TWI772341B - Manufacturing method of light-emitting diode chip and light-emitting diode chip - Google Patents

Manufacturing method of light-emitting diode chip and light-emitting diode chip Download PDF

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TWI772341B
TWI772341B TW106142350A TW106142350A TWI772341B TW I772341 B TWI772341 B TW I772341B TW 106142350 A TW106142350 A TW 106142350A TW 106142350 A TW106142350 A TW 106142350A TW I772341 B TWI772341 B TW I772341B
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wafer
transparent substrate
transparent
light
emitting diode
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TW201828499A (en
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岡村卓
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日商迪思科股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

本發明的課題,係提供可獲得充分亮度之發光二極體晶片的製造方法及發光二極體晶片。   本發明的解決手段是一種發光二極體晶片的製造方法,其特徵為具備準備具有於結晶成長用的透明基板上形成包含發光層之複數半導體層的層積體層,且於該層積體層的表面藉由相互交叉之複數預定分割線所區劃的各區域,分別形成LED電路的晶圓的晶圓準備工程、於該晶圓的背面,對應各LED電路而形成複數凹部或溝的晶圓背面加工工程、將第1透明基板的表面黏合於晶圓的背面,以形成第1一體化晶圓的第1透明基板黏合工程、在實施該第1透明基板黏合工程之後,將第2透明基板的表面黏合於該第1透明基板的背面,以形成第2一體化晶圓的第2透明基板黏合工程、及將該晶圓沿著該預定分割線而與該第1及第2透明基板一起切斷,以將該第2一體化晶圓分割成各個發光二極體晶片的分割工程。The subject of this invention is to provide the manufacturing method of the light emitting diode wafer which can obtain sufficient brightness, and a light emitting diode wafer. The solution of the present invention is a method of manufacturing a light-emitting diode wafer, which is characterized by preparing a laminate layer having a plurality of semiconductor layers including a light-emitting layer formed on a transparent substrate for crystal growth, and in the laminate layer. The wafer preparation process of the wafer on which the LED circuits are formed in the regions demarcated by a plurality of predetermined dividing lines that intersect each other on the surface, and the back surface of the wafer in which a plurality of recesses or grooves are formed corresponding to each LED circuit on the back side of the wafer. The processing process is the first transparent substrate bonding process of bonding the surface of the first transparent substrate to the back surface of the wafer to form the first integrated wafer. After the first transparent substrate bonding process is performed, the second transparent substrate is bonded. The surface is bonded to the back of the first transparent substrate to form the second transparent substrate bonding process of the second integrated wafer, and the wafer is cut along the predetermined dividing line together with the first and second transparent substrates A division process for dividing the second integrated wafer into individual light-emitting diode wafers.

Description

發光二極體晶片的製造方法及發光二極體晶片Manufacturing method of light-emitting diode chip and light-emitting diode chip

[0001] 本發明係關於發光二極體晶片的製造方法及發光二極體晶片。[0001] The present invention relates to a method for manufacturing a light-emitting diode wafer and a light-emitting diode wafer.

[0002] 於藍寶石基板、GaN基板、SiC基板等之結晶成長用基板的表面形成層積複數n型半導體層、發光層、p型半導體層的層積體層,在該層積體層藉由交叉之複數預定分割線所區劃的區域形成複數LED(Light Emitting Diode)等之發光裝置的晶圓,係沿著預定分割線被切斷而分割成各個發光裝置晶片,被分割的發光裝置晶片被廣泛利用於手機、電腦、照明機器等的各種電氣機器。   [0003] 從發光裝置晶片的發光層所射出的光線具有等向性,故也照射至結晶成長用基板的內部,從基板的背面及側面也射出光線。然而,照射至基板內部的光線中在與空氣層的界面的射入角為臨界角以上的光線,係在界面被全反射而被封閉於基板內部,不會從基板射出至外部,故有導致發光裝置晶片的亮度降低的問題。   [0004] 為了解決該問題,於日本特開2014-175354號公報記載有為了抑制從發光層射出的光線被封閉於基板內部之狀況,於基板的背面黏合透明構件,以謀求亮度的提升的發光二極體(LED)。 [先前技術文獻] [專利文獻]   [0005]   [專利文獻1]日本特開2014-175354號公報A laminate layer in which a plurality of n-type semiconductor layers, light-emitting layers, and p-type semiconductor layers are laminated is formed on the surface of a substrate for crystal growth such as a sapphire substrate, a GaN substrate, and a SiC substrate. Wafers on which a plurality of light-emitting devices such as LEDs (Light Emitting Diodes) are formed are formed in the area divided by the plurality of predetermined dividing lines, and are cut along the predetermined dividing lines to be divided into individual light-emitting device wafers, and the divided light-emitting device wafers are widely used. It is used in various electrical equipment such as mobile phones, computers, lighting equipment, etc. [0003] The light emitted from the light-emitting layer of the light-emitting device wafer is isotropic, so it is also irradiated to the inside of the substrate for crystal growth, and the light is also emitted from the back and side surfaces of the substrate. However, among the light rays irradiated inside the substrate, the incident angle at the interface with the air layer equal to or greater than the critical angle is totally reflected at the interface and enclosed in the substrate, and is not emitted from the substrate to the outside. The problem of lowering the brightness of the light-emitting device wafer. In order to solve this problem, Japanese Patent Application Laid-Open No. 2014-175354 describes that in order to suppress the situation in which the light emitted from the light-emitting layer is trapped inside the substrate, a transparent member is adhered to the back surface of the substrate to achieve light emission with improved brightness. Diodes (LEDs). [Prior Art Document] [Patent Document] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2014-175354

