TWI775308B - 多光束用的消隱裝置及多束帶電粒子束描繪裝置 - Google Patents

多光束用的消隱裝置及多束帶電粒子束描繪裝置 Download PDF

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Publication number
TWI775308B
TWI775308B TW110104187A TW110104187A TWI775308B TW I775308 B TWI775308 B TW I775308B TW 110104187 A TW110104187 A TW 110104187A TW 110104187 A TW110104187 A TW 110104187A TW I775308 B TWI775308 B TW I775308B
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TW
Taiwan
Prior art keywords
film
insulating film
blanking
blanking device
ground
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TW110104187A
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English (en)
Chinese (zh)
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TW202201446A (zh
Inventor
山下浩
五島嘉国
森田博文
松本裕史
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日商紐富來科技股份有限公司
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Publication of TW202201446A publication Critical patent/TW202201446A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2061—Electron scattering (proximity) correction or prevention methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
TW110104187A 2020-03-18 2021-02-04 多光束用的消隱裝置及多束帶電粒子束描繪裝置 TWI775308B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020047967A JP7359050B2 (ja) 2020-03-18 2020-03-18 マルチビーム用のブランキング装置及びマルチ荷電粒子ビーム描画装置
JP2020-047967 2020-03-18

Publications (2)

Publication Number Publication Date
TW202201446A TW202201446A (zh) 2022-01-01
TWI775308B true TWI775308B (zh) 2022-08-21

Family

ID=77747018

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110104187A TWI775308B (zh) 2020-03-18 2021-02-04 多光束用的消隱裝置及多束帶電粒子束描繪裝置

Country Status (5)

Country Link
US (1) US11355302B2 (enExample)
JP (1) JP7359050B2 (enExample)
KR (1) KR102551087B1 (enExample)
CN (1) CN113495434B (enExample)
TW (1) TWI775308B (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100288938A1 (en) * 2009-05-14 2010-11-18 Ims Nanofabrication Ag Multi-beam deflector array means with bonded electrodes
US8198601B2 (en) * 2009-01-28 2012-06-12 Ims Nanofabrication Ag Method for producing a multi-beam deflector array device having electrodes
US20120273658A1 (en) * 2010-10-26 2012-11-01 Mapper Lithography Ip B.V. Modulation device and charged particle multi-beamlet lithography system using the same
TWI582816B (zh) * 2011-05-30 2017-05-11 瑪波微影Ｉｐ公司 帶電粒子的多個小射束設備以及用於影響及/或控制其中的帶電粒子小射束的軌跡之方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3145149B2 (ja) 1991-10-17 2001-03-12 富士通株式会社 荷電粒子ビーム偏向装置
JP2000114147A (ja) 1998-10-05 2000-04-21 Advantest Corp 荷電粒子ビーム露光装置
JP2001109018A (ja) 1999-10-12 2001-04-20 Matsushita Electric Ind Co Ltd 液晶表示装置およびその駆動方法
KR101051370B1 (ko) * 2003-09-05 2011-07-22 어플라이드 머티리얼즈 이스라엘 리미티드 입자광 시스템 및 장치와 이와 같은 시스템 및 장치용입자광 부품
JP4387755B2 (ja) * 2003-10-14 2009-12-24 キヤノン株式会社 偏向器アレイおよびその製造方法、ならびに該偏向器アレイを用いた荷電粒子線露光装置
JP2005142101A (ja) * 2003-11-10 2005-06-02 Canon Inc 電極基板の製造方法、該電極基板を用いた偏向器、ならびに該偏向器を用いた荷電粒子線露光装置
JP2006332256A (ja) * 2005-05-25 2006-12-07 Canon Inc 配線基板の製造方法
DE102008010123B4 (de) * 2007-02-28 2024-11-28 Ims Nanofabrication Gmbh Vielstrahl-Ablenkarray-Einrichtung für maskenlose Teilchenstrahl-Bearbeitung
CN102668015B (zh) * 2009-10-26 2015-06-17 迈普尔平版印刷Ip有限公司 带电粒子多子射束光刻系统、调节装置及其制造方法
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
US9330881B2 (en) 2014-09-01 2016-05-03 Nuflare Technology, Inc. Blanking device for multi charged particle beams, and multi charged particle beam writing apparatus
JP6553973B2 (ja) 2014-09-01 2019-07-31 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム用のブランキング装置及びマルチ荷電粒子ビーム描画装置
JP6500383B2 (ja) * 2014-10-03 2019-04-17 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置
JP5816739B1 (ja) * 2014-12-02 2015-11-18 株式会社ニューフレアテクノロジー マルチビームのブランキングアパーチャアレイ装置、及びマルチビームのブランキングアパーチャアレイ装置の製造方法
JP6709109B2 (ja) 2016-05-31 2020-06-10 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム照射装置
US10593509B2 (en) * 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198601B2 (en) * 2009-01-28 2012-06-12 Ims Nanofabrication Ag Method for producing a multi-beam deflector array device having electrodes
US20100288938A1 (en) * 2009-05-14 2010-11-18 Ims Nanofabrication Ag Multi-beam deflector array means with bonded electrodes
US20120273658A1 (en) * 2010-10-26 2012-11-01 Mapper Lithography Ip B.V. Modulation device and charged particle multi-beamlet lithography system using the same
TWI582816B (zh) * 2011-05-30 2017-05-11 瑪波微影Ｉｐ公司 帶電粒子的多個小射束設備以及用於影響及/或控制其中的帶電粒子小射束的軌跡之方法

Also Published As

Publication number Publication date
TW202201446A (zh) 2022-01-01
US20210296074A1 (en) 2021-09-23
JP2021150456A (ja) 2021-09-27
CN113495434B (zh) 2024-08-27
US11355302B2 (en) 2022-06-07
KR102551087B1 (ko) 2023-07-04
JP7359050B2 (ja) 2023-10-11
KR20210117159A (ko) 2021-09-28
CN113495434A (zh) 2021-10-12

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