M310440 八、新型說明： .、 【新型所屬之技術領域】 ‘ 本創作係關於一種具有標記之晶圓，更特別有關於一種熱 硬化墨水標記之晶圓。 【先前技術】 在半導體製程中，隨著晶圓尺寸增大及元件尺寸縮小，一 片晶圓可依需要劃分為數千個相同或不同的晶粒。由於製程設 _計或材料本身的特性，最後完成的晶圓具有正常晶粒及缺陷晶 粒。一般係以測試機台與探針卡(Probe Card)來測試晶圓上每 一個晶粒，以確保晶粒的電氣特性與效能符合設計規格。在測 4過程中若發現缺陷晶粒則需進行標記，包括以墨水喷塗於缺 陷晶粒上、以電子搶或雷射使缺陷晶粒產生刻痕、或以電腦記 錄整片晶圓上正常晶粒及缺陷晶粒的位置。而定位缺陷晶粒位 置的工作，則稱之為晶圓圖表(wafer map)。 以墨水標記缺陷晶粒的方法有不少缺點，比如適合作為標 _記之墨水並不多、墨水除了標記缺陷晶粒外也可能會污染其他 正常晶粒、墨水本身或搭配墨水使用的溶劑可能損壞晶粒、清 除墨水的溶劑一般都相當危險，有工業安全上的顧慮。雖然以 電腦記錄晶圓圖表的方式較簡單也較乾淨，但仍有一些缺點， 比如：不同的晶圓具有不同的晶圓圖表、電腦内的晶圓圖表無 法準確對位至實際晶圓、晶圓圖表本身可能損壞甚至完全遺失 (因電腦操作不當或人為疏忽）。而電子槍或雷射刻痕的設備雖 然曰漸普及，但此記號在產生及辨別上均需依賴機器，難以由 肉眼直接判斷。因此，雖然以墨水標記缺陷晶粒的方法具有上 0119~A21692TWF(N2)；Princeton9519;hsuhuche 5 M310440 述的那些缺點，但一般半導體廠仍以墨水輔助其他無墨水之標 記方法。 習知技藝中經測試並以墨水進行標記之缺陷晶粒，經切割 後將與正常晶粒分開。但近來一些新的半導體製程，例如，在 晶粒測試並以墨水標記後需要塗上螢光劑再進行切割揀選之 工作，採用習知墨水進行標記之缺陷晶粒則會發生問題。因為 一般常見之用於標記缺陷晶粒的墨水會溶解於螢光劑，在切割 後無法以墨水記號分辨缺陷晶粒與正常晶粒的差別，也就無法 _將正常晶粒揀選出來進行後續利用。目前亟需新的墨水組合物 以解決習知墨水記號溶解於後續製程所用之試劑（如螢光劑） 此問題。 【新型内容】 為解決標記缺陷晶粒之墨水會溶解於後續製程中使用的 試劑之問題，本創作提供一種具有標記之晶圓，包括晶圓，具 有正常晶粒及至少一缺陷晶粒；以及晶圓標記，塗佈於至少一 缺陷晶粒上；其中該晶圓標記為一熱硬化之墨水組合物。 m 胃 【實施方式】 第1圖係本創作較佳實施例中具有標記之晶圓的示意 圖，包括晶圓10，其具有正常晶粒12及缺陷晶粒13 ;以及晶 圓標記14，位於該些缺陷晶粒13上。依照本創作之一重要特 徵，此晶圓標記為一熱硬化之墨水組合物。熱硬化之墨水組合 物較佳為熱硬化墨水與有機溶劑之組合物，合適之熱硬化墨水 包含色料、熱硬化樹脂、熱起始劑等物質’如MARKEM®所 售之4408 Series INK;而有機溶劑較佳為丙酮、乙醇、異丙醇、 0119-A21692TWF(N2)；Princeton9519；hsuhuche 6 M310440 乙酸乙醋、或上述之組合。上述之熱硬化墨水組合物中，熱硬 化墨水與有機溶劑的比例較佳介於約9:1至7:3之比例區間 内。太濃稠的熱硬化之墨水組合物在利用喷嘴進行喷墨將熱硬 化之墨水組合物塗佈於缺陷晶粒時易堵塞喷嘴；太稀釋之熱硬 化之墨水組合物則會影響後續的熱硬化製程，且喷墨時容易溢 流至正常晶粒，產生標記上的錯誤。在本創作中，偵測晶粒缺 陷的方法並無特別限制，可為一般常見之偵測方法如探針偵 測，或將晶圓置於高溫高電壓的過負荷環境的崩壓法(burn-in)。 I 經過檢測及喷墨後，將整片晶圓連同墨水記號於常壓下置 入烘箱使墨水組合物熱硬化，較佳之溫度約介於150_180°C， 較佳之時間約介於1.5-2.5小時。最後將晶圓取出，晶圓上之 缺陷晶粒具有標記，且此標記不溶於後續製程之試劑如有機溶 劑、水、螢光劑、或上述之組合。如此一來，即使塗上後續製 程之試劑如螢光劑，晶圓標記亦不會溶解且得以保留至切割 後，使後續揀選正常晶粒的工作得以正常運作。 雖然本創作已以數個較佳實施例揭露如上，然其並非用以 | P限定本創作，任何所屬技術領域中具有通常知識者，在不脫離 本創作之精神和範圍内，當可作任意之更動與潤飾，因此本創 作之保護範圍當視後附之申請專利範圍所界定者為準。 0119-A21692TWF(N2)；Princeton9519；hsuhuche 7 M310440 【圖式簡單說明】 第1圖係本創作較佳實施例中具有標記之晶圓的示意圖。 【主要元件符號說明】 10〜晶圓， 12〜正常晶粒， 13〜缺陷晶粒， 14〜晶圓標記。M310440 VIII. New description: ., [New technical field] ‘This creation is about a wafer with marking, more specifically a wafer with a heat-hardened ink marking. [Prior Art] In the semiconductor process, as wafer size increases and component size shrinks, a wafer can be divided into thousands of identical or different dies as needed. Due to the characteristics of the process design or the material itself, the final wafer has normal grains and defective crystal grains. Each die on the wafer is typically tested with a test machine and a Probe Card to ensure that the electrical characteristics and performance of the die meet the design specifications. If defects are found in the process of measurement 4, they need to be marked, including spraying ink on the defective grains, causing the defects to be scored by electronic robbing or laser, or recording the whole wafer on the computer. The location of the grains and defective grains. The work of locating the defective grain position is called a wafer map. There are many disadvantages in the method of marking defective crystal grains with ink. For example, there is not much ink suitable for marking as a mark, and the ink may contaminate other normal crystal grains, the ink itself or the solvent used with the ink in addition to marking the defective crystal grains. Solvents that damage the die and remove the ink are generally quite dangerous and have industrial safety concerns. Although the way to record wafer charts by computer is simpler and cleaner, there are still some shortcomings, such as different wafers with different wafer charts, wafer charts in the computer cannot be accurately aligned to the actual wafer, crystal The circle chart itself may be damaged or even completely lost (due to improper computer operation or human negligence). While electronic guns or laser-scratched devices are becoming more popular, this mark relies on machines for generation and identification, and is difficult to judge directly by the naked eye. Therefore, although the method of marking defective crystal grains with ink has the disadvantages described above in the above-mentioned 0119~A21692TWF(N2); Princeton9519; hsuhuche 5 M310440, the general semiconductor factory still uses ink to assist other ink-free marking methods. Defective grains that have been tested and labeled with ink in the prior art are