TWI766646B - Method for quick positioning chips - Google Patents
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本發明是有關一種晶粒定位方法,特別是一種透過負壓小範圍固定及移動主要目標區塊以使目標晶粒至定點的晶粒高速定位方法。The present invention relates to a die positioning method, in particular to a high-speed die positioning method for fixing and moving a main target block in a small range through negative pressure to make the target die to a fixed point.
積體電路藉由大批方式,經過多道程序,製作在半導體晶圓上,晶圓進一步分割成複數晶粒。換言之,晶粒是以半導體材料製作而成未經封裝的一小塊積體電路本體。分割好的複數晶粒整齊貼附在一承載膜上,接著一承載框負責運送承載膜至一基板的上方,然後藉由至少一頂推件將承載膜的主要目標區塊內的至少一目標晶粒轉移至基板的至少一晶粒放置區,俾利進行後續加工程序。Integrated circuits are fabricated on a semiconductor wafer in a large number of ways and through multiple procedures, and the wafer is further divided into a plurality of dies. In other words, a die is a small piece of an integrated circuit body made of semiconductor material that is not packaged. The divided plural dies are neatly attached to a carrier film, and then a carrier frame is responsible for transporting the carrier film to the top of a substrate, and then at least one target in the main target area of the carrier film is pushed by at least one pusher The die is transferred to at least one die placement area of the substrate to facilitate subsequent processing procedures.
在晶粒轉移的過程中,因為頂推件的水平位置是固定的,所以必須移動整塊承載膜,令目標晶粒的一軸線與晶粒放置區的一軸線對齊,然後頂推件透過承載膜推動目標晶粒往靠近基板的方向移動,直至目標晶粒轉移至晶粒放置區為止。In the process of die transfer, since the horizontal position of the ejector is fixed, the entire carrier film must be moved so that an axis of the target die is aligned with an axis of the die placement area, and then the ejector passes through the carrier. The film pushes the target die to move toward the substrate until the target die is transferred to the die placement area.
然而,習知技術具有以下數種問題:其一,移動整塊承載膜所需移動的質量相當大,移動速度十分緩慢;其二,目標晶粒的軸線難以與晶粒放置區的軸線對齊而有些許偏差,導致目標晶粒難以完全位於晶粒放置區中,進而影響到後續加工程序;其三,一旦有些晶粒排列參差不齊,上述兩種問題會變得更嚴重。However, the prior art has the following problems: firstly, the mass required to move the entire carrier film is quite large, and the moving speed is very slow; secondly, the axis of the target die is difficult to align with the axis of the die placement area. There is a slight deviation, which makes it difficult for the target die to be completely located in the die placement area, thereby affecting the subsequent processing procedures; third, once some of the grains are unevenly arranged, the above two problems will become more serious.
本發明的主要目的在於提供一種晶粒高速定位方法,能夠先透過負壓小範圍固定主要目標區塊的周圍,再透過負壓移動主要目標區塊,使得目標晶粒的軸線能夠精準地對齊晶粒放置區的軸線,無須移動整塊承載膜,大幅減少補償位置時承載膜所需移動的質量,移動速度快。The main purpose of the present invention is to provide a high-speed positioning method for die, which can first fix the periphery of the main target block in a small range through negative pressure, and then move the main target block through negative pressure, so that the axis of the target die can be accurately aligned with the crystal. The axis of the particle placement area does not need to move the entire carrier film, which greatly reduces the mass of the carrier film to move when compensating the position, and the moving speed is fast.
為了達成前述的目的,本發明提供一種晶粒高速定位方法,包括下列步驟:In order to achieve the aforementioned purpose, the present invention provides a method for high-speed positioning of die, comprising the following steps:
準備步驟,一承載膜的一第一表面朝向一吸附裝置及至少一頂推件,承載膜的一第二表面朝向一基板並且具有複數晶粒,承載膜依據該等晶粒的數量區隔成複數區塊,其中一個區塊界定為一主要目標區塊,其餘區塊界定為複數其他目標區塊,主要目標區塊內的複數晶粒的至少一者界定為至少一目標晶粒,基板具有至少一晶粒放置區,吸附裝置對準主要目標區塊的周圍,至少一目標晶粒的一軸線與至少一晶粒放置區的一軸線錯開。In the preparation step, a first surface of a carrier film faces an adsorption device and at least one pusher, a second surface of the carrier film faces a substrate and has a plurality of crystal grains, and the carrier film is divided according to the number of the crystal grains. a plurality of blocks, wherein one block is defined as a main target block, the other blocks are defined as a plurality of other target blocks, at least one of the plurality of dies in the main target block is defined as at least one target die, the substrate has In at least one die placement area, the adsorption device is aligned around the main target block, and an axis of the at least one target die is offset from an axis of the at least one die placement area.
