TWI762894B - Circuit device - Google Patents
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- TWI762894B TWI762894B TW109110783A TW109110783A TWI762894B TW I762894 B TWI762894 B TW I762894B TW 109110783 A TW109110783 A TW 109110783A TW 109110783 A TW109110783 A TW 109110783A TW I762894 B TWI762894 B TW I762894B
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Abstract
Description
本發明是有關於一種電路裝置,且特別是有關於一種包括接合區的電路裝置。The present invention relates to a circuit arrangement, and in particular to a circuit arrangement including a land.
隨著時代的進展,為了使產品便於攜帶,輕、薄、短、小等特點逐漸變成消費者選擇產品的首要條件。除了縮小電子產品的尺寸外,許多廠商還致力於提升電子產品的可撓性,使產品更具競爭力。舉例來說,可撓式的天線可以設置於服裝、錶帶或摺疊式手機中。換句話說,相較於傳統不易彎折的天線,可撓式天線的可以應用的領域更加廣泛。With the development of the times, in order to make the product easy to carry, the characteristics of lightness, thinness, shortness and smallness have gradually become the primary conditions for consumers to choose products. In addition to reducing the size of electronic products, many manufacturers are also committed to improving the flexibility of electronic products to make products more competitive. For example, the flexible antenna can be installed in clothing, watch straps or foldable mobile phones. In other words, compared with the traditional antenna that is not easy to bend, the flexible antenna can be applied in a wider range.
然而,在一些可撓式電子裝置中,由於不同構件容易在接合過程中彎曲,可撓式電子裝置的製造難度較高。舉例來說,在將驅動晶片接合於可撓式基板的接合製程中,驅動晶片的接合墊容易因為彎曲而損壞,使驅動晶片不能正確的接合於可撓式基板。However, in some flexible electronic devices, the manufacturing of the flexible electronic devices is difficult because different components are easily bent during the bonding process. For example, in the bonding process of bonding the driving chip to the flexible substrate, the bonding pads of the driving chip are easily damaged due to bending, so that the driving chip cannot be properly bonded to the flexible substrate.
本發明提供一種電路裝置,可以提升接合製程的良率。The present invention provides a circuit device, which can improve the yield of the bonding process.
本發明的至少一實施例提供一種電路裝置,包括基板、驅動電路、第一金屬層、第一絕緣層、第二絕緣層、多個第二金屬接墊以及透明導電層。基板具有電路區以及第一接合區。驅動電路位於電路區上。第一金屬層位於第一接合區上,且電性連接至驅動電路。第一絕緣層位於第一金屬層上,且具有重疊於第一金屬層的多個第一通孔。第二金屬接墊位於第一通孔中,且第二金屬接墊凸出第一絕緣層的上表面。第二絕緣層位於第二金屬接墊上,且具有重疊於第二金屬接墊的多個第二通孔。透明導電層位於第二通孔中,且透明導電層凸出第二絕緣層的上表面。第一金屬層包括直接連接第二金屬接墊的第一金屬接墊,且第一金屬接墊透過第二金屬接墊而電性連接至透明導電層中的多個透明導電接墊;或透明導電層包括直接連接多個第二金屬接墊的一透明導電接墊,且透明導電接墊透過多個第二金屬接墊而電性連接至第一金屬層中的多個第一金屬接墊。At least one embodiment of the present invention provides a circuit device including a substrate, a driving circuit, a first metal layer, a first insulating layer, a second insulating layer, a plurality of second metal pads, and a transparent conductive layer. The substrate has a circuit area and a first bonding area. The driving circuit is located on the circuit area. The first metal layer is located on the first bonding area and is electrically connected to the driving circuit. The first insulating layer is located on the first metal layer and has a plurality of first through holes overlapping the first metal layer. The second metal pad is located in the first through hole, and the second metal pad protrudes from the upper surface of the first insulating layer. The second insulating layer is located on the second metal pad and has a plurality of second through holes overlapping the second metal pad. The transparent conductive layer is located in the second through hole, and the transparent conductive layer protrudes from the upper surface of the second insulating layer. The first metal layer includes a first metal pad directly connected to the second metal pad, and the first metal pad is electrically connected to a plurality of transparent conductive pads in the transparent conductive layer through the second metal pad; or transparent The conductive layer includes a transparent conductive pad directly connected to the plurality of second metal pads, and the transparent conductive pad is electrically connected to the plurality of first metal pads in the first metal layer through the plurality of second metal pads .
