TWI766156B - Template for nanoimprinting and method for producing thereof, as well as two-stage mesa blanks and method for producing therof - Google Patents

Abstract

Provided is a template for nanoimprinting characterized by comprising a base and a translucent substrate having a mesa structure arranged at a main surface of the base, wherein a concave and convex structured transfer pattern and a concave and convex structured pattern for marking are arranged at a main surface of the mesa structure, a high contrast film is arranged at a bottom surface of a concave part in the pattern for marking, and a tantalum oxide film is arranged at a surface of the high contrast film so as to cover the high contrast film.

Description

Die for nanoimprinting, method for manufacturing the same, and 2-stage mesa substrate and method for manufacturing the same

The present invention relates to a nano-imprinting die and its manufacturing method, and a two-stage mesa substrate and its manufacturing method.

Nanoimprint lithography is a method of transferring a pattern to a transfer object through the following steps: making the desired transfer pattern provided on the nanoimprint die in close contact with the surface coated on the transfer object The curable resin layer is transferred to the curable resin layer by applying external stimuli such as heat or light to transfer the pattern to the curable resin layer. Nanoimprint lithography is expected as a next-generation lithography technology for LSI (Large Scale Integration, large-scale integrated circuit) manufacturing because it can form patterns by a simple method. Furthermore, it is also expected as a technology for processing optical parts, light-emitting elements, photoelectric conversion elements, biosensors, decorative items, beverage containers, food containers, and the like. Therefore, development of a die for nanoimprinting has been advanced.

In nanoimprint lithography, the transfer pattern of the nanoimprint die is transferred to the transferred When the body is formed, it is necessary to align the position of the die for nanoimprinting with the body to be transferred. In order to perform this kind of positional alignment, alignment marks are sometimes provided on the base material of the die for nanoimprinting through which light can pass, and corresponding alignment marks are also provided on the transferred body. In addition, an identification mark for identifying the type or the like of the die itself may be provided on the die for nanoimprinting.

The alignment mark or the identification mark includes, for example, a pattern of a concavo-convex structure in the main surface of the substrate of the die for nanoimprinting, and a high-contrast film provided on the pattern. Such a high-contrast film may not be able to obtain the desired contrast due to the reduction of the film during cleaning of the die for nanoimprinting. Therefore, various structures such as the film reduction that can suppress such a high-contrast film are adopted.

For example, Patent Document 1 describes a structure in which a high-contrast film is provided on the pattern of the concavo-convex structure on the main surface of the substrate of the die sheet, and a protective high-contrast film is provided on the entire main surface of the substrate. the protective film. However, in such a structure, since the protective film is provided on the entire main surface, when the transfer pattern provided on the main surface is fine, the thickness of the protective film may be the cause and the uniformity of the transfer pattern may be impaired. .

In addition, Patent Document 2 describes a structure in which a high-contrast film is provided on the convex portions of the pattern of the concavo-convex structure in the main surface of the substrate of the die, and a region including the concave portions of the pattern of the concave-convex structure is provided. Set the protective film in such a way as to cover the high contrast film. However, in such a structure, in particular, since the high contrast film is provided on the convex portion, cleaning liquid or the like may penetrate into the high contrast film depending on the film-forming state of the protective film in the end portion of the high contrast film. Therefore, the film reduction of the high-contrast film cannot be suppressed sufficiently.

Furthermore, Patent Document 3 describes a structure in which a high-contrast film is provided in the concave portion of the pattern of the concavo-convex structure in the alignment region of the main surface of the substrate of the die, and the high-contrast film is provided on the high-contrast film protective film. However, in such a structure, depending on the film-formation state of the protective film in the edge part of a high-contrast film, the high-contrast film may not be fully protected.

Therefore, in the structure of the conventional protective film, the film reduction of a high contrast film cannot be suppressed fully.

[Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2009-200505

[Patent Document 2] Japanese Patent Laid-Open No. 2013-30522

[Patent Document 2] Japanese Patent Publication No. 2013-519236

The present invention has been made in view of the above-mentioned problems, and its main object is to provide a die for nanoimprinting capable of sufficiently suppressing film reduction of a high-contrast film, and a method for producing the same.

In order to solve the above-mentioned problems, the present invention provides a die for nanoimprinting, which is characterized by comprising a translucent substrate having a base portion and a mesa structure provided on the main surface of the base portion, and the main surface of the mesa structure is provided on the main surface of the base portion. , which is provided with the transfer pattern of the concave-convex structure and the marking of the concave-convex structure In the pattern, a high-contrast film is provided on the bottom surface of the concave portion of the pattern for marking, and a tantalum oxide film is provided on the surface of the high-contrast film so as to cover the high-contrast film.

According to the present invention, the film reduction or disappearance of the high-contrast film can be sufficiently suppressed.

In the said invention, it is preferable that the said tantalum oxide film is provided in the surface of the said high contrast film, and the upper surface of the convex part of the said pattern for marking. This is because the above-mentioned high-contrast film can be effectively covered without being exposed.

Moreover, in the said invention, it is preferable that a groove|channel is provided along the said tantalum oxide film in the main surface of the said mesa structure. This is because the presence or absence of the tantalum oxide film can be easily determined.

In the above invention, preferably, the mesa structure includes a first level structure provided on the main surface of the base portion and a second level structure provided on the main surface of the first level structure, the transfer pattern and The marking pattern is provided on the principal surface of the second level structure, a light-shielding portion is provided on the principal surface of the first level structure in a region surrounding the second level structure, and the tantalum oxide film covers The main surface of the said light-shielding part is provided in the main surface of the said light-shielding part. This is because the light shielding portion can prevent the exposure light from being irradiated to an unintended area during photoimprinting, and the tantalum oxide film can prevent the film of the shielding portion from decreasing or disappearing.

In the said invention, it is preferable that the said light-shielding part has the multilayer structure which laminated|stacked the light-shielding film and the said high contrast film in this order. The reason for this is that it is possible to effectively prevent the exposure light from being irradiated to an unintended area during photoimprinting.

In the said invention, it is preferable that the recessed part which contains the said 2nd step structure in plan view is provided in the surface on the opposite side to the main surface of the said base part. The reason for this is that air can be suppressed from being trapped between the transfer pattern and the curable resin layer applied on the surface of the transfer target body.

Furthermore, the present invention provides a method for producing a die for nanoimprinting, which is characterized by comprising: a preparation step of preparing a die-forming member, the die-forming member having a light-transmitting substrate and a high-contrast film The above-mentioned translucent base material has a base and a mesa structure arranged on the main surface of the base, and the main surface of the mesa structure is provided with a transfer pattern of a concave-convex structure and a marking pattern of the concave-convex structure, and the high-contrast film is provided with on the entire main surface side of the translucent base material; the first resin layer forming step is to use the marking pattern area provided with the marking pattern as a film, and the transfer pattern area provided with the transfer pattern In the form of a thick film, a first resin layer is formed on the marking pattern and the transfer pattern, and a first etching step is performed by etching the die-forming member on which the first resin layer is formed, The high-contrast film is left on at least the bottom surface of the concave portion of the marking pattern and the transfer pattern area, and the other parts of the high-contrast film are removed; the step of forming a tantalum oxide film is performed after the first etching step. A tantalum oxide film is formed on the entire main surface side of the above-mentioned die-forming member; in the second resin layer forming step, the above-mentioned pattern area for marking becomes a thick film, and the above-mentioned transfer pattern area becomes a thin film. A second resin layer is formed on the tantalum oxide film in the marking pattern region and the transfer pattern region; a second etching step is performed by etching the die-forming member on which the second resin layer is formed so that the tantalum oxide film formed on at least the surface of the high contrast film remains, and other parts of the tantalum oxide film are removed; and a third etching step is performed by performing the remaining tantalum oxide film as a mask etching of the mask, which will be set in The high-contrast film of the above-mentioned transfer pattern area is removed.

ADVANTAGE OF THE INVENTION According to this invention, the die for nanoimprint which can fully suppress the film reduction or disappearance of a high contrast film can be manufactured.

In the above invention, preferably, in the above-mentioned first etching step, in the above-mentioned pattern for marking, the above-mentioned high-contrast film is left only on the bottom surface of the above-mentioned concave portion, and the other parts of the above-mentioned high-contrast film are removed. 2. In the etching step, the tantalum oxide film formed on the surface of the high-contrast film and the upper surface of the convex portion of the pattern for marking is left. The reason for this is that the above-mentioned die for nanoimprint in which the above-mentioned tantalum oxide film is provided on the surface of the above-mentioned high-contrast film and the upper surface of the convex portion of the above-mentioned pattern for marking can be produced.

In the above invention, it is preferable that in the second resin layer forming step, the region to be the thick film of the second resin layer is set to be inward from the region to be the thin film of the first resin layer in plan view, and In the said 2nd etching process, by performing the said etching, a groove|channel is formed in the main surface of the said mesa structure along the area|region which becomes the thick film of the said 2nd resin layer. The reason for this is that the above-mentioned die for nanoimprinting can be produced by recognizing the existence or absence of the grooves to determine the presence or absence of the tantalum oxide film.

In the above invention, preferably, in the preparation step, the member for forming a die is prepared, and in the member for forming a die, the mesa structure has a first step structure provided on the main surface of the base portion and is provided. In the second step structure on the main surface of the first step structure, the transfer pattern and the marking pattern are provided on the main surface of the second step structure, and further have The light-shielding portion provided in the main surface of the first level-difference structure in the region around the second level-difference structure, in the first resin layer forming step, the first resin layer is also formed on the light-shielding portion, In the first etching step, the light-shielding portion is left, in the tantalum oxide film forming step, the tantalum oxide film is formed on the main surface of the light-shielding portion, and in the second resin layer forming step, it is also formed on the tantalum oxide film. The thick second resin layer is formed on the tantalum oxide film on the main surface of the light shielding portion, and the tantalum oxide film formed on the main surface of the light shielding portion is left in the second etching step. This is because the above-mentioned light-shielding portion can suppress the irradiation of exposure light to an unintended area during photoimprinting, and the above-mentioned tantalum oxide film can suppress the reduction or disappearance of the film of the above-mentioned light-shielding portion. Die for rice stamping.

In addition, in the present invention, there is provided a die for nanoimprinting, characterized by comprising a translucent substrate having a base portion and a mesa structure provided on the main surface of the base portion, and the main surface of the mesa structure is provided on the main surface of the base portion. , a transfer pattern with a concave-convex structure and a marking pattern with a concave-convex structure are provided, a high-contrast film is arranged on the bottom surface of the concave portion of the above-mentioned marking pattern, and the end of the high-contrast film is not exposed. The surface of the high-contrast film, the side surface of the convex portion of the pattern for marking, and the upper surface of the convex portion of the pattern for marking are a protective film comprising a material different from the high-contrast film, and the protective film is located at the end The above-mentioned marks are provided in the manner of the upper surface of the convex portion of the pattern.

ADVANTAGE OF THE INVENTION According to this invention, the die for nanoimprint which can suppress the film reduction of a high contrast film sufficiently can be manufactured.

Moreover, in the above-mentioned invention, it is preferable that the above-mentioned protective film is provided with the above-mentioned protective film in a plan view. In the high contrast film, the concave part and the convex part of the above-mentioned pattern for marking are provided in a larger area than the above-mentioned alignment mark area so that the alignment mark area in which a plurality of concave parts and convex parts are continuously arranged is included in the inner side. This is because the penetration of the chemical solution can be reliably suppressed by the protective film, and the film reduction of the high-contrast film can be suppressed.

Moreover, according to this invention, the said protective film may be provided in the area|region larger than the said several said alignment mark area so that it may contain a plurality of said alignment mark area|regions.

Moreover, according to this invention, it is preferable that the said protective film is provided in the rectangular shape in planar view.

Moreover, according to this invention, it is preferable to provide a groove|channel along the said protective film in the main surface of the said mesa structure. The reason for this is that the presence or absence of the above-mentioned protective film can be easily determined.

Moreover, according to this invention, it is preferable that the said protective film is a tantalum oxide film. The reason for this is that the tantalum oxide film has a sufficiently high resistance to sulfuric acid cleaning or alkali cleaning for removing foreign substances such as resists used in nanoimprint lithography, and it cannot be removed by such cleaning. In addition, the resistance of plasma ashing using oxygen-containing gas to remove the remaining foreign matter is sufficiently high.

In addition, in the present invention, there is provided a two-stage mesa substrate, which is used for manufacturing a die for nanoimprinting, and has a light-transmitting two-stage mesa-substrate forming member, the light-transmitting two The member for forming a stage base has a base and a mesa structure provided on the main surface of the base, and the mesa structure includes a first stepped structure provided on the main surface of the base and a first stepped structure provided on the main surface of the first stepped structure. The second level difference structure is at least the above-mentioned first level difference structure among the principal surfaces of the above-mentioned first level difference structure. A light-shielding portion is provided in a region around the two-step structure, and a protective film is provided on the main surface of the light-shielding portion so as to cover the main surface of the light-shielding portion.

If it is such a two-stage mesa substrate, the above-mentioned die for nanoimprinting of the present invention can be easily obtained. Furthermore, the reason for this is that the light shielding portion can prevent the exposure light from being irradiated to an unintended area during photoimprinting by the light shielding portion, and the film of the light shielding portion can be prevented from decreasing or disappearing by the protective film. Die for nanoimprinting.

