TWI774112B - Substrate transferring device and method for treating substrate using the substrate transferring device - Google Patents
Substrate transferring device and method for treating substrate using the substrate transferring device Download PDFInfo
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
Abstract
本發明涉及基板傳送裝置以及利用其的基板處理方法,其目的在於在裝載和卸載基板時阻斷基板與腔室內部的加熱部之間而最小化基板的熱變形。為了實現本發明的基板傳送裝置包括:機器人主體,配備有產生動力的驅動部;傳送單元,支撐基板而傳送;傳送單元機械臂,構成為一側被緊固到所述機器人主體,在另一側連接有所述傳送單元,並根據所述驅動部的驅動傳送所述傳送單元,從而將所述基板裝載到用於處理基板的腔室或者從所述腔室卸載所述基板;阻斷單元,在裝載或者卸載所述基板時,阻隔加熱所述腔室內部的所述基板的加熱部與所述基板之間而阻斷熱傳遞。The present invention relates to a substrate transfer apparatus and a substrate processing method using the same, and aims to minimize thermal deformation of the substrate by blocking between the substrate and a heating portion inside a chamber when loading and unloading the substrate. In order to realize the substrate transfer apparatus of the present invention, it includes: a robot body equipped with a driving part that generates power; a transfer unit that supports the substrate for transfer; The transfer unit is connected to the side, and transfers the transfer unit according to the driving of the driving part, thereby loading the substrate into a chamber for processing the substrate or unloading the substrate from the chamber; blocking unit and when the substrate is loaded or unloaded, the heat transfer is blocked between the heating part for heating the substrate inside the chamber and the substrate.
Description
本發明涉及基板傳送裝置以及利用其的基板處理方法,更加詳細地,涉及可以在裝載或者卸載基板時阻斷基板與腔室內部的加熱部之間而最小化基板的熱變形的基板傳送裝置以及利用其的基板處理方法。The present invention relates to a substrate transfer apparatus and a substrate processing method using the same, and more particularly, to a substrate transfer apparatus that can minimize thermal deformation of the substrate by blocking the space between the substrate and a heating portion inside the chamber when loading or unloading the substrate, and A substrate processing method using the same.
通常,作為半導體後序工藝的回焊(reflow)工藝為將要被焊接(soldering)的焊料供應到半導體晶片或者PCB,並對該焊料加熱而電連接電子部件或者布線的工藝。為了執行回焊工藝,需要執行加熱焊料的熱處理和加熱後冷卻的熱處理,這種熱處理裝置根據製造商而被製造為多種結構。Generally, a reflow process, which is a subsequent process of semiconductors, is a process of supplying solder to be soldered to a semiconductor wafer or PCB, and heating the solder to electrically connect electronic parts or wirings. In order to perform the reflow process, it is necessary to perform a heat treatment of heating the solder and a heat treatment of cooling after heating, and such heat treatment apparatuses are manufactured in various structures according to manufacturers.
作為與如上所述的熱處理裝置相關的現有技術,有韓國授權專利10-1680071號。As a prior art related to the heat treatment apparatus as described above, there is Korean Granted Patent No. 10-1680071.
在所述授權專利10-1680071號公開有以如下形式構成的熱處理裝置:在基板支撐部的上側配備有對容納在腔室的基板進行加熱的加熱部,在基板支撐部的下側配備有冷卻安置在基板支撐部的基板的底表面的冷卻部,從而可以在一個腔室執行基板的加熱和冷卻處理。The above-mentioned Patent No. 10-1680071 discloses a heat treatment apparatus configured as follows: a heating part for heating a substrate accommodated in a chamber is provided on the upper side of the substrate support part, and a cooling part is provided on the lower side of the substrate support part A cooling part is placed on the bottom surface of the substrate of the substrate support part so that heating and cooling processes of the substrate can be performed in one chamber.
然而,根據所述熱處理裝置,在執行基板的裝載和卸載過程中移送基板期間,會以沒有得到藉由冷卻部的冷卻效果的狀態暴露於從加熱部發散的熱。However, according to the heat treatment apparatus, during the transfer of the substrate in the process of performing the loading and unloading of the substrate, it is exposed to the heat radiated from the heating portion in a state where the cooling effect by the cooling portion is not obtained.
即,在卸載完成基板處理的基板時基板遠離冷卻部而被帶出腔室外部的時期和在將新的基板裝載到腔室時基板被帶入腔室內部向靠近冷卻部的位置移動的時期,基板可能被不必要地加熱而受到熱衝擊。That is, when unloading a substrate after substrate processing, the substrate is brought out of the chamber away from the cooling unit, and when a new substrate is loaded into the chamber, the substrate is brought into the chamber and moved to a position close to the cooling unit. , the substrate may be unnecessarily heated and subject to thermal shock.
據此,可能發生彎曲現象等熱變形而導致基板損傷,並且具有需要額外的冷卻過程等在工藝中出現差錯的問題。According to this, thermal deformation such as a bending phenomenon may occur to cause damage to the substrate, and there is a problem that an error occurs in the process, such as requiring an additional cooling process.
