KR20150007214A - Joining apparatus, joining system, joining method, and computer recording medium - Google Patents

Joining apparatus, joining system, joining method, and computer recording medium Download PDF

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KR20150007214A
KR20150007214A KR1020140079085A KR20140079085A KR20150007214A KR 20150007214 A KR20150007214 A KR 20150007214A KR 1020140079085 A KR1020140079085 A KR 1020140079085A KR 20140079085 A KR20140079085 A KR 20140079085A KR 20150007214 A KR20150007214 A KR 20150007214A
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South Korea
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substrate
wafer
holding
chuck
imaging
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KR1020140079085A
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Korean (ko)
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나오키 아키야마
마사히코 스기야마
요스케 오모리
신지 아카이케
히데아키 다나카
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도쿄엘렉트론가부시키가이샤
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Publication of KR20150007214A publication Critical patent/KR20150007214A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The position of the first holding portion for holding the first substrate and the position of the second holding portion for holding the second substrate in the horizontal direction is appropriately adjusted so that the joining process of the substrates is appropriately performed. Bonding device 41, the upper wafer (W U) and the lower wafer (W L), the processing container 100, are installed is fixed to the processing vessel 100, the top wafer (W U) on the bottom for accommodating the A lower chuck 141 which is installed below the upper chuck 140 and holds a lower wafer W L on the upper surface thereof and a lower chuck 141 which holds the lower chuck 141 horizontally and vertically moving the first and the lower chuck moving part 160 and the second lower chuck moving part (166) mounted to the upper chuck (140), sensing the surface of the lower wafer (W L) held on the lower chuck 141 to And a lower imaging section 161 provided on the lower chuck 141 for imaging the surface of the upper wafer W U held by the upper chuck 140.

Figure P1020140079085

Description

TECHNICAL FIELD [0001] The present invention relates to a joining apparatus, a joining system, a joining method, and a computer storage medium having a joining apparatus,

The present invention relates to a bonding apparatus, a bonding system, a bonding method, and a computer storage medium for bonding substrates to each other.

In recent years, high integration of semiconductor devices has been progressing. When a plurality of highly integrated semiconductor devices are arranged in a horizontal plane and these semiconductor devices are connected to each other by wiring to produce a product, the wiring length is increased, thereby increasing the resistance of the wiring and increasing the wiring delay.

Therefore, it has been proposed to use a three-dimensional integration technique for stacking semiconductor devices three-dimensionally. In this three-dimensional integration technique, for example, bonding of two semiconductor wafers (hereinafter referred to as " wafers ") is performed using the bonding system described in Patent Document 1. [ For example, the bonding system may include a surface modification device (surface activation device) for modifying the surface to be bonded of the wafer, a surface hydrophilicization device for hydrophilizing the surface of the wafer modified by the surface modification device, And a bonding apparatus for bonding the wafers whose surfaces have been hydrophilized by the apparatus. In this bonding system, the surface of the wafer is subjected to plasma treatment in the surface modifying apparatus to modify the surface of the wafer. In addition, pure water is supplied to the surface of the wafer in the surface hydrophilizing apparatus to hydrophilize the surface, The wafers are bonded to each other by a van der Waals force and hydrogen bonding (intermolecular force).

In the above bonding apparatus, the upper chuck is used to hold one wafer (hereinafter referred to as "upper wafer"), and another wafer (hereinafter referred to as "lower wafer") is held by using a lower chuck provided below the upper chuck, The upper wafer and the lower wafer are bonded to each other. Then, before joining the wafers together, adjustment of the horizontal position of the upper chuck and the lower chuck is performed. Specifically, the lower imaging member (chuck camera) is moved in the horizontal direction, the upper surface of the upper wafer held by the upper chuck is imaged by the lower imaging member, and the upper imaging member (bridge camera) The upper surface of the lower wafer held by the lower chuck is picked up by the upper imaging member and the horizontal position of the upper chuck and the lower chuck is adjusted so that the reference points of the upper wafer and the lower wafer coincide with each other.

Japanese Patent Application Laid-Open No. 2007-175043

However, as a result of intensive investigations by the inventors, it has been found that when the upper chuck and the lower chuck are configured to be movable in the horizontal direction, the upper chuck and the lower chuck move slightly with time. Further, the upper image pickup member and the lower image pickup member are also configured to be movable, respectively, and it has been found that the upper image pickup member and the lower image pickup member also move slightly with the passage of time.

In this case, even if the position adjustment is performed using the upper image pickup member and the lower image pickup member, the upper chuck and the lower chuck can not be disposed at appropriate positions in the horizontal direction. Therefore, when the wafers are bonded to each other, there is a possibility that the upper wafer and the lower wafer are misaligned to each other, and there is a room for improvement in the bonding treatment between the wafers.

The present invention relates to a bonding apparatus, a bonding system, a bonding system, and a bonding apparatus which appropriately perform a bonding process between substrates by appropriately adjusting a horizontal position of a first holding portion holding a first substrate and a second holding portion holding a second substrate, Method, and computer storage medium.

In order to achieve the above object, the present invention provides a bonding apparatus for bonding substrates to each other, the bonding apparatus comprising: a processing vessel for receiving and bonding the first substrate and the second substrate; And a second holding section provided below the first holding section in the processing container and holding the second substrate on an upper surface thereof; A moving mechanism configured to move the second holding unit in the horizontal direction and the vertical direction; a first imaging unit provided in the first holding unit and configured to pick up an image of a surface of the second substrate held by the second holding unit; And a second image pickup unit provided in the second holding unit and configured to pick up an image of the surface of the first substrate held by the first holding unit.

According to another aspect of the present invention, there is provided a bonding system including the bonding apparatus, comprising: a processing station having the bonding apparatus; and a first substrate, a second substrate or a polymer substrate bonded with the first substrate and the second substrate, And a transfer station for loading and unloading the first substrate, the second substrate, or the polymerized substrate to and from the processing station, wherein the processing station is capable of holding a plurality of A surface modification device for modifying the surface to be bonded, a surface hydrophilic device for hydrophilizing the surface of the first substrate or the second substrate modified by the surface modification device, And a transfer device for transferring the first substrate, the second substrate, or the polymerized substrate to the bonding apparatus, wherein in the bonding apparatus, And bonding the first substrate and the second substrate, the surfaces of which have been hydrophilized by the hydrophilic hydrophilic unit.