Moreover, in this invention, the said light-shielding part may be provided from the main surface of the said 1st step structure to the main surface of the said base part.

Further, in the present invention, there is provided a method for producing a two-stage mesa base, characterized in that it is the above-mentioned method for producing a two-stage mesa base, and a member for forming a light-transmitting two-stage mesa base is prepared. The mesa base forming member has a base portion and a mesa structure provided on the main surface of the base portion, and the mesa structure includes a first stepped structure provided on the main surface of the base portion and a first stepped structure provided on the main surface of the first stepped structure. A two-step structure, wherein a film for forming a light-shielding portion is formed on the principal surface of the side where the first-step structure and the second-step structure are arranged on the light-transmitting two-stage mesa base forming member, and the film for forming a light-shielding portion is formed on the light-shielding portion. A film for forming a protective film is formed on the film, a curable resin layer is formed on the main surface of the first step structure and the main surface of the second step structure, and the curable resin layer is formed on the first step. The film thickness of the curable resin layer on the main surface of the stepped structure is made thicker than the film thickness of the curable resin layer formed on the main surface of the second stepped structure. The above-mentioned first step of the light-transmitting two-stage mesa base forming member is produced by etching the light-shielding portion forming film and the protective film so that only the main surface of the first step structure remains. In the main surface of the structure, the area around the second step structure is provided with a light-shielding portion and a two-stage mesa base of a protective film in this order.

Further, in the present invention, there is provided a method for producing a two-stage mesa base, characterized in that it is the above-mentioned method for producing a two-stage mesa base, and a member for forming a light-transmitting two-stage mesa base is prepared. The mesa base forming member has a base portion and a mesa structure provided on the main surface of the base portion, and the mesa structure includes a first stepped structure provided on the main surface of the base portion and a first stepped structure provided on the main surface of the first stepped structure. 2-step structure, a film for forming a light-shielding portion is formed on the surface of the member for forming a light-transmitting two-stage mesa base, a film for forming a protective film is formed on the film for forming a light-shielding portion, and a film for forming a protective film is coated on the film for forming a protective film. A resist composition is formed to form a resist layer, and by exposing and developing the resist layer through a mask, the resist layer on the main surface of the second step structure is removed, and the exposed second step structure is removed. The film for forming a light-shielding portion and the film for forming a protective film formed on the main surface of the stepped structure are removed by etching, thereby producing a laminate in which the light-shielding portion and the protective film are laminated in this order. The main surface of the said 1st level|step difference structure of the member for stage mesa base forming is provided to the 2-stage mesa base of the main surface of the said base part.

In this invention, the effect which can fully suppress the film reduction or disappearance of a high contrast film is exhibited.

1: Member for die formation

10: Die for nanoimprinting

17: Curable resin layer

18: resist layer

20: Translucent substrate

21: Base

21a: the main surface of the base 21

22: Countertop Construction

22a: Main surface of table top structure 22

25: Depressed part

26: Groove

27: 1st order difference construction

27a: The main surface of the first-order difference structure 27

28: 2nd order difference construction

28a: The main surface of the second-order difference structure 28

30: transfer pattern

32: Recess

32a: the bottom surface of the recess 32

34: convex part

34a: upper surface of convex portion 34

40: Pattern for marking

40A: Alignment mark area

42: Recess

42a: Underside

44: convex part

44a: upper surface

44b: side

50: High contrast film

60: Tantalum oxide film

61: Peripheral

70: Shading part

70a: the main surface of the shading portion 70

70b: Side

80: shading film

91: The first resin layer

91a: Film of the first resin layer 91

91b: Thick film of the first resin layer 91

91c: Film for shading part

92: Second resin layer

92a: Thick film of the second resin layer 92

92b: film of the second resin layer 92

92c: Thick film for shading part

100: Die for resin layer thickness specification

101: Die for resin layer thickness specification

200: 2-segment countertop base

201: Light-transmitting 2-stage mesa base forming member

210: Base

210a: the main surface of the base 210

220: Countertop Construction

250: Depression

270: 1st order difference construction

270a: Main surface of 1st step structure 270

280: 2nd order difference construction

600: Protective film

610: Film for forming protective film

D: The depth of the concave portion of the concave-convex structure

H ₁ : the thickness of the film 91a

H ₂ : Thickness of the thick film 91b

H ₃ : Thickness of the thick film 92a

H ₄ : the thickness of the film 92b

H ₅ : Thickness

H ₆ : Thickness of the thick film 92c for the light-shielding portion

M: height of the table top structure

M1: The height of the first-order difference structure

M2: The height of the second-order difference structure

R: Formation region of the thin film 91a of the first resin layer 91

w3: width

w4: width

FIGS. 1( a ) to ( c ) are schematic views showing an example of a die for nanoimprinting of the present invention.

2(a) and (b) are schematic views showing another example of the die for nanoimprinting of the present invention.

3(a) and (b) are schematic views showing another example of the die for nanoimprinting of the present invention.

4(a) and (b) are schematic views showing another example of the die for nanoimprinting of the present invention.

FIGS. 5( a ) to ( c ) are schematic views showing another example of the die for nanoimprinting of the present invention.

FIG. 6 is a schematic cross-sectional view showing another example of the die for nanoimprinting of the present invention.

FIGS. 7( a ) to ( c ) are schematic cross-sectional views showing an example of a method for producing a die for nanoimprinting of the present invention.

FIGS. 8( a ) to ( c ) are schematic cross-sectional views showing an example of a method for producing a die for nanoimprinting of the present invention.

FIGS. 9( a ) to ( c ) are schematic cross-sectional views showing an example of a method for producing a die for nanoimprinting of the present invention.

FIGS. 10( a ) to ( c ) are schematic cross-sectional views showing another example of the manufacturing method of the die for nanoimprinting of the present invention.

FIGS. 11( a ) to ( c ) are schematic cross-sectional views showing another example of the manufacturing method of the die for nanoimprinting of the present invention.

FIGS. 12( a ) to ( c ) are schematic cross-sectional views showing another example of the manufacturing method of the die for nanoimprinting of the present invention.

FIGS. 13( a ) to ( c ) are schematic views showing another example of the die for nanoimprinting of the present invention.

14( a ) and ( b ) are plan views showing a plurality of alignment mark regions and protective film forming regions formed on the main surface of the mesa structure of the die for nanoimprinting of the present invention.

FIG. 15 is a schematic cross-sectional view showing an example of a two-stage mesa base of the present invention.

FIG. 16 is a schematic cross-sectional view showing another example of the two-stage mesa substrate of the present invention.

17(a)-(f) are schematic cross-sections showing the manufacturing method of the two-stage mesa substrate of the present invention view.

FIGS. 18( a ) to ( e ) are schematic cross-sectional views showing another example of the manufacturing method of the two-stage mesa substrate of the present invention.

FIGS. 19( a ) to ( c ) are schematic cross-sectional views showing another example of the manufacturing method of the two-stage mesa substrate of the present invention.

Hereinafter, the die for nanoimprinting of the present invention and the manufacturing method thereof will be described in detail.

A. Die for nanoimprinting (first embodiment)

The nanoimprint die according to the first aspect of the present invention is characterized by comprising a light-transmitting substrate having a base portion and a mesa structure provided on the main surface of the base portion, and provided on the main surface of the mesa structure. A transfer pattern with a concave-convex structure and a marking pattern with a concave-convex structure, a high-contrast film is provided on the bottom surface of the concave portion of the marking pattern, and tantalum oxide is provided on the surface of the high-contrast film so as to cover the high-contrast film. membrane.

An example of the die for nanoimprinting of the present invention will be described with reference to the drawings. Fig. 1(a) is a schematic cross-sectional view showing an example of a die for nanoimprinting of the present invention. Fig. 1(b) is an enlarged view within the dotted frame shown in Fig. 1(a). FIG. 1( c ) is a view obtained from a plan view of the table top structure shown in FIG. 1( b ) from the main surface side.

As shown in FIGS. 1( a ) to 1 ( c ), the die 10 for nanoimprinting includes a translucent substrate 20 having a base portion 21 and a mesa structure 22 provided on the main surface 21 a of the base portion 21 . On the main surface of the mesa structure 22 22a, a transfer pattern 30 having a concave-convex structure and a marking pattern 40 having a concave-convex structure are provided. Moreover, the recessed part 25 containing the mesa structure 22 in plan view is provided in the surface on the opposite side to the main surface 21a of the base part 21. As shown in FIG. Furthermore, the high-contrast film 50 containing Cr is provided only on the bottom surface 42a of the concave portion 42 of the marking pattern 40 . The high contrast film 50 constitutes an alignment mark. The tantalum oxide film 60 including tantalum oxide is provided so as to cover the high-contrast film 50 without being exposed, and is continuously provided on the surface of the high-contrast film 50 and the side surface 44b and the upper surface 44a of the convex portion 44 of the marking pattern 40 . Furthermore, grooves 26 are formed along the tantalum oxide film 60 on the upper surface 44 a of the convex portion 44 of the marking pattern 40 .

In recent years, when the resist used for nanoimprint lithography cannot be removed from the die and remains after cleaning by sulfuric acid cleaning or alkali cleaning, the use of plasma ashes using oxygen-containing gas has been carried out. to be removed. On the other hand, Cr-based materials (Cr, CrN, etc.), Si-based materials (SiO ₂ , SiN ₂ , etc.), and Ta-based materials are used as constituent materials in the protective film for protecting the high-contrast film described in the above-mentioned patent documents. However, there is a problem that the protective film including these disappears together with the high-contrast film depending on the material at the time of plasma ashing. In addition, regarding the protective film containing Ta-based material, especially TaN, since the high-contrast film constituting the above-mentioned alignment marks or identification marks is the same as the etching gas, for example, chlorine-based gas, there is a problem when processing the high-contrast film. Danger of disappearing due to dry etching. Therefore, it is difficult to set up to cover the high-contrast film without being exposed.

On the other hand, the tantalum oxide film 60 containing tantalum oxide in the present invention has sufficiently high resistance to sulfuric acid cleaning or alkali cleaning for removing foreign substances such as resists used in nanoimprint lithography, and is relatively The resistance of plasma ashing using oxygen-containing gas to remove the remaining foreign matter that cannot be removed by these cleanings is also sufficiently high. Therefore, the tantalum oxide film 60 is not likely to disappear during sulfuric acid cleaning, alkali cleaning, and cleaning of the die using plasma ashing.

Furthermore, the tantalum oxide film 60 is different from the protective film containing TaN, and is different from the etching gas of the high-contrast film 50 , and therefore there is no fear of disappearing by dry etching when the high-contrast film 50 is processed.

Therefore, according to the present invention, by covering the high-contrast film with the tantalum oxide film, the reduction or disappearance of the high-contrast film can be sufficiently suppressed. Furthermore, in the method for producing a die for nanoimprinting of the present invention, since there is no fear of disappearing the tantalum oxide film when the high-contrast film is processed, it is easier to set up to cover the high-contrast film.

1. Tantalum oxide film

The above-mentioned tantalum oxide film is a film containing tantalum oxide provided on the surface of the above-mentioned high-contrast film so as to cover the above-mentioned high-contrast film.

Here, the above-mentioned tantalum oxide refers to, for example, a compound represented by TaOx such as TaO ₂ and Ta ₂ O ₅ .

In the above TaOx, x is preferably in the range of 2 to 5.

As the above-mentioned tantalum oxide, a small amount of O may be partially substituted with N, but the ratio of N substituted for O is preferably 0.1 at % or less, particularly preferably one in which O is not substituted by N. The reason for this is that when the ratio of N to replace O is increased, the tantalum oxide film may be lost by dry etching used in the case of processing the high-contrast film. The reason for this is that it becomes difficult to process the tantalum oxide film by dry etching.

Here, FIG. 2( a ) is a schematic cross-sectional view showing another example of the die for nanoimprinting of the present invention, and is a view showing an area corresponding to the area shown in FIG. 1( b ). Fig. 2(b) is a view of the table top structure shown in Fig. 2(a) from the top side of the main surface. The difference between the nanoimprint die 10 shown in FIG. 2 and the nanoimprint die 10 shown in FIG. 1 is that the bottom surfaces of the adjacent recesses 42 in the marking pattern 40 are different The tantalum oxide films 60 of 42a are separated from each other.

3( a ) is a schematic cross-sectional view showing another example of the die for nanoimprinting of the present invention, and is a view showing an area corresponding to the area shown in FIG. 1( b ). Fig. 3(b) is a view of the table top structure shown in Fig. 3(a) from the top side of the main surface. The difference between the nanoimprint die 10 shown in FIG. 3 and the nanoimprint die 10 shown in FIG. 1 is that the tantalum oxide film 60 is only provided on the bottom surface 42 a of the concave portion 42 of the marking pattern 40 The surface of the high-contrast film 50 disposed thereon.

As the tantalum oxide film, as shown in FIGS. 1 to 3 , as long as it is provided on the surface of the high-contrast film so as to cover the high-contrast film, it is not particularly limited, but it is preferably as shown in FIGS. 1 and 2 As shown on the surface of the high-contrast film and the upper surface of the convex portion of the pattern for marking, it is particularly preferred to be provided on the surface of the high-contrast film and the side and upper surface of the convex portion of the pattern for marking, Excellent for continuous setters. This is because the above-mentioned high-contrast film can be effectively covered without being exposed. Specifically, this is because, for example, as shown in FIGS. 1 and 2 , the tantalum oxide film is provided so as to be continuous with the surface of the high-contrast film and the side surface and the upper surface of the convex portion of the marking pattern. Even if the said high-contrast film protrudes to the side surface of the convex part of the said pattern for marking, the said high-contrast film can be covered without being exposed.