固定步驟,吸附裝置移動至主要目標區塊的周圍並且藉由一負壓吸附主要目標區塊的周圍,至少一頂推件移動至主要目標區塊。In the fixing step, the adsorption device moves to the periphery of the main target block and absorbs the periphery of the main target block by a negative pressure, and at least one pusher moves to the main target block.
位置調整步驟,吸附裝置藉由負壓移動主要目標區塊,直至至少一目標晶粒的軸線與至少一晶粒放置區的軸線對齊為止,吸附裝置停止移動。In the position adjustment step, the adsorption device moves the main target block by negative pressure until the axis of the at least one target die is aligned with the axis of the at least one die placement area, and the adsorption device stops moving.
轉移步驟,至少一頂推件透過承載膜推動至少一目標晶粒往靠近基板的方向移動,直至至少一目標晶粒轉移至至少一晶粒放置區為止。In the transferring step, the at least one pusher pushes the at least one target die to move toward the substrate through the carrier film until the at least one target die is transferred to the at least one die placement area.
在一些實施例中,在準備步驟中,承載膜的第一表面朝向一頂推件,主要目標區塊內的複數晶粒的其中之一界定為一目標晶粒,基板具有一晶粒放置區,目標晶粒的軸線與晶粒放置區的軸線錯開;其中,在固定步驟中,頂推件移動至主要目標區塊;其中,在位置調整步驟中,吸附裝置藉由負壓移動主要目標區塊,直至目標晶粒的軸線與晶粒放置區的軸線對齊為止;以及其中,在轉移步驟中,頂推件透過承載膜推動目標晶粒往靠近基板的方向移動,直至目標晶粒轉移至晶粒放置區為止。In some embodiments, in the preparation step, the first surface of the carrier film faces a pusher, one of the plurality of dies in the main target area is defined as a target die, and the substrate has a die placement area , the axis of the target die is staggered from the axis of the die placement area; wherein, in the fixing step, the pusher moves to the main target area; wherein, in the position adjustment step, the adsorption device moves the main target area by negative pressure block until the axis of the target die is aligned with the axis of the die placement area; and wherein, in the transfer step, the pusher pushes the target die through the carrier film to move in a direction close to the substrate, until the target die is transferred to the die up to the particle placement area.
較佳地,在準備步驟中,主要目標區塊內的複數晶粒排列整齊或參差不齊。Preferably, in the preparation step, the plurality of crystal grains in the main target block are arranged neatly or unevenly.
在一些實施例中,在準備步驟中,承載膜的第一表面朝向複數頂推件,主要目標區塊內的複數晶粒排列整齊,主要目標區塊內的複數晶粒界定為複數目標晶粒,基板具有複數晶粒放置區,該等目標晶粒的該等軸線分別與該等晶粒放置區的該等軸線錯開;其中,在固定步驟中,該等頂推件移動至主要目標區塊;以及其中,在位置調整步驟中,吸附裝置藉由負壓移動主要目標區塊,直至該等目標晶粒的該等軸線分別與該等晶粒放置區的該等軸線對齊為止。In some embodiments, in the preparation step, the first surface of the carrier film faces the plurality of pushers, the plurality of dies in the main target area are arranged in order, and the plurality of dies in the main target area are defined as the plurality of target dies , the substrate has a plurality of die placement areas, the axes of the target die are respectively staggered from the axes of the die placement areas; wherein, in the fixing step, the push pieces move to the main target block ; and wherein, in the position adjustment step, the adsorption device moves the main target block by negative pressure until the axes of the target die are aligned with the axes of the die placement areas respectively.
較佳地,在轉移步驟中,該等頂推件分別透過承載膜推動該等目標晶粒往靠近基板的方向移動,直至該等目標晶粒依序或一起轉移至該等晶粒放置區為止。Preferably, in the transfer step, the push elements push the target die to move toward the substrate through the carrier film, respectively, until the target die is transferred to the die placement area sequentially or together .
在一些實施例中,在準備步驟中,承載膜的第一表面朝向複數頂推件,主要目標區塊內的複數晶粒排列參差不齊,主要目標區塊內的複數晶粒界定為複數目標晶粒,基板具有複數晶粒放置區,該等目標晶粒的該等軸線分別與該等晶粒放置區的該等軸線錯開;其中,在固定步驟中,該等頂推件移動至主要目標區塊;其中,在位置調整步驟中,吸附裝置藉由負壓移動主要目標區塊,直至該等目標晶粒的其中之一的軸線與該等晶粒放置區的其中之一的軸線對齊為止;其中,在轉移步驟中,該等頂推件的其中之一透過承載膜推動該等目標晶粒的其中之一往靠近基板的方向移動,直至該等目標晶粒的其中之一轉移至該等晶粒放置區的其中之一為止;以及其中,反覆進行位置調整步驟和轉移步驟,直至該等目標晶粒依序轉移至該等晶粒放置區為止。In some embodiments, in the preparation step, the first surface of the carrier film faces the plurality of pushers, the arrangement of the plurality of dies in the main target area is uneven, and the plurality of dies in the main target area is defined as the plurality of targets For the die, the substrate has a plurality of die placement areas, and the axes of the target die are respectively staggered from the axes of the die placement areas; wherein, in the fixing step, the pushers move to the main target block; wherein, in the position adjustment step, the adsorption device moves the main target block by negative pressure until the axis of one of the target die is aligned with the axis of one of the die placement areas ; Wherein, in the transfer step, one of the push pieces pushes one of the target die to move in a direction close to the substrate through the carrier film, until one of the target die is transferred to the wait until one of the die placement areas; and wherein, the position adjustment step and the transfer step are repeatedly performed until the target die are sequentially transferred to the die placement areas.
