KR102336748B1 - 기판 가열 장치, 기판 가열 방법 및 적외선 히터 - Google Patents

기판 가열 장치, 기판 가열 방법 및 적외선 히터 Download PDF

Info

Publication number
KR102336748B1
KR102336748B1 KR1020170096211A KR20170096211A KR102336748B1 KR 102336748 B1 KR102336748 B1 KR 102336748B1 KR 1020170096211 A KR1020170096211 A KR 1020170096211A KR 20170096211 A KR20170096211 A KR 20170096211A KR 102336748 B1 KR102336748 B1 KR 102336748B1
Authority
KR
South Korea
Prior art keywords
substrate
infrared heater
heating
infrared
bend
Prior art date
Application number
KR1020170096211A
Other languages
English (en)
Korean (ko)
Other versions
KR20180025177A (ko
Inventor
시게루 가토
츠토무 사호다
겐이치 야마야
요시아키 마스
Original Assignee
도오꾜오까고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도오꾜오까고오교 가부시끼가이샤 filed Critical 도오꾜오까고오교 가부시끼가이샤
Publication of KR20180025177A publication Critical patent/KR20180025177A/ko
Priority to KR1020210102169A priority Critical patent/KR20210100054A/ko
Application granted granted Critical
Publication of KR102336748B1 publication Critical patent/KR102336748B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Drying Of Solid Materials (AREA)
  • Furnace Details (AREA)
KR1020170096211A 2016-08-30 2017-07-28 기판 가열 장치, 기판 가열 방법 및 적외선 히터 KR102336748B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210102169A KR20210100054A (ko) 2016-08-30 2021-08-03 기판 가열 장치, 기판 가열 방법 및 적외선 히터

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016167793A JP6757629B2 (ja) 2016-08-30 2016-08-30 基板加熱装置、基板加熱方法及び赤外線ヒータ
JPJP-P-2016-167793 2016-08-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020210102169A Division KR20210100054A (ko) 2016-08-30 2021-08-03 기판 가열 장치, 기판 가열 방법 및 적외선 히터

Publications (2)

Publication Number Publication Date
KR20180025177A KR20180025177A (ko) 2018-03-08
KR102336748B1 true KR102336748B1 (ko) 2021-12-07

Family

ID=61437446

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020170096211A KR102336748B1 (ko) 2016-08-30 2017-07-28 기판 가열 장치, 기판 가열 방법 및 적외선 히터
KR1020210102169A KR20210100054A (ko) 2016-08-30 2021-08-03 기판 가열 장치, 기판 가열 방법 및 적외선 히터
KR1020220091268A KR20220109367A (ko) 2016-08-30 2022-07-22 기판 가열 장치, 기판 가열 방법 및 적외선 히터

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020210102169A KR20210100054A (ko) 2016-08-30 2021-08-03 기판 가열 장치, 기판 가열 방법 및 적외선 히터
KR1020220091268A KR20220109367A (ko) 2016-08-30 2022-07-22 기판 가열 장치, 기판 가열 방법 및 적외선 히터

Country Status (4)

Country Link
JP (1) JP6757629B2 (ja)
KR (3) KR102336748B1 (ja)
CN (1) CN107785240B (ja)
TW (2) TWI729167B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111383944A (zh) * 2018-12-29 2020-07-07 东京应化工业株式会社 基板加热装置、基板处理系统以及基板加热方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3060663B2 (ja) * 1991-11-15 2000-07-10 井関農機株式会社 トラクタの伝動ケース接続構造
JP2005011852A (ja) 2003-06-16 2005-01-13 Tokyo Electron Ltd 熱処理装置及び熱処理方法
JP2005019479A (ja) * 2003-06-23 2005-01-20 Tokyo Electron Ltd 加熱手段、載置台及び熱処理装置
JP2015141965A (ja) * 2014-01-28 2015-08-03 東京応化工業株式会社 回収装置及び基板処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3060633U (ja) * 1998-12-28 1999-09-07 アイリスオーヤマ株式会社 組立式チェスト
JP3060663U (ja) * 1998-12-29 1999-09-07 クリーン・テクノロジー株式会社 加熱装置
KR100457189B1 (ko) * 1999-12-27 2004-11-16 마쯔시다덴기산교 가부시키가이샤 액정표시장치 및 그 구동방법
JP2001210632A (ja) 2000-01-28 2001-08-03 Sharp Corp ポリイミド膜の形成方法
JP3798674B2 (ja) * 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP2006170524A (ja) 2004-12-15 2006-06-29 Tdk Corp 焼成炉
US8573836B2 (en) * 2006-10-26 2013-11-05 Tokyo Electron Limited Apparatus and method for evaluating a substrate mounting device
WO2009104371A1 (ja) 2008-02-20 2009-08-27 シャープ株式会社 フレキシブル半導体基板の製造方法
CN101962759B (zh) * 2009-07-21 2012-07-25 深圳市宇光高科新能源技术有限公司 一种带有内加热器的pecvd系统
JP5428811B2 (ja) * 2009-12-04 2014-02-26 凸版印刷株式会社 基板乾燥方法、基板乾燥装置、基板の製造方法、及びフラットパネルディスプレイ
JP2012250230A (ja) * 2011-06-02 2012-12-20 Tokyo Ohka Kogyo Co Ltd 加熱装置、塗布装置及び加熱方法
JP5622701B2 (ja) * 2011-10-13 2014-11-12 東京エレクトロン株式会社 減圧乾燥装置
JP2015133444A (ja) * 2014-01-15 2015-07-23 株式会社東芝 半導体製造装置および半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3060663B2 (ja) * 1991-11-15 2000-07-10 井関農機株式会社 トラクタの伝動ケース接続構造
JP2005011852A (ja) 2003-06-16 2005-01-13 Tokyo Electron Ltd 熱処理装置及び熱処理方法
JP2005019479A (ja) * 2003-06-23 2005-01-20 Tokyo Electron Ltd 加熱手段、載置台及び熱処理装置
JP2015141965A (ja) * 2014-01-28 2015-08-03 東京応化工業株式会社 回収装置及び基板処理装置

Also Published As

Publication number Publication date
JP2018037191A (ja) 2018-03-08
KR20210100054A (ko) 2021-08-13
CN107785240A (zh) 2018-03-09
JP6757629B2 (ja) 2020-09-23
CN107785240B (zh) 2023-06-20
KR20220109367A (ko) 2022-08-04
TW202129767A (zh) 2021-08-01
KR20180025177A (ko) 2018-03-08
TW201807756A (zh) 2018-03-01
TWI729167B (zh) 2021-06-01
TWI762146B (zh) 2022-04-21

Similar Documents

Publication Publication Date Title
KR102320301B1 (ko) 기판 가열 장치 및 기판 가열 방법
TWI703688B (zh) 基板加熱裝置及基板加熱方法
KR102467956B1 (ko) 기판 가열 장치, 기판 처리 시스템 및 기판 가열 방법
KR20220109367A (ko) 기판 가열 장치, 기판 가열 방법 및 적외선 히터
JP7178823B2 (ja) 基板加熱装置および基板処理システム
JP7154046B2 (ja) ポリイミド焼成方法およびポリイミド焼成装置
JP6718950B2 (ja) 基板加熱装置及びポリイミド膜の製造方法
KR102469840B1 (ko) 기판 가열 장치, 기판 처리 시스템 및 기판 가열 방법
TW201705370A (zh) 用於加工基板的裝置
JP7236284B2 (ja) 基板加熱装置および基板処理システム

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant