TWI801934B - Heat treatment apparatus - Google Patents
Heat treatment apparatus Download PDFInfo
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- TWI801934B TWI801934B TW110126180A TW110126180A TWI801934B TW I801934 B TWI801934 B TW I801934B TW 110126180 A TW110126180 A TW 110126180A TW 110126180 A TW110126180 A TW 110126180A TW I801934 B TWI801934 B TW I801934B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0033—Chamber type furnaces the floor of the furnaces consisting of the support carrying the charge, e.g. car type furnaces
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
- F27D21/0014—Devices for monitoring temperature
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D3/04—Ram or pusher apparatus
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
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- Heat Treatments In General, Especially Conveying And Cooling (AREA)
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Abstract
本發明之課題在於提供一種熱處理裝置,其搬送被處理物至熱處理爐內且被支撐在支撐材時,不會對被處理構件產生熱衝擊。 本發明之解決手段為一種熱處理裝置,其具備有:熱處理爐,其形成熱處理空間;支撐材,其被設置在上述熱處理空間內;搬送裝置,其在將被處理物自上述熱處理空間外搬送至上述熱處理空間內之後,使上述支撐材支撐上述被處理物;及溫度檢測裝置,其檢測藉由上述搬送裝置被搬送至上述熱處理裝置內的上述被處理物之溫度。上述搬送裝置係根據藉由上述溫度檢測裝置被檢測的溫度,決定使上述支撐材支撐藉由上述搬送裝置被搬送至上述熱處理裝置內的上述被處理物的時機。 An object of the present invention is to provide a heat treatment device that does not cause thermal shock to a member to be processed when the object to be processed is transported into a heat treatment furnace and supported by a support member. The solution of the present invention is a heat treatment device, which is equipped with: a heat treatment furnace, which forms a heat treatment space; a support material, which is arranged in the heat treatment space; and a conveying device, which transports the object to be processed from outside the heat treatment space to After entering the heat treatment space, the supporting material supports the object to be processed; and a temperature detection device that detects the temperature of the object to be processed that is conveyed into the heat treatment device by the conveying device. The conveying device determines a timing at which the supporting member supports the object to be processed conveyed into the heat treatment device by the conveying device based on the temperature detected by the temperature detecting device.
Description
本發明係關於一種熱處理裝置,該熱處理裝置具有藉由搬送用桿將被處理物搬入及搬出熱處理爐的機構。The present invention relates to a heat treatment device having a mechanism for carrying in and out a to-be-processed object into and out of a heat treatment furnace by means of a transport rod.
在將被處理物搬入至熱處理爐內進行熱處理之熱處理裝置中,自熱處理爐外搬送被處理物,且利用熱處理爐內之支撐構件支撐被處理物之後進行熱處理。In the heat treatment apparatus for carrying the object into the heat treatment furnace for heat treatment, the object to be processed is transported from outside the heat treatment furnace, and the object to be processed is supported by a support member in the heat treatment furnace before heat treatment is performed.
例如,在專利文獻1中,在爐體之搬入被處理物的搬入搬出口(開口部)隔著閘門設置準備室40。被處理物係利用準備室40內之支撐機構所支撐,然後藉由臂被搬送至爐體內。並且,在爐體內將被處理物移交至支撐材。若設置此種之準備室,則具有可簡化熱處理裝置之構造,且可小型化的優點。For example, in Patent Document 1, a preparation chamber 40 is provided through a shutter at the loading/unloading port (opening portion) of the furnace body for loading the processed object. The object to be processed is supported by the supporting mechanism in the preparation chamber 40, and then transported into the furnace body by the arm. And, the object to be processed is handed over to the supporting material in the furnace body. If such a preparatory chamber is provided, there is an advantage that the structure of the heat treatment apparatus can be simplified and miniaturized.
此外,於專利文獻2所示之構造,係自熱處理爐外搬送被處理物,且在熱處理容器內使被處理基板下降並搭載在處理台。此時,由於被處理物為低溫,因此以處理台與基板之溫度差變小之方式確保充足之下降時間。如此,將處理台與基板之溫度差消除,可減少堆積在處理台上的膜之剝離。 [先前技術文獻] [專利文獻] In addition, in the structure shown in Patent Document 2, the object to be processed is conveyed from outside the heat treatment furnace, and the substrate to be processed is lowered in the heat treatment container and placed on the processing table. At this time, since the object to be processed is low temperature, sufficient fall time is ensured so that the temperature difference between the processing stage and the substrate becomes small. In this way, the temperature difference between the processing table and the substrate is eliminated, and the peeling of the film deposited on the processing table can be reduced. [Prior Art Literature] [Patent Document]
專利文獻1:日本專利特開2017-117850號公報 專利文獻2:日本專利特開2001-250782號公報 Patent Document 1: Japanese Patent Laid-Open No. 2017-117850 Patent Document 2: Japanese Patent Laid-Open No. 2001-250782
(發明所欲解決之問題)(Problem to be solved by the invention)
然而,在上述任一之熱處理裝置中,亦具有在利用爐內之支撐材支撐被搬送至熱處理爐內的被處理物時,產生熱衝擊的可能性。However, in any of the heat treatment apparatuses described above, when the object to be processed transported into the heat treatment furnace is supported by the supporting material in the furnace, thermal shock may occur.
例如,在專利文獻1記載之熱處理裝置中,在爐內支撐被處理物時,並未考慮支撐材與被處理物之溫度差。因此,若兩者之溫度差較大,則具有在支撐構件與被處理物接觸時產生熱衝擊的可能性。For example, in the heat treatment apparatus described in Patent Document 1, when the object to be processed is supported in the furnace, the temperature difference between the support material and the object to be processed is not considered. Therefore, if the temperature difference between the two is large, there is a possibility that a thermal shock will be generated when the support member contacts the object to be processed.
此外,在專利文獻2記載之熱處理裝置中,在熱處理容器內使被處理基板下降並搭載在處理台時,雖然以處理台與基板之溫度差變小之方式確保充足之下降時間,但是可以認為在熱處理容器內支撐被處理基板的升降銷14已被加熱。因此,利用升降銷14搭載被處理物時之升降銷14之前端部與被處理物之間的溫度差增大,從而在該部分產生熱衝擊。In addition, in the heat treatment apparatus described in Patent Document 2, when the substrate to be processed is lowered in the heat treatment container and placed on the processing table, a sufficient time for falling is ensured so that the temperature difference between the processing table and the substrate is reduced, but it is considered that The lift pins 14 supporting the substrate to be processed within the heat treatment vessel have been heated. Therefore, when the object to be processed is mounted on the lift pin 14, the temperature difference between the front end portion of the lift pin 14 and the object to be processed increases, and thermal shock occurs in this portion.