In addition, the above-mentioned tantalum oxide film is formed across the above-mentioned nanoimprint mold by, for example, sputtering or the like. Since the entire surface of the sheet is formed into a film, when it is provided on the surface of the high-contrast film and the upper surface of the convex portion of the pattern for marking, it is usually also provided on the side surface of the convex portion of the pattern for marking.

As the tantalum oxide film, as shown in FIGS. 2 and 3 , it is preferable that the tantalum oxide films provided on the bottom surfaces of a plurality of adjacent recesses in the marking pattern are separated from each other. Each of the high-contrast films provided on the bottom surfaces of the plurality of adjacent recesses may be covered with the tantalum oxide films separated from each other. The reason for this is that the above-mentioned light-transmitting base material is exposed between the above-mentioned high-contrast films, so that the above-mentioned high-contrast films can be easily recognized.

The thickness of the tantalum oxide film is not particularly limited as long as the reduction or disappearance of the high-contrast film can be sufficiently suppressed, but it is preferably within a range of 1 nm to 10 nm, particularly preferably within a range of 3 nm to 6 nm. This is because if the tantalum oxide film is too thin, the reduction or disappearance of the high contrast film cannot be sufficiently suppressed, and if the tantalum oxide film is too thick, when the tantalum oxide film is formed on the upper surface of the convex portion of the marking pattern, It becomes an obstacle when the said transfer pattern is transcribe|transferred to a to-be-transferred body.

2. High contrast film

The above-mentioned high-contrast film is provided on the bottom surface of the concave portion of the above-mentioned marking pattern. The above-mentioned high-contrast film constitutes a mark such as an alignment mark or an identification mark, for example.

The high-contrast film is not particularly limited as long as it is provided on the bottom surface of the concave portion of the marking pattern, and may be provided on the bottom surface of the concave portion of the marking pattern and the marking pattern. The side or upper surface of the convex portion of the marking pattern is preferably provided only on the bottom surface of the concave portion of the marking pattern as shown in FIGS. 1 to 3 . This is because if the high-contrast film is provided on the side or upper surface of the convex portion of the marking pattern, it is difficult to cover with the tantalum oxide film without being exposed, so it is difficult to suppress the reduction or disappearance of the high-contrast film. In addition, the reason is that the high contrast film is thicker than the tantalum oxide film. Therefore, if the high contrast film is provided on the upper surface of the convex portion of the marking pattern, the transfer pattern will be transferred to the target to be transferred. become a hindrance when printing.

The material of the high-contrast film is not particularly limited as long as it can constitute an optically recognizable mark. For example, a material having a refractive index different from that of the translucent base material with respect to light for recognizing the mark can be used. As such a material, for example, one containing one or two or more of metals and their oxides, nitrides, and oxynitrides can be mentioned. As said metal, Cr, Mo, Ta, W, Zr, Ti etc. are mentioned, for example. As such a material, Cr and a compound containing Cr (chromium nitride, chromium oxide, chromium carbide, chromium carbonitride, etc.) are preferable. The reason for this is that since the resistance to plasma ashing using an oxygen-containing gas is low, the effect of suppressing the reduction or disappearance of the film of the high-contrast film described above becomes remarkable.

The thickness of the high-contrast film is not particularly limited as long as an optically recognizable mark can be formed, but it is preferably set so that the transmittance of light with a wavelength of 365 nm becomes 10% or less. For example, when chromium (Cr) is used as the material of the high-contrast film, the thickness of the high-contrast film may be set to be 15 nm or more in order to set the transmittance of light with a wavelength of 365 nm to 10% or less.

3. Translucent substrate

The said translucent base material has a base part and the mesa structure provided in the main surface of the said base part.

(1) Table structure

The said mesa structure is the thing provided with the transcription|transfer pattern of the uneven|corrugated structure and the marking pattern of the uneven|corrugated structure on the main surface.

a. Pattern for marking

The said pattern for marking is a pattern which has an uneven|corrugated structure when the said translucent base material is observed in cross section. The above-mentioned pattern for marking constitutes, for example, a mark such as an alignment mark or an identification mark together with the above-mentioned high-contrast film.

Although it does not specifically limit as a shape of the said pattern for marking, For example, the pattern of the uneven|corrugated structure, such as a line and a space, is mentioned.

In the case where the above-mentioned marking pattern is a line and a gap as shown in FIG. 1, the depth of the concave portion of the above-mentioned concave-convex structure shown by D in FIG. The recesses have the same depth. In addition, the width of the concave portion and the width of the convex portion of the concave-convex structure are appropriately set according to the application of the pattern for marking.

b. Transfer pattern

The said transfer pattern is the pattern which has the uneven|corrugated structure when the said translucent base material is observed in cross section. The above-mentioned transfer pattern is a pattern that is transferred from the above-mentioned die for nanoimprinting to the object to be transferred using nanoimprint lithography.

The shape of the transfer pattern is not particularly limited, and examples thereof include patterns of concavo-convex structures such as lines and spaces, dots, holes, isolated spaces, isolated lines, columns, lenses, and steps.

The size of the transfer pattern is not particularly limited, and when the shape of the transfer pattern is a line and a gap as shown in FIG. 1 , for example, the line width is about 30 nm, and the height of the convex portion of the concave-convex structure is 60nm or so. Moreover, when the shape of the said transfer pattern is a column shape, for example, the diameter is about 50 nm, and the height of the convex part of the said uneven|corrugated structure is about 60 nm.

c. Countertop structure

Here, FIG. 4( a ) is a schematic cross-sectional view showing another example of the die for nanoimprinting of the present invention, and is a view showing an area corresponding to the area shown in FIG. 1( b ). Fig. 4(b) is a view of the table top structure shown in Fig. 4(a) from the top side of the main surface. The nanoimprint die 10 shown in FIG. 4 is different from the nanoimprint die 10 shown in FIG. 1 in that the upper surface 44a of the convex portion 44 of the marking pattern 40 is not along the tantalum oxide film. 60 provides slot 26.

As the mesa structure, as shown in FIG. 1, a groove may be provided along the tantalum oxide film on the main surface of the mesa structure, or as shown in FIG. 4, the groove may not be provided, but it is preferably provided with The slot above. The reason for this is that since the tantalum oxide film is transparent, it is difficult to directly identify and determine the presence or absence of the tantalum oxide film. The presence or absence of the tantalum oxide film is determined, so that the presence or absence of the tantalum oxide film can be easily determined. Furthermore, the reason is that the existence of the grooves indicates that the high-contrast film provided on the upper surface of the convex portion of the transfer pattern has been surely removed during the production of the die. It is judged that the above-mentioned high-contrast film does not become a hindrance when transferring the above-mentioned transfer pattern to a to-be-transferred body.

In addition, the so-called grooves are as long as those described in the following "B. Manufacturing method of a die for nanoimprinting 2. Manufacturing method of a die for nanoimprinting (1) Manufacturing method of a die for nanoimprinting ” in the manufacturing method described in the item of “The second etching step” is formed on the main surface of the mesa structure when etching is performed, it is not particularly limited, and it is not limited to the concave removed portion as shown in FIG. 1 . , and can also be a step-shaped removal part.

Here, FIG.5(a) is a schematic cross-sectional view which shows another example of the die for nanoimprinting of this invention. Fig. 5(b) is an enlarged view within the dotted frame shown in Fig. 5(a). FIG. 5( c ) is a view obtained from a plan view of the table top structure shown in FIG. 5( b ) from the main surface side.

As shown in FIGS. 5( a ) and 5 ( b ), the die 10 for nanoimprinting includes a translucent substrate 20 having a base portion 21 and a mesa structure 22 provided on the main surface 21 a of the base portion 21 . The mesa structure 22 includes a first stepped structure 27 provided on the main surface 21 a of the base portion 21 and a second stepped structure 28 provided on the main surface 27 a of the first stepped structure 27 . On the main surface 28a of the second step structure 28, the transfer pattern 30 of the concavo-convex structure and the marking pattern 40 of the concavo-convex structure are provided. Moreover, the recessed part 25 containing the 2nd level structure 28 and the 1st level structure 27 in plan view is provided in the surface on the opposite side to the main surface 21a of the base part 21. FIG. Furthermore, a high-contrast film is provided on the die 10 for nanoimprinting as in the die shown in FIG. 1 . 50 and the tantalum oxide film 60.

As the above-mentioned mesa structure, as shown in FIG. 1 , it may have a single step structure, and the above-mentioned transfer pattern and the above-mentioned marking pattern are provided on the main surface of the single step structure, or may be as shown in FIG. 5 . It shows a 1st level structure and the 2nd level structure provided in the main surface of the said 1st level structure, and the said transfer pattern and the said marking pattern were provided in the principal surface of the said 2nd level structure.

The shape of the above-mentioned mesa structure in plan view is not particularly limited, and for example, it may be a rectangular shape as shown in FIG. 1( c ). Moreover, the height of the said mesa structure shown by M in FIG.1(b) differs according to a use etc., for example, it is about 10 micrometers - 50 micrometers. Furthermore, the vertical and horizontal lengths of the above-mentioned table top structure having a rectangular shape in plan view vary depending on the application and the like, and are, for example, within a range of 20 mm to 35 mm.

Moreover, in the above-mentioned mesa structure including the above-mentioned first level structure and the above-mentioned second level structure, the shapes of the first level structure and the second level structure in plan view are not particularly limited, and, for example, may be As shown in Fig. 5(c), it has a rectangular shape. In addition, the height of the first step structure indicated by M1 in FIG. 5(b) varies depending on the application, for example, within the range of 10 μm to 50 μm, the height of the first step structure having a rectangular shape in plan view. The vertical and horizontal lengths are the same as those of the above-mentioned table top structure. The height of the above-mentioned second step structure indicated by M2 in FIG. 5( b ) varies depending on the application and the like, but is, for example, within a range of 1 μm to 5 μm. Furthermore, the vertical and horizontal lengths of the above-mentioned second step structure having a rectangular shape in plan view vary depending on applications and the like, and are, for example, within a range of 18 mm to 33 mm.

As a formation method of the said mesa structure, the said 1st level|step difference structure, and the said 2nd level|step difference structure, the wet etching etc. using an etching mask are mentioned, for example.

(2) Base

The said base part is provided with the said mesa structure on the main surface.

a. Depressed part

When the above-mentioned mesa structure has the above-mentioned single step structure, as the above-mentioned base portion, as shown in FIG. It may not be provided with the above-mentioned concave portion, but it is preferably provided with the above-mentioned concave portion. The reason for this is that when the transfer pattern of the nanoimprint die is brought into close contact with the curable resin layer coated on the surface of the transfer object, the nanometer pressure is increased by increasing the air pressure in the depression. The printing die is bent and air is prevented from being trapped between the transfer pattern and the curable resin layer.

In addition, when the mesa structure includes the first step structure and the second step structure, as the base portion, as shown in FIG. 5, a plan view including Although the recessed part of the said 2nd step structure may not be provided with the said recessed part, it is preferable that it is provided with the said recessed part. The reason for this is that, similarly to the above, it is possible to suppress air entrapment between the transfer pattern and the curable resin layer. Furthermore, as the said recessed part, as shown in FIG. 5, it is preferable that it contains the said 1st step structure in plan view. The reason for this is that, when the air pressure in the recessed portion is increased to bend the die for nanoimprinting, the following arrangement in the first stage can be suppressed. Defects such as the light-shielding part of the main surface of the poor structure and the peeling of the tantalum oxide film.

The shape of the recessed portion in plan view is not particularly limited as long as it includes the second step structure in plan view, and for example, it may be circular. Moreover, the depth of the said recessed part is in the range of 4 mm - 5.5 mm, for example, and the diameter of the said circular recessed part is about 80 mm, for example.

As a formation method of the said recessed part, a machining etc. are mentioned, for example, What is necessary is just to select suitably according to the shape and size of the said recessed part, the material of the said translucent base material, etc.

b. base

The shape of the base portion in plan view is not particularly limited, and is usually a rectangular shape. In this case, the vertical and horizontal lengths of the above-mentioned base are different depending on the application, etc., for example, in the range of 142 mm to 162 mm. In addition, although the thickness of the said base part differs depending on a material, a use, etc., it is in the range of 0.5 mm - 10 mm, for example.

(3) Others

As a material which comprises the said translucent base material, synthetic quartz, soda glass, fluorite, calcium fluoride, etc. are mentioned, for example. Among them, synthetic quartz is preferably used because it has a high performance and stable quality in the substrate for forming a die for nanoimprinting, and can form a fine transfer pattern with high precision. As light transmittance of the said light-transmitting base material, it is preferable that the transmittance|permeability of the light in the range of wavelength 300nm - 450nm is 85% or more.

4. Other

As the above-mentioned mesa structure including the above-mentioned first step structure and the above-mentioned second step structure, the above-mentioned die for nanoimprinting is preferably a main surface 27a of the first step structure 27 as shown in FIG. 5 . The light shielding portion 70 is provided in the region around the second step structure 28, and the tantalum oxide film 60 is provided on the main surface 70a of the light shielding portion 70 so as not to be exposed. The reason for this is that the above-mentioned light shielding portion can prevent the exposure light from being irradiated to an unintended area during photoimprinting, and it is possible to perform sulfuric acid cleaning, alkali cleaning, and cleaning using plasma ashing. The reduction or disappearance of the light shielding portion film is sufficiently suppressed by the tantalum oxide film.