在整個說明書中,相同的附圖標記表示相同或類似的元件。在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。應當理解,當諸如層、膜、區域或基板的元件被稱為「在另一元件上」或「連接另一元件」時,其可以直接在另一元件上或與另一元件連接。二元件互相「電性連接」或「耦合」可為二元件間存在其它元件。Throughout the specification, the same reference numbers refer to the same or similar elements. In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element. Two elements are "electrically connected" or "coupled" to each other by the existence of other elements between the two elements.
應當理解,儘管術語「第一」與「第二」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。It will be understood that, although the terms "first" and "second" and the like may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections should not be limited by limitations of these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section.
圖1是依照本發明的一實施例的一種天線裝置的俯視示意圖。圖2是依照本發明的一實施例的一種電路裝置的仰視示意圖。圖2例如是圖1中之電路裝置20的放大示意圖。為了方便說明,圖1與圖2中之電路裝置20省略了部分構件。FIG. 1 is a schematic top view of an antenna device according to an embodiment of the present invention. FIG. 2 is a schematic bottom view of a circuit device according to an embodiment of the present invention. FIG. 2 is, for example, an enlarged schematic view of the
請參考圖1,天線裝置1包括天線基板10以及電路裝置20,其中電路裝置20接合至天線基板10。Please refer to FIG. 1 , the antenna device 1 includes an
天線基板10包括基板100、天線110、第一天線接墊120A以及第二天線接墊120B。基板100的材料可為玻璃、石英、有機聚合物或是金屬等等。在本實施例中,基板100為可撓式基板,且基板100包括透明、半透明或不透明的材料,但本發明不以此為限。天線110例如為螺旋狀或其他形狀,且天線110的兩端分別電性連接至第一天線接墊120A以及第二天線接墊120B。天線110、第一天線接墊120A以及第二天線接墊120B的材料包括導電材料,例如金、銀、銅、鋁、鉬、鈦或其他導電材料。The
請參考圖1與圖2,電路裝置20的基板200具有電路區202、第一接合區204A與第二接合區204B。第一接合區204A與第二接合區204B分別位於電路區202的相對兩側,其中第一接合區204A上的接墊(圖1與圖2省略繪出)與第二接合區204B上的接墊(圖1與圖2省略繪出)電性連接至電路區202上的元件,且第一接合區204A上的接墊與第二接合區204B上的接墊分別電性連接至第一天線接墊120A以及第二天線接墊120B。基板200的材料可為玻璃、石英、有機聚合物或是金屬等等。在本實施例中,基板200為可撓式基板,且基板200包括透明、半透明或不透明的材料。Referring to FIGS. 1 and 2 , the
在本實施例中,驅動電路210設置於電路區202上。電路區202部分重疊於天線110。在本實例中,驅動電路210部分重疊於天線110。在本實施例中,驅動電路210包括數位電路(Digital circuit)212、整流器(Rectifier)214以及分頻器(Divider)216,但本發明不以此為限。In this embodiment, the
圖3A是依照本發明的一實施例的一種天線裝置的剖面示意圖。為了方便說明,圖3A省略繪示了電路區上的部份元件。圖3B是圖3A的電路裝置的第一接合區的仰視示意圖。在此必須說明的是,圖3A和圖3B的實施例沿用圖1和圖2的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。3A is a schematic cross-sectional view of an antenna device according to an embodiment of the present invention. For convenience of description, FIG. 3A omits and illustrates some components on the circuit area. 3B is a schematic bottom view of the first bonding area of the circuit arrangement of FIG. 3A. It must be noted here that the embodiments of FIGS. 3A and 3B use the element numbers and part of the content of the embodiments of FIGS. 1 and 2 , wherein the same or similar reference numbers are used to represent the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.