本發明是為瞭解決如上所述的問題而提出的,其目的在於提供一種可以在裝載和卸載基板時阻斷基板與腔室內部的加熱部之間而最小化基板的熱變形的基板傳送裝置以及利用其的基板處理方法。The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to provide a substrate transfer apparatus that can minimize thermal deformation of the substrate by blocking the space between the substrate and a heating portion inside the chamber when loading and unloading the substrate. and a substrate processing method using the same.
為了實現如上所述的目的的基板傳送裝置,構成為包括:機器人主體,配備有產生動力的驅動部;傳送單元,支撐基板而傳送;傳送單元機械臂,構成為一側被緊固到所述機器人主體,在另一側連接有所述傳送單元,並根據所述驅動部的驅動傳送所述傳送單元,從而將所述基板裝載到用於處理基板的腔室或者從所述腔室卸載所述基板;阻斷單元,在裝載或者卸載所述基板時,阻隔加熱所述腔室內部的所述基板的加熱部與所述基板之間而阻斷熱傳遞。A substrate transfer apparatus for achieving the above-described object is configured to include: a robot body equipped with a driving portion that generates power; a transfer unit that supports the substrate for transfer; and a transfer unit robot arm configured to be fastened on one side to the The robot main body is connected with the transfer unit on the other side, and transfers the transfer unit according to the driving of the driving section, thereby loading the substrate into a chamber for processing the substrate or unloading the substrate from the chamber. The substrate; and the blocking unit, which blocks heat transfer between the heating portion for heating the substrate inside the chamber and the substrate when the substrate is loaded or unloaded.
並且,可以構成為還包括:阻斷單元機械臂,一側被緊固到所述機器人主體,在另一側連接有所述阻斷單元,並根據所述驅動部的驅動傳送所述阻斷單元,從而阻隔所述加熱部與所述基板之間,所述傳送單元機械臂和所述阻斷單元機械臂可以構成為相互獨立地被驅動。Also, it may be configured to further include a blocking unit arm, one side is fastened to the robot body, the blocking unit is connected to the other side, and transmits the blocking according to the driving of the driving part unit, so as to block between the heating part and the substrate, the transfer unit robot arm and the blocking unit robot arm may be configured to be driven independently of each other.
並且,所述傳送單元機械臂可以構成為包括:卸載傳送單元機械臂,連接有卸載傳送單元,所述卸載傳送單元對在所述腔室內部完成處理的處理完成基板進行支撐而將其從所述腔室卸載;以及裝載傳送單元機械臂,連接有裝載傳送單元,所述裝載傳送單元對將在所述腔室內部進行處理的待處理基板進行支撐而將其裝載到所述腔室。In addition, the transfer unit robot arm may include an unload transfer unit robot arm to which an unload transfer unit is connected, and the unload transfer unit supports the processed substrate processed inside the chamber and removes it from the chamber. The chamber is unloaded; and a load-transfer unit robot is connected to a load-transfer unit that supports the substrates to be processed to be processed inside the chamber and loads them into the chamber.
並且,所述阻斷單元可以構成為,在裝載所述基板時,在所述基板被帶入所述腔室內部之前被帶入所述腔室,而在卸載所述基板時,在所述基板被帶出所述腔室之後被帶出所述腔室。Further, the blocking unit may be configured to be brought into the chamber before the substrate is brought into the chamber when the substrate is loaded, and may be configured to be brought into the chamber when the substrate is unloaded. The substrate is taken out of the chamber after being taken out of the chamber.
並且,可以構成為,在所述腔室配備有冷卻所述基板的冷卻部,在裝載所述基板時,如果所述基板到達與所述冷卻部相鄰的冷卻位置則所述阻斷單元被帶出所述腔室,而在卸載所述基板時,所述阻斷單元在所述基板從所述冷卻位置被分離之前被帶入所述腔室。In addition, the chamber may be provided with a cooling unit for cooling the substrate, and the blocking unit may be blocked when the substrate reaches a cooling position adjacent to the cooling unit when the substrate is loaded. The chamber is brought out, and when the substrate is unloaded, the blocking unit is brought into the chamber before the substrate is separated from the cooling position.
並且,所述加熱部可以為配備在所述腔室的上部的上部加熱器,所述阻斷單元可以構成為在所述基板的至少一部分位於所述腔室內部的狀態下位於所述基板的上側而阻斷所述基板與所述上部加熱器之間。In addition, the heating unit may be an upper heater provided in an upper portion of the chamber, and the blocking unit may be configured to be located on the side of the substrate in a state where at least a part of the substrate is located inside the chamber. the upper side to block the space between the substrate and the upper heater.
並且,所述阻斷單元構成為一側被緊固在所述機器人主體而與所述機器人主體一起移動。In addition, the blocking unit is configured such that one side is fastened to the robot body and moves together with the robot body.
對利用所述基板傳送裝置的基板處理方法而言,所述方法包括如下步驟:通過阻斷單元阻斷腔室內部的加熱部與基板之間,從而在從所述加熱部到所述基板的熱傳遞被阻斷的狀態下,執行所述基板的裝載;以及通過阻斷單元阻斷腔室內部的加熱部與基板之間,從而在從所述加熱部到所述基板的熱傳遞被阻斷的狀態下,執行所述基板的卸載。For the substrate processing method using the substrate transfer apparatus, the method includes the steps of: blocking the space between the heating part and the substrate inside the chamber by the blocking unit, so that there is no space between the heating part and the substrate. performing loading of the substrate in a state where heat transfer is blocked; and blocking between the heating portion inside the chamber and the substrate by the blocking unit, so that heat transfer from the heating portion to the substrate is blocked In the disconnected state, the unloading of the substrate is performed.
