TWI750948B - 襯底支撐構件及其應用方法 - Google Patents

襯底支撐構件及其應用方法 Download PDF

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TWI750948B
TWI750948B TW109143592A TW109143592A TWI750948B TW I750948 B TWI750948 B TW I750948B TW 109143592 A TW109143592 A TW 109143592A TW 109143592 A TW109143592 A TW 109143592A TW I750948 B TWI750948 B TW I750948B
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奕寬 林
阿瑟 佐默施泰因
汗 沃
凱文 巴貝拉
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美商先進尼克斯有限公司
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Abstract

一種將凸起構件應用於半導體襯底卡盤的方法，在使用時，每個構件用於將襯底與所述卡盤間隔開，所述方法包括以下步驟：i)提供一種元件，所述元件具有載體層、黏附於所述載體層的構件以及黏附於所述載體層的剝離層，使得所述構件被圍在所述載體層與所述剝離層之間；ii)去除所述剝離層；以及iii)將所述構件黏附於卡盤。

Description

襯底支撐構件及其應用方法
本發明涉及一種將凸起構件應用於半導體襯底卡盤的元件、一種將凸起襯底支撐構件的圖案應用於卡盤表面的方法、以及一種製造這種元件的方法。
本發明屬於半導體加工領域，其中，襯底由卡盤支撐。在材料加工過程中，卡盤可以使用靜電卡持(ESC)或通過真空夾持夾緊被支撐的襯底。被支撐的襯底可以例如是半導體晶片、重新分配晶片、或包含嵌入聚合物材料的模具的面板、或其它包含電子電路的襯底。本發明的材料加工應用可以包括真空或次大氣壓技術，例如物理氣相沉積(PVD)、化學氣相沉積(CVD)、離子注入，以及通過反應離子蝕刻或物理濺射蝕刻進行的材料去除。材料加工應用還可包括大氣處理，例如熱退火或其他熱處理、化學機械拋光等。
在加工期間，通常需要冷卻或加熱半導體襯底，往往通過向襯底的背側提供氣體來完成。襯底加熱或冷卻的均勻性是影響加工均勻性的一個重要參數。對於背側有氣體供應的卡盤來說，襯底的熱均勻性取決於卡盤與襯底之間氣壓的均勻性。
圖1A和圖1B為現有技術卡盤100的示例，該卡盤100具有可以在其上安裝襯底118的卡盤面111。卡盤具有冷卻體110，該冷卻體110包括具有流體入口115和流體出口117的冷卻流體歧管116。氣體通過氣體入口113供應給氣 體歧管114，並分配到孔112，以向卡盤面111和襯底118之間的區域供應氣體。通過使用加工於卡盤面111中的徑向和方位通道119，可實現均勻的氣體分佈。
圖2A和圖2B為現有技術卡盤101的另一個示例，其中適當地保留了相同部件的附圖標記。氣體通過氣體入口113供應給氣體歧管114，並分佈到一個或多個孔112。位於卡盤面111上的凸起壓花構件120的圖案朝襯底118突出，從而允許氣體均勻分佈於襯底118的背側上的區域中，即襯底最靠近卡盤面111的一側。可以對卡盤面111進行機加工(例如通過銑削或通過掩模噴砂處理)以提供凸起壓花構件120。替代地，該構件120可以通過物理氣相沉積(PVD)或化學氣相沉積(CVD)沉積於卡盤面111上。替代地，可以將包含凸起壓花構件的陶瓷或金屬材質的薄覆蓋層膠著鍵合於卡盤面111。卡盤面111可以使用靜電或真空卡持將襯底118夾持於其上。在這種現有技術卡盤中，壓花永久性集成於卡盤面111中。