請參考圖3A與圖3B,天線裝置2包括天線基板10以及電路裝置20。為了使方便說明,圖3A繪示的是天線基板10以及電路裝置20還未互相接合的狀態,在天線裝置2中,天線基板10以及電路裝置20實際上互相接合。Referring to FIGS. 3A and 3B , the
天線基板10包括基板100、天線110、第一天線接墊120A以及第二天線接墊120B。在本實施例中,導電黏著層300A、300B分別形成於第一天線接墊120A以及第二天線接墊120B上。導電黏著層300A、300B例如為異方性導電膠(Anisotropic Conductive Paste,ACP)、異方性導電膜(Anisotropic Conductive Film,ACF)或其他導電黏著層。The
電路裝置20包括基板200、驅動電路、第一金屬層220、第一絕緣層I1、第二絕緣層I2、多個第二金屬層230以及透明導電層240。The
基板200具有電路區202、第一接合區204A與第二接合區204B,其中第一接合區204A與第二接合區204B分別位於電路區202的相對兩側。The
驅動電路位於電路區220上。在本實施例中,驅動電路210包括多個主動元件T。舉例來說,驅動電路210中的整流器包括主動元件T。The driving circuit is located on the
主動元件T位於基板200上,且包括閘極G、多晶矽層CH、源極S以及汲極D。多晶矽層CH位於基板200上,且包括源極區CH1、通道區CH2以及汲極區CH3,其中通道區CH2位於源極區CH1以及汲極區CH3之間。源極區CH1以及汲極區CH3例如為N型摻雜的多晶矽或P型摻雜的多晶矽。閘極絕緣層GI位於多晶矽層CH以及基板200上。閘極G位於閘極絕緣層GI上,且重疊於多晶矽層CH。第一絕緣層I1位於閘極G以及閘極絕緣層GI上。源極S以及汲極D位於第一絕緣層I1上,且分別透過開口O1、O2而電性連接至源極區CH1以及汲極區CH3,其中開口O1、O2貫穿第一絕緣層I1以及閘極絕緣層GI。The active element T is located on the
在本實施例中,主動元件T為頂部閘極型的薄膜電晶體,但本發明不以此為限。在其他實施例中,主動元件T為底部閘極型的薄膜電晶體、雙閘極型的薄膜電晶體或其他形式的薄膜電晶體。在本實施例中,主動元件T為多晶矽薄膜電晶體,但本發明不以此為限。在其他實施例中,主動元件T為金屬氧化物薄膜電晶體、有機薄膜電晶體或其他形式的薄膜電晶體。In this embodiment, the active element T is a top gate type thin film transistor, but the invention is not limited to this. In other embodiments, the active element T is a bottom gate type thin film transistor, a double gate type thin film transistor or other forms of thin film transistor. In this embodiment, the active element T is a polysilicon thin film transistor, but the present invention is not limited to this. In other embodiments, the active element T is a metal oxide thin film transistor, an organic thin film transistor or other forms of thin film transistor.
第一金屬層220位於第一接合區204A上。在本實施例中,第一金屬層220包括位於第一接合區204A上的第一金屬接墊222以及位於第二接合區204B上的第一金屬接墊222,且兩個第一金屬接墊222彼此分離。在一些實施例中,第一金屬層220與閘極G屬於相同導電層。舉例來說,第一金屬接墊222與閘極G是於同一道圖案化製程(例如微影蝕刻製程)中形成,且第一金屬接墊222與閘極G皆位於閘極絕緣層GI上。在一些實施例中,第一金屬層220與閘極G的材料包括金、銀、銅、鋁、鉬、鈦或其他金屬或包含前述金屬的合金,第一金屬層220與閘極G的厚度T1例如為1800埃至2200埃。第一金屬層220與閘極G為單層或多層結構。The