[發明所欲解決之課題]   [0006] 但是,在專利文獻1所揭示的發光二極體中,雖然藉由將透明構件黏合於基板的背面而稍微提升亮度,但是有無法獲得充分之亮度的問題。   [0007] 本發明係有鑑於此點所發明者,其目的係提供可獲得充分亮度之發光二極體晶片的製造方法及發光二極體晶片。 [用以解決課題之手段]   [0008] 依據請求項1所記載的發明,提供一種發光二極體晶片的製造方法,其特徵為具備:晶圓準備工程,係準備具有於結晶成長用的透明基板上形成包含發光層之複數半導體層的層積體層,且於該層積體層的表面藉由相互交叉之複數預定分割線所區劃的各區域,分別形成LED電路的晶圓;晶圓背面加工工程,係於該晶圓的背面,對應各LED電路而形成複數凹部或溝;第1透明基板黏合工程,係將第1透明基板的表面黏合於晶圓的背面,以形成第1一體化晶圓;第2透明基板黏合工程,係在實施該第1透明基板黏合工程之後,將第2透明基板的表面黏合於該第1透明基板的背面,以形成第2一體化晶圓;及分割工程,係將該晶圓沿著該預定分割線而與該第1及第2透明基板一起切斷,以將該第2一體化晶圓分割成各個發光二極體晶片。   [0009] 理想為晶圓背面加工工程中所形成的凹部或溝,係利用切削刀、蝕刻、噴砂、雷射之任一來形成。   [0010] 理想為該第1及第2透明基板,係以透明陶瓷、光學玻璃、藍寶石、透明樹脂之任一形成;該第1及該第2透明基板黏合工程,係使用透明接著劑來實施。   [0011] 依據請求項4所記載的發明,提供一種發光二極體晶片,其特徵為具備:發光二極體,係於表面形成LED電路,於背面形成凹部或溝;第1透明構件,係表面被黏合於該發光二極體的背面;及第2透明構件,係表面被黏合於該第1透明構件的背面。 [發明的效果]   [0012] 本發明的發光二極體晶片,係在表面形成LED電路,在背面形成凹部或溝的發光二極體的背面,黏合第1透明構件的表面,並於該第1透明構件的背面黏合第2透明構件的表面,所以,光線在凹部或溝及第1、第2透明構件內複雜地折射,被封閉在第1及第2透明構件內的光線會減少,從第1及第2透明構件射出之光線的量增加,提升發光二極體晶片的亮度。[Problems to be Solved by the Invention] [0006] However, in the light-emitting diode disclosed in Patent Document 1, although the brightness is slightly improved by adhering a transparent member to the back surface of the substrate, there is a problem that sufficient brightness cannot be obtained. question. [0007] The present invention has been made in view of this point, and an object thereof is to provide a method for producing a light-emitting diode chip and a light-emitting diode chip that can obtain sufficient brightness. [Means for Solving the Problems] [0008] According to the invention described in claim 1, there is provided a method for manufacturing a light-emitting diode wafer, characterized by comprising: a wafer preparation process for preparing a transparent material for crystal growth. A laminate layer including a plurality of semiconductor layers and a light-emitting layer is formed on the substrate, and the surface of the laminate layer is divided by a plurality of predetermined dividing lines that intersect each other to form LED circuit wafers respectively; wafer backside processing The process is to form a plurality of recesses or grooves corresponding to each LED circuit on the back of the wafer; the first transparent substrate bonding process is to bond the surface of the first transparent substrate to the back of the wafer to form a first integrated crystal. circle; the second transparent substrate bonding process, after the first transparent substrate bonding process is performed, the surface of the second transparent substrate is bonded to the back surface of the first transparent substrate to form a second integrated wafer; and the separation process and cutting the wafer together with the first and second transparent substrates along the predetermined dividing line, so as to divide the second integrated wafer into individual light-emitting diode chips. [0009] Ideally, the concave portion or groove formed in the wafer backside processing process is formed by any one of a cutter, etching, sandblasting, and laser. Ideally, the first and second transparent substrates are formed of any one of transparent ceramics, optical glass, sapphire, and transparent resin; the first and second transparent substrate bonding processes are implemented using a transparent adhesive. . According to the invention recorded in claim 4, a kind of light-emitting diode wafer is provided, and it is characterized in that possessing: light-emitting diode, forms LED circuit on the surface, forms recessed part or groove on the back; The 1st transparent member, system The surface is adhered to the back surface of the light-emitting diode; and the second transparent member, the surface is adhered to the back surface of the first transparent member. [Effects of the Invention] [0012] The light-emitting diode chip of the present invention is formed on the back surface of the light-emitting diode with an LED circuit formed on the surface, and a recess or groove is formed on the back surface of the light-emitting diode, the surface of the first transparent member is bonded, and the 1 The back of the transparent member is bonded to the surface of the second transparent member, so the light is refracted complicatedly in the recesses or grooves and the first and second transparent members, and the light enclosed in the first and second transparent members is reduced. The amount of light emitted from the first and second transparent members increases, thereby improving the brightness of the light-emitting diode chip.

以下,參照圖面詳細說明本發明的實施形態。參照圖1,揭示光學裝置晶圓(以下,有僅略稱為晶圓之狀況)11的表面側立體圖。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1 , a front perspective view of an optical device wafer (hereinafter, only abbreviated as wafer) 11 is disclosed.

