TWI758683B - 成膜裝置 - Google Patents
成膜裝置 Download PDFInfo
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- TWI758683B TWI758683B TW109103433A TW109103433A TWI758683B TW I758683 B TWI758683 B TW I758683B TW 109103433 A TW109103433 A TW 109103433A TW 109103433 A TW109103433 A TW 109103433A TW I758683 B TWI758683 B TW I758683B
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- 230000008021 deposition Effects 0.000 title abstract 5
- 239000011347 resin Substances 0.000 claims abstract description 54
- 229920005989 resin Polymers 0.000 claims abstract description 54
- 238000009792 diffusion process Methods 0.000 claims abstract description 41
- 239000002994 raw material Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 106
- 230000015572 biosynthetic process Effects 0.000 description 31
- 239000000463 material Substances 0.000 description 15
- 238000009826 distribution Methods 0.000 description 6
- 239000006200 vaporizer Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
本發明所提供的成膜裝置係具備:腔室,係具有成膜室;台,係將基板予以支撐;光源單元;氣體供給部;以及加熱部。上述光源單元係具有將能量線予以照射的照射源,且與前述成膜室對向地配置。上述氣體供給部係具有簇射板與氣體擴散室。上述簇射板係使上述能量線穿透,且包含:第一面,係與上述光源單元對向;第二面,係與上述台對向;以及複數個貫通孔,係貫通上述第一面及上述第二面。上述氣體擴散室係面對上述第一面且使原料氣體擴散,上述原料氣體係包含受到上述能量線的照射而硬化的能量線硬化樹脂。上述氣體供給部係將上述原料氣體從上述氣體擴散室供給到上述成膜室。上述加熱部係將上述簇射板的上述第一面予以加熱。
Description
本發明係關於一種成膜裝置,係形成由能量線硬化樹脂所構成之樹脂層。
在將紫外線硬化樹脂等的能量線硬化樹脂予以硬化而在基板上形成樹脂層時,典型來說進行以下的兩個步驟。亦即,藉由冷卻台來支撐基板且將包含該樹脂之原料氣體供給到由冷卻台所支撐的基板上的步驟以及將紫外線等的光照射於基板上且在基板上形成已硬化之樹脂層的步驟。
特別是在最近提供有一種成膜裝置,不分別在不同的真空腔室進行此種複數個步驟,而是在一個真空腔室內進行以下步驟:將原料氣體供給到基板上的步驟;以及藉由紫外線等在基板上形成已硬化之樹脂層的步驟。例如,於專利文獻1係記載有具有氣體供給部的成膜裝置,該氣體供給部係包含將原料氣體予以噴出的配管。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2013-064187號公報。
[發明所欲解決之課題]
然而,在專利文獻1所記載之成膜裝置中,於原料氣體從配管所噴出之情形下,有在基板上所形成之樹脂層的膜厚分布會產生偏差而得不到期望之成膜品質的情形。又,生產性有可能因配管等氣體供給部中的樹脂之堆積而降低。
有鑑於以上般的事情,本發明之目的係在於提供一種能夠使成膜品質及生產性提升的成膜裝置。
[用以解決課題之手段]