Here, FIG. 6 is a schematic cross-sectional view showing another example of the die for nanoimprinting of the present invention, and is a view showing an area corresponding to the area shown in FIG. 5( a ). In the nanoimprint die 10 shown in FIG. 6, the main surface 70a and the side surface 70b of the light shielding portion 70 are continuously provided so as not to be exposed.

The tantalum oxide film provided on the main surface of the light shielding portion is preferably provided on the main surface and the side surface of the light shielding portion so as to cover the main surface and the side surface of the light shielding portion as shown in FIG. 6 . This is because the influence of sulfuric acid cleaning, alkali cleaning, and plasma ashing from the side surface of the light shielding portion can be suppressed, so that the reduction or disappearance of the film of the light shielding portion can be effectively suppressed.

The light-shielding portion is not particularly limited as long as it can prevent the exposure light from being irradiated to an unintended area during photoimprinting, and may have a single-layer structure including only a light-shielding film, but is preferably as shown in the figure. 5 and FIG. 6, it has a multilayer structure in which the light-shielding film 80 and the high-contrast film 50 are laminated in this order. The reason for this is that the light-shielding property of the multilayer structure is higher than that of the single-layer structure, so that it is possible to effectively suppress unintended irradiation of exposure light during photoimprinting. area.

Moreover, it is preferable that a light-shielding part is formed not only in the area|region surrounding the 2nd level|step difference structure in the main surface of a 1st level|step difference structure, but also in the side surface of a 1st level|step difference structure. Furthermore, in this case, a tantalum oxide film may be formed on the light shielding portion in the side surface of the first step structure.

Examples of the material of the light-shielding film include metals such as Al, Ni, Co, Cr, Ti, Ta, W, Mo, Sn, Zn, Si, and the like, and oxides and nitrides thereof may also be used. , alloys, etc. As light-shielding property of the said light-shielding film, the transmittance|permeability of the light beam in the range of a wavelength of 365 nm is preferable 1% or less, and it is especially preferable that it is 0.1% or less.

The thickness of the light-shielding film is not particularly limited as long as it can prevent the exposure light from being irradiated to an unintended area during photoimprinting. For example, when Cr is used as the material of the light-shielding film, it is only 15 nm. within the above range. The range of 35 nm to 1000 nm is particularly preferable, and the range of 55 nm to 1000 nm is particularly preferable. The reason for this is that the transmittance of light in the range of wavelength 365 nm can be made 1% or less and 0.1% or less, respectively, by making the thickness of the light-shielding film more than the lower limit of these ranges.

Examples of methods for forming the light-shielding film include PVD (physical vapor deposition) such as vacuum evaporation, sputtering, and ion plating, plasma CVD, thermal CVD, And optical CVD methods such as CVD (chemical vapor deposition, chemical vapor deposition), etc., as well as coatings, dyes, pigments, etc. coating.

Since the high-contrast film in the above-mentioned multilayer structure is the same as the high-contrast film described in the item of the above-mentioned "2. High-contrast film", the description here is omitted.

B. Manufacturing method of die for nanoimprint

The method for producing a die for nanoimprinting of the present invention is characterized by comprising: a preparation step of preparing a die-forming member including a translucent base material and a high-contrast film, the translucent The flexible substrate has a base and a mesa structure arranged on the main surface of the base, and a transfer pattern of the concave-convex structure and a marking pattern of the concave-convex structure are arranged on the main surface of the mesa structure, and the high-contrast film is arranged on the light-transmitting structure. The entire surface of the main surface side of the flexible base material; the first resin layer forming step, which is to use the marking pattern area provided with the above-mentioned marking pattern to become a thin film, and the transfer pattern area provided with the above-mentioned transfer pattern to become a thick film. In the method, a first resin layer is formed on the marking pattern and the transfer pattern; and a first etching step is performed by etching the die-forming member on which the first resin layer is formed, at least on the The high-contrast film remains on the bottom surface of the concave portion of the marking pattern and the transfer pattern area, and the other parts of the high-contrast film are removed; the step of forming a tantalum oxide film is performed on the above-mentioned die after the above-mentioned first etching step. A tantalum oxide film is formed on the entire main surface side of the forming member; and a second resin layer forming step is formed on the marking pattern in such a way that the marking pattern region becomes a thick film and the transfer pattern region becomes a thin film. A second resin layer is formed on the tantalum oxide film in the pattern area and the transfer pattern area; in a second etching step, the mold forming member on which the second resin layer is formed is etched to form a second resin layer. The tantalum oxide film remains on at least the surface of the high contrast film, and other parts of the tantalum oxide film are removed; and a third etching step is performed by performing etching using the remaining tantalum oxide film as a mask, Then, the high-contrast film disposed in the above-mentioned transfer pattern area is removed.

An example of the manufacturing method of the die for nanoimprinting of the present invention will be described with reference to the drawings. FIGS. 7( a ) to 9 ( c ) are schematic cross-sectional views showing an example of a method for producing a die for nanoimprinting of the present invention.

First, as shown in FIG. 7( a ), a die-forming member 1 is prepared. The die-forming member 1 includes a translucent base 20 having a base portion 21 and a mesa provided on the main surface 21 a of the base portion 21 . structure 22, and the main surface 22a of the mesa structure 22 is provided with the transfer pattern 30 of the concave-convex structure and the marking pattern 40 of the concave-convex structure; The top surface 44a of the convex portion 44 and the bottom surface 32a of the concave portion 32 of the transfer pattern 30 and the top surface 34a of the convex portion 34 are provided.

Next, as shown in FIG. 7( b ), a thin film 91 a of the first resin layer 91 is formed on the high-contrast film 50 provided on the bottom surface 42 a of the concave portion 42 of the marking pattern 40 and the high contrast film 50 provided on the upper surface 44 a of the convex portion 44 . A thick film 91b of the first resin layer 91 which is thicker than the film 91a is formed on the high contrast film 50 on the bottom surface 32a of the concave portion 32 of the transfer pattern 30 and the upper surface 34a of the convex portion 34.

In this case, first, on the high contrast film 50 provided on the bottom surface 42a of the concave portion 42 of the marking pattern 40 and the upper surface 44a of the convex portion 44, and on the bottom surface 32a and convex portion of the concave portion 32 of the transfer pattern 30 Resin is dripped onto the high contrast film 50 on the upper surface 34a of the portion 34 . Next, after hardening the resin in a state of being pressed against the resin layer thickness defining die 100, the resin layer thickness defining die 100 is released from the mold. Thereby, the 1st resin layer 91 prescribed|regulated so that the thickness H1 of the thin film 91a and the thickness H2 of the thick film 91b shown in FIG.7(b) may satisfy|fill H1<H2 is formed.

Next, as shown in FIG.7(c), the 1st resin layer 91 is partially removed by the etch-back method by performing dry etching using an oxygen-based gas. In this case, as described above, the thickness H1 of the thin film 91a and the thickness H2 of the thick film 91b are regulated so as to satisfy H1<H2, thereby enabling a high contrast ratio to be provided on the bottom surface 42a of the recess 42 of the marking pattern 40 The light-transmitting substrate side of the thin film 91a formed on the film 50 and the thick film 91b formed on the high-contrast film 50 disposed on the bottom surface 32a of the concave portion 32 and the upper surface 34a of the convex portion 34 of the transfer pattern 30 The translucent base material side remains, and the other part of the 1st resin layer 91 is removed.

Next, as shown in FIG. 8( a ), using the remaining thin film 91 a and thick film 91 b of the first resin layer 91 as a mask, dry etching using a chlorine-based gas is performed, whereby the pattern 40 for marking is formed. The high-contrast film 50 remains on the bottom surface 42a of the concave portion 42 and the bottom surface 32a of the concave portion 32 of the transfer pattern 30 and the high-contrast film 50 on the upper surface 34a of the convex portion 34, and the high-contrast film 50 will be provided on the top surface 44a of the convex portion 44 of the marking pattern 40. The membrane 50 is removed.

Next, as shown in FIG. 8( b ), after removing the remaining first resin layer 91 by wet cleaning or dry etching using an oxygen-based gas, the remaining first resin layer 91 is covered so as not to be exposed. In the form of the high contrast film 50 on the bottom surface 42a of the concave portion 42, the tantalum oxide film 60 is formed continuously with the surface of the high contrast film 50 and the side surface 44b and the upper surface 44a of the convex portion 44 of the marking pattern 40. In addition, a tantalum oxide film 60 is formed on the surface of the high contrast film 50 remaining on the bottom surface 32a of the concave portion 32 of the transfer pattern 30 and the upper surface 34a of the convex portion 34 on the surface of the high contrast film 50 .

Next, as shown in FIG. 8( c ), on the bottom surface 42a of the recessed portion 42 remaining in the marking pattern 40 A thick film 92a of the second resin layer 92 is formed on the surface of the high-contrast film 50 and the tantalum oxide film 60 formed on the upper surface 44a of the convex portion 44 of the marking pattern 40, and the thick film 92a of the second resin layer 92 remains on the bottom surface of the concave portion 32 of the transfer pattern 30 32a and the tantalum oxide film 60 formed on the surface of the high contrast film 50 on the upper surface 34a of the convex portion 34 is formed with a thin film 92b of the second resin layer 92 which is thinner than the thicker film 92a. In addition, at this time, the thick film 92a of the second resin layer 92 is formed on the inner side of the formation region R of the thin film 91a of the first resin layer 91 shown in FIG. 7(b) in plan view.

In this case, first, on the tantalum oxide film 60 formed on the surface of the high contrast film 50 remaining on the bottom surface 42a of the concave portion 42 of the marking pattern 40 and the upper surface 44a of the convex portion 44 of the marking pattern 40, and Resin is dripped on the tantalum oxide film 60 formed on the surface of the high contrast film 50 on the bottom surface 32a of the concave portion 32 of the transfer pattern 30 and the high contrast film 50 on the upper surface 34a of the convex portion 34. Next, after hardening the resin in a state of being pressed against the resin layer thickness defining die 100, the resin layer thickness defining die 100 is released from the mold. As a result, the second resin layer 92 is formed so that the thickness H3 of the thick film 92a and the thickness H4 of the thin film 92b shown in FIG. 8( c ) satisfy H3>H4.

Next, as shown in FIG. 9( a ), the second resin layer 92 is partially removed by dry etching using an oxygen-based gas and an etch-back method. In this case, as described above, the thickness H3 of the thick film 92a and the thickness H4 of the thin film 92b are regulated so as to satisfy H3>H4, whereby a high contrast ratio remaining on the bottom surface 42a of the recessed portion 42 of the marking pattern 40 can be obtained. The surface of the film 50 and the light-transmitting substrate side of the thick film 92a formed on the tantalum oxide film 60 formed on the upper surface 44a of the convex portion 44 of the marking pattern 40 remain, and the other parts of the thick film 92a and the thin film 92b remain. remove. In addition, at this time, as described above, the thick film 92a of the second resin layer 92 is formed in the inner region of the formation region R of the thin film 91a of the first resin layer 91 in plan view, so that the convex portion 44 of the marking pattern 40 is formed The upper surface 44a is formed by The outer peripheral portion 61 of the tantalum oxide film 60 is exposed from the thick film 92 a of the second resin layer 92 .

Next, as shown in FIG. 9( b ), using the remaining thick film 92 a of the second resin layer 92 as a mask, dry etching using a fluorine-based gas is performed, thereby making the remaining in the recessed portion of the marking pattern 40 . The tantalum oxide film 60 formed continuously on the surface of the high contrast film 50 on the bottom surface 42a of the marking pattern 40 and the side surface 44b and the upper surface 44a of the convex portion 44 of the marking pattern 40 remains, and the other parts of the tantalum oxide film 60 are removed. At this time, since the outer peripheral portion 61 of the tantalum oxide film 60 formed on the upper surface 44a of the convex portion 44 of the marking pattern 40 is exposed from the thick film 92a of the second resin layer 92, the outer peripheral portion 61 of the tantalum oxide film 60 is removed. , and the portion on the upper surface 44a side of the convex portion 44 of the marking pattern 40 is removed in the region of the outer peripheral portion 61 . Thereby, the groove 26 is formed along the area|region which becomes the thick film 92a of the 2nd resin layer 92 in the upper surface 44a of the convex part 44 of the pattern 40 for marking.

Next, as shown in FIG. 9( c ), after removing the remaining thick film 92 a of the second resin layer 92 by wet cleaning or dry etching using an oxygen-based gas, the remaining tantalum oxide film 60 is removed. The high-contrast film 50 provided on the bottom surface 32a of the concave portion 32 and the upper surface 34a of the convex portion 34 of the transfer pattern 30 is removed by dry etching using a chlorine-based gas as a mask. In this way, the nanoimprint die 10 shown in FIG. 1 can be manufactured.

Therefore, according to the present invention, a die for nanoimprinting capable of sufficiently suppressing the reduction or disappearance of the film of the high-contrast film can be produced. Furthermore, since there is no possibility that the tantalum oxide film will disappear when the high-contrast film is processed, it is easy to provide the high-contrast film so as not to be exposed.