光學裝置晶圓11係於藍寶石基板13上層積氮化鎵(GaN)等的磊晶層(層積體層)15所構成。光學裝置晶圓11係具有層積了磊晶層15的表面11a,與藍寶石基板13露出的背面11b。 The optical device wafer 11 is formed by laminating an epitaxial layer (laminate layer) 15 of gallium nitride (GaN) or the like on a sapphire substrate 13 . The optical device wafer 11 has a front surface 11 a on which the epitaxial layer 15 is stacked, and a back surface 11 b where the sapphire substrate 13 is exposed.

在此,本實施形態的光學裝置晶圓11中,作為結晶成長用基板,採用藍寶石基板13,但是,採用GaN基板或SiC基板等來代替藍寶石基板13亦可。 Here, in the optical device wafer 11 of the present embodiment, the sapphire substrate 13 is used as the crystal growth substrate, but a GaN substrate, a SiC substrate, or the like may be used instead of the sapphire substrate 13 .

層積體層(磊晶層)15係藉由依序讓電子成為多 數載子的n型半導體層(例如,n型GaN層)、成為發光層的半導體層(例如,InGaN層)、電洞成為多數載子的p型半導體層(例如,p型GaN層)磊晶成長來形成。 The laminated body layer (epitaxy layer) 15 is formed by sequentially allowing electrons to become multiple An n-type semiconductor layer (for example, an n-type GaN layer) for a number of carriers, a semiconductor layer for a light-emitting layer (for example, an InGaN layer), and a p-type semiconductor layer (for example, a p-type GaN layer) for holes to be a majority carrier crystal growth to form.

藍寶石基板13係例如具有100μm的厚度,層積體層15係例如具有5μm的厚度。於層積體層15,複數LED電路19藉由格子狀地形成的複數預定分割線17區劃而形成。晶圓11係具有形成LED電路19的表面11a,與藍寶石基板13露出的背面11b。 The sapphire substrate 13 has a thickness of, for example, 100 μm, and the laminate layer 15 has a thickness of, for example, 5 μm. In the laminated body layer 15, a plurality of LED circuits 19 are partitioned and formed by a plurality of predetermined dividing lines 17 formed in a lattice shape. The wafer 11 has a front surface 11 a on which the LED circuit 19 is formed, and a back surface 11 b where the sapphire substrate 13 is exposed.

依據本發明實施形態的發光二極體晶片的製造方法,首先實施準備如圖1所示之光學裝置晶圓11的晶圓準備工程。進而,實施於晶圓11的背面11b,對應LED電路19而形成複數溝3的晶圓背面加工工程。 According to the manufacturing method of the light-emitting diode wafer according to the embodiment of the present invention, first, a wafer preparation process for preparing the optical device wafer 11 as shown in FIG. 1 is performed. Furthermore, the wafer back surface processing process of forming a plurality of grooves 3 corresponding to the LED circuits 19 is performed on the back surface 11 b of the wafer 11 .

該晶圓背面加工工程,係例如使用公知的切削裝置來實施。如圖2(A)所示,切削裝置的切削單元10係包含主軸殼體12、可旋轉地插入至主軸殼體12中之未圖示的主軸、及安裝於主軸的前端的切削刀14。 This wafer backside processing process is performed using, for example, a known cutting apparatus. As shown in FIG. 2(A) , the cutting unit 10 of the cutting device includes a spindle housing 12, a spindle (not shown) rotatably inserted into the spindle housing 12, and a cutting blade 14 attached to the front end of the spindle.

切削刀14的刀鋒係例如以利用鎳電鍍固定鑽石研磨粒的電鍍砥石所形成,其前端形狀呈三角形狀、四角形狀、或半圓形狀。 The cutting edge of the cutting blade 14 is formed of, for example, a galvanized stone for fixing diamond abrasive grains by nickel electroplating, and the shape of the tip thereof is a triangle shape, a square shape, or a semicircle shape.

切削刀14的概略上半部係被刀套(輪套)16覆蓋,於刀套16配設有向切削刀14的遠側及近側水平地伸長之一對(僅圖示1個)冷卻噴嘴18。 The roughly upper half of the cutting blade 14 is covered by a blade sleeve (wheel sleeve) 16, and a pair (only one shown in the figure) is arranged in the blade sleeve 16 to extend horizontally toward the distal side and the proximal side of the cutting blade 14 for cooling. Nozzle 18.

