TWI769989B - 抗腐蝕光學裝置及製成抗腐蝕光學裝置的方法 - Google Patents

抗腐蝕光學裝置及製成抗腐蝕光學裝置的方法 Download PDF

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TWI769989B
TWI769989B TW105133592A TW105133592A TWI769989B TW I769989 B TWI769989 B TW I769989B TW 105133592 A TW105133592 A TW 105133592A TW 105133592 A TW105133592 A TW 105133592A TW I769989 B TWI769989 B TW I769989B
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layer
corrosion
optical device
silver
resistant optical
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傑森Ｉ 里徳利
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美商麥提利恩公司
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Abstract

本發明是一種抗腐蝕光學裝置及製成抗腐蝕光學裝置的方法。此裝置包含一個基板、在該基板上之一個銀層、及一個提供抗磨的隔離層。此裝置浸泡於富硫醇溶液內。硫醇在任一暴露之銀表面上形成腐蝕抑制單分子層。這樣增加該光學裝置對環境之耐性，防止水與該銀層相互作用。

Description

抗腐蝕光學裝置及製成抗腐蝕光學裝置的方法
本發明關於加上腐蝕抑制單分子層以便保護裝置之銀表面的光學裝置。並且也關於發明生產此種裝置的方法。
光學塗層是沉積在光學部件，如透鏡或鏡子上面，改變該光學部件反射或傳輸光之路徑。因此，光學塗層的光學應用範圍很大，如天文學、靜像與視頻攝影及其他成像裝置、電視、電腦螢幕、行動電話螢幕及其他顯示裝置；光學感應器，如移動傳感器、姿勢傳感器，等等。塗層可以依據應用而有不同厚度與設計。
銀已經被證明在可見光有極佳的反射特性，特別是與金相比時。但是，由於銀對環境之耐性不佳，而且又軟，高精準之成像應用通常避免用銀。例如，科學界對潮濕空氣內之含硫氣體將銀硫化已經多有論述。
金屬薄膜上常覆蓋電介質層當作保護層來增加抗磨性，或加強金屬薄膜之反射性。金屬和電介質組合也用於製造對波長，角度和極化敏感的高級塗層。光學裝置的總反射率和透射能力可以基於組成、厚度和層數來調整。然而，這些保護層的缺陷位置，例如穿孔，可能成為可侵蝕銀之硫化合物的入口點。本發明旨在開發出減 少經由缺陷和/或電介質層穿孔產生的硫化和其它不利影響的塗層，並提供將此塗層施加到光學裝置的方法。
本發明關於具有腐蝕抑制單分子層的光學裝置。特別是源自優先吸附到銀之疏水性硫醇的單分子層。並且包括將單分子層施加到基板表面的方法。
在這方面，本文的各種實施例發表抗腐蝕光學裝置，包括：基板與隔離層；位於該基板和該隔離層之間的銀層；及覆蓋銀層的任一暴露表面的至少一部分的腐蝕抑制單分子層。
腐蝕抑制單分子層可以由至少一種疏水性硫醇形成。在特定之實施例內，疏水性硫醇的分子式為R-SH，其中R是含有約1到約24個碳原子的烷基。
光學裝置可尚包含在該隔離層和銀層之間的結合層。光學裝置尚包含在銀層和基底層之間的合金層。合金層可以與該基底直接接觸。該合金層可以用鎳鉻合金構成。
在有些實施例內，腐蝕抑制單分子層直接施加於該隔離層上。該隔離層可能浸泡富硫醇溶液約4小時到約36小時長。在特定實施列內，該腐蝕抑制單分子層是用包含烷硫醇和醇溶劑的溶液製成。
這裡並且發明製成抗腐蝕光學裝置的方法，包含在該基底上形成一銀層、在該銀層上形成一隔離層以便得到多層之基底、及將 該多層之基底浸泡於富硫醇溶液以便形成至少覆蓋該銀層之任一暴露表面的至少一部分的腐蝕抑制單分子層。
下面特別發表本發明之這些和其他不具限制性的特色。
100:傳統光學裝置之剖視圖
101:隔離層
102:結合層
103:銀層
104:合金層
105:基板
106:標號
107:穿孔缺陷
200:光學裝置之剖視圖
201:隔離層
202:結合層
203:銀層
204:合金層
205:基板
206:單分子層
207:穿孔缺陷
下面是對附圖的簡單說明，目的是展示本發明之實施例子，並不對本發明構成限制。
圖1是具有一隔離層、一銀層、和一個穿孔缺陷之光學例子的剖視圖。
圖2是具有一隔離層、一銀層、一個穿孔缺陷、及施加疏水性硫醇單分子層的光學例子的剖視圖。
參考附圖可以更完整了解本發明之組件、方法程序及裝置。這些附圖只是為了方便極容易展示本發明的示意圖，因此不是用來表示其裝置或組件之相關尺寸及大小及/或定義或限制實施列之範圍。
雖然下面的說明使用特定名詞以求明晰，但是這些名詞只是為指名到圖內示例所選用之實施例的特定結構使用，並不是要定義或限制本發明之範圍。在附圖和下面的說明中，請了解相同的標號指到類似功能的組件。
單數形式「一」，「一個」和「該」包括複數指示物，除非上下文另有明確規定。