半導體卡盤表面需要定期維護。可能需要清除卡盤表面的金屬、聚合物或其它技術相關的污染物。在清潔期間可能會損壞卡盤壓花構件120。在加工過程中，由於與晶片或其它襯底反復接觸，這些構件可能也會被磨損。因此，需要定期更換半導體卡盤上的凸起壓花構件。
出於對成本和便利性的考慮，通常在晶片製造設施處或其附近進行半導體卡盤的維護。並且，需要在現場使用低成本的材料、工裝及設備來替換壓花構件。
本發明的目的是提供一種元件，使卡盤壓花構件易於更換而無需昂貴的工廠翻新。本發明的另一個目的是提供一種將元件應用於卡盤表面，從而將支撐構件的圖案沉積並鍵合到該表面上的方法。
根據本發明，這些目的是通過形成構件並將其黏附於剝離層來實現的，即一種在應用時提供保護並減少污染，但卻可以通過剝離去除的層，隨後可以去除該剝離層以保留卡盤上的構件。
根據本發明的第一態樣，提供了一種用於將凸起的構件應用於半導體襯底卡盤的元件，在使用時，每個構件用於將襯底與所述卡盤間隔開，所述元件包括：具有第一主側和第二主側的載體層；黏附於所述載體層的所述第一主側的至少一個構件；以及黏附於所述載體層的所述第一主側的剝離層，使得所述至少一個構件被圍在所述載體層和所述剝離層之間，其中，通過去除所述剝離層並隨後將所述構件黏附於所述卡盤，能夠將所述構件應用於所述卡盤。
根據本發明的第二態樣，提供了一種將凸起構件應用於半導體襯底卡盤的方法，在使用時，每個構件用於將襯底與所述卡盤間隔開，所述方法包括以下步驟：i)提供根據第一態樣所述的元件；ii)去除剝離層；以及iii)將所述構件黏附於所述卡盤。
根據本發明的第三態樣，提供了一種製造第一態樣所述的元件的方法，包括以下步驟：將剝離層、黏合劑層和聚合物壓花層結合在一起形成多層結構；去除所述壓花層和所述黏合劑層的一部分以產生至少一個鍵合於所述剝離層的構件；以及將所述載體層黏附於所述剝離層以在其間包圍所述至少一個構件。
本發明的其他具體態樣和特徵在所附申請專利範圍中得以陳述。
100,101,230:卡盤
110:冷卻體
111:卡盤面
112:孔
113:氣體入口
114:氣體歧管
115:流體入口
116:冷卻流體歧管
117:流體出口
118:襯底
119:通道
120:壓花構件
200:組件
210:剝離支撐聚合物層
211:黏合劑層
212:壓花層
213:支撐構件
214:黏合背襯
215:載體層
216:定位孔
217:凸邊
218:定位銷
219:加熱工裝
220:凸環
231:卡盤面
圖1A和圖1B分別示出了背側氣體通過通道分配的現有技術卡盤的示意性平面圖和剖視圖。
圖2A和圖2B分別示出了背側氣體通過集成的壓花構件分配的現有技術卡盤的示意性平面圖和剖視圖。
圖3A至圖3D示出了根據本發明實施例的在初始和中間製造步驟中展示的用於將支撐構件沉積在卡盤上的組件的示意性剖視圖。
圖4A和圖4B分別示出了中間製造步驟中用於將支撐構件沉積在卡盤上的元件的部分示意性剖視圖和平面圖。
圖5A和圖5B分別示出了在製造後將構件沉積在卡盤上的組件的示意性平面圖和剖視圖。
圖6示出了卡盤、用於將支撐構件沉積在卡盤上的施加器元件以及製造工裝的示意性剖視圖。
圖7示出了一種具有沉積構件的卡盤的示意性剖視圖，沉積構件用於支撐襯底。
圖3A以截面示意性地示出了用於在初始製造步驟中將支撐構件沉積於卡盤的初始結構。在該製造步驟中示出了三個鍵合層，即壓花層212，其通過黏合劑層211(本實施例中為壓敏黏合劑層)鍵合於表面光滑的剝離支撐聚合物層210(以下稱為“剝離層210”)。
壓花層212可以由諸如聚醚醚酮(PEEK)或聚醯亞胺的聚合物材料構成，其厚度在5-100μm的範圍內，較佳為10-30μm之間。剝離層210可以包括 織物、尼龍或其它合成聚合物材料。剝離層210的厚度可以在0.1-1.0mm的範圍內。黏合劑層211可以構成為黏合墊材料，該黏合墊材料可以由多種聚合物製成，包括例如丙烯酸酯、聚氨酯和矽酮，其鍵合強度應大於10lb/inch(1750N/m)，並且應在高於150℃的溫度下流動。