1. Each step of the manufacturing method of the die for nano-imprinting

Hereinafter, each step of the manufacturing method of the die for nanoimprint will be described.

(1) Preparation steps

In the above-mentioned preparation step, a member for forming a die is prepared, and the member for forming a die is provided with: a light-transmitting base material having a base portion and a mesa structure provided on the main surface of the base portion, and on the main surface of the mesa structure A transfer pattern with a concavo-convex structure and a marking pattern with a concavo-convex structure are provided; and a high-contrast film provided on the entire surface of the main surface side of the translucent base material.

The above-mentioned light-transmitting base material is the same as the light-transmitting base material described in the item of "A. Nanoimprinting die 3. Light-transmitting base material" above, so the description here is omitted.

The above-mentioned high-contrast film is different from the above-mentioned "A. Nanometer" except that it is provided on the bottom surface of the concave portion and the top surface of the convex portion of the pattern for marking and the bottom surface of the concave portion and the top surface of the convex portion of the transfer pattern. The high-contrast film described in the item of the die for imprint 2. High-contrast film" is the same, so the description here is omitted.

(2) Step of forming the first resin layer

In the above-mentioned first resin layer forming step, the pattern area for marking on which the pattern for marking is provided becomes a thin film, and the area for the transfer pattern on which the pattern for transfer is provided becomes a thick film, and the pattern for marking and the A first resin layer is formed on the transfer pattern.

Here, the thickness of the thin film of the first resin layer refers to the thickness of the thin film of the first resin layer in the concave portion of the marking pattern shown by H1 in FIG. 7(b), and the so-called first The thickness of the thick film of the resin layer refers to the thickness of the thick film of the first resin layer in the concave portion of the transfer pattern shown by H2 in FIG. 7(b).

The thickness of the thin film of the first resin layer and the thickness of the thick film of the first resin layer are appropriately set according to etching conditions.

As a material of the said 1st resin layer, if it is a curable resin used for nanoimprint lithography, it will not specifically limit, For example, a thermosetting resin and a photocurable resin are mentioned. Especially preferable is a photocurable resin, and especially preferable is an ultraviolet curable resin.

(3) The first etching step

In the above-mentioned first etching step, by etching the above-mentioned die-forming member on which the above-mentioned first resin layer is formed, the above-mentioned high-contrast film is applied to at least the bottom surface of the concave portion of the above-mentioned pattern for marking and the area of the above-mentioned transfer pattern. Residual, other parts of the above-mentioned high-contrast film are removed.

The above-mentioned first etching step is not particularly limited. Generally, as shown in FIG. 7( c ) and FIG. 8( a ), it includes a first resin layer removal step and a high contrast film removal step. The thin film of the first resin layer formed on the high-contrast film on the bottom surface of the concave portion of the marking pattern is provided on the translucent substrate side, and on the bottom surface and convex portion of the concave portion of the transfer pattern The thick film of the first resin layer formed on the surface of the high-contrast film remains on the light-transmitting substrate side, and other parts of the first resin layer are removed. The high-contrast film removal step is performed by removing the remaining The above-mentioned first resin layer is used for the etching of the mask, and is arranged on the bottom surface of the concave portion of the above-mentioned marking pattern and the bottom surface and convex portion of the concave portion of the above-mentioned transfer pattern. The above-mentioned high-contrast film on the surface remained, and the other parts of the above-mentioned high-contrast film were removed.

The method of removing the first resin layer is not particularly limited as long as the first resin layer can be left on the light-transmitting base material side and the other parts of the first resin layer can be removed, and etch back can be used. Method of dry etching, etc. As a gas used for the said dry etching, an oxygen-type gas etc. are mentioned, for example.

As a method of etching the above-mentioned high-contrast film, dry etching or wet etching may be used, but dry etching is preferred. As a gas used for the said dry etching, a chlorine type gas etc. are mentioned, for example.

(4) Tantalum oxide film forming step

In the above-mentioned tantalum oxide film forming step, a tantalum oxide film is formed on the entire main surface side of the above-mentioned die-forming member subjected to the above-mentioned first etching step.

The above-mentioned tantalum oxide film is the same as the tantalum oxide film described in the item of "A. Die for nanoimprint 1. Tantalum oxide film", so the description here is omitted.

The method for forming the tantalum oxide film is not particularly limited, and examples thereof include PVD (physical vapor deposition) such as vacuum vapor deposition, sputtering, and ion plating, plasma CVD, thermal CVD, CVD (chemical vapor deposition) such as optical CVD method, etc., as well as coating of paints, dyes, and pigments, etc.

In addition, the said tantalum oxide film formation process is performed after removing the said 1st resin layer which remained.

(5) Second resin layer forming step

In the second resin layer forming step, the tantalum oxide film formed on the marking pattern region and the transfer pattern region is formed such that the marking pattern region becomes a thick film and the transfer pattern region becomes a thin film A second resin layer is formed thereon.

Here, the thickness of the thick film of the second resin layer refers to the thickness of the thick film of the second resin layer in the concave portion of the marking pattern shown by H3 in FIG. The thickness of the film of the second resin layer refers to the thickness of the film of the second resin layer in the concave portion of the transfer pattern shown by H4 in FIG. 8(c).

The thickness of the thin film of the second resin layer and the thickness of the thick film of the second resin layer are appropriately set according to etching conditions.

Since the material of the said 2nd resin layer is the same as that of the said 1st resin layer, description here is abbreviate|omitted.

(6) Second etching step

In the above-mentioned second etching step, the above-mentioned tantalum oxide film formed on at least the surface of the above-mentioned high-contrast film is left by etching the above-mentioned die-forming member on which the above-mentioned second resin layer is formed, and the above-mentioned tantalum oxide is removed. The rest of the membrane is removed.

The above-mentioned second etching step is not particularly limited. Generally, as shown in FIGS. 9( a ) and 9 ( b ), it includes a second resin layer removal step and a tantalum oxide film removal step, and the second resin layer removal step is to make residual The thick film of the second resin layer formed on the tantalum oxide film formed on the surface of the high-contrast film on the bottom surface of the concave portion of the marking pattern remains on the light-transmitting substrate side, and the second resin The other part of the thick film of the layer and the thin film of the second resin layer are removed, and the tantalum oxide film removal step is performed by etching the remaining thick film of the second resin layer as a mask, so that the marks remaining on the above-mentioned marks are etched. The remaining portion of the tantalum oxide film was removed with the remaining portion of the tantalum oxide film formed on the surface of the high-contrast film on the bottom surface of the recessed portion of the pattern.

As a method of removing the second resin layer, as long as the thick film of the second resin layer can be left on the light-transmitting base material side and the other parts of the thick film of the second resin layer and the second resin layer can be removed. The thin film removal is not particularly limited, and dry etching using an etch-back method, etc. can be mentioned. As a gas used for the said dry etching, an oxygen-type gas etc. are mentioned, for example.

As a method of etching the tantalum oxide film, dry etching or wet etching may be used, but dry etching is preferred. As a gas used for the said dry etching, a fluorine type gas etc. are mentioned, for example.

(7) The third etching step

In the above-mentioned third etching step, the high-contrast film provided in the above-mentioned transfer pattern region is removed by performing etching using the remaining above-mentioned tantalum oxide film as a mask.

As the method of etching the above-mentioned high-contrast film, since it is the same as the above-mentioned first etching step, the description here is omitted.

In addition, the 2nd removal process of the said high contrast film may be performed after removing the remaining said 2nd resin layer, and may be performed before these removals, but it is usually performed after these removals.

2. Manufacturing method of die for nanoimprint

Hereinafter, the manufacturing method of the die for nanoimprinting of the present invention will be described.

(1) Manufacturing method of die for nanoimprint

A preferred aspect of the method for producing the above-mentioned die for nanoimprinting will be described.

As a method of manufacturing the above-mentioned die for nanoimprinting, preferably, as shown in FIGS. 7( c ) and 8( a ) and FIGS. 9( a ) and 9 ( b ), In the above-mentioned first etching step, in the pattern for marking, the contrast film is left only on the bottom surface of the concave portion, and the other parts of the contrast film are removed, and in the second etching step, the surface of the high-contrast film is made And the said tantalum oxide film formed on the upper surface of the convex part of the said marking pattern remains. The reason for this is that, as shown in FIGS. 1 and 2 , the above-mentioned die for nanoimprinting can be produced in which, in the above-mentioned pattern for marking, the above-mentioned contrast film is provided only on the bottom surface of the above-mentioned concave portion, and the above-mentioned contrast film is provided on the above-mentioned high level. The above-mentioned tantalum oxide film is provided on the surface of the contrast film and the upper surface of the convex portion of the above-mentioned pattern for marking.

Furthermore, as a method for producing such a die for nanoimprinting, the following production method is particularly preferred method, that is, as shown in FIGS. 8( c ) to 9 ( b ), in the second resin layer forming step, the region that becomes the thick film of the second resin layer is set as the first and second resin layer in plan view. On the inner side of the thin film region of the resin layer, in the second etching step, by performing the above etching, grooves are formed on the main surface of the mesa structure along the thick film region of the second resin layer. The reason for this is that the above-mentioned die for nanoimprinting can be produced by recognizing the existence or absence of the grooves to determine the presence or absence of the tantalum oxide film.

(2) Method for manufacturing a die for nanoimprinting with a mesa structure including a first-level structure and a second-level structure

As a method for producing the above-mentioned die for nanoimprinting, preferably, in the above-mentioned preparation step, the above-mentioned member for forming a die is prepared, in which the above-mentioned mesa structure has a structure provided on the above-mentioned The first step structure on the main surface of the base and the second step structure provided on the main surface of the first step structure, the transfer pattern and the marking pattern are provided on the main surface of the second step structure , and further has a light shielding portion provided on the main surface of the first stepped structure in a region around the second stepped structure, and in the first resin layer forming step, the above-mentioned light shielding portion is also formed on the above-mentioned light shielding portion. 1. A resin layer in which the light-shielding portion remains in the first etching step, the tantalum oxide film is formed on the main surface of the light-shielding portion in the tantalum oxide film forming step, and in the second resin layer forming step, The thick second resin layer is also formed on the tantalum oxide film formed on the main surface of the light-shielding portion, and the tantalum oxide film formed on the main surface of the light-shielding portion is left in the second etching step. Hereinafter, the manufacturing method will be described with reference to the drawings.

FIGS. 10( a ) to 12 ( c ) show another method of manufacturing the die for nanoimprinting of the present invention Example of a schematic step-by-step cross-sectional view.

First, as shown in FIG. 10( a ), the die-forming member 1 is prepared. In the die-forming member 1 , the mesa structure 22 has the first step structure 27 provided on the main surface 21 a of the base portion 21 and the The second level structure 28 of the main surface 27a of the first level structure 27 is provided with the transfer pattern 30 of the uneven structure and the marking pattern 40 of the uneven structure on the principal surface 28a of the second level structure 28, and further The light shielding portion 70 having the region provided around the second step structure 28 in the main surface 27a of the first step structure 27 has the same die-forming member as shown in FIG. 7(a) in addition to the above-mentioned aspects. 1 The same composition. Furthermore, the light-shielding portion 70 has a multilayer structure in which the light-shielding film 80 and the high-contrast film 50 are laminated in this order.

Next, as shown in FIG. 10( b ), the thin film 91 a and the thick film 91 b of the first resin layer 91 are formed in the same manner as in the step shown in FIG. The film 91c for light shielding parts.

In this case, first, like the step shown in FIG. Next, as shown in FIG.10(b), after hardening resin in the state pressed against the die 100 for resin layer thickness specification, the die 100 for resin layer thickness specification is mold-released. Thereby, the thin film 91a of the 1st resin layer 91, the thick film 91b, and the film 91c for light shielding parts are formed.

Next, as shown in FIG. 10( c ), the first resin layer 91 is partially removed by dry etching using an oxygen-based gas and an etch-back method. In this case, the steps shown in Figure 7(c) can be Similarly, the thin film 91a of the first resin layer 91 and the thick film 91b are left on the light-transmitting base side, and the light-shielding film 91c of the first resin layer 91 is left on the light-transmitting base side. Other parts removed.

Next, as shown in FIG. 11( a ), using the remaining thin film 91 a of the first resin layer 91 , the thick film 91 b , and the film 91 c for light-shielding portions as masks, dry etching using a chlorine-based gas is performed, thereby, Similar to the step shown in FIG. 8( a ), the high-contrast film 50 is left, and the high-contrast film 50 in the light shielding portion 70 is left, and the other parts of the high-contrast film 50 are removed.

Next, as shown in FIG. 11(b), after removing the remaining first resin layer 91, a tantalum oxide film 60 is formed in the same manner as in the step shown in FIG. In the form of the main surface 70a and the side surface 70b, the tantalum oxide film 60 is formed continuously with the main surface 70a and the side surface 70b of the light shielding portion 70 .

Next, as shown in FIG. 11( c ), a thick film 92 a and a thin film 92 b of the second resin layer 92 are formed in the same manner as in the step shown in FIG. On the tantalum film 60, a thick film 92c for the light shielding portion of the second resin layer 92 which is thicker than the thin film 92b is formed.

