TW202243093A - Method for quick positioning chips - Google Patents

Method for quick positioning chips Download PDF

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TW202243093A
TW202243093A TW110113795A TW110113795A TW202243093A TW 202243093 A TW202243093 A TW 202243093A TW 110113795 A TW110113795 A TW 110113795A TW 110113795 A TW110113795 A TW 110113795A TW 202243093 A TW202243093 A TW 202243093A
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die
target
axis
dies
target block
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TW110113795A
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TWI766646B (en
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盧彥豪
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梭特科技股份有限公司
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Abstract

A method for quick positioning chips includes the following steps: preparing, fixing, position adjusting and transferring. In the fixing step, the suction device sucks a periphery of the main target area by a negative pressure, and the pushing member is moved to the main target area. In the position adjusting step, the suction device moves the main target area by the negative pressure until the axis of the target chip is aligned with the axis of the chip placing area. In the transferring step, the pushing member pushes the target chip towards the base plate by the carrier film until the target chip is transferred on the chip placing area. Such that, the axis of the target chip is aligned with the axis of the chip placing area precisely without moving whole carrier film, and a moving mass of the carrier film when offsetting position is reduced, so the moving speed is fast.

Description

晶粒高速定位方法Die high-speed positioning method

本發明是有關一種晶粒定位方法,特別是一種透過負壓小範圍固定及移動主要目標區塊以使目標晶粒至定點的晶粒高速定位方法。The invention relates to a crystal grain positioning method, in particular to a high-speed grain positioning method for fixing and moving a main target block in a small range by negative pressure so that the target grain can reach a fixed point.

積體電路藉由大批方式,經過多道程序,製作在半導體晶圓上,晶圓進一步分割成複數晶粒。換言之,晶粒是以半導體材料製作而成未經封裝的一小塊積體電路本體。分割好的複數晶粒整齊貼附在一承載膜上,接著一承載框負責運送承載膜至一基板的上方,然後藉由至少一頂推件將承載膜的主要目標區塊內的至少一目標晶粒轉移至基板的至少一晶粒放置區,俾利進行後續加工程序。Integrated circuits are fabricated on semiconductor wafers through multiple procedures in a large number of ways, and the wafers are further divided into multiple crystal grains. In other words, a die is a small unpackaged integrated circuit body made of semiconductor material. A plurality of divided crystal grains are neatly attached on a carrier film, and then a carrier frame is responsible for transporting the carrier film to the top of a substrate, and then at least one target in the main target area of the carrier film is moved by at least one pusher The crystal grains are transferred to at least one grain placement area of the substrate, so as to facilitate subsequent processing procedures.

在晶粒轉移的過程中,因為頂推件的水平位置是固定的,所以必須移動整塊承載膜,令目標晶粒的一軸線與晶粒放置區的一軸線對齊,然後頂推件透過承載膜推動目標晶粒往靠近基板的方向移動,直至目標晶粒轉移至晶粒放置區為止。In the process of die transfer, because the horizontal position of the ejector is fixed, the entire carrier film must be moved so that the axis of the target die is aligned with the axis of the die placement area, and then the ejector passes through the carrier film. The film pushes the target die to move close to the substrate until the target die is transferred to the die placement area.

然而,習知技術具有以下數種問題:其一,移動整塊承載膜所需移動的質量相當大,移動速度十分緩慢;其二,目標晶粒的軸線難以與晶粒放置區的軸線對齊而有些許偏差,導致目標晶粒難以完全位於晶粒放置區中,進而影響到後續加工程序;其三,一旦有些晶粒排列參差不齊,上述兩種問題會變得更嚴重。However, the prior art has the following problems: one, the mass required to move the entire carrier film is quite large, and the moving speed is very slow; two, the axis of the target grain is difficult to align with the axis of the grain placement area. Some deviations make it difficult for the target grains to be completely located in the grain placement area, thereby affecting subsequent processing procedures; third, once some grains are arranged unevenly, the above two problems will become more serious.

本發明的主要目的在於提供一種晶粒高速定位方法,能夠先透過負壓小範圍固定主要目標區塊的周圍,再透過負壓移動主要目標區塊,使得目標晶粒的軸線能夠精準地對齊晶粒放置區的軸線,無須移動整塊承載膜,大幅減少補償位置時承載膜所需移動的質量,移動速度快。The main purpose of the present invention is to provide a high-speed die positioning method, which can fix the main target block through negative pressure in a small range, and then move the main target block through negative pressure, so that the axis of the target die can be accurately aligned with the die. The axis of the particle placement area does not need to move the entire carrier film, which greatly reduces the mass that the carrier film needs to move when the position is compensated, and the moving speed is fast.

為了達成前述的目的,本發明提供一種晶粒高速定位方法,包括下列步驟:In order to achieve the aforementioned purpose, the present invention provides a method for high-speed positioning of crystal grains, comprising the following steps:

準備步驟,一承載膜的一第一表面朝向一吸附裝置及至少一頂推件,承載膜的一第二表面朝向一基板並且具有複數晶粒,承載膜依據該等晶粒的數量區隔成複數區塊,其中一個區塊界定為一主要目標區塊,其餘區塊界定為複數其他目標區塊,主要目標區塊內的複數晶粒的至少一者界定為至少一目標晶粒,基板具有至少一晶粒放置區,吸附裝置對準主要目標區塊的周圍,至少一目標晶粒的一軸線與至少一晶粒放置區的一軸線錯開。In the preparatory step, a first surface of a carrier film faces a suction device and at least one pusher, a second surface of the carrier film faces a substrate and has a plurality of crystal grains, and the carrier film is divided into A plurality of blocks, wherein one block is defined as a main target block, and the remaining blocks are defined as a plurality of other target blocks, at least one of the plurality of dies in the main target block is defined as at least one target die, and the substrate has At least one die placement area, the adsorption device is aimed at the periphery of the main target block, and an axis of the at least one target die is deviated from an axis of the at least one die placement area.

固定步驟,吸附裝置移動至主要目標區塊的周圍並且藉由一負壓吸附主要目標區塊的周圍,至少一頂推件移動至主要目標區塊。In the fixing step, the suction device moves to the surrounding of the main target block and absorbs the surrounding of the main target block by a negative pressure, and at least one pushing member moves to the main target block.

位置調整步驟,吸附裝置藉由負壓移動主要目標區塊,直至至少一目標晶粒的軸線與至少一晶粒放置區的軸線對齊為止,吸附裝置停止移動。In the position adjustment step, the adsorption device moves the main target block by negative pressure until the axis of at least one target die is aligned with the axis of at least one die placement area, and the adsorption device stops moving.

轉移步驟,至少一頂推件透過承載膜推動至少一目標晶粒往靠近基板的方向移動,直至至少一目標晶粒轉移至至少一晶粒放置區為止。In the transferring step, at least one pushing member pushes at least one target die to move towards the substrate through the carrying film until the at least one target die is transferred to at least one die placement area.

在一些實施例中,在準備步驟中,承載膜的第一表面朝向一頂推件,主要目標區塊內的複數晶粒的其中之一界定為一目標晶粒,基板具有一晶粒放置區,目標晶粒的軸線與晶粒放置區的軸線錯開;其中,在固定步驟中,頂推件移動至主要目標區塊;其中,在位置調整步驟中,吸附裝置藉由負壓移動主要目標區塊,直至目標晶粒的軸線與晶粒放置區的軸線對齊為止;以及其中,在轉移步驟中,頂推件透過承載膜推動目標晶粒往靠近基板的方向移動,直至目標晶粒轉移至晶粒放置區為止。In some embodiments, in the preparation step, the first surface of the carrier film faces a pusher, one of the plurality of dies in the main target area is defined as a target die, and the substrate has a die placement area , the axis of the target grain and the axis of the grain placement area are staggered; wherein, in the fixing step, the pusher moves to the main target area; wherein, in the position adjustment step, the adsorption device moves the main target area by negative pressure Block until the axis of the target die is aligned with the axis of the die placement area; and wherein, in the transfer step, the pusher pushes the target die through the carrier film to move towards the direction close to the substrate until the target die is transferred to the die until the grain storage area.