如此,在習知之熱處理裝置中,若自外部搬送被處理物且利用熱處理爐內之支撐材進行支撐,則成為利用高溫之支撐材支撐未成為爐內之高溫狀態的被處理物,從而對被處理物產生熱損傷。其結果,在被處理物會產生裂痕或破損(碎裂)。Thus, in the known heat treatment apparatus, if the object to be processed is conveyed from the outside and supported by the support material in the heat treatment furnace, the object to be processed that has not become a high-temperature state in the furnace is supported by a high-temperature support material. The treated object produces heat damage. As a result, cracks or breakage (fragmentation) occur in the object to be processed.
本發明之目的在於提供一種熱處理裝置,其在將被處理物搬送至熱處理爐內且被支撐在支撐材時,不會對被處理物產生熱衝擊。 (解決問題之技術手段) An object of the present invention is to provide a heat treatment device that does not cause a thermal shock to the object when the object is transported into the heat treatment furnace and supported by a supporting material. (technical means to solve the problem)
本發明之熱處理裝置,其具備有: 熱處理爐,其形成熱處理空間,且對上述熱處理空間內之被處理物實施加熱處理; 支撐材,其被設置在上述熱處理空間內;及 搬送裝置,其在將上述被處理物自上述熱處理空間外搬送至上述熱處理空間內之後,使上述支撐材支撐上述被處理物。 The heat treatment device of the present invention has: A heat treatment furnace, which forms a heat treatment space, and performs heat treatment on the object to be treated in the heat treatment space; a support material, which is arranged in the above-mentioned heat treatment space; and A transport device that supports the object on the support member after transporting the object to be processed from outside the heat treatment space into the heat treatment space.
此外,其具備有溫度檢測裝置,檢測藉由上述搬送裝置被搬送至上述熱處理裝置內的上述被處理物之溫度, 上述搬送裝置係根據藉由上述溫度檢測裝置被檢測的溫度,決定使上述支撐材支撐藉由上述搬送裝置被搬送至上述熱處理裝置內的上述被處理物之時機。 In addition, it is provided with a temperature detection device for detecting the temperature of the object to be processed transported into the heat treatment device by the transport device, The conveying device determines a timing at which the supporting member supports the object to be processed conveyed into the heat treatment device by the conveying device based on the temperature detected by the temperature detecting device.
再者,在本發明中,所謂被處理物係指雖然意味著進行熱處理的對象物之工件,但是亦包含支撐工件的托盤的概念(以下,相同)。In addition, in the present invention, the term "to-be-processed object" refers to a work to be heat-treated, but also includes a concept of a pallet supporting the work (hereinafter, the same).
被處理物係在自熱處理空間外被搬送至熱處理空間內之後,被支撐在被設置在熱處理空間內的支撐材。並且,可調整該所被支撐的時機。亦即,藉由溫度檢測裝置,根據被搬送至熱處理裝置內的被處理物之溫度,調整上述時機。After the object to be processed is transported into the heat treatment space from outside the heat treatment space, it is supported by a support member installed in the heat treatment space. Also, the timing of the support can be adjusted. That is, the above-mentioned timing is adjusted by the temperature detection device according to the temperature of the object to be processed transported into the heat treatment device.
藉由如此控制,可在熱處理空間內將被搬送至熱處理裝置內的被處理物之溫度加熱之後,利用支撐材進行支撐。於是,利用支撐材支撐被處理物時之兩者之溫度差不會變高,從而不會對被處理物產生熱衝擊。By controlling in this way, the object to be processed that is conveyed into the heat treatment apparatus can be heated in the heat treatment space and then supported by the support material. Therefore, when the object to be processed is supported by the support material, the temperature difference between the two does not increase, and thermal shock does not occur to the object to be processed.
在藉由溫度檢測裝置所被檢測的溫度成為高於損傷溫度的情形時,搬送裝置使支撐材支撐藉由搬送裝置被搬送至熱處理裝置內的被處理物。所謂損傷溫度係指被處理物藉由熱衝擊而產生裂痕或碎裂的溫度,即在支撐材支撐被處理物時,藉由起因於被處理物之溫度與支撐材之溫度差的熱衝擊而上述被處理物損傷的溫度。When the temperature detected by the temperature detecting device is higher than the damage temperature, the conveying device supports the support member to support the object to be processed conveyed into the heat treatment device by the conveying device. The so-called damage temperature refers to the temperature at which the treated object is cracked or broken by thermal shock. The temperature at which the above-mentioned treated object is damaged.
此外,溫度檢測裝置係不接觸至被處理物而檢測被處理物之溫度。作為此種之溫度檢測裝置,通常為放射溫度計。 (對照先前技術之功效) In addition, the temperature detection device detects the temperature of the processed object without contacting the processed object. Such a temperature detection device is usually a radiation thermometer. (compared to the effect of previous technology)
根據本發明,由於在被處理物被搬送至熱處理爐內且被支撐材所支撐之時,以被處理物成為一定之高溫之後才被支撐之方式進行設定,因此可防止被處理物因熱衝擊而損傷的情形。According to the present invention, when the object to be processed is transported into the heat treatment furnace and supported by the supporting material, the object to be processed is set to be supported after it reaches a certain high temperature, so that the object to be processed can be prevented from being subjected to thermal shock. And the damage situation.
以下,參照圖式,對本發明之實施形態之熱處理裝置進行說明。圖1(A)、圖1(B)為顯示本發明之實施形態之熱處理裝置之概略構成的側視圖。圖1(A)、圖1(B)中,以剖視圖顯示搬送室及熱處理爐。此外,圖1(A)顯示被處理物位在搬送室內的情形,圖1(B)顯示被處理物在熱處理爐內的情形。圖2為搬送用桿之前端部(第一端部)的俯視圖。圖3(A)為側視圖,圖3(B)為搬送用桿之前端部(第一端部)的俯視圖,圖3(C)為端面圖,圖3(D)為外觀立體圖。圖4為顯示在熱處理空間之z方向上被處理物、支撐材之位置關係的圖。Hereinafter, a heat treatment apparatus according to an embodiment of the present invention will be described with reference to the drawings. 1(A) and 1(B) are side views showing a schematic configuration of a heat treatment apparatus according to an embodiment of the present invention. In FIG. 1(A) and FIG. 1(B), the transfer chamber and the heat treatment furnace are shown in cross-sectional views. In addition, FIG. 1(A) shows the situation where the object to be processed is in the transfer chamber, and FIG. 1(B) shows the situation where the object to be processed is in the heat treatment furnace. Fig. 2 is a plan view of the front end (first end) of the transport rod. 3(A) is a side view, FIG. 3(B) is a top view of the front end (first end) of the transport rod, FIG. 3(C) is an end view, and FIG. 3(D) is an external perspective view. Fig. 4 is a diagram showing the positional relationship between the object to be processed and the support in the z direction of the heat treatment space.
以下,將高度方向作為z方向,將搬送用桿之移動方向作為x方向,且將與x方向正交之方向作為Y方向進行說明。Hereinafter, the height direction is referred to as the z direction, the moving direction of the transport rod is referred to as the x direction, and the direction perpendicular to the x direction is referred to as the Y direction.