並且,所述阻斷單元可以配備於支撐所述基板而傳送的基板傳送裝置,且通過所述基板傳送裝置的驅動部的驅動而被帶入所述腔室內部或者被帶出所述腔室。In addition, the blocking unit may be provided in a substrate transfer device that supports the substrate and transferred, and may be brought into the chamber or taken out of the chamber by being driven by a drive unit of the substrate transfer device. .
並且,在裝載所述基板時,所述阻斷單元可以在所述基板被帶入所述腔室內部之前被帶入所述腔室,在卸載所述基板時,所述阻斷單元可以在所述基板被帶出所述腔室之後被帶出所述腔室。Also, when the substrate is loaded, the blocking unit may be brought into the chamber before the substrate is brought into the interior of the chamber, and when the substrate is unloaded, the blocking unit may be The substrate is brought out of the chamber after being brought out of the chamber.
並且,可以構成為在所述腔室配備有冷卻所述基板的冷卻部,在裝載所述基板時,如果所述基板到達與所述冷卻部相鄰的冷卻位置,則所述阻斷單元被帶出所述腔室,在卸載所述基板時,所述阻斷單元在所述基板從所述冷卻位置被分離之前被帶入所述腔室。Furthermore, the chamber may be provided with a cooling unit for cooling the substrate, and when the substrate reaches a cooling position adjacent to the cooling unit when the substrate is loaded, the blocking unit may be blocked. The chamber is brought out, and when the substrate is unloaded, the blocking unit is brought into the chamber before the substrate is separated from the cooling position.
並且,所述基板傳送裝置可以包括:傳送單元,支撐所述基板而傳送;傳送單元機械臂,傳送所述傳送單元,並且基板處理方法構成為,所述傳送單元機械臂通過所述驅動部的驅動而傳送所述傳送單元,以裝載或者卸載所述基板。Further, the substrate transfer apparatus may include: a transfer unit for transferring the substrate while supporting the substrate; a transfer unit robot arm for transferring the transfer unit, and the substrate processing method is configured such that the transfer unit robot arm passes the The conveying unit is driven and conveyed to load or unload the substrate.
並且,所述傳送單元和所述傳送單元機械臂可以包括:卸載部,包含卸載傳送單元和卸載傳送單元機械臂;裝載部,包含裝載傳送單元和裝載傳送單元機械臂構成,在裝載所述基板時,所述裝載傳送單元機械臂通過所述驅動部的驅動傳送所述裝載傳送單元,以裝載所述基板,在卸載所述基板時,所述卸載傳送單元機械臂通過所述驅動部的驅動傳送所述卸載傳送單元,以卸載所述基板。In addition, the transfer unit and the transfer unit robot arm may include: an unloading unit including the unloading transfer unit and the unloading transfer unit robot arm; and a loading unit including the loading transfer unit and the loading transfer unit robot. When the loading and conveying unit robot arm is driven by the driving part to transfer the loading and conveying unit to load the substrate, when the substrate is unloaded, the unloading and conveying unit robot arm is driven by the driving part The unloading conveying unit is conveyed to unload the substrate.
並且,所述基板傳送裝置還可以包括:阻斷單元機械臂,傳送所述阻斷單元,並且基板處理方法構成為,所述阻斷單元機械臂通過所述驅動部的驅動傳送所述阻斷單元而將所述傳送單元帶入所述腔室內部或者從所述腔室帶出所述傳送單元。In addition, the substrate transfer apparatus may further include a blocking unit robot that transfers the blocking unit, and the substrate processing method may be configured such that the blocking unit robot transfers the blocking unit by driving the driving unit. unit to bring the transfer unit into or out of the chamber.
並且,所述基板傳送裝置還可以包括:機器人主體,支撐所述阻斷單元機械臂而進行傳送,並且所述基板處理方法構成為,所述機器人主體通過所述驅動部的驅動傳送所述阻斷單元而將所述阻斷單元帶入所述腔室內部,或者從所述腔室帶出所述阻斷單元。In addition, the substrate transfer apparatus may further include a robot main body that supports the blocking unit robot arm for transfer, and the substrate processing method is configured such that the robot main body transfers the blocking unit by driving the driving unit. The blocking unit is brought into the chamber by breaking the unit, or the blocking unit is brought out of the chamber.
並且,在所述腔室可以構成為配備有冷卻所述基板的冷卻部,對被裝載到所述腔室內部的所述基板執行基板處理工藝,並且依次執行通過所述加熱部加熱所述基板的加熱處理和通過所述冷卻部冷卻所述基板的冷卻處理。Also, the chamber may be configured to include a cooling portion for cooling the substrate, perform a substrate processing process on the substrate loaded into the chamber, and sequentially perform heating of the substrate by the heating portion heating treatment and cooling treatment of cooling the substrate by the cooling section.
並且,所述加熱部可以為配備在所述腔室的上部的上部加熱器,所述阻斷單元位於所述上部加熱器的下側,並且構成為阻隔所述基板的上側而阻斷所述基板與所述腔室之間的熱傳遞。In addition, the heating unit may be an upper heater provided on an upper portion of the chamber, and the blocking unit may be located on a lower side of the upper heater, and may be configured to block the upper side of the substrate and block the heat transfer between the substrate and the chamber.
根據本發明,可以提供一種通過配備阻隔加熱部與基板之間而阻斷熱傳遞的阻斷單元來在裝載和卸載基板時通過所述阻斷單元而使基板與加熱部之間被阻斷,從而可以最小化基板的熱變形並防止基板的損傷的基板傳送裝置以及基板傳送方法。According to the present invention, it is possible to provide a blocking unit for blocking the space between the substrate and the heating section by the blocking unit when loading and unloading the substrate by providing the blocking unit that blocks the heat transfer between the heating section and the substrate, Thus, the substrate transfer apparatus and substrate transfer method can minimize thermal deformation of the substrate and prevent damage to the substrate.
以下參照附圖對本發明的優選實施例的構成以及作用進行詳細說明則如下。The structure and function of the preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
參照圖1至圖11說明根據本發明的基板傳送裝置200的第一實施例以及利用其的基板處理方法。A first embodiment of a
根據本發明的基板傳送裝置200包括:機器人主體210,配備有產生動力的驅動部(未示出);傳送單元221、231,支撐基板W而傳送;傳送單元機械臂220、230,構成為一側被緊固到所述機器人主體210,在另一側連接有所述傳送單元221、231,從而通過所述驅動部的驅動而傳送所述傳送單元221、231,進而將所述基板W裝載到用於處理基板的腔室100或者從所述腔室100卸載所述基板W;以及阻斷單元251,在裝載或者卸載所述基板W時阻隔加熱所述腔室100內部的所述基板的加熱部120與所述基板之間,從而阻斷熱傳遞。The
所述腔室100和所述基板傳送裝置200的驅動通過控制部而被控制。The driving of the
所述基板W可以是對應於半導體基板的矽晶片。然而,本發明並不限於此,所述基板W可以為諸如液晶顯示器(LCD:liquid crystal display)、等離子體顯示面板(PDP:plasma display panel)等用作平板顯示裝置的玻璃等透明基板。所述基板W的形狀的尺寸並不限於附圖,可以具有諸如圓形以及四邊形板等多種形狀和尺寸。The substrate W may be a silicon wafer corresponding to a semiconductor substrate. However, the present invention is not limited thereto, and the substrate W may be a transparent substrate such as glass used as a flat panel display device such as a liquid crystal display (LCD), a plasma display panel (PDP), or the like. The size of the shape of the substrate W is not limited to the drawings, and may have various shapes and sizes such as circular and quadrangular plates.
所述腔室100可以為在內部形成有熱處理所述基板W的熱處理空間S的用於處理基板的腔室。The
所述腔室100可以構成為包括:門111,以在裝載或者卸載所述基板W時使所述傳送單元221、231以及所述阻斷單元251可以出入所述腔室100的方式開閉;基板支撐部150,安置所述基板W;所述加熱部120;以及冷卻部160,冷卻所述基板W,並且還可以包括升降所述基板W或者安置有所述基板W的所述基板支撐部150的升降驅動部170。The
所述加熱部120可以為配備在所述腔室100的上部的上部加熱器,並且可以構成為通過所述熱處理空間S而向所述基板W的上表面供熱。所述加熱部120可以構成為照射加熱光的燈形態或者內置有加熱器而輻射熱的板形態等。The
所述冷卻部160為為了將通過所述加熱部120而被加熱處理的基板W冷卻至可以卸載的溫度的構成,可以構成為配備在所述基板支撐部150的下側而從下面冷卻被所述基板支撐部150支撐的所述基板W。所述冷卻部160可以構成為在內部配備有諸如冷卻水流動的冷卻水路(未示出)等去熱單元的形態等。The
所述基板支撐部150可以構成為在其上表面安置所述基板W的形態,並且構成為通過施加到該上表面的真空而使基板W被吸附到所述基板支撐部150,從而維持所述基板W的安置狀態並且固定位置。除了前述的真空吸附方式以外,所述基板W的位置固定也可以變形實施為通過諸如靜電吸盤的靜電吸附方式等。The
所述升降驅動部170可以構成為包括通過馬達或者氣缸等的驅動而被獨立地升降驅動的升降銷171和升降支撐部172。The elevating