According to another aspect of the present invention, there is provided a joining method for joining substrates together using a joining apparatus, the joining apparatus comprising: a processing vessel for accommodating and joining a first substrate and a second substrate; A first holding part which is fixed to the processing vessel and holds the first substrate on a lower surface thereof; and a second holding part which is provided below the first holding part in the processing vessel, A moving mechanism for moving the second holding unit in the horizontal direction and the vertical direction; a second holding unit provided on the first holding unit, for picking up a surface of the second substrate held by the second holding unit; And a second imaging section that is provided in the second holding section and that images the surface of the first substrate held by the first holding section, The second kind A second step of moving the second holding part in the horizontal direction to adjust a horizontal position of the second image pickup part; and a second step of moving the second holding part in the horizontal direction by the moving mechanism, Wherein the surface of the substrate is imaged by the first imaging unit and the surface of the first substrate held by the first holding unit is imaged by the second imaging unit, A second step of adjusting a horizontal position of the holding part and a third step of bonding the first substrate held by the first holding part and the second substrate held by the second holding part in opposition to each other.

According to another aspect of the present invention, there is provided a computer-readable medium having stored thereon a program for operating on a computer of a control unit for controlling the joining apparatus in order to execute the joining method by the joining apparatus.

According to the present invention, since the first holding portion is fixed to the processing container and the first imaging portion is fixed to the processing container together with the first holding portion, the first holding portion and the first imaging portion do not move with time . That is, the reliability of the bonding apparatus is improved. In such a joining apparatus, first, the moving mechanism moves the second holding portion in the horizontal direction to adjust the horizontal position of the second image pickup portion. At this time, since the first imaging unit is fixed to the processing container, only the second imaging unit can be moved, so that the horizontal position of the first imaging unit and the second imaging unit can be appropriately adjusted. Thereafter, while the second holding portion is moved in the horizontal direction by the moving mechanism, the surface of the second substrate held by the second holding portion is imaged by the first imaging portion, and the first substrate held by the first holding portion After the surface of the substrate is imaged by the second imaging section, the horizontal position of the second holding section is adjusted by the moving mechanism. At this time, since the first holding portion is fixed to the processing container, only the second holding portion can be moved, so that the horizontal position of the first holding portion and the second holding portion can be appropriately adjusted. That is, the adjustment accuracy of the horizontal position of the first holding portion and the second holding portion can be improved. Therefore, after that, the first substrate held by the first holding portion and the second substrate held by the second holding portion can be suitably bonded.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view schematically showing a configuration of a bonding system according to the present embodiment; Fig.
2 is a side view schematically showing the internal structure of the bonding system according to the present embodiment.
3 is a side view schematically showing the configuration of the upper wafer and the lower wafer.
4 is a cross-sectional view schematically showing a configuration of a bonding apparatus;
5 is a longitudinal sectional view schematically showing a configuration of a bonding apparatus;
6 is a side view schematically showing the configuration of the position adjusting mechanism;
7 is a plan view schematically showing the configuration of the reversing mechanism;
8 is a side view schematically showing the configuration of the reversing mechanism.
9 is a side view schematically showing the configuration of the reversing mechanism;
10 is a side view schematically showing the configuration of the holding arm and the holding member;
11 is a side view schematically showing the internal configuration of the bonding apparatus;
FIG. 12 is an explanatory view showing an outline of the configuration of the upper image pickup section (lower image pickup section); FIG.
13 is a longitudinal sectional view schematically showing the configuration of the upper chuck and the lower chuck.
14 is a plan view of the upper chuck viewed from below.
15 is a plan view of the lower chuck viewed from above;
16 is a flowchart showing a main process of the wafer bonding process.
FIG. 17 is an explanatory view in terms of a view for adjusting the horizontal position of the upper image pickup section and the lower image pickup section; FIG.
18 is an explanatory view in plan view showing a state in which the position of the upper imaging unit and the lower imaging unit are adjusted in the horizontal direction;
19 is an explanatory view in terms of a view for adjusting the horizontal position of the upper chuck and the lower chuck;
20 is an explanatory view in plan view showing a state in which a horizontal position of the upper chuck and the lower chuck is adjusted;
21 is an explanatory view in terms of a view for adjusting the horizontal position of the upper chuck and the lower chuck;
22 is an explanatory view in plan view showing a state in which a horizontal position of the upper chuck and the lower chuck is adjusted.
23 is an explanatory view in terms of a view for adjusting the vertical position of the upper chuck and the lower chuck;
24 is an explanatory view showing a state in which the central portion of the upper wafer and the central portion of the lower wafer are pressed against each other.
25 is an explanatory view showing a state in which an upper wafer is sequentially brought into contact with a lower wafer;
26 is an explanatory view showing a state in which the surface of the upper wafer and the surface of the lower wafer are brought into contact with each other;
27 is an explanatory view showing a state in which an upper wafer and a lower wafer are joined;

Hereinafter, an embodiment of the present invention will be described. 1 is a plan view schematically showing the configuration of the bonding system 1 according to the present embodiment. Fig. 2 is a side view showing an outline of the internal structure of the bonding system 1. Fig.

In the bonding system 1, as shown in Fig. 3, for example, wafers WU and W L as two substrates are bonded. Hereinafter, the wafer disposed on the upper side will be referred to as "upper wafer W U " as the first substrate, and the wafer disposed on the lower side will be referred to as "lower wafer W L " as the second substrate. Also, as referred to as the upper wafer (W U) is a joint surface to be bonded "surface (W U1)", and "if the (W U2)", the surface opposite the surface with the art (W U1). Similarly, a bonding surface to which the lower wafer W L is bonded is referred to as a "surface W L1 ", and a surface opposite to the surface W L1 is referred to as a "back side (W L2 )". In the bonding system 1, the upper wafer W U and the lower wafer W L are joined to form a polymerized wafer W T as a polymerized substrate.

Joining system (1) is also for example a plurality of wafers to and from the outside as shown in 1 (W U, W L), a plurality of polymerization wafer (W T) each accommodating a cassette (C U, brought to be imported is C L, C T) Ex Ex station (2) and the wafer (W U, W L), polymerization wafer (W T), a processing station provided with a variety of processing units for performing predetermined processing with respect to the ( 3 are integrally connected to each other.

The loading / unloading station 2 is provided with a cassette mounting table 10. In the cassette mounting table 10, a plurality of, for example, four cassette mounting plates 11 are provided. The cassette mount plate 11 is arranged in a row in the X direction (vertical direction in Fig. 1) in the horizontal direction. In these cassette mounting plate 11, when the cassette (C U, C L, C T) to the outside of the bonded system (1) invoke Import can be mounted to the cassette (C U, C L, C T) . Thus, the fetch output station (2), there is a plurality of the upper wafer (W U), a plurality of the lower wafer (W L), a plurality of polymerization wafer (W T) configured to be held. Further, the number of cassette mount plates 11 is not limited to this embodiment, and can be determined arbitrarily. Further, one of the cassettes may be used for recovery of more wafers. That is, the cassette is capable of separating the wafers having abnormality in joining of the upper wafer W U and the lower wafer W L with other normal wafers W T due to various factors. In this embodiment, for receiving of a plurality of cassettes (C T), 1 of cassettes using a (C T) as the recovery of at least a wafer and the other cassette (C T) of the normal polymerization wafer (W T) of As shown in FIG.