In this case, first, in the same manner as in the step shown in FIG. 8( c ), resin is dropped on the regions of the marking pattern 40 and the transfer pattern 30 , and the tantalum oxide film formed on the main surface 70 a of the light shielding portion 70 is Add resin dropwise to 60. Next, after hardening the resin in a state of being pressed against the resin layer thickness defining die 100, the resin layer thickness defining die 100 is released from the mold. Thereby, the thickness H3 of the thick film 92a shown in FIG. 11(c), the thickness H4 of the thin film 92b, and the thickness H6 of the thick film 92c for the light shielding portion are formed so as to satisfy The second resin layer 92 defined in the manner of H3>H4 and H6>H4.

Next, as shown in FIG. 12( a ), the second resin layer 92 is partially removed by dry etching using an oxygen-based gas and an etch-back method. In this case, as described above, the thickness of each resin layer is defined in such a manner that H3>H4 and H6>H4 are satisfied, whereby the thick film 92a can be transparent to light in the same manner as in the step shown in FIG. 9(a). The transparent base material side is left, and the light-transmitting base material side of the thick film 92c for light shielding parts is left, and the other part of the resin layer is removed.

Next, as shown in FIG. 12( b ), using the remaining thick film 92 a of the second resin layer 92 and the thick film 92 c for the light shielding portion as a mask, dry etching using a fluorine-based gas is performed. In the step shown in (b), the tantalum oxide film 60 remains, and the tantalum oxide film 60 formed on the main surface 70a of the light shielding portion 70 remains, and the other parts of the tantalum oxide film 60 are removed.

Next, as shown in FIG. 12( c ), after removing the remaining thick film 92 a of the second resin layer 92 and the thick film 92 c of the light shielding portion of the second resin layer 92 , the procedure is the same as that shown in FIG. 9( b ). The high contrast film 50 is removed. In this way, the nanoimprint die 10 shown in FIG. 5 is manufactured. In addition, the removal of the high-contrast film 50 may be performed after removing the thick film 92c of the thick film 92a of the remaining second resin layer 92 for the light-shielding portion, but it is usually performed after the removal.

Therefore, as a method for manufacturing the above-mentioned die for nanoimprinting, a method for manufacturing a die for nanoimprinting in which the above-mentioned mesa structure includes a first step structure and a second step structure is preferable. The reason for this is that the light-shielding portion can prevent the exposure light from being irradiated to an unintended area during photoimprinting, and the tantalum oxide film can suppress the reduction or disappearance of the film of the light-shielding portion. Die for nanoimprinting.

Hereinafter, each step of the manufacturing method of the die for nanoimprint having the above-mentioned mesa structure including the first step structure and the second step structure will be described.

a. Preparation steps

In the above-mentioned preparation step, the above-mentioned die-forming member is prepared. In the above-mentioned die-forming member, the mesa structure has a first level structure provided on the main surface of the base portion and a main structure provided on the first level structure. The second step structure of the surface, wherein the transfer pattern and the marking pattern are provided on the main surface of the second step structure, and further have the second step provided on the main surface of the first step structure The light-shielding part of the area around the poor structure.

The above-mentioned mesa structure having the above-mentioned first stepped structure and the above-mentioned second stepped structure is the same as the above-mentioned "A. Nanoimprint die 3. Translucent base material (1) Mesa structure c. Mesa structure" The table structure described in the item is the same, so the description here is omitted.

Since the light shielding portion described above is the same as the light shielding portion described in the item of “A. Nanoimprint Die 4. Others”, the description here is omitted.

b. First resin layer forming step

In the said 1st resin layer formation process, the said 1st resin layer is also formed on the said light-shielding part.

As the thickness of the first resin layer formed on the light-shielding portion as shown by H5 in FIG. 10(b), as long as the thickness of the first resin layer in the first etching step described below can be removed The said first resin layer on the said light-shielding part remains on the said translucent base material side, it does not specifically limit, It is set suitably according to etching conditions.

c. The first etching step

In the said 1st etching process, the said light-shielding part is made to remain|survive.

The first etching step is not particularly limited, but generally, as shown in FIGS. 10( c ) and 11 ( a ), in the first resin layer removal step, the first resin layer formed on the light shielding portion is The remaining part of the above-mentioned translucent base material side is removed, and the other part of the above-mentioned first resin layer is removed, and in the above-mentioned high-contrast film removal step, the above-mentioned remaining above-mentioned first resin layer is used as the above-mentioned masking. The said light-shielding part is left.

d. Tantalum oxide film formation step

In the step of forming the tantalum oxide film, the tantalum oxide film is formed on the main surface of the light shielding portion.

In the step of forming the tantalum oxide film, as shown in FIG. 11(b), preferably, the tantalum oxide film is continuously formed on the main surface and the side surface of the light shielding portion so as to cover the main surface and the side surface of the light shielding portion. . This is because it is possible to manufacture the above-mentioned die for nanoimprinting, which can effectively suppress the light-shielding portion from being affected by sulfuric acid cleaning, alkali cleaning, and plasma ashing from the side surface. The membrane decreases or disappears.

e. Second resin layer forming step

In the second resin layer forming step, the thick second resin layer is also formed on the tantalum oxide film formed on the main surface of the light shielding portion.

Here, the thickness of the above-mentioned thick film formed on the above-mentioned tantalum oxide film formed on the main surface of the above-mentioned light-shielding portion refers to the above-mentioned second resin in the above-mentioned light-shielding portion as shown by H6 in FIG. 11(c) The thickness of the thick film of the layer is, for example, in the same range as the thickness of the thick film of the second resin layer in the concave portion of the marking pattern shown by H3 in FIG. 8( c ).

f. 2nd etching step

In the said 2nd etching process, the said tantalum oxide film formed in the main surface of the said light-shielding part is left.

The second etching step is not particularly limited, but generally, as shown in FIGS. 12( a ) and 12 ( b ), in the second resin layer removal step, the tantalum oxide formed on the main surface of the light shielding portion is The second resin layer of the thick film formed on the film remains on the light-transmitting substrate side, and the other parts of the thick film of the second resin layer are removed. In the step of removing the tantalum oxide film, the remaining parts are The second resin layer of the thick film formed on the tantalum oxide film formed on the main surface of the light shielding portion is used for the etching of the mask, so that the tantalum oxide film formed on the main surface of the light shielding portion remains. .

C. Nanoimprint Die (Second Embodiment)

Furthermore, in the present invention, as a second aspect, there is provided a die for nanoimprinting, characterized by comprising a light-transmitting substrate having a base portion and a mesa structure provided on the main surface of the base portion, The main surface of the above-mentioned mesa structure is provided with a transfer pattern of the concave-convex structure and a marking pattern of the concave-convex structure, and a high-contrast film is provided on the bottom surface of the concave portion of the above-mentioned marking pattern, and the end of the high-contrast film is not exposed. In a method, a protective film comprising a material different from the high-contrast film is provided which continuously covers the surface of the high-contrast film, the side surface of the convex portion of the marking pattern, and the upper surface of the convex portion of the marking pattern, and the above-mentioned high-contrast film is provided. The protective film is provided so that the end portion is located on the upper surface of the convex portion of the pattern for marking.

The nanoimprint die of this aspect will be described with reference to the drawings. FIG. 13( a ) is a schematic cross-sectional view showing an example of a die for nanoimprinting of this aspect. Fig. 13(b) is an enlarged view inside the dotted frame shown in Fig. 13(a). FIG.13(c) is a figure explaining the formation area of a protective film.

As shown in FIGS. 13( a ) to 13 ( c ), the die 10 for nanoimprinting includes a translucent substrate 20 having a base portion 21 and a mesa structure 22 provided on the main surface 21 a of the base portion 21 . On the main surface 22a of the mesa structure 22, the transcription|transfer pattern 30 of the uneven|corrugated structure and the marking pattern 40 of the uneven|corrugated structure are provided. Moreover, the recessed part 25 containing the mesa structure 22 in plan view is provided in the surface on the opposite side to the main surface 21a of the base part 21. As shown in FIG. Furthermore, the high-contrast film 50 containing Cr is provided only on the bottom surface 42 a of the concave portion 42 of the marking pattern 40 . The high contrast film 50 constitutes an alignment mark. The protective film 600 including the material different from the high-contrast film is formed to continuously cover the surface of the high-contrast film 50 and the side surface 44b of the convex portion 44 of the marking pattern 40 in such a manner that the end of the high-contrast film 50 is not exposed. , and the upper surface 44a of the convex portion of the above-mentioned marking pattern. Furthermore, the protective film 600 is provided so that the edge part may be located in the upper surface 44a of the convex part 44 of the pattern for marking.

In this way, the protective film including the material different from the high-contrast film is formed so as to continuously cover the surface of the high-contrast film, the side surface of the convex portion of the pattern for marking, and the surface of the pattern for marking in such a manner that the end of the high-contrast film is not exposed. The upper surface of the convex portion is provided so that the end portion is located on the upper surface of the convex portion of the marking pattern, whereby the end portion of the high-contrast film is sealed by the above-mentioned protective film, so that the high-contrast film can be reliably suppressed. The penetration of the chemical liquid in contact with the film can suppress the film reduction of the high-contrast film. Moreover, even if the said high-contrast film protrudes to the side surface of the convex part of the said pattern for marking, the said high-contrast film can be covered without being exposed.

1. Protective film

The constituent material of the protective film is not particularly limited as long as it is a material different from that of the high-contrast film, and examples thereof include tantalum oxide, silicon (amorphous; a-Si), silicon oxide (SiO), and silicon nitride (SiN). ), silicon oxynitride (SiON), silicon carbide (SiC), molybdenum silicide (MoSi), tantalum silicide (TaSi), tungsten silicide (WSi), etc.

It is particularly preferable that the protective film is a tantalum oxide film containing tantalum oxide. The tantalum oxide film has sufficiently high resistance to sulfuric acid cleaning or alkali cleaning for removing foreign matter such as resists used in nanoimprint lithography, and it is also resistant to remaining foreign matter that cannot be removed by these cleanings. The resistance to removal by plasma ashing using oxygen-containing gas is also sufficiently high. Therefore, the tantalum oxide film is not likely to disappear during sulfuric acid cleaning, alkali cleaning, and cleaning of the die using plasma ashing.

Furthermore, since the tantalum oxide film is different from the etching gas for the high-contrast film, there is no fear of disappearing by dry etching when the high-contrast film is processed.

The protective film of the present invention is characterized in that it is formed to continuously cover the surface of the high-contrast film, the side surfaces of the convex portions of the marking pattern, and the upper surface of the convex portion of the marking pattern so that the ends of the high-contrast film are not exposed. As a method of forming the protective film in this way, for example, a vacuum evaporation method, a sputtering method, a PVD method (physical vapor deposition) such as an ion plating method, a plasma CVD method, a thermal CVD method, and an optical CVD method, etc. are mentioned. CVD (chemical vapor deposition) and the like.

In the present invention, it is particularly preferable to use the following method: in the sputtering method, the pattern surface for marking and the target which is the material of the protective film are formed in such a manner that the side surface of the convex part of the pattern for marking is also reliably formed. The position of the surface is not horizontal but has an angle of 1° to 30°, and a protective film can also be formed on the side surface of the convex portion, which can be uniformly formed by rotating the substrate.

Furthermore, as shown in FIG. 13( c ), the protective film 600 preferably includes a concave portion provided with a marking pattern of a high-contrast film, and an alignment mark region 40A in which a plurality of convex portions are continuously arranged in plan view. In this way, it is provided in an area larger than the alignment mark area 40A.

Moreover, in this case, it is generally preferable that the alignment mark region 40A has a rectangular shape, and the end portion of the protective film 600 is positioned at a distance of 50 nm or more from each side of the alignment mark region 40A. That is, as shown in FIG. 13( b ), only when the bottom surface 42 a of the concave portion 42 of the marking pattern 40 is provided with the high-contrast film 50 containing Cr, the protective film 600 is preferably the top surface of the convex portion. The width (w3 and w4 in FIG. 13( c )) is 50 nm or more.

Furthermore, as shown in FIG. 14( a ), the alignment mark region may be provided on the main surface of the mesa structure There are plural. In this case, for example, the concave-convex patterns in each alignment mark region may be in mutually orthogonal directions.

In the case where a plurality of alignment mark regions are arranged on the main surface of the mesa structure, preferably as shown in FIG. 14( b ), the protective film 600 is arranged on a more plurality of alignment mark regions in a manner of including a plurality of alignment mark regions. Align the area with the larger marked area.

Moreover, also in this case, it is preferable that the edge part of a protective film exists in the position spaced 50 nm or more from each side of 40 A of alignment mark regions.

The width (w3 and w4 in FIG. 13(c) ) of the upper surface of the convex portion of the protective film to the end of the protective film is preferably 50 nm or more as described above, particularly preferably 100 nm or more, especially It is preferable to set it as 500 nm or more. The reason for this is to make the sealing property with respect to the high-contrast film achieved by the protective film more reliable. In addition, the upper limit should just be a range which does not affect the pattern surface for marking normally.

In addition, the thickness of the protective film 600 is usually 1 nm to 20 nm, preferably 1 nm to 10 nm. This is because if the protective film formed on the upper surface of the convex portion is too thin, the reduction or disappearance of the high-contrast film cannot be sufficiently suppressed, and if the protective film is too thick, when the protective film is formed on the convex portion of the marking pattern. When it is the upper surface of the part, it becomes a hindrance when the said transfer pattern is transcribe|transferred to the to-be-transferred body.

