標記13。該標記13是藉由例如切割單元24的切割刀片32而形成。在標記13的形成預定位置之上方配設切割刀片32，使切割刀片32一邊旋轉一邊下降，並切入膠帶7來形成標記13。FIG. 4 is a perspective view schematically showing the wafer 1 after the processing steps are completed. On the wafer 1 , processing traces 11 (dicing grooves) are formed along the planned processing line 3 , and a mark 13 is formed on the tape 7 on the extension of the planned processing line 3 where an abnormality has been detected. The mark 13 is formed by, for example, the cutting blade 32 of the cutting unit 24 . The cutting blade 32 is disposed above the position where the mark 13 is to be formed, and the cutting blade 32 is lowered while rotating, and cuts into the tape 7 to form the mark 13 .

再者，標記13亦可以藉由其他方法來形成在膠帶7上。例如，切割裝置2亦可具備噴墨噴嘴等之列印機構，且亦可藉由列印來對膠帶7形成標記13。或者，切割裝置2亦可具備標籤貼附機構，且亦可藉由標籤的貼附來對膠帶7形成標記13。Furthermore, the mark 13 can also be formed on the adhesive tape 7 by other methods. For example, the cutting device 2 may also be provided with a printing mechanism such as an inkjet nozzle, and may also form a mark 13 on the adhesive tape 7 by printing. Alternatively, the cutting device 2 may also be equipped with a label sticking mechanism, and the mark 13 may be formed on the adhesive tape 7 by sticking the label.

此外，於標記13中亦可包含下述之資訊：顯示在標記13所示的加工預定線3中，已在哪一個位置檢測出異常的資訊。在例如藉由切割刀片32來形成標記13的情況下，亦可根據該位置來調整切割刀片32的切入深度，使標記13的長度變化來顯示位置。藉由列印來形成標記13的情況下，亦可根據該位置來使列印的顏色變化，藉此顯示該位置。又，亦可將表示該位置的文字、記號、或數字等列印於膠帶7來作為標記13。In addition, the mark 13 may include information indicating at which position an abnormality has been detected in the planned processing line 3 indicated by the mark 13 . For example, when the mark 13 is formed by the cutting blade 32 , the cutting depth of the cutting blade 32 may be adjusted according to the position, and the length of the mark 13 may be changed to indicate the position. When forming the mark 13 by printing, it is also possible to display the position by changing the printed color according to the position. In addition, characters, symbols, numbers, etc. indicating the position may be printed on the adhesive tape 7 as the mark 13 .

如此，當在已檢測出異常的加工預定線3的延長線上形成標記13時，在切割加工完成後要找出異常之檢測部位時，即可以沿著在延長線上形成有標記13的加工預定線3來探索。因此，不需要沿著其他的加工預定線3來實施探索，而容易找出異常之檢測部位。In this way, when the mark 13 is formed on the extension line of the planned processing line 3 where the abnormality has been detected, when the detection part of the abnormality is to be found after the cutting process is completed, it is possible to follow the planned processing line with the mark 13 formed on the extension line. 3 to explore. Therefore, it is not necessary to search along other planned processing lines 3, and it is easy to find out the abnormal detection site.

在本實施形態之加工方法的加工步驟中，亦可更進一步地實施異常座標儲存步驟，前述異常座標儲存步驟是在已檢測出加工之異常時儲存檢測出加工之異常的座標。在此情況下，該加工方法亦可更具備異常顯示步驟，前述異常顯示步驟是將該異常座標與被加工物的整體圖一起顯示在觸控面板34等之顯示機構上。In the processing step of the processing method of this embodiment, the abnormal coordinate storage step may be further implemented. The abnormal coordinate storage step is to store the coordinates of the detected abnormal coordinates when the abnormal processing has been detected. In this case, the processing method may further include an abnormality display step in which the abnormality coordinates are displayed on a display mechanism such as the touch panel 34 together with an overall view of the workpiece.