所述升降銷171可以構成為從下側支撐所述基板W,並且升降驅動而從所述傳送單元221、231接收所述基板W而將其安置到所述基板支撐部150上或者從所述基板支撐部150分離所述基板W而傳遞給所述傳送單元221、231。The
所述升降支撐部172可以構成為從下側支撐所述基板支撐部150,並且升降驅動而使安置有所述基板W的狀態的所述基板支撐部150靠近所述加熱部120或者使其靠近或者接觸所述冷卻部160。The
將安置有所述基板W的狀態的所述基板支撐部150靠近所述加熱部120的位置稱作所述基板W被加熱的加熱位置a,將靠近或者接觸所述冷卻部160的位置稱作所述基板W被冷卻的冷卻位置b。The position of the
所述升降銷171可以配備為上下貫通所述基板支撐部150和所述冷卻部160的形態,所述升降支撐部172可以配備為上下貫通所述冷卻部160的形態。The
所述機器人主體210可以以通過所述驅動部的驅動而旋轉或者移動的方式構成,並且可以以支撐所述傳送單元221、231和所述傳送單元機械臂220、230以及所述阻斷單元251而移送的方式構成。The
所述傳送單元機械臂220、230可以構成為包括至少一個關節,並且可以通過所述驅動部的驅動而使所述至少一個關節折疊或展開、收縮或者伸長,並且可以以與所述機器人主體210的緊固部為旋轉軸而旋轉。The transfer unit
所述傳送單元221、231可以構成為從下側支撐所述基板W,可以構成為以所述基板W為中心而一側與所述傳送單元機械臂220、230連接且另一側向反側凸出的叉形狀,此外,也可以構成為板形狀等多種形狀和尺寸。The
所述傳送單元221、231和傳送其的所述傳送單元機械臂220、230可以配備為多對,並且可以構成為包括利用卸載傳送單元221和卸載傳送單元機械臂220構成的卸載部221、220和利用裝載傳送單元231和裝載傳送單元機械臂230構成的裝載部231、230。The
據此,可以以如下方式構成為:通過所述卸載部221、220而將在所述腔室100完成處理的處理完成基板從所述腔室100卸載,通過所述裝載部231、230而把將進行處理的待處理基板裝載到所述腔室100。Accordingly, it is possible to configure such that the processed substrates processed in the
所述卸載部221、220和所述裝載部231、230可以實現為同時驅動或者依次驅動,並且可以構成為相互獨立地驅動。The unloading
並且,所述基板傳送裝置200可以構成為還包括:阻斷單元機械臂250,構成為一側緊固在所述機器人主體210,在另一側連接有所述阻斷單元251,從而通過所述驅動部的驅動而傳送所述阻斷單元251而阻隔所述加熱部120與所述基板W之間。In addition, the
所述阻斷單元機械臂250可以如所述傳送單元機械臂220、230一樣構成為包括至少一個關節,並且可以夠成為通過所述驅動部的驅動而使所述至少一個關節折疊或展開,收縮或者伸長,並以與所述機器人主體210緊固的緊固部為旋轉軸而旋轉。The blocking unit
所述阻斷單元機械臂250和所述傳送單元機械臂220、230可以實現為同時驅動或者依次驅動,並且可以構成為相互獨立地驅動。The blocking unit
所述阻斷單元機械臂250可以構成為配備於所述傳送單元機械臂220、230的上側,從而在裝載或者卸載所述基板W時,使所述阻斷單元251位於所述基板W的上側而阻隔作為上部加熱器的所述加熱部120與所述基板W之間。The blocking
所述阻斷單元251可以利用高耐熱性、耐化學性和耐腐蝕性的材質構成,以承受所述腔室100內部的高溫環境以及不與供應到所述腔室100的工藝流體等反應而發生變質或者腐蝕,從而影響基板處理工藝,作為一例,可以利用矽或者不鏽鋼(SUS)。The blocking
並且,所述阻斷單元251可以配備為具有不小於所述基板W的水平面積,以更加有效地阻斷所述加熱部120與所述基板之間的熱傳遞,優選地,可以配備為具有大於所述基板W的水平面積。Also, the blocking
並且,本發明的基板傳送裝置200可以通過在現有的基板傳送裝置結合所述阻斷單元251和所述阻斷單元機械臂250的方式實現,因此可以節省更換現有的基板傳送裝置時產生的費用。In addition, the
在圖11示出有表示利用所述基板傳送裝置200的基板處理方法的順序圖,在圖1至圖10示出有根據圖11所述的基板處理方法的各基板處理步驟的圖。FIG. 11 is a sequence diagram showing a substrate processing method using the
如在圖1所示,基板處理步驟S10為打開所述門111,並將所述阻斷單元251帶入所述腔室100的步驟。As shown in FIG. 1 , the substrate processing step S10 is a step of opening the
隨著所述阻斷單元機械臂250通過所述驅動部的驅動而伸長,所述阻斷單元251可以被帶入所述腔室100,並且位於所述基板支撐部150的上側。As the blocking
根據本步驟S10,由於所述阻斷單元251相比於所述基板W在先被帶入所述腔室100,因此在執行後述的步驟S20的期間內可以有效地阻斷所述基板W與所述加熱部120之間的熱傳遞。According to this step S10, since the blocking
並且,本步驟S10可以構成為與後述的S20同時執行而使所述裝載傳送單元231和所述阻斷單元251被同時帶入所述腔室100,此時,在傳送所述基板W的期間,所述阻斷單元251在所述基板W的上側一起移動,從而可以阻斷來自所述加熱部120的熱傳遞。In addition, this step S10 may be performed at the same time as S20, which will be described later, so that the
如圖2所示,基板處理步驟S20為裝載所述基板W的步驟。As shown in FIG. 2 , the substrate processing step S20 is a step of loading the substrate W.