(熱處理裝置10之整體構成)
如圖1(A)、圖1(B)、圖2所示,熱處理裝置10具備有熱處理爐20、搬送室30、搬送用桿41、搬送用桿42、搬送裝置50、及切換裝置60。
(Overall configuration of heat treatment device 10)
1(A), FIG. 1(B), and FIG. 2, the
熱處理爐20與搬送室30係被配置為沿一個方向(在圖1(A)、圖1(B)中之x方向)排列。熱處理爐20與搬送室30連接。The
熱處理爐20具有對被處理物進行加熱處理的熱處理空間(內部空間)200。熱處理爐20係利用可保持熱處理空間200之環境氣體的腔室所構成。熱處理爐20係在上部之壁構造體設置氣體導入部(未圖示),自氣體導入部朝熱處理空間200內導入既定之環境氣體(熱處理氣體)。
The
在熱處理空間200內配置用以支撐被處理物WK的支撐材230〜233及熱源240。支撐材230〜233係由整體為桿狀且前端變細的陶瓷所構成,且以朝z方向延伸之方式在熱處理空間200內利用未圖示之保持構件所保持。如圖4所示,4個支撐材230〜233係以於x方向排列2個且於y 方向排列2個之方式配置。支撐材230〜233之前端位置係位於高於搬送用桿41及搬送用桿42之上端的位置。
熱源240分別被配置在靠近熱處理空間200上側之壁之位置、及靠近下側之壁之位置。但其不限於此,熱源240亦可被配置在熱處理空間200之側面。熱源240只要可均勻地加熱利用支撐材230〜233所支撐的被處理物WK即可。The
在構成熱處理爐20的壁中之一個側壁(前壁21)形成開口201。開口201貫穿前壁21。熱處理爐20之熱處理空間200,經由該開口201連接於搬送室30之搬送空間(內部空間)300。An
在構成熱處理爐20的其他之壁(上壁)之中央部開設有孔。此外,在被設置在靠近其他之壁(上壁)之位置的熱源240,亦在與上述孔對應的位置設置其他之孔。在該二個孔經由窗部配置作為溫度檢測裝置的放射溫度計250。如後述,放射溫度計250係檢測被搬送至熱處理爐內的被處理物WK之溫度。窗部可利用不吸收藉由放射溫度計250所放射的波長(數μ〜10μ以下)之特性的窗玻璃所構成。A hole is opened in the center of the other wall (upper wall) constituting the
搬送室30具有搬送空間300。在構成搬送室30的壁中之一個側壁(前壁31)形成開口301及開口302(參照圖5)。開口301、302貫穿前壁31。藉由該等開口301、302,搬送用桿41及搬送用桿42可前進與後退。The
搬送室30配置有隔熱壁32。隔熱壁32被配置在搬送室30之熱處理爐20側之端部附近。隔熱壁32為活動式,以切換在搬送空間300中之連接於開口201之側的空間與連接於開口301之側的空間的阻隔及連通。The
搬送用桿41及搬送用桿42係朝向一方向延伸的桿狀(在本案中為圓柱狀)。搬送用桿41及搬送用桿42之材質係利用不易腐蝕之不鏽鋼(SUS)所構成。The
搬送用桿41及搬送用桿42所延伸的方向係與熱處理爐20及搬送室30所排列的方向平行。搬送用桿41與搬送用桿42係隔著既定之距離而平行地被配置。搬送用桿41與搬送用桿42所排列的方向係與x方向及z方向正交的方向(在圖1(A)、圖1(B)中之y方向)。考慮到後述之支撐構件412及支撐構件422之長度,搬送用桿41與搬送用桿42之距離Ws(參照圖2)大於支撐材230〜233之y方向的尺寸為佳。The direction in which the
搬送用桿41與搬送用桿42係插通於被形成於搬送室30之前壁31的第二開口。搬送用桿41之延伸方向的第一端部4111及搬送用桿42之延伸方向的第一端部4211(參照圖2)被配置在搬送室30內側,搬送用桿41之延伸方向的第二端部4112及搬送用桿42之延伸方向的第二端部4212(參照圖6)被配置在搬送室30之外部。The
如後述,搬送用桿41與搬送用桿42分別旋轉45度。將0度時稱為桿狀態A,且將旋轉45度時稱為桿狀態B。詳細如後述,搬送用桿41與搬送用桿42,重複地進行以下之步驟。As will be described later, the
搬送用桿41及搬送用桿42,係
(步驟1)在搬送室30內,在桿狀態B自上方接取被處理物WK。且設定被處理物WK。
Conveying with
(步驟2)在桿狀態B前進,使第一端部4111、4211移動至熱處理爐20內。(Step 2) Advance in the rod state B, and move the
(步驟3)若被處理物WK之溫度上升為既定溫度,則設定為桿狀態A。是否上升為既定溫度,藉由放射溫度計250之輸出被判定。此時,被處理物WK被放置且被支撐在4個支撐材230〜233上。對被處理物WK進行熱處理。(Step 3) When the temperature of the object WK to be processed rises to a predetermined temperature, the rod state A is set. Whether it has risen to a predetermined temperature is judged by the output of the
(步驟4)在桿狀態A後退,使第一端部4111、4211移動至搬送室30內。(Step 4) Move backward in the rod state A, and move the
(步驟5)若結束對被處理物WK之熱處理,則使第一端部4111、4211在桿狀態A前進而移動至熱處理爐20內。(Step 5) When the heat treatment of the object to be processed WK is completed, the
(步驟6)設定為桿狀態B。此時,自支撐材230〜233接取並支撐被處理物WK。(Step 6) Set to the rod state B. At this time, the object to be processed WK is picked up from the
(步驟7)在桿狀態B後退,使第一端部4111、4211移動至搬送室30內。(Step 7) Move backward in the rod state B to move the
(步驟8)在桿狀態B,將被處理物WK取出至外部。(Step 8) In the rod state B, the processed object WK is taken out to the outside.