第一絕緣層I1位於第一金屬層220上,且具有重疊於第一金屬層220的多個第一通孔TH1。第一絕緣層I1例如為平坦層,且材料包括無機材料(例如:氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述至少二種材料的堆疊層)、有機材料(例如:聚酯類(PET)、聚烯類、聚丙醯類、聚碳酸酯類、聚環氧烷類、聚苯烯類、聚醚類、聚酮類、聚醇類、聚醛類或其它合適的材料或上述之組合)或其它合適的材料或上述之組合,第一絕緣層I1的厚度T2例如為6500埃至7900埃。第一絕緣層I1單層或多層結構。The first insulating layer I1 is located on the
第二金屬層230位於第一絕緣層I1上,且第二金屬層230包括彼此分離的多個第二金屬接墊232。第二金屬接墊232位於第一通孔TH1中,並直接連接第一金屬接墊222。在本實施例中,第二金屬接墊232排列成點狀分佈的陣列。第二金屬接墊230凸出第一絕緣層I1的上表面F1,其中第一絕緣層I1的上表面F1面對天線基板10。第二金屬層230的材料包括金、銀、銅、鋁、鉬、鈦或其他金屬,或包含前述金屬的合金,第二金屬接墊232凸出第一絕緣層I1的厚度T3例如為2900埃至3500埃,第二金屬層230為單層或多層結構。The
第一金屬層220或第二金屬層230電性連接至驅動電路210中的主動元件T。舉例來說,兩個主動元件T的汲極D分別透過兩個開口O3而直接連接至第一接合區204A上的第一金屬接墊222以及第二接合區204B上的第一金屬接墊222,其中開口O3貫穿第一絕緣層I1。The
在本實施例中,第一金屬接墊222各自直接連接至多個第二金屬接墊232。一個第一金屬接墊222重疊於多個第二金屬接墊232。In this embodiment, each of the
在一些實施例中,第二金屬接墊232、源極S以及汲極D屬於相同導電層。舉例來說,第二金屬接墊232、源極S以及汲極D是於同一道圖案化製程(例如微影蝕刻製程)中形成,且第二金屬接墊232、源極S以及汲極D皆位於第一絕緣層I1上。In some embodiments, the
第二絕緣層I2位於第二金屬層230(第二金屬接墊232)、源極S以及汲極D上。第二絕緣層I2材料包括無機材料(例如:氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述至少二種材料的堆疊層)、有機材料(例如:聚酯類(PET)、聚烯類、聚丙醯類、聚碳酸酯類、聚環氧烷類、聚苯烯類、聚醚類、聚酮類、聚醇類、聚醛類或其它合適的材料或上述之組合)或其它合適的材料或上述之組合,第二絕緣層I2的厚度T4例如為1750埃至3300埃。第二絕緣層I2單層或多層結構。The second insulating layer I2 is located on the second metal layer 230 (the second metal pad 232 ), the source electrode S and the drain electrode D. The material of the second insulating layer I2 includes inorganic materials (such as silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a stacked layer of at least two of the above materials), organic materials (such as polyester (PET) , polyolefins, polypropylenes, polycarbonates, polyalkylene oxides, polystyrenes, polyethers, polyketones, polyalcohols, polyaldehydes or other suitable materials or a combination of the above) Or other suitable materials or a combination of the above, the thickness T4 of the second insulating layer I2 is, for example, 1750 angstroms to 3300 angstroms. The second insulating layer I2 has a single-layer or multi-layer structure.
