TWI775214B - Substrate treating apparatus and substrate treating method - Google Patents

Substrate treating apparatus and substrate treating method Download PDF

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TWI775214B
TWI775214B TW109139832A TW109139832A TWI775214B TW I775214 B TWI775214 B TW I775214B TW 109139832 A TW109139832 A TW 109139832A TW 109139832 A TW109139832 A TW 109139832A TW I775214 B TWI775214 B TW I775214B
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substrate
blocking member
blocking
chamber
cooling
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TW202126162A (en
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孫侐主
朴永秀
崔宇鎮
金永鎬
吳俊昊
許東根
李民榮
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南韓商系統科技公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

本發明的目的在於提供一種可以在裝載和卸載基板時阻斷基板與腔室內部的加熱部之間而最小化基板的熱變形的基板處理裝置以及基板處理方法。為了實現其的本發明的基板處理裝置包括:腔室,在內部佈置有基板的熱處理空間;加熱部,配備在所述腔室的上部而加熱基板;基板支撐部,配備在所述腔室的內部而安置所述基板;阻斷部件,在將基板裝載到所述腔室的內部或者將所述腔室內部的基板卸載到外部的情形下,位於阻隔所述加熱部與所述基板之間而阻斷所述加熱部的熱傳遞到所述基板的阻斷位置。An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of minimizing thermal deformation of the substrate by blocking the gap between the substrate and the heating portion inside the chamber when loading and unloading the substrate. The substrate processing apparatus of the present invention to achieve this includes: a chamber in which a heat treatment space for a substrate is arranged; a heating part provided in an upper portion of the chamber to heat the substrate; and a substrate support part provided in a portion of the chamber The substrate is placed inside; a blocking member is located between the blocking member and the substrate when the substrate is loaded into the chamber or the substrate inside the chamber is unloaded to the outside And block the heat transfer of the said heating part to the blocking position of the said board|substrate.

Description

基板處理裝置以及基板處理方法Substrate processing apparatus and substrate processing method

本發明涉及基板處理裝置以及基板處理方法,更加詳細地,涉及可以在裝載或者卸載基板時阻斷基板與腔室內部的加熱部之間而最小化基板的熱變形的基板處理裝置以及基板處理方法。 The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method capable of minimizing thermal deformation of the substrate by blocking the gap between the substrate and a heating portion inside the chamber when loading or unloading the substrate .

通常,作為半導體後序工藝的回焊(reflow)工藝為將要被焊接(soldering)的焊料供應到半導體晶片或者PCB,並對該焊料加熱而電連接電子部件或者布線的工藝。為了執行回焊工藝,需要執行加熱焊料的熱處理和加熱後冷卻的熱處理,這種熱處理裝置根據製造商而被製造為多種結構。 Generally, a reflow process, which is a subsequent process of semiconductors, is a process of supplying solder to be soldered to a semiconductor wafer or PCB, and heating the solder to electrically connect electronic parts or wirings. In order to perform the reflow process, it is necessary to perform a heat treatment of heating the solder and a heat treatment of cooling after heating, and such heat treatment apparatuses are manufactured in various structures according to manufacturers.

作為與如上所述的熱處理裝置相關的現有技術,有韓國授權專利10-1680071號。 As a prior art related to the heat treatment apparatus as described above, there is Korean Granted Patent No. 10-1680071.

在所述授權專利10-1680071號公開有以如下形式構成的熱處理裝置:在基板支撐部的上側配備有對容納在腔室的基板進行加熱的加熱部,在基板支撐部的下側配備有冷卻安置在基板支撐部的基板的底表面的冷卻部,從而可以在一個腔室執行基板的加熱和冷卻處理。 The above-mentioned Patent No. 10-1680071 discloses a heat treatment apparatus configured as follows: a heating part for heating a substrate accommodated in a chamber is provided on the upper side of the substrate support part, and a cooling part is provided on the lower side of the substrate support part A cooling part is placed on the bottom surface of the substrate of the substrate support part so that heating and cooling processes of the substrate can be performed in one chamber.

然而,根據所述熱處理裝置,在執行基板的裝載和卸載過程中移送基板期間,會以沒有得到藉由冷卻部的冷卻效果的狀態暴露於從加熱部發散的熱。 However, according to the heat treatment apparatus, during the transfer of the substrate in the process of performing the loading and unloading of the substrate, it is exposed to the heat radiated from the heating portion in a state where the cooling effect by the cooling portion is not obtained.

即,在卸載完成基板處理的基板時基板遠離冷卻部而被帶出腔室外部的時期和在將新的基板裝載到腔室時基板被帶入腔室內部向靠近冷卻部的位置移動的時期,基板可能被不必要地加熱而受到熱衝擊。 That is, when unloading a substrate after substrate processing, the substrate is brought out of the chamber away from the cooling unit, and when a new substrate is loaded into the chamber, the substrate is brought into the chamber and moved to a position close to the cooling unit. , the substrate may be unnecessarily heated and subject to thermal shock.

尤其是近來,半導體工藝中異質結基板(晶片)的使用正在增加。異質結晶片在受熱時會發生因熱導致的彎曲現象等熱變形,從而存在晶片損傷的問題。 Especially recently, the use of heterojunction substrates (wafers) in semiconductor processing is increasing. When a heterogeneous crystal sheet is heated, thermal deformation such as a bending phenomenon caused by heat occurs, and there is a problem that the wafer is damaged.

本發明是為瞭解決上述諸般問題而提出的,其目的在於提供一種可以在裝載和卸載基板時阻斷基板與腔室內部的加熱部之間而最小化基板的熱變形的基板處理裝置以及基板處理方法。 The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate which can minimize thermal deformation of the substrate by blocking the gap between the substrate and a heating portion inside the chamber when loading and unloading the substrate. Approach.

為了實現上述目的的本發明的一種基板處理裝置基板處理裝置包括:腔室,在內部佈置有基板的熱處理空間;加熱部,配備在所述腔室的上部而對基板進行加熱;基板支撐部,配備在所述腔室的內部而安置所述基板;阻斷部件,在將基板裝載到所述腔室的內部或者所述腔室內部的基板卸載到外部的情形下,位於阻隔所述加熱部與所述基板之間而阻斷所述加熱部的熱傳遞到所述基板的阻斷位置。 In order to achieve the above object, a substrate processing apparatus of the present invention includes: a chamber in which a heat treatment space for a substrate is arranged; a heating part provided on the upper part of the chamber to heat the substrate; and a substrate support part, The substrate is installed inside the chamber, and a blocking member is positioned to block the heating portion when the substrate is loaded into the chamber or the substrate in the chamber is unloaded to the outside. The heat transfer of the heating portion is blocked from the substrate to the blocking position of the substrate.