在x方向上之搬送用桿41之延伸方向的第一端部4111與搬送用桿42之延伸方向的第一端部4211的位置相同,且搬送用桿41之延伸方向的第二端部4112與搬送用桿42之延伸方向的第二端部4212相同。
The
搬送裝置50係以搬送室30作為基準被配置在與熱處理爐20所連接之側於相反側。亦即,搬送裝置50被配置在搬送室30及熱處理爐20之外側。搬送裝置50經由桿保持構件51而連接至搬送用桿41與搬送用桿42。搬送用桿41與搬送用桿42係在朝沿各者之側面的方向可旋轉的狀態(桿狀態A與桿狀態B)被保持於桿保持構件51。
The
搬送裝置50沿前後方向即x方向移動。藉由該搬送裝置50之移動,搬送用桿41與搬送用桿42亦沿前後方向即x方向移動。藉此,如圖1(A)所示,當搬送裝置50位於移動範圍之第一端部時,搬送用桿41之第一端部4111之部分與搬送用桿42之第一端部4211之部分被配置在搬送室30之搬送空間300。另一方面,如圖1(B)所示,當搬送裝置50位於移動範圍之第二端部時,搬送用桿41之第一端部4111之部分與搬送用桿42之第一端部4211之部分被配置在熱處理爐20之熱處理空間200。The
搬送裝置50被配置在熱處理爐20之外側且遠離的位置,因此,搬送裝置50不需要熱對策。搬送裝置50可利用廉價之通用品所構成。Since the
如以上所說明,熱處理裝置10係在搬送室30中,經由開口201將被載置在搬送用桿41之第一端部4111之部分及搬送用桿42之第一端部4211之部分的被處理物WK搬入至熱處理爐20內(圖1(A)→圖1(B))。被搬入至熱處理爐20內的被處理物WK,雖然其溫度較低,但是在熱處理爐20內上升為既定之溫度時成為桿狀態B→桿狀態A,且利用支撐材230〜233被支撐。此時,由於被處理物WK之溫度充分地被加熱,因此當利用支撐材230〜233被支撐時,不會產生對被處理物WK之熱衝擊。As described above, in the
對被處理物WK之熱衝擊,依存於被處理物WK之材料之對熱衝擊溫度特性。對熱衝擊溫度特性係可承受急遽之溫度變化的溫度特性。例如,陶瓷中之氧化鋁之對熱衝擊溫度為200℃左右。The thermal shock to the object WK to be processed depends on the thermal shock temperature characteristic of the material of the object WK to be processed. Thermal shock temperature characteristics are temperature characteristics that can withstand rapid temperature changes. For example, the thermal shock temperature of alumina in ceramics is about 200°C.
因此,以利用支撐材230〜233支撐被處理物WK時之被處理物WK與支撐材230〜233之溫度差成為對熱衝擊溫度以內之方式進行控制。例如,在被處理物WK之被支撐點附近為氧化鋁之情形下,將被處理物WK加熱至上述溫度差成為200℃以內為止。熱控制之具體例為如下。Therefore, when the object to be processed WK is supported by the
假定熱處理爐20內之溫度被保持在1300℃。於被處理物WK即將被搬入至熱處理爐20內之前,被處理物WK之溫度為常溫。若將被處理物WK搬入至熱處理爐20內,則被處理物WK被加熱。此時,由於被處理物WK係在桿狀態B利用搬送用桿41、42被支撐,因此並無對被處理物WK的熱衝擊。若處理物WK之溫度上升至1100℃以上,則將搬送用桿41、42設定為桿狀態A。此時,雖然利用支撐材230〜233支撐被處理物WK,但是兩者之溫度差成為200℃以下。因此,不會對被處理物WK產生熱衝擊。本發明之所謂損傷溫度係指在該例中兩者之溫度差為200℃以上且1100℃以下。Assume that the temperature inside the
再者,支撐材230〜233亦可僅將前端部利用其他之構件所構成。若如此所構成,即使前端部破損亦可容易交換。此外,亦可根據被處理物WK之特性變更前端部。前端部,例如只要藉由螺紋構造安裝至本體部即可。Furthermore, the support members 230-233 can also be formed by using other members only at the front end. According to such a structure, even if a front-end|tip part is damaged, it can replace easily. In addition, it is also possible to change the front end according to the characteristics of the object WK to be processed. For example, the front end portion may be attached to the main body portion by a screw structure.
其次,對切換裝置60與搬送用桿41、42進行說明。Next, the switching
切換裝置60連接至搬送用桿41之第二端部4112及搬送用桿42之第二端部4212。切換裝置60具備有旋轉輔助機構,該旋轉輔助機構係使搬送用桿41及搬送用桿42朝沿各自之側面之方向旋轉而保持在桿狀態A與桿狀態B之任一狀態。The switching
在搬送用桿41配置用以支撐被處理物WK的支撐構件412,且在搬送用桿42配置支撐構件422。A
如圖2所示,支撐構件412為2個,且2個支撐構件412被連接至搬送用桿41之第一端部4111附近(搬送用桿41之第一端部4111之部分)。2個支撐構件412係在搬送用桿41之延伸方向上以間隔LS412被配置。該間隔LS412係藉由於搬送時所支撐的被處理物WK之沿x方向之大小、或被處理物WK之大小而決定,且以2個支撐構件412與被處理物WK之背面接觸之方式被決定。As shown in FIG. 2 , there are two
2個支撐構件412連接至搬送用桿41之側面411。2個支撐構件412係自側面411突出於搬送用桿42側。2個支撐構件412之突出量L412係藉由被處理物WK之高度方向的移動量而被決定。The two
如圖3(A)〜圖3(D)所示,2個支撐構件412係圓桿,且於前端具有外周端413。藉此,當支撐被處理物WK時,外周端413抵接至被處理物WK之背面。亦即,支撐構件412以點可支撐被處理物WK。因此,支撐構件412可最小限地抑制與被處理物WK的接觸。藉此,例如,可抑制因經由抵接至被處理物WK的支撐構件412進行散熱而於被處理物WK產生局部之溫差而被處理物WK變形等之熱的影響。此外,更進一步藉由在x方向排列2個支撐構件412,可穩定地支撐被處理物WK。As shown in Fig. 3 (A) ~ Fig. 3 (D), two supporting
如圖2所示,支撐構件422為2個,且2個支撐構件422被連接至搬送用桿42之第一端部4211附近(搬送用桿42之第一端部4211之部分)。2個支撐構件422係在搬送用桿42之延伸方向上以間隔LS422被配置。該間隔LS422係藉由於搬送時所支撐的被處理物WK之沿x方向的大小而決定,且以2個支撐構件422與被處理物WK之背面接觸之方式被決定。As shown in FIG. 2 , there are two
2個支撐構件422連接至搬送用桿42之側面421。2個支撐構件422自側面421突出於搬送用桿41側。2個支撐構件422之突出量L422係藉由被處理物WK之高度方向的移動量而被決定。The two
圖5(A)、圖5(B)為顯示搬送用桿及支撐構件之動作的圖。圖5(A)為桿狀態B,圖5(B)為桿狀態A。Fig. 5(A) and Fig. 5(B) are diagrams showing the movement of the transport rod and the supporting member. Fig. 5(A) is rod state B, and Fig. 5(B) is rod state A.