在本實施例中,第二絕緣層I2共形於第二金屬層230、源極S以及汲極D。舉例來說,第二絕緣層I2從第一絕緣層I1的上表面F1沿著第二金屬接墊232的側面延伸至第二金屬接墊232的上表面F2。在本實施例中,於垂直基板200的方向E1上,第二絕緣層I2重疊於第二金屬接墊232的部分與不重疊於第二金屬接墊232的部分具有高度差。換句話說,在第一接合區204A與第二接合區204B上,第二絕緣層I2的上表面F3為高低起伏的表面,其中上表面F3朝向天線基板10。第二絕緣層I2具有重疊於第二金屬接墊232的上表面F2的多個第二通孔TH2。In this embodiment, the second insulating layer I2 is conformally formed on the
透明導電層240位於第二絕緣層I2的第二通孔TH2中,並直接連接第二金屬接墊232。透明導電層240的製造方法例如包括微影蝕刻製程。在本實施例中,透明導電層240包括多個透明導電接墊242,每個第二通孔TH2中設置有對應的一個透明導電接墊242,且每個透明導電接墊242直接連接對應的一個第二金屬接墊232。一個第一金屬接墊222透過多個第二金屬接墊232而電性連接至多個透明導電接墊242。The transparent
在本實施例中,第一接合區204A上之第一金屬層220(一個第一金屬接墊222)、第二金屬層230(多個第二金屬接墊232)以及透明導電層240(多個透明導電接墊242)構成第一接墊P1,第二接合區204B上之第一金屬層220(一個第一金屬接墊222)、第二金屬層230(多個第二金屬接墊232)以及透明導電層240(多個透明導電接墊242)構成第二接墊P2。第一接墊P1於基板200上的垂直投影面積大於或等於40000平方微米,且第二接墊P2於基板200上的垂直投影面積大於或等於40000平方微米。In this embodiment, the first metal layer 220 (a first metal pad 222 ), the second metal layer 230 (a plurality of second metal pads 232 ) and the transparent conductive layer 240 (a plurality of second metal pads 232 ) on the
透明導電層240凸出第二絕緣層I2的上表面F3。在本實施例中,在第一接合區204A與第二接合區204B上,透明導電層240的上表面F4共形於第二絕緣層I2之高低起伏的上表面F3。在本實施例中,在第一接合區204A與第二接合區204B上,透明導電層240的上表面F4最遠離基板200的部分與第二絕緣層I2的上表面F3最靠近基板200的部分具有高度差HD,其中高度差HD為3200埃至4200埃。The transparent
透明導電層240構成排成點狀分佈的陣列AR的多個凸起結構。在本實施例中,凸起結構彼此分離,且每個透明導電接墊242即為一個凸起結構。在其他實施例中,每個透明導電接墊242包括多個凸起結構。點狀分佈的凸起結構可以提升第一接墊P1與天線基板10之間的摩擦力以及第二接墊P2與天線基板10之間的摩擦力,藉此改善電路裝置20與天線基板10在加壓接合時發生滑動的問題。The transparent
透明導電層240例如為銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鎵鋅氧化物、或是上述至少二者之堆疊層。The transparent
各凸起結構(透明導電接墊242)朝外的表面F4與第二絕緣層I2的上表面F3之間的夾角θ為30度至60度。各凸起結構(透明導電接墊242)的頂面寬度W1大於或等於相鄰兩個凸起結構(透明導電接墊242)底部之間的距離W2。藉此能使電路裝置20與天線基板10之間具有較大的接合面積。在一些實施例中,各凸起結構(透明導電接墊242)的頂面寬度W1比上相鄰兩個凸起結構底部之間的距離W2為1:1至2:1。舉例來說,頂面寬度W1為20微米至60微米,距離W2為10微米至60微米。The included angle θ between the outward facing surface F4 of each protruding structure (transparent conductive pad 242 ) and the upper surface F3 of the second insulating layer I2 is 30 degrees to 60 degrees. The top surface width W1 of each protruding structure (transparent conductive pad 242 ) is greater than or equal to the distance W2 between the bottoms of two adjacent protruding structures (transparent conductive pad 242 ). Thereby, a larger bonding area can be provided between the
在本實施例中,凸起結構之間具有相連的網狀排膠溝槽MT,且網狀排膠溝槽MT於陣列AR的側面以及正面開放。在本實施例中,網狀排膠溝槽MT的寬度約等於相鄰兩個凸起結構底部之間的距離W2。在本實施例中,當天線基板10與電路裝置20接合時,網狀排膠溝槽MT可以作為導電黏著層300A、300B的溢流通道,使多餘的導電黏著層300A、300B可以沿著網狀排膠溝槽MT排除。In this embodiment, the protruding structures are connected with a mesh-shaped glue removal groove MT, and the mesh-shaped glue removal groove MT is open on the side and the front of the array AR. In this embodiment, the width of the mesh-shaped glue removal groove MT is approximately equal to the distance W2 between the bottoms of two adjacent raised structures. In this embodiment, when the
基於上述,第一金屬接墊222直接連接多個第二金屬接墊232,並透過多個第二金屬接墊232而電性連接至多個透明導電接墊242,因此,多個第二金屬接墊232之間的空隙以及多個透明導電接墊242之間的空隙可以避免接墊在接合區彎曲後出現破裂的問題,藉此提升接合製程的良率。Based on the above, the
圖4A是依照本發明的一實施例的一種天線裝置的剖面示意圖。為了方便說明,圖4A省略繪示了電路區上的部份元件。圖4B是圖4A的電路裝置的第一接合區的仰視示意圖。在此必須說明的是,圖4A和圖4B的實施例沿用圖3A和圖3B的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。4A is a schematic cross-sectional view of an antenna device according to an embodiment of the present invention. For convenience of description, FIG. 4A omits and illustrates some components on the circuit area. FIG. 4B is a schematic bottom view of the first bonding area of the circuit arrangement of FIG. 4A . It must be noted here that the embodiments of FIGS. 4A and 4B use the element numbers and part of the content of the embodiments of FIGS. 3A and 3B , wherein the same or similar numbers are used to represent the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.