在執行所述基板的熱處理的情形下,所述阻斷部件可以位於離開所述加熱部與基板之間的待機位置,其中,所述基板處理裝置還包括:阻斷部件驅動部,在所述阻斷位置與待機位置之間移動所述阻斷部件。 In the case where the heat treatment of the substrate is performed, the blocking member may be located at a stand-by position away from between the heating portion and the substrate, wherein the substrate processing apparatus further includes: a blocking member driving portion in the The blocking member is moved between the blocking position and the standby position.

所述基板處理裝置還包括:連接部件,連接所述阻斷部件與所述阻斷部件驅動部之間,其中,所述連接部件可以配備為貫通所述腔室,所述阻斷部件驅動部配備在所述腔室外部而以使所述阻斷部件能夠在所述阻斷位置與待機位置之間移動的方式移動所述連接部件。 The substrate processing apparatus further includes a connecting member connecting between the blocking member and the blocking member driving portion, wherein the connecting member may be provided so as to penetrate the chamber, and the blocking member driving portion The connecting member is provided outside the chamber to move the connecting member so that the blocking member can move between the blocking position and the standby position.

所述連接部件可以構成為連接在所述阻斷部件的一側和另一側的一對,所述阻斷部件驅動部構成為一對以移動一對所述連接部件。 The connecting members may be configured as a pair connected to one side and the other side of the blocking member, and the blocking member driving portions may be configured as a pair to move the pair of the connecting members.

所述阻斷部件構成為平板形狀並配備有多個,其中,多個所述阻斷部件按相鄰的阻斷部件的一側端部和另一側端部連接而折疊為多個層的結構連接,其中,多個所述阻斷部件可以構成為在所述阻斷位置展開而處於平板形狀,而在離開所述加熱部與基板之間的待機位置處於所述折疊為多層的狀態。 A plurality of the blocking members are provided in a flat plate shape, and the plurality of blocking members are folded into a plurality of layers by connecting one end and the other end of the adjacent blocking members. Structural connection, wherein a plurality of the blocking members may be configured to be unfolded in the blocking position to be in a flat plate shape, and to be in the state of being folded into multiple layers in a standby position separated from between the heating unit and the substrate.

所述阻斷部件可以在離開所述加熱部與基板之間的待機位置處於捲曲在滾軸的狀態,而如果拉動捲曲在所述滾軸的阻斷部件的一側端部則所述阻斷部件從所述滾軸展開而位於所述阻斷位置。 The blocking member may be in a state of being curled on a roller at a stand-by position away from the space between the heating portion and the substrate, and the blocking member may be curled on the roller when one side end of the blocking member is pulled. The component is deployed from the roller in the blocking position.

在裝載所述基板時,可以在所述基板被帶入腔室內部之前所述阻斷部件位於所述阻斷位置,而在卸載所述基板時,在所述基板被帶出所述腔室之後所述阻斷部件位於離開所述基板與加熱部之間的待機位置。 When loading the substrate, the blocking member may be in the blocking position before the substrate is brought into the interior of the chamber, and when unloading the substrate, the substrate is brought out of the chamber After that, the blocking member is located at a stand-by position separated from between the substrate and the heating unit.

在所述腔室內部配備有冷卻所述基板的冷卻部,其中,在裝載所述基板時,如果所述基板到達與所述冷卻部相鄰的冷卻位置則所述阻斷部件可以 位於所述待機位置,而在卸載所述基板時,在所述基板從所述冷卻位置分離之前所述阻斷部件可以位於所述阻斷位置。 A cooling part for cooling the substrate is provided inside the chamber, wherein, when the substrate is loaded, if the substrate reaches a cooling position adjacent to the cooling part, the blocking member may in the standby position, and when the substrate is unloaded, the blocking member may be in the blocking position before the substrate is separated from the cooling position.

所述加熱部為配備在所述腔室的上部的上部加熱器,在所述基板的至少一部分位於所述腔室內部的狀態下所述阻斷部件可以位於所述阻斷位置。 The heating unit is an upper heater provided on an upper portion of the chamber, and the blocking member may be located at the blocking position in a state where at least a part of the substrate is located inside the chamber.

所述阻斷部件可以構成為在所述阻斷部件位於所述阻斷位置的情形下,具有大於或者等於所述基板的尺寸。 The blocking member may be configured to have a size larger than or equal to the size of the substrate when the blocking member is located at the blocking position.

本發明的基板處理方法,包括如下步驟:a)阻斷部件在離開用於加熱基板的加熱部與安置基板的基板支撐部之間的待機位置待機;b)所述阻斷部件位於阻隔所述加熱部與基板支撐部之間的阻斷位置;c)將所述基板裝載到腔室內部或者將所述腔室內部的基板卸載到外部。 The substrate processing method of the present invention includes the following steps: a) the blocking member stands by at a standby position separated from the heating portion for heating the substrate and the substrate support portion for placing the substrate; b) the blocking member is located in the blocking portion A blocking position between the heating portion and the substrate support portion; c) loading the substrate into the chamber or unloading the substrate inside the chamber to the outside.

根據本發明,可以通過配備阻隔加熱部與基板之間而阻斷熱傳遞的阻斷部件來在裝載和卸載基板時通過所述阻斷部件而使基板與加熱部之間被阻斷,從而可以最小化基板的熱變形並防止基板的損傷。 According to the present invention, by providing the blocking member that blocks heat transfer between the heating portion and the substrate, the space between the substrate and the heating portion can be blocked by the blocking member when loading and unloading the substrate, so that it is possible to Thermal deformation of the substrate is minimized and damage to the substrate is prevented.

10:機械臂 10: Robotic Arm

100:基板處理裝置 100: Substrate processing device

110-1、110-2:阻斷部件 110-1, 110-2: Blocking parts

111-1、111-2:連接部件 111-1, 111-2: connecting parts

112-1、112-2:阻斷部件驅動部 112-1, 112-2: Blocking member drive part

120:加熱部 120: Heating Department

130:淋噴頭 130: shower head

140:氣體供應部 140: Gas Supply Department

150:基板支撐部 150: Substrate support part

160:冷卻部 160: Cooling Department

170:升降驅動部 170: Lifting drive part

171:升降銷 171: Lifting pin

172:升降支撐部 172: Lifting support part

180:門 180: Door

190:腔室 190: Chamber

W:基板 W: substrate

S:熱處理空間 S: heat treatment space

圖1是示出在根據本發明的第一實施例的基板處理裝置中阻斷部件位於待機位置的狀態的圖。 FIG. 1 is a diagram showing a state in which a blocking member is located at a standby position in the substrate processing apparatus according to the first embodiment of the present invention.

圖2是示出在圖1的狀態下阻斷部件移動到阻斷位置的狀態的圖。 FIG. 2 is a diagram showing a state in which the blocking member is moved to the blocking position in the state of FIG. 1 .