如在說明和請求專利部分中所使用的術語，「包含」可以包括「由...組成」和「基本上由...組成」的實施例。此處所用之術語「包含」、「包括」、「具有」、「有」、「可以」、「含有」及其變體旨在是需要該組件/步驟存在的開放式過渡短語、術語或詞語，並且可以容許其他組件/步驟存在。這種描述也應當被解釋為將組件或方法描述為「由所列舉的組件/步驟組成」和「基本上由其組成」，只允許所述組件/步驟和可能由此產生的任何雜項，以及排除其他組件/步驟。
本申請的說明和請求專利部分的數值應當理解為包括減少到有效數位之相同數值，和差異小於本申請所描述之類型的傳統測量技術的實驗誤差的數值。
此處所發表的所有範圍包括所述的端點並且可獨立地組合(例如，「2公克至10公克」的範圍包括端點2公克和10公克，及所有中間值)。
用「約」及「基本上」之類的詞彙修飾之值不能限制所指定之確定值。修飾詞「約」也應被看為表示兩端點之絕對值所定義的範圍。例如，「從約2到約4」的表示也代表「從2到4」的範圍。「約」一詞可以表示所是數值之正負10%。例如，「約10%」可以代表9%到11%，「約1」可以表示從0.9到1.1。
本發明可能涉及某些處理步驟之溫度。請注意這些通常指設定熱源(例如爐、烤箱)的溫度，不一定指暴露於熱源下之材料所達到的溫度。
說明及請求專利部分所用之「金屬」一詞系指相當純度之元素金屬(即含單一金屬元素與雜質)，或二或以上元素之合金。
本說明將以第一層係形成於第二層之上來表示。「上」或「之上」一詞指第二層在底部或支持其上面的第一層。第一層可以在第二層「之上」，即使並非直接彼此接觸，例如，有一個第三層在第一與第二層之間。
本發明是有關保護也用電介質包覆保護之銀被覆/薄膜/層的方法。即使採用保護包覆層，穿孔之類的缺陷處仍可能成為硫化合物的入侵點。銀被覆之光學裝置可以浸泡在富硫醇溶液內。硫醇優先吸附僅在缺陷點暴露之銀。硫醇的疏水尾部排除水與銀層相互作用。
圖1是傳統光學裝置100的剖視圖。在最一般水準，該裝置有基板105，在上面形成一個銀層103。然後在該銀層103上形成一個隔離層101。如此圖所示，隔離層101可以直接施加在結合層102上以便完全與結合層做實體接觸，以便提供對外在環境之不滲透層。結合層102也與該銀層103完全實體接觸而該銀層103又與該合金被覆104完全實體接觸。該合金被覆直接施加於該基底105上以便與該基底105完全實體接觸。此處展示一個穿透隔離層101、結合層102、銀層103、及合金層104而將基層104之上表面暴露的穿孔缺陷107。穿孔缺陷107之內的銀層103暴露部分/表面用箭頭與標號106標示。應該提醒的是穿孔缺陷不需穿透光學裝置100的所有層；穿孔只要穿透隔離層101和結合層102就足以暴露銀層103。
圖2是一個光學裝置例200的剖視圖。與圖1所示之裝置相同，圖2所示之隔離層201直接疊在一個結合層202上。該結合層202直接疊在一個銀層203上而後者又直接疊在一個合金被覆或層204上。合金層204直接疊在基板205上。穿孔缺陷207也暴露部分之銀層203。但是，在本圖內有施加了疏水性硫醇單分子層206。硫醇的親水端基吸附於暴露的銀上面，硫醇的親水端基並且伸入穿孔缺陷207內。，硫醇的親水端基有效降低暴露之銀與水及其他水溶液的相互作用，並且作為抗腐蝕之單分子層。請注意，硫醇單分子層/抗腐蝕單分子層理想地覆蓋銀層的所有暴露表面，但是僅考慮施加單分子層覆蓋銀層的任何特定暴露表面，或者僅覆蓋銀層的一些暴露表面。
單分子層206內至少有一種疏水性硫醇存在。疏水性硫醇通常是R-SH分子式，其中R是含有約1個碳原子到24個碳原子的烷基。在特定之實施例內，形成單分子層所用之硫醇是1-十八烷硫醇，附著銀的特性特別好。硫醇混合醇溶劑，如乙醇而形成富硫醇溶液。然後將該光學裝置浸泡於乙醇之富硫醇溶液內約4小時到36小時，包含約24小時時段。
隔離層101/201可以是當作銀被覆或層之隔離/保護層的電介質被覆。電介質層通常可以是無機材料薄膜、有機聚合物薄膜或有機-無機複合薄膜。適合做電介質層的無機材料例子包含氧化矽、氮化矽、氧化鋁、鈦酸鋇、鈦酸鋇鋯等。適合之有機聚合物包含聚酯、聚碳酸酯、聚(乙烯基苯酚)、聚酰亞胺、聚苯乙烯、聚甲基 丙烯酸酯、聚丙烯酸酯、環氧樹脂等。電介質層之厚度依據所用材料之介值常數而定，例如，從約10奈米到約500奈米。電介質層的導電性可以是，例如，小於約10-12西門子/厘米(S/cm)。電介質層使用業界之傳統處理程序形成。
合金層104/204可以是金屬層。在特定之實施例內，該合金是鎳鉻合金。在其他實施例內，該合金可以是鎳、鉻、鐵、鋁、鋼、鋅或已知並運用在產業內之任一者。
成像元件的基板105/205可以是不透明的或基本上透明的，並且可包含任何具有所需機械性質的合適材料。例如，基板可以包含一層不導電、半導體、或導體材料，如無機或有機化合物。可以使用各種樹脂作為非導電材料，包括聚酰亞胺、聚酯、聚碳酸酯、聚酰胺、聚氨酯等，這些作為薄網時具有柔軟性。
前面已經參考實施例子說明了本發明。很明顯的，在閱讀及了解前面詳細說明後，可以做一些修改及變化。我們旨在將本發明解釋為包含所有此類之修改及變化，因為這些都包含在請求專利的範圍內。
201:隔離層
202:結合層
203:銀層
204:合金層
205:基板
206:單分子層
207:穿孔缺陷