In the loading / unloading station 2, a wafer transfer section 20 is provided adjacent to the cassette mounting table 10. The wafer transfer unit 22 is provided with a wafer transfer unit 22 that is movable on a transfer path 21 extending in the X direction. The wafer transfer device 22 is movable in the vertical direction and around the vertical axis (the? Direction) and is movable between the cassettes CU , C L and C T on the respective cassette mount plates 11, of the can conveying the wafer (W U, W L), polymerization wafer (W T) between the third processing block (G3) a transition device (50, 51).

The processing station 3 is provided with a plurality of processing blocks G1, G2 and G3, for example, having various devices. For example, a first processing block G1 is provided on the front side of the processing station 3 (on the side of the X direction in Fig. 1), and a back side of the processing station 3 A second processing block G2 is provided. A third processing block G3 is provided on the loading / unloading station 2 side (the Y direction side direction side in Fig. 1) of the processing station 3.

For example, in the first processing block G1, a surface modifying apparatus 30 for modifying the surfaces W U1 and W L1 of the wafers W U and W L is disposed. In the surface modification apparatus 30, for example, under a reduced-pressure atmosphere, oxygen gas as a process gas is excited to be plasmaized and ionized. The oxygen ion is irradiated on a surface (W U1, W L1), the surface (W U1, W L1) is a plasma treatment, it is reformed.

For example, the example second processing block (G2), for example, the wafer surface (W U1, W L1) to a surface (W U1, W L1) art with hydrophilic hwaham of (W U, W L) by pure The surface hydrophilic device 40 for cleaning and the bonding devices 41 for bonding the wafers WU and W L are arranged side by side in the Y direction in the horizontal direction in this order from the side of the carry-

Surface hydrophilization device (40), for example the wafer (W U, W L), the, art wafer (W U, W L) while rotating held by the spin chuck Pure water is supplied. Then, the supplied pure water is supplied to the surfaces W U1 and W L1 of the wafers W U and W L , To spread onto the surface (W U1, W L1) is hydrophilicity. The construction of the bonding apparatus 41 will be described later.

For example, in the third processing block G3, the transfer devices 50 and 51 of the wafers WU and W L and the polymerized wafer W T are sequentially arranged in two stages Is installed.

As shown in Fig. 1, a wafer transfer region 60 is formed in an area surrounded by the first processing block G1 to the third processing block G3. In the wafer transfer region 60, for example, a wafer transfer device 61 is disposed.

The wafer transfer device 61 has, for example, a transfer arm which is movable in the vertical direction (Z direction), the horizontal direction (Y direction, X direction) and the vertical axis. The wafer transfer device 61 moves within the wafer transfer region 60 to transfer the wafer W to the predetermined processing device G1 in the first processing block G1, the second processing block G2, and the third processing block G3, (W U , W L ) and the polymerized wafer (W T ).

In the above bonding system 1, a control section 70 is provided as shown in Fig. The control unit 70 is, for example, a computer and has a program storage unit (not shown). A program storage unit, there is a program for controlling the processing of the wafer (W U, W L), polymerization wafer (W T) of the bonded system (1) is stored. The program storage section also stores a program for controlling the operation of a driving system such as the above-described various processing apparatuses and carrying apparatuses to realize a wafer bonding process to be described later in the bonding system 1. [ The program may be stored in a computer readable storage medium H such as a computer readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto optical disk (MO) Which has been recorded in the storage medium H, may be installed in the control section 70 as well.

Next, the configuration of the above-described bonding apparatus 41 will be described. As shown in Fig. 4, the bonding apparatus 41 has a processing container 100 capable of sealing the inside thereof. The transfer port 101 of the wafer side in the carrying region 60 side of the processing vessel 100, the wafer (W U, W L), polymerization wafer (W T) is formed and opening and closing, the art transfer port (101) A shutter 102 is provided.

The inside of the processing vessel 100 is partitioned into a carrying region T1 and a processing region T2 by an inner wall 103. [ The above-described carry-in / out port 101 is formed on the side surface of the processing container 100 in the carry region T1. The wafer WU and W L and the transfer port 104 of the polymerized wafer W T are also formed in the inner wall 103.

X is the side of the forward direction of the carrying area (T1), the wafer (W U, W L), polymerization wafer (W T), the transition (110) for temporarily mounting is provided. The transitions 110 are formed in two stages, for example, so that any two of the wafers W U and W L and the polymerized wafers W T can be simultaneously mounted.

A wafer transport mechanism 111 is provided in the transport region T1. 4 and 5, the wafer transfer mechanism 111 has, for example, a transfer arm that can move in the vertical direction (Z direction), the horizontal direction (Y direction, X direction) and the vertical axis. Then, the wafer transport mechanism 111, the conveying area (T1), or in the conveying zone to transport the wafer (W U, W L), polymerization wafer (W T) between (T1) and the treatment zone (T2) have.

A position adjusting mechanism 120 for adjusting the orientation of the wafers WU and W L in the horizontal direction is provided on the X direction side of the carrying region T1. 6, the position adjusting mechanism 120 includes a holding portion 122 for holding and rotating the base 121 and the wafers WU and W L in a pin chuck manner and a holding portion 122 for holding the wafer W U , and W L ) of the notch portion. The pinch chucking method of the holding part 122 is the same as that of the pinch chucking method of the upper chuck 140 and the lower chuck 141 described later, and the description is omitted. The position adjusting mechanism 120 detects the positions of the notches of the wafers W U and W L by the detecting unit 123 while rotating the wafers W U and W L held by the holding unit 122 , And the position of the notch portion is adjusted to adjust the orientation of the wafers W U and W L in the horizontal direction.

Further, the conveying area (T1) is provided with a reversing mechanism 130 for reversing the front and rear surfaces of the upper wafer (W U) is provided, as shown in Figs. Tripping mechanism 130, and has a holding arm (131) for holding the upper wafer (W U), as shown in Figs. 7 to 9. The holding arm 131 is stretched in the horizontal direction (Y direction in Figs. 7 and 8). In addition, the retaining arm 131 has a holding member 132 for holding the upper wafer (W U) is provided in four places, for example. The holding member 132 is configured to be movable in the horizontal direction with respect to the holding arm 131 as shown in Fig. A notch 133 for holding the outer peripheral portion of the upper wafer W U is formed on the side surface of the holding member 132. Then, these holding member 132 can be maintained by using the cut-out 133 which is formed between the upper wafer (W U).