在一些實施例中,在固定步驟中,一影像擷取裝置擷取至少一目標晶粒、至少一頂推件和至少一晶粒放置區的一影像,以獲得一第一影像資訊,並且將第一影像資訊傳送至一控制裝置,控制裝置根據第一影像資訊判斷出至少一目標晶粒的軸線與至少一晶粒放置區的軸線之間的一間距及一方位,以獲得一調整訊息;以及其中,在位置調整步驟中,控制裝置根據調整訊息控制吸附裝置藉由負壓移動主要目標區塊,直至至少一目標晶粒的軸線與至少一晶粒放置區的軸線對齊為止,控制裝置控制吸附裝置停止移動,並且進一步開始執行轉移步驟,使得控制裝置進一步控制至少一頂推件往承載膜的方向移動。In some embodiments, in the fixing step, an image capture device captures an image of at least one target die, at least one pusher, and at least one die placement area to obtain a first image information, and The first image information is sent to a control device, and the control device determines a distance and an orientation between the axis of the at least one target die and the axis of the at least one die placement area according to the first image information, so as to obtain an adjustment information; And wherein, in the position adjustment step, the control device controls the adsorption device to move the main target block by negative pressure according to the adjustment information until the axis of at least one target die is aligned with the axis of at least one die placement area, and the control device controls The adsorption device stops moving, and further starts to perform the transfer step, so that the control device further controls the movement of the at least one pusher in the direction of the carrier film.
較佳地,在位置調整步驟中,在主要目標區塊內的複數晶粒沿著承載膜的第二表面移動的過程中,影像擷取裝置擷取至少一目標晶粒、至少一頂推件和至少一晶粒放置區的一影像,以獲得一第二影像資訊,並且將第二影像資訊傳送至控制裝置,控制裝置根據第二影像資訊判斷出至少一目標晶粒的軸線是否與至少一晶粒放置區的軸線對齊;其中,當控制裝置根據第二影像資訊判斷出至少一目標晶粒的軸線與至少一晶粒放置區的軸線對齊時,控制裝置控制吸附裝置停止移動,並且進一步開始執行轉移步驟,使得控制裝置進一步控制至少一頂推件往承載膜的方向移動;以及其中,當控制裝置根據第二影像資訊判斷出至少一目標晶粒的軸線尚未與至少一晶粒放置區的軸線對齊時,控制裝置根據第二影像資訊判斷出至少一目標晶粒的軸線與至少一晶粒放置區的軸線之間的一間距及一方位,以獲得一校正訊息,控制裝置根據校正訊息控制吸附裝置藉由負壓移動主要目標區塊,直至至少一目標晶粒的軸線與至少一晶粒放置區的軸線對齊為止,控制裝置控制吸附裝置停止移動,並且進一步開始執行轉移步驟,使得控制裝置進一步控制至少一頂推件往承載膜的方向移動。Preferably, in the position adjustment step, the image capture device captures at least one target die and at least one pusher during the movement of the plurality of dies in the main target block along the second surface of the carrier film. and an image of at least one die placement area to obtain a second image information, and transmit the second image information to the control device, and the control device determines whether the axis of the at least one target die is in line with the at least one according to the second image information. The axes of the die placement area are aligned; wherein, when the control device determines that the axis of the at least one target die is aligned with the axis of the at least one die placement area according to the second image information, the control device controls the adsorption device to stop moving, and further starts Execute the transfer step, so that the control device further controls the at least one pusher to move in the direction of the carrier film; and wherein, when the control device determines according to the second image information that the axis of the at least one target die has not been aligned with the axis of the at least one die placement area When the axes are aligned, the control device determines a distance and an orientation between the axis of the at least one target die and the axis of the at least one die placement area according to the second image information, so as to obtain a calibration information, and the control device controls the control device according to the calibration information The adsorption device moves the main target block by negative pressure until the axis of at least one target die is aligned with the axis of at least one die placement area, the control device controls the adsorption device to stop moving, and further starts to perform the transfer step, so that the control device Further control the movement of at least one pushing member toward the direction of the carrier film.