針對異常座標儲存步驟及異常顯示步驟進行說明。在異常座標儲存步驟中，是例如使切割裝置2儲存晶圓1中的加工之異常的檢測位置的座標。在異常顯示步驟中，是使觸控面板34等之顯示機構將異常之檢測位置與晶圓1的整體圖一起顯示。The procedure for storing abnormal coordinates and the procedure for displaying abnormalities are explained. In the abnormality coordinate storing step, for example, the dicing device 2 is caused to store the coordinates of the detection position of the abnormality in the processing of the wafer 1 . In the abnormality display step, the display means such as the touch panel 34 displays the detected position of the abnormality together with the overall view of the wafer 1 .

在圖5中示意地顯示藉由以相機單元30來拍攝形成於晶圓1的加工痕跡(切割溝)11，以監視有無加工之異常的情況下，在加工步驟中於觸控面板34所顯示的顯示畫面之一例。如圖5所示，在觸控面板34所顯示的顯示畫面36中，可包含例如已設定的異常之檢測條件38、於異常之檢測上所使用的拍攝圖像40、及晶圓1的整體圖42。FIG. 5 schematically shows that by using the camera unit 30 to photograph the processing marks (cutting grooves) 11 formed on the wafer 1 to monitor the presence or absence of processing abnormalities, the display on the touch panel 34 during the processing steps An example of the display screen of . As shown in FIG. 5 , the display screen 36 displayed on the touch panel 34 may include, for example, an abnormality detection condition 38 that has been set, a captured image 40 used for abnormality detection, and the entire wafer 1 Figure 42.

有無加工之異常的監視可藉由例如下述之方式來實施：從所得到的拍攝圖像40檢測加工痕跡11的餘隙、溝寬度、切割位置的偏離、破裂(chipping)尺寸等，並評價各值。切割裝置2的使用者或管理者等可以通過在觸控面板34所顯示的顯示畫面36來適當設定異常之檢測條件38。Monitoring of the presence or absence of processing abnormalities can be carried out, for example, by detecting clearances, groove widths, deviations in cutting positions, chipping sizes, etc. of the processing marks 11 from the obtained photographed image 40, and evaluating each value. The user or manager of the cutting device 2 can appropriately set the abnormality detection condition 38 through the display screen 36 displayed on the touch panel 34 .

在此，餘隙是指從晶圓1所形成的元件晶片之端部到加工痕跡11的距離，溝寬度是指加工痕跡11的寬度。切割位置的偏離是指加工預定線(切割道)的中心線、及加工痕跡11的中心線之偏離，破裂(chipping)尺寸是指從加工痕跡11產生之晶圓1的缺陷的大小。在顯示畫面36中亦可包含說明圖38a，前述說明圖38a是說明在異常之檢測時所評價之值的一部分。Here, the clearance refers to the distance from the end of the element wafer formed on the wafer 1 to the processing trace 11 , and the groove width refers to the width of the processing trace 11 . The deviation of the dicing position refers to the deviation of the centerline of the planned processing line (dicing line) and the centerline of the processing trace 11 , and the chipping size refers to the size of the defect of the wafer 1 generated from the processing trace 11 . The display screen 36 may also include an explanatory diagram 38a, and the foregoing explanatory diagram 38a is for explaining a part of values evaluated at the time of abnormality detection.

在監視有無加工之異常時，是在整體圖42中顯示成為監視對象的加工預定線44。在加工步驟中，在觀測到已脫離容許值之值而檢測出加工之異常的情況下，會實施異常座標儲存步驟，以使切割裝置2儲存已檢測出加工之異常的位置之座標。並且，進一步實施異常顯示步驟，以在觸控面板34所顯示的顯示畫面36上所包含的整體圖42中顯示已檢測出異常的位置46。When the presence or absence of an abnormality in processing is monitored, the planned processing line 44 to be monitored is displayed in the overall view 42 . In the processing step, when a value out of the allowable value is observed and a processing abnormality is detected, an abnormal coordinate storage step is performed so that the cutting device 2 stores the coordinates of the position where the processing abnormality has been detected. Furthermore, an abnormality display step is further implemented to display the abnormally detected position 46 on the overall map 42 included in the display screen 36 displayed on the touch panel 34 .