Furthermore, as the thickness of the protective film in the side surface of a convex part, it is preferable to exist in the range of 0.5 nm - 10 nm, and it is especially preferable to exist in the range of 0.5 nm - 5 nm. The reason for this is that in the range thinner than the above In this case, it is difficult to sufficiently protect the high-contrast film, and it is difficult to form a film thicker than the above-mentioned range in terms of steps, and it takes time, which is disadvantageous in terms of cost. In addition, the thickness of the protective film on the side surface of the convex portion may not be uniform, and generally, the upper surface side of the convex portion is thicker, and the opposite side (the bottom surface side of the concave portion) is thin. Therefore, the value of the thickness of the above-mentioned film thickness represents an average value.

In addition, in the nanoimprint die in this aspect, the protective films provided on the bottom surfaces of the adjacent plural recesses in the marking pattern may be separated from each other.

2. High contrast film

The high-contrast film in this aspect is provided on the bottom surface of the concave portion of the marking pattern. Preferably, as shown in FIG. 13( b ), the high-contrast film is provided only on the bottom surface 42 a of the concave portion 42 of the above-mentioned marking pattern.

In addition, since the said high contrast film is the same as the high contrast film described in the item of the said "A. Nanoimprint die 2. High contrast film", description here is abbreviate|omitted.

3. Translucent substrate

The light-transmitting substrate in this aspect has a base and a mesa structure provided on the main surface of the base. Since the translucent base material is the same as the translucent base material described in the item of "A. Nanoimprint die 3. Translucent base material" above, the description here is omitted. Furthermore, in this aspect, as in the first embodiment, it is preferable to provide grooves along the protective film on the main surface of the mesa structure. Also, as in the first embodiment, as the table top structure, a single step structure may be used, and the transfer pattern and the marking pattern may be provided on the main surface of the single step structure, or may be Including the first step structure and the second step provided on the main surface of the first step structure A structure in which the above-mentioned transfer pattern and the above-mentioned pattern for marking are provided on the main surface of the above-mentioned second step structure.

D.2 segment table base

In the present invention, a 2-stage mesa substrate is provided, which is characterized in that it is used for manufacturing a die for nanoimprinting, and has a light-transmitting 2-stage mesa substrate forming member, and the light-transmitting 2-stage mesa is used for forming a substrate. The base forming member has a base portion and a mesa structure provided on the main surface of the base portion, and the mesa structure includes a first level structure provided on the main surface of the base portion and a second level structure provided on the principal surface of the first level structure. A stepped structure, wherein a light shielding portion is provided at least in a region surrounding the second stepped structure among the principal surfaces of the first stepped structure, and the principal surface of the light shielding portion is covered so as to cover the principal surface of the light shielding portion. A protective film is provided.

An example of the two-stage mesa base of the present invention will be described with reference to the drawings. FIG. 15 is a schematic cross-sectional view showing an example of a two-stage mesa base of the present invention. As shown in FIG. 15 , the 2-stage mesa base 200 of the present invention has a translucent 2-stage mesa base forming member 201, and the translucent 2-stage mesa base forming member 201 has a base portion 210 and a mesa provided on the main surface of the base portion Construct 220. The mesa structure 220 includes a first stepped structure 270 provided on the main surface of the base portion 210 and a second stepped structure 280 provided on the main surface of the first stepped structure. Moreover, the recessed part 250 containing the said 2nd step structure in plan view is provided in the surface on the opposite side to the main surface 210a of the base part 210. As shown in FIG. A light shielding portion 70 is provided on the main surface of the first level difference structure in a region surrounding the second level difference structure, and a protective film 600 is provided on the main surface of the light shielding portion so as to cover the principal surface of the light shielding portion 70 .

With such a two-stage mesa substrate, the following nanoimprint die can be produced by The said light-shielding part suppresses that the exposure light is irradiated to an unintended area at the time of photoimprinting, and the said protective layer can suppress the reduction or disappearance of the film of the said light-shielding part.

1. Translucent 2-stage table base forming member

The above-mentioned translucent two-stage mesa base forming member has a base portion and a mesa structure provided on the main surface of the base portion.

(1) Table structure

The member for translucent two-stage mesa base formation in the present invention is the same as the above-mentioned translucent base material except that the uneven structure is not formed on the main surface of the mesa structure. That is, the pattern for marking and the transfer pattern were not formed. The mesa structure includes a first level structure provided on the main surface of the base and a second level structure provided on the main surface of the first level structure. The shape of the first level structure and the second level structure in plan view or the height of the first level structure and the second level structure, and the vertical and lateral directions of the first level structure and the second level structure which are rectangular in plan view Since the length is the same as that described in the item of "A. Nanoimprint die 3. Translucent substrate (1) Mesa structure", the description here is omitted.

As a formation method of the said mesa structure, the said 1st level|step difference structure, and the said 2nd level|step difference structure, the wet etching etc. using an etching mask are mentioned, for example.

(2) Base

Since the above-mentioned base is the same as the content described in the item of "A. Nanoimprint die 3. Translucent base (2) base", the description here is omitted.

2. Shading part

The said light-shielding part is provided in the area|region surrounding the 2nd level|step difference structure in the main surface of the 1st level|step difference structure. The light-shielding portion is not particularly limited as long as it can prevent the exposure light from being irradiated to an unintended area during photoimprinting, and may have a single-layer structure including only the light-shielding film, or may have a light-shielding film and A multilayer structure in which high-contrast films are laminated in this order. The reason for this is that the light-shielding property of the multilayer structure is higher than that of the single-layer structure, so that it is possible to effectively suppress the unintended region from being irradiated with the exposure light at the time of photoimprinting.

The materials, light-shielding properties, thickness, transmittance, formation method, and high-contrast film of the light-shielding film are the same as those described in the above-mentioned item of "A. Nanoimprinting die 4. Others". The description here is omitted.

Further, the light shielding portion may be provided only in the area around the second level structure in the main surface of the first level structure as shown in FIG. 15 , or may be provided from the main surface of the first level structure 270 as shown in FIG. The surface is set to the main surface of the base 210 .

3. Protective film

The protective film in the two-stage mesa base of the present invention is provided on the main surface of the light-shielding portion so as to cover the main surface of the light-shielding portion without being exposed. By the said protective film, the reduction or disappearance of the film of a light-shielding part can be suppressed fully. As shown in FIG. 16 , when the light shielding portion 70 is provided from the main surface of the first stepped structure 270 to the main surface of the base portion 210 , the protective film 600 is provided at least from the main surface of the first stepped structure 270 to the main surface of the base portion 210 . noodle.

The material and film thickness of the protective film are the same as those described in the item of "C. Nanoimprint die (Second Embodiment) 1. Protective film", so the description here is omitted. .

E.2 Manufacturing Method of Mesa Base

In the present invention, there is provided a method for producing a 2-stage mesa base, characterized in that it is the above-mentioned method for producing a 2-stage mesa base, and a member for forming a translucent 2-stage mesa base is prepared, the translucent 2-stage mesa base is The forming member has a base portion and a mesa structure provided on the main surface of the base portion, and the mesa structure includes a first level structure provided on the main surface of the base portion and a second level provided on the principal surface of the first level structure. A difference structure in which a film for forming a light-shielding portion is formed on the principal surface of the side where the first step structure and the second step structure are arranged in the light-transmitting two-stage mesa base forming member, and the film for forming a light-shielding portion is formed on the main surface. A film for forming a protective film is formed thereon, a curable resin layer is formed on the main surface of the first step structure and the main surface of the second step structure, and the curable resin layer is formed on the first step The film thickness of the curable resin layer on the main surface of the structure is thicker than the film thickness of the curable resin layer formed on the main surface of the second step structure. The film is etched so that only the main surface of the first step structure remains, thereby producing the second step in the main surface of the first step structure of the light-transmitting two-stage mesa base forming member. The area around the differential structure is provided with a light-shielding portion and a two-stage mesa base of a protective film in sequence.

An example of the manufacturing method of the two-stage mesa substrate of the present invention will be described with reference to the drawings. FIGS. 17( a ) to 17 ( c ) are schematic cross-sectional views showing an example of a method for manufacturing a two-stage mesa substrate of the present invention.

First, as shown in FIG. 17( a ), a translucent two-stage mesa base forming member 201 is prepared. The light-transmitting two-stage mesa base forming member 201 has a base portion 210 and a mesa structure 220 provided on the main surface of the base portion. The mesa structure 220 has a first stepped structure 270 provided on the main surface 210a of the base portion 210 and a second stepped structure 280 provided on the main surface 270a of the first stepped structure 270 .

Next, as shown in FIG.17(b), the film 70 for light-shielding part formation is formed in the surface of the member 201 for two-stage mesa base formation. Next, as shown in FIG.17(c), the film 610 for protective film formation is formed on the film 70 for light shielding part formation.

Next, as shown in FIGS. 17(d) and (e), the curable resin layer 17 is formed into a thick film on the main surface of the first step structure and a thin film on the main surface of the second step structure Then, after hardening in a state pressed against the resin layer thickness specifying die 101, the resin layer thickness specifying die 101 is released from the mold, thereby performing imprint molding. The material of the curable resin layer is not particularly limited as long as it is a curable resin used for nanoimprint lithography, and examples thereof include thermosetting resins and photocurable resins. Especially preferable is a photocurable resin, and especially preferable is an ultraviolet curable resin.

Next, as shown in FIG.17(f), the main surface of the 1st step structure in which the curable resin layer was formed as a thick film is left, and the protective film and the film for light shielding part formation are removed by etching. In this way, a two-stage mesa base in which the light-shielding portion 70 is provided in the region around the second level structure in the main surface of the first level structure of the member for forming a light-transmitting two-stage mesa base can be produced. , and a protective film 600 is provided on the main surface of the light-shielding portion 70 so as to cover the main surface of the light-shielding portion 70 .

Further, in the present invention, there is provided a method for producing a two-stage mesa base, characterized in that it is the above-mentioned method for producing a two-stage mesa base, and a member for forming a light-transmitting two-stage mesa base is prepared. The mesa base forming member has a base portion and a mesa structure provided on the main surface of the base portion, and the mesa structure includes a first stepped structure provided on the main surface of the base portion and a first stepped structure provided on the main surface of the first stepped structure. 2-step structure, a film for forming a light-shielding portion is formed on the surface of the member for forming a light-transmitting two-stage mesa base, a film for forming a protective film is formed on the film for forming a light-shielding portion, and a film for forming a protective film is coated on the film for forming a protective film. The cloth resist composition forms a resist layer, and by exposing and developing the resist layer through a mask, the resist layer on the main surface of the second step structure is removed, and the exposed second step structure is removed. The film for forming a light-shielding portion and the film for forming a protective film formed on the main surface of the poor structure are removed by etching, thereby producing a laminate in which the light-shielding portion and the protective film are laminated in this order. The main surface of the said 1st level|step difference structure of the member for mesa base forming is provided to the two-stage mesa base of the main surface of the said base part.

Another example of the manufacturing method of the above-mentioned two-stage mesa substrate of the present invention will be described with reference to the drawings. FIGS. 18( a ) to 19 ( c ) are schematic cross-sectional views showing an example of a method for producing a two-stage mesa substrate of the present invention.

First, as shown in FIG. 18( a ), a translucent two-stage mesa base forming member 201 is prepared. The light-transmitting two-stage mesa base forming member 201 has a base portion 210 and a mesa structure 220 provided on the main surface of the base portion. The mesa structure 220 has a first stepped structure 270 provided on the main surface 210a of the base portion 210 and a second stepped structure 280 provided on the main surface 270a of the first stepped structure 270 .

Next, as shown in Fig. 18(b), the surface shape of the member for forming the translucent two-stage mesa base is formed. The light-shielding portion forming film 70 is formed. Next, as shown in FIG.18(c), the film 610 for protective film formation is formed on the film for light shielding part formation.

Next, as shown in FIG.18(d), the resist composition is apply|coated on the protective film, and the resist layer 18 is formed. Next, as shown in FIGS. 18(e) and 19(a), the resist on the main surface of the second step structure is removed by exposing and developing through a mask. Next, as shown in FIG.19(b), the film for light-shielding part formation and the protective film formed in the main surface of a 2nd step structure are removed by etching. Next, as shown in FIG. 19( c ), finally, by removing the resist, the light-shielding portion 70 and the protective film 600 are produced from the main surface of the first step structure of the light-transmitting two-stage mesa base to the base portion. 2-segment countertop base on the main side.

In the above-mentioned manufacturing method of the two-stage mesa substrate, by exposing and developing the main surface of the base 210 when exposing the resist layer 18 shown in FIG. The section of the table base is shown.

In addition, this invention is not limited to the said embodiment. The above-described embodiments are examples, and any one having substantially the same configuration as the technical idea of the claim of the present invention and exhibiting the same effect is included in the technical scope of the present invention.

[Example]

Hereinafter, the present invention will be described in more detail using examples.

[Example 1]

A nanoimprint die having the same configuration as the nanoimprint die 10 shown in FIG. 1 is manufactured by the manufacturing method shown in FIGS. 7( a ) to 9( c ). At this time, the material of the light-transmitting substrate is set to Quartz glass, the material of the high contrast film is set to Cr. In addition, the tantalum oxide film was formed by sputtering, and the thickness of the tantalum oxide film was 4 nm. Hereinafter, a film including the tantalum oxide film in Example 1 and provided so as to cover the high-contrast film without being exposed is referred to as a protective film.