圖3是示出在根據本發明的第一實施例的基板處理裝置中阻斷部件位於待機位置的狀態的平面圖。 3 is a plan view showing a state in which a blocking member is located at a standby position in the substrate processing apparatus according to the first embodiment of the present invention.

圖4是示出在圖3的狀態下阻斷部件移動至阻斷位置的狀態的平面圖。 FIG. 4 is a plan view showing a state in which the blocking member is moved to the blocking position in the state of FIG. 3 .

圖5是示出基板被裝載到根據本發明的第一實施例的基板處理裝置的狀態的操作狀態圖。 5 is an operation state diagram showing a state in which a substrate is loaded into the substrate processing apparatus according to the first embodiment of the present invention.

圖6是示出在根據本發明的第一實施例的基板處理裝置中基板被安置在基板支撐部的狀態的操作狀態圖。 6 is an operational state diagram showing a state in which a substrate is set on a substrate support portion in the substrate processing apparatus according to the first embodiment of the present invention.

圖7是示出在根據本發明的第一實施例的基板處理裝置中基板移動至冷卻位置,阻斷部件移動到待機位置的狀態的操作狀態圖。 7 is an operation state diagram showing a state in which the substrate is moved to the cooling position and the blocking member is moved to the standby position in the substrate processing apparatus according to the first embodiment of the present invention.

圖8是示出在根據本發明的第一實施例的基板處理裝置中基板移動到加熱位置而執行基板的加熱處理的狀態的操作狀態圖。 8 is an operation state diagram showing a state in which the substrate is moved to the heating position and the heating process of the substrate is performed in the substrate processing apparatus according to the first embodiment of the present invention.

圖9是示出在根據本發明的第二實施例的基板處理裝置中阻斷部件位於待機位置的狀態的圖。 9 is a diagram showing a state in which the blocking member is located at the standby position in the substrate processing apparatus according to the second embodiment of the present invention.

圖10是示出在根據本發明的第二實施例的基板處理裝置中阻斷部件位於阻斷位置的狀態的圖。 10 is a diagram showing a state in which the blocking member is located at the blocking position in the substrate processing apparatus according to the second embodiment of the present invention.

以下參照附圖對本發明進行詳細說明。 The present invention will be described in detail below with reference to the accompanying drawings.

參照圖1至圖4說明根據本發明的基板處理裝置的第一實施例。 A first embodiment of the substrate processing apparatus according to the present invention will be described with reference to FIGS. 1 to 4 .

根據本發明的基板處理裝置100包括:腔室190,在內部佈置有基板W的熱處理空間S;加熱部120,配備在所述腔室190的上部而加熱基板W;基板支撐部150,配備在所述腔室190的內部而安置所述基板W;阻斷部件110-1,在將基板W裝載到所述腔室190的內部或者將所述腔室190內部的基板W卸載到外部的情形下,位於阻隔所述加熱部120與所述基板W之間而阻斷所述加熱部120的熱傳遞到所述基板W的阻斷位置。 The substrate processing apparatus 100 according to the present invention includes: a chamber 190 in which a heat treatment space S for a substrate W is arranged; a heating section 120 provided at an upper portion of the chamber 190 to heat the substrate W; and a substrate support section 150 provided in The substrate W is placed inside the chamber 190; the blocking member 110-1 is in the case of loading the substrate W into the chamber 190 or unloading the substrate W inside the chamber 190 to the outside The lower part is located at a blocking position that blocks the heating part 120 and the substrate W to block the heat transfer of the heating part 120 to the substrate W.

配備有用於控制所述基板處理裝置100的各構成的控制部。 A control unit for controlling each configuration of the substrate processing apparatus 100 is provided.

所述基板W可以是對應於半導體基板的矽晶片。然而,本發明並不限於此,所述基板W可以為用作平板顯示裝置的透明基板。所述基板W的形狀的尺寸並不限於附圖,可以具有諸如圓形以及四邊形板等多種形狀和尺寸。 The substrate W may be a silicon wafer corresponding to a semiconductor substrate. However, the present invention is not limited thereto, and the substrate W may be a transparent substrate used as a flat panel display device. The size of the shape of the substrate W is not limited to the drawings, and may have various shapes and sizes such as circular and quadrangular plates.

在所述腔室190的內部形成有熱處理所述基板W的熱處理空間S。 A heat treatment space S for heat treatment of the substrate W is formed inside the chamber 190 .

所述基板處理裝置還可以包括:門180,以使傳送機器人的機械臂10在裝載或者卸載基板W時能夠出入腔室190內部的方式開閉;冷卻部160,冷卻所述基板W;以及升降驅動部170,升降所述基板支撐部150。 The substrate processing apparatus may further include: a door 180 for opening and closing so that the robot arm 10 of the transfer robot can enter and exit the chamber 190 when loading or unloading the substrate W; a cooling unit 160 for cooling the substrate W; and a lift drive part 170 , lifts the substrate support part 150 .

所述加熱部120可以為配備在所述腔室190內部的上部的上部加熱器,並且可以構成為通過所述熱處理空間S而向所述基板W的上表面供熱。所述加熱部120可以構成為照射加熱光的燈形態或者內置有加熱器而輻射熱的板形態等。 The heating unit 120 may be an upper heater provided in an upper portion of the chamber 190 , and may be configured to supply heat to the upper surface of the substrate W through the heat treatment space S. The heating unit 120 may be configured in a lamp form that emits heating light, a plate form that incorporates a heater and radiates heat, or the like.

所述冷卻部160為為了將通過所述加熱部120而被加熱處理的基板W冷卻至可以卸載的溫度的構成,可以構成為配備在所述基板支撐部150的下側而從下面冷卻被所述基板支撐部150支撐的所述基板W。所述冷卻部160可以構成為在內部配備有諸如冷卻水流動的冷卻水路(未示出)等去熱單元的形態等。 The cooling unit 160 is configured to cool the substrate W heated by the heating unit 120 to a temperature at which it can be unloaded. The substrate W supported by the substrate supporting portion 150 is provided. The cooling unit 160 may be configured to include a heat removal unit such as a cooling water path (not shown) through which cooling water flows, or the like.

所述基板支撐部150可以構成為在其上表面安置所述基板W的形態,並且構成為通過施加到該上表面的真空而使基板W被吸附到所述基板支撐部150,從而維持所述基板W的安置狀態並且固定位置。除了前述的真空吸附方式以外,所述基板W的位置固定也可以變形實施為通過諸如靜電吸盤的靜電吸附方式等。 The substrate support portion 150 may be configured in such a manner that the substrate W is placed on the upper surface thereof, and the substrate W may be adsorbed to the substrate support portion 150 by a vacuum applied to the upper surface, thereby maintaining the substrate support portion 150. The placement state of the substrate W and the fixed position. In addition to the aforementioned vacuum suction method, the position fixation of the substrate W may also be modified and implemented by an electrostatic suction method such as an electrostatic chuck or the like.