較佳地,在準備步驟中,主要目標區塊內的複數晶粒排列整齊或參差不齊。Preferably, in the preparation step, the plurality of dies in the main target block are arranged neatly or irregularly.

在一些實施例中,在準備步驟中,承載膜的第一表面朝向複數頂推件,主要目標區塊內的複數晶粒排列整齊,主要目標區塊內的複數晶粒界定為複數目標晶粒,基板具有複數晶粒放置區,該等目標晶粒的該等軸線分別與該等晶粒放置區的該等軸線錯開;其中,在固定步驟中,該等頂推件移動至主要目標區塊;以及其中,在位置調整步驟中,吸附裝置藉由負壓移動主要目標區塊,直至該等目標晶粒的該等軸線分別與該等晶粒放置區的該等軸線對齊為止。In some embodiments, in the preparation step, the first surface of the carrier film faces the plurality of pushers, the plurality of dies in the main target area are aligned, and the plurality of dies in the main target area are defined as the plurality of target dies , the substrate has a plurality of die placement areas, the axes of the target dies are respectively staggered from the axes of the die placement areas; wherein, in the fixing step, the pushers move to the main target block and wherein, in the position adjustment step, the adsorption device moves the main target block by negative pressure until the axes of the target dies are respectively aligned with the axes of the die placement regions.

較佳地,在轉移步驟中,該等頂推件分別透過承載膜推動該等目標晶粒往靠近基板的方向移動,直至該等目標晶粒依序或一起轉移至該等晶粒放置區為止。Preferably, in the transfer step, the pushing members respectively push the target dies to move towards the substrate through the carrier film until the target dies are transferred to the die placement areas sequentially or together .

在一些實施例中,在準備步驟中,承載膜的第一表面朝向複數頂推件,主要目標區塊內的複數晶粒排列參差不齊,主要目標區塊內的複數晶粒界定為複數目標晶粒,基板具有複數晶粒放置區,該等目標晶粒的該等軸線分別與該等晶粒放置區的該等軸線錯開;其中,在固定步驟中,該等頂推件移動至主要目標區塊;其中,在位置調整步驟中,吸附裝置藉由負壓移動主要目標區塊,直至該等目標晶粒的其中之一的軸線與該等晶粒放置區的其中之一的軸線對齊為止;其中,在轉移步驟中,該等頂推件的其中之一透過承載膜推動該等目標晶粒的其中之一往靠近基板的方向移動,直至該等目標晶粒的其中之一轉移至該等晶粒放置區的其中之一為止;以及其中,反覆進行位置調整步驟和轉移步驟,直至該等目標晶粒依序轉移至該等晶粒放置區為止。In some embodiments, in the preparation step, the first surface of the carrier film faces the plurality of pushers, the plurality of dies in the main target area are arranged unevenly, and the plurality of dies in the main target area are defined as the plurality of targets Die, the substrate has a plurality of die placement areas, the axes of the target dies are respectively staggered from the axes of the die placement areas; wherein, in the fixing step, the pushers move to the main target block; wherein, in the position adjustment step, the adsorption device moves the main target block by negative pressure until the axis of one of the target dies is aligned with the axis of one of the die placement regions ; Wherein, in the transfer step, one of the pushing members pushes one of the target dies through the carrier film to move towards the direction close to the substrate until one of the target dies is transferred to the until one of the die placement areas; and wherein the position adjustment step and the transfer step are repeated until the target dies are sequentially transferred to the die placement areas.

在一些實施例中,在固定步驟中,一影像擷取裝置擷取至少一目標晶粒、至少一頂推件和至少一晶粒放置區的一影像,以獲得一第一影像資訊,並且將第一影像資訊傳送至一控制裝置,控制裝置根據第一影像資訊判斷出至少一目標晶粒的軸線與至少一晶粒放置區的軸線之間的一間距及一方位,以獲得一調整訊息;以及其中,在位置調整步驟中,控制裝置根據調整訊息控制吸附裝置藉由負壓移動主要目標區塊,直至至少一目標晶粒的軸線與至少一晶粒放置區的軸線對齊為止,控制裝置控制吸附裝置停止移動,並且進一步開始執行轉移步驟,使得控制裝置進一步控制至少一頂推件往承載膜的方向移動。In some embodiments, in the fixing step, an image capture device captures an image of at least one target die, at least one pusher and at least one die placement area to obtain a first image information, and The first image information is sent to a control device, and the control device judges a distance and an orientation between the axis of at least one target die and the axis of at least one die placement area according to the first image information, so as to obtain an adjustment message; And wherein, in the position adjustment step, the control device controls the adsorption device to move the main target block by negative pressure according to the adjustment information until the axis of at least one target die is aligned with the axis of at least one die placement area, and the control device controls The adsorption device stops moving, and further starts to execute the transfer step, so that the control device further controls at least one pushing member to move toward the direction of the film.

較佳地,在位置調整步驟中,在主要目標區塊內的複數晶粒沿著承載膜的第二表面移動的過程中,影像擷取裝置擷取至少一目標晶粒、至少一頂推件和至少一晶粒放置區的一影像,以獲得一第二影像資訊,並且將第二影像資訊傳送至控制裝置,控制裝置根據第二影像資訊判斷出至少一目標晶粒的軸線是否與至少一晶粒放置區的軸線對齊;其中,當控制裝置根據第二影像資訊判斷出至少一目標晶粒的軸線與至少一晶粒放置區的軸線對齊時,控制裝置控制吸附裝置停止移動,並且進一步開始執行轉移步驟,使得控制裝置進一步控制至少一頂推件往承載膜的方向移動;以及其中,當控制裝置根據第二影像資訊判斷出至少一目標晶粒的軸線尚未與至少一晶粒放置區的軸線對齊時,控制裝置根據第二影像資訊判斷出至少一目標晶粒的軸線與至少一晶粒放置區的軸線之間的一間距及一方位,以獲得一校正訊息,控制裝置根據校正訊息控制吸附裝置藉由負壓移動主要目標區塊,直至至少一目標晶粒的軸線與至少一晶粒放置區的軸線對齊為止,控制裝置控制吸附裝置停止移動,並且進一步開始執行轉移步驟,使得控制裝置進一步控制至少一頂推件往承載膜的方向移動。Preferably, in the position adjustment step, during the movement of the plurality of dies in the main target block along the second surface of the carrier film, the image capture device captures at least one target die, at least one pusher and an image of at least one die placement area to obtain a second image information, and transmit the second image information to the control device, and the control device judges whether the axis of at least one target die is consistent with at least one The axes of the die placement area are aligned; wherein, when the control device determines that the axis of at least one target die is aligned with the axis of at least one die placement area according to the second image information, the control device controls the adsorption device to stop moving, and further starts Executing the transfer step, so that the control device further controls at least one push member to move toward the direction of the carrier film; and wherein, when the control device determines that the axis of at least one target die has not been aligned with the at least one die placement area according to the second image information When the axes are aligned, the control device judges a distance and an orientation between the axis of at least one target die and the axis of at least one die placement area according to the second image information to obtain a correction message, and the control device controls the The adsorption device moves the main target block by negative pressure until the axis of at least one target grain is aligned with the axis of at least one die placement area, the control device controls the adsorption device to stop moving, and further starts to perform the transfer step, so that the control device Further controlling at least one push member to move towards the direction of carrying the film.

在一些實施例中,在準備步驟中,至少一頂推件的一軸線對準至少一晶粒放置區的軸線;以及其中,在位置調整步驟中,吸附裝置藉由負壓移動主要目標區塊,直至至少一目標晶粒的軸線同時與至少一頂推件的軸線以及至少一晶粒放置區的軸線對齊為止,吸附裝置停止移動。In some embodiments, in the preparation step, an axis of at least one ejector is aligned with an axis of at least one die placement area; and wherein, in the position adjustment step, the suction device moves the main target area by negative pressure , until the axis of at least one target die is aligned with the axis of at least one pusher and the axis of at least one die placement area at the same time, the adsorption device stops moving.