於晶圓11的背面11b形成複數溝3的形成晶圓背面加工工程中,利用未圖示之切削裝置的吸盤台來吸引保持晶圓11的表面11a。然後,藉由使切削刀14一邊向箭頭R方向高速旋轉一邊向晶圓11的背面11b切入所定深度,並將被未圖示的吸盤台所保持的晶圓11向箭頭X1方向進行加工進送,利用切削來形成伸長於第1方向的溝3。   [0024] 一邊將晶圓11往與箭頭X1方向正交的方向,每次以晶圓11的預定分割線17的間距進行轉向進送,一邊切削晶圓11的背面11b,如圖3(A)所示,接連形成伸長於第1方向的複數溝3。   [0025] 如圖3(A)所示,形成於晶圓11的背面11b的複數溝3作為僅伸長於一方向的形態亦可,或如圖3(B)所示,將伸長於第1方向及與該第1方向正交的第2方向的複數溝3形成於晶圓11的背面11b亦可。   [0026] 形成於晶圓11的背面11b的溝,係作為如圖2(B)所示之剖面三角形狀的溝3,或如圖2(C)所示之剖面四角形狀的溝3A,又或如圖2(D)所示之剖面半圓形狀的溝3B之任一亦可。   [0027] 於晶圓11的背面11b,對應LED電路19而形成複數凹部,來代替於晶圓11的背面11b,藉由切削形成複數溝3、3A、3B的實施形態亦可。在該實施形態中,如圖4(A)所示,使用具有對應晶圓11的LED電路19之複數孔洞4的遮罩2。   [0028] 如圖4(B)所示,將遮罩2的孔洞4對應晶圓11的各LED電路19而黏合於晶圓11的背面11b。然後,藉由濕式蝕刻或電漿蝕刻,於晶圓11的背面11b,如圖4(C)所示,形成對應遮罩2之孔洞4的形狀之三角形狀的凹部5。   [0029] 藉由將遮罩2的孔洞4的形狀變更為四角形狀或圓形狀,於晶圓11的背面11b形成如圖4(D)所示之四角形狀的凹部5A,或如圖4(E)所示,於晶圓11的背面11b形成圓形狀的凹部5B亦可。   [0030] 作為本實施形態的變形例,在將遮罩2黏合於晶圓11的背面11b之後,藉由實施噴砂加工,於晶圓11的背面11b形成如圖4(C)所示之三角形狀的凹部5,或如圖4(D)所示之四角形狀的凹部5A,又或如圖4(E)所示之圓形狀凹部5B亦可。   [0031] 利用雷射加工裝置,於晶圓11的背面11b形成對應LED電路19的複數溝或複數凹部亦可。在雷射加工所致之第1實施形態中,如圖5(A)所示,藉由一邊從聚光器(雷射頭)24朝晶圓11的背面11b照射對於晶圓11具有吸收性之波長(例如266nm)的雷射光束,一邊將保持晶圓11之未圖示的吸盤台往箭頭X1方向進行加工進送,將伸長於第1方向的溝7,藉由剝蝕形成於晶圓11的背面11b。   [0032] 一邊將晶圓11往與箭頭X1方向正交的方向,每次以晶圓11的預定分割線17的間距進行轉向進送,一邊對晶圓11的背面11b進行剝蝕加工,接連形成伸長於第1方向的複數溝7。溝7的剖面形狀係例如作為圖5(B)所示之半圓形狀亦可,作為其他形狀亦可。   [0033] 作為代替實施形態,如圖5(C)所示,從聚光器24間歇地照射對於晶圓11具有吸收性之波長(例如266nm)的脈衝雷射光束,於晶圓11的背面11b形成對應LED電路19的複數凹部9亦可。凹部9的形狀係通常成為對應雷射光束的點形狀之圖5(D)所示的圓形狀。   [0034] 在實施晶圓背面加工工程之後,如圖6(A)所示,實施將第1透明基板21的表面21a黏合於晶圓11的背面11b的第1透明基板黏合工程。圖6(B)係第1一體化晶圓25的立體圖。   [0035] 第1透明基板21係由透明樹脂、光學玻璃、藍寶石、透明陶瓷之任一所形成。在本實施形態中,由相較於光學玻璃更具有耐久性的聚碳酸酯、丙烯酸樹脂等的透明樹脂形成第1及第2透明基板。   [0036] 在實施第1透明基板黏合工程之後,如圖7(A)所示,將第2透明基板21A的表面21a黏合於第1一體化晶圓25的第1透明基板21的背面(第2透明基板黏合工程),形成如圖7(B)所示之第2一體化晶圓25A。第2透明基板21A的材質也與上述之第1透明基板21的材質相同。   [0037] 代替上述之第1透明基板黏合工程及第2透明基板黏合工程,在將該第2透明基板21A的表面黏合於第1透明基板21的背面而一體化之後,將晶圓11的背面11b黏合於第1透明基板21的表面21a亦可。   [0038] 在實施第2透明基板黏合工程之後,如圖8所示,實施將第2一體化晶圓25A的第2透明基板21A,黏合於外周部被黏合於環狀框架F的切割膠帶T而形成框架單元,隔著切割膠帶T而利用環狀框架F支持第2一體化晶圓25A的支持工程。   [0039] 實施支持工程之後,實施將框架單元投入至切削裝置,利用切削裝置切削第2一體化晶圓25A而分割成各個發光二極體晶片的分割工程。針對該分割工程,參照圖9進行說明。   [0040] 該分割工程係例如使用公知的切削裝置來實施。如圖9所示,切削裝置的切削單元10係包含主軸殼體12、可旋轉地插入至主軸殼體12中之未圖示的主軸、及安裝於主軸的前端的切削刀14。   [0041] 切削刀14的刀鋒係例如以利用鎳電鍍固定鑽石研磨粒的電鍍砥石所形成,其前端形狀呈三角形狀、四角形狀、或半圓形狀。   [0042] 切削刀14的概略上半部係被刀套(輪套)16覆蓋,於刀套16配設有向切削刀14的遠側及近側水平地伸長之一對(僅圖示1個)冷卻噴嘴18。   [0043] 在分割工程中,隔著框架單元的切割膠帶T利用切削裝置的吸盤台20吸引保持第2一體化晶圓25A,環狀框架F係利用未圖示的箝夾來箝夾固定。   [0044] 然後,一邊使切削刀14往箭頭R方向高速旋轉一邊切削刀14的前端到達切割膠帶T為止切入至晶圓11的預定分割線17,邊從冷卻噴嘴18朝向切削刀14及晶圓11的加工點供給切削液,邊將第2一體化晶圓25A往箭頭X1方向進行加工進送,藉此,沿著晶圓11的預定分割線17,形成切斷晶圓11及第1及第2透明基板21、21A的切斷溝27。In the process of forming the back surface of the wafer in which the plurality of grooves 3 are formed on the back surface 11 b of the wafer 11 , the front surface 11 a of the wafer 11 is sucked and held by a chuck table of a cutting device (not shown). Then, by rotating the cutting blade 14 at a high speed in the direction of the arrow R while cutting into the back surface 11b of the wafer 11 to a predetermined depth, the wafer 11 held by the chuck table (not shown) is processed and fed in the direction of the arrow X1. The grooves 3 extended in the first direction are formed by cutting. While moving the wafer 11 to the direction orthogonal to the direction of the arrow X1, the back surface 11b of the wafer 11 is cut while the backside 11b of the wafer 11 is cut, as shown in FIG. 3 (A ), a plurality of grooves 3 extending in the first direction are successively formed. As shown in FIG. 3(A), the plurality of grooves 3 formed on the back surface 11b of the wafer 11 may be extended only in one direction, or as shown in FIG. The plural grooves 3 in the direction and the second direction orthogonal to the first direction may be formed on the back surface 11 b of the wafer 11 . The groove formed on the back surface 11b of the wafer 11 is a groove 3 having a triangular cross-section as shown in FIG. 2(B), or a groove 3A having a quadrangular cross-section as shown in FIG. 2(C), Alternatively, any of the grooves 3B having a semicircular cross-section as shown in FIG. 2(D) may be used. [0027] In the back surface 11b of the wafer 11, a plurality of recesses are formed corresponding to the LED circuits 19, instead of the back surface 11b of the wafer 11, the embodiment in which the plurality of grooves 3, 3A, 3B are formed by cutting may be acceptable. In this embodiment, as shown in FIG. 4(A) , a mask 2 having a plurality of holes 4 corresponding to the LED circuits 19 of the wafer 11 is used. [0028] As shown in FIG. 4(B), the holes 4 of the mask 2 are bonded to the back surface 11b of the wafer 11 corresponding to the LED circuits 19 of the wafer 11. Then, by wet etching or plasma etching, as shown in FIG. 4(C) on the back surface 11b of the wafer 11, a triangular-shaped recess 5 corresponding to the shape of the hole 4 of the mask 2 is formed. [0029] By changing the shape of the hole 4 of the mask 2 to a quadrangular shape or a circular shape, a quadrangular-shaped concave portion 5A as shown in FIG. As shown in E), the circular recess 5B may be formed on the back surface 11 b of the wafer 11 . As a modification of this embodiment, after the mask 2 is adhered to the backside 11b of the wafer 11, sandblasting is performed to form a triangle as shown in FIG. 4(C) on the backside 11b of the wafer 11 The concave portion 5 of the shape, the concave portion 5A of the quadrangular shape as shown in FIG. 4(D), or the concave portion 5B of the circular shape as shown in FIG. 4(E) may be used. [0031] Using a laser processing apparatus, a plurality of grooves or a plurality of recesses corresponding to the LED circuits 19 may be formed on the back surface 11b of the wafer 11. In the first embodiment by laser processing, as shown in FIG. 5(A) , by irradiating the back surface 11 b of the wafer 11 from the concentrator (laser head) 24 while irradiating the wafer 11 , the wafer 11 is absorbing A laser beam having a wavelength (for example, 266 nm) is processed and fed in the direction of arrow X1 while the chuck table not shown holding the wafer 11 is processed and fed, and the groove 7 extending in the first direction is formed on the wafer by ablation. 