所述升降驅動部170可以構成為包括通過馬達或者氣缸等的驅動而被獨立地升降驅動的升降銷171和升降支撐部172。 The elevating drive unit 170 may be configured to include an elevating pin 171 and an elevating support unit 172 that are independently elevated and driven by driving of a motor, an air cylinder, or the like.

所述升降銷171可以構成為從下側支撐所述基板W,並且升降驅動而從所述傳送機器人的機械臂10接收基板W而將其安置到基板支撐部150上或者從所述基板支撐部150分離基板W而傳遞給所述傳送機器人的機械臂10。 The lift pins 171 may be configured to support the substrate W from the lower side, and be driven up and down to receive the substrate W from the robot arm 10 of the transfer robot and set it on the substrate support portion 150 or from the substrate support portion. 150 separates the substrate W and transfers it to the robot arm 10 of the transfer robot.

所述升降支撐部172可以構成為從下側支撐所述基板支撐部150,並且升降驅動而使安置有所述基板W的狀態的所述基板支撐部150靠近所述加熱部120或者使其靠近或者接觸所述冷卻部160。 The lift support portion 172 may be configured to support the substrate support portion 150 from below, and to be driven up and down so that the substrate support portion 150 in a state where the substrate W is placed is brought close to the heating portion 120 or brought closer to the heating portion 120 . Or contact the cooling part 160 .

將安置有所述基板W的狀態的所述基板支撐部150靠近所述加熱部120的位置稱作所述基板W被加熱的加熱位置,將靠近或者接觸所述冷卻部160的位置稱作所述基板W被冷卻的冷卻位置。 The position of the substrate support portion 150 in the state where the substrate W is placed near the heating portion 120 is referred to as the heating position where the substrate W is heated, and the position close to or in contact with the cooling portion 160 is referred to as the position where the substrate W is heated. The cooling position where the substrate W is cooled.

所述升降銷171可以配備為上下貫通所述基板支撐部150和所述冷卻部160的形態,所述升降支撐部172可以配備為上下貫通所述冷卻部160的形態。 The lift pins 171 may be provided to vertically penetrate the substrate support portion 150 and the cooling portion 160 , and the lift support portion 172 may be provided to vertically penetrate the cooling portion 160 .

在所述基板處理裝置完成處理的基板從所述腔室190卸載,將在所述腔室190內部執行處理的預處理基板被裝載到所述腔室190內部。 The substrates processed in the substrate processing apparatus are unloaded from the chamber 190 , and the preprocessed substrates to be processed in the chamber 190 are loaded into the chamber 190 .

所述阻斷部件110-1在裝載或者卸載基板W時會位於阻斷位置,在處理基板W時會位於離開所述阻斷位置的待機位置。 The blocking member 110 - 1 is located at the blocking position when loading or unloading the substrates W, and is located at the standby position away from the blocking position when the substrates W are processed.

還可以配備有在所述阻斷位置與待機位置之間移動所述阻斷部件110-1的阻斷部件驅動部112-1和連接所述阻斷部件110-1與阻斷部件驅動部112-1之間的連接部件111-1。 A blocking member driving portion 112-1 that moves the blocking member 110-1 between the blocking position and the standby position and a blocking member driving portion 112 that connects the blocking member 110-1 and the blocking member driving portion 112 may also be provided. -1 between the connecting parts 111-1.

所述阻斷部件110-1可以構成為平板形狀而配備有多個。可以構成為所述多個阻斷部件110-1按相鄰的所述阻斷部件110-1的一側端部(圖中的上側端部)和另一側端部(圖中的下側端部)連接而折疊為多層的結構連接。 The blocking member 110-1 may be configured in a flat plate shape and provided in plural. The plurality of blocking members 110-1 may be configured such that one end (upper end in the figure) and the other end (lower in the figure) of the adjacent blocking members 110-1 end) connection and folded into a multi-layer structural connection.

圖1示出了所述阻斷部件110-1位於待機位置的狀態。在此情形下,阻斷部件110-1離開了加熱部120與基板支撐部150之間。 FIG. 1 shows a state in which the blocking member 110-1 is located at a standby position. In this case, the blocking member 110 - 1 is separated from between the heating part 120 and the substrate supporting part 150 .

圖2示出了阻斷部件110-1位於阻斷位置的狀態。如果在圖1的狀態下驅動所述阻斷部件驅動部112-1而拉動所述連接部件111-1,則所述多個阻斷部件110-1被展開,阻斷部件110-1阻隔加熱部120與基板支撐部150之間,從而通過阻斷部件110-1阻斷從加熱部120產生的熱被傳遞到安置在基板支撐部150的基板W。 FIG. 2 shows a state in which the blocking member 110-1 is located at the blocking position. When the blocking member driving part 112-1 is driven to pull the connecting member 111-1 in the state shown in FIG. 1, the plurality of blocking members 110-1 are unfolded, and the blocking member 110-1 blocks heating between the heating part 120 and the substrate supporting part 150, so that the heat generated from the heating part 120 is blocked from being transferred to the substrate W placed on the substrate supporting part 150 by the blocking member 110-1.

在圖2的狀態下,如果阻斷部件驅動部112-1被驅動而將連接部件111-1推向佈置有阻斷部件110-1的方向,則多個阻斷部件110-1將被折疊為多層而離開加熱部120與安置在基板支撐部150的基板W之間,從而位於待機位置。 In the state of FIG. 2, if the blocking member driving portion 112-1 is driven to push the connecting member 111-1 in the direction in which the blocking members 110-1 are arranged, the plurality of blocking members 110-1 will be folded It is located at the standby position by being separated from between the heating part 120 and the substrate W placed on the substrate support part 150 for the multi-layer.

所述連接部件111-1可以配備為貫通所述腔室190,所述阻斷部件驅動部112-1可以配備在所述腔室190的外部。如果所述阻斷部件驅動部112-1配備在腔室190的外部,則可以最小化在腔室190內部產生顆粒。所述連接部件111-1通過所述阻斷部件驅動部112-1的驅動,可以以位於腔室190內部的方式或者至少一部分位於腔室190外部的方式移動。 The connecting part 111 - 1 may be provided to penetrate the chamber 190 , and the blocking part driving part 112 - 1 may be provided outside the chamber 190 . If the blocking member driving part 112 - 1 is provided outside the chamber 190 , the generation of particles inside the chamber 190 can be minimized. The connecting member 111 - 1 can move so as to be located inside the chamber 190 or at least partially located outside the chamber 190 by being driven by the blocking member driving part 112 - 1 .