在一些實施例中,在轉移步驟之後更包括轉換目標步驟,吸附裝置停止藉由負壓吸附主要目標區塊的周圍,主要目標區塊內的複數晶粒的至少另一者界定為至少另一目標晶粒,移動整塊承載膜和該基板,直至至少另一目標晶粒的一軸線與至少另一晶粒放置區的一軸線對齊為止;其中,在轉換目標步驟結束之後接著進行轉移步驟;以及其中,反覆進行轉換目標步驟和轉移步驟,直至主要目標區塊內的全部晶粒轉移至基板為止。In some embodiments, after the transfer step, a step of converting the target is further included, the adsorption device stops absorbing the surroundings of the main target block by negative pressure, at least another one of the plurality of crystal grains in the main target block is defined as at least another the target die, moving the entire carrier film and the substrate until an axis of at least another target die is aligned with an axis of at least another die placement area; wherein the transferring step is performed after the step of converting the target; And wherein, the step of converting the target and the step of transferring are repeated until all the dies in the main target block are transferred to the substrate.

本發明的功效在於,本發明的晶粒高速定位方法能夠先透過負壓小範圍固定主要目標區塊的周圍,再透過負壓移動主要目標區塊,使得目標晶粒的軸線能夠精準地對齊晶粒放置區的軸線,無須移動整塊承載膜,大幅減少補償位置時承載膜所需移動的質量,移動速度快。The effect of the present invention is that the high-speed positioning method of the present invention can fix the main target area around the main target area through the negative pressure, and then move the main target area through the negative pressure, so that the axis of the target grain can be accurately aligned with the crystal grain. The axis of the particle placement area does not need to move the entire carrier film, which greatly reduces the mass that the carrier film needs to move when the position is compensated, and the moving speed is fast.

以下配合圖式及元件符號對本發明的實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。The implementation of the present invention will be described in more detail below with reference to the drawings and reference symbols, so that those skilled in the art can implement it after studying this specification.

請參閱圖1至圖10,本發明提供一種晶粒高速定位方法,包括下列步驟:Please refer to Fig. 1 to Fig. 10, the present invention provides a kind of grain high-speed positioning method, comprises the following steps:

準備步驟S1,如圖1及圖2A至圖2E所示,一承載膜10的一第一表面11朝向一吸附裝置20及一頂推件30,承載膜10的一第二表面12朝向一基板40並且具有複數晶粒50,承載膜10依據該等晶粒50的數量區隔成複數區塊,其中一個區塊界定為一主要目標區塊13,其餘區塊界定為複數其他目標區塊14,主要目標區塊13內的複數晶粒50排列整齊,主要目標區塊13內的複數晶粒50的其中之一界定為一目標晶粒51。基板40具有一晶粒放置區41。吸附裝置20對準主要目標區塊13的周圍。頂推件30的一軸線31對準晶粒放置區41的一軸線411,目標晶粒51的一軸線511同時與頂推件30的軸線31以及晶粒放置區41的一軸線411錯開。Preparation step S1, as shown in FIG. 1 and FIG. 2A to FIG. 2E, a first surface 11 of a carrier film 10 faces a suction device 20 and a push member 30, and a second surface 12 of the carrier film 10 faces a substrate 40 and has a plurality of crystal grains 50, the carrier film 10 is divided into a plurality of blocks according to the number of these crystal grains 50, wherein one block is defined as a main target block 13, and the remaining blocks are defined as a plurality of other target blocks 14 , the plurality of dies 50 in the main target block 13 are arranged in order, and one of the plurality of dies 50 in the main target block 13 is defined as a target die 51 . The substrate 40 has a die placement area 41 . The adsorption device 20 is aimed at the periphery of the main target block 13 . An axis 31 of the ejector 30 is aligned with an axis 411 of the die placement area 41 , and an axis 511 of the target die 51 is deviated from the axis 31 of the ejector 30 and the axis 411 of the die placement area 41 .

更明確地說,承載膜10的兩端分別位於一承載框90上,二夾具(圖未示)夾住承載框90,一控制裝置80控制承載框90移動整塊承載膜10,直至吸附裝置20對準主要目標區塊13的周圍為止。More specifically, the two ends of the carrier film 10 are respectively located on a carrier frame 90, two clamps (not shown) clamp the carrier frame 90, and a control device 80 controls the carrier frame 90 to move the entire carrier film 10 until the adsorption device 20 until the periphery of the main target block 13 is aligned.

較佳地,如圖2C、圖3及圖4所示,吸附裝置20呈環狀以形成一軸孔21並且開設複數氣孔22,該等氣孔22連接一真空裝置60,頂推件30可移動地位於軸孔21中。如圖2E及圖4所示,一影像擷取裝置70位於基板40相對於承載膜10的一側。Preferably, as shown in Fig. 2C, Fig. 3 and Fig. 4, the adsorption device 20 is annular to form a shaft hole 21 and a plurality of air holes 22 are opened, and these air holes 22 are connected to a vacuum device 60, and the pusher 30 is movable Located in the shaft hole 21. As shown in FIG. 2E and FIG. 4 , an image capture device 70 is located on a side of the substrate 40 opposite to the carrier film 10 .

固定步驟S2,如圖1及圖5所示,一控制裝置80控制吸附裝置20移動至主要目標區塊13的周圍,真空裝置60對該等氣孔22抽氣以產生真空並且提供一負壓601,吸附裝置20藉由負壓601吸附主要目標區塊13的周圍,控制裝置80控制頂推件30移動至主要目標區塊13。如圖5至圖7所示,影像擷取裝置70擷取目標晶粒51、頂推件30和晶粒放置區41的一影像,以獲得一第一影像資訊71,並且將第一影像資訊71傳送至控制裝置80,控制裝置80根據第一影像資訊71判斷出目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411之間的一間距及一方位,以獲得一調整訊息81。Fixing step S2, as shown in Figures 1 and 5, a control device 80 controls the adsorption device 20 to move to the periphery of the main target block 13, and the vacuum device 60 pumps air to the air holes 22 to generate a vacuum and provide a negative pressure 601 , the adsorption device 20 adsorbs around the main target block 13 through the negative pressure 601 , and the control device 80 controls the pusher 30 to move to the main target block 13 . As shown in FIGS. 5 to 7 , the image capture device 70 captures an image of the target die 51, the pusher 30 and the die placement area 41 to obtain a first image information 71, and the first image information 71 is transmitted to the control device 80, and the control device 80 judges a distance and a distance between the axis 511 of the target die 51 and the axis 31 of the pusher 30 and the axis 411 of the die placement area 41 according to the first image information 71. orientation to obtain an adjustment message 81 .