為了達成上述目的,本發明的一形態之成膜裝置係具備:腔室(chamber)、台(stage)、光源單元、氣體供給部及加熱部。
上述腔室係具有成膜室。
上述台係被配置於上述成膜室,且將基板予以支撐。
上述光源單元係具有將能量線予以照射的照射源,且與前述成膜室對向地配置。
上述氣體供給部係具有簇射板(shower plate)與氣體擴散室。
上述簇射板係使上述能量線穿透,且包含:第一面,係與上述光源單元對向;第二面,係與上述台對向;以及複數個貫通孔,係貫通上述第一面及上述第二面。
上述氣體擴散室係面對上述第一面且使原料氣體擴散,上述原料氣體係包含受到上述能量線的照射而硬化的能量線硬化樹脂。
上述氣體供給部係將上述原料氣體從上述氣體擴散室供給到上述成膜室。
上述加熱部係將上述簇射板的上述第一面予以加熱。
在該構成中,由於氣體供給部具有簇射板與氣體擴散室,故壓力由氣體擴散室所提高的原料氣體係從簇射板的複數個貫通孔向成膜室供給。藉此,能夠將向成膜室供給之原料氣體的流量予以均勻化,能夠將膜厚分布予以均勻化。因此,能夠提高成膜品質。進一步地,簇射板之氣體擴散室側的第一面係由加熱部所加熱。藉此,能夠防止能量線硬化樹脂附著在氣體擴散室的內壁及貫通孔,能夠抑制能量線之穿透率降低與貫通孔堵塞,提高生產性。
上述加熱部也可以具有形成於上述簇射板的上述第一面之透明導電膜。
藉此,第一面因透明導電膜所引起的電阻加熱而被加熱。因此,能夠確保簇射板中的能量線之穿透性,並且能夠使加熱部的維護保養(maintenance)容易化。
例如,上述透明導電膜也可包含ITO(Indium Tin Oxide;銦錫氧化物)。
藉此,透明導電膜能得到充分的能量線穿透性。
又,上述透明導電膜也可具有與上述複數個貫通孔連通之複數個孔。
藉此,即使在第一面的多數區域已由透明導電膜所被覆之情形下,也能夠供給原料氣體。
例如,上述簇射板也可由石英玻璃所構成。
藉此,能夠充分地確保簇射板之對於能量線的穿透性。
作為具體的構成來說,上述腔室也可進一步具有:開口部,係將上述成膜室朝向上述光源單元開放;以及頂板,係將上述開口部封塞且使上述能量線穿透;上述氣體擴散室也可構成為被上述頂板與上述簇射板所包夾的空間。
藉此,能夠利用腔室之頂板來形成氣體擴散室,且能夠降低零件數量。因此,能夠設成容易維護保養之構成。
[發明功效]
如以上所述般,根據本發明能夠使成膜品質及生產性提升。
以下,一邊參照圖式一邊說明本發明的實施形態。
圖1是表示本發明的一實施形態之成膜裝置100的概略剖視圖。在圖中,X軸方向及Y軸方向係表示相互正交的水平方向,Z軸方向係表示與X軸方向及Y軸方向正交的方向。
[成膜裝置]
成膜裝置100係構成為以下的成膜裝置:用以在基板W上形成由屬於能量線硬化樹脂之紫外線硬化樹脂所構成的層。成膜裝置100是用以在基板W上供給了包含紫外線硬化樹脂之原料氣體後,將紫外線照射在基板W上來形成紫外線硬化樹脂層的裝置。
成膜裝置100係具備腔室10、台15、光源單元20、氣體供給部30及加熱部40。
[腔室]
腔室10係具有:成膜室11;開口部13,係形成於成膜室11之上部;以及頂板12,係將開口部13氣密地封塞。
腔室10是上部開口之金屬製的真空容器,且在內部具有成膜室11。成膜室11係構成為:能夠經由連接在腔室10之底部的真空排氣系統19來排氣成或是維持成預定的減壓氛圍(reduced-pressure atmosphere)。
頂板12係使紫外線UV穿透。例如,頂板12係具有:窗部121,係使紫外線UV穿透;以及框部122,係支撐窗部121。窗部121係由石英玻璃等的紫外線穿透性材料所構成,框部122係由鋁合金等的金屬材料所構成。窗部121的數量並不特別限定,可以是兩個以上,也可以是單個。
[台]
台15係被配置於成膜室11且構成為能夠將基板W予以支撐。台15係由例如冷卻水等的冷卻媒體所冷卻。另外,也可以用將已被冷卻到上述預定溫度以下的基板W向成膜室11運送的方式構成。
基板W是玻璃基板,不過也可以是半導體基板。基板的形狀、大小並不特別限定,可以是矩形也可以是圓形。於基板W的成膜面也可事先形成有元件。在該情形下,成膜於基板W的樹脂層係具有作為上述元件之保護膜的功能。
[光源單元]
