TWI751526B - 深紫外線led模組構造 - Google Patents
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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Abstract
一種深紫外線LED模組構造,包含有一基座,內有一載板,其上設有一杯體;一透光材料層,其安裝於該杯體上端;一裸晶LED芯片,其安裝在該基座之杯體中,該裸晶LED芯片組設在一載板,並且裸晶LED芯片直接黏著於載板上或黏著在平面式基板後黏著於載板上,該載板更可連接在一驅動電路,該驅動電路用於驅動該裸晶LED芯片,並且將基座、載板、杯體及該透光材料層包覆成形;據此本發明能解決複雜的封裝結構成本、封裝基板低反射率、垂直基板與平面式透光材料層所造成大部分全反射、減少多次光路折射的損失。
Description
本發明涉及半導體技術領域及機構結合,特別係指一種以深紫外線(DUV)LED模組構造。
按,發光二極體(簡稱LED模組),是一種固體半導體的發光設備。隨著該項技術的發展,LED模組波段從原有的紅光、藍光等單色波長,逐漸往紫外光(UV)甚至DUV方向發展。
而深紫外線(DUV)LED(以下簡稱DUV LED)可運用在淨化與殺菌,特別是空氣、水、食品或醫療用品上。
如圖1所示,DUV LED封裝結構,其包含有一基板11、至少一DUV LED芯片12以及一石英玻璃13,採用黏著材料所構成之密封封裝。當前的封裝結構,特別是DUV LED封裝結構一般採用全無機材料封裝,石英玻璃13與基板11接著處須先進行金屬化處理,再使用高溫將石英玻璃13、黏著材料、基板11進行壓合黏著,來防止LED芯片遭受水氣及汙染,讓無機封裝製程良率及密封成本備受挑戰。封裝端進行改良後,使用不須石英玻璃13及矽膠、橡膠等有機材料壓合黏著封裝,雖大幅改善製程複雜度及良率,但有機材料經DUV LED照射後逐漸劣化,導致LED芯片保護功能喪失,尤其大功率DUV LED芯片更為加速。又如中國專利第
CN205960022U號一種紫外線LED器件及CN208904057U一種紫外線LED灯珠的封裝結構,將有機封裝結構改良降低有機材料被DUV照射老化問題。
請繼續參閱圖1,封裝材料選用及製程受到諸多限制,光線在DUV LED芯片12射出後進到杯體內,接著再經過石英玻璃13穿透到外界,基板的角度、反射率與石英玻璃的透光率對於光線取出效率造成很大影響。
DUV LED外部量子效率和電光轉換效率低於3%,如何改善習用封裝結構材料的缺失,提升DUV強度乃相關業者積極解決之課題。
本發明乃提供一種深紫外線LED模組構造,從封裝、光學折射方式、電路佈局、散熱結構、杯體的角度設計著手,重新定義設計DUV LED模組構造,讓DUV輻射強度提升,減少多次光路折射的損失,以及減緩基座受DUV照射劣化之一模組構造。
可達到上述目的之結構,包含有:一基座,該基座提供一載板設置,該基座內部設有一杯體,該杯體上端設置一透光材料層;其特徵在於:該基座內設有一裸晶之深紫外線LED芯片,前述的裸晶之深紫外線LED芯片進一步黏著在該載板上,並將該基座、該載板、該裸晶之深紫外線LED芯片包覆成型。
在本發明的實施例中,該載板與一驅動電路連接,該驅動電路用於控制該裸晶之深紫外線LED芯片。
在本發明的實施例中,該透光材料層與該杯體呈一預設角度,使得該裸晶之深紫外線LED芯片上的深紫外線LED發光時能產生多角度發散,或單一方向加強杯體反射率增加光的取出效率。
在本發明的實施例中,該載板係以陶瓷、鋁基板等高導熱材料結合無機材料及氟素材料應用,將載板達到高反射及抗DUV之照射。
在本發明的實施例中,該載板下端可組設一散熱片,前述的散熱片將熱量引導到外界環境,延長使用壽命。
在本發明的實施例中,該透光材料層為一平面型、薄膜型及角度型透光材料層。
在本發明的實施例中,該杯體為可調整角度的結構,藉由使用者需求,調整所需要的輻射強度。
[習知]
11:基板
12:DUV LED芯片
13:透光材料
[本發明]
2:基座
21:杯體
3:透光材料層
4:裸晶之深紫外線LED芯片
5:載板
6:驅動電路
7:密封墊片
8:散熱片
9:壓板
圖1係習用結構圖
圖2係本發明結構立體圖。
圖3係本發明結構剖面圖。
請參閱圖2、3,本發明之紫外線LED模組構造主要包含有:一基座2、一透光材料層3、一裸晶之深紫外線LED芯片4、一載板5所構成。
該基座2提供該載板5組設,該基座2,其上設有一杯體21,該基座2用於安裝在需要紫外線燈光的設備,例如:背景殺菌燈、RO逆滲透殺菌燈等等需要用於殺菌的場合,因此,較佳實施方式中該基座2設有用於
螺合的外螺紋部,但是該基座2的外型並不侷限於此,亦可為快拆式之卡榫構造或是固定螺絲緊迫構造,也可以直接在成品上設置,或者如圖2、3的筒型構造,都是本發明可以運用的方式。
請繼續參閱圖2、3該杯體21具有一特定角度,進一步的,該杯體21能依照需求調整角度,進而依照使用者需求調整輻射角度。
請參閱圖2、3,該透光材料層3安裝在該杯體21上端,該透光材料層3是平面型的透鏡或者薄膜型及角度型透光材料,可選用以氟系材料製造,或者以石英玻璃製造,前述氟系材料或者石英玻璃乃為抗紫外線光材料,進一步的,該透光材料層3具有不同光型角度,並且該透光材料層3與該基座2更利用一密封墊片7加以緊迫連接。