圖3B以放大剖視圖示意性地示出了第二製造步驟中的元件，該步驟是在鐳射切割壓花層212和黏合劑層211以去除其部分從而留下多個小型支撐構件213之後進行的。從上方(即朝向剝離層210)觀察時，這些支撐構件213例如可以呈矩形、圓形或其它形狀。支撐構件213的寬度和長度(平行於剝離層210的維度)或直徑在0.25-3mm之間。
圖3C和圖3D分別以平面圖和放大剖視圖示意性地示出了第二製造步驟中元件的更多細節。控制對壓花層212和黏合劑層211的鐳射切割，以形成圍繞剝離層210周邊的呈凸邊217形式的構件。當應用于卡盤時，凸邊217定義為圍繞所有諸如支撐構件213的所有其它構件的連續邊界。另外，控制鐳射切割以形成呈多個凸環220形式的其它構件，當應用于卡盤時，每個凸環220定義為不圍繞其它構件的閉合形狀。凸邊217和凸環220均從剝離層210向外突出。凸邊217和凸環220的寬度可以在0.5-5.0mm的範圍內，可以較佳小於3mm。對於圓形襯底來說，凸邊217的外直徑應與襯底118的直徑相匹配。而對於其它形狀的襯底，凸邊217的外邊緣應與襯底118的邊緣重合。凸環220用於隔離卡盤上的孔(例如112，見圖1A-圖1B和圖2A-圖2B)，以防止氣體洩漏。
圖4A和圖4B分別以放大剖視圖和放大平面圖示意性地示出了用於在第三製造步驟中將支撐構件213沉積於卡盤上的組件。將具有直接黏附於載體層215的下表面上的黏合背襯214的載體層215對準並放置在圖3A-圖3D所示的元件的上表面上。用足夠的壓力將剝離層210和載體層215擠壓在一起，以將支 撐構件213牢固地裝於並黏附於載體層215。載體層215由聚合物製成，例如織物、尼龍或其它合成材料。載體層215的厚度可以在0.1-1.0mm之間。
圖5A和圖5B分別以平面圖和剖視圖示意性地示出了施加器組件200，在最終的製造步驟中，在載體層215中鐳射切割多個定位孔216，之後，該施加器元件200用於在其製造完成時將構件沉積到卡盤上。例如，已經通過在剝離層和載體層之間插入小型工具手動去除剝離層210。剝離層210的光滑表面有助於其去除。另外，選擇黏合背襯214和黏合劑層211，使得在室溫下，載體層215和壓花層212之間的黏合力超過剝離層210和壓花層212之間的黏合力。應該注意的是，與圖4A不同，圖5B中的載體層215是光滑的。這種差異僅僅是由於兩圖之間的比例不同。
圖6以剖視圖示意性地示出了卡盤230、用於將凸起構件沉積於卡盤230的組件200以及定位銷218，該定位銷218已插入組件200的定位孔216中並且與定位孔216銜接以適當地相對於卡盤230定位組件。先前已經清除了卡盤230的所有凸起構件，例如，先前使用類似元件所黏附的凸起構件。使用加熱工裝219將元件200壓在卡盤230上以啟用黏合劑層211，從而將凸起支撐構件213、凸環220以及凸邊217鍵合於卡盤230。本領域技術人員能夠理解的是，還可以使用其它方法施加壓力和熱量，以便將元件200膠著鍵合於卡盤230。然後冷卻卡盤，冷卻後，可以通過機械剝離去除載體層215，同時，保留鍵合於卡盤230的凸起構件213。
圖7以剖視圖示意性地示出了一種用元件200加工後並準備用於半導體技術中的卡盤230。部件113、115、116、117均可如前參考圖1B和圖2B所述。凸起支撐構件213、凸環220及凸邊217均與襯底118相接觸。由孔112供應的氣體均勻地分佈於卡盤面231和襯底118的背側之間。通過由凸邊217提供的與基板118的密封保持背面氣體壓力。
上述實施例僅是示例性的，並且本發明範圍內的其他可能性和替代方案對於本領域技術人員將是顯而易見的。
210:剝離支撐聚合物層
211:黏合劑層
212:壓花層
214:黏合背襯
215:載體層