位置調整步驟S3,如圖1、圖8A和圖8B所示,控制裝置80根據調整訊息81控制吸附裝置20藉由負壓601移動主要目標區塊13,直至目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊為止,控制裝置80控制吸附裝置20停止移動。進一步地說,如圖9所示,在主要目標區塊13內的複數晶粒50沿著承載膜10的第二表面12移動的過程中,影像擷取裝置70擷取目標晶粒51、頂推件30和晶粒放置區41的一影像,以獲得一第二影像資訊72,並且將第二影像資訊72傳送至控制裝置80,控制裝置80根據第二影像資訊72判斷出目標晶粒51的軸線511是否同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊。當控制裝置80根據第二影像資訊72判斷出目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊時,控制裝置80控制吸附裝置20停止移動。當控制裝置80根據第二影像資訊72判斷出目標晶粒51的軸線511尚未同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊時,控制裝置80根據第二影像資訊72判斷出目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411之間的一間距及一方位,以獲得一校正訊息82。控制裝置80根據校正訊息82控制吸附裝置20負壓601移動主要目標區塊13,直至目標晶粒51的軸線511同時與頂推件30的軸線31以及晶粒放置區41的軸線411對齊為止。Position adjustment step S3, as shown in FIG. 1 , FIG. 8A and FIG. 8B , the control device 80 controls the adsorption device 20 to move the main target block 13 by the negative pressure 601 according to the adjustment message 81 until the axis 511 of the target grain 51 coincides with the axis 511 at the same time. The control device 80 controls the suction device 20 to stop moving until the axis 31 of the pushing member 30 and the axis 411 of the die placement area 41 are aligned. Further, as shown in FIG. 9, during the movement of the plurality of dies 50 in the main target block 13 along the second surface 12 of the carrier film 10, the image capture device 70 captures the target dies 51, top An image of the push piece 30 and the die placement area 41 to obtain a second image information 72, and transmit the second image information 72 to the control device 80, and the control device 80 judges the target die 51 according to the second image information 72 Whether the axis 511 of the pusher 30 is aligned with the axis 31 of the pusher 30 and the axis 411 of the die placement area 41 at the same time. When the control device 80 determines that the axis 511 of the target die 51 is aligned with the axis 31 of the ejector 30 and the axis 411 of the die placement area 41 according to the second image information 72 , the control device 80 controls the adsorption device 20 to stop moving. When the control device 80 judges according to the second image information 72 that the axis 511 of the target die 51 has not been aligned with the axis 31 of the ejector 30 and the axis 411 of the die placement area 41 at the same time, the control device 80 according to the second image information 72 A distance and an orientation between the axis 511 of the target die 51 and the axis 31 of the pusher 30 and the axis 411 of the die placement area 41 are determined simultaneously to obtain a correction message 82 . The control device 80 controls the negative pressure 601 of the adsorption device 20 to move the main target block 13 according to the correction message 82 until the axis 511 of the target die 51 is aligned with the axis 31 of the ejector 30 and the axis 411 of the die placement area 41 at the same time.

轉移步驟S4,如圖1及圖10所示,控制裝置80控制頂推件30往承載膜10的方向移動,頂推件30透過承載膜10推動目標晶粒51往靠近基板40的方向移動,直至目標晶粒51轉移至晶粒放置區41為止。Transfer step S4, as shown in FIG. 1 and FIG. 10 , the control device 80 controls the pusher 30 to move toward the direction of the carrier film 10, and the pusher 30 pushes the target die 51 to move toward the direction close to the substrate 40 through the carrier film 10, until the target die 51 is transferred to the die placement area 41 .

進一步地說,如圖2A至圖2E所示,在尚未進行本發明的方法以前,在準備步驟S1中,吸附裝置20和頂推件30並沒有接觸承載膜10的第一表面11,因此如圖5所示,在固定步驟S2中,控制裝置80需先控制吸附裝置20和頂推件30沿著一垂直方向移動至承載膜10的第一表面11。Further, as shown in FIGS. 2A to 2E, before the method of the present invention is carried out, in the preparatory step S1, the adsorption device 20 and the push member 30 do not contact the first surface 11 of the carrier film 10, so as As shown in FIG. 5 , in the fixing step S2 , the control device 80 needs to firstly control the adsorption device 20 and the pushing member 30 to move to the first surface 11 of the carrier film 10 along a vertical direction.

反覆進行準備步驟S1、固定步驟S2、位置調整步驟S3和轉移步驟S4,直至第一個主要目標區塊13上的全部晶粒50轉移至複數晶粒放置區41為止。在第一個主要目標區塊13上的全部晶粒50轉移至該等晶粒放置區41以後,其他目標區塊14的其中之一被選定為下一個主要目標區塊13,此時重新回到準備步驟S1,吸附裝置20和頂推件30則保持抵靠在承載膜10的第一表面11。在固定步驟S2中,吸附裝置20和頂推件30移動至下一個主要目標區塊13的方式有兩種:其一,承載膜10保持不動,控制裝置80控制吸附裝置20和頂推件30沿著承載膜10的第一表面11直接移動至下一個主要目標區塊13;其二,吸附裝置20和頂推件30保持不動,控制裝置80控制承載膜10移動,使得吸附裝置20和頂推件30間接移動至下一個主要目標區塊13。後續的位置調整步驟S3和轉移步驟S4則如前所述。The preparation step S1, the fixing step S2, the position adjustment step S3 and the transfer step S4 are repeated until all the dies 50 on the first main target block 13 are transferred to the plurality of die placement areas 41. After all the dies 50 on the first main target block 13 are transferred to these die placement areas 41, one of the other target blocks 14 is selected as the next main target block 13, and at this time, return to Up to the preparation step S1 , the adsorption device 20 and the pushing member 30 are kept against the first surface 11 of the carrier film 10 . In the fixing step S2, there are two ways for the adsorption device 20 and the pusher 30 to move to the next main target block 13: first, the carrier film 10 remains still, and the control device 80 controls the adsorption device 20 and the pusher 30 Move directly to the next main target block 13 along the first surface 11 of the carrier film 10; secondly, the adsorption device 20 and the pusher 30 remain motionless, and the control device 80 controls the carrier film 10 to move, so that the adsorption device 20 and the ejector The pusher 30 moves indirectly to the next main target block 13 . The subsequent position adjustment step S3 and transfer step S4 are as described above.

在所有晶粒50都轉移至基板40以後,控制裝置80控制吸附裝置20和頂推件30遠離承載膜10。After all the dies 50 are transferred to the substrate 40 , the control device 80 controls the adsorption device 20 and the pusher 30 to move away from the carrier film 10 .

請參閱圖11,圖11是本發明的第一實施例的影像擷取裝置70的位置改變的示意圖。影像擷取裝置70的位置亦可改成位於吸附裝置20和頂推件30相對於承載膜10的一側。Please refer to FIG. 11 . FIG. 11 is a schematic diagram of the position change of the image capture device 70 according to the first embodiment of the present invention. The position of the image capture device 70 can also be changed to be located on a side of the adsorption device 20 and the pushing member 30 relative to the carrier film 10 .

值得一提的是,在第一實施例的準備步驟S1中,即使主要目標區塊13內的複數晶粒50排列參差不齊(圖未示),亦可藉由第一實施例的固定步驟S2、位置調整步驟S3和轉移步驟S4完成將目標晶粒51轉移至晶粒放置區41的目的。It is worth mentioning that in the preparation step S1 of the first embodiment, even if the arrangement of the plurality of dies 50 in the main target block 13 is uneven (not shown), the fixing step of the first embodiment can also S2 , the position adjustment step S3 and the transfer step S4 accomplish the purpose of transferring the target die 51 to the die placement area 41 .

另外,在其他實施例的準備步驟S1中,頂推件30的軸線31亦可與晶粒放置區41的軸線411錯開。因此,在位置調整步驟S3中,吸附裝置20藉由負壓移動主要目標區塊13,直至目標晶粒51的軸線511與晶粒放置區41的軸線411對齊為止,吸附裝置20停止移動。In addition, in the preparation step S1 of other embodiments, the axis 31 of the pushing member 30 may also be offset from the axis 411 of the die placement area 41 . Therefore, in the position adjustment step S3 , the adsorption device 20 moves the main target block 13 by negative pressure until the axis 511 of the target die 51 is aligned with the axis 411 of the die placement area 41 , and then the adsorption device 20 stops moving.