與2個支撐構件412同樣,2個支撐構件422係圓桿,且於前端具有外周端423(參照圖5)。藉此,在桿狀態B,當支撐被處理物WK時,外周端423抵接至被處理物WK之背面。亦即,支撐構件422以點可支撐被處理物WK。因此,支撐構件422可最小限地抑制與被處理物WK的接觸。藉此,例如,可抑制因經由抵接至被處理物WK的支撐構件422進行散熱而於被處理物WK產生局部之溫差而被處理物WK變形等之熱的影響。Like the two
此外,藉由於x方向上排列2個支撐構件422,可穩定地支撐被處理物WK。在此,雖然例示了支撐構件411、422為圓桿之例子,但其不限於此,只要為三角柱或多邊形柱之桿狀體、或前端為半球狀之桿狀體等以點接觸支撐被處理物即可。In addition, by arranging the two
(搬送用桿41、42及支撐構件412、422之動作)
如上述,搬送用桿41及搬送用桿42係藉由切換裝置60而旋轉。藉此,支撐構件412及支撐構件422,可取得於圖5(A)所示之桿狀態B(旋轉45度)之姿勢、及於圖5(B)所示之桿狀態A之姿勢。
(Operation of the
在桿狀態B中,支撐構件412之前端成為較搬送用桿41之上端位於上側,且支撐構件422之前端成為較搬送用桿42之上端位於上側。並且,如圖5(A)所示,在桿狀態B中,利用支撐構件412及支撐構件422之前端所被支撐的被處理物WK係較支撐材230〜233之上端被配置於上方。In the rod state B, the front end of the
桿狀態A(旋轉0度)係支撐構件412之前端成為較搬送用桿41之上端位於下側,且支撐構件422之前端成為較搬送用桿42之上端位於下側的態樣。Rod state A (rotation 0 degrees) is a state in which the front end of the
因此,藉由利用該切換,於搬送室30內以桿狀態B將被處理物WK載置於支撐構件412及支撐構件422,然後維持該狀態搬送至熱處理爐20內,藉此將被處理物WK搬運至支撐材230〜233之上方。Therefore, by utilizing this switching, the object to be processed WK is placed on the
若被處理物WK被加熱至既定之溫度,則切換至桿狀態A,被處理物WK自藉由支撐構件412及支撐構件422所進行之支撐被解除,而利用支撐材230〜233被支撐。When the processed object WK is heated to a predetermined temperature, it switches to the rod state A, and the processed object WK is released from the support by the supporting
在熱處理空間200內對被處理物WK進行熱處理之後,若在桿狀態A將搬送用桿41、42插入至熱處理爐20內,則搬送用桿41、42被配置在被處理物WK之下方。亦即,搬送用桿41、42不與被處理物WK碰撞而被配置在熱處理爐20內。After the object WK is heat-treated in the
在該狀態中,使搬送用桿41、42旋轉45度切換為桿狀態B。於是,被處理物WK自藉由支撐材230〜233所進行之支撐被切換為藉由支撐構件412及支撐構件422所進行之支撐。藉此,被處理物WK與支撐材230〜233分離。然後,在該狀態下進行搬送,將被處理物WK自熱處理爐20內搬出至搬送室30。In this state, the rod state B is switched by rotating the
如此,藉由使用本實施形態之構成,無需改變搬送用桿41、42之高度方向的位置,將被處理物WK自搬送室30內搬送至熱處理爐20內,且在將被處理物WK加熱處理至既定之溫度之後,利用支撐材230〜233來支撐。然後,對被處理物WK進行熱處理,且將被處理物WK自支撐材230〜233抬起,自熱處理爐20內搬送至搬送室30內。Thus, by using the configuration of the present embodiment, the workpiece WK is transferred from the
藉此,開口201之高度可為自搬送用桿41、42之下端至被處理物WK之上面的高度。因此,可減小開口201之開口面積,且可抑制熱處理爐20之熱、及所被充填的氣體經由開口201洩漏至搬送室30。亦即,可抑制因具有開口201而所引起的熱處理爐20之溫度及環境氣體之變化。惟,在較佳之實施例中,以熱處理空間200與搬送空間300之環境氣體成為相同之方式,將冷卻氣體P設定為與熱處理空間200內之氣體相同的氣體。或者,將兩者之主要成分設定為相同。藉此,即使藉由隔熱壁32重複地進行開口201之開閉,仍可將熱處理空間200與搬送空間300之環境氣體保持為同一。Thereby, the height of the
此外,包含切換裝置60與搬送裝置50的驅動裝置,係被設置在熱處理爐20與搬送室30之外側,且遠離其等的位置。因此,切換裝置60與搬送裝置50,不需要為對應高溫之零件,可利用廉價之通用零件所構成。In addition, the driving device including the
此外,藉由使用本實施形態之構成,可降低搬送室30之高度。藉此,可減小搬送室30之體積,進而可減少用於搬送室30的氣體之使用量,而且亦可減少搬送室30之環境氣體的置換時間。Moreover, the height of the
此外,藉由使用本實施形態之構成,可減小開口301、302之開口面積。圖6為顯示被形成於搬送室之前壁的開口與搬送用桿的圖。In addition, by using the configuration of this embodiment, the opening areas of the
如上述,於熱處理裝置10中,搬送用桿41、42僅沿x方向移動而不沿z方向移動。因此,開口301、302,只要為僅供搬送用桿41、42所插通的大小即可,例如,只要為沿搬送用桿41、42之外形(圓周面)的形狀且略大於搬送用桿41、42之外形即可。例如,開口301、302只要為與搬送用桿41、42之剖面形狀相同的形狀且大致相同尺寸之圓形的開口即可。As mentioned above, in the
更具體而言,開口301之直徑
301,只要與搬送用桿41之直徑
41大致相同且較其大即可。此時,開口301之直徑
301越接近搬送用桿41之直徑
41越佳。再者,開口301之直徑
301只要短於在支撐構件412之第一態樣中之搬送用桿41之下端與支撐構件412之上端的距離H41即可。
More specifically, the diameter of the
同樣地,開口302之直徑
302,只要與搬送用桿42之直徑
42大致相同且較其大即可。此時,開口302之直徑
302越接近搬送用桿42之直徑
42越佳。再者,開口302之直徑
302只要短於在支撐構件422之第一態樣中之搬送用桿42之下端與支撐構件422之上端的距離H42即可。
Similarly, the diameter of the
藉由此種構成,可減小開口301、302之開口面積。藉此,可減小經由開口301、302連通搬送室30與外部的面積。因此,可減少外部之溫度及環境氣體對搬送室30之內部之溫度及環境氣體的影響。進而,可減少經由搬送室30對熱處理爐20之內部之溫度及環境氣體的影響。With this configuration, the opening areas of the
再者,使搬送用桿41、42旋轉的切換裝置60,例如,藉由於圖7(A)、圖7(B)所示之構成而被實現。圖7(A)、圖7(B)為顯示切換裝置之一構成例的圖,圖7(A) 對應於圖5(A)之桿狀態B,圖7(B) 對應於圖5(B)之桿狀態A。In addition, the switching
如圖7(A)、圖7(B)所示,切換裝置60具備有軸611、軸621、滑動板612、滑動板622、結合板63、軸構件601、及致動器602。As shown in FIG. 7(A) and FIG. 7(B), the switching