11 on the back side 11b. While moving the wafer 11 in a direction orthogonal to the direction of the arrow X1, the back surface 11b of the wafer 11 is subjected to ablation processing and successively formed by turning and feeding the wafer 11 with a pitch of the predetermined dividing line 17 of the wafer 11. The plural grooves 7 are elongated in the first direction. The cross-sectional shape of the groove 7 may be, for example, a semicircular shape as shown in FIG. 5(B), or may be other shapes. As an alternative embodiment, as shown in FIG. 5(C), a pulsed laser beam having an absorbing wavelength (eg, 266 nm) for the wafer 11 is intermittently irradiated from the concentrator 24 to the back surface of the wafer 11. 11b may form a plurality of recesses 9 corresponding to the LED circuits 19 . The shape of the concave portion 9 is generally a circular shape as shown in FIG. 5(D) corresponding to the spot shape of the laser beam. [0034] After the wafer back surface processing process is performed, as shown in FIG. 6(A), a first transparent substrate bonding process for bonding the front surface 21a of the first transparent substrate 21 to the back surface 11b of the wafer 11 is performed. FIG. 6(B) is a perspective view of the first integrated wafer 25 . [0035] The first transparent substrate 21 is formed of any one of transparent resin, optical glass, sapphire, and transparent ceramics. In the present embodiment, the first and second transparent substrates are formed of transparent resins such as polycarbonate and acrylic resin, which are more durable than optical glass. After the first transparent substrate bonding process is performed, as shown in FIG. 2 transparent substrate bonding process) to form the second integrated wafer 25A as shown in FIG. 7(B). The material of the second transparent substrate 21A is also the same as the material of the first transparent substrate 21 described above. In place of the above-mentioned first transparent substrate bonding process and second transparent substrate bonding process, after the surface of the second transparent substrate 21A is bonded to the back surface of the first transparent substrate 21 and integrated, the back surface of the wafer 11 is integrated. The 11b may be bonded to the surface 21a of the first transparent substrate 21 . After the second transparent substrate bonding process is performed, as shown in FIG. 8, the second transparent substrate 21A of the second integrated wafer 25A is bonded to the dicing tape T whose outer peripheral portion is bonded to the annular frame F. The frame unit is formed, and the annular frame F supports the supporting process of the second integrated wafer 25A through the dicing tape T. [0039] After the support process is carried out, a division process is carried out in which the frame unit is put into the cutting device, and the second integrated wafer 25A is cut by the cutting device to be divided into individual light-emitting diode wafers. This division process will be described with reference to FIG. 9 . [0040] This division process is carried out, for example, using a known cutting device. As shown in FIG. 9 , the cutting unit 10 of the cutting device includes a spindle housing 12 , a spindle (not shown) rotatably inserted into the spindle housing 12 , and a cutting blade 14 attached to the front end of the spindle. [0041] The cutting edge of the cutting blade 14 is formed of, for example, an electroplating stone for fixing diamond abrasive grains by nickel electroplating, and the front end shape thereof is a triangular shape, a square shape, or a semicircular shape. A rough upper half of the cutting blade 14 is covered by a blade cover (wheel cover) 16, and a pair of horizontally extending toward the distal side and the proximal side of the cutting blade 14 is arranged on the blade cover 16 (only shown in Figure 1). 1) cooling nozzles 18. In the dividing process, the second integrated wafer 25A is sucked and held by the chuck table 20 of the cutting device across the dicing tape T of the frame unit, and the ring frame F is clamped and fixed by a clamp not shown. Then, while rotating the cutting blade 14 at a high speed in the direction of the arrow R, the front end of the cutting blade 14 reaches the dicing tape T and cuts into the predetermined dividing line 17 of the wafer 11, and moves from the cooling nozzle 18 to the cutting blade 14 and the wafer. The cutting fluid is supplied to the processing point 11, and the second integrated wafer 25A is processed and fed in the direction of the arrow X1, thereby forming the cut wafer 11 and the first and The cutting grooves 27 of the second transparent substrates 21 and 21A.