光源單元20係具有罩(cover)21與照射源22。罩21係被配置於頂板12之上,且具有將照射源22予以收容的光源室23。光源室23是例如大氣氛圍。照射源22是經由頂板12之窗部121來將作為能量線的紫外線(ultraviolet)UV朝向台15照射的光源,典型來說係由紫外線燈(ultraviolet lamp)所構成。不限於此,於照射源22也可採用發光出紫外線UV的複數個LED(Light Emitting Diode;發光二極體)排列成矩陣(matrix)狀的光源模組。
[氣體供給部]
氣體供給部30係將原料氣體向成膜室11供給,該原料氣體係包含受到紫外線UV之照射而硬化的樹脂(紫外線硬化樹脂)。氣體供給部30係具有簇射板31與氣體擴散室32。
簇射板31係具有板形狀,且由石英玻璃等的紫外線穿透性材料所構成。簇射板31係經由適當的固定構件而被固定於腔室10的內壁面。
簇射板31係具有:第一面311,係與光源單元20對向;第二面312,係與台15對向;以及複數個貫通孔313,係貫通第一面311及第二面312。
複數個貫通孔313係在厚度方向貫通簇射板31,且使氣體擴散室32與成膜室11相互地連通。貫通孔313係構成為能夠將原料氣體從氣體擴散室32向成膜室11供給。複數個貫通孔313可以在面內隔著固定的間隔而形成,也可以隔著不同的間隔而形成。又,各貫通孔313的徑可以相同也可以不同。
氣體擴散室32係使原料氣體擴散。例如,氣體擴散室32係構成為被頂板12與簇射板31所包夾的空間,且由頂板12、簇射板31及腔室10的側壁所劃分。於氣體擴散室32係經由原料氣體生成部101而導入有上述原料氣體。
以作為紫外線硬化樹脂材料來說,能夠使用例如丙烯酸(acrylic)系樹脂。又,於上述樹脂也能夠添加聚合起始劑等來使用。包含此種樹脂的原料氣體係由被設置於腔室10之外部的原料氣體生成部101所生成。原料氣體生成部101係經由配管130將包含上述樹脂的原料氣體向氣體供給部30之氣體擴散室32導入。
原料氣體生成部101係具有樹脂材料供給線路110、氣化器120及配管130。
樹脂材料供給線路110係具有:槽(tank)111,係填充有液狀的樹脂材料;以及配管112,係將樹脂材料從槽111向氣化器120運送。在從槽111向氣化器120之樹脂材料的運送中係使用有由例如氮等惰性氣體所構成的載體氣體(carrier gas)。又,於配管112也能夠安裝閥(valve)V1、未圖示的液體流量控制器等。
在氣化器120所生成的原料氣體係經由配管130而被向氣體供給部30之氣體擴散室32供給。於配管130係安裝有閥V2,能夠將氣體向氣體擴散室32的流入予以調節。藉由進一步地安裝未圖示的流量控制器,能夠控制向氣體擴散室32流入之氣體的流量。
在此,在被導入至氣體擴散室32的原料氣體被冷卻至未滿氣化溫度之情形下,存有被包含於該原料氣體的樹脂材料會堆積在氣體擴散室32之內壁及貫通孔313之內部的情形。為了防止此情形,成膜裝置100係進一步具有將簇射板31之第一面311予以加熱的加熱部40。
[加熱部]
在本實施形態中,加熱部40係具有:透明導電膜41,係形成於簇射板31的第一面311;以及配線42,係與透明導電膜41連接。加熱部40係構成為:能夠藉由透明導電膜41的電阻加熱來將氣體擴散室32及簇射板31加熱至上述樹脂材料之氣化溫度以上的適當溫度。配線42例如可以像圖1所示般與成膜裝置100之後述的控制部50連接,也可以與其他的電源裝置連接。
透明導電膜41係包含例如ITO(銦錫氧化物)。藉此,能夠一邊充分地確保能量線對於台15的穿透性,一邊將氣體擴散室32及簇射板31予以加熱。
圖2是將簇射板31及形成於簇射板31之透明導電膜41放大表示的概略剖視圖。圖3是將形成於簇射板31之透明導電膜41予以表示的概略俯視圖。
在本實施形態中,透明導電膜41係以覆蓋簇射板31之第一面311整體的方式所構成。為了也要在該構成確保原料氣體的供給,透明導電膜41係具有與複數個貫通孔313連通的複數個孔411。複數個孔411係與各貫通孔313對應地設置,且與對應的各貫通孔313具有大略相同的徑。
成膜裝置100係進一步具備控制部50。控制部50典型來說係由電腦(computer)所構成,將成膜裝置100之各部分予以控制。
[成膜方法]
接下來,對使用如以上般所構成之本實施形態的成膜裝置100之成膜方法進行說明。
[成膜步驟]