軸611係自搬送用桿41朝搬送用桿42側延伸的形狀。軸611之第一端部被固定於搬送用桿41之第二端部4112。軸611之第二端部連接於滑動板612。此時,於滑動板612上形成有沿y方向延伸的溝613,軸611之第二端部係藉由將被配置於該第二端部的銷614嵌入至溝613,而可滑動地連接至滑動板612。The
軸621係自搬送用桿42朝搬送用桿41側延伸的形狀。軸621之第一端部被固定於搬送用桿42之第二端部4212。軸621之第二端部連接於滑動板622。此時,於滑動板622上形成有沿y方向延伸之溝623,軸621之第二端部係藉由將被配置於該第二端部的銷624嵌入至溝623,而可滑動地連接至滑動板622。The
滑動板612及滑動板622被固定於結合板63。更具體而言,滑動板612被固定於在結合板63中之y方向的第一端部,且滑動板622被固定於在結合板63中之y方向的第二端部。The sliding
於結合板63之y方向的中心,連接有朝z方向延伸的軸構件601之第一端部。軸構件601之第二端部被連接至致動器602。A first end portion of the
於此種構成中,藉由致動器602使軸構件601之長度產生變化,藉此使結合板63、滑動板612及滑動板622之z方向的位置產生變化。伴隨此變化,銷614於溝613內移動(滑動),銷624於溝623內移動(滑動)。然後,軸611伴隨銷614之移動而轉動,且軸621伴隨銷624之移動而轉動。藉由其等軸611、621之轉動,搬送用桿41、42進行旋轉。In such a configuration, the length of the
藉由將此種構成使用於切換裝置60,可使搬送用桿41之旋轉與搬送用桿42之旋轉同步。因此,可穩定地進行被處理物WK之抬起等。By using such a configuration for the
再者,具備以上構成的熱處理裝置10,例如可藉由進行如圖8、圖9所示之處理,而進行被處理物WK之熱處理。Furthermore, the
圖8(A)、圖8(B)、圖8(C)、圖8(D)、圖8(E)為顯示自熱處理裝置之外部投入被處理物WK至進行熱處理為止的步驟的圖。圖9(A)、圖9(B)、圖9(C)、圖9(D)為顯示自被處理物WK之熱處理後至將被處理物WK取出至熱處理裝置之外部為止的步驟的圖。此外,圖10係利用流程圖顯示於圖8、圖9所示的步驟。8(A), FIG. 8(B), FIG. 8(C), FIG. 8(D), and FIG. 8(E) are diagrams showing the steps from feeding the object WK from outside the heat treatment apparatus to heat treatment. 9(A), FIG. 9(B), FIG. 9(C), and FIG. 9(D) are diagrams showing steps from the heat treatment of the object WK to the removal of the object WK to the outside of the heat treatment apparatus. . In addition, FIG. 10 is a flowchart showing the steps shown in FIG. 8 and FIG. 9 .
首先,如圖8(A)所示,於搬送用桿41、42之第一端部4111、4211位於搬送室30內的狀態下,自投入口39投入被處理物WK(ST1)。此時,支撐構件412、422為桿狀態B,且被處理物WK被放置於支撐構件412、422上。於該狀態下,隔熱壁32係以將搬送室30之搬送空間300分隔為搬送用桿41、42所存在之側及與開口201連接之側之方式被設置。藉此,可抑制投入口39與開口201直接連接。如上述,於投入被處理物WK之後,使投入口39成為關閉的狀態。並且,當將被處理物WK投入至搬送室30內時,為了去除自投入口39所混入的外部空氣,進行搬送室30之置換處理。該置換處理係藉由朝搬送室30內供給氮氣等之沖洗氣體而被進行,搬送室30內之空氣被沖洗氣體所趕出。藉此,將搬送室30內之環境氣體被置換為氮氣等之惰性氣體之環境氣體。First, as shown in FIG. 8(A), in the state where the first ends 4111, 4211 of the
其次,如圖8(B)所示,於關閉投入口39的狀態下,隔熱壁32朝上方移動。藉此,成為經由開口201可將搬送用桿41、42及被處理物WK搬入至熱處理爐20的狀態。Next, as shown in FIG. 8(B), in a state where the
接著,如圖8(C)所示,藉由搬送裝置50移動搬送用桿41、42(ST2),將搬送用桿41、42之第一端部4111、4211插入至熱處理爐20內。藉此,將被處理物WK搬送至支撐材230〜233之上方。Next, as shown in FIG. 8(C), the first ends 4111, 4211 of the
在該狀態下,將被處理物WK之溫度加熱。被處理物WK之溫度係利用放射溫度計250被測定,直到其溫度達到至既定溫度為止進行待機(ST3、ST4)。In this state, the temperature of the object to be processed WK is heated. The temperature of the object to be processed WK is measured by the
若被處理物WK之溫度達到至既定溫度,則決定使支撐材230〜233支撐被處理物WK的時機,如圖8(D)所示,將支撐構件412、422自桿狀態B切換至桿狀態A,利用支撐材230〜233支撐被處理物WK(ST5)。When the temperature of the processed object WK reaches a predetermined temperature, the timing for supporting the processed object WK by the
接著,如圖8(E)所示,藉由搬送裝置50移動搬送用桿41、42,使搬送用桿41、42之第一端部4111、4211退回至搬送室30內(ST6)。於該狀態下,隔熱壁32朝下方移動,將搬送室30之搬送空間300分隔為搬送用桿41、42所存在之側及與開口201連接之側。換言之,隔熱壁32成為將開口201封閉的構造而形成密封空間。Next, as shown in FIG. 8(E), the first ends 4111, 4211 of the
然後,於該狀態下,將熱處理爐20控制為既定之溫度、環境氣體,且對被處理物WK進行既定時間之熱處理(ST7)。Then, in this state, the
對被處理物WK進行熱處理之後,如圖9(A)所示,隔熱板32朝上方移動。然後,移動搬送用桿41、42,使搬送用桿41、42之第一端部4111、4211到達至熱處理爐20內的被處理物WK之下方(ST8)。此時,因為支撐構件412、422處於桿狀態A,因此即使搬送用桿41、42之第一端部4111、4211靠近至被處理物WK,亦不碰撞至被處理物WK。After heat-processing the object WK, as shown in FIG. 9(A), the
接著,如圖9(B)所示,將支撐構件412、422自桿狀態A切換為桿狀態B,被處理物WK自支撐材230〜233被抬起。並且,藉由支撐構件412、422支撐被處理物WK(ST9)。Next, as shown in FIG. 9(B), the
接著,如圖9(C)所示,藉由搬送裝置50移動搬送用桿41、42,使搬送用桿41、42之第一端部4111、4211移動至搬送室30內 (ST10)。藉此,將被處理物WK自熱處理爐20搬出至搬送室30內。Next, as shown in FIG. 9(C), the first ends 4111, 4211 of the conveying
