TWI772549B - 兩面曝光裝置及兩面曝光方法 - Google Patents
兩面曝光裝置及兩面曝光方法 Download PDFInfo
- Publication number
- TWI772549B TWI772549B TW107138121A TW107138121A TWI772549B TW I772549 B TWI772549 B TW I772549B TW 107138121 A TW107138121 A TW 107138121A TW 107138121 A TW107138121 A TW 107138121A TW I772549 B TWI772549 B TW I772549B
- Authority
- TW
- Taiwan
- Prior art keywords
- mask
- calibration
- substrate
- mark
- exposure
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims abstract description 164
- 238000004364 calculation method Methods 0.000 claims description 10
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 abstract description 22
- 230000008030 elimination Effects 0.000 description 19
- 230000002159 abnormal effect Effects 0.000 description 11
- 239000003550 marker Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000013598 vector Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2032—Simultaneous exposure of the front side and the backside
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Indication In Cameras, And Counting Of Exposures (AREA)
- Separation By Low-Temperature Treatments (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-210654 | 2017-10-31 | ||
JP2017210654A JP6994806B2 (ja) | 2017-10-31 | 2017-10-31 | 両面露光装置及び両面露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201933432A TW201933432A (zh) | 2019-08-16 |
TWI772549B true TWI772549B (zh) | 2022-08-01 |
Family
ID=66295507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107138121A TWI772549B (zh) | 2017-10-31 | 2018-10-29 | 兩面曝光裝置及兩面曝光方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6994806B2 (ko) |
KR (2) | KR102622294B1 (ko) |
CN (2) | CN117806134A (ko) |
TW (1) | TWI772549B (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7458950B2 (ja) * | 2020-09-23 | 2024-04-01 | 株式会社Screenホールディングス | 描画システム |
CN114518695B (zh) * | 2020-11-20 | 2024-09-17 | 源卓微纳科技(苏州)股份有限公司 | 一种双面曝光系统的校正方法和曝光方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000099158A (ja) * | 1998-09-18 | 2000-04-07 | Orc Mfg Co Ltd | ワークとマスクの整合機構および整合方法 |
TW200720855A (en) * | 2005-10-25 | 2007-06-01 | San Ei Giken Inc | Exposure method and exposure apparatus |
TW201107903A (en) * | 2009-08-28 | 2011-03-01 | Ushio Electric Inc | Two-side exposure device |
TW201411296A (zh) * | 2012-09-13 | 2014-03-16 | Nippon Mektron Kk | 光掩模、光掩模組、曝光裝置以及曝光方法 |
TW201617736A (zh) * | 2014-11-11 | 2016-05-16 | Beac Co Ltd | 曝光裝置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2600027B2 (ja) * | 1991-05-16 | 1997-04-16 | 日立テクノエンジニアリング株式会社 | 画像位置合わせ方法およびその装置 |
JPH08160542A (ja) * | 1994-12-02 | 1996-06-21 | Nippon Seiko Kk | 露光装置 |
JP2000155430A (ja) | 1998-11-24 | 2000-06-06 | Nsk Ltd | 両面露光装置における自動アライメント方法 |
JP2005121959A (ja) * | 2003-10-17 | 2005-05-12 | Pentax Corp | 両面露光装置 |
JP2006278648A (ja) | 2005-03-29 | 2006-10-12 | Nsk Ltd | 両面露光方法 |
JP2012089723A (ja) * | 2010-10-21 | 2012-05-10 | Ushio Inc | コンタクト露光方法および装置 |
JP5997409B1 (ja) | 2016-05-26 | 2016-09-28 | 株式会社 ベアック | 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法 |
JP7378910B2 (ja) | 2017-10-31 | 2023-11-14 | 株式会社アドテックエンジニアリング | 両面露光装置及び両面露光方法 |
JP7412872B2 (ja) | 2017-10-31 | 2024-01-15 | 株式会社アドテックエンジニアリング | 両面露光装置 |
-
2017
- 2017-10-31 JP JP2017210654A patent/JP6994806B2/ja active Active
-
2018
- 2018-10-29 TW TW107138121A patent/TWI772549B/zh active
- 2018-10-30 KR KR1020180130946A patent/KR102622294B1/ko active IP Right Grant
- 2018-10-31 CN CN202410091928.9A patent/CN117806134A/zh active Pending
- 2018-10-31 CN CN201811284543.5A patent/CN109725502B/zh active Active
-
2024
- 2024-01-02 KR KR1020240000262A patent/KR20240005244A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000099158A (ja) * | 1998-09-18 | 2000-04-07 | Orc Mfg Co Ltd | ワークとマスクの整合機構および整合方法 |
TW200720855A (en) * | 2005-10-25 | 2007-06-01 | San Ei Giken Inc | Exposure method and exposure apparatus |
TW201107903A (en) * | 2009-08-28 | 2011-03-01 | Ushio Electric Inc | Two-side exposure device |
TW201411296A (zh) * | 2012-09-13 | 2014-03-16 | Nippon Mektron Kk | 光掩模、光掩模組、曝光裝置以及曝光方法 |
TW201617736A (zh) * | 2014-11-11 | 2016-05-16 | Beac Co Ltd | 曝光裝置 |
Also Published As
Publication number | Publication date |
---|---|
CN109725502B (zh) | 2024-02-06 |
CN109725502A (zh) | 2019-05-07 |
JP6994806B2 (ja) | 2022-01-14 |
KR20240005244A (ko) | 2024-01-11 |
KR20190049563A (ko) | 2019-05-09 |
CN117806134A (zh) | 2024-04-02 |
TW201933432A (zh) | 2019-08-16 |
KR102622294B1 (ko) | 2024-01-08 |
JP2019082612A (ja) | 2019-05-30 |
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