一邊將切削單元10往Y軸方向進行轉向進送,一邊沿著伸長於第1方向的預定分割線17,接連形成同樣的切斷溝27。接下來,將吸盤台20旋轉90°後,沿著伸長於與第1方向正交的第2方向之所有預定分割線17,形成同樣的切斷溝27,而成為圖10所示之狀態,藉此,將第2一體化晶圓25A分割成如圖7所示之發光二極體晶片31。 While turning and feeding the cutting unit 10 in the Y-axis direction, the same cutting grooves 27 are successively formed along the predetermined dividing line 17 extending in the first direction. Next, after rotating the chuck table 20 by 90°, the same cutting grooves 27 are formed along all the predetermined dividing lines 17 extending in the second direction orthogonal to the first direction, and the state shown in FIG. 10 is obtained. Thereby, the second integrated wafer 25A is divided into the light emitting diode chips 31 shown in FIG. 7 .

在上述之實施形態中,為了將第2一體化晶圓25A分割成各個發光二極體晶片31,使用切削裝置,但是,將對於晶圓11及透明基板21、21A具有透射性之波長的雷射光束,沿著預定分割線17照射至晶圓11,於晶圓11及第1透明基板21及第2透明基板21A的內部,於厚度方向形成複數層的改質層,接下來,對第2一體化晶圓25A賦予外力,以改質層為分割起點,將第2一體化晶圓25A分割成各個發光二極體晶片31亦可。 In the above-described embodiment, a cutting device is used to divide the second integrated wafer 25A into the respective light-emitting diode wafers 31. However, lasers having wavelengths that are transmissive to the wafer 11 and the transparent substrates 21 and 21A are used. The beam is irradiated to the wafer 11 along the predetermined dividing line 17 to form a plurality of modified layers in the thickness direction in the wafer 11 and the inside of the first transparent substrate 21 and the second transparent substrate 21A. 2. The second integrated wafer 25A may be divided into the respective light-emitting diode chips 31 by applying an external force to the second integrated wafer 25A with the modified layer as the starting point of division.

圖11所示之發光二極體晶片31係於表面具有LED電路19,於背面形成凹部之LED13A的背面,黏合第1透明構件21'。進而,於第1透明構件21'的背面,黏合第2透明構件21A'The light emitting diode chip 31 shown in FIG. 11 has the LED circuit 19 on the front surface, and the back surface of the LED 13A having the recess formed on the back surface is bonded to the first transparent member 21 . Furthermore, the second transparent member 21A ' is bonded to the back surface of the first transparent member 21' .

所以,在圖11所示之發光二極體晶片31中,除了第1及第2透明構件21'、21A'的表面積增大之外,光線在凹部5及第1、第2透明構件21'、21A'內複雜地折射,被封閉於透明構件內的光線會減少,從透明構件21'、21A'射出之光線的量增大,提升發光二極體晶片31的亮度。 Therefore, in the light-emitting diode wafer 31 shown in FIG. 11, in addition to the increase in the surface areas of the first and second transparent members 21 ' , 21A ' , the light rays penetrate the recesses 5 and the first and second transparent members 21 '. 21A ' is complicatedly refracted, the light enclosed in the transparent member will be reduced, the amount of light emitted from the transparent members 21 ' , 21A ' will increase, and the brightness of the light-emitting diode chip 31 will be improved.