接著,如圖9(D)所示,隔熱板32朝下方移動,將搬送室30之搬送空間300分隔為搬送用桿41、42所存在之側及與開口201連接之側。於該狀態下,藉由開啟投入口39,將被處理物WK取出至熱處理裝置10之外部(ST11)。Next, as shown in FIG. 9(D), the
於如此之熱處理步驟中,熱處理爐20與搬送室30之間的開口201及搬送室30與外部的開口301,對熱處理爐20及搬送室30之環境氣體的維持產生影響。然而,藉由具備有本實施形態之構成,可減小開口201及開口301之開口面積,從而可抑制對熱處理爐20及搬送室30之環境氣體之維持的影響。亦即,可抑制開口201、301對熱處理爐20及搬送室30之環境氣體之維持所造成的損失,可有效率地進行熱處理爐20及搬送室30之環境氣體的維持。In such a heat treatment step, the
此外,在ST4中被處理物WK被加熱至成為既定溫度為止,然後利用支撐材230〜233被支撐,因此在利用支撐材230〜233支撐被處理物WK時不會產生熱衝擊。In addition, in ST4, the object to be processed WK is heated to a predetermined temperature and then supported by the
(切換支撐構件之態樣之其他之例子)
再者,於上述說明中,顯示了藉由使搬送用桿41、42旋轉而使在高度方向(z方向)上之支撐構件412、422之前端的位置產生變化的態樣。然而,亦可藉由其他之構成,使在高度方向上之支撐構件412、422之前端的位置產生變化。圖11(A)、圖11(B)為示意地顯示支撐構件之其他之一例的圖。圖11(A)、圖11(B)係自支撐構件之第一端部側所觀察的圖。
(Other examples of changing the form of the supporting member)
In addition, in the said description, the aspect which changed the position of the front-end|tip of the support member 412,422 in the height direction (z direction) by rotating the
支撐構件412、422,具有於圖11(A)所示之自搬送用桿41、42之上端突出的桿狀態B、及於圖11(B)所示之被收納於搬送用桿41、42內的桿狀態A。使支撐構件412、422自搬送用桿41、42之上端突出、或收納於搬送用桿41、42內的機構,亦可為物理性地將支撐構件412、422推出或引入的機構,亦可為使用壓縮空氣等將支撐構件412、422推出或引入的機構。此外,亦可為其他之機構。即使為此種構成,亦可獲得與使用使上述搬送用桿41、42旋轉的機構之構成相同的作用功效。The
並且,於上述說明中,作為搬送用桿,顯示了使用一對搬送用桿41、42之例子,但上述之構成不限於此,亦也使用一個搬送用桿。於該情形下,可移動一個搬送用桿41而將被處理物WK搬入至熱處理爐20。In addition, in the above description, an example using a pair of conveying
圖12為顯示搬送用桿之衍生例之構成的部分之俯視圖。例如,如圖12所示,只要將一個搬送用桿41在其之前端部分歧成二叉狀,且於該二叉部之一端及其他端分別配置支撐構件412、422之構造即可。另外,在此時關於支撐構件412、422之桿狀態B與桿狀態A之切換,例如,可與在上述圖11(A)、圖11(B)所示之例子相同,將支撐構件412、422切換為自上述二叉部之一端及其他端突出的桿狀態B及被收納於上述二叉部之一端及其他端內的桿狀態A。Fig. 12 is a partial plan view showing the configuration of a derivative example of the transport rod. For example, as shown in FIG. 12 , it is only necessary to divide a
此外,上述已顯示了將環境氣體爐作為熱處理爐20之例子,但上述構成不限於環境氣體爐,亦可適用於其他規格之熱處理爐。In addition, the above has shown an example in which the ambient gas furnace is used as the
(使搬送用桿41、42旋轉的其他之例子)
在上述說明中,雖然使用包含致動器602的切換裝置60使搬送用桿41、42旋轉,但是可使用馬達600使搬送用桿41、42旋轉。
(Another example of rotating the
圖13係顯示在搬送用桿41之第二端部4112設置馬達650,且在搬送用桿42之第二端部4212(參照圖7)設置馬達651的實施例。馬達650與馬達651的定子被固定在搬送裝置50,各馬達之轉子之旋轉部分別被連結至第二端部4112及第二端部4212。馬達650及馬達651係較佳為利用僅旋轉既定之角度的步進馬達所構成。此外,馬達650及馬達651係利用圖外之控制電路被同步,且以其旋轉角度同一之方式被控制。如此,藉由在第二端部4112及第二端部4212設置馬達650、651,使構造簡易化。FIG. 13 shows an embodiment in which a
(使搬送用桿41、42旋轉的其他之例子)
圖14係顯示使搬送用桿41、42旋轉的另一個其他之例子。
(Another example of rotating the
在本實施例中,將切換裝置60設為包含齒條/小齒輪機構的構造。切換裝置60係利用被設置在搬送用桿41之第二端部4112側的齒條/小齒輪機構700、及被設置在搬送用桿42之第二端部4212側的齒條/小齒輪機構800所構成。In the present embodiment, the switching
齒條/小齒輪機構700係利用被連結至搬送用桿41之第二端部4112的小齒輪702、與該小齒輪702咬合的桿狀之齒條703、及使齒條703上下運動的汽缸701所構成。同樣地,齒條/小齒輪機構800係利用被連結至搬送用桿42之第二端部4212的小齒輪802、與該小齒輪802咬合的桿狀之齒條803、及使齒條803上下運動的汽缸801所構成。此外,設置控制汽缸701、801的控制部(未圖示)。控制部係同步控制汽缸701、801,使齒條703與齒條803上下移動僅相同量。圖14(A)係顯示齒條703與齒條803朝上方移動而成為桿狀態B的情形,圖14(B)係顯示齒條703與齒條803自桿狀態B朝下方移動而成為桿狀態A的情形。The rack/
如此,即使將齒條/小齒輪機構設置於切換裝置60,亦可使搬送用桿41、42既定旋轉僅相同角度。In this way, even if the rack/pinion mechanism is provided in the
上述實施形態之說明,應被認為所有態樣皆為例示性而已,並非具限制性者。本發明之範圍係藉由申請專利之範圍所定義而非上述之實施形態。並且,本發明之範圍包含與申請專利之範圍均等之含義及範圍內之所有變更。All the descriptions of the above-mentioned embodiments should be considered as illustrative and not restrictive. The scope of the present invention is defined by the scope of the patent application rather than the above-mentioned embodiments. In addition, the scope of the present invention includes the meaning equivalent to the scope of the patent application and all modifications within the scope.