圖4A的天線裝置3與圖3A的天線裝置2的主要差異在於:圖4A的電路裝置20a中,一個透明導電接墊242直接連接多個第二金屬接墊232,且透過多個第二金屬接墊232而電性連接至多個第一金屬接墊222。The main difference between the
請參考圖4A與圖4B,在本實施例中,第一接合區204A上之第一金屬層220包括彼此分離的多個第一金屬接墊222,且第一接合區204A上之透明導電層240包括一個透明導電接墊242;第二接合區204B上之第一金屬層220包括彼此分離的多個第一金屬接墊222,且第二接合區204B上之透明導電層240包括一個透明導電接墊242。Referring to FIGS. 4A and 4B , in this embodiment, the
第一接合區204A上之第一金屬層220(多個第一金屬接墊222)、第二金屬層230(多個第二金屬接墊232)以及透明導電層240(一個透明導電接墊242)構成第一接墊P1,第二接合區204B上之第一金屬層220(多個第一金屬接墊222)、第二金屬層230(多個第二金屬接墊232)以及透明導電層240(一個透明導電接墊242)構成第二接墊P2。The first metal layer 220 (a plurality of first metal pads 222 ), the second metal layer 230 (a plurality of second metal pads 232 ), and the transparent conductive layer 240 (one transparent conductive pad 242 ) on the
在本實施例中,透明導電層240構成排成點狀分佈的陣列AR的多個凸起結構242a。在本實施例中,第一接合區204A上之凸起結構242a彼此相連,且每個透明導電接墊242包括多個凸起結構242a。點狀分佈的凸起結構242a可以提升第一接墊P1與天線基板10之間的摩擦力以及第二接墊P2與天線基板10之間的摩擦力,藉此改善電路裝置20a與天線基板10在加壓接合時發生滑動錯位的問題。In this embodiment, the transparent
在本實施例中,在第一接合區204A與第二接合區204B上,於垂直基板200的方向E1上,第二金屬接墊232的上表面F2與第二絕緣層I2的上表面F3凸起之部分之間的厚度T5為1750埃至3300埃。在第一接合區204A與第二接合區204B上,凸起結構242a的表面F4最遠離基板200的部分與凸起結構242a的表面F4最靠近基板200的部分具有高度差HD,其中高度差HD為4700埃至5700埃。In this embodiment, on the
各凸起結構242a朝外的表面F4與第二絕緣層I2的上表面F3之間的夾角θ為30度至60度。各凸起結構242a的頂面寬度W1大於或等於相鄰兩個凸起結構242A底部之間的距離W2。藉此能使電路裝置20A與天線基板10之間具有較大的接合面積。在一些實施例中,各凸起結構的頂面寬度比上相鄰兩個凸起結構底部之間的距離為1:1至2:1。舉例來說,頂面寬度W1為20微米至60微米,距離W2為10微米至60微米。The angle θ between the outward facing surface F4 of each protruding
在本實施例中,凸起結構之間具有相連的網狀排膠溝槽MT,且網狀排膠溝槽MT於陣列AR的側面以及正面開放。在本實施例中,網狀排膠溝槽MT的寬度約等於相鄰兩個凸起結構底部之間的距離W2。在本實施例中,當天線基板10與電路裝置20接合時,網狀排膠溝槽MT可以作為導電黏著層300A、300B的溢流通道,使多餘的導電黏著層300A、300B可以沿著網狀排膠溝槽MT排除。In this embodiment, the protruding structures are connected with a mesh-shaped glue removal groove MT, and the mesh-shaped glue removal groove MT is open on the side and the front of the array AR. In this embodiment, the width of the mesh-shaped glue removal groove MT is approximately equal to the distance W2 between the bottoms of two adjacent raised structures. In this embodiment, when the
在本實施例中,兩個主動元件T的汲極D分別直接連接至第一接合區204A上的第一金屬接墊222以及第二接合區204B上的第一金屬接墊222。In this embodiment, the drains D of the two active elements T are directly connected to the
