TWI751444B - 靜電吸盤 - Google Patents
靜電吸盤 Download PDFInfo
- Publication number
- TWI751444B TWI751444B TW108136824A TW108136824A TWI751444B TW I751444 B TWI751444 B TW I751444B TW 108136824 A TW108136824 A TW 108136824A TW 108136824 A TW108136824 A TW 108136824A TW I751444 B TWI751444 B TW I751444B
- Authority
- TW
- Taiwan
- Prior art keywords
- porous
- hole
- porous portion
- electrostatic chuck
- dielectric substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 262
- 239000000919 ceramic Substances 0.000 claims abstract description 260
- 239000002245 particle Substances 0.000 claims description 63
- 239000011148 porous material Substances 0.000 claims description 57
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 16
- 238000010891 electric arc Methods 0.000 abstract description 76
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 92
- 239000000463 material Substances 0.000 description 28
- 239000000853 adhesive Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 21
- 230000001070 adhesive effect Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 14
- 238000005245 sintering Methods 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 230000001186 cumulative effect Effects 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 239000000395 magnesium oxide Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000007751 thermal spraying Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- -1 Al 6 O 13 Si 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910006501 ZrSiO Inorganic materials 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Mechanical Engineering (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-203749 | 2018-10-30 | ||
| JP2018203749 | 2018-10-30 | ||
| JP2019166033A JP7002014B2 (ja) | 2018-10-30 | 2019-09-12 | 静電チャック |
| JP2019-166033 | 2019-09-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202017095A TW202017095A (zh) | 2020-05-01 |
| TWI751444B true TWI751444B (zh) | 2022-01-01 |
Family
ID=70549670
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108136824A TWI751444B (zh) | 2018-10-30 | 2019-10-14 | 靜電吸盤 |
| TW110145168A TWI806270B (zh) | 2018-10-30 | 2019-10-14 | 靜電吸盤 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110145168A TWI806270B (zh) | 2018-10-30 | 2019-10-14 | 靜電吸盤 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11309204B2 (enExample) |
| JP (2) | JP7002014B2 (enExample) |
| KR (2) | KR102750908B1 (enExample) |
| CN (1) | CN118737928A (enExample) |
| TW (2) | TWI751444B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111668150B (zh) * | 2019-03-05 | 2024-06-28 | Toto株式会社 | 静电吸盘及处理装置 |
| JP7433857B2 (ja) * | 2019-11-25 | 2024-02-20 | 京セラ株式会社 | 試料保持具 |
| JP7515583B2 (ja) * | 2020-05-28 | 2024-07-12 | 京セラ株式会社 | 通気性プラグ、基板支持アセンブリおよびシャワープレート |
| JP7330139B2 (ja) * | 2020-06-18 | 2023-08-21 | 日立造船株式会社 | 加圧用吸着台およびこれを具備する加圧装置 |
| JP7382978B2 (ja) * | 2021-02-04 | 2023-11-17 | 日本碍子株式会社 | 半導体製造装置用部材及びプラグ |
| JP7558886B2 (ja) * | 2021-05-17 | 2024-10-01 | 日本特殊陶業株式会社 | 保持装置 |
| CN115732387A (zh) | 2021-08-31 | 2023-03-03 | Toto株式会社 | 静电吸盘以及处理装置 |
| US12341048B2 (en) * | 2021-11-29 | 2025-06-24 | Applied Materials, Inc. | Porous plug for electrostatic chuck gas delivery |
| JP7620578B2 (ja) * | 2022-01-07 | 2025-01-23 | 日本碍子株式会社 | 半導体製造装置用部材 |
| JP7791723B2 (ja) * | 2022-01-20 | 2025-12-24 | 新光電気工業株式会社 | 基板固定装置 |
| JP7569343B2 (ja) * | 2022-01-21 | 2024-10-17 | 日本碍子株式会社 | 半導体製造装置用部材 |
| JP7569342B2 (ja) * | 2022-01-21 | 2024-10-17 | 日本碍子株式会社 | 半導体製造装置用部材 |