Claims (17)

  1. 一種用於將凸起構件應用於半導體襯底卡盤之元件，在使用時，每個構件用於將襯底與所述卡盤間隔開，所述元件包括：具有第一主側和第二主側的載體層；黏附於所述載體層的所述第一主側的至少一個構件；以及黏附於所述載體層的所述第一主側的剝離層，使得所述至少一個構件被圍在所述載體層和所述剝離層之間，其中，通過去除所述剝離層並隨後將所述構件黏附於卡盤，能夠將所述構件應用於所述卡盤。
  2. 如申請專利範圍第1項所述之元件，更包括位於所述構件和所述剝離層之間的黏合劑層，用於隨後將所述構件黏附於所述卡盤。
  3. 如申請專利範圍第2項所述之元件，其中，所述黏合劑層包括聚合物，可選為丙烯酸酯、聚氨酯以及矽酮中的一種。
  4. 如申請專利範圍第1項所述之元件，更包括直接黏附於所述載體層的所述第一主側的黏合背襯。
  5. 如申請專利範圍第1項所述之元件，更包括多個構件，並且其中至少一個構件包括邊緣，在應用於所述卡盤時，所述邊緣定義為圍繞剩餘多個所述構件的連續邊界。
  6. 如申請專利範圍第1項所述之元件，更包括多個構件，並且其中至少一個構件包括環，在應用於所述卡盤時，所述環定義為不圍繞其它構件的閉合形狀。
  7. 如申請專利範圍第6項所述之元件，更包括位於所述載體層中的靠近所述環的孔，以在使用時將所述元件與所述卡盤對準。
  8. 如申請專利範圍第7項所述之元件，更包括穿過所述孔以在使用時與所述卡盤接合的定位銷。
  9. 如申請專利範圍第1項所述之元件，其中，所述剝離層包括織物或合成聚合物材料中的一種。
  10. 如申請專利範圍第1項所述之元件，其中，所述至少一個構件包括聚合物材料，可選為聚醚醚酮或聚醯亞胺。
  11. 一種將凸起構件應用於半導體襯底卡盤之方法，在使用時，每個構件用於將襯底與所述卡盤間隔開，所述方法包括以下步驟：i)提供如申請專利範圍第1項所述的元件；ii)去除剝離層；以及iii)將所述構件黏附於所述卡盤。
  12. 如申請專利範圍第11項所述之方法，其中，步驟iii)包括：在將所述構件黏附於所述卡盤之前將所述元件與所述卡盤對準。
  13. 如申請專利範圍第11項所述之方法，其中，至少兩個定位銷穿過所述元件並插入所述卡盤中，以將所述元件與所述卡盤對準。
  14. 如申請專利範圍第11項所述之方法，其中，在步驟iii)中，所述將所述構件黏附於所述卡盤包括：向所述卡盤和所述元件施加熱量和壓力。
  15. 如申請專利範圍第11項所述之方法，更包括以下步驟：(iv)在步驟iii)之後冷卻所述卡盤。
  16. 如申請專利範圍第11項所述之方法，更包括最後將所述載體層從所述元件移除的步驟。
  17. 一種製造如申請專利範圍第1項所述的元件之方法，包括以下步驟：將剝離層、黏合劑層和聚合物壓花層鍵合在一起形成多層結構； 去除所述壓花層和所述黏合劑層的一部分以產生至少一個鍵合於所述剝離層的構件；將載體層黏附於所述剝離層上以在其間包圍所述至少一個構件。
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