基於上述,透明導電接墊242直接連接多個第二金屬接墊232,並透過多個第二金屬接墊232而電性連接至多個第一金屬接墊222,因此,多個第二金屬接墊232之間的空隙以及多個第一金屬接墊222之間的空隙可以避免接墊在接合區彎曲後出現破裂的問題,藉此提升接合製程的良率。Based on the above, the transparent
圖5是依照本發明的一實施例的一種電路裝置的仰視示意圖。在此必須說明的是,圖5的實施例沿用圖2的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。5 is a schematic bottom view of a circuit device according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 5 uses the element numbers and part of the content of the embodiment of FIG. 2 , wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.
圖5的電路裝置20b與圖2的電路裝置20的主要差異在於:圖5的電路裝置20b中,基板200更包括第三接合區204C與第四接合區204D,第一接合區204A與第三接合區204C位於電路區202的同一側,且第二接合區204B與第四接合區204D位於電路區202的同一側。The main difference between the
在本實施例中,第一接合區204A、第二接合區204B、第三接合區204C與第四接合區204D上分別包括第一接墊(圖5省略繪出)、第二接墊(圖5省略繪出)、第三接墊(圖5省略繪出)與第四接墊(圖5省略繪出),其中第一接墊、第二接墊、第三接墊與第四接墊的結構類似於前述任一實施例中的第一接墊與第二接墊,於此不再贅述。In this embodiment, the
綜上所述,第一金屬接墊直接連接多個第二金屬接墊,並透過多個第二金屬接墊而電性連接至多個透明導電接墊;或透明導電接墊直接連接多個第二金屬接墊,並透過多個第二金屬接墊而電性連接至多個第一金屬接墊。因此,金屬接墊之間的空隙及/或透明導電接墊之間的空隙可以避免接墊在接合區彎曲後出現破裂的問題,藉此提升接合製程的良率。另外,透明導電接墊構成之點狀分佈的凸起結構可以改善電路裝置與其他裝置在加壓接合時發生滑動錯位的問題,且透明導電接墊上的網狀排膠溝槽可以作為導電黏著層的溢流通道,使多餘的導電黏著層可以沿著網狀排膠溝槽排除。To sum up, the first metal pads are directly connected to the plurality of second metal pads, and are electrically connected to the plurality of transparent conductive pads through the plurality of second metal pads; or the transparent conductive pads are directly connected to the plurality of first metal pads. Two metal pads are electrically connected to the plurality of first metal pads through the plurality of second metal pads. Therefore, the gaps between the metal pads and/or the gaps between the transparent conductive pads can avoid the problem of cracking of the pads after the bonding area is bent, thereby improving the yield of the bonding process. In addition, the dot-shaped raised structures formed by the transparent conductive pads can improve the problem of sliding dislocation when the circuit device and other devices are press-bonded, and the mesh-shaped glue-removing grooves on the transparent conductive pads can be used as a conductive adhesive layer The overflow channel allows the excess conductive adhesive layer to be drained along the mesh-shaped glue removal groove.