在一些實施例中,在準備步驟中,至少一頂推件的一軸線對準至少一晶粒放置區的軸線;以及其中,在位置調整步驟中,吸附裝置藉由負壓移動主要目標區塊,直至至少一目標晶粒的軸線同時與至少一頂推件的軸線以及至少一晶粒放置區的軸線對齊為止,吸附裝置停止移動。In some embodiments, in the preparation step, an axis of the at least one pusher is aligned with the axis of the at least one die placement area; and wherein, in the position adjustment step, the adsorption device moves the main target block by negative pressure , until the axis of at least one target die is simultaneously aligned with the axis of at least one pusher and the axis of at least one die placement area, the adsorption device stops moving.
在一些實施例中,在轉移步驟之後更包括轉換目標步驟,吸附裝置停止藉由負壓吸附主要目標區塊的周圍,主要目標區塊內的複數晶粒的至少另一者界定為至少另一目標晶粒,移動整塊承載膜和該基板,直至至少另一目標晶粒的一軸線與至少另一晶粒放置區的一軸線對齊為止;其中,在轉換目標步驟結束之後接著進行轉移步驟;以及其中,反覆進行轉換目標步驟和轉移步驟,直至主要目標區塊內的全部晶粒轉移至基板為止。In some embodiments, after the transferring step, a target switching step is further included, the adsorption device stops adsorbing the surrounding of the main target block by negative pressure, and at least another one of the plurality of dies in the main target block is defined as at least another For the target die, the entire carrier film and the substrate are moved until an axis of at least another target die is aligned with an axis of at least another die placement area; wherein, the transfer step is performed after the conversion of the target step is completed; And wherein, the conversion target step and the transfer step are repeatedly performed until all the die in the main target area are transferred to the substrate.
本發明的功效在於,本發明的晶粒高速定位方法能夠先透過負壓小範圍固定主要目標區塊的周圍,再透過負壓移動主要目標區塊,使得目標晶粒的軸線能夠精準地對齊晶粒放置區的軸線,無須移動整塊承載膜,大幅減少補償位置時承載膜所需移動的質量,移動速度快。The effect of the present invention is that the high-speed positioning method of the die of the present invention can first fix the periphery of the main target block through a small range of negative pressure, and then move the main target block through the negative pressure, so that the axis of the target die can be accurately aligned with the die. The axis of the particle placement area does not need to move the entire carrier film, which greatly reduces the mass of the carrier film to move when compensating the position, and the moving speed is fast.
以下配合圖式及元件符號對本發明的實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。The embodiments of the present invention will be described in more detail below with reference to the drawings and component symbols, so that those skilled in the art can implement them after studying the description.
請參閱圖1至圖10,本發明提供一種晶粒高速定位方法,包括下列步驟:Please refer to FIG. 1 to FIG. 10 , the present invention provides a high-speed die positioning method, which includes the following steps:
準備步驟S1,如圖1及圖2A至圖2E所示,一承載膜10的一第一表面11朝向一吸附裝置20及一頂推件30,承載膜10的一第二表面12朝向一基板40並且具有複數晶粒50,承載膜10依據該等晶粒50的數量區隔成複數區塊,其中一個區塊界定為一主要目標區塊13,其餘區塊界定為複數其他目標區塊14,主要目標區塊13內的複數晶粒50排列整齊,主要目標區塊13內的複數晶粒50的其中之一界定為一目標晶粒51。基板40具有一晶粒放置區41。吸附裝置20對準主要目標區塊13的周圍。頂推件30的一軸線31對準晶粒放置區41的一軸線411,目標晶粒51的一軸線511同時與頂推件30的軸線31以及晶粒放置區41的一軸線411錯開。In preparation step S1 , as shown in FIGS. 1 and 2A to 2E , a
更明確地說,承載膜10的兩端分別位於一承載框90上,二夾具(圖未示)夾住承載框90,一控制裝置80控制承載框90移動整塊承載膜10,直至吸附裝置20對準主要目標區塊13的周圍為止。More specifically, both ends of the