於成膜步驟係具有:包含紫外線硬化樹脂之原料氣體的供給步驟;以及紫外線樹脂層的硬化步驟。
在成膜步驟中,成膜室11係藉由真空排氣系統19而被調壓到預定的真空度,基板W係被配置於被冷卻至預定溫度以下的台15。氣體供給部30係藉由加熱部40而被加熱至紫外線硬化樹脂之氣化溫度以上的溫度。
在原料氣體的供給步驟中,在原料氣體生成部101所生成之包含紫外線硬化樹脂的原料氣體係經由配管130而向氣體供給部30導入。被導入到氣體供給部30之原料氣體係在氣體擴散室32中擴散,且經由簇射板31之複數個貫通孔313而被供給到台15上的基板W之整面。被供給到基板W之表面的原料氣體中的紫外線硬化樹脂係在被冷卻至該紫外線硬化樹脂的凝縮溫度以下之溫度的基板W之表面凝縮、堆積。
在紫外線硬化樹脂的硬化步驟中,原料氣體的供給停止,從光源單元20之照射源22向台15之基板W照射紫外線UV。由於氣體供給部30係由使紫外線穿透的材料所構成,故充分之量的紫外線UV係經由氣體供給部30而被照射至台15上的基板W。藉此,於基板W上形成有紫外線硬化樹脂之硬化物層。
硬化步驟完成後,基板W係從成膜室11被搬出,新的未成膜之基板W被搬入至成膜室。然後同樣地實施上述各步驟。藉此,能夠用一台成膜裝置在基板W上形成預定厚度的紫外線硬化樹脂層。
[本實施形態之作用功效]
在本實施形態中,原料氣體被向氣體擴散室32供給,氣體擴散室32之內部整體係藉由原料氣體而被維持在一定的壓力以上。假設在氣體供給部沒有簇射板且由複數個氣體噴出配管等所構成之情形下,在靠近原料氣體生成部101的部分與遠的端部之間會於原料氣體的流量及壓力產生差異。因此,在從氣體噴出配管所噴出之原料氣體的流量產生分布,變得難以將紫外線硬化樹脂層之面內的膜厚分布予以均勻化。
另一方面,在本實施形態中,能夠將氣體擴散室32之內部的原料氣體之壓力更加均勻化。藉此,在簇射板31之中央部的貫通孔313的原料氣體之流量與在周緣部的貫通孔313處的原料氣體之流量能夠維持成幾乎固定。因此,能夠將成膜於基板W上的樹脂層之膜厚分布予以均勻化,能夠提高成膜品質。
又,在本實施形態中,加熱部40係將簇射板31的第一面311予以加熱。藉此,能夠防止紫外線硬化樹脂層堆積在氣體擴散室32的內壁及貫通孔313。因此,因已堆積的樹脂層而起的紫外線穿透率之降低會被防止,得以長時間維持穩定的紫外線之穿透量。亦即,能夠長時間防止成膜效率降低,能夠提供生產性優異的成膜裝置100。
又,藉由以加熱部40來防止樹脂層堆積在氣體擴散室32及簇射板31,也能夠防止已堆積之樹脂層剝落而產生的粒子(particle)。藉此,能夠將成膜室11內維持在乾淨的狀態,且能夠使維護保養容易化。又,能夠藉由加熱部40防止已剝落的樹脂附著在成膜中的基板W上,能夠進一步地提升成膜品質。
進一步地,加熱部40係具有以覆蓋簇射板31之第一面311整體的方式所構成之透明導電膜41。藉此,能夠一邊維持簇射板31中的紫外線UV之穿透性一邊將簇射板31的面內更均勻地加熱。因此,能夠更有效地防止樹脂層堆積在氣體擴散室32的內壁及貫通孔313。
除此之外,由於加熱部40係與簇射板31一體地構成,故不需要針對加熱部40之單獨分開的維護保養。藉此,能夠使成膜裝置100的維護保養更加容易化。
又,透明導電膜41係具有與貫通孔313連通的孔411,藉此能夠一邊維持在貫通孔313中的原料氣體之供給功能一邊有效地將貫通孔313予以加熱。因此,能夠更確實地防止因已附著之樹脂所引起的貫通孔313之堵塞。
[其他實施形態]
簇射板31之構成並不限定於上述。
例如,如圖4的主要部位剖視圖所示,氣體供給部30也可以具有:複數個簇射板31;框部33,係支撐複數個簇射板31;以及氣體擴散室32。藉由將簇射板31分割,能夠縮小各簇射板31的尺寸,且能夠使氣體供給部30的製造成本降低。
又,雖然說明了氣體供給部30的氣體擴散室32係藉由簇射板31與腔室10之頂板12所形成,但並不限定於該構成。例如,如圖5的主要部位剖視圖所示,氣體供給部30也可以具有簇射頭(shower head)34,前述簇射頭34具備了簇射板31。簇射頭34係被配置於成膜室11的台15與頂板12之間,在內部形成有氣體擴散室32。又在簇射頭34中,簇射板31與頂板12側的面34a係由具有紫外線穿透性的材料所構成。在此種構成中,也能夠將基板W內的紫外線硬化樹脂層的膜厚分布予以均勻化。