當實施異常座標儲存步驟後即可以蓄積檢測出異常的位置之座標，且可以於之後在對異常之檢測的傾向進行分析時，使用所蓄積的座標資訊。在異常顯示步驟中，亦可進一步在顯示畫面36上顯示在加工之異常的檢測上所使用的拍攝圖像40。切割裝置2的使用者或管理者等可以依據顯示畫面36所顯示的資訊來應對處理所檢測出的異常。After implementing the abnormal coordinate storage step, the coordinates of the detected abnormal position can be accumulated, and the accumulated coordinate information can be used later when analyzing the tendency of abnormal detection. In the abnormality display step, the captured image 40 used for detecting the abnormality of processing may be further displayed on the display screen 36 . The user or manager of the cutting device 2 can deal with the detected abnormality according to the information displayed on the display screen 36 .

即使在實施異常座標儲存步驟及異常顯示步驟的情況下，仍然會形成下述情形：之後在加工之異常的檢測位置上以顯微鏡等來詳細地解析晶圓1時，要找出加工之異常的檢測位置。在本實施形態之加工方法中，因為是在膠帶7上形成標記13，所以可以使用該標記13來容易地特定加工之異常的檢測位置。Even when the abnormality coordinate storage step and the abnormality display step are carried out, the following situation still occurs: when the wafer 1 is analyzed in detail with a microscope or the like at the detection position of the abnormality in the processing, it is necessary to find out the abnormality in the processing. Detect location. In the processing method of this embodiment, since the marking 13 is formed on the adhesive tape 7, the detection position of the abnormality in processing can be easily specified using this marking 13.

再者，本發明並不限定於上述實施形態之記載，可作各種變更而實施。例如，在上述之實施形態中，雖然說明了藉由相機單元30來觀察加工痕跡11以檢測加工之異常的情況，但是本發明的一態樣並非限定於此。In addition, this invention is not limited to description of the said embodiment, It can change variously and can implement. For example, in the above-mentioned embodiment, although the case where the abnormality of the processing is detected by observing the processing trace 11 with the camera unit 30 has been described, one aspect of the present invention is not limited thereto.

例如，亦可在加工裝置中配設AE(聲波發射，Acoustic Emission)感測器，監視對晶圓等之被加工物進行加工時產生的振動以檢測加工之異常。亦可在加工裝置為對晶圓1進行雷射加工之雷射加工裝置的情況下，監視雷射光束的輸出以檢測加工之異常。For example, an AE (Acoustic Emission) sensor can also be installed in the processing device to monitor the vibration generated when the workpiece such as a wafer is processed to detect processing abnormalities. In the case where the processing device is a laser processing device for performing laser processing on the wafer 1, the output of the laser beam may be monitored to detect processing abnormalities.

又，在本發明的一態樣之加工方法中，亦可對晶圓1以外的被加工物進行加工。例如，亦可對正面未形成有元件5的圓板狀之基板進行加工。在該情況下，亦在已檢測出加工之異常時在黏貼於被加工物的膠帶7上形成標記13，藉此即變得容易在之後特定已檢測出加工之異常的位置。In addition, in the processing method of one aspect of the present invention, a workpiece other than the wafer 1 can also be processed. For example, it is also possible to process a disk-shaped substrate on which no element 5 is formed on the front surface. Also in this case, when the processing abnormality is detected, the mark 13 is formed on the adhesive tape 7 attached to the workpiece, thereby making it easy to specify the position where the processing abnormality was detected later.

