TWI772549B - 兩面曝光裝置及兩面曝光方法 - Google Patents

兩面曝光裝置及兩面曝光方法 Download PDF

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Publication number
TWI772549B
TWI772549B TW107138121A TW107138121A TWI772549B TW I772549 B TWI772549 B TW I772549B TW 107138121 A TW107138121 A TW 107138121A TW 107138121 A TW107138121 A TW 107138121A TW I772549 B TWI772549 B TW I772549B
Authority
TW
Taiwan
Prior art keywords
mask
calibration
substrate
mark
exposure
Prior art date
Application number
TW107138121A
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English (en)
Chinese (zh)
Other versions
TW201933432A (zh
Inventor
名古屋淳
Original Assignee
日商亞多特克工程股份有限公司
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Application filed by 日商亞多特克工程股份有限公司 filed Critical 日商亞多特克工程股份有限公司
Publication of TW201933432A publication Critical patent/TW201933432A/zh
Application granted granted Critical
Publication of TWI772549B publication Critical patent/TWI772549B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Indication In Cameras, And Counting Of Exposures (AREA)
TW107138121A 2017-10-31 2018-10-29 兩面曝光裝置及兩面曝光方法 TWI772549B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017210654A JP6994806B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法
JP2017-210654 2017-10-31

Publications (2)

Publication Number Publication Date
TW201933432A TW201933432A (zh) 2019-08-16
TWI772549B true TWI772549B (zh) 2022-08-01

Family

ID=66295507

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107138121A TWI772549B (zh) 2017-10-31 2018-10-29 兩面曝光裝置及兩面曝光方法

Country Status (4)

Country Link
JP (1) JP6994806B2 (ko)
KR (2) KR102622294B1 (ko)
CN (2) CN109725502B (ko)
TW (1) TWI772549B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114518695A (zh) * 2020-11-20 2022-05-20 苏州源卓光电科技有限公司 一种双面曝光系统的校正方法和曝光方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000099158A (ja) * 1998-09-18 2000-04-07 Orc Mfg Co Ltd ワークとマスクの整合機構および整合方法
TW200720855A (en) * 2005-10-25 2007-06-01 San Ei Giken Inc Exposure method and exposure apparatus
TW201107903A (en) * 2009-08-28 2011-03-01 Ushio Electric Inc Two-side exposure device
TW201411296A (zh) * 2012-09-13 2014-03-16 Nippon Mektron Kk 光掩模、光掩模組、曝光裝置以及曝光方法
TW201617736A (zh) * 2014-11-11 2016-05-16 Beac Co Ltd 曝光裝置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2600027B2 (ja) * 1991-05-16 1997-04-16 日立テクノエンジニアリング株式会社 画像位置合わせ方法およびその装置
JPH08160542A (ja) * 1994-12-02 1996-06-21 Nippon Seiko Kk 露光装置
JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP2005121959A (ja) * 2003-10-17 2005-05-12 Pentax Corp 両面露光装置
JP2006278648A (ja) 2005-03-29 2006-10-12 Nsk Ltd 両面露光方法
JP2012089723A (ja) * 2010-10-21 2012-05-10 Ushio Inc コンタクト露光方法および装置
JP5997409B1 (ja) 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法
JP7412872B2 (ja) 2017-10-31 2024-01-15 株式会社アドテックエンジニアリング 両面露光装置
JP7378910B2 (ja) 2017-10-31 2023-11-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000099158A (ja) * 1998-09-18 2000-04-07 Orc Mfg Co Ltd ワークとマスクの整合機構および整合方法
TW200720855A (en) * 2005-10-25 2007-06-01 San Ei Giken Inc Exposure method and exposure apparatus
TW201107903A (en) * 2009-08-28 2011-03-01 Ushio Electric Inc Two-side exposure device
TW201411296A (zh) * 2012-09-13 2014-03-16 Nippon Mektron Kk 光掩模、光掩模組、曝光裝置以及曝光方法
TW201617736A (zh) * 2014-11-11 2016-05-16 Beac Co Ltd 曝光裝置

Also Published As

Publication number Publication date
CN109725502A (zh) 2019-05-07
TW201933432A (zh) 2019-08-16
KR20190049563A (ko) 2019-05-09
CN109725502B (zh) 2024-02-06
KR20240005244A (ko) 2024-01-11
JP6994806B2 (ja) 2022-01-14
KR102622294B1 (ko) 2024-01-08
JP2019082612A (ja) 2019-05-30
CN117806134A (zh) 2024-04-02

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