請參閱圖12至圖16,第二實施例與第一實施例的差異在於:如圖12所示,在準備步驟S1中,承載膜10的第一表面11朝向複數頂推件30,主要目標區塊13內的複數晶粒50排列整齊,主要目標區塊13內的複數晶粒50界定為複數目標晶粒51,基板40具有複數晶粒放置區41,該等頂推件30的該等軸線31分別對準該等晶粒放置區41的該等軸線411,該等目標晶粒51的該等軸線511分別同時與該等頂推件30的該等軸線31以及該等晶粒放置區41的該等軸線411錯開。如圖13及圖14所示,在固定步驟S2中,控制裝置80控制該等頂推件30移動至主要目標區塊13。如圖6及圖15所示,在位置調整步驟S3中,控制裝置80根據調整訊息81控制吸附裝置20藉由負壓601移動主要目標區塊13,直至該等目標晶粒51的該等軸線511分別同時與該等頂推件30的該等軸線31以及該等晶粒放置區41的該等軸線411對齊為止。如圖16A至圖16E所示,在轉移步驟S4中,該等頂推件30依序透過承載膜10推動該等目標晶粒51往靠近基板40的方向移動,直至該等目標晶粒51依序轉移至該等晶粒放置區41為止。換言之,控制裝置80亦可一次控制一個頂推件30藉由承載膜10推動一個目標晶粒51。Please refer to Fig. 12 to Fig. 16, the difference between the second embodiment and the first embodiment is that: as shown in Fig. The plurality of dies 50 in the block 13 are arranged neatly, the plurality of dies 50 in the main target block 13 are defined as a plurality of target dies 51, the substrate 40 has a plurality of die placement areas 41, and the pushers 30 of the The axes 31 are respectively aligned with the axes 411 of the die placement areas 41, and the axes 511 of the target dies 51 are respectively aligned with the axes 31 of the pushing members 30 and the die placement areas respectively. The equiaxes 411 of 41 are staggered. As shown in FIGS. 13 and 14 , in the fixing step S2 , the control device 80 controls the pushers 30 to move to the main target block 13 . As shown in FIG. 6 and FIG. 15 , in the position adjustment step S3, the control device 80 controls the adsorption device 20 to move the main target block 13 through the negative pressure 601 according to the adjustment message 81 until the axes of the target crystal grains 51 511 are respectively aligned with the axes 31 of the pushing members 30 and the axes 411 of the die placing regions 41 at the same time. As shown in FIGS. 16A to 16E , in the transferring step S4, the pushers 30 push the target dies 51 through the carrier film 10 to move toward the substrate 40 in sequence until the target dies 51 The sequence is transferred to the die placement areas 41. In other words, the control device 80 can also control one push member 30 to push one target die 51 through the carrier film 10 at a time.

值得一提的是,在第二實施例的轉移步驟S4的另一種操作模式中,控制裝置80控制該等頂推件30分別透過承載膜10推動該等目標晶粒51往靠近基板40的方向移動,直至該等目標晶粒51一起轉移至該等晶粒放置區41為止。換言之,控制裝置80能夠一次控制全部頂推件30藉由承載膜10同步推動全部目標晶粒51。It is worth mentioning that, in another operation mode of the transfer step S4 of the second embodiment, the control device 80 controls the pushing members 30 to push the target dies 51 through the carrier film 10 to the direction close to the substrate 40 moving until the target dies 51 are transferred to the die placement areas 41 together. In other words, the control device 80 can control all the pushers 30 to push all the target dies 51 synchronously through the carrier film 10 at one time.

請參閱圖1和圖17,在轉移步驟S4之後更包括轉換目標步驟S5,控制裝置80控制真空裝置60停止抽氣,使得吸附裝置20停止藉由負壓601吸附主要目標區塊13的周圍,主要目標區塊13內的另外數個晶粒界定為複數目標晶粒51,控制裝置80控制承載框90移動整塊承載膜10以及控制基板40移動,直至該等目標晶粒51的該等軸線511分別與該等頂推件30的該等軸線31以及另外數個晶粒放置區41的該等軸線411對齊為止。在轉換目標步驟S5結束之後接著進行轉移步驟S4。反覆進行轉換目標步驟S5和轉移步驟S4,直至主要目標區塊13內的全部晶粒50轉移至基板40為止。Please refer to FIG. 1 and FIG. 17 , after the transfer step S4, it further includes the conversion target step S5, the control device 80 controls the vacuum device 60 to stop pumping, so that the adsorption device 20 stops adsorbing the surroundings of the main target block 13 by the negative pressure 601, Several other dies in the main target block 13 are defined as a plurality of target dies 51, and the control device 80 controls the carrier frame 90 to move the entire carrier film 10 and the substrate 40 to move until the axes of the target dies 51 511 are aligned with the iso-axes 31 of the pushing members 30 and the iso-axes 411 of the other several die placement areas 41 respectively. After the conversion target step S5 is completed, the transfer step S4 follows. The conversion target step S5 and the transfer step S4 are repeated until all the dies 50 in the main target block 13 are transferred to the substrate 40 .

請參閱圖18及圖19,第三實施例與第二實施例的差異在於:如圖18所示,在準備步驟S1中,主要目標區塊13內的複數晶粒50排列參差不齊。如圖19所示,在位置調整步驟S3中,控制裝置80根據調整訊息81控制吸附裝置20藉由負壓601移動主要目標區塊13,直至該等目標晶粒51的其中之一的軸線511同時與該等頂推件30的其中之一的軸線31以及該等晶粒放置區41的其中之一的軸線411對齊為止。如圖20所示,在轉移步驟S4中,該等頂推件30的其中之一透過承載膜10推動該等目標晶粒51的其中之一往靠近基板40的方向移動,直至該等目標晶粒51的其中之一轉移至該等晶粒放置區41的其中之一為止。如圖1所示,反覆進行位置調整步驟S3和轉移步驟S4,直至該等目標晶粒51依序轉移至該等晶粒放置區41為止。Please refer to FIG. 18 and FIG. 19 , the difference between the third embodiment and the second embodiment is: as shown in FIG. 18 , in the preparation step S1 , the plurality of dies 50 in the main target block 13 are arranged unevenly. As shown in FIG. 19 , in the position adjustment step S3, the control device 80 controls the adsorption device 20 to move the main target block 13 by negative pressure 601 according to the adjustment information 81 until the axis 511 of one of the target grains 51 At the same time, it is aligned with the axis 31 of one of the pushing members 30 and the axis 411 of one of the die placement regions 41 . As shown in FIG. 20, in the transfer step S4, one of the pushing members 30 pushes one of the target dies 51 to move toward the substrate 40 through the carrier film 10 until the target dies One of the grains 51 is transferred to one of the die placement areas 41 . As shown in FIG. 1 , the position adjustment step S3 and the transfer step S4 are repeated until the target dies 51 are transferred to the die placement regions 41 in sequence.

綜上所述,本發明的晶粒高速定位方法能夠先透過負壓601小範圍固定主要目標區塊13的周圍,再透過負壓601移動主要目標區塊13,使得目標晶粒51的軸線511能夠精準地對齊晶粒放置區41的軸線411,無須移動整塊承載膜10,大幅減少補償位置時承載膜10所需移動的質量,移動速度快。To sum up, the high-speed die positioning method of the present invention can fix the main target block 13 in a small range through the negative pressure 601, and then move the main target block 13 through the negative pressure 601, so that the axis 511 of the target die 51 The axis 411 of the die placement area 41 can be precisely aligned without moving the entire carrier film 10 , and the moving mass of the carrier film 10 is greatly reduced when the position is compensated, and the moving speed is fast.

再者,無論主要目標區塊13內的複數晶粒50排列整齊或參差不齊,本發明的晶粒高速定位方法都能夠讓目標晶粒51的軸線511精準地對齊晶粒放置區41的軸線411。Furthermore, regardless of whether the plurality of dies 50 in the main target block 13 are arranged neatly or unevenly, the high-speed die positioning method of the present invention can make the axis 511 of the target die 51 accurately align with the axis of the die placement area 41 411.

此外,本發明的晶粒高速定位方法能夠適用於單一頂推件30,也能夠適用於複數頂推件30,並且配合主要目標區塊13內的複數晶粒50排列整齊或參差不齊而提供不同的操作模式。In addition, the high-speed die positioning method of the present invention can be applied to a single pusher 30, and can also be applied to multiple pushers 30, and it is provided in conjunction with the alignment or unevenness of the plurality of dies 50 in the main target block 13. different modes of operation.