此外，本發明的一態樣之加工方法，對於實際上在加工上並未發生異常，而誤檢測為加工之異常的情況也可發揮效果。亦即，在頻繁地發生加工之異常的誤檢測的情況下，若每次都使加工裝置的加工停止，會導致加工的效率降低。於是，必須實施特定誤檢測的原因並變更加工之異常的檢測條件等之對策，以使誤檢測的頻率降低。In addition, the processing method according to one aspect of the present invention is effective even in cases where an abnormality in processing does not actually occur, but is detected as an abnormality in processing by mistake. That is, when erroneous detection of processing abnormality occurs frequently, if the processing of the processing device is stopped every time, the efficiency of processing will be reduced. Therefore, it is necessary to take countermeasures such as specifying the cause of false detections and changing detection conditions of processing abnormalities to reduce the frequency of false detections.

本發明的一態樣之加工方法，即使在誤檢測為加工之異常的情況下，仍然會在膠帶7上形成標記13，藉此變得易於在加工後特定發生誤檢測的位置。因此，變得易於分析誤檢測的原因。The processing method of one aspect of the present invention forms the mark 13 on the adhesive tape 7 even if the false detection is a processing abnormality, thereby making it easy to specify the position where the false detection occurred after processing. Therefore, it becomes easy to analyze the cause of misdetection.

再者，當重複實施本發明的一態樣之加工方法且特定加工之異常的檢測之原因並實施對策後，最終將變得即使實施該加工方法也不會檢測出加工之異常。在即使實施該加工方法也不會檢測出加工之異常的情況下，即可享受到下述效果：可抑制加工之異常的發生來實施加工。Furthermore, when the processing method of one aspect of the present invention is repeatedly carried out and the cause of abnormality detection in processing is identified and countermeasures are taken, the abnormality in processing will not be detected even if the processing method is carried out in the end. In the case where processing abnormalities are not detected even when this processing method is implemented, the effect that processing can be performed while suppressing the occurrence of processing abnormalities can be enjoyed.

另外，上述實施形態之構造、方法等，只要在不脫離本發明的目的之範圍內，均可適當變更而實施。In addition, the structures, methods, etc. of the above-mentioned embodiments can be appropriately changed and implemented within the scope not departing from the purpose of the present invention.

1‧‧‧晶圓1a‧‧‧正面1b‧‧‧背面2‧‧‧切割裝置3、44‧‧‧加工預定線4‧‧‧基台5‧‧‧元件6‧‧‧X軸移動工作台7‧‧‧膠帶8‧‧‧X軸導軌9‧‧‧框架10‧‧‧X軸滾珠螺桿11‧‧‧加工痕跡12‧‧‧X軸脈衝馬達13‧‧‧標記14‧‧‧保持工作台14a‧‧‧保持面14b‧‧‧夾具16‧‧‧切割單元支撐部18‧‧‧Y軸導軌20‧‧‧Y軸滾珠螺桿22‧‧‧Y軸脈衝馬達24‧‧‧切割單元26‧‧‧Z軸導軌28‧‧‧Z軸脈衝馬達30‧‧‧相機單元32‧‧‧切割刀片34‧‧‧觸控面板36‧‧‧顯示畫面38‧‧‧異常之檢測條件38a‧‧‧說明圖40‧‧‧拍攝圖像42‧‧‧整體圖46‧‧‧位置X、Y、Z‧‧‧方向1‧‧‧wafer 1a‧‧‧front side 1b‧‧‧back side 2‧‧‧cutting device 3, 44‧‧‧processing scheduled line 4‧‧‧substrate 5‧‧‧component 6‧‧‧X axis movement work Table 7‧‧‧tape 8‧‧‧X-axis guide rail 9‧‧‧frame 10‧‧‧X-axis ball screw 11‧‧‧processing marks 12‧‧‧X-axis pulse motor 13‧‧‧mark 14‧‧‧holding Table 14a‧‧‧holding surface 14b‧‧‧fixture 16‧‧‧cutting unit support part 18‧‧‧Y-axis guide rail 20‧‧‧Y-axis ball screw 22‧‧‧Y-axis pulse motor 24‧‧‧cutting unit 26‧‧‧Z-axis guide rail 28‧‧‧Z-axis pulse motor 30‧‧‧camera unit 32‧‧‧cutting blade 34‧‧‧touch panel 36‧‧‧display screen 38‧‧‧abnormal detection conditions 38a‧ ‧‧Description Figure 40‧‧‧Photographed Image 42‧‧‧Overall Figure 46‧‧‧Position X, Y, Z‧‧‧Direction

