TWI766059B - 具有經塗佈的發射線圈之塗佈裝置 - Google Patents

具有經塗佈的發射線圈之塗佈裝置 Download PDF

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TWI766059B
TWI766059B TW107122822A TW107122822A TWI766059B TW I766059 B TWI766059 B TW I766059B TW 107122822 A TW107122822 A TW 107122822A TW 107122822 A TW107122822 A TW 107122822A TW I766059 B TWI766059 B TW I766059B
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nickel
tin
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漢斯 格爾德 福斯
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德商愛思強歐洲公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/1633—Process of electroless plating
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/001—Magnets
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/06—Wires; Strips; Foils
    • C25D7/0607—Wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

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Abstract

本發明係有關於一種用於透過將一或數個製程氣體饋送入製程室(1)來將層沉積在基板(4)上之裝置，在該製程室中，承載基板(4)之基板座(3)可藉由一或數個發射線圈(5)所產生之交變電磁場被加熱至製程溫度，其中，該一或數個發射線圈具有塗層(9)。為此種裝置提供一種耐腐蝕的、同時具有較小的發射率從而在存在氯化合物及濕氣的情況下較為有效的發射線圈塗層，本發明提出：塗層(9)由錫及鎳構成。

Description

具有經塗佈的發射線圈之塗佈裝置
本發明係有關於一種用於透過將一或數個製程氣體饋送入製程室來將層沉積在基板上之裝置，在該製程室中，承載該基板之基板座可藉由一或數個發射線圈所產生之交變電磁場被加熱至製程溫度，其中，該一或數個發射線圈具有塗層。
DE 10 2010 016 471 Al描述過此種裝置。在朝外氣密封閉的殼體中設有製程室，在此製程室中設有由導電材料構成之基板座，基板平放在此基板座上。藉由氣體入口構件將反應製程氣體饋送入此製程室。藉由加熱裝置將此基板座加熱至製程溫度，製程氣體在此製程溫度中發生熱解，以便將層沉積在此基板上。藉由具有射頻之交變電磁場來加熱基板座。基板座中的感應渦流產生將基板加熱之熱。
用來產生交變電磁場之發射線圈配設有金層。正如其他貴金屬那般，金具有不會隨時間改變的較小的光學發射率之特性。
較小的光學發射率之優點在於，透過發射線圈之熱損失可最小化。例如因氧化層或反應層產生的變化的發射率會對反應器之熱平衡產生不利影響。金之物理及化學特性足以用於上述應用實例，但仍期望在濕氣及Cl2(或HCl)下使用耐腐蝕塗層，此等塗層 還/同時具有暫時恆定的較小發射率。先前技術亦包括DE 10 2009 025 971、US 7,897,205、US 4,699,675、US 2012/052216、US 7,241,506及US 2011/259879。
本發明之目的在於，針對同類型的裝置提供一種耐腐蝕的、同時具有較小的發射率從而在存在氯化合物及濕氣的情況下較為有效的發射線圈塗層。
本發明用以達成上述目的之解決方案為在申請專利範圍中提供之發明，其中，附屬項不僅為獨立項之有利改良方案，亦為用以達成上述目的的獨立解決方案。可將該請求項之各特徵與其他請求項之各特徵結合在一起。
根據本發明，提供一種改進的裝置及一種改進的發射線圈。
本發明首先且實質上提出：應用由錫及鎳構成之塗層作為由貴金屬構成之塗層的替代。塗層之最外層較佳僅具元素錫及鎳。特別是由非鐵金屬構成且建構為螺旋形空心體之發射線圈具有外表面，在進行塗佈前以適宜方式對該外表面進行機械清潔，例如進行噴玻璃丸處理。將本發明之塗層塗覆在(1-50μm之化學NiP(高磷(10-14wt%))底層上。該塗層係指兩個鎳/錫化合物之混合物，即Ni3Sn2與Ni3Sn4之混合物。該混合物可具有非化學計量組成。該塗層特別是具有60/40wt%至70/30wt%之錫/鎳比。該Sn/Ni比特別是為65/35wt%。該層厚可處於1μm與50μm之間或1μm與30μm之間的範圍內。該層厚較佳為20μm。以電鍍方式將層沉積在發射天線之視情況經預處理的本體上。但亦可採用其他塗佈方案，例如濺 鍍或浸塗。含有鎳之底層構成擴散障壁，該底層較佳具有至少30μm之層厚。