Claims (11)

  1. 一種抗腐蝕光學裝置，包含：一個基板；一個隔離層；一個位於該基板與該隔離層之間的銀層，其中一穿孔缺陷穿透該隔離層以暴露該銀層的部分表面；一個至少包覆該銀層的暴露的該部分表面的腐蝕抑制單分子層，其中該腐蝕抑制單分子層是由分子式為R-SH的一疏水性硫醇所形成，R是含有從1個碳原子到24個碳原子的烷基；及其中該腐蝕抑制單分子層是藉將該隔離層浸泡在富硫醇溶液而施加於該隔離層上。
  2. 如請求項1之抗腐蝕光學裝置，尚包含在該隔離層與該銀層之間的結合層。
  3. 如請求項1之抗腐蝕光學裝置，尚包含在該銀層與該基板之間的合金層。
  4. 如請求項3之抗腐蝕光學裝置，其中該合金層與該基板直接接觸。
  5. 如請求項3之抗腐蝕光學裝置，其中該合金層是用鎳鉻合金構成。
  6. 如請求項1之抗腐蝕光學裝置，其中該隔離層浸泡時間為4小時到36小時。
  7. 如請求項1之抗腐蝕光學裝置，其中該腐蝕抑制單分子層是用包含烷硫醇和醇溶劑的溶液製成。
  8. 如請求項1之抗腐蝕光學裝置，其中該腐蝕抑制單分子層覆蓋該銀層之所有暴露表面。
  9. 一種製作如請求項1之抗腐蝕光學裝置的方法，包含：在該基板上形成一個銀層；在該銀層上形成一個隔離層以便得到多層之基板，其中一穿孔缺陷穿透該隔離層以暴露該銀層的部分表面；及將多層基板浸泡於富 硫醇溶液內而形成至少覆蓋該銀層的暴露的該部分表面的腐蝕抑制單分子層，其中該腐蝕抑制單分子層是由分子式為R-SH的一疏水性硫醇所形成，R是含有從1個碳原子到24個碳原子的烷基。
  10. 如請求項9之方法，其中該多層基板浸泡4小時到36小時。
  11. 如請求項9之方法，其中該富硫醇溶液包含烷硫醇和醇溶劑。
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