根據本步驟S20,隨著所述裝載傳送單元機械臂230通過所述驅動部的驅動而伸長,所述裝載傳送單元231傳送所述基板W而被帶入所述腔室100內部,並且在以使所述基板W被安置到所述升降銷171的上端的方式傳遞後,隨著所述裝載傳送單元機械臂230的收縮而被帶出所述腔室100。According to this step S20, as the loading and conveying
此時,所述升降銷171以從所述基板支撐部150的上表面凸出的狀態上升驅動而支撐被所述裝載傳送單元231支撐的所述基板W的下端,從而接收所述基板W,此時,所述基板支撐部150可以處於通過所述升降支撐部172的上升驅動而與所述冷卻部160向上側相隔預定距離的狀態。At this time, the lift pins 171 are driven upward in a state of protruding from the upper surface of the
並且,所述裝載傳送單元231可以構成為通過所述阻斷單元251的下側空間而被傳送,從而防止所述基板W通過所述加熱部120而被加熱。In addition, the loading and conveying
如圖3所示,基板處理步驟S30為將所述基板W被安置到所述基板支撐部150的步驟。As shown in FIG. 3 , the substrate processing step S30 is a step of placing the substrate W on the
根據本步驟S30,所述升降銷171下降驅動而將所述基板W安置到所述基板支撐部150的上表面,在所述基板支撐部150的上表面施加真空而吸附所述基板W。According to this step S30 , the lift pins 171 are driven downward to place the substrate W on the upper surface of the
所述升降銷171可以在所述基板W被安置到所述基板支撐部150之後進一步下降而使其上端位於所述冷卻部160的內側。The lift pins 171 may further descend after the substrate W is placed on the
如圖4所示,基板處理步驟S40為所述基板W位於所述冷卻位置b,並且所述阻斷單元251被帶出所述腔室100的步驟。As shown in FIG. 4 , the substrate processing step S40 is a step in which the substrate W is located at the cooling position b, and the
根據本步驟S40,所述升降支撐部172下降驅動而下降所述基板支撐部150,使其位於所述冷卻位置b,從而將通過所述冷卻部160的冷卻效果應用到所述基板W。According to this step S40 , the lifting
所述阻斷單元251可以在所述基板支撐部150到達所述冷卻位置b之後隨著所述阻斷單元機械臂250的收縮而被帶出所述腔室100。The blocking
即,使所述阻斷單元251構成為在所述基板W被帶入所述腔室100而到達所述冷卻位置b的期間阻隔所述基板W的垂直方向上側,從而可以在所述基板W未被應用通過所述冷卻部160的冷卻效果的狀態下阻斷通過所述加熱部120而被加熱的情形,並且可以防止在所述基板W發生熱變形等損傷的情形。That is, the blocking
並且,如果所述阻斷單元251被完全帶出所述腔室100,則所述門111會被關閉。And, if the
如圖5所示,基板處理步驟S50為執行針對所述基板W的加熱處理的步驟。As shown in FIG. 5 , the substrate processing step S50 is a step of performing heat processing on the substrate W. As shown in FIG.
根據本步驟S50,所述升降支撐部172通過上升驅動而使所述基板支撐部150上升,使其位於所述加熱位置a,從而將通過所述加熱部120的加熱效果應用到所述基板W。According to this step S50 , the
此時,通過所述腔室100上端的氣體供應部140使工藝氣體流入而被所述加熱部120加熱,並通過淋噴頭130而被噴射到所述熱處理空間S,從而執行針對所述基板W的加熱處理工藝,例如,回焊工藝。At this time, the process gas flows in through the
如圖6所示,基板處理步驟S60為執行針對所述基板W的冷卻處理的步驟。As shown in FIG. 6 , the substrate processing step S60 is a step of performing cooling processing on the substrate W. As shown in FIG.
根據本步驟S60,所述升降支撐部172被下降驅動而使所述基板支撐部150下降並位於所述冷卻位置b,從而將通過所述冷卻部160的冷卻效果應用到所述基板W,據此冷卻通過所述步驟S50的熱處理工藝加熱的所述基板W。According to this step S60 , the
如圖7所示,基板處理步驟S70為打開所述門111並將所述阻斷單元251帶入所述腔室100的步驟。As shown in FIG. 7 , the substrate processing step S70 is a step of opening the
隨著通過所述驅動部的驅動而使所述阻斷單元機械臂250伸長,所述阻斷單元251被帶入所述腔室100,並且被佈置在位於所述冷卻位置b的所述基板W的上側。As the
根據本步驟S70,在所述基板W位於所述冷卻位置b的狀態下,通過將所述阻斷單元251帶入所述腔室100,從而可以在執行後述的步驟S80和步驟S90的期間更加有效地阻斷所述基板W與所述加熱部120之間的熱傳遞。According to this step S70 , by bringing the
如圖8所示,基板處理步驟S80為所述基板支撐部150從所述冷卻位置b被分離的步驟。As shown in FIG. 8 , the substrate processing step S80 is a step in which the
根據本步驟S80,所述升降支撐部172上升驅動而使所述基板支撐部150上升,從而使其從所述冷卻位置b分離,據此,在本步驟之後,通過所述冷卻部160的冷卻效果將不被應用到所述基板W。According to this step S80 , the
如圖9所示,基板處理步驟S90為所述基板W被卸載的步驟。As shown in FIG. 9 , the substrate processing step S90 is a step in which the substrate W is unloaded.