As shown in Figs. 7 to 9, the holding arm 131 is supported by a first driving unit 134 provided with, for example, a motor or the like. The holding arm 131 is rotatable around the horizontal axis by the first driving unit 134. [ The holding arm 131 is rotatable about the first driving portion 134 and movable in the horizontal direction (Y direction in Figs. 7 and 8). Below the first drive unit 134, a second drive unit 135 including, for example, a motor is provided. The first driving part 134 can be moved in the vertical direction along the support pillars 136 extending in the vertical direction by the second driving part 135. The upper wafer W U held by the holding member 132 can be rotated about the horizontal axis and moved in the vertical direction and the horizontal direction by the first driving unit 134 and the second driving unit 135 have. Further, the holding of the upper wafer held by the member (132) (W U), the first to rotate around the drive unit 134, to move between the upper chuck (140) to be described later from the position adjusting mechanism 120, have.

Treatment zone (T2), the Figure 4 and the upper wafer (W U) for Keeping the first holding portion upper chuck (140) as to adsorb at as shown in Figure 5 and, on the upper surface of the lower wafer (W L) And a lower chuck 141 serving as a second holding portion for holding and holding the chuck. The lower chuck 141 is disposed below the upper chuck 140 and is configured to be disposed opposite to the upper chuck 140. That is, the upper wafer W U held by the upper chuck 140 and the lower wafer W L held by the lower chuck 141 are opposed to each other.

4, 5, and 11, the upper chuck 140 is supported by an upper chuck supporter 150 provided above the upper chuck 140. As shown in FIG. The upper chuck supporter 150 is installed in a ceiling of the processing vessel 100. That is, the upper chuck 140 is fixed to the processing vessel 100 through the upper chuck supporter 150.

The upper chuck supporter 150 is provided with an upper image pickup unit 151 as a first image pickup unit for picking up a surface W L1 of the lower wafer W L held by the lower chuck 141. [ That is, the upper imaging unit 151 is provided adjacent to the upper chuck 140. As the upper image pickup unit 151, for example, a CCD camera is used. 12, the upper image pickup section 151 has a sensor 152 and a macro lens 153 and a microlens 154 connected to the sensor 152. [ The macro lens 153 has an imaging range of 6.4 mm x 4.8 mm and can capture a wide range, but the resolution is low. On the other hand, the micro lens 154 has an imaging range of 0.55 mm x 0.4 mm, and the imaging range is narrow, but the resolution is high.

4, 5, and 11, the lower chuck 141 is supported by a first lower chuck moving part 160 provided below the lower chuck 141. As shown in Fig. The first lower chuck moving section 160 is configured to move the lower chuck 141 in the horizontal direction (Y direction) as described later. The first lower chuck moving section 160 is configured to be movable in the vertical direction and rotatable about the vertical axis.

The first lower chuck moving section 160 is provided with a lower image pickup section 161 as a second image pickup section for picking up a surface W U1 of the upper wafer W U held by the upper chuck 140. That is, the lower imaging unit 161 is provided adjacent to the lower chuck 141. As the lower image pickup unit 161, for example, a CCD camera is used. Specifically, the lower imaging section 161 has a sensor 162 and a macro lens 163 and a microlens 164 connected to the sensor 162, as shown in Fig. Since the sensor 162, the macro lens 163 and the microlens 164 are the same as the sensor 152, the macro lens 153 and the microlens 154 in the upper image pickup section 151, It is omitted.

As shown in Figs. 4, 5 and 11, the first lower chuck moving section 160 is provided on the lower surface side of the first lower chuck moving section 160 and extends in the horizontal direction (Y direction) And is provided on a pair of rails 165 and 165. The first lower chuck moving part 160 is configured to be movable along the rails 165.

The pair of rails 165 and 165 are disposed on the second lower chuck moving portion 166. [ The second lower chuck moving portion 166 is provided on a pair of rails 167 and 167 extending in the horizontal direction (X direction) and provided on the lower side of the second lower chuck moving portion 166 . The second lower chuck moving portion 166 is configured to be movable along the rail 167, that is, to move the lower chuck 141 in the horizontal direction (X direction). The pair of rails 167 and 167 are disposed on a placement table 168 provided on the bottom surface of the processing container 100.

In the present embodiment, the first lower chuck moving section 160 and the second lower chuck moving section 166 constitute the moving mechanism of the present invention.

Next, the detailed configuration of the upper chuck 140 and the lower chuck 141 of the joining apparatus 41 will be described.

As shown in Figs. 13 and 14, the upper chuck 140 employs a pin chuck system. The upper chuck (140), at least when viewed from the top may have a body portion 170 having a larger diameter than the upper wafer (W U). A plurality of pins 171 are provided on the lower surface of the body portion 170 to contact the back surface W U2 of the upper wafer W U. An outer wall portion 172 for supporting an outer peripheral portion of the back surface W U2 of the upper wafer W U is provided on the lower surface of the main body portion 170. The outer wall portion 172 is provided on the outer side of the plurality of fins 171 in an annular shape.

When the main body unit 170 has, in the outer wall of the inner area of the block 172 (173) (hereinafter, which is called the suction area 173), the intake for the vacuum drawing the upper wafer (W U) A population 174 is formed. The suction port 174 is formed, for example, at two positions on the outer peripheral portion of the suction region 173. A suction pipe 175 provided inside the main body 170 is connected to the suction port 174. A vacuum pump 176 is connected to the suction pipe 175 through a joint.

The suction region 173 surrounded by the upper wafer WU , the body portion 170 and the outer wall portion 172 is evacuated from the suction port 174 to depressurize the suction region 173. At this time, since the external atmosphere of the suction area 173, the atmospheric pressure, the upper wafer (W U) is the top wafer (W U) in the suction region is pressed toward the (173), the upper chuck (140) by the atmospheric pressure by the pressure-minute Is adsorbed and held.

In this case, since the height of the plurality of fins 171 is uniform, the planarity of the lower surface of the upper chuck 140 can be reduced. Thus, the lower surface of the upper chuck 140 can be made flat (the planarity of the lower surface is made smaller), and distortion in the vertical direction of the upper wafer W U held by the upper chuck 140 can be suppressed. Since the back surface W U2 of the upper wafer W U is supported by the plurality of fins 171, when the upper wafer W U is released from vacuum by the upper chuck 140, W U are easily separated from the upper chuck 140.

A through hole 177 penetrating through the body portion 170 in the thickness direction is formed in the central portion of the body portion 170. The center portion of the main body portion 170 corresponds to the center portion of the upper wafer W U held by the upper chuck 140. The pushing pin 181 of the pushing member 180, which will be described later, is inserted through the through hole 177.