較佳地,如圖2C、圖3及圖4所示,吸附裝置20呈環狀以形成一軸孔21並且開設複數氣孔22,該等氣孔22連接一真空裝置60,頂推件30可移動地位於軸孔21中。如圖2E及圖4所示,一影像擷取裝置70位於基板40相對於承載膜10的一側。Preferably, as shown in FIG. 2C , FIG. 3 and FIG. 4 , the
固定步驟S2,如圖1及圖5所示,一控制裝置80控制吸附裝置20移動至主要目標區塊13的周圍,真空裝置60對該等氣孔22抽氣以產生真空並且提供一負壓601,吸附裝置20藉由負壓601吸附主要目標區塊13的周圍,控制裝置80控制頂推件30移動至主要目標區塊13。如圖5至圖7所示,影像擷取裝置70擷取目標晶粒51、頂推件30和晶粒放置區41的一影像,以獲得一第一影像資訊71,並且將第一影像資訊71傳送至控制裝置80,控制裝置80根據第一影像資訊71判斷出目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411之間的一間距及一方位,以獲得一調整訊息81。In the fixing step S2, as shown in FIG. 1 and FIG. 5 , a
位置調整步驟S3,如圖1、圖8A和圖8B所示,控制裝置80根據調整訊息81控制吸附裝置20藉由負壓601移動主要目標區塊13,直至目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊為止,控制裝置80控制吸附裝置20停止移動。進一步地說,如圖9所示,在主要目標區塊13內的複數晶粒50沿著承載膜10的第二表面12移動的過程中,影像擷取裝置70擷取目標晶粒51、頂推件30和晶粒放置區41的一影像,以獲得一第二影像資訊72,並且將第二影像資訊72傳送至控制裝置80,控制裝置80根據第二影像資訊72判斷出目標晶粒51的軸線511是否同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊。當控制裝置80根據第二影像資訊72判斷出目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊時,控制裝置80控制吸附裝置20停止移動。當控制裝置80根據第二影像資訊72判斷出目標晶粒51的軸線511尚未同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊時,控制裝置80根據第二影像資訊72判斷出目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411之間的一間距及一方位,以獲得一校正訊息82。控制裝置80根據校正訊息82控制吸附裝置20負壓601移動主要目標區塊13,直至目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊為止。In the position adjustment step S3, as shown in FIG. 1 , FIG. 8A and FIG. 8B , the
轉移步驟S4,如圖1及圖10所示,控制裝置80控制頂推件30往承載膜10的方向移動,頂推件30透過承載膜10推動目標晶粒51往靠近基板40的方向移動,直至目標晶粒51轉移至晶粒放置區41為止。In transfer step S4, as shown in FIG. 1 and FIG. 10 , the
進一步地說,如圖2A至圖2E所示,在尚未進行本發明的方法以前,在準備步驟S1中,吸附裝置20和頂推件30並沒有接觸承載膜10的第一表面11,因此如圖5所示,在固定步驟S2中,控制裝置80需先控制吸附裝置20和頂推件30沿著一垂直方向移動至承載膜10的第一表面11。Further, as shown in FIGS. 2A to 2E , before the method of the present invention is performed, in the preparation step S1 , the
反覆進行準備步驟S1、固定步驟S2、位置調整步驟S3和轉移步驟S4,直至第一個主要目標區塊13上的全部晶粒50轉移至複數晶粒放置區41為止。在第一個主要目標區塊13上的全部晶粒50轉移至該等晶粒放置區41以後,其他目標區塊14的其中之一被選定為下一個主要目標區塊13,此時重新回到準備步驟S1,吸附裝置20和頂推件30則保持抵靠在承載膜10的第一表面11。在固定步驟S2中,吸附裝置20和頂推件30移動至下一個主要目標區塊13的方式有兩種:其一,承載膜10保持不動,控制裝置80控制吸附裝置20和頂推件30沿著承載膜10的第一表面11直接移動至下一個主要目標區塊13;其二,吸附裝置20和頂推件30保持不動,控制裝置80控制承載膜10移動,使得吸附裝置20和頂推件30間接移動至下一個主要目標區塊13。後續的位置調整步驟S3和轉移步驟S4則如前所述。The preparation step S1 , the fixing step S2 , the position adjustment step S3 and the transfer step S4 are repeatedly performed until all the
在所有晶粒50都轉移至基板40以後,控制裝置80控制吸附裝置20和頂推件30遠離承載膜10。After all the
請參閱圖11,圖11是本發明的第一實施例的影像擷取裝置70的位置改變的示意圖。影像擷取裝置70的位置亦可改成位於吸附裝置20和頂推件30相對於承載膜10的一側。Please refer to FIG. 11 . FIG. 11 is a schematic diagram of the position change of the
值得一提的是,在第一實施例的準備步驟S1中,即使主要目標區塊13內的複數晶粒50排列參差不齊(圖未示),亦可藉由第一實施例的固定步驟S2、位置調整步驟S3和轉移步驟S4完成將目標晶粒51轉移至晶粒放置區41的目的。It is worth mentioning that in the preparation step S1 of the first embodiment, even if the arrangement of the plurality of
另外,在其他實施例的準備步驟S1中,頂推件30的軸線31亦可與晶粒放置區41的軸線411錯開。因此,在位置調整步驟S3中,吸附裝置20藉由負壓移動主要目標區塊13,直至目標晶粒51的軸線511與晶粒放置區41的軸線411對齊為止,吸附裝置20停止移動。In addition, in the preparation step S1 in other embodiments, the axis 31 of the pushing