根據本步驟S90,隨著通過所述驅動部的驅動而使所述卸載傳送單元機械臂220被拉伸,所述卸載傳送單元221被帶入所述腔室100內部,並且在從所述升降銷171接收到所述基板W而支撐後,隨著所述卸載傳送單元機械臂220的收縮而傳送所述基板W,並且被帶出所述腔室100。According to this step S90, as the unloading conveying unit
此時,施加到所述基板支撐部150的上表面的真空被解除,所述升降銷171以從所述基板支撐部150的上表面凸出的方式上升驅動而將所述基板支撐部150和所述基板W上下隔開,所述卸載傳送單元221向所述基板W與所述基板支撐部150之間移動而支撐所述基板W的下端,從而接收到所述基板W。At this time, the vacuum applied to the upper surface of the
並且,由於所述卸載傳送單元221通過所述阻斷單元251的下側空間而被傳送,因此可以防止所述基板W通過所述加熱部120而被加熱。In addition, since the
並且,本步驟S90可以與後述的S100同時執行,從而構成為從所述腔室100同時帶出所述卸載傳送單元221和所述阻斷單元251,此時,在傳送所述基板W的期間,由於所述阻斷單元251在所述基板W的上側一起移動,因此可以阻斷來自所述加熱部120的熱傳遞。In addition, this step S90 may be performed simultaneously with S100 described later, and the
如圖10所示,基板處理步驟S100為從所述腔室100帶出所述阻斷但願51的步驟。As shown in FIG. 10 , the substrate processing step S100 is a step of taking out the blocking device 51 from the
所述阻斷單元251通過所述驅動部的驅動而隨著所述阻斷單元機械臂250的收縮而被帶出所述腔室100。The blocking
即,通過構成為所述阻斷單元251構成為在所述基板W從冷卻位置b分離而完全帶出所述腔室100的期間阻隔所述基板W的垂直方向上側,從而可以在所述基板W得不到通過所述冷卻部160的冷卻效果的狀態下阻斷通過加熱部120而被加熱,並且可以防止所述基板W發生熱變形等損傷。That is, when the blocking
並且,可以構成為所述裝載傳送單元231和所述阻斷單元251被同時帶入所述腔室100,此時,在傳送所述基板W的期間,所述阻斷單元251可以在所述基板W的上側一起移動,從而阻斷來自所述加熱部120的熱傳遞。In addition, the
並且,在所述腔室100依次連續執行多個基板處理工藝的情形下,可以在執行所述步驟S90之後可以不執行所述步驟S100,而是重復執行所述步驟S20至所述步驟S90。In addition, in the case where the
此時,所述阻斷單元251可以如所述步驟S70所述地在處理完成的所述基板從所述冷卻位置b被分離之前被帶入所述腔室100,並且在依次執行所述步驟S80和所述S90以及所述步驟S20和所述步驟S30的期間維持位置之後,如在所述步驟S40所述地在被帶入所述腔室100的待處理基板到達所述冷卻位置b則會被帶出所述腔室100。At this time, the blocking
並且,可以同時執行所述步驟S90和所述步驟S20。Also, the step S90 and the step S20 may be performed simultaneously.
參照圖12對根據本發明的基板傳送裝置200的第二實施例進行說明。A second embodiment of the
根據第二實施例的基板傳送裝置200遵循根據上述第一實施例的基板傳送裝置200(參照圖1至圖10)的構成,並且在代替卸載部221、220和裝載部231、230而配備有依次執行基板W的裝載以及卸載的一對傳送單元機械臂240和傳送單元241這一點上有差異。The
根據本第二實施例,阻斷單元251可以構成為,在處理完成基板從冷卻位置b被分離之前被帶入腔室100,並且在通過所述傳送單元機械臂240和所述傳送單元241而依次執行處理完成基板的卸載和待處理基板的裝載的期間內維持相應位置,之後如果待處理基板到達冷卻位置b則被帶出所述腔室100。According to the present second embodiment, the blocking
參照圖13對根據本發明的基板傳送裝置200的第三實施例進行說明。A third embodiment of the
根據第三實施例的基板傳送裝置200遵循根據上述第一實施例的基板傳送裝置200(參照圖1至圖10)的構成,然而在構成為阻斷單元261的一側被緊固到所述機器人主體210而與所述機器人主體210一起移動這一點上存在差異。The
根據本第三實施例,所述阻斷單元261隨著所述機器人主體210向所述腔室100方向移動而被帶入所述腔室100內部,並隨著所述機器人主體210向反方向移動而遠離所述腔室,從而可以被帶出所述腔室100。According to the third embodiment, the blocking
如以上所說明,本發明並不限於上述的實施例,可以不脫離本發明的技術思想而被在本發明所述技術領域具有普通知識的人員進行顯而易見的變形實施,並且這些變形實施屬於本發明的範圍。As explained above, the present invention is not limited to the above-mentioned embodiments, and can be implemented by those having ordinary knowledge in the technical field of the present invention without departing from the technical idea of the present invention. Obviously, modifications and implementations belong to the present invention. range.