| US11794296B2 (en) * | 2022-02-03 | 2023-10-24 | Applied Materials, Inc. | Electrostatic chuck with porous plug |
| CN115632029B (zh) * | 2022-12-22 | 2023-03-17 | 河北博特半导体设备科技有限公司 | 一种高精度晶圆承片台的陶瓷旋转台结构 |
| JP7551828B1 (ja) | 2023-04-21 | 2024-09-17 | 日本特殊陶業株式会社 | 保持装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI518841B (zh) * | 2013-03-29 | 2016-01-21 | Toto Ltd | Electrostatic sucker |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW561515B (en) * | 2001-11-30 | 2003-11-11 | Tokyo Electron Ltd | Processing device, and gas discharge suppressing member |
| KR100505035B1 (ko) * | 2003-11-17 | 2005-07-29 | 삼성전자주식회사 | 기판을 지지하기 위한 정전척 |
| JP4390629B2 (ja) | 2004-06-01 | 2009-12-24 | Ｎｅｃエレクトロニクス株式会社 | 静電吸着装置およびプラズマ処理装置 |
| JP4557814B2 (ja) | 2005-06-09 | 2010-10-06 | パナソニック株式会社 | プラズマ処理装置 |
| JP5188696B2 (ja) * | 2006-11-01 | 2013-04-24 | 株式会社日立ハイテクノロジーズ | ウエハ載置用電極 |
| US20090086401A1 (en) | 2007-09-28 | 2009-04-02 | Intevac, Inc. | Electrostatic chuck apparatus |
| JP5331519B2 (ja) * | 2008-03-11 | 2013-10-30 | 日本碍子株式会社 | 静電チャック |
| US8336891B2 (en) * | 2008-03-11 | 2012-12-25 | Ngk Insulators, Ltd. | Electrostatic chuck |
| JP5449750B2 (ja) | 2008-11-19 | 2014-03-19 | 株式会社日本セラテック | 静電チャックおよびその製造方法 |
| JP5198226B2 (ja) * | 2008-11-20 | 2013-05-15 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
| JP6005579B2 (ja) * | 2012-04-27 | 2016-10-12 | 日本碍子株式会社 | 半導体製造装置用部材 |
| JP6432474B2 (ja) * | 2014-03-27 | 2018-12-05 | Toto株式会社 | 静電チャック |
| US9805963B2 (en) * | 2015-10-05 | 2017-10-31 | Lam Research Corporation | Electrostatic chuck with thermal choke |
| JP6634315B2 (ja) | 2016-03-03 | 2020-01-22 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
| US10770270B2 (en) * | 2016-06-07 | 2020-09-08 | Applied Materials, Inc. | High power electrostatic chuck with aperture-reducing plug in a gas hole |
| JP6722518B2 (ja) * | 2016-06-09 | 2020-07-15 | 新光電気工業株式会社 | 焼結体及びその製造方法と静電チャック |
| JP6865145B2 (ja) * | 2016-12-16 | 2021-04-28 | 日本特殊陶業株式会社 | 保持装置 |
| JP6489277B1 (ja) * | 2018-03-14 | 2019-03-27 | Toto株式会社 | 静電チャック |
-
2019
- 2019-09-12 JP JP2019166033A patent/JP7002014B2/ja active Active
- 2019-09-19 US US16/576,220 patent/US11309204B2/en active Active
- 2019-09-24 KR KR1020190117683A patent/KR102750908B1/ko active Active
- 2019-10-14 TW TW108136824A patent/TWI751444B/zh active
- 2019-10-14 TW TW110145168A patent/TWI806270B/zh active
- 2019-10-15 CN CN202410835027.6A patent/CN118737928A/zh active Pending
-
2021
- 2021-12-09 JP JP2021200298A patent/JP7424362B2/ja active Active
-
2022
- 2022-03-09 US US17/690,337 patent/US12014947B2/en active Active
-
2024
- 2024-12-30 KR KR1020240199674A patent/KR102819118B1/ko active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI518841B (zh) * | 2013-03-29 | 2016-01-21 | Toto Ltd | Electrostatic sucker |
Also Published As
| Publication number | Publication date |
|---|---|
| US11309204B2 (en) | 2022-04-19 |
| KR102750908B1 (ko) | 2025-01-09 |
| JP7002014B2 (ja) | 2022-01-20 |
| JP2020072261A (ja) | 2020-05-07 |
| US20200135528A1 (en) | 2020-04-30 |
| KR102819118B1 (ko) | 2025-06-12 |
| KR20200049511A (ko) | 2020-05-08 |
| TW202213613A (zh) | 2022-04-01 |
| US20220199452A1 (en) | 2022-06-23 |
| TW202017095A (zh) | 2020-05-01 |
| US12014947B2 (en) | 2024-06-18 |
| TWI806270B (zh) | 2023-06-21 |
| KR20250007482A (ko) | 2025-01-14 |
| JP7424362B2 (ja) | 2024-01-30 |
| CN118737928A (zh) | 2024-10-01 |
| JP2022031333A (ja) | 2022-02-18 |
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