本發明之塗層一方面可抵禦氯或含氯化合物，另一方面具有較小的光學發射率，即具有較高的光學反射率。此外，該發射率/反射率亦為隨時間而穩定的。其本身在較高溫度下長時間地用氯或含氯化合物塗覆該塗層後亦不會發生改變。該層具有較強的耐氯離子腐蝕性並且構成針對氯離子之有效擴散障壁。該層防止氯離子穿過塗層朝金屬發射線圈之基底材料擴散。與例如鎳或鉻不同，本發明之混合物/合金具有大體保持不變的發射率。該表面之光學特性在長時間地用氯或含氯化合物塗覆該表面的情況下亦不會發生改變。特別是在富氯且濕潤的環境中確保該耐化學腐蝕性。
1‧‧‧製程室
2‧‧‧氣體入口構件
3‧‧‧基板座
4‧‧‧基板
5‧‧‧發射線圈
6‧‧‧末端
7‧‧‧末端
8‧‧‧空腔
9‧‧‧塗層
下面結合所附圖式對本發明進行詳細說明。其中：圖1為塗佈裝置之橫截面的示意圖，圖2為發射線圈5之俯視圖，以及圖3為發射線圈5之橫截面。
氣密的殼體包圍製程室1，氣體入口構件2與該製程室連通，該氣體入口構件亦用來饋送(除其他前驅物外之)含氯氣體，例如III主族元素之含氯化合物。但亦可透過氣體入口構件2饋送其他含氯化合物，以便例如在塗佈製程後透過蝕刻步驟清潔製程室1。在此特別是可採用Cl2或HCl。
在製程室1中設有基板座3，該基板座由石墨或另一導電材料構成並且承載一或數個需要塗佈之基板4。特別是可用半導 體層、特別是III-V族半導體層來塗佈該等基板。
在同一製程室1中且在其下方設有發射線圈5，該發射線圈由金屬構成且具有螺旋形的形狀。發射線圈5具有兩個末端6、7，該等末端藉由套管以導電之方式與佈置在製程室1外之輸送管連接(參閱WO 01/78105)。亦可透過該等輸送管饋送冷卻液，該冷卻液流過具有矩形或圓形橫截面之發射線圈5的空腔8。
由金屬、特別是銅合金製成之發射線圈5具有朝外的表面，該表面可與被饋送入製程室1之製程氣體、特別是含氯氣體接觸。為防止氯離子腐蝕發射線圈體之金屬，發射線圈5具有外側塗層。在先前技術中由貴金屬且特別是由金構成之塗層9在本發明中由錫鎳合金構成，其中，錫/鎳比為65/35wt%且層厚為20μm。以電鍍方式塗覆該塗層。
在發射線圈5進行塗佈前，可以適宜方式對該發射線圈進行預處理，例如透過噴玻璃丸處理進行機械清潔。例如可透過沉積底層(NiP、NiCo、青銅(Bronze))來進行化學預處理。該底層之厚度可為50μm。錫鎳塗層可由該二相Ni3Sn2及Ni3Sn4構成。因此，其可指兩個相之亞穩態的相混合物。
發射線圈5之塗層較佳為多分層之層。發射線圈5較佳由銅或大體由銅構成。首先將大體含有鎳之層沉積在銅基體之表面上。該底層較佳為化學鍍鎳層。該底層用作附加的擴散障壁，且其層厚較佳為至少30μm。該層厚可處於30μm與50μm之間的範圍內。在該底層上沉積有由錫及鎳構成之層，其層厚可介於1μm與50μm之間。該層厚較佳介於10μm與20μm之間。錫/鎳比處於前文所給出之範圍內。
前述實施方式係用於說明本申請整體所包含之發明，該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案，其中亦可將此等特徵組合中的兩個、數個或所有相互組合，亦即：一種裝置，其特徵在於：該塗層9由錫及鎳構成。
一種裝置，其特徵在於：該塗層9為Ni3Sn2與Ni3Sn4之混合物。
一種裝置，其特徵在於：該塗層9具有介於40wt%與30wt%之間的鎳含量且具有介於60wt%與70wt%之間的錫含量。
一種裝置，其特徵在於：該塗層9之最外層僅由元素鎳及錫構成。
一種裝置，其特徵在於：該塗層9之錫/鎳比為65/35wt%。
一種裝置，其特徵在於：該塗層9之層厚介於1μm與50μm之間或介於1μm與30μm之間，較佳為20μm。
一種裝置，其特徵在於：該塗層9以電鍍方式沉積在該發射線圈5上。
一種裝置，其特徵在於：在該大體含有銅之發射線圈上塗覆有大體含有鎳之底層，該底層承載該塗層9。
一種裝置，其特徵在於：該底層具有1μm至50μm之層厚，且特別是具有至少30μm之層厚。
一種發射線圈，其特徵在於：該塗層由錫及鎳構成。
一種發射線圈，其特徵在於：該塗層9為Ni3Sn2與Ni3Sn4之混合物。
一種發射線圈，其特徵在於：該錫/鎳比處於60/40wt%與70/30wt%之間的範圍內且特別是為35/35wt%，以及/或者該層厚處於1μm與50μm之間的範圍內，特別是為20μm。
所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容，該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明，其目的主要在於在該等請求項基礎上進行分案申請。此外，在每個請求項中給出之發明可具有在前文描述中揭示的、特別是用元件符號表示及/或在元件符號列表中給出的特徵中的一或多個。本發明亦涵蓋未實現前述特徵中之個別特徵的實施方案，特別是在此等特徵對於具體用途而言並非不可或缺或可被其他等效手段替代的情況下。
5‧‧‧發射線圈
6‧‧‧末端
7‧‧‧末端