請參閱圖12至圖16,第二實施例與第一實施例的差異在於:如圖12所示,在準備步驟S1中,承載膜10的第一表面11朝向複數頂推件30,主要目標區塊13內的複數晶粒50排列整齊,主要目標區塊13內的複數晶粒50界定為複數目標晶粒51,基板40具有複數晶粒放置區41,該等頂推件30的該等軸線31分別對準該等晶粒放置區41的該等軸線411,該等目標晶粒51的該等軸線511分別同時與該等頂推件30的該等軸線31以及該等晶粒放置區41的該等軸線411錯開。如圖13及圖14所示,在固定步驟S2中,控制裝置80控制該等頂推件30移動至主要目標區塊13。如圖6及圖15所示,在位置調整步驟S3中,控制裝置80根據調整訊息81控制吸附裝置20藉由負壓601移動主要目標區塊13,直至該等目標晶粒51的該等軸線511分別同時與該等頂推件30的該等軸線31以及該等晶粒放置區41的該等軸線411對齊為止。如圖16A至圖16E所示,在轉移步驟S4中,該等頂推件30依序透過承載膜10推動該等目標晶粒51往靠近基板40的方向移動,直至該等目標晶粒51依序轉移至該等晶粒放置區41為止。換言之,控制裝置80亦可一次控制一個頂推件30藉由承載膜10推動一個目標晶粒51。Referring to FIGS. 12 to 16 , the difference between the second embodiment and the first embodiment is: as shown in FIG. 12 , in the preparation step S1 , the
值得一提的是,在第二實施例的轉移步驟S4的另一種操作模式中,控制裝置80控制該等頂推件30分別透過承載膜10推動該等目標晶粒51往靠近基板40的方向移動,直至該等目標晶粒51一起轉移至該等晶粒放置區41為止。換言之,控制裝置80能夠一次控制全部頂推件30藉由承載膜10同步推動全部目標晶粒51。It is worth mentioning that, in another operation mode of the transfer step S4 of the second embodiment, the
請參閱圖1和圖17,在轉移步驟S4之後更包括轉換目標步驟S5,控制裝置80控制真空裝置60停止抽氣,使得吸附裝置20停止藉由負壓601吸附主要目標區塊13的周圍,主要目標區塊13內的另外數個晶粒界定為複數目標晶粒51,控制裝置80控制承載框90移動整塊承載膜10以及控制基板40移動,直至該等目標晶粒51的該等軸線511分別與該等頂推件30的該等軸線31以及另外數個晶粒放置區41的該等軸線411對齊為止。在轉換目標步驟S5結束之後接著進行轉移步驟S4。反覆進行轉換目標步驟S5和轉移步驟S4,直至主要目標區塊13內的全部晶粒50轉移至基板40為止。Please refer to FIG. 1 and FIG. 17 , after the transfer step S4, it further includes a target switching step S5, the
請參閱圖18及圖19,第三實施例與第二實施例的差異在於:如圖18所示,在準備步驟S1中,主要目標區塊13內的複數晶粒50排列參差不齊。如圖19所示,在位置調整步驟S3中,控制裝置80根據調整訊息81控制吸附裝置20藉由負壓601移動主要目標區塊13,直至該等目標晶粒51的其中之一的軸線511同時與該等頂推件30的其中之一的軸線31以及該等晶粒放置區41的其中之一的軸線411對齊為止。如圖20所示,在轉移步驟S4中,該等頂推件30的其中之一透過承載膜10推動該等目標晶粒51的其中之一往靠近基板40的方向移動,直至該等目標晶粒51的其中之一轉移至該等晶粒放置區41的其中之一為止。如圖1所示,反覆進行位置調整步驟S3和轉移步驟S4,直至該等目標晶粒51依序轉移至該等晶粒放置區41為止。Please refer to FIG. 18 and FIG. 19 . The difference between the third embodiment and the second embodiment is that, as shown in FIG. 18 , in the preparation step S1 , the arrangement of the plurality of dies 50 in the
綜上所述,本發明的晶粒高速定位方法能夠先透過負壓601小範圍固定主要目標區塊13的周圍,再透過負壓601移動主要目標區塊13,使得目標晶粒51的軸線511能夠精準地對齊晶粒放置區41的軸線411,無須移動整塊承載膜10,大幅減少補償位置時承載膜10所需移動的質量,移動速度快。To sum up, the high-speed die positioning method of the present invention can first fix the periphery of the
再者,無論主要目標區塊13內的複數晶粒50排列整齊或參差不齊,本發明的晶粒高速定位方法都能夠讓目標晶粒51的軸線511精準地對齊晶粒放置區41的軸線411。Furthermore, regardless of whether the plurality of dies 50 in the
此外,本發明的晶粒高速定位方法能夠適用於單一頂推件30,也能夠適用於複數頂推件30,並且配合主要目標區塊13內的複數晶粒50排列整齊或參差不齊而提供不同的操作模式。In addition, the high-speed die positioning method of the present invention can be applied to a
又,本發明的晶粒高速定位方法能夠藉由影像擷取裝置70和控制裝置80精準地判斷出目標晶粒51與晶粒放置區41的相對位置,有助於控制裝置80精準地控制吸附裝置20將目標晶粒51移動至正確位置,讓目標晶粒51的軸線511能夠與晶粒放置區41的軸線411對齊,確保頂推件30能夠精準地將目標晶粒51轉移至晶粒放置區41。In addition, the high-speed die positioning method of the present invention can accurately determine the relative position of the target die 51 and the
另外,在主要目標區塊13內的複數晶粒50沿著承載膜10的第二表面12移動的過程中,本發明的晶粒高速定位方法能夠藉由影像擷取裝置70和控制裝置80不斷地校正目標晶粒51與晶粒放置區41的相對位置,使得目標晶粒51的最終位置與正確位置零誤差。In addition, during the process of the plurality of dies 50 in the
還有,如果頂推件30的軸線31與晶粒放置區41的軸線411能夠對齊,則頂推件30能夠以最精準的角度將目標晶粒51轉移至晶粒放置區41。Also, if the axis 31 of the
以上所述者僅為用以解釋本發明的較佳實施例,並非企圖據以對本發明做任何形式上的限制,是以,凡有在相同的發明精神下所作有關本發明的任何修飾或變更,皆仍應包括在本發明意圖保護的範疇。The above descriptions are only used to explain the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Therefore, any modification or change of the present invention should be made under the same spirit of the invention. , all should still be included in the intended protection scope of the present invention.