所述阻斷部件110-1可以利用具有高耐熱性、耐化學性和耐腐蝕性的材質構成,以承受所述腔室190內部的高溫環境以及不與供應到所述腔室190的工藝流體等反應而發生變質或者腐蝕,從而影響基板處理工藝,作為一例,可以利用矽或者不鏽鋼(SUS)。 The blocking member 110 - 1 may be constructed of a material with high heat resistance, chemical resistance and corrosion resistance to withstand the high temperature environment inside the chamber 190 and not be related to the process fluid supplied to the chamber 190 As a result of the reaction, deterioration or corrosion occurs, which affects the substrate processing process. As an example, silicon or stainless steel (SUS) can be used.

並且,所述阻斷部件110-1可以配備為具有不小於所述基板W或者與所述基板W相同的水平面積,以更加有效地阻斷所述加熱部120與所述基板之間的熱傳遞,優選地,可以配備為具有大於所述基板W的水平面積。 Also, the blocking member 110-1 may be equipped to have a horizontal area not smaller than or the same as the substrate W to more effectively block the heat between the heating portion 120 and the substrate The transfer, preferably, can be equipped with a larger horizontal area than the substrate W.

參照圖3和圖4,在平面圖觀察時,所述連接部件111-1可以由連接在所述阻斷部件110-1的一側和另一側的一對構成,所述阻斷部件驅動部112-1可以以能夠移動一對所述連接部件111-1的方式構成為一對。 3 and 4 , when viewed in plan view, the connecting member 111-1 may be composed of a pair connected to one side and the other side of the blocking member 110-1, the blocking member driving portion 112-1 may be configured as a pair so that a pair of the connecting members 111-1 can be moved.

參照圖5至圖8對根據本發明的基板處理方法進行說明。 The substrate processing method according to the present invention will be described with reference to FIGS. 5 to 8 .

如圖1所示,在基板W被帶入腔室190內部之前,阻斷部件110-1在待機位置待機。 As shown in FIG. 1 , before the substrate W is brought into the chamber 190 , the blocking member 110 - 1 waits at the standby position.

此後,如圖2所示,執行使所述阻斷部件110-1位於阻隔所述加熱部120與基板支撐部150之間的阻斷位置的步驟。 Thereafter, as shown in FIG. 2 , a step of positioning the blocking member 110 - 1 at a blocking position blocking the heating portion 120 and the substrate supporting portion 150 is performed.

對於所述阻斷部件110-1而言,隨著所述連接部件111-1通過所述阻斷部件驅動部112-1的驅動而移動,被折疊的多個阻斷部件110-1會被展開而位於阻斷位置。 For the blocking member 110-1, as the connecting member 111-1 is driven by the blocking member driving part 112-1, the folded blocking members 110-1 are moved by the blocking member 110-1. Expanded into blocking position.

所述阻斷部件110-1通過先於所述基板W而位於所述阻斷位置,因此可以在執行後述的基板處理期間有效阻斷所述基板W與所述加熱部120之間的熱傳遞。 The blocking member 110 - 1 is located at the blocking position by preceding the substrate W, and thus can effectively block the heat transfer between the substrate W and the heating portion 120 during the execution of the substrate processing described later. .

此後,如圖5所示,執行將基板W加載到腔室190內部的步驟。門180被打開,基板W通過傳送機器人的機械臂10而被帶入腔室190內部。此時,所述升降銷171以從所述基板支撐部150的上表面凸出的狀態上升驅動而支撐被傳送機器人的機械臂10支撐的所述基板W的下端,從而以使所述基板W被安置在升降銷171的上端的方式接收所述基板,此時,所述基板支撐部150可以處於通過所述 升降支撐部172的上升驅動而與所述冷卻部160向上側相隔預定距離的狀態。在接收所述基板W之後,所述傳送機器人的機械臂10可以被拉出腔室190外部,門180被關閉。 Thereafter, as shown in FIG. 5 , a step of loading the substrate W into the inside of the chamber 190 is performed. The door 180 is opened, and the substrate W is brought into the chamber 190 by the robot arm 10 of the transfer robot. At this time, the lift pins 171 are driven upward in a state of protruding from the upper surface of the substrate support portion 150 to support the lower end of the substrate W supported by the robot arm 10 of the transfer robot, so that the substrate W is The substrate is received by the upper end of the lift pin 171, and at this time, the substrate supporting part 150 may be in a position to pass the A state in which the lift support portion 172 is moved upward by a predetermined distance from the cooling portion 160 upward. After receiving the substrate W, the robotic arm 10 of the transfer robot may be pulled out of the chamber 190, and the door 180 is closed.

此後,如圖6所示,執行將基板W安置到基板支撐部150的步驟。所述升降銷171下降驅動而將所述基板W安置到所述基板支撐部150的上表面,所述基板支撐部150的上表面被施加真空而吸附所述基板W。 After that, as shown in FIG. 6 , a step of setting the substrate W to the substrate support portion 150 is performed. The lift pins 171 are driven downward to place the substrate W on the upper surface of the substrate support portion 150 , and a vacuum is applied to the upper surface of the substrate support portion 150 to attract the substrate W.

此後,如圖7所示,所述升降銷171可以在所述基板W被安置到所述基板支撐部150之後進一步下降而使其上端位於所述冷卻部160的內側。所述升降支撐部172下降驅動而下降所述基板支撐部150,使其位於所述冷卻位置,從而將通過所述冷卻部160的冷卻效果應用到所述基板W。 Thereafter, as shown in FIG. 7 , the lift pins 171 may further descend after the substrate W is placed on the substrate support portion 150 so that the upper ends thereof are located inside the cooling portion 160 . The elevating support portion 172 is driven downward to lower the substrate support portion 150 to be positioned at the cooling position, so that the cooling effect of the cooling portion 160 is applied to the substrate W. As shown in FIG.

如果所述基板W和所述基板支撐部150位於所述冷卻位置,則所述阻斷部件驅動部112-1進行驅動而使阻斷部件110-1移動到待機位置。 When the substrate W and the substrate support portion 150 are located at the cooling position, the blocking member driving portion 112-1 is driven to move the blocking member 110-1 to the standby position.

如此,使所述阻斷部件110-1構成為在所述基板W被帶入所述腔室190而到達所述冷卻位置的期間阻隔所述基板W的垂直方向上側,從而可以在所述基板W未被應用通過所述冷卻部160的冷卻效果的狀態下阻斷通過所述加熱部120而被加熱的情形,並且可以防止在所述基板W發生熱變形等損傷的情形。 In this way, the blocking member 110 - 1 is configured to block the upper side in the vertical direction of the substrate W while the substrate W is brought into the chamber 190 and reaches the cooling position, so that the substrate W can be blocked in the vertical direction. W is blocked from being heated by the heating unit 120 in a state where the cooling effect by the cooling unit 160 is not applied, and the substrate W can be prevented from being damaged such as thermal deformation.

此後,如圖8所示,執行加熱處理基板W的步驟。 Thereafter, as shown in FIG. 8 , a step of heat-treating the substrate W is performed.

