TWI750469B - 靶材及製造靶材之方法 - Google Patents
靶材及製造靶材之方法 Download PDFInfo
- Publication number
- TWI750469B TWI750469B TW108113201A TW108113201A TWI750469B TW I750469 B TWI750469 B TW I750469B TW 108113201 A TW108113201 A TW 108113201A TW 108113201 A TW108113201 A TW 108113201A TW I750469 B TWI750469 B TW I750469B
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- Prior art keywords
- diboride
- tib
- vanadium
- target
- titanium
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 21
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 71
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910033181 TiB2 Inorganic materials 0.000 claims abstract description 61
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 37
- 239000010936 titanium Substances 0.000 claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 230000000704 physical effect Effects 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 27
- 238000002490 spark plasma sintering Methods 0.000 claims description 17
- 238000007731 hot pressing Methods 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 238000005259 measurement Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005240 physical vapour deposition Methods 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 238000002441 X-ray diffraction Methods 0.000 claims description 6
- LAROCDZIZGIQGR-UHFFFAOYSA-N boron;vanadium Chemical compound B#[V]#B LAROCDZIZGIQGR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- GFNGCDBZVSLSFT-UHFFFAOYSA-N titanium vanadium Chemical compound [Ti].[V] GFNGCDBZVSLSFT-UHFFFAOYSA-N 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 150000001639 boron compounds Chemical class 0.000 claims 1
- 229910052729 chemical element Inorganic materials 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 238000002156 mixing Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 238000007373 indentation Methods 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000012769 display material Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000000541 cathodic arc deposition Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000006115 industrial coating Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Images
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/5805—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides
- C04B35/58064—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides based on refractory borides
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/5805—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides
- C04B35/58064—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides based on refractory borides
- C04B35/58071—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides based on refractory borides based on titanium borides
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- H01J37/3426—Material
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3804—Borides
- C04B2235/3813—Refractory metal borides
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/425—Graphite
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/666—Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
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- C04B2235/74—Physical characteristics
- C04B2235/77—Density
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- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM50075/2018 | 2018-04-20 | ||
| ATGM50075/2018U AT16481U1 (de) | 2018-04-20 | 2018-04-20 | Target und Verfahren zur Herstellung eines Targets |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201943866A TW201943866A (zh) | 2019-11-16 |
| TWI750469B true TWI750469B (zh) | 2021-12-21 |
Family
ID=68159857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108113201A TWI750469B (zh) | 2018-04-20 | 2019-04-16 | 靶材及製造靶材之方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3781538B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JP7425741B2 (cg-RX-API-DMAC10.html) |
| CN (1) | CN112236403B (cg-RX-API-DMAC10.html) |
| AT (1) | AT16481U1 (cg-RX-API-DMAC10.html) |
| TW (1) | TWI750469B (cg-RX-API-DMAC10.html) |
| WO (1) | WO2019201796A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115057709B (zh) * | 2022-06-21 | 2023-07-18 | 山东大学 | 一种高熵过渡金属二硼化物及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4259119A (en) * | 1979-03-27 | 1981-03-31 | Director-General Of The Agency Of Industrial Science And Technology | Boride-based refractory materials |
| US4546089A (en) * | 1982-12-30 | 1985-10-08 | Corning Glass Works | Group 4b boride and VB2 /YB2 |
| CN102869807A (zh) * | 2010-05-04 | 2013-01-09 | 攀时欧洲公司 | 二硼化钛靶子 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3512986A1 (de) * | 1985-04-11 | 1986-10-16 | Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe | Viellagige, hochverschleissfeste hartstoffschutzschicht fuer metallische, stark beanspruchte oberflaechen oder substrate |
| JPH05294739A (ja) * | 1992-04-13 | 1993-11-09 | Central Glass Co Ltd | 二ホウ化チタン系焼結体およびその製造法 |
| JPH09202966A (ja) * | 1996-01-23 | 1997-08-05 | Nippon Seimitsu Kk | 薄膜形成方法 |
| DE10005612A1 (de) * | 2000-02-09 | 2001-08-16 | Hauzer Techno Coating Europ B | Verfahren zur Herstellung eines Gegenstandes und Gegenstand |
| CN1680215A (zh) * | 2005-01-14 | 2005-10-12 | 李根法 | 生产结构陶瓷的共晶复合粉末烧结助剂及其制备方法 |
| US7857948B2 (en) * | 2006-07-19 | 2010-12-28 | Oerlikon Trading Ag, Trubbach | Method for manufacturing poorly conductive layers |
| JP2008179853A (ja) | 2007-01-24 | 2008-08-07 | Hitachi Tool Engineering Ltd | ホウ化物含有ターゲット材 |
| US8821701B2 (en) * | 2010-06-02 | 2014-09-02 | Clifton Higdon | Ion beam sputter target and method of manufacture |
| CN106756849B (zh) * | 2016-12-21 | 2019-06-25 | 深圳先进技术研究院 | 一种具有过渡金属硼化物涂层的pcb用微钻及其制备方法 |
| CN108251803B (zh) * | 2016-12-29 | 2020-06-02 | 深圳先进技术研究院 | TiB2自润滑涂层及其制备方法和耐磨构件 |
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2018
- 2018-04-20 AT ATGM50075/2018U patent/AT16481U1/de not_active IP Right Cessation
-
2019
- 2019-04-12 EP EP19717489.9A patent/EP3781538B1/de active Active
- 2019-04-12 WO PCT/EP2019/059517 patent/WO2019201796A1/de not_active Ceased
- 2019-04-12 CN CN201980026614.8A patent/CN112236403B/zh active Active
- 2019-04-12 JP JP2020555911A patent/JP7425741B2/ja active Active
- 2019-04-16 TW TW108113201A patent/TWI750469B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4259119A (en) * | 1979-03-27 | 1981-03-31 | Director-General Of The Agency Of Industrial Science And Technology | Boride-based refractory materials |
| US4546089A (en) * | 1982-12-30 | 1985-10-08 | Corning Glass Works | Group 4b boride and VB2 /YB2 |
| CN102869807A (zh) * | 2010-05-04 | 2013-01-09 | 攀时欧洲公司 | 二硼化钛靶子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2021521335A (ja) | 2021-08-26 |
| JP7425741B2 (ja) | 2024-01-31 |
| EP3781538B1 (de) | 2024-09-04 |
| EP3781538C0 (de) | 2024-09-04 |
| WO2019201796A1 (de) | 2019-10-24 |
| CN112236403A (zh) | 2021-01-15 |
| TW201943866A (zh) | 2019-11-16 |
| EP3781538A1 (de) | 2021-02-24 |
| AT16481U1 (de) | 2019-10-15 |
| CN112236403B (zh) | 2023-04-14 |
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