10:承載膜 11:第一表面 12:第二表面 13:主要目標區塊 14:其他目標區塊 20:吸附裝置 21:軸孔 22:氣孔 30:頂推件 31:軸線 40:基板 41:晶粒放置區 411:軸線 50:晶粒 51:目標晶粒 511:軸線 60:真空裝置 601:負壓 70:影像擷取裝置 71:第一影像資訊 72:第二影像資訊 80:控制裝置 81:調整訊息 82:校正訊息 90:承載框 S1:準備步驟 S2:固定步驟 S3:位置調整步驟 S4:轉移步驟 S5:轉換目標步驟10: Carrier film 11: The first surface 12: Second surface 13: Main target block 14: Other target blocks 20: Adsorption device 21: Shaft hole 22: Stomata 30: Push pieces 31: Axis 40: Substrate 41: Die placement area 411: Axis 50: grain 51: target die 511: Axis 60: Vacuum device 601: Negative pressure 70: Image capture device 71: First Image Information 72: Second Image Information 80: Control device 81: Adjust the message 82: Correction message 90: carrying frame S1: Preparation steps S2: Fixed step S3: Position adjustment steps S4: Transfer step S5: Conversion target step
[圖1〕是本發明的晶粒高速定位方法的流程圖。 [圖2A〕至[圖2E〕是本發明的第一實施例的準備步驟的示意圖。 [圖3〕是本發明的第一實施例的吸附裝置和頂推件的仰視圖。 [圖4〕是本發明的第一實施例的吸附裝置、頂推件、影像擷取裝置、控制裝置的結構示意圖。 [圖5〕是本發明的第一實施例的固定步驟的示意圖。 〔圖6〕是本發明的第一實施例的第一影像資訊和調整訊息的傳送示意圖。 [圖7〕是本發明的第一實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列整齊,一目標晶粒的一軸線同時與一頂推件的一軸線以及一晶粒放置區的一軸線錯開。 [圖8A〕是本發明的第一實施例的吸附裝置移動主要目標區塊的立體圖。 [圖8B〕是本發明的第一實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列整齊,一目標晶粒的一軸線同時與一頂推件的一軸線以及一晶粒放置區的一軸線對齊。 〔圖9〕是本發明的第一實施例的第二影像資訊和校正訊息的傳送示意圖。 [圖10〕是本發明的第一實施例的轉移步驟的示意圖。 [圖11〕是本發明的第一實施例的影像擷取裝置的位置改變的示意圖。 [圖12〕是本發明的第二實施例的準備步驟的示意圖。 [圖13〕是本發明的第二實施例的固定步驟的示意圖。 [圖14〕是本發明的第二實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列整齊,複數目標晶粒的複數軸線分別同時與複數頂推件的複數軸線以及複數晶粒放置區的複數軸線錯開。 [圖15〕是本發明的第二實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列整齊,複數目標晶粒的複數軸線同時與複數頂推件的複數軸線以及複數晶粒放置區的複數軸線對齊。 [圖16A〕至[圖16E〕是本發明的第二實施例的轉移步驟的示意圖。 [圖17〕是本發明的第二實施例的轉換目標步驟的示意圖。 [圖18〕是本發明的第三實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列參差不齊,複數目標晶粒的複數軸線分別同時與複數頂推件的複數軸線以及複數晶粒放置區的複數軸線錯開。 [圖19〕是本發明的第二實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列參差不齊,其中一目標晶粒的軸線與其中一頂推件的軸線以及其中一晶粒放置區的軸線對齊,其餘目標晶粒的複數軸線分別同時與其餘頂推件的複數軸線以及其餘晶粒放置區的複數軸線錯開。 [圖20〕是本發明的第三實施例的轉移步驟的示意圖。 [ Fig. 1 ] is a flowchart of the high-speed die positioning method of the present invention. [ FIG. 2A ] to [ FIG. 2E ] are schematic diagrams of preparation steps of the first embodiment of the present invention. [ Fig. 3 ] is a bottom view of the adsorption device and the pusher according to the first embodiment of the present invention. [ FIG. 4 ] is a schematic structural diagram of an adsorption device, a pusher, an image capture device, and a control device according to the first embodiment of the present invention. [ Fig. 5 ] is a schematic diagram of the fixing step of the first embodiment of the present invention. [FIG. 6] is a schematic diagram of the transmission of the first image information and the adjustment information according to the first embodiment of the present invention. [ FIG. 7 ] is a bottom view of the carrier film according to the first embodiment of the present invention, wherein the plurality of crystal grains in the target area are arranged in order, and an axis of a target crystal grain is simultaneously connected with an axis of a pusher and a crystal grain. One axis of the particle placement area is staggered. [ Fig. 8A ] is a perspective view of the main target block for moving the adsorption device according to the first embodiment of the present invention. [ FIG. 8B ] is a bottom view of the carrier film according to the first embodiment of the present invention, wherein the plurality of crystal grains in the target block are arranged in order, and an axis of a target crystal grain is simultaneously connected with an axis of a pusher and a crystal grain. One axis of the particle placement area is aligned. [ FIG. 9 ] is a schematic diagram of the transmission of the second image information and the correction information according to the first embodiment of the present invention. [ FIG. 10 ] is a schematic