所述升降支撐部172通過上升驅動而使所述基板支撐部150上升,使其位於所述加熱位置,從而將通過所述加熱部120的加熱效果應用到所述基板W。 The elevating support portion 172 is driven to raise the substrate support portion 150 to be positioned at the heating position, thereby applying the heating effect of the heating portion 120 to the substrate W. As shown in FIG.

此時,通過所述腔室190上端的氣體供應部140使工藝氣體流入而被所述加熱部120加熱,並通過淋噴頭130而被噴射到熱處理空間S,從而執行針對所述基板W的加熱處理工藝,例如,回焊工藝。 At this time, the process gas flows in through the gas supply part 140 at the upper end of the chamber 190 to be heated by the heating part 120 , and is sprayed into the heat treatment space S through the shower head 130 , so that the heating of the substrate W is performed. Processing process, for example, reflow process.

然後可以執行冷卻處理基板W的步驟。為了冷卻處理所述基板W,所述升降支撐部172下降驅動而使所述基板支撐部150下降並位於所述冷卻位置,從而將通過所述冷卻部160的冷卻效果應用到所述基板W,據此冷卻通過所述熱處理工藝加熱的所述基板W。 The step of cooling the processed substrate W may then be performed. In order to cool the substrate W, the elevating support portion 172 is driven downward to move the substrate support portion 150 down to the cooling position, so that the cooling effect of the cooling portion 160 is applied to the substrate W, The substrate W heated by the heat treatment process is cooled accordingly.

此後,執行阻斷部件110-1移動到阻斷位置的步驟。 After that, the step of moving the blocking member 110-1 to the blocking position is performed.

如果所述阻斷部件驅動部112-1驅動,則所述阻斷部件110-1將移動到阻斷位置而阻隔基板W與加熱部120之間。 If the blocking member driving part 112 - 1 is driven, the blocking member 110 - 1 will move to the blocking position to block the space between the substrate W and the heating part 120 .

在所述基板W位於所述冷卻位置的狀態下,阻斷部件110-1位於阻斷位置,因此直到基板W被卸載為止,可以更加有效地阻斷基板W與所述加熱部120之間的熱傳遞。 When the substrate W is located at the cooling position, the blocking member 110 - 1 is located at the blocking position. Therefore, until the substrate W is unloaded, it is possible to more effectively block the connection between the substrate W and the heating unit 120 . heat transfer.

然後,執行從所述冷卻位置分離基板支撐部150的步驟。所述升降支撐部172上升驅動而使所述基板支撐部150上升,從而使其從所述冷卻位置分離,據此,在本步驟之後,通過所述冷卻部160的冷卻效果將不被應用到所述基板W。 Then, a step of separating the substrate support 150 from the cooling position is performed. The elevating support portion 172 is driven upward to lift the substrate support portion 150 to separate it from the cooling position. Accordingly, after this step, the cooling effect by the cooling portion 160 will not be applied to the substrate W.

然後,執行卸載基板W的步驟。傳送機器人的機械臂10被帶入腔室190內部,從所述升降銷171接收所述基板W並支撐。此時,施加到所述基板支撐部150的上表面的真空被解除,所述升降銷171以從所述基板支撐部150的上表面凸出的方式上升驅動而將所述基板支撐部150和所述基板W上下隔開,所述傳送機器人的機械臂10向所述基板W與所述基板支撐部150之間移動而支撐所述基板W的下端,從而接收所述基板W。 Then, the step of unloading the substrate W is performed. The robot arm 10 of the transfer robot is brought into the chamber 190 to receive and support the substrate W from the lift pins 171 . At this time, the vacuum applied to the upper surface of the substrate support portion 150 is released, and the lift pins 171 are driven upward so as to protrude from the upper surface of the substrate support portion 150 to move the substrate support portion 150 and the substrate support portion 150 upward. The substrate W is spaced up and down, and the robot arm 10 of the transfer robot moves between the substrate W and the substrate support portion 150 to support the lower end of the substrate W, thereby receiving the substrate W.

在所述傳送機器人的機械臂10接收基板W之後傳送所述基板W而帶出腔室190。 After the robot arm 10 of the transfer robot receives the substrate W, the substrate W is transferred to be taken out of the chamber 190 .

如此,所述阻斷部件110-1構成為在所述基板W從冷卻位置分離而完全帶出所述腔室190的期間阻隔所述基板W的垂直方向上側,從而可以阻斷通過加熱部120而被加熱的情形,並且可以防止所述基板W發生熱變形等損傷。 In this way, the blocking member 110 - 1 is configured to block the vertical upper side of the substrate W while the substrate W is separated from the cooling position and completely taken out of the chamber 190 , thereby blocking the passage of the substrate W through the heating portion 120 . When heated, the substrate W can be prevented from being damaged by thermal deformation or the like.

然後,阻斷部件驅動部112-1進行驅動而將阻斷部件110-1移動到待機位置。 Then, the blocking member driving unit 112-1 drives and moves the blocking member 110-1 to the standby position.

參照圖9和圖10對根據本發明的第二實施例的阻斷部件進行說明。 A blocking member according to a second embodiment of the present invention will be described with reference to FIGS. 9 and 10 .

根據第二實施例的阻斷部件110-2構成為在待機位置處於捲曲在滾軸的狀態,如果拉動捲曲在所述滾軸的阻斷部件110-2的一側端部則其會從滾軸展開而位於阻斷位置。 The blocking member 110 - 2 according to the second embodiment is configured to be in a state of being curled on the roller at the standby position, and if one side end of the blocking member 110 - 2 curled on the roller is pulled, it will be removed from the roller. The shaft is unfolded into the blocking position.

在所述阻斷部件110-2的一側端部連接有連接部件111-2,在所述連接部件111-2的另一側配備有阻斷部件驅動部112-2。 A connecting member 111-2 is connected to one end of the blocking member 110-2, and a blocking member driving portion 112-2 is provided on the other side of the connecting member 111-2.

如果驅動所述阻斷部件驅動部112-2,則所述連接部件111-2向阻斷部件驅動部112-2側移動或者向捲曲有所述阻斷部件110-2的滾軸側移動。 When the blocking member driving part 112-2 is driven, the connecting member 111-2 moves to the blocking member driving part 112-2 side or to the roller side where the blocking member 110-2 is curled.

參照圖9,阻斷部件110-2在待機位置處於捲曲在滾軸的外周面的狀態。在此狀態下,阻斷部件110-2不會阻斷加熱部120與基板W或者基板支撐部150之間。 Referring to Fig. 9 , the blocking member 110-2 is in a state of being curled on the outer peripheral surface of the roller at the standby position. In this state, the blocking member 110 - 2 does not block the space between the heating portion 120 and the substrate W or the substrate supporting portion 150 .