On the upper surface of the upper chuck 140, a pushing member 180 for pressing the center of the upper wafer W U is provided. The pushing member 180 has a cylinder structure and has a pushing pin 181 and an outer cylinder 182 serving as a guide when the pushing pin 181 ascends and descends. The push pin 181 is vertically movable through a through hole 177 by a driving unit (not shown) incorporating a motor, for example. Then, the pushing member 180 can be pressed by at junction below the wafer (W U, W L) which, abuts the central portion of the upper wafer center and the lower wafer (W L) of (W U).

As shown in Figs. 13 and 15, a pin chuck system is employed for the lower chuck 141 in the same manner as the upper chuck 140 is. The lower chuck 141 has a body portion 190 having a larger diameter than at least the lower wafer W L in plan view. A plurality of pins 191 are provided on the upper surface of the main body 190 to contact the back surface W L2 of the lower wafer W L. An outer wall portion 192 for supporting the outer peripheral portion of the back surface W L2 of the lower wafer W L is provided on the upper surface of the main body portion 190. The outer wall portion 192 is annularly provided on the outside of the plurality of fins 191.

The upper surface of the main body portion 190 is provided with a suction port 193 for evacuating the lower wafer W L in an area 193 (hereinafter also referred to as a suction area 193) A plurality of population 194 is formed. A suction pipe 195 provided in the main body 190 is connected to the suction port 194. Two suction tubes 195 are provided, for example. A vacuum pump 196 is connected to the suction pipe 195.

The suction region 193 surrounded by the lower wafer W L , the body portion 190 and the outer wall portion 192 is evacuated from the suction port 194 to depressurize the suction region 193. At this time, since the external atmosphere of the suction area 193 at atmospheric pressure, the lower wafer (W L), the lower wafer (W L), a pressed toward the suction area 193 by the atmospheric pressure by the pressure-minutes, the lower chuck 141 Is adsorbed and held.

In this case, since the height of the plurality of fins 191 is uniform, the flatness of the upper surface of the lower chuck 141 can be reduced. In addition, even when particles are present in the processing container 100, the interval between adjacent fins 191 is appropriate, so that the presence of particles on the upper surface of the lower chuck 141 can be suppressed. Thus, the upper surface of the lower chuck 141 can be made flat (the planarity of the upper surface is made smaller), and distortion in the vertical direction of the lower wafer W L held by the lower chuck 141 can be suppressed. Since the back surface W L2 of the lower wafer W L is supported by the plurality of fins 191 when the lower wafer W L is released from the vacuum by the lower chuck 141, W L is likely to fall off the lower chuck 141.

In the vicinity of the central portion of the main body portion 190, three through holes 197 penetrating the main body portion 190 in the thickness direction are formed at, for example, three places. The through hole 197 is provided with a lift pin provided below the first lower chuck moving part 160 to be inserted therethrough.

In the outer periphery of the body portion 190, a wafer (W U, W L), polymerization wafer (W T) is protruding from the lower chuck (141) or sliding guide for preventing dripping member 198 is installed, . The guide members 198 are provided at a plurality of positions, for example, at four positions on the outer peripheral portion of the main body portion 190 at regular intervals.

The operation of each part of the bonding apparatus 41 is controlled by the control unit 70 described above.

Next, a joining processing method of the wafers WU and W L performed using the bonding system 1 configured as described above will be described. Fig. 16 is a flowchart showing an example of the main process of such a wafer bonding process.

First, a cassette (C U), plurality of lower wafer cassette accommodating the (W L) (C L) and empty cassette (C T) receiving a plurality of the upper wafer (W U), fetch output station (2) And is mounted on a predetermined cassette mounting plate 11 of a cassette. Thereafter, the upper wafer W U in the cassette C U is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the third processing block G 3 of the processing station 3.

Then the upper wafer (W U) is on, it is transported to the surface modification apparatus 30 of the first processing block (G1) by the wafer transfer apparatus 61. In the surface modifying apparatus 30, the oxygen gas as the process gas is excited to be plasmaized and ionized under a predetermined reduced pressure atmosphere. The oxygen ion is irradiated on a surface (W U1) of the upper wafer (W U), the art surface (W U1) is a plasma treatment. Then, the surface W U1 of the upper wafer W U is modified (step S 1 in FIG. 16).

Next, the upper wafer W U is transferred to the surface hydrophilic device 40 of the second processing block G 2 by the wafer transfer device 61. The surface hydrophilization device 40, while rotating the upper wafer (W U) held by the spin chuck, and supplies the pure water onto the art upper wafer (W U). Then, the hydroxyl group on the surface (W U1) of the supplied pure water surface by spreading a phase (W U1), the surface modification device 30, the upper wafer (W U), modified according to the upper wafer (W U) (sila playing) is attached to the art that the surface (W U1) is hydrophilicity. Further, the surface W U1 of the upper wafer W U is cleaned by the pure water (step S 2 in FIG. 16).

Then the upper wafer (W U) is on, and conveyed to the bonding unit 41 in the second processing block (G2) by the wafer transfer apparatus 61. The upper wafer W U carried into the bonding apparatus 41 is transported to the position adjusting mechanism 120 by the wafer transport mechanism 111 via the transition 110. Then, the alignment of the upper wafer W U in the horizontal direction is adjusted by the position adjusting mechanism 120 (step S 3 in FIG. 16).

Thereafter, the upper wafer W U is transferred from the position adjusting mechanism 120 to the holding arm 131 of the reversing mechanism 130. Subsequently, by inverting the holding arm 131 in the carrying region T1, the front and back surfaces of the upper wafer W U are reversed (step S 4 in FIG. 16). That is, the surface W U1 of the upper wafer W U is directed downward.

Thereafter, the holding arm 131 of the reversing mechanism 130 rotates around the first driving part 134 and moves to the lower side of the upper chuck 140. Then, the upper wafer W U is transferred from the inversion mechanism 130 to the upper chuck 140. The top wafer (W U) is sucked and held is that if the (W U2) on the upper chuck (140) (step S5 in FIG. 16). Specifically, by operating the vacuum pump 176, the vacuum drawing the suction area 173 from the suction port 174, the top wafer (W U) is sucked and held on the upper chuck (140).

The processing of the lower wafer W L is performed subsequent to the upper wafer W U while the upper wafer W U is being processed in the above-described processes S 1 to S 5. First, the lower wafer W L in the cassette C L is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the processing station 3.

Subsequently, the lower wafer W L is transferred to the surface modification apparatus 30 by the wafer transfer apparatus 61, and the surface W L1 of the lower wafer W L is modified (step S6 in FIG. 16) . The modification of the surface W L1 of the lower wafer W L in step S6 is the same as that in the above-described step S1.

Thereafter, the lower wafer W L is transferred to the surface hydrophilic device 40 by the wafer transfer device 61 so that the surface W L1 of the lower wafer W L is hydrophilized, W L1 ) is cleaned (step S7 in Fig. 16). The hydrophilization and cleaning of the surface W L1 of the lower wafer W L in step S7 are the same as in step S2 described above.