圖1是示意地顯示被加工物的立體圖。 圖2是示意地顯示切割裝置的立體圖。 圖3(A)是示意地顯示保持步驟的截面圖，圖3(B)是示意地顯示加工步驟的截面圖，圖3(C)是示意地顯示對有無加工之異常進行監視之情形的截面圖。 圖4是示意地顯示已完成加工步驟後的晶圓的立體圖。 圖5是示意地顯示顯示畫面之一例的圖。FIG. 1 is a perspective view schematically showing a workpiece. Fig. 2 is a perspective view schematically showing a cutting device. Fig. 3(A) is a cross-sectional view schematically showing a holding step, Fig. 3(B) is a cross-sectional view schematically showing a processing step, and Fig. 3(C) is a cross-sectional view schematically showing the monitoring of the presence or absence of processing abnormalities picture. FIG. 4 is a perspective view schematically showing the wafer after the processing steps have been completed. FIG. 5 is a diagram schematically showing an example of a display screen.

1‧‧‧晶圓 1‧‧‧Wafer

1a‧‧‧正面 1a‧‧‧Front

1b‧‧‧背面 1b‧‧‧back side

3‧‧‧加工預定線 3‧‧‧Processing scheduled line

5‧‧‧元件 5‧‧‧Components

7‧‧‧膠帶 7‧‧‧Tape

9‧‧‧框架 9‧‧‧Framework

11‧‧‧加工痕跡 11‧‧‧Processing marks

13‧‧‧標記 13‧‧‧Mark

Claims (3)

一種加工方法，是將設定有複數條加工預定線的被加工物沿著該加工預定線加工，前述加工方法的特徵在於：具備有：膠帶黏貼步驟，在該被加工物的被黏貼面上黏貼比該被黏貼面的直徑更大的直徑之膠帶；保持步驟，在具有保持面的保持工作台的該保持面上以將該被黏貼面側朝向該保持面的狀態來載置該被加工物，而隔著該膠帶將該被加工物保持於該保持工作台上；及加工步驟，以加工單元將該保持工作台上所保持的該被加工物沿著該加工預定線加工，在該加工步驟中，是實施該被加工物的加工並且監視有無該加工之異常，且在已檢測出該加工之該異常的情況下，在已檢測出該加工之該異常的該加工預定線的延長線上對該膠帶形成標記。 A processing method is to process a workpiece having a plurality of planned processing lines along the planned processing lines, the aforementioned processing method is characterized in that it includes: a step of adhering an adhesive tape to the pasted surface of the processed object An adhesive tape having a diameter larger than the diameter of the surface to be adhered; a holding step of placing the workpiece on the holding surface of a holding table having a holding surface with the side of the surface to be adhered facing the holding surface , and hold the processed object on the holding table through the adhesive tape; and the processing step is to process the processed object held on the holding table with the processing unit along the processing scheduled line, during the processing In the step, the processing of the workpiece is carried out and the presence or absence of abnormality in the processing is monitored, and if the abnormality in the processing has been detected, on the extension line of the scheduled processing line in which the abnormality in the processing has been detected Mark the tape. 如請求項1之加工方法，其中該標記是以該加工單元來形成。 The processing method according to claim 1, wherein the mark is formed by the processing unit. 如請求項1或2之加工方法，其中在該加工步驟中，是藉由確認在該加工中所形成的加工痕跡，來監視有無該加工之該異常。 The processing method according to claim 1 or 2, wherein in the processing step, the presence or absence of the abnormality in the processing is monitored by confirming the processing traces formed in the processing.
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