參照圖10,在圖9的狀態下驅動阻斷部件驅動部112-2而使阻斷部件110-2位於阻斷位置。驅動阻斷部件驅動部112-2則會拉動連接部件111-2,連接在所述連接部件111-2的阻斷部件110-2從滾軸展開而移動至阻斷位置。在此狀態 下,阻斷部件110-2阻斷加熱部120與基板W或者基板支撐部150之間,從而以使加熱部120的熱無法傳遞到基板W的方式執行阻斷。 Referring to FIG. 10 , in the state of FIG. 9 , the blocking member driving unit 112 - 2 is driven so that the blocking member 110 - 2 is located at the blocking position. When the blocking member driving part 112-2 is driven, the connecting member 111-2 is pulled, and the blocking member 110-2 connected to the connecting member 111-2 is unfolded from the roller and moved to the blocking position. in this state Next, the blocking member 110 - 2 blocks the space between the heating portion 120 and the substrate W or the substrate supporting portion 150 , thereby performing blocking such that the heat of the heating portion 120 cannot be transferred to the substrate W.

在第二實施例的情形下,如圖3和圖4所示,連接部件111-1可以配備為一對,阻斷部件驅動部112-2可以配備為一對。 In the case of the second embodiment, as shown in FIGS. 3 and 4 , the connecting members 111-1 may be provided as a pair, and the blocking member driving portions 112-2 may be provided as a pair.

並且,所述連接部件111-2可以配備為貫通所述腔室190,所述阻斷部件110-2到達阻斷位置則可以成為平板形狀。 In addition, the connecting member 111-2 may be provided to penetrate through the chamber 190, and the blocking member 110-2 may have a flat plate shape when it reaches the blocking position.

並且,在所述阻斷部件110-2位於所述阻斷位置的情形下,所述阻斷部件110-2可以構成為大於或者等於所述基板的尺寸。 In addition, when the blocking member 110-2 is located at the blocking position, the blocking member 110-2 may be configured to be larger than or equal to the size of the substrate.

並且,在加載所述基板W時,在所述基板W被帶入所述腔室190內部之前所述阻斷部件110-2可以位於所述阻斷位置,而在卸載所述基板W時,在所述基板W被帶出所述腔室190之後所述阻斷部件110-2可以位於離開所述基板W與加熱部120之間的待機位置。 Also, when the substrate W is loaded, the blocking member 110 - 2 may be located at the blocking position before the substrate W is brought into the chamber 190 , and when the substrate W is unloaded, The blocking member 110 - 2 may be located at a standby position between the substrate W and the heating part 120 after the substrate W is taken out of the chamber 190 .

並且,所述阻斷部件110-2可以構成為,如果在所述基板W的裝載時所述基板W到達與冷卻部160相鄰的冷卻位置,則位於所述待機位置,而在所述基板W的卸載時,在所述基板W從所述冷卻位置分離之前位於所述阻斷位置。 In addition, the blocking member 110-2 may be configured to be located at the standby position when the substrate W reaches a cooling position adjacent to the cooling unit 160 when the substrate W is loaded When the W is unloaded, the blocking position is located before the substrate W is separated from the cooling position.

根據如上所述的構成,可以通過配備阻隔加熱部120與基板W之間而阻斷熱傳遞的阻斷部件110-1、110-2,來在裝載或者卸載基板W時通過所述阻斷部件110-1、110-2使基板W與加熱部120之間被阻斷,從而最小化基板W的熱變形並防止基板的損傷。 According to the above-described configuration, by providing the blocking members 110-1 and 110-2 for blocking the heat transfer between the heating portion 120 and the substrate W, the blocking members can pass when the substrate W is loaded or unloaded. 110-1 and 110-2 block the space between the substrate W and the heating part 120, thereby minimizing thermal deformation of the substrate W and preventing damage to the substrate.

雖然如前所示地以優選實施例為例對本發明進行了詳細說明,但本發明並不限於前述的實施例,可以在權利要求書的範圍和發明的詳細說明以及附圖的範圍內進行多種變形而實施,並且這些變形也屬於本發明。 Although the present invention has been described in detail by taking the preferred embodiment as an example as shown above, the present invention is not limited to the foregoing embodiment, and various modifications are possible within the scope of the claims and the scope of the detailed description of the invention and the accompanying drawings. Modifications are implemented, and these modifications also belong to the present invention.

10:機械臂10: Robotic Arm

100:基板處理裝置100: Substrate processing device

110-1:阻斷部件110-1: Blocking parts

111-1:連接部件111-1: Connecting parts

112-1:阻斷部件驅動部112-1: Blocking part drive

120:加熱部120: Heating Department

130:淋噴頭130: shower head

140:氣體供應部140: Gas Supply Department

150:基板支撐部150: Substrate support part

160:冷卻部160: Cooling Department

170:升降驅動部170: Lifting drive part

171:升降銷171: Lifting pin

172:升降支撐部172: Lifting support part

180:門180: Door

190:腔室190: Chamber

S:熱處理空間S: heat treatment space

Claims (11)