2:遮罩 2: Mask

3:溝 3: Ditch

3A:溝 3A: Groove

3B:溝 3B: Groove

4:孔洞 4: Holes

5:凹部 5: Recess

5A:凹部 5A: Recess

5B:凹部 5B: Recess

7:溝 7: Ditch

9:凹部 9: Recess

10:切削單元 10: Cutting unit

11:光學裝置晶圓(晶圓) 11: Optical device wafer (wafer)

11a:表面 11a: Surface

11b:背面 11b: Back

13:藍寶石基板 13: Sapphire substrate

14:切削刀 14: Cutter

15:層積體層 15: Laminate layers

16:刀套 16: Knife Set

17:預定分割線 17: Scheduled dividing line

19:LED電路 19: LED circuit

21:第1透明基板 21: The first transparent substrate

21´‧‧‧第1透明構件21a‧‧‧表面21b‧‧‧背面21A‧‧‧第2透明基板21A´‧‧‧第2透明構件25‧‧‧第1一體化晶圓25A‧‧‧第2一體化晶圓27‧‧‧切斷溝31‧‧‧發光二極體晶片T‧‧‧切割膠帶21´‧‧‧First transparent member 21a‧‧‧Front surface 21b‧‧‧Back surface 21A‧‧‧Second transparent substrate 21A´‧‧‧Second transparent member 25‧‧‧First integrated wafer 25A‧‧‧ 2nd integrated wafer 27‧‧‧cutting groove 31‧‧‧LED chip T‧‧‧dicing tape

[0013]   [圖1] 光學裝置晶圓的表面側立體圖。   [圖2] 圖2(A)係揭示切削刀所致之晶圓的背面加工工程的立體圖,圖2(B)~圖2(D)係揭示所形成之溝形狀的剖面圖。   [圖3] 圖3(A)係具有晶圓的背面所形成之伸長於第1方向之複數溝的晶圓的背面側立體圖,圖3(B)係形成晶圓的背面所形成之伸長於第1方向及與第1方向正交的第2方向之複數溝的晶圓的背面側立體圖。   [圖4] 圖4(A)係揭示將遮罩黏合於晶圓的背面之樣子的立體圖,圖4(B)係揭示具有複數孔洞的遮罩被黏合於晶圓的背面之狀態的立體圖,圖4(C)~圖4(E)係揭示晶圓的背面所形成之凹部的形狀之晶圓的部分立體圖。   [圖5] 圖5(A)係揭示藉由雷射光束在晶圓的背面形成溝之樣子的立體圖,圖5(B)係揭示溝形狀之晶圓的部分剖面圖,圖5(C)係揭示藉由雷射光束在晶圓的背面形成圓形凹部之樣子的立體圖,圖5(D)係揭示所形成之圓形的凹部之晶圓的部分立體圖。   [圖6] 圖6(A)係揭示將第1透明基板的表面黏合於晶圓的背面而一體化的第1透明基板黏合工程的立體圖,圖6(B)係第1一體化晶圓的立體圖。 [0013] [FIG. 1] A front side perspective view of an optical device wafer. [Fig. 2] Fig. 2(A) is a perspective view showing the backside processing process of the wafer by a cutting blade, and Figs. 2(B) to 2(D) are cross-sectional views showing the shape of the groove formed. [FIG. 3] FIG. 3(A) is a rear perspective view of a wafer having plural grooves formed on the back surface of the wafer and extending in the first direction, and FIG. 3(B) is a back surface of the wafer formed to extend in A perspective view of the back side of the wafer with plural grooves in the first direction and the second direction orthogonal to the first direction. [FIG. 4] FIG. 4(A) is a perspective view showing a state in which a mask is adhered to the backside of a wafer, and FIG. 4(B) is a perspective view showing a state in which a mask having a plurality of holes is adhered to the backside of the wafer, FIGS. 4(C) to 4(E) are partial perspective views of the wafer showing the shape of the concave portion formed on the back surface of the wafer. [Fig. 5] Fig. 5(A) is a perspective view showing how grooves are formed on the backside of the wafer by a laser beam, Fig. 5(B) is a partial cross-sectional view showing the groove shape of the wafer, and Fig. 5(C) It is a perspective view showing how a circular recess is formed on the back surface of the wafer by a laser beam, and FIG. 5(D) is a partial perspective view of the wafer showing the formed circular recess. [ Fig. 6] Fig. 6(A) is a perspective view showing a first transparent substrate bonding process in which the front surface of the first transparent substrate is bonded to the back surface of the wafer for integration, and Fig. 6(B) is a view of the first integrated wafer Stereogram.

[圖7]圖7(A)係揭示將第2透明基板的表面黏合於第1一體化晶圓的第1透明基板的背面而一體化的第2透明基板黏合工程的立體圖,圖7(B)係第2一體化晶圓的立體圖。 [ Fig. 7] Fig. 7(A) is a perspective view showing a second transparent substrate bonding process in which the front surface of the second transparent substrate is bonded to the back surface of the first transparent substrate of the first integrated wafer and integrated, and Fig. 7(B) ) is a perspective view of the second integrated wafer.

[圖8]揭示隔著切割膠帶利用環狀框架支持第2一體化晶圓的支持工程的立體圖。 [ Fig. 8] Fig. 8 is a perspective view showing a supporting process for supporting the second integrated wafer by a ring frame with a dicing tape interposed therebetween.