又,本發明的晶粒高速定位方法能夠藉由影像擷取裝置70和控制裝置80精準地判斷出目標晶粒51與晶粒放置區41的相對位置,有助於控制裝置80精準地控制吸附裝置20將目標晶粒51移動至正確位置,讓目標晶粒51的軸線511能夠與晶粒放置區41的軸線411對齊,確保頂推件30能夠精準地將目標晶粒51轉移至晶粒放置區41。In addition, the high-speed die positioning method of the present invention can accurately determine the relative position of the target die 51 and the die placement area 41 through the image capture device 70 and the control device 80, which helps the control device 80 to accurately control the adsorption The device 20 moves the target die 51 to the correct position, so that the axis 511 of the target die 51 can be aligned with the axis 411 of the die placement area 41, ensuring that the pusher 30 can accurately transfer the target die 51 to the die placement District 41.

另外,在主要目標區塊13內的複數晶粒50沿著承載膜10的第二表面12移動的過程中,本發明的晶粒高速定位方法能夠藉由影像擷取裝置70和控制裝置80不斷地校正目標晶粒51與晶粒放置區41的相對位置,使得目標晶粒51的最終位置與正確位置零誤差。In addition, during the process of moving the plurality of dies 50 in the main target block 13 along the second surface 12 of the carrier film 10, the high-speed die positioning method of the present invention can continuously use the image capture device 70 and the control device 80 to The relative position of the target die 51 and the die placement area 41 is accurately corrected, so that the final position of the target die 51 and the correct position have zero error.

還有,如果頂推件30的軸線31與晶粒放置區41的軸線411能夠對齊,則頂推件30能夠以最精準的角度將目標晶粒51轉移至晶粒放置區41。Also, if the axis 31 of the pushing member 30 can be aligned with the axis 411 of the die placement area 41 , the pushing member 30 can transfer the target die 51 to the die placement area 41 at the most precise angle.

以上所述者僅為用以解釋本發明的較佳實施例,並非企圖據以對本發明做任何形式上的限制,是以,凡有在相同的發明精神下所作有關本發明的任何修飾或變更,皆仍應包括在本發明意圖保護的範疇。The above-mentioned ones are only preferred embodiments for explaining the present invention, and are not intended to limit the present invention in any form. Therefore, any modification or change of the present invention made under the same spirit of the invention , all should still be included in the category that the present invention intends to protect.

10:承載膜 11:第一表面 12:第二表面 13:主要目標區塊 14:其他目標區塊 20:吸附裝置 21:軸孔 22:氣孔 30:頂推件 31:軸線 40:基板 41:晶粒放置區 411:軸線 50:晶粒 51:目標晶粒 511:軸線 60:真空裝置 601:負壓 70:影像擷取裝置 71:第一影像資訊 72:第二影像資訊 80:控制裝置 81:調整訊息 82:校正訊息 90:承載框 S1:準備步驟 S2:固定步驟 S3:位置調整步驟 S4:轉移步驟 S5:轉換目標步驟 10: Carrier film 11: First surface 12: Second surface 13: Main target block 14: Other target blocks 20: Adsorption device 21: shaft hole 22: stomata 30: Pusher 31: axis 40: Substrate 41: Die placement area 411: axis 50: grain 51: target grain 511: axis 60: Vacuum device 601: negative pressure 70: Image capture device 71: First image information 72: Second image information 80: Control device 81:Adjust message 82: Calibration message 90: Bearing frame S1: Preparatory steps S2: Fixed step S3: Position adjustment step S4: transfer step S5: Conversion Goal Step

[圖1〕是本發明的晶粒高速定位方法的流程圖。 [圖2A〕至[圖2E〕是本發明的第一實施例的準備步驟的示意圖。 [圖3〕是本發明的第一實施例的吸附裝置和頂推件的仰視圖。 [圖4〕是本發明的第一實施例的吸附裝置、頂推件、影像擷取裝置、控制裝置的結構示意圖。 [圖5〕是本發明的第一實施例的固定步驟的示意圖。 〔圖6〕是本發明的第一實施例的第一影像資訊和調整訊息的傳送示意圖。 [圖7〕是本發明的第一實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列整齊,一目標晶粒的一軸線同時與一頂推件的一軸線以及一晶粒放置區的一軸線錯開。 [圖8A〕是本發明的第一實施例的吸附裝置移動主要目標區塊的立體圖。 [圖8B〕是本發明的第一實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列整齊,一目標晶粒的一軸線同時與一頂推件的一軸線以及一晶粒放置區的一軸線對齊。 〔圖9〕是本發明的第一實施例的第二影像資訊和校正訊息的傳送示意圖。 [圖10〕是本發明的第一實施例的轉移步驟的示意圖。 [圖11〕是本發明的第一實施例的影像擷取裝置的位置改變的示意圖。 [圖12〕是本發明的第二實施例的準備步驟的示意圖。 [圖13〕是本發明的第二實施例的固定步驟的示意圖。 [圖14〕是本發明的第二實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列整齊,複數目標晶粒的複數軸線分別同時與複數頂推件的複數軸線以及複數晶粒放置區的複數軸線錯開。 [圖15〕是本發明的第二實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列整齊,複數目標晶粒的複數軸線同時與複數頂推件的複數軸線以及複數晶粒放置區的複數軸線對齊。 [圖16A〕至[圖16E〕是本發明的第二實施例的轉移步驟的示意圖。 [圖17〕是本發明的第二實施例的轉換目標步驟的示意圖。 [圖18〕是本發明的第三實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列參差不齊,複數目標晶粒的複數軸線分別同時與複數頂推件的複數軸線以及複數晶粒放置區的複數軸線錯開。 [圖19〕是本發明的第二實施例的承載膜的仰視圖,其中目標區塊內的複數晶粒排列參差不齊,其中一目標晶粒的軸線與其中一頂推件的軸線以及其中一晶粒放置區的軸線對齊,其餘目標晶粒的複數軸線分別同時與其餘頂推件的複數軸線以及其餘晶粒放置區的複數軸線錯開。 [圖20〕是本發明的第三實施例的轉移步驟的示意圖。 [FIG. 1] is a flow chart of the high-speed crystal grain positioning method of the present invention. [ FIG. 2A ] to [ FIG. 2E ] are schematic views of the preparatory steps of the first embodiment of the present invention. [ Fig. 3 ] is a bottom view of the suction device and the pusher according to the first embodiment of the present invention. [FIG. 4] is a structural schematic diagram of the adsorption device, pusher, image capture device, and control device of the first embodiment of the present invention. [ Fig. 5 ] is a schematic diagram of a fixing step in the first embodiment of the present invention. [ FIG. 6 ] is a schematic diagram of transmission of the first image information and adjustment information in the first embodiment of the present invention. [FIG. 7] is a bottom view of the carrier film of the first embodiment of the present invention, wherein the plurality of grains in the target block are arranged neatly, and an axis of a target grain is simultaneously aligned with an axis of a pusher and a grain. One axis of the particle placement area is staggered. [ FIG. 8A ] is a perspective view of the main target block for moving the adsorption device according to the first embodiment of the present invention. [FIG. 8B] is a bottom view of the carrier film according to the first embodiment of the present invention, wherein the plurality of crystal grains in the target block are arranged neatly, and an axis of a target crystal grain is simultaneously aligned with an axis of a pusher and a crystal grain. Align with one axis of the particle placement area. [ FIG. 9 ] is a schematic diagram of the transmission of the second image information and correction information in the first embodiment of the present invention. [ Fig. 10 ] is a schematic diagram of a transfer step in the first embodiment of the present invention. [ FIG. 11 ] is a schematic diagram of the position change of the image capturing device according to the first embodiment of the present invention. [ Fig. 12 ] is a schematic diagram of the preparatory steps of the second embodiment of the present invention. [ Fig. 13 ] is a schematic diagram of a fixing step of the second embodiment of the present invention. [Fig. 14] is a bottom view of the carrier film according to the second embodiment of the present invention, wherein the plurality of crystal grains in the target block are arranged neatly, and the multiple axes of the multiple target crystal grains are respectively simultaneously with the multiple axes and the multiple axes of the multiple pushers. The plural axes of the die placement areas are staggered. [FIG. 15] is a bottom view of the carrier film according to the second embodiment of the present invention, wherein the plurality of crystal grains in the target block are arranged neatly, and the multiple axes of the multiple target crystal grains are simultaneously aligned with the multiple axes of the multiple pushers and the multiple crystal grains. The plural axes of the particle placement area are aligned. [ FIG. 16A ] to [ FIG. 16E ] are schematic diagrams of transfer steps of the second embodiment of the present invention. [ Fig. 17 ] is a schematic diagram of the conversion target step of the second embodiment of the present invention. [Fig. 18] is a bottom view of the carrier film according to the third embodiment of the present invention, wherein the arrangement of the plurality of crystal grains in the target block is uneven, and the plurality of axes of the plurality of target crystal grains are simultaneously with the plurality of axes of the plurality of pushers. And the multiple axes of the multiple grain placement areas are staggered. [FIG. 19] is a bottom view of the carrier film according to the second embodiment of the present invention, wherein the plurality of crystal grains in the target block are arranged unevenly, and the axis of one of the target crystal grains and the axis of one of the pushing members and among them The axes of one die placement area are aligned, and the plural axes of the remaining target dies are respectively and simultaneously staggered from the plural axes of the rest of the pushers and the plural axes of the rest of the die placement areas. [ Fig. 20 ] is a schematic diagram of a transfer step in the third embodiment of the present invention.