一種基板處理裝置,包括:腔室,在內部佈置有基板的熱處理空間;加熱部,配備在該腔室的上部而加熱基板;基板支撐部,配備在該腔室的內部而安置該基板;以及多個阻斷部件,在將基板裝載到該腔室的內部或者將該腔室內部的該基板卸載到外部的情形下,位於阻隔該加熱部與該基板之間而阻斷該加熱部的熱傳遞到該基板的阻斷位置,在執行該基板的熱處理的情形下,位於離開該加熱部與基板之間的待機位置;阻斷部件驅動部,在該阻斷位置與該待機位置之間移動該阻斷部件;連接部件,在與該阻斷部件的垂直方向上側端部相同的水平面上連接該阻斷部件與該阻斷部件驅動部之間;該多個阻斷部件彼此連接並在水平方向上能夠折疊為多個層,在折疊為多個層的情況下,相鄰的阻斷部件之間的連接部反覆地位於該阻斷部件的垂直方向上的上側端部和下側端部;該阻斷部件構成為在與該上側端部相同的水平面上展開而處於平板形狀,在離開該加熱部與該基板之間的該待機位置處於該折疊為多層的狀態。 A substrate processing apparatus comprising: a chamber in which a heat treatment space for a substrate is arranged; a heating portion provided in an upper portion of the chamber to heat a substrate; a substrate support portion provided in the interior of the chamber to accommodate the substrate; and A plurality of blocking members are located between the heating portion and the substrate to block heat of the heating portion when the substrate is loaded into the chamber or the substrate inside the chamber is unloaded to the outside The blocking position transmitted to the substrate is located at a standby position separated from between the heating unit and the substrate when heat treatment of the substrate is performed; the blocking member driving unit is moved between the blocking position and the standby position the blocking member; a connecting member that connects between the blocking member and the blocking member driving portion on the same horizontal plane as the vertical upper end portion of the blocking member; the plurality of blocking members are connected to each other and are horizontal It can be folded into a plurality of layers in the direction, and when it is folded into a plurality of layers, the connection parts between the adjacent blocking members are repeatedly located at the upper end portion and the lower side end portion in the vertical direction of the blocking member ; The blocking member is configured to be unfolded on the same horizontal plane as the upper end portion to be in a flat plate shape, and to be in a state of being folded into multiple layers at the standby position away from the heating portion and the substrate. 如請求項1所述的基板處理裝置,其中,該連接部件配備為貫通該腔室,該阻斷部件驅動部配備在該腔室外部而以使該阻斷部件能夠在該阻斷位置與該待機位置之間移動的方式移動該連接部件。 The substrate processing apparatus of claim 1, wherein the connecting member is provided to penetrate the chamber, and the blocking member driving portion is provided outside the chamber so that the blocking member can communicate with the blocking member at the blocking position. Move the connecting member in a manner that moves between standby positions. 如請求項2所述的基板處理裝置,其中該連接部件構成為連接在該阻斷部件的一側和另一側的一對,該阻斷部件驅動部構成為一對以移動一對該連接部件。 The substrate processing apparatus according to claim 2, wherein the connecting member is configured as a pair connected to one side and the other side of the blocking member, and the blocking member driving portion is configured as a pair to move a pair of the connections part. 如請求項1所述的基板處理裝置,其中在裝載該基板時,在該基板被帶入腔室內部之前該阻斷部件位於該阻斷位置,而在卸載該基板時,在該基板被帶出該腔室之後該阻斷部件位於離開該基板與該加熱部之間的該待機位置。 The substrate processing apparatus of claim 1, wherein when the substrate is loaded, the blocking member is located at the blocking position before the substrate is brought into the chamber, and when the substrate is unloaded, the substrate is brought After exiting the chamber, the blocking member is located at the standby position between the substrate and the heating portion. 如請求項1所述的基板處理裝置,其中在該腔室內部配備有冷卻該基板的冷卻部,在裝載該基板時,如果該基板到達與該冷卻部相鄰的冷卻位置則該阻斷部件位於該待機位置,而在卸載該基板時,在該基板與該冷卻位置分離之前該阻斷部件位於該阻斷位置。 The substrate processing apparatus according to claim 1, wherein a cooling portion for cooling the substrate is provided inside the chamber, and when the substrate is loaded, if the substrate reaches a cooling position adjacent to the cooling portion, the blocking member is in the standby position, and when the substrate is unloaded, the blocking member is in the blocking position before the substrate is separated from the cooling position. 如請求項1所述的基板處理裝置,其中該加熱部為配備在該腔室的上部的上部加熱器,在該基板的至少一部分位於該腔室內部的狀態下,該阻斷部件位於該阻斷位置。 The substrate processing apparatus according to claim 1, wherein the heating unit is an upper heater provided on an upper portion of the chamber, and the blocking member is located in the blocking member in a state where at least a part of the substrate is located inside the chamber. break position. 如請求項1所述的基板處理裝置,其中該阻斷部件構成為在該阻斷部件位於該阻斷位置的情形下,具有大於或者等於該基板的尺寸。 The substrate processing apparatus according to claim 1, wherein the blocking member is configured to have a size greater than or equal to the substrate when the blocking member is located at the blocking position. 一種基板處理方法,包括步驟:A)多個阻斷部件在離開用於加熱基板的加熱部與安置該基板的基板支撐部之間的待機位置而待機;B)該阻斷部件位於阻隔該加熱部與該基板支撐部之間的阻斷位置;以及C)將該基板裝載到腔室內部或者將該腔室內部的該基板卸載到外部; 在該A)步驟中,該多個阻斷部件彼此連接並在水平方向上能夠折疊為多個層,在折疊為多個層的情況下,相鄰的阻斷部件之間的連接部反覆地位於該阻斷部件的垂直方向上的上側端部和下側端部;在該B)步驟中,該阻斷部件構成為在該阻斷位置中與該上側端部相同的水平面上展開而處於平板形狀;在該阻斷位置與該待機位置之間移動該阻斷部件的阻斷部件驅動部在與該上側端部相同的水平面上通過連接部件連接於該阻斷部件。 A substrate processing method, comprising the steps of: A) a plurality of blocking members stand by from a stand-by position between a heating portion for heating a substrate and a substrate support portion on which the substrate is placed; B) the blocking members are positioned to block the heating and C) loading the substrate inside the chamber or unloading the substrate inside the chamber to the outside; In the step A), the plurality of blocking members are connected to each other and can be folded into a plurality of layers in the horizontal direction, and in the case of folding into a plurality of layers, the connecting portions between the adjacent blocking members are repeatedly The upper end portion and the lower end portion in the vertical direction of the blocking member; in the B) step, the blocking member is configured to be deployed on the same horizontal plane as the upper end portion in the blocking position A flat plate shape; a blocking member driving portion that moves the blocking member between the blocking position and the standby position is connected to the blocking member through a connecting member on the same horizontal plane as the upper end portion. 如請求項8所述的基板處理方法,其中該阻斷部件待機的該待機位置為該腔室的內部。 The substrate processing method according to claim 8, wherein the standby position where the blocking member stands by is inside the chamber. 如請求項8所述的基板處理方法,其中在加載該基板時,在該基板被帶入該腔室內部之前該阻斷部件位於該阻斷位置,而在卸載該基板時,在該基板從該腔室內被帶出之後該阻斷部件位於該待機位置。 The substrate processing method of claim 8, wherein when the substrate is loaded, the blocking member is located at the blocking position before the substrate is brought into the chamber, and when the substrate is unloaded, the substrate is removed from the chamber. The blocking member is in the standby position after being brought out of the chamber. 如請求項10所述的基板處理方法,其中在該腔室內部配備有冷卻該基板的冷卻部,在加載該基板時,如果該基板到達與冷卻該基板的該冷卻部相鄰的冷卻位置,則該阻斷部件位於該待機位置,而在卸載該基板時,在該基板從該冷卻位置分離之前該阻斷部件位於該阻斷位置。The substrate processing method according to claim 10, wherein a cooling portion for cooling the substrate is provided inside the chamber, and when the substrate is loaded, if the substrate reaches a cooling position adjacent to the cooling portion for cooling the substrate, Then the blocking member is located in the standby position, and when the substrate is unloaded, the blocking member is located in the blocking position before the substrate is separated from the cooling position.
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JPH05251333A (en) * 1992-03-06 1993-09-28 Fujitsu Ltd Semiconductor manufacturing apparatus and treatment method
JP2003282469A (en) * 2002-03-26 2003-10-03 Dainippon Screen Mfg Co Ltd Heat-treatment apparatus for substrate
JP2006134942A (en) * 2004-11-02 2006-05-25 Sharp Corp Device and method for heat treatment
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