[圖9]揭示將第2一體化晶圓分割成發光二極體晶片的分割工程的立體圖。 [ Fig. 9] Fig. 9 is a perspective view showing a division process of dividing the second integrated wafer into light-emitting diode wafers.

[圖10]分割工程結束後之第2一體化晶圓的立體圖。 [ Fig. 10 ] A perspective view of the second integrated wafer after the division process is completed.

[圖11]本發明實施形態相關的發光二極體晶片的立體圖。11 is a perspective view of a light-emitting diode wafer according to an embodiment of the present invention.

11‧‧‧光學裝置晶圓(晶圓) 11‧‧‧Optical device wafer (wafer)

11a‧‧‧表面 11a‧‧‧Surface

21‧‧‧第1透明基板 21‧‧‧First transparent substrate

21A‧‧‧第2透明基板 21A‧‧‧Second transparent substrate

21a‧‧‧表面 21a‧‧‧Surface

25A‧‧‧第2一體化晶圓 25A‧‧‧Second integrated wafer

Claims (4)

一種發光二極體晶片的製造方法,其特徵為具備:晶圓準備工程,係準備具有於結晶成長用的透明基板的表面上形成包含發光層之複數半導體層的層積體層,且於該層積體層的表面藉由相互交叉之複數預定分割線所區劃的各區域,分別形成LED電路的晶圓;晶圓背面加工工程,係於該結晶成長用的透明基板的背面,對應各LED電路而形成複數凹部或溝,並且該複數凹部或溝,係相互隔開預定分割線的間距,形成於該結晶成長用的透明基板的背面上;第1透明基板黏合工程,係將第1透明基板的表面黏合於結晶成長用的透明基板的背面,以形成第1一體化晶圓;第2透明基板黏合工程,係在實施該第1透明基板黏合工程之後,將第2透明基板的表面黏合於該第1透明基板的背面,以形成第2一體化晶圓;及分割工程,係將該晶圓沿著該預定分割線而與該第1及第2透明基板一起切斷,以將該第2一體化晶圓分割成各個發光二極體晶片;於藉由該分割工程所得之該發光二極體中,該結晶成長用基板與第1及第2透明基板的側面成為共面。 A method of manufacturing a light-emitting diode wafer, comprising: a wafer preparation process for preparing a laminate layer having a plurality of semiconductor layers including a light-emitting layer formed on a surface of a transparent substrate for crystal growth, and the layer is The surface of the built-up layer is divided into regions by a plurality of predetermined dividing lines that intersect each other, respectively forming wafers of LED circuits; the backside processing process of the wafers is related to the backside of the transparent substrate for crystal growth, corresponding to each LED circuit. A plurality of concave portions or grooves are formed, and the plurality of concave portions or grooves are separated from each other by a distance of a predetermined dividing line, and are formed on the back surface of the transparent substrate for crystal growth; the first transparent substrate bonding process is the first transparent substrate. The surface is bonded to the back of the transparent substrate for crystal growth to form a first integrated wafer; the second transparent substrate bonding process is to bond the surface of the second transparent substrate to the first transparent substrate bonding process after the first transparent substrate bonding process. The back surface of the first transparent substrate is formed to form a second integrated wafer; and the dividing process is to cut the wafer along the predetermined dividing line together with the first and second transparent substrates to form the second integrated wafer. The integrated wafer is divided into individual light-emitting diode chips; in the light-emitting diode obtained by the dividing process, the crystal growth substrate and the side surfaces of the first and second transparent substrates are coplanar. 如申請專利範圍第1項所記載之發光二極體晶片的製 造方法,其中,代替該第1透明基板黏合工程及該第2透明基板黏合工程,在將該第2透明基板的表面黏合於該第1透明基板的背面而一體化之後,將晶圓的背面黏合於該第1透明基板的表面。 Manufacturing of light-emitting diode chips as described in item 1 of the scope of the patent application A manufacturing method, wherein, instead of the first transparent substrate bonding process and the second transparent substrate bonding process, after the surface of the second transparent substrate is bonded to the back surface of the first transparent substrate for integration, the back surface of the wafer is adhered to the surface of the first transparent substrate. 如申請專利範圍第1項所記載之發光二極體晶片的製造方法,其中,該第1及第2透明基板,係以透明陶瓷、光學玻璃、藍寶石、透明樹脂之任一形成;該第1及該第2透明基板黏合工程,係使用透明接著劑來實施。 The method for manufacturing a light-emitting diode wafer as described in item 1 of the scope of the application, wherein the first and second transparent substrates are formed of any one of transparent ceramics, optical glass, sapphire, and transparent resin; the first and second transparent substrates are formed of And this 2nd transparent substrate bonding process is implemented using a transparent adhesive agent. 一種發光二極體晶片,其特徵為具備:發光二極體,係於透明基板的表面形成LED電路,於該透明基板的背面形成凹部或溝;第1透明構件,係表面被黏合於該透明基板的背面;及第2透明構件,係表面被黏合於該第1透明構件的背面;該透明基板,與第1透明構件及第2透明構件的側面成為共面。 A light-emitting diode wafer is characterized by comprising: a light-emitting diode, an LED circuit is formed on the surface of a transparent substrate, a recess or a groove is formed on the backside of the transparent substrate; a first transparent member, the surface of which is adhered to the transparent substrate The back surface of the substrate; and the second transparent member, the surface is bonded to the back surface of the first transparent member; the transparent substrate is coplanar with the side surfaces of the first transparent member and the second transparent member.
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