100:腔室 111:門 120:加熱部 130:淋噴頭 140:氣體供應部 150:基板支撐部 160:冷卻部 170:升降驅動部 171:升降銷 172:升降支撐部 200:基板傳送裝置 210:機器人主體 220:卸載部之卸載傳送單元機械臂 221:卸載部之卸載傳送單元 230:裝載部之裝載傳送單元機械臂 231:裝載部之裝載傳送單元 240:傳送單元機械臂 241:傳送單元 250:阻斷單元機械臂 251:阻斷單元 261:阻斷單元 W:基板 S:熱處理空間 a:加熱位置 b:冷卻位置 S10-S100:步驟100: Chamber 111: Door 120: Heating Department 130: shower head 140: Gas Supply Department 150: Substrate support part 160: Cooling Department 170: Lifting drive part 171: Lifting pin 172: Lifting support part 200: Substrate transfer device 210: Robot body 220: Unloading conveyor unit robotic arm of unloading department 221: Unloading conveying unit of unloading department 230: Loading and conveying unit robotic arm of the loading department 231: Loading and conveying unit of the loading section 240:Transfer unit robotic arm 241: Transmission unit 250: Blocking unit robotic arm 251: Blocking Unit 261: Blocking Unit W: substrate S: heat treatment space a: heating position b: cooling position S10-S100: Steps
圖1是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,在裝載基板之前帶入阻斷單元的步驟的操作狀態圖。 圖2是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,裝載基板的步驟的操作狀態圖。 圖3是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,基板被安置在基板支撐部的步驟的操作狀態圖。 圖4是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,基板被移動至冷卻位置,並且阻斷單元被帶出的步驟的操作狀態圖。 圖5是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,基板被移動至加熱位置而執行基板的加熱處理的步驟的操作狀態圖。 圖6是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,基板被移動至冷卻位置而執行基板的冷卻處理的步驟的操作狀態圖。 圖7是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,在卸載基板之前帶入阻斷單元的步驟的操作狀態圖。 圖8是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,從冷卻位置分離基板的步驟的操作狀態圖。 圖9是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,卸載基板的步驟的操作狀態圖。 圖10是示出在利用根據本發明的第一實施例的基板傳送裝置的基板處理方法中,帶出阻斷單元的步驟的操作狀態圖。 圖11是示出利用根據本發明的第一實施例的基板傳送裝置的基板處理方法的順序圖。 圖12是示出在利用根據本發明的第二實施例的基板傳送裝置的基板處理方法中,在裝載基板之前帶入阻斷單元的步驟的操作狀態圖。 圖13是示出在利用根據本發明的第二實施例的基板傳送裝置的基板處理方法中,在裝載基板之前帶入阻斷單元的步驟的操作狀態圖。1 is an operational state diagram showing a step of bringing in a blocking unit before loading a substrate in a substrate processing method using a substrate transfer apparatus according to a first embodiment of the present invention. 2 is an operational state diagram showing a step of loading a substrate in the substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 3 is an operational state diagram showing a step in which a substrate is placed on a substrate support portion in the substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 4 is an operational state diagram showing steps in which the substrate is moved to a cooling position and the blocking unit is brought out in the substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 5 is an operational state diagram showing a step of performing a heating process of a substrate by moving a substrate to a heating position in the substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 6 is an operational state diagram showing a step in which a substrate is moved to a cooling position to perform a cooling process of the substrate in the substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 7 is an operational state diagram showing a step of bringing in a blocking unit before unloading the substrate in the substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 8 is an operational state diagram showing a step of separating the substrate from the cooling position in the substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 9 is an operation state diagram showing a step of unloading the substrate in the substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 10 is an operation state diagram showing a step of bringing out the blocking unit in the substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 11 is a sequence diagram illustrating a substrate processing method using the substrate transfer apparatus according to the first embodiment of the present invention. 12 is an operational state diagram showing a step of bringing in a blocking unit before loading a substrate in the substrate processing method using the substrate transfer apparatus according to the second embodiment of the present invention. 13 is an operational state diagram showing a step of bringing in a blocking unit before loading a substrate in a substrate processing method using the substrate transfer apparatus according to the second embodiment of the present invention.
100:腔室 100: Chamber
111:門 111: Door
120:加熱部 120: Heating Department
130:淋噴頭 130: shower head
140:氣體供應部 140: Gas Supply Department
150:基板支撐部 150: Substrate support part
160:冷卻部 160: Cooling Department
170:升降驅動部 170: Lifting drive part
171:升降銷 171: Lifting pin
172:升降支撐部 172: Lifting support part
200:基板傳送裝置 200: Substrate transfer device
210:機器人主體 210: Robot body
220:卸載部之卸載傳送單元機械臂 220: Unloading conveyor unit robotic arm of unloading department
221:卸載部之卸載傳送單元 221: Unloading conveying unit of unloading department
230:裝載部之裝載傳送單元機械臂 230: Loading and conveying unit robotic arm of the loading department
231:裝載部之裝載傳送單元 231: Loading and conveying unit of the loading section
250:阻斷單元機械臂 250: Blocking unit robotic arm
251:阻斷單元 251: Blocking Unit
S:熱處理空間 S: heat treatment space
Claims (18)
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KR100765901B1 (en) * | 2006-06-12 | 2007-10-10 | 세메스 주식회사 | Apparatus for treating substrate and method for loading substrate in the apparatus |
KR101680071B1 (en) * | 2015-05-18 | 2016-11-28 | (주)에스티아이 | Heating device and heating method |
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