Thereafter, the lower wafer W L is transferred to the bonding apparatus 41 by the wafer transfer apparatus 61. The lower wafer W L carried into the bonding apparatus 41 is transported to the position adjusting mechanism 120 by the wafer transport mechanism 111 via the transition 110. The position adjustment mechanism 120 adjusts the horizontal orientation of the lower wafer W L (step S8 in FIG. 16).

Thereafter, the lower wafer W L is transferred to the lower chuck 141 by the wafer transfer mechanism 111, and the back side W L2 thereof is sucked and held on the lower chuck 141 (step S9 in Fig. 16 ). More specifically, the vacuum pump 196 is operated to evacuate the suction region 193 from the suction port 194, so that the lower wafer W L is adsorbed and held on the lower chuck 141.

Next, as shown in Figs. 17 and 18, the horizontal position of the upper imaging section 151 and the lower imaging section 161 is adjusted (step S10 in Fig. 16). At this time, the lower chuck 141 is disposed such that its surface is located at the first height H1.

In step S10, the lower chuck 141 is moved by the first lower chuck moving part 160 and the second lower chuck moving part 166 so that the lower image pickup part 161 is positioned substantially below the upper image pickup part 151, In the horizontal direction (X direction and Y direction). A common target T is confirmed by the upper image pickup section 151 and the lower image pickup section 161 so that the horizontal position of the upper image pickup section 151 and the lower image pickup section 161 coincide with each other. The horizontal position of the light guide plate 161 is finely adjusted. Only the lower image pickup unit 161 is moved so that the horizontal position of the upper image pickup unit 151 and the lower image pickup unit 161 is appropriately adjusted Can be adjusted.

Next, an upper wafer (W U) and a lower held in the 19 to the upper chuck 140 and subjected to control of the horizontal position of the lower chuck 141, art upper chuck 140 as shown in Figure 22 The horizontal position of the lower wafer W L held by the chuck 141 is adjusted (steps S11 and S12 in Fig. 16). At this time, the lower chuck 141 is vertically moved by the first lower chuck moving part 160, and the lower chuck 141 is disposed such that its surface is located at the second height H2.

A plurality of predetermined reference points A1 to A3 are formed on the surface W U1 of the upper wafer W U and a plurality of predetermined points A 1 to A 3 are formed on the surface W L1 of the lower wafer W L , , For example, three reference points B1 to B3 are formed. Reference point A1, and the reference point on the outer peripheral part of the A3 and B1, B3 are each wafer (W U, W L), the reference point A2 and B2 is the reference point of the center of each wafer (W U, W L). As the reference points A1 to A3 and B1 to B3, for example, predetermined patterns formed on the wafers W L and W U are used, respectively.

In step S11, the lower chuck 141 is moved in the horizontal direction (X direction and Y direction) by the first lower chuck moving part 160 and the second lower chuck moving part 166, Three points on the outer peripheral portion of the surface W L1 of the lower wafer W L are picked up using the macro lens 153 of FIG. The controller 70 measures the horizontal position of three points based on the sensed image and calculates the horizontal position of the center of the surface W L1 of the lower wafer W L based on the measurement result do. Thereafter, the lower chuck 141 is moved in the horizontal direction to pick up a central portion (chip in the central portion) of the surface W L1 of the lower wafer W L. Subsequently, the lower chuck 141 is further moved in the horizontal direction to pick up a chip adjacent to the central chip. Then, the control unit 70 calculates the slope of the lower wafer W L based on the image of the chip adjacent to the center chip image. In this way it is possible to obtain the outline coordinates of the lower wafer (W L), by obtaining the inclination of the horizontal position and the lower wafer (W L) of the central portion of the lower wafer (W L). The horizontal position of the lower chuck 141 is roughly adjusted based on the rough coordinates of the lower wafer W L. Thus, the horizontal position of the upper wafer W U and the lower wafer W L is roughly adjusted.

The rough adjustment of the position in the horizontal direction in step S11 can be performed by at least the step S12 in which the upper imaging section 151 can pick up the reference points B1 to B3 of the lower wafer W L , unit 161 is performed in a location that is capturing an image of the reference point A1 to A3 of the upper wafer (W U).

Subsequently, in step S12, the lower chuck 141 is moved in the horizontal direction (X direction and Y direction) by the first lower chuck moving part 160 and the second lower chuck moving part 166, The reference points B1 to B3 of the surface W L1 of the lower wafer W L are sequentially picked up by using the microlenses 154 of the wafer W1. At the same time, the reference points A1 to A3 of the surface W U1 of the upper wafer W U are successively imaged using the microlenses 164 of the lower imaging unit 161. Further, 19 and 20 surface (W U1 of the lower wafer top wafer (W U) by also sensing the reference point B1 and with the lower sensing section 161 of the (W L) by the upper image sensing unit 151 21 and 22 illustrate a state in which the reference point B2 of the lower wafer W L is picked up by the upper pick-up section 151 and the lower pick-up section 161 picks up the pick- And the reference point A2 of the surface W U1 of the wafer W U is picked up. The photographed visible light image is outputted to the control section (70). Control unit 70 in, based on the visible light image taken at a visible light image and the bottom image capturing unit 161 is captured by the upper image sensing unit 151, the reference point A1 to A3 and the lower wafer of the upper wafer (W U) (W L The lower chuck 141 is moved by the first lower chuck moving part 160 and the second lower chuck moving part 166 at positions where the reference points B1 to B3 of the lower chuck moving part 163 coincide with each other. Thus, the horizontal position of the upper wafer W U and the lower wafer W L is finely adjusted. Since the upper chuck 140 is fixed to the processing vessel 100, only the lower chuck 141 is moved so that the horizontal position of the upper chuck 140 and the lower chuck 141 can be appropriately adjusted, The horizontal position of the upper wafer W U and the lower wafer W L can be appropriately adjusted.

The fine adjustment of the position in the horizontal direction in step S12 is performed by moving the lower chuck 141 in the horizontal direction (X direction and Y direction) and moving the lower chuck 141 to the first lower chuck moving part 160 And the orientation of the lower chuck 141 is also finely adjusted.

After that, as shown in Fig. 23 performed to adjust the vertical position of the upper chuck 140 and lower chuck 141, art upper wafer held by the upper chuck (140) (W U) and a lower chuck (141 ) carries out the adjustment of the vertical position of the lower wafer (W L) maintained (step S13 in FIG. 16) on. At this time, the lower chuck 141 is vertically moved by the first lower chuck moving part 160, and the lower chuck 141 is disposed such that its surface is located at the third height H3. At this time, the distance between the surface W L1 of the lower wafer W L and the surface W U1 of the upper wafer W U is a predetermined distance, for example, 50 μm to 200 μm. At this vertical position (third height H3), a bonding process of the upper wafer W U and the lower wafer W L is performed.