簇射板31的貫通孔313及透明導電膜41的孔411並不限於如圖3所示的配置,例如也可以是圖6所示般的交錯配置(staggered arrangement)。或者也可以是其他的配置。
又,透明導電膜41並不限於將第一面311整體予以覆蓋的構成。例如,如圖7的概略俯視圖所示,透明導電膜41也可由帶狀的圖案(pattern)所形成。在該情形下,如圖7所示,透明導電膜41也可形成在鄰接的貫通孔313之間。又,透明導電膜41在以覆蓋貫通孔313的方式所構成之情形下,也可以在與貫通孔313對應之位置具有孔411。透明導電膜41並不限於帶狀的圖案,也可以由其他的任意圖案所形成。
又,加熱部40並不限於具有透明導電膜41之構成,例如,如圖8的主要部位剖視圖所示,也可以具有被配置在第一面311側的電阻加熱線43等的加熱器(heater)。電阻加熱線43能夠設成例如藉由印刷法所形成的印刷配線(printed wire)。
進一步地,加熱部40除了透明導電膜41以外,也可以具有將成膜室11之內壁或頂板12等予以加熱的加熱源。
以上,已對本發明的各實施形態進行說明,不過本發明並非僅限於上述的實施形態,在不脫離本發明之意旨的範圍內當然能夠施加各種變更。
在以上的實施形態中表示了能量線為紫外線的例子,但並不限於此。例如也能夠使用從13MHz、27MHz左右的高頻率電源所產生的電磁波。在該情形下,照射源係能夠設成振盪器(oscillator)等。又,也能夠將能量線設成電子束,將照射源設成電子束源。
進一步地,也能夠將以上的實施形態之成膜裝置作為例如具有複數個腔室之線內(inline)式或者是叢集(cluster)式的成膜裝置之一部分來使用。藉由使用此種裝置,具有發光元件般的複數個層之元件等的製造會變得更容易。又,藉由此種裝置,能夠實現低成本化、省空間化及生產性的進一步提升。
10:腔室
11:成膜室
12:頂板
13:開口部
15:台
19:真空排氣系統
20:光源單元
21:罩
22:照射源
23:光源室
30:氣體供給部
31:簇射板
32:氣體擴散室
33,122:框部
34:簇射頭
34a:面
40:加熱部
41:透明導電膜
42:配線
43:電阻加熱線
50:控制部
100:成膜裝置
101:原料氣體生成部
110:樹脂材料供給線路
111:槽
112,130:配管
120:氣化器
121:窗部
311:第一面
312:第二面
313:貫通孔
411:孔
UV:紫外線
V1,V2:閥
W:基板
[圖1]是表示本發明的一實施形態之成膜裝置的概略剖視圖。
[圖2]是將圖1所示的簇射板及透明導電膜放大表示的概略剖視圖。
[圖3]是表示上述透明導電膜的概略俯視圖。
[圖4]是表示本實施形態的比較例之成膜裝置的概略剖視圖。
[圖5]是本發明的又另一實施形態之成膜裝置的主要部位剖視圖。
[圖6]是本發明的又另一實施形態之成膜裝置的主要部位俯視圖。
[圖7]是本發明的又另一實施形態之成膜裝置的主要部位俯視圖。
[圖8]是本發明的又另一實施形態之成膜裝置的主要部位剖視圖。
10:腔室
11:成膜室
12:頂板
13:開口部
15:台
19:真空排氣系統
20:光源單元
21:罩
22:照射源
23:光源室
30:氣體供給部
31:簇射板
32:氣體擴散室
40:加熱部
41:透明導電膜
42:配線
50:控制部
100:成膜裝置
101:原料氣體生成部
110:樹脂材料供給線路
111:槽
112,130:配管
120:氣化器
121:窗部
122:框部
311:第一面
312:第二面
313:貫通孔
UV:紫外線
V1,V2:閥
W:基板
Claims (4)
- 一種成膜裝置,係具備:腔室,係具有成膜室;台,係被配置於前述成膜室,且將基板予以支撐;光源單元,係具有將能量線予以照射的照射源,且與前述成膜室對向地配置;氣體供給部,係將原料氣體從氣體擴散室供給到前述成膜室,且具有:簇射板,係使前述能量線穿透,且包含:第一面,係與前述光源單元對向;第二面,係與前述台對向;以及複數個貫通孔,係貫通前述第一面及前述第二面;以及前述氣體擴散室,係面對前述第一面且使前述原料氣體擴散,前述原料氣體係包含受到前述能量線的照射而硬化的能量線硬化樹脂;以及加熱部,係具有透明導電膜,前述透明導電膜係以覆蓋前述簇射板的前述第一面整體之方式形成且具有與複數個前述貫通孔連通之複數個孔,前述加熱部係藉由前述透明導電膜的電阻加熱將前述第一面加熱至前述能量線硬化樹脂的氣化溫度以上。