10:熱處理裝置 20:熱處理爐 21:前壁 30:搬送室 31:前壁 32:隔熱壁 39:投入口 41:搬送用桿 42:搬送用桿 50:搬送裝置 51:桿保持構件 60:切換裝置 63:結合板 200:熱處理空間 201:開口 230〜233:支撐材 240:熱源 250:放射溫度計 300:搬送空間 301:開口 302:開口 411:搬送用桿41之側面 412:支撐構件 413:外周端 421:搬送用桿42之側面 422:支撐構件 423:支撐構件422之外周端 601:軸構件 602:致動器 611:軸 612:滑動板 613:滑動板612之溝 614:銷 621:軸 622:滑動板 623:滑動板622之溝 624:銷 650:馬達 651:馬達 700:齒條/小齒輪機構 701:汽缸 702:小齒輪 703:齒條 800:齒條/小齒輪機構 801:汽缸 802:小齒輪 803:齒條 4111:搬送用桿41之第一端部 4112:搬送用桿41之第二端部 4211:搬送用桿42之第一端部 4212:搬送用桿42之第二端部 H41:距離 H42:距離 L412:突出量 L422:突出量 LS412:間隔 LS422:間隔 WK:被處理物 Ws:距離 10: Heat treatment device 20: Heat treatment furnace 21: front wall 30: transfer room 31: front wall 32: Insulation wall 39: input port 41: Transport rod 42: Transport rod 50: Conveying device 51: Rod holding member 60:Switch device 63: Combined board 200: heat treatment space 201: opening 230~233: support material 240: heat source 250: radiation thermometer 300: Moving space 301: opening 302: opening 411: the side of the transport rod 41 412: Support member 413: peripheral end 421: The side of the transport rod 42 422: support member 423: the outer peripheral end of the supporting member 422 601: shaft member 602: Actuator 611: Shaft 612: slide plate 613: the groove of sliding plate 612 614: pin 621: axis 622: slide plate 623: the groove of sliding plate 622 624: pin 650: motor 651: motor 700: rack/pinion mechanism 701: Cylinder 702: pinion gear 703: Rack 800: rack/pinion mechanism 801: Cylinder 802: Pinion 803: Rack 4111: the first end of the conveying rod 41 4112: the second end of the conveying rod 41 4211: the first end of the conveying rod 42 4212: the second end of the transport rod 42 H41: Distance H42: Distance L412: Protrusion amount L422: Protrusion amount LS412: Interval LS422: Interval WK: object to be processed Ws: distance
圖1(A)及圖1(B)為顯示本發明之實施形態之熱處理裝置之概略構成的側視圖。 圖2為搬送用桿之前端部(第一端部)的俯視圖。 圖3(A)為側視圖,圖3(B)為搬送用桿之前端部(第一端部)的俯視圖,圖3(C)為端面圖,圖3(D)為外觀立體圖。 圖4為顯示在熱處理空間之z方向上被處理物、支撐材之位置關係的圖。 圖5(A)及圖5(B)為顯示搬送用桿及支撐構件之動作的圖。 圖6為顯示被形成於搬送室之前壁的開口及搬送用桿的圖。 圖7(A)及圖7(B)為顯示切換裝置之一構成例的圖。 圖8(A)、圖8(B)、圖8(C)、圖8(D)及圖8(E)為顯示自熱處理裝置之外部投入被處理物且至進行熱處理為止之步驟的圖。 圖9(A)、圖9(B)、圖9(C)及圖9(D)為顯示自被處理物之熱處理之後至將被處理物取出至熱處理裝置之外部為止之步驟的圖。 圖10為顯示整體之動作的流程圖。 圖11(A)及圖11(B)為示意地顯示支撐構件之其他之一例的圖。 圖12為顯示搬送用桿之衍生例之構成的部分之俯視圖。 圖13(A)及圖13(B)為顯示使搬送用桿旋轉之衍生例之構成的圖。 圖14(A)及圖14(B)為顯示使搬送用桿旋轉之其他衍生例的部分之構成的圖。 FIG. 1(A) and FIG. 1(B) are side views showing a schematic configuration of a heat treatment apparatus according to an embodiment of the present invention. Fig. 2 is a plan view of the front end (first end) of the transport rod. 3(A) is a side view, FIG. 3(B) is a top view of the front end (first end) of the transport rod, FIG. 3(C) is an end view, and FIG. 3(D) is an external perspective view. Fig. 4 is a diagram showing the positional relationship between the object to be processed and the support in the z direction of the heat treatment space. Fig. 5(A) and Fig. 5(B) are diagrams showing the movement of the transport rod and the supporting member. Fig. 6 is a view showing an opening formed in the front wall of the transfer chamber and a transfer rod. 7(A) and 7(B) are diagrams showing a configuration example of a switching device. FIG. 8(A), FIG. 8(B), FIG. 8(C), FIG. 8(D) and FIG. 8(E) are diagrams showing the steps from feeding the object to be processed from the outside of the heat treatment apparatus to heat treatment. 9(A), FIG. 9(B), FIG. 9(C) and FIG. 9(D) are diagrams showing the steps from the heat treatment of the object to the removal of the object to the outside of the heat treatment apparatus. Fig. 10 is a flowchart showing the overall operation. 11(A) and 11(B) are diagrams schematically showing another example of the supporting member. Fig. 12 is a partial plan view showing the configuration of a derivative example of the transport rod. Fig. 13(A) and Fig. 13(B) are diagrams showing the configuration of a derivative example in which the transport rod is rotated. Fig. 14(A) and Fig. 14(B) are diagrams showing the configuration of parts of other derivative examples in which the transport rod is rotated.
10:熱處理裝置 10: Heat treatment device
20:熱處理爐 20: Heat treatment furnace
21:前壁 21: front wall
30:搬送室 30: transfer room
31:前壁 31: front wall
32:隔熱壁 32: Insulation wall
41:搬送用桿 41: Transport rod
50:搬送裝置 50: Conveying device
51:桿保持構件 51: Rod holding member
60:切換裝置 60:Switch device
200:熱處理空間 200: heat treatment space
201:開口 201: opening
230~233:支撐材 230~233: support material
240:熱源 240: heat source
250:放射溫度計 250: radiation thermometer
300:搬送空間 300: Moving space
301:開口 301: opening
411:搬送用桿41之側面
411: the side of the
412:支撐構件 412: Support member
4111:搬送用桿41之第一端部
4111: the first end of the conveying
4112:搬送用桿41之第二端部
4112: the second end of the
WK:被處理物 WK: object to be processed
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TW201405644A (en) * | 2012-07-30 | 2014-02-01 | Applied Materials Israel Ltd | System and method for temperature control of a semiconductor wafer |
TW202008491A (en) * | 2018-07-26 | 2020-02-16 | 日商國際電氣股份有限公司 | Method of manufacturing semiconductor device |
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JP4348597B2 (en) * | 2002-11-12 | 2009-10-21 | 東海高熱工業株式会社 | Batch furnace for continuous firing verification |
JP5861080B2 (en) * | 2012-04-26 | 2016-02-16 | パナソニックIpマネジメント株式会社 | Hot air circulation heating device |
JP6539929B2 (en) | 2015-12-21 | 2019-07-10 | 昭和電工株式会社 | Wafer supporting mechanism, chemical vapor deposition apparatus and method of manufacturing epitaxial wafer |
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TW201405644A (en) * | 2012-07-30 | 2014-02-01 | Applied Materials Israel Ltd | System and method for temperature control of a semiconductor wafer |
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