[Example 2]

A die for nanoimprinting was produced in the same manner as in Example 1, except that a chromium oxynitride film having the same thickness as the tantalum oxide film of Example 1 and containing chromium oxynitride was formed as a protective film.

[Example 3]

A die for nanoimprinting was produced in the same manner as in Example 1, except that a silicon oxide film having the same thickness as that of the tantalum oxide film of Example 1 and containing SiO ₂ was formed as a protective film.

[Example 4]

A die for nanoimprinting was produced in the same manner as in Example 1, except that a tantalum nitride film having the same thickness as the tantalum oxide film of Example 1 and containing TaN was formed as a protective film.

[Comparative Example 1]

A mold for nanoimprinting was produced in the same manner as in Example 1, except that a protective film was not formed on the surface of the high-contrast film.

[Evaluation]

About Examples 1 to 4 and Comparative Example 1, the film-forming properties, workability, contrast, and acid resistance properties, alkali resistance, and oxygen ashing resistance were evaluated as follows.

1. Film formation

The easiness of film formation when various protective films are formed on the surface of the high-contrast film was evaluated. Evaluation conditions and evaluation criteria are as follows.

(evaluation conditions)

Various protective films are formed by sputtering.

(Evaluation Criteria)

○: Film formation is easy.

×: Film formation is difficult.

2. Processability

The easiness of processing the protective film at the time of manufacture of the die for nanoimprint was evaluated. Evaluation conditions and evaluation criteria are as follows.

(evaluation conditions)

Various protective films are processed by dry etching using an etching gas suitable for processing various protective films.

(Evaluation Criteria)

○: Processing is easy.

×: Processing is difficult.

3. Contrast

The contrast ratio (reflectivity) of the high-contrast film in the die for nanoimprint was evaluated. Evaluation Conditions and evaluation criteria are as follows.

(evaluation conditions)

In an imprint apparatus, alignment marks including a high-contrast film are used to perform the positional alignment of the die for nanoimprint and the object to be transferred.

(Evaluation Criteria)

○: A contrast sufficient for positional alignment was obtained.

×: Contrast sufficient for positional alignment could not be obtained.

4. Acid resistance

The resistance of the protective film (a high contrast film for Comparative Example 1) when the die for nanoimprinting was washed with SPM (a mixed solution of sulfuric acid and hydrogen peroxide water) was evaluated. Evaluation conditions and evaluation criteria are as follows.

(evaluation conditions)

The die for nanoimprint was immersed in SPM of H ₂ SO ₄ :H ₂ O ₂ =3:1, 100° C. for 40 minutes. Then, use AFM (Atomic Force Microscopy, atomic force microscope) to measure the height of the protective film before and after immersion (for Comparative Example 1, it is a high-contrast film), and obtain the height of the protective film after immersion relative to the height of the protective film before immersion. The reduced amount is used as the disappearance of the protective film.

(Evaluation Criteria)

○: The protective film (for Comparative Example 1, it is a high-contrast film) did not disappear at all.

Δ: The protective film (for Comparative Example 1 is a high-contrast film) disappeared, and the amount of disappearance was less than 30%.

×: The protective film (for Comparative Example 1 is a high-contrast film) disappeared, and the amount of disappearance was 30% or more.

5. Alkali resistance

The resistance of the protective film (a high contrast film for Comparative Example 1) when the die for nanoimprint was washed by SC1 (washing treatment using ammonia water and hydrogen peroxide) was evaluated. Evaluation conditions and evaluation criteria are as follows.

(evaluation conditions)

‧SC1

The die for nanoimprint was immersed in NH ₄ OH:H ₂ O ₂ :H ₂ O=1:1:5, 30° C. ammonia water and hydrogen peroxide water for 40 minutes. Then, the height of the protective film before and after immersion (for Comparative Example 1 is a high-contrast film) was measured by AFM, and the amount of decrease in the height of the protective film after immersion relative to the height of the protective film before immersion was obtained as the amount of disappearance of the protective film .

(Evaluation Criteria)

○: The protective film (for Comparative Example 1, it is a high-contrast film) did not disappear at all.

Δ: The protective film (for Comparative Example 1 is a high-contrast film) disappeared, and the amount of disappearance was 30% or less.

×: The protective film (for Comparative Example 1 is a high-contrast film) disappeared, and the amount of disappearance was 30% or more.

6. Oxygen ashing resistance

The resistance of the protective film at the time of cleaning by plasma ashing using an oxygen-containing gas (for Comparative Example 1, it is a high-contrast film) was evaluated. Evaluation conditions and evaluation criteria are as follows.

(evaluation conditions)

Using a parallel plate type plasma ashing device, the die for nanoimprinting was ashed in an oxygen atmosphere for 10 minutes. Then, the height of the protective film before and after ashing (for Comparative Example 1 is a high-contrast film) was measured by AFM, and the reduction in the height of the protective film after ashing relative to the height of the protective film before ashing was obtained as the protective film amount of disappearance.

(Evaluation Criteria)

○: The protective film (for Comparative Example 1, it is a high-contrast film) did not disappear at all.

Δ: The protective film (for Comparative Example 1 is a high-contrast film) disappeared, and the amount of disappearance was less than 30%.

×: The protective film (for Comparative Example 1 is a high-contrast film) disappeared, and the amount of disappearance was 30% or more.

The evaluation results are shown in Table 1 below.

As shown in Table 1 above, the tantalum oxide film of Example 1 was excellent in film formability, workability, contrast, acid resistance, alkali resistance, and oxygen ashing resistance. Therefore, the film reduction or disappearance of the high-contrast film can be sufficiently suppressed.

On the other hand, as shown in Table 1 above, the chromium oxynitride film of Example 2 has good acid resistance and alkali resistance, but is poor in oxygen ashing resistance. The silicon oxide film of Example 3 has good acid resistance and alkali resistance, but poor workability. Specifically, when processing by etching, the etching cannot be stopped at the boundary between the silicon oxide film and the light-transmitting substrate, and processing may become difficult. In addition, the silicon oxide film system of Example 3 has insufficient oxygen ashing resistance, but has good acid resistance, and the alkali resistance is also sufficient to suppress the reduction of the high-contrast film.

The tantalum nitride film of Example 4 has good acid resistance and alkali resistance, but is poor in film formation and workability. Specifically, since the tantalum nitride film is easily oxidized when exposed to oxygen during film formation, it may be difficult to form the film. In addition, when the tantalum nitride film is processed by dry etching, oxidation occurs and a tantalum oxide film may be generated. Since the etching gases for the tantalum nitride film and the tantalum oxide film are chlorine-based gas and fluorine-based gas, respectively, it may be difficult to process the film when the tantalum nitride film is processed by dry etching.

Furthermore, according to the result of the comparative example 1 which does not provide a protective film shown in the said Table 1, it turns out that the acid resistance and oxygen ashing resistance of a high contrast film are inferior.

10‧‧‧Die for Nanoimprinting

20‧‧‧Transparent substrate

21‧‧‧Base

21a‧‧‧Main surface of base 21

22‧‧‧Mesa structure

22a‧‧‧Main surface of table top structure 22

25‧‧‧Depressed part

26‧‧‧Slot

30‧‧‧Transfer pattern

40‧‧‧Pattern for marking

42‧‧‧Recess

42a‧‧‧Bottom

44‧‧‧Protrusion

44a‧‧‧Top surface

44b‧‧‧Side

50‧‧‧High Contrast Film

60‧‧‧Tantalum oxide film

D‧‧‧Depth of the concave part of the concave-convex structure

M‧‧‧The height of the table structure

Claims (13)

A die for nanoimprinting, characterized by comprising a translucent substrate having a base portion and a mesa structure disposed on the main surface of the base portion, and the main surface of the mesa structure is provided with transfer printing with a concave-convex structure The pattern and the marking pattern of the concave-convex structure are provided with a high-contrast film on the bottom surface of the concave portion of the marking pattern, and a tantalum oxide film is provided on the surface of the high-contrast film so as to cover the high-contrast film, and the tantalum oxide film is provided Grooves are provided on the surface of the high-contrast film and the upper surface of the convex portion of the marking pattern and the main surface of the mesa structure along the tantalum oxide film. The die for nanoimprinting according to claim 1, wherein the mesa structure comprises a first level structure provided on the main surface of the base portion and a second level structure provided on the main surface of the first level structure, The transfer pattern and the marking pattern are provided on the main surface of the second level structure, a light shielding portion is provided in a region surrounding the second level structure in the principal surface of the first level structure, and the above The tantalum oxide film is provided on the main surface of the light-shielding portion so as to cover the main surface of the light-shielding portion. The die for nanoimprinting according to claim 2, wherein the light-shielding portion has a light-shielding film and an upper The high-contrast film has a multilayer structure in which the high-contrast films are laminated in this order. The die for nanoimprinting according to claim 3, wherein a recessed portion including the second step structure in plan view is provided on the surface of the base portion on the opposite side to the main surface. A method of manufacturing a die for nanoimprinting, characterized by comprising: a preparation step of preparing a die-forming member, the die-forming member having a light-transmitting substrate and a high-contrast film, the translucent The base material has a base portion and a mesa structure provided on the main surface of the base portion, and a transfer pattern of a concave-convex structure and a marking pattern of the concave-convex structure are provided on the main surface of the mesa structure, and the high-contrast film is provided on the light-transmitting property. The entire main surface side of the base material; the first resin layer forming step, in which the marking pattern area provided with the above-mentioned marking pattern becomes a thin film, and the transfer pattern area provided with the above-mentioned transfer pattern is formed into a thick film. forming a first resin layer on the marking pattern and the transfer pattern; and a first etching step in which at least the marking is formed by etching the die-forming member on which the first resin layer is formed. The high-contrast film is left on the bottom surface of the concave portion of the pattern and the transfer pattern area, and the other parts of the high-contrast film are removed; the tantalum oxide film formation step is performed on the die in which the first etching step was performed. A tantalum oxide film is formed on the entire main surface side of the member; a second resin layer forming step is formed on the marking pattern in such a way that the marking pattern region becomes a thick film and the transfer pattern region becomes a thin film A second resin layer is formed on the tantalum oxide film in the area and the transfer pattern area; the second etching step is performed by forming the die on which the second resin layer is formed. The member is etched so that the tantalum oxide film formed on at least the surface of the high contrast film remains, and other parts of the tantalum oxide film are removed; and a third etching step is performed by performing the remaining tantalum oxide film. It is used for mask etching to remove the high-contrast film provided in the above-mentioned transfer pattern area. The method for producing a die for nanoimprinting according to claim 5, wherein in the first etching step, in the marking pattern, the high-contrast film is left only on the bottom surface of the concave portion, and the high-contrast film is The other part is removed, and in the said 2nd etching process, the said tantalum oxide film formed on the surface of the said high contrast film and the upper surface of the convex part of the said pattern for marking is left. The method for producing a die for nanoimprinting according to claim 6, wherein in the second resin layer forming step, the region that becomes the thick film of the second resin layer is set as the first resin layer in plan view The region of the thin film is on the inner side, and in the second etching step, the etching is performed to form a groove on the main surface of the mesa structure along the region that becomes the thick film of the second resin layer. The method for producing a die for nanoimprinting according to any one of claims 5 to 7, wherein in the preparation step, the die-forming member is prepared, and in the die-forming member, the mesa structure has a The first step structure on the main surface of the base portion and the second step structure provided on the main surface of the first step structure, the transfer pattern and the mark are provided on the main surface of the second step structure using a pattern, and further having a light-shielding portion provided in a region surrounding the second step structure in the main surface of the first step structure, In the first resin layer forming step, the first resin layer is also formed on the light shielding portion, in the first etching step, the light shielding portion is left, and in the tantalum oxide film forming step, the light shielding portion is formed The tantalum oxide film is formed on the main surface, and in the second resin layer forming step, the thick second resin layer is also formed on the tantalum oxide film formed on the main surface of the light shielding portion, and the second resin layer is formed on the second resin layer. In the etching step, the tantalum oxide film formed on the main surface of the light shielding portion is left. A die for nanoimprinting, characterized by comprising a translucent substrate having a base portion and a mesa structure disposed on the main surface of the base portion, and the main surface of the mesa structure is provided with transfer printing with a concave-convex structure The pattern and the marking pattern of the concave-convex structure are provided with a high-contrast film on the bottom surface of the concave portion of the marking pattern, and the surface of the high-contrast film and the above-mentioned high-contrast film are continuously covered so that the end of the high-contrast film is not exposed. The side surface of the convex part of the pattern for marking, and the upper surface of the convex part of the pattern for marking and a protective film comprising a material different from the above-mentioned high-contrast film, and the end of the protective film is on the convex part of the pattern for marking. The main surface of the above-mentioned mesa structure is provided with grooves along the above-mentioned protective film. The die for nano-imprinting according to claim 9, wherein the protective film is arranged in a plan view The alignment mark area in which a plurality of concave parts and convex parts of the above-mentioned marking pattern of the above-mentioned high-contrast film are arranged continuously is included in the inner side, and is provided in a larger area than the above-mentioned alignment mark area. The die for nanoimprinting according to claim 10, wherein the protective film is disposed in an area larger than the plurality of the above-mentioned alignment mark areas in a manner of including a plurality of the above-mentioned alignment mark areas in plan view. The die for nanoimprinting according to claim 9, wherein the protective film is arranged in a rectangular shape when viewed from above. The die for nanoimprinting according to any one of claims 9 to 12, wherein the protective film is a tantalum oxide film.

Images