- 如請求項1所記載之成膜裝置,其中前述透明導電膜係包含銦錫氧化物。
- 如請求項1或2所記載之成膜裝置,其中前述簇射板係由石英玻璃所構成。
- 如請求項1或2所記載之成膜裝置,其中前述腔室係進一步具有: 開口部,係將前述成膜室朝向前述光源單元開放;以及頂板,係將前述開口部封塞且使前述能量線穿透;前述氣體擴散室係構成為被前述頂板與前述簇射板所包夾的空間。
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JPH05107526A (ja) * | 1991-10-15 | 1993-04-30 | Canon Inc | 透明パネルヒーターおよび透明パネルヒーターを設けた液晶表示装置 |
JP2013064187A (ja) * | 2011-09-20 | 2013-04-11 | Ulvac Japan Ltd | 成膜装置及び成膜方法 |
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JPS61273815A (ja) * | 1985-05-30 | 1986-12-04 | トヨタ自動車株式会社 | 有色透明導電膜の形成方法 |
US5667631A (en) * | 1996-06-28 | 1997-09-16 | Lam Research Corporation | Dry etching of transparent electrodes in a low pressure plasma reactor |
JP2007242291A (ja) * | 2006-03-06 | 2007-09-20 | Ichikoh Ind Ltd | 車両用灯具 |
US20080241377A1 (en) * | 2007-03-29 | 2008-10-02 | Tokyo Electron Limited | Vapor deposition system and method of operating |
JPWO2016204022A1 (ja) * | 2015-06-16 | 2018-01-25 | 株式会社アルバック | 成膜方法及び成膜装置 |
US11130286B2 (en) * | 2016-09-07 | 2021-09-28 | Canon Kabushiki Kaisha | Three-dimensional manufacturing apparatus, three-dimensional manufactured object producing method, and container for three-dimensional manufacturing apparatus |
JP6713087B2 (ja) * | 2017-02-21 | 2020-06-24 | 株式会社アルバック | 樹脂膜の形成方法および樹脂膜の成膜装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH05107526A (ja) * | 1991-10-15 | 1993-04-30 | Canon Inc | 透明パネルヒーターおよび透明パネルヒーターを設けた液晶表示装置 |
JP2013064187A (ja) * | 2011-09-20 | 2013-04-11 | Ulvac Japan Ltd | 成膜装置及び成膜方法 |
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US20210395880A1 (en) | 2021-12-23 |
JP6959454B2 (ja) | 2021-11-02 |
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KR20210060614A (ko) | 2021-05-26 |
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