The vertical distance DELTA H (= H3-H1) from the above-described first height H1 to the third height H3 is set to be smaller than the vertical distance DELTA H Is set based on the focal length of the macro lens 153 (163). Specifically, the vertical direction distance DELTA H is within 50 mm.

Next, a bonding process of the upper wafer W U held by the upper chuck 140 and the lower wafer W L held by the lower chuck 141 is performed.

First, by lowering the pushing pin 181 of the pushing member 180 as shown in Figure 24, thereby forcing the art, while the central portion of the upper wafer (W U), lower the top wafer (W U). At this time, the pushing pin 181 is, in the art without the top wafer (W U) state the pushing pin 181 is 70㎛ moving load, which for instance is subjected to 200g. Then, the center of the upper wafer W U and the center of the lower wafer W L are abutted against each other by the pushing member 180 (step S 14 in FIG. 16). At this time, since the suction port 174 of the upper chuck (140) it is formed on the outer periphery of the suction region 173, even when pressing the central portion of the upper wafer (W U) by the pushing member 180, an upper chuck (140 The outer peripheral portion of the upper wafer W U can be held.

Then, bonding is started between the central portion of the upper wafer W U pressed and the central portion of the lower wafer W L (the thick line portion in FIG. 24). That is, since the upper wafer (W U) surface (W L1) of the surface (W U1) and the lower wafer (W L) is modified in the step S1, S6 each, first, the surface (W U1, W L1) To a van der Waals' forces (intermolecular force) is generated between, are joined to each other art surface (W U1, W L1). Further, between the top wafer (W U) of the surface (W U1) and the lower wafer (W L) surface (W L1) is a surface (W U1, W L1) because they are hydrophilic in the step S2, S7 each hydrophilic group is bonded to the hydrogen (intermolecular force) between the surface (W U1, W L1 is firmly connected.

25, the operation of the vacuum pump 176 is stopped with the pushing member 180 pressing the center portion of the upper wafer W U and the center portion of the lower wafer W L , The vacuuming of the upper wafer W U in the suction region 173 is stopped. Then, the upper wafer W U drops onto the lower wafer W L. At this time, since the back surface W U2 of the upper wafer W U is supported by the plurality of fins 171, when the vacuum of the upper wafer W U is released by the upper chuck 140, (W U ) is easily separated from the upper chuck 140. And toward the outer periphery from the center of the upper wafer (W U), to stop the evacuation of the upper wafer (W U), the upper wafer (W U) abuts sequentially fall to the lower wafer (W L), above The Van der Waals force between one surface (W U1 , W L1 ) and the bonding due to the hydrogen bonding are sequentially enlarged. In this way, as shown in FIG. 26, contact with the entire side surface (W L1) of the surface (W U1) and the lower wafer (W L) of the top wafer (W U), the upper wafer (W U) and a lower The wafer W L is bonded (step S15 in Fig. 16).

Thereafter, the pushing pin 181 of the pushing member 180 is raised to the upper chuck 140 as shown in Fig. Further, by stopping the operation of the vacuum pump (196), suction of the suction area 193 below the wafer to stop the evacuation, the lower wafer by a lower chuck (141) (W L) of (W L) of the . At this time, since the back surface W L2 of the lower wafer W L is supported by the plurality of fins 191, when the lower wafer W L is released from vacuum by the lower chuck 141, (W L ) is easily separated from the lower chuck 141.

The polymerized wafer W T to which the upper wafer W U and the lower wafer W L are joined is transferred to the transition device 51 by the wafer transfer device 61 and then transferred to the transfer device 51 And transferred to the cassette (C T ) of the predetermined cassette mounting plate (11) by the wafer transfer device (22). Thus, the joining process of the series of wafers WU and W L is completed.

The upper chuck 140 is fixed to the processing container 100 and the upper image pickup unit 151 is also fixed to the processing vessel 100. The upper chuck 140 and the upper image pickup unit 151 ) Does not move over time. That is, the reliability of the bonding apparatus 41 is improved. In step S10, only the lower imaging section 161 is moved, so that the upper imaging section 151 and the lower imaging section 161 are moved in the horizontal direction Can be appropriately adjusted. Since the upper chuck 140 is fixed to the processing vessel 100 in the steps S11 and S12 only the lower chuck 141 is moved so that the horizontal position of the upper chuck 140 and the lower chuck 141 So that the horizontal position of the upper wafer W U and the lower wafer W L can be appropriately adjusted. That is, the adjustment accuracy of the horizontal position of the upper wafer W U and the lower wafer W L can be improved. Thus, after the step S14 and step S15, has the joining process of the upper wafer (W U) and the lower wafer (W L) can be appropriately carried out.

Since the upper image pickup section 151 and the lower image pickup section 161 are provided with the macro lenses 153 and 163 and the microlenses 154 and 164 respectively, The directional position adjustment can be performed stepwise in steps S11 and S12. Therefore, it is possible to efficiently adjust the position of the upper chuck 140 and the lower chuck 141 in the horizontal direction, that is, to adjust the horizontal position of the upper wafer W U and the lower wafer W L.

The horizontal position adjustment of the upper image pickup unit 151 and the lower image pickup unit 161 in step S10 is performed at the first height H1 and the upper chuck 140 and the lower chuck in steps S11 and S12, the horizontal positioning of the section 141 is a second done at the height (H2), the bonding of the upper wafer (W U) and the lower wafer (W L) of the step S14 and S15 is carried out at a third height (H3) . In the present embodiment, the vertical distance DELTA H (= H3 - H1) from the first height H1 to the third height H3 is set to the upper image pickup section 151 (lower image pickup section 161) Is set based on the focal length of the macro lens 153 (163) in the vertical direction, specifically, the vertical direction distance H is within 50 mm. That is, the moving distance of the lower chuck 141 in the vertical direction is within 50 mm.

Here, when the upper imaging member (bridge camera) is moved as in the conventional case, a space in the vertical direction for moving the upper imaging member is required. Therefore, the distance from the first height H1 to the third height H3 The vertical direction distance DELTA H was required to be at least 70 mm or more.

In this respect, according to the present embodiment, since the upper imaging section 151 is fixed to the processing container 100 and does not move, the vertical direction distance H is at least the upper imaging section 151 (the lower imaging section 161) The focal length can be secured. Therefore, the vertical direction distance DELTA H can be suppressed to within 50 mm, and the vertical direction distance DELTA H can be suppressed to be smaller than the conventional one. That is, the vertical movement distance of the lower chuck 141 can be suppressed to be smaller than the conventional one. This makes it possible to suppress the position adjustment error of the lower chuck 141 that accompanies the movement of the lower chuck 141 and to adjust the horizontal position of the upper chuck 140 and the lower chuck 141 more appropriately .