如圖3所示,該裸晶LED芯片4係安裝在載板5,該裸晶之深紫外線LED芯片4上裝設有深紫外線LED,透過該杯體21反射下,讓產生的深紫外線(DUV)能完全折射,減少光路損失,此外,該杯體21能將裸晶之深紫外線LED芯片產生的深紫外線(DUV)引導至外界。
如圖3所示,至少一驅動電路6與該載板5連接,該驅動電路6用於驅動裸晶LED芯片4的啟閉(此設計即是孰稱DUV LED驅動板DUV LED Driver on Board(DL-DOB),進一步的,更設有至少一密封墊片7設置在該基座2內部,防止水氣及汙染氣體進入造成光損失。
如圖3所示,該載板5係選用陶瓷基板、或者鋁基板、或者銅基板等高導熱無機材料或阻隔DUV照射基板之有機材料所製造或組成。
如圖3所示,在前述的結構中,該驅動電路6選用焊接的方式連接於於該載板5;此外,將散熱片8與裸晶LED芯片4直接組裝更能快速散
熱,防止元件受熱損壞,延長產品壽命。
如圖3所示,本發明的特點在於將前述的基座2、透光材料層3、裸晶之深紫外線LED芯片4、載板5、驅動電路6、密封墊片7、散熱片8將其組裝後包覆成型。
如圖3所示,該透光材料層3上端更可設置一具有特定反射角度的壓板9,讓透光材料層3穩定的結合。
透過上述結構,本發明可以獲得的優點在於:
1本發明採用裸晶LED芯片4係安裝在該載板5,減少無機或有機封裝成本。
2.本發明將包覆材料使用無機、抗DUV透光材料、高反射材料阻隔被DUV照射到的基座2,改善當前無機封裝或有機封裝直接照射到基座的問題。
3.本發明將DUV模組、機構、電路整合一體,使得整體結構模組化,提高安裝的便利性。
4.本發明提供一種從封裝、光學、電路與結構角度設計的DUV LED模組構造,能解決複雜的封裝結構成本、封裝基板低反射率、垂直基板與平面式透光材料層所造成大部分全反射、減少多次光路折射的損失。
5.該裸晶LED芯片4除了能安裝深紫外線LED外,也能依照需求安裝如白光LED、紅外線LED,可依照使用者需求提供多種類型的光源。
綜上所述,本發明構成結構均未曾見於諸書刊或公開使用,實符合發明專利申請要件,懇請 鈞局明鑑,早日准予專利,至為感禱。
2:基座
21:杯體
3:透光材料層
4:裸晶之深紫外線LED芯片
5:載板
6:驅動電路
7:密封墊片
8:散熱片
9:壓板
Claims (7)
- 一種深紫外線LED模組構造,包含有:一基座,該基座提供一載板設置,該基座內部設有一杯體,該杯體上端設置一透光材料層;其特徵在於:該基座內設有一裸晶之深紫外線LED芯片,前述的裸晶之深紫外線LED芯片進一步黏著在該載板上,並將該基座、該載板、該裸晶之深紫外線LED芯片包覆成型;該載板與一驅動電路連接,該驅動電路用於控制該裸晶之深紫外線LED芯片;該透光材料層與該杯體呈一預設角度,使得該裸晶之深紫外線LED芯片上的深紫外線LED發光時能產生多角度發散,或單一方向加強反射杯反射率增加光的取出效率。
- 依據請求項1所述的深紫外線LED模組構造,其中,該載板係以陶瓷、鋁基板等高導熱材料結合無機材料及氟素材料應用,將載板達到高反射及抗紫外線之照射。
- 依據請求項1所述的深紫外線LED模組構造,其中,該載板下端可組設一散熱片,前述的散熱片將熱量引導到外界環境。
- 依據請求項1所述的深紫外線LED模組構造,其中,該透光材料層可選擇使用平面型透光材料、或者薄膜型透光材料、或者角度型透光材料。
- 依據請求項1所述的深紫外線LED模組構造,其中,該杯體為可調整角度的結構,藉由使用者需求,調整所需要的輻射強度。
- 依據請求項1所述的深紫外線LED模組構造,其中,該透光材料層上端更可設置一具有特定反射角度的壓板,使得該透光材料層穩定的結合。
- 依據請求項1所述的深紫外線LED模組構造,其中,該裸晶之深紫外線LED芯片更可安裝白光LED、或者紅外線LED,或者上述兩種光源整合在該裸晶之深紫外線LED芯片。
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CN102386155A (zh) * | 2010-08-27 | 2012-03-21 | 台湾积体电路制造股份有限公司 | 半导体装置及形成发光二极管元件的方法 |
US20160155907A1 (en) * | 2014-11-28 | 2016-06-02 | Lg Innotek Co., Ltd. | Light emitting device package |
US20170175957A1 (en) * | 2015-12-21 | 2017-06-22 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and illuminating apparatus |
TWM603621U (zh) * | 2020-04-09 | 2020-11-01 | 晟美光電有限公司 | 深紫外線led模組構造 |
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TW202139488A (zh) | 2021-10-16 |
US11658271B2 (en) | 2023-05-23 |
US20210320230A1 (en) | 2021-10-14 |
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