diagram of the transfer step of the first embodiment of the present invention. [ FIG. 11 ] is a schematic diagram of the position change of the image capturing device according to the first embodiment of the present invention. [ Fig. 12 ] is a schematic diagram of a preparation step of the second embodiment of the present invention. [ Fig. 13 ] is a schematic diagram of the fixing step of the second embodiment of the present invention. [ FIG. 14 ] is a bottom view of the carrier film according to the second embodiment of the present invention, wherein the plurality of crystal grains in the target block are arranged neatly, and the plurality of axes of the plurality of target crystal grains are respectively at the same time as the plurality of the plurality of push pieces. The plural axes of the die placement areas are offset. [FIG. 15] is a bottom view of the carrier film according to the second embodiment of the present invention, wherein the plurality of crystal grains in the target area are arranged neatly, and the plurality of axes of the plurality of target crystal grains are simultaneously with the plurality of axes of the plurality of ejectors and the plurality of crystal grains. The plural axes of the grain placement area are aligned. [FIG. 16A] to [FIG. 16E] are schematic diagrams of transfer steps of the second embodiment of the present invention. [ FIG. 17 ] is a schematic diagram of the conversion target step of the second embodiment of the present invention. [ FIG. 18 ] is a bottom view of the carrier film according to the third embodiment of the present invention, wherein the plurality of crystal grains in the target block are unevenly arranged, and the plurality of axes of the plurality of target crystal grains are respectively simultaneously with the plurality of axes of the plurality of ejectors. and the plural axes of the plural grain placement areas are staggered. [FIG. 19] is a bottom view of the carrier film according to the second embodiment of the present invention, wherein the plurality of crystal grains in the target area are unevenly arranged, and the axis of one of the target crystal grains and the axis of one of the push members and the The axes of one die placement area are aligned, and the multiple axes of the remaining target die are simultaneously offset from the multiple axes of the remaining push members and the multiple axes of the remaining die placement areas. [ FIG. 20 ] is a schematic diagram of the transfer step of the third embodiment of the present invention.
S1:準備步驟 S1: Preparation steps
S2:固定步驟 S2: Fixed step
S3:位置調整步驟 S3: Position adjustment steps
S4:轉移步驟 S4: Transfer step
S5:轉換目標目驟 S5: Conversion target step
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US20160276205A1 (en) * | 2015-03-20 | 2016-09-22 | Rohinni, Inc. | Method and Apparatus for Transfer of Semiconductor Devices |
TW201947696A (en) * | 2018-05-12 | 2019-12-16 | 美商羅茵尼公司 | Method and apparatus for multiple direct transfers of semiconductor devices |
TW202018443A (en) * | 2018-09-28 | 2020-05-16 | 美商羅茵尼公司 | Method and apparatus to control transfer parameters during transfer of semiconductor devices |
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US20160276205A1 (en) * | 2015-03-20 | 2016-09-22 | Rohinni, Inc. | Method and Apparatus for Transfer of Semiconductor Devices |
US20170140967A1 (en) * | 2015-03-20 | 2017-05-18 | Rohinni, LLC | Apparatus and Method for Direct Transfer of Semiconductor Devices via Stacking |
TW201947696A (en) * | 2018-05-12 | 2019-12-16 | 美商羅茵尼公司 | Method and apparatus for multiple direct transfers of semiconductor devices |
TW202018443A (en) * | 2018-09-28 | 2020-05-16 | 美商羅茵尼公司 | Method and apparatus to control transfer parameters during transfer of semiconductor devices |
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