separated from the normal grains after being cut. However, some recent semiconductor processes, for example, after grain testing and ink marking, need to be coated with a phosphor and then subjected to cutting and sorting, and defective crystal grains marked with conventional inks may cause problems. Since the commonly used ink for marking defective crystal grains is dissolved in the fluorescent agent, the difference between the defective crystal grains and the normal crystal grains cannot be distinguished by the ink mark after the cutting, and the normal crystal grains cannot be sorted for subsequent use. . There is a need for new ink compositions to address the problem of conventional ink markings being dissolved in reagents (such as phosphors) used in subsequent processes. [New content] In order to solve the problem that the ink of the marked defective crystal grain is dissolved in the reagent used in the subsequent process, the present invention provides a labeled wafer, including a wafer, having a normal crystal grain and at least one defective crystal grain; A wafer mark is applied to at least one defective die; wherein the wafer is marked as a thermally hardened ink composition. m stomach [Embodiment] FIG. 1 is a schematic view of a wafer having a mark in a preferred embodiment of the present invention, including a wafer 10 having a normal crystal grain 12 and a defective crystal grain 13; and a wafer mark 14 located therein These defects are on the grain 13. In accordance with one of the important features of the present work, the wafer is labeled as a thermally hardened ink composition. The thermally hardened ink composition is preferably a combination of a heat-curable ink and an organic solvent, and the suitable heat-curable ink comprises a colorant, a thermosetting resin, a hot starter, etc., such as the 4408 Series INK sold by MARKEM®; The organic solvent is preferably acetone, ethanol, isopropanol, 0119-A21692TWF (N2); Princeton 9519; hsuhuche 6 M310440 ethyl acetate, or a combination thereof. In the above heat-curable ink composition, the ratio of the heat-hardening ink to the organic solvent is preferably in the range of about 9:1 to 7:3. An ink composition that is too thick and hard-cured is likely to clog the nozzle when the ink composition is thermally sprayed by a nozzle to apply the thermally hardened ink composition to the defective crystal grains; the thermally hardened ink composition that is too diluted affects the subsequent thermal hardening. The process is easy to overflow to normal crystal grains when ink is ejected, resulting in a mark error. In the present invention, the method for detecting the grain defect is not particularly limited, and may be a common detection method such as probe detection, or a collapse method in which the wafer is placed in an overload environment of high temperature and high voltage (burn) -in). After the detection and inkjet, the entire wafer and the ink mark are placed in an oven under normal pressure to thermally harden the ink composition, preferably at a temperature of about 150-180 ° C, preferably about 1.5-2.5 hours. . Finally, the wafer is removed and the defective grains on the wafer are marked, and the mark is insoluble in a subsequent process such as an organic solvent, water, a fluorescent agent, or a combination thereof. In this way, even if a reagent such as a fluorescent agent is applied to the subsequent process, the wafer mark does not dissolve and remains after cutting, so that the subsequent sorting of the normal die can be performed normally. Although the present invention has been disclosed above in several preferred embodiments, it is not intended to limit the present invention, and any person having ordinary knowledge in the art can be arbitrarily selected without departing from the spirit and scope of the present invention. The changes and refinements of this creation are subject to the definition of the scope of the patent application. 0119-A21692TWF(N2); Princeton9519; hsuhuche 7 M310440 [Simplified Schematic] FIG. 1 is a schematic view of a wafer having a mark in the preferred embodiment of the present invention. [Main component symbol description] 10~ wafer, 12~ normal die, 13~ defect die, 14~ wafer mark.
0119-A21692TWF(N2)；Princeton9519；hsuhuche 80119-A21692TWF (N2); Princeton 9519; hsuhuche 8