In addition, since it is not necessary to move the upper imaging member (bridge camera) as in the prior art, it is possible to improve the throughput of the bonding process of the upper wafer W U and the lower wafer W L.

Further, since there is no need to move the upper imaging member (bridge camera) as in the prior art, the moving mechanism can be omitted, and the footprint of the bonding apparatus 41 can be reduced. Further, along with the omission of the moving mechanism, the manufacturing cost of the joining apparatus 41 can be reduced, and the power consumption in the joining apparatus 41 can also be reduced.

In addition, the bonding system 1, the bonding device 41. In addition, a wafer (W U, W L), the surface (W U1, W L1) to the modified surface modification device 30, the surface (W U1, W L1 of (W U1 , W L 1 ) is cleaned with the hydrophilic property of the wafer W (W U , W L ), the bonding of the wafers W U , W L in one system can be performed efficiently have. Therefore, the throughput of the wafer bonding process can be further improved.

The upper chuck 140 is fixed to the processing container 100 and the lower chuck 141 is moved in the horizontal direction and the vertical direction in the bonding apparatus 41 of the above embodiment, And the lower chuck 141 may be fixed to the processing container 100. In this case, However, it is preferable that the upper chuck 140 be fixed to the processing vessel 100 as in the above embodiment, because the movement mechanism becomes larger on the side of moving the upper chuck 140. [

In the bonding system 1 of the above embodiment, after the wafers WU and W L are bonded by the bonding apparatus 41, the bonded polymerized wafer W T is heated to a predetermined temperature ). By performing such a heat treatment on the polymerized wafer W T , the bonding interface can be more firmly bonded.

While the preferred embodiments of the present invention have been described with reference to the accompanying drawings, the present invention is not limited to these examples. It will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. The present invention is not limited to this example and various forms can be employed. The present invention can also be applied to the case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer, a mask reticle for a photomask, or the like.

1: bonding system
2: In / Out station
3: Processing station
30: Surface modifying device
40: Surface hydrophilization device
41:
61: Wafer transfer device
70:
100: Processing vessel
140: upper chuck
141: Lower chuck
151:
153: Macro lens
154: microlens
160: first lower chuck moving part
161:
163: Macro lens
164: microlens
166: second lower chuck moving part
T: Target
W U : upper wafer
W L : Lower wafer
W T : Polymerized wafer

Claims (10)

A bonding apparatus for bonding substrates to each other,
A processing container for receiving and bonding the first substrate and the second substrate,
A first holding unit fixed to the processing vessel in the processing vessel and holding the first substrate on a lower surface thereof,
A second holding section provided below the first holding section in the processing vessel and holding the second substrate on an upper surface thereof,
A moving mechanism for moving the second holding portion in a horizontal direction and a vertical direction,
A first image pickup section provided in the first holding section and configured to pick up an image of a surface of the second substrate held by the second holding section;
And a second holding section provided in the second holding section, for holding the first holding section,
. The method according to claim 1,
Wherein the first imaging section and the second imaging section each include a macro lens and a microlens. 3. The method according to claim 1 or 2,
The second holding portion
A first height at which adjustment of the horizontal position of the first imaging unit and the second imaging unit is performed,
A second height at which the horizontal position of the first holding portion and the second holding portion is adjusted,
The first substrate moves upward in a vertical direction stepwise to a third height at which the first substrate and the second substrate are bonded,
And a vertical distance from the first height to the third height is set based on a focal distance between the first imaging unit and the second imaging unit. The method of claim 3,
And a vertical distance from the first height to the third height is within 50 mm. A bonding system having a bonding apparatus,
A processing station having the bonding apparatus according to claim 1 or 2,
The first substrate, the second substrate, or a plurality of polymerized substrates to which the first substrate and the second substrate are bonded, each of which can carry the first substrate, the second substrate, or the polymerized substrate And a loading / unloading station,
The processing station comprises:
A surface modifying device for modifying a surface to which the first substrate or the second substrate is bonded,
A surface hydrophilizing device for hydrophilizing a surface of the first substrate or the second substrate modified by the surface modifying device;
And a transfer device for transferring the first substrate, the second substrate, or the polymerized substrate to the surface modification device, the surface hydrophilicization device, and the bonding device,
Wherein the bonding apparatus joins the first substrate and the second substrate, the surface of which has been hydrophilized by the surface hydrophilic device, to the second substrate. A bonding method for bonding substrates to each other using a bonding apparatus,
In the bonding apparatus,
A processing container for receiving and bonding the first substrate and the second substrate,
A first holding unit fixed to the processing vessel in the processing vessel and holding the first substrate on a lower surface thereof,
A second holding section provided below the first holding section in the processing vessel and holding the second substrate on an upper surface thereof,
A moving mechanism for moving the second holding portion in a horizontal direction and a vertical direction,
A first image pickup section provided in the first holding section and configured to pick up an image of a surface of the second substrate held by the second holding section;
And a second image sensing unit which is provided in the second holding unit and which images the surface of the first substrate held by the first holding unit,
The joining method may include:
A first step of moving the second holding part in a horizontal direction by the moving mechanism to adjust a horizontal position of the second imaging part,
Wherein the moving mechanism moves the second holding portion in the horizontal direction while imaging the surface of the second substrate held by the second holding portion by the first imaging portion and holding the surface of the second substrate held by the first holding portion A second step of capturing an image of the surface of the first substrate with the second imaging unit and adjusting a horizontal position of the second holding unit with the moving mechanism,
And a third step of joining the first substrate held by the first holding part and the second substrate held by the second holding part in such a manner as to face each other. The method according to claim 6,
Wherein the first imaging unit and the second imaging unit each include a macro lens and a microlens,
In the second step,
After the image of the surface of the second substrate is picked up using the macro lens of the first image pickup unit, the horizontal position of the second holding unit is adjusted by the moving mechanism,
After imaging the surface of the second substrate using the microlenses of the first imaging section and imaging the surface of the first substrate using the microlenses of the second imaging section, (2) A joining method for adjusting a horizontal position of a holding part. 8. The method according to claim 6 or 7,
Wherein the first step, the second step and the third step are carried out by moving the second holding portion in a stepwise vertical upward direction at a first height, a second height and a third height, respectively,
Wherein a vertical distance from the first height to the third height is set based on a focal distance between the first imaging unit and the second imaging unit. 9. The method of claim 8,
Wherein the vertical distance from the first height to the third height is within 50 mm. A computer-readable storage medium storing a program that operates on a computer of a control unit that controls the joining apparatus to execute the joining method according to claim 6 or 7 by a joining apparatus.
KR1020140079085A 2013-07-10 2014-06-26 Joining apparatus, joining system, joining method, and computer recording medium KR20150007214A (en)

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