TWI764988B - 利用變頻產生器的智慧rf脈衝調整 - Google Patents

利用變頻產生器的智慧rf脈衝調整 Download PDF

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Publication number
TWI764988B
TWI764988B TW107105704A TW107105704A TWI764988B TW I764988 B TWI764988 B TW I764988B TW 107105704 A TW107105704 A TW 107105704A TW 107105704 A TW107105704 A TW 107105704A TW I764988 B TWI764988 B TW I764988B
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Taiwan
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power
frequency
generator
generators
duty cycle
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TW107105704A
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English (en)
Chinese (zh)
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TW201843694A (zh
Inventor
川崎勝正
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW107105704A 2017-03-13 2018-02-21 利用變頻產生器的智慧rf脈衝調整 TWI764988B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/457,798 2017-03-13
US15/457,798 US10424467B2 (en) 2017-03-13 2017-03-13 Smart RF pulsing tuning using variable frequency generators

Publications (2)

Publication Number Publication Date
TW201843694A TW201843694A (zh) 2018-12-16
TWI764988B true TWI764988B (zh) 2022-05-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW107105704A TWI764988B (zh) 2017-03-13 2018-02-21 利用變頻產生器的智慧rf脈衝調整

Country Status (6)

Country Link
US (2) US10424467B2 (enExample)
JP (1) JP7025440B2 (enExample)
KR (1) KR102467354B1 (enExample)
CN (1) CN110313049B (enExample)
TW (1) TWI764988B (enExample)
WO (1) WO2018169631A1 (enExample)

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KR102438864B1 (ko) * 2018-09-28 2022-08-31 램 리써치 코포레이션 플라즈마 챔버의 전극으로 전력 전달 최적화를 위한 방법들 및 시스템들
US12283463B2 (en) * 2019-04-29 2025-04-22 Lam Research Corporation Systems and methods for multi-level pulsing in RF plasma tools
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CN114121589A (zh) * 2020-08-31 2022-03-01 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
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JP7479256B2 (ja) * 2020-09-15 2024-05-08 東京エレクトロン株式会社 プラズマ処理装置
KR20220118024A (ko) 2021-02-18 2022-08-25 삼성전자주식회사 양면 냉각 방식을 활용한 가변 주파수 비정현파 전원 장치 및 이를 포함하는 플라즈마 처리 장치
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Also Published As

Publication number Publication date
JP2020515001A (ja) 2020-05-21
WO2018169631A1 (en) 2018-09-20
KR102467354B1 (ko) 2022-11-14
CN110313049B (zh) 2022-02-01
US20190362941A1 (en) 2019-11-28
US10790126B2 (en) 2020-09-29
US20180261430A1 (en) 2018-09-13
KR20190120343A (ko) 2019-10-23
US10424467B2 (en) 2019-09-24
JP7025440B2 (ja) 2022-02-24
CN110313049A (zh) 2019-10-08
TW201843694A (zh) 2018-12-16

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