S1:準備步驟 S1: Preparatory steps

S2:固定步驟 S2: Fixed step

S3:位置調整步驟 S3: Position adjustment step

S4:轉移步驟 S4: transfer step

S5:轉換目標目驟 S5: Conversion target directory step

Claims (10)

一種晶粒高速定位方法,包括下列步驟: 準備步驟,一承載膜的一第一表面朝向一吸附裝置及至少一頂推件,該承載膜的一第二表面朝向一基板並且具有複數晶粒,該承載膜依據該等晶粒的數量區隔成複數區塊,其中一個區塊界定為一主要目標區塊,其餘區塊界定為複數其他目標區塊,該主要目標區塊內的複數晶粒的至少一者界定為至少一目標晶粒,該基板具有至少一晶粒放置區,該吸附裝置對準該主要目標區塊的周圍,該至少一目標晶粒的一軸線與該至少一晶粒放置區的一軸線錯開; 固定步驟,該吸附裝置移動至該主要目標區塊的周圍並且藉由一負壓吸附該主要目標區塊的周圍,該至少一頂推件移動至該主要目標區塊; 位置調整步驟,該吸附裝置藉由該負壓移動該主要目標區塊,直至該至少一目標晶粒的該軸線與該至少一晶粒放置區的該軸線對齊為止,該吸附裝置停止移動;以及 轉移步驟,該至少一頂推件透過該承載膜推動該至少一目標晶粒往靠近該基板的方向移動,直至該至少一目標晶粒轉移至該至少一晶粒放置區為止。 A method for high-speed positioning of crystal grains, comprising the following steps: In the preparatory step, a first surface of a carrier film faces a suction device and at least one push member, a second surface of the carrier film faces a substrate and has a plurality of crystal grains, and the carrier film is divided according to the number of the crystal grains Separated into a plurality of blocks, one of which is defined as a main target block, and the remaining blocks are defined as a plurality of other target blocks, at least one of the plurality of dies in the main target block is defined as at least one target die , the substrate has at least one die placement area, the adsorption device is aligned around the main target block, and an axis of the at least one target die is offset from an axis of the at least one die placement area; In the fixing step, the adsorption device moves to the periphery of the main target block and absorbs the periphery of the main target block by a negative pressure, and the at least one pushing member moves to the main target block; a position adjustment step, the adsorption device moves the main target block by the negative pressure until the axis of the at least one target die is aligned with the axis of the at least one die placement area, and the adsorption device stops moving; and In the transfer step, the at least one pushing member pushes the at least one target die towards the substrate through the carrier film until the at least one target die is transferred to the at least one die placement area. 如請求項1所述的晶粒高速定位方法,其中,在該準備步驟中,該承載膜的該第一表面朝向一頂推件,該主要目標區塊內的複數晶粒的其中之一界定為一目標晶粒,該基板具有一晶粒放置區,該目標晶粒的該軸線與該晶粒放置區的該軸線錯開;其中,在該固定步驟中,該頂推件移動至該主要目標區塊;其中,在該位置調整步驟中,該吸附裝置藉由該負壓移動該主要目標區塊,直至該目標晶粒的該軸線與該晶粒放置區的該軸線對齊為止;以及其中,在該轉移步驟中,該頂推件透過該承載膜推動該目標晶粒往靠近該基板的方向移動,直至該目標晶粒轉移至該晶粒放置區為止。The high-speed die positioning method as claimed in claim 1, wherein, in the preparation step, the first surface of the carrier film faces a pusher, and one of the plurality of dies in the main target block is defined For a target die, the substrate has a die placement area, the axis of the target die is offset from the axis of the die placement area; wherein, in the fixing step, the pusher moves to the main target block; wherein, in the position adjustment step, the adsorption device moves the main target block by the negative pressure until the axis of the target die is aligned with the axis of the die placement area; and wherein, In the transfer step, the pushing member pushes the target die to move towards the substrate through the carrying film until the target die is transferred to the die placement area. 如請求項2所述的晶粒高速定位方法,其中,在該準備步驟中,該主要目標區塊內的複數晶粒排列整齊或參差不齊。The high-speed die positioning method as claimed in claim 2, wherein, in the preparation step, the plurality of dies in the main target block are arranged neatly or unevenly. 如請求項1所述的晶粒高速定位方法,其中,在該準備步驟中,該承載膜的該第一表面朝向複數頂推件,該主要目標區塊內的複數晶粒排列整齊,該主要目標區塊內的複數晶粒界定為複數目標晶粒,該基板具有複數晶粒放置區,該等目標晶粒的該等軸線分別與該等晶粒放置區的該等軸線錯開;其中,在該固定步驟中,該等頂推件移動至該主要目標區塊;以及其中,在該位置調整步驟中,該吸附裝置藉由該負壓移動該主要目標區塊,直至該等目標晶粒的該等軸線分別與該等晶粒放置區的該等軸線對齊為止。The high-speed die positioning method as claimed in item 1, wherein, in the preparation step, the first surface of the carrier film faces a plurality of pushers, the plurality of dies in the main target block are arranged neatly, and the main The plurality of dies in the target block is defined as a plurality of target dies, the substrate has a plurality of die placement areas, and the axes of the target dies are respectively staggered from the axes of the die placement areas; wherein, in In the fixing step, the pushers move to the main target block; and wherein, in the position adjustment step, the adsorption device moves the main target block by the negative pressure until the target dies The iso-axes are respectively aligned with the iso-axes of the die placement regions. 如請求項4所述的晶粒高速定位方法,其中,在該轉移步驟中,該等頂推件分別依序或一起透過該承載膜推動該等目標晶粒往靠近該基板的方向移動,直至該等目標晶粒依序或一起轉移至該等晶粒放置區為止。The high-speed die positioning method as described in Claim 4, wherein, in the transferring step, the pushing members push the target dies to move towards the substrate through the carrier film sequentially or together until The target dies are transferred to the die placement areas sequentially or together. 如請求項1所述的晶粒高速定位方法,其中,在該準備步驟中,該承載膜的該第一表面朝向複數頂推件,該主要目標區塊內的複數晶粒排列參差不齊,該主要目標區塊內的複數晶粒界定為複數目標晶粒,該基板具有複數晶粒放置區,該等目標晶粒的該等軸線分別與該等晶粒放置區的該等軸線錯開;其中,在該固定步驟中,該等頂推件移動至該主要目標區塊;其中,在該位置調整步驟中,該吸附裝置藉由該負壓移動該主要目標區塊,直至該等目標晶粒的其中之一的該軸線與該等晶粒放置區的其中之一的該軸線對齊為止;其中,在該轉移步驟中,該等頂推件的其中之一透過該承載膜推動該等目標晶粒的其中之一往靠近該基板的方向移動,直至該等目標晶粒的其中之一轉移至該等晶粒放置區的其中之一為止;以及其中,反覆進行該位置調整步驟和該轉移步驟,直至該等目標晶粒依序轉移至該等晶粒放置區為止。The high-speed die positioning method as claimed in item 1, wherein, in the preparation step, the first surface of the carrier film faces a plurality of pushers, and the plurality of dies in the main target area are arranged unevenly, The plurality of dies in the main target block is defined as a plurality of target dies, the substrate has a plurality of die placement areas, and the axes of the target dies are respectively staggered from the axes of the die placement areas; wherein , in the fixing step, the pushers move to the main target block; wherein, in the position adjustment step, the adsorption device moves the main target block by the negative pressure until the target dies until the axis of one of the dies is aligned with the axis of one of the die placement regions; wherein, in the transfer step, one of the pushers pushes the target dies through the carrier film one of the dies moves toward the substrate until one of the target dies is transferred to one of the die placement regions; and wherein the position adjusting step and the transferring step are repeated until the target dies are sequentially transferred to the die placement areas. 