1、2:天線裝置
10:天線基板
20、20a、20b:電路裝置
100、200:基板
110:天線
120A:第一天線接墊
120B:第二天線接墊
202:電路區
204A:第一接合區
204B:第二接合區
204C:第三接合區
204D:第四接合區
210:驅動電路
212:數位電路
214:整流器
216:分頻器
220:第一金屬層
222:第一金屬接墊
230:第二金屬層
232:第二金屬接墊
240:透明導電層
242:透明導電接墊
242a:凸起結構
300A、300B:導電黏著層
AR:陣列
CH:多晶矽層
CH1:源極區
CH2:通道區
CH3:汲極區
D:汲極
E1:方向
F1、F2、F3、F4:表面
I1:第一絕緣層
I2:第二絕緣層
G:閘極
GI:閘極絕緣層
HD:高度差
O1、O2、O3:開口
P1:第一接墊
P2:第二接墊
S:源極
T:主動元件
T1、T2、T3、T4、T5:厚度
TH1:第一通孔
TH2:第二通孔
MT:網狀排膠溝槽
W1:寬度
W2:距離
θ:夾角1, 2: Antenna device
10:
圖1是依照本發明的一實施例的一種天線裝置的俯視示意圖。 圖2是依照本發明的一實施例的一種電路裝置的仰視示意圖。 圖3A是依照本發明的一實施例的一種天線裝置的剖面示意圖。 圖3B是圖3A的電路裝置的第一接合區的仰視示意圖。 圖4A是依照本發明的一實施例的一種天線裝置的剖面示意圖。 圖4B是圖4A的電路裝置的第一接合區的仰視示意圖。 圖5是依照本發明的一實施例的一種電路裝置的仰視示意圖。FIG. 1 is a schematic top view of an antenna device according to an embodiment of the present invention. FIG. 2 is a schematic bottom view of a circuit device according to an embodiment of the present invention. 3A is a schematic cross-sectional view of an antenna device according to an embodiment of the present invention. 3B is a schematic bottom view of the first bonding area of the circuit arrangement of FIG. 3A. 4A is a schematic cross-sectional view of an antenna device according to an embodiment of the present invention. FIG. 4B is a schematic bottom view of the first bonding area of the circuit arrangement of FIG. 4A . 5 is a schematic bottom view of a circuit device according to an embodiment of the present invention.
2:天線裝置2: Antenna device
10:天線基板10: Antenna substrate
20:電路裝置20: Circuit device
100、200:基板100, 200: substrate
110:天線110: Antenna
120A:第一天線接墊120A: first antenna pad
120B:第二天線接墊120B: The second antenna pad
202:電路區202: Circuit Area
204A:第一接合區204A: First bonding area
204B:第二接合區204B: Second junction area
220:第一金屬層220: first metal layer
222:第一金屬接墊222: first metal pad
230:第二金屬層230: second metal layer
232:第二金屬接墊232: Second metal pad
240:透明導電層240: transparent conductive layer
242:透明導電接墊242: Transparent conductive pad
300A、300B:導電黏著層300A, 300B: conductive adhesive layer
AR:陣列AR: Array
CH:多晶矽層CH: polysilicon layer
CH1:源極區CH1: source region
CH2:通道區CH2: Channel area
CH3:汲極區CH3: drain region
D:汲極D: drain
E1:方向E1: Direction
F1、F2、F3、F4:表面F1, F2, F3, F4: Surface
I1:第一絕緣層I1: first insulating layer
I2:第二絕緣層I2: Second insulating layer
G:閘極G: gate
GI:閘極絕緣層GI: gate insulating layer
HD:高度差HD: Height difference
O1、O2、O3:開口O1, O2, O3: Opening
P1:第一接墊P1: first pad
P2:第二接墊P2: Second pad
S:源極S: source
T:主動元件T: Active element
T1、T2、T3、T4:厚度T1, T2, T3, T4: Thickness
TH1:第一通孔TH1: first through hole
TH2:第二通孔TH2: second through hole
W1:寬度W1: width
W2:距離W2: Distance
θ:夾角θ: included angle
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TW202119879A (en) | 2021-05-16 |
TWI763081B (en) | 2022-05-01 |
TW202119164A (en) | 2021-05-16 |
TW202119291A (en) | 2021-05-16 |
TWI743882B (en) | 2021-10-21 |
TWI766412B (en) | 2022-06-01 |
TW202205052A (en) | 2022-02-01 |
TWI815156B (en) | 2023-09-11 |
TWI741606B (en) | 2021-10-01 |
TW202119596A (en) | 2021-05-16 |
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