Claims (12)

  1. 一種用於透過將一或數個製程氣體饋送入製程室(1)來將層沉積在基板(4)上之裝置，在該製程室中，承載該基板(4)之基板座(3)可藉由一或數個發射線圈(5)所產生之交變電磁場被加熱至製程溫度，其中，該一或數個發射線圈具有塗層(9)，其特徵在於：該塗層(9)由錫及鎳構成。
  2. 如請求項1之裝置，其中，該塗層(9)為Ni3 Sn2與Ni3 Sn4之混合物。
  3. 如請求項2之裝置，其中，該塗層(9)具有介於40wt%與30wt%之間的鎳含量且具有介於60wt%與70wt%之間的錫含量。
  4. 如請求項3之裝置，其中，該塗層(9)之最外層僅由元素鎳及錫構成。
  5. 如請求項4之裝置，其中，該塗層(9)之錫/鎳比為65/35wt%。
  6. 如請求項5之裝置，其中，該塗層(9)之層厚介於1μm與50μm之間。
  7. 如請求項1之裝置，其中，該塗層(9)以電鍍方式沉積在該發射線圈(5)上。
  8. 如請求項1之裝置，其中，在該大體含有銅之發射線圈上塗覆有大體含有鎳之底層，該底層承載該塗層(9)。
  9. 如請求項8之裝置，其中，該底層具有1μm至50μm之層厚。
  10. 一種用於請求項1至9中任一項之裝置的發射線圈，其特徵在於：該發射線圈(5)具有螺旋形的形狀，該發射線圈具有兩個用於饋送RF交變場之末端(6、7)，其中，該發射線圈(5)具有在該等末端(6、7)之間延伸之空腔(8)及外壁，該外壁塗佈有塗層(9)，其中，該塗層 (9)由錫及鎳構成。
  11. 如請求項10之發射線圈，其中，該塗層(9)為Ni3 Sn2與Ni3 Sn4之混合物。
  12. 如請求項11之發射線圈，其中，該錫/鎳比處於60/40wt%與70/30wt%之間的範圍內，以及/或者該層厚處於1μm與50μm之間的範圍內。
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