TWI762146B - 基板加熱裝置、基板加熱方法以及紅外線加熱器 - Google Patents

基板加熱裝置、基板加熱方法以及紅外線加熱器 Download PDF

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Publication number
TWI762146B
TWI762146B TW110100792A TW110100792A TWI762146B TW I762146 B TWI762146 B TW I762146B TW 110100792 A TW110100792 A TW 110100792A TW 110100792 A TW110100792 A TW 110100792A TW I762146 B TWI762146 B TW I762146B
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TW
Taiwan
Prior art keywords
substrate
infrared heater
infrared
heating
unit
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TW110100792A
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English (en)
Chinese (zh)
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TW202129767A (zh
Inventor
加藤茂
佐保田勉
山谷謙一
升芳明
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日商東京應化工業股份有限公司
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Publication of TW202129767A publication Critical patent/TW202129767A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Drying Of Solid Materials (AREA)
  • Furnace Details (AREA)
TW110100792A 2016-08-30 2017-07-14 基板加熱裝置、基板加熱方法以及紅外線加熱器 TWI762146B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016167793A JP6757629B2 (ja) 2016-08-30 2016-08-30 基板加熱装置、基板加熱方法及び赤外線ヒータ
JP2016-167793 2016-08-30

Publications (2)

Publication Number Publication Date
TW202129767A TW202129767A (zh) 2021-08-01
TWI762146B true TWI762146B (zh) 2022-04-21

Family

ID=61437446

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106123574A TWI729167B (zh) 2016-08-30 2017-07-14 基板加熱裝置、基板加熱方法以及紅外線加熱器
TW110100792A TWI762146B (zh) 2016-08-30 2017-07-14 基板加熱裝置、基板加熱方法以及紅外線加熱器

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW106123574A TWI729167B (zh) 2016-08-30 2017-07-14 基板加熱裝置、基板加熱方法以及紅外線加熱器

Country Status (4)

Country Link
JP (1) JP6757629B2 (ja)
KR (3) KR102336748B1 (ja)
CN (1) CN107785240B (ja)
TW (2) TWI729167B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111383944A (zh) * 2018-12-29 2020-07-07 东京应化工业株式会社 基板加热装置、基板处理系统以及基板加热方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW526378B (en) * 1999-12-27 2003-04-01 Matsushita Electric Ind Co Ltd Liquid crystal display apparatus and method for driving the same
JP2005019479A (ja) * 2003-06-23 2005-01-20 Tokyo Electron Ltd 加熱手段、載置台及び熱処理装置
US20080098833A1 (en) * 2006-10-26 2008-05-01 Tokyo Electron Limited Apparatus and method for evaluating a substrate mounting device
CN101962759A (zh) * 2009-07-21 2011-02-02 深圳市宇光高科新能源技术有限公司 一种带有内加热器的pecvd系统
JP2011117678A (ja) * 2009-12-04 2011-06-16 Toppan Printing Co Ltd 基板乾燥方法、基板乾燥装置、基板の製造方法、及びフラットパネルディスプレイ
JP2013089633A (ja) * 2011-10-13 2013-05-13 Tokyo Electron Ltd 減圧乾燥装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3060663B2 (ja) * 1991-11-15 2000-07-10 井関農機株式会社 トラクタの伝動ケース接続構造
JP3060633U (ja) * 1998-12-28 1999-09-07 アイリスオーヤマ株式会社 組立式チェスト
JP3060663U (ja) * 1998-12-29 1999-09-07 クリーン・テクノロジー株式会社 加熱装置
JP2001210632A (ja) 2000-01-28 2001-08-03 Sharp Corp ポリイミド膜の形成方法
JP3798674B2 (ja) * 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP4033809B2 (ja) * 2003-06-16 2008-01-16 東京エレクトロン株式会社 熱処理装置及び熱処理方法
JP2006170524A (ja) 2004-12-15 2006-06-29 Tdk Corp 焼成炉
WO2009104371A1 (ja) 2008-02-20 2009-08-27 シャープ株式会社 フレキシブル半導体基板の製造方法
JP2012250230A (ja) * 2011-06-02 2012-12-20 Tokyo Ohka Kogyo Co Ltd 加熱装置、塗布装置及び加熱方法
JP2015133444A (ja) * 2014-01-15 2015-07-23 株式会社東芝 半導体製造装置および半導体装置の製造方法
JP2015141965A (ja) * 2014-01-28 2015-08-03 東京応化工業株式会社 回収装置及び基板処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW526378B (en) * 1999-12-27 2003-04-01 Matsushita Electric Ind Co Ltd Liquid crystal display apparatus and method for driving the same
JP2005019479A (ja) * 2003-06-23 2005-01-20 Tokyo Electron Ltd 加熱手段、載置台及び熱処理装置
US20080098833A1 (en) * 2006-10-26 2008-05-01 Tokyo Electron Limited Apparatus and method for evaluating a substrate mounting device
CN101962759A (zh) * 2009-07-21 2011-02-02 深圳市宇光高科新能源技术有限公司 一种带有内加热器的pecvd系统
JP2011117678A (ja) * 2009-12-04 2011-06-16 Toppan Printing Co Ltd 基板乾燥方法、基板乾燥装置、基板の製造方法、及びフラットパネルディスプレイ
JP2013089633A (ja) * 2011-10-13 2013-05-13 Tokyo Electron Ltd 減圧乾燥装置

Also Published As

Publication number Publication date
JP2018037191A (ja) 2018-03-08
KR20210100054A (ko) 2021-08-13
CN107785240A (zh) 2018-03-09
JP6757629B2 (ja) 2020-09-23
CN107785240B (zh) 2023-06-20
KR20220109367A (ko) 2022-08-04
TW202129767A (zh) 2021-08-01
KR102336748B1 (ko) 2021-12-07
KR20180025177A (ko) 2018-03-08
TW201807756A (zh) 2018-03-01
TWI729167B (zh) 2021-06-01

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