如請求項1所述的晶粒高速定位方法,其中,在該固定步驟中,一影像擷取裝置擷取該至少一目標晶粒、該至少一頂推件和該至少一晶粒放置區的一影像,以獲得一第一影像資訊,並且將該第一影像資訊傳送至一控制裝置,該控制裝置根據該第一影像資訊判斷出該至少一目標晶粒的該軸線與該至少一晶粒放置區的該軸線之間的一間距及一方位,以獲得一調整訊息;以及其中,在該位置調整步驟中,該控制裝置根據調整訊息控制該吸附裝置藉由該負壓移動該主要目標區塊,直至該至少一目標晶粒的該軸線與該至少一晶粒放置區的該軸線對齊為止,該控制裝置控制該吸附裝置停止移動,並且進一步開始執行該轉移步驟,使得該控制裝置進一步控制該至少一頂推件往該承載膜的方向移動。The high-speed die positioning method as described in claim 1, wherein, in the fixing step, an image capture device captures images of the at least one target die, the at least one pusher and the at least one die placement area an image to obtain a first image information, and transmit the first image information to a control device, and the control device judges the axis of the at least one target die and the at least one die according to the first image information an interval and an orientation between the axes of the placement areas to obtain an adjustment message; and wherein, in the position adjustment step, the control device controls the adsorption device to move the main target area by the negative pressure according to the adjustment information block, until the axis of the at least one target grain is aligned with the axis of the at least one grain placement area, the control device controls the adsorption device to stop moving, and further starts to perform the transferring step, so that the control device further controls The at least one pushing member moves towards the direction of the carrying film. 如請求項7所述的晶粒高速定位方法,其中,在該位置調整步驟中,在該主要目標區塊內的複數晶粒沿著該承載膜的該第二表面移動的過程中,該影像擷取裝置擷取該至少一目標晶粒、該至少一頂推件和該至少一晶粒放置區的一影像,以獲得一第二影像資訊,並且將該第二影像資訊傳送至該控制裝置,該控制裝置根據該第二影像資訊判斷出該至少一目標晶粒的該軸線是否與該至少一晶粒放置區的該軸線對齊;其中,當該控制裝置根據該第二影像資訊判斷出該至少一目標晶粒的該軸線與該至少一晶粒放置區的該軸線對齊時,該控制裝置控制該吸附裝置停止移動,並且進一步開始執行該轉移步驟,使得該控制裝置進一步控制該至少一頂推件往該承載膜的方向移動;以及其中,當該控制裝置根據該第二影像資訊判斷出該至少一目標晶粒的該軸線尚未與該至少一晶粒放置區的該軸線對齊時,該控制裝置根據該第二影像資訊判斷出該至少一目標晶粒的該軸線與該至少一晶粒放置區的該軸線之間的一間距及一方位,以獲得一校正訊息,該控制裝置根據校正訊息控制該吸附裝置藉由該負壓移動該主要目標區塊,直至該至少一目標晶粒的該軸線與該至少一晶粒放置區的該軸線對齊為止,該控制裝置控制該吸附裝置停止移動,並且進一步開始執行該轉移步驟,使得該控制裝置進一步控制該至少一頂推件往該承載膜的方向移動。The high-speed die positioning method as claimed in claim 7, wherein, in the position adjustment step, during the movement of the plurality of die in the main target block along the second surface of the carrier film, the image The capture device captures an image of the at least one target die, the at least one pusher and the at least one die placement area to obtain a second image information, and transmits the second image information to the control device , the control device determines whether the axis of the at least one target die is aligned with the axis of the at least one die placement area according to the second image information; wherein, when the control device determines the When the axis of at least one target die is aligned with the axis of the at least one die placement area, the control device controls the adsorption device to stop moving, and further starts to perform the transfer step, so that the control device further controls the at least one top The pusher moves towards the direction of the carrier film; and wherein, when the control device judges according to the second image information that the axis of the at least one target die is not aligned with the axis of the at least one die placement area, the The control device judges a distance and an orientation between the axis of the at least one target die and the axis of the at least one die placement area according to the second image information, so as to obtain a correction message. The message controls the adsorption device to move the main target block by the negative pressure until the axis of the at least one target die is aligned with the axis of the at least one die placement area, and the control device controls the adsorption device to stop moving , and further start to execute the transferring step, so that the control device further controls the at least one pushing member to move towards the direction of the carrier film. 如請求項1所述的晶粒高速定位方法,其中,在該準備步驟中,該至少一頂推件的一軸線對準該至少一晶粒放置區的該軸線;以及其中,在該位置調整步驟中,該吸附裝置藉由該負壓移動該主要目標區塊,直至該至少一目標晶粒的該軸線同時與該至少一頂推件的該軸線以及該至少一晶粒放置區的該軸線對齊為止,該吸附裝置停止移動。The high-speed die positioning method as claimed in claim 1, wherein, in the preparation step, an axis of the at least one pushing member is aligned with the axis of the at least one die placement area; and wherein, in the position adjustment In the step, the adsorption device moves the main target block by the negative pressure until the axis of the at least one target die is simultaneously aligned with the axis of the at least one pusher and the axis of the at least one die placement area Alignment, the adsorption device stops moving. 如請求項1所述的晶粒高速定位方法,其中,在該轉移步驟之後更包括轉換目標步驟,該吸附裝置停止藉由該負壓吸附該主要目標區塊的周圍,該主要目標區塊內的複數晶粒的至少另一者界定為至少另一目標晶粒,移動整塊承載膜和該基板,直至該至少另一目標晶粒的一軸線與至少另一晶粒放置區的一軸線對齊為止;其中,在該轉換目標步驟結束之後接著進行該轉移步驟;以及其中,反覆進行該轉換目標步驟和該轉移步驟,直至該主要目標區塊內的全部晶粒轉移至該基板為止。The high-speed crystal grain positioning method as described in Claim 1, wherein, after the transfer step, it further includes a target conversion step, the adsorption device stops absorbing the surroundings of the main target block by the negative pressure, and the main target block At least another one of the plurality of crystal grains is defined as at least another target grain, and the entire carrier film and the substrate are moved until an axis of the at least another target grain is aligned with an axis of at least another die placement area wherein the transfer step is performed after the conversion target step is completed; and wherein the conversion target step and the transfer step are repeated